JP5277163B2 - 複数の部分を有する窓をもつ研磨パッド - Google Patents
複数の部分を有する窓をもつ研磨パッド Download PDFInfo
- Publication number
- JP5277163B2 JP5277163B2 JP2009518606A JP2009518606A JP5277163B2 JP 5277163 B2 JP5277163 B2 JP 5277163B2 JP 2009518606 A JP2009518606 A JP 2009518606A JP 2009518606 A JP2009518606 A JP 2009518606A JP 5277163 B2 JP5277163 B2 JP 5277163B2
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- Japan
- Prior art keywords
- polishing
- layer
- polishing pad
- light transmissive
- outer portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 128
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000012705 liquid precursor Substances 0.000 claims description 3
- 230000005499 meniscus Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000009499 grossing Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 17
- 238000012544 monitoring process Methods 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000006748 scratching Methods 0.000 description 4
- 230000002393 scratching effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006193 liquid solution Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
Claims (14)
- 貫通アパーチャーを有し且つ研磨面を有する不透明な研磨層と、
上記アパーチャーにおける固体の光透過窓と、を備え、
上記固体の光透過窓は、
上記研磨層に固定された外側部分であって、上記研磨面に対してくぼんだ上面を有する外側部分、及び
上記外側部分に固定された内側部分であって、上記研磨面と実質的に同一平面である上面を有する内側部分、を含むものであり、
上記外側部分は、上記内側部分よりも硬い、研磨パッド。 - 上記外側部分が上記内側部分を取り巻く、請求項1に記載の研磨パッド。
- 上記内側部分及び上記研磨層は、実質的に同じ硬度を有する、請求項1に記載の研磨パッド。
- 上記外側部分は、上記研磨層と実質的に同じ硬度を有する、請求項1に記載の研磨パッド。
- 上記外側部分の上面より上に突出する上記内側部分の角が平滑化される、請求項1に記載の研磨パッド。
- 上記外側部分の上面より上に突出する上記研磨層の内縁の角が平滑化される、請求項1に記載の研磨パッド。
- 上記内側部分は、上記外側部分に成形される、請求項1に記載の研磨パッド。
- 上記研磨層、上記第1部分及び上記第2部分の底面は、実質的に同一平面上にある、請求項1に記載の研磨パッド。
- 上記研磨層は、微孔性フェールト基板上に配設されたポロメリック被覆を含む、請求項1に記載の研磨パッド。
- 研磨パッドを製造する方法であって、
不透明な研磨層のアパーチャーに、該研磨層の研磨面に対してくぼんだ上面を有する外側の第1の光透過層を形成するステップと、
上記第1の光透過層のアパーチャーに、上記研磨面と実質的に同一平面である上面を有する内側の第2の光透過層を形成するステップと、を備え、
上記外側の第1の光透過層は、上記内側の第2の光透過層よりも硬い、方法。 - 第1の光透過層のアパーチャーに第2の光透過層を形成する上記ステップは、上記第1の光透過層に穴をカットする段階を含む、請求項10に記載の方法。
- 第1の光透過層のアパーチャーに第2の光透過層を形成する上記ステップは、上記第1の光透過層の穴を液体先駆体で埋めて、上記研磨面より上に突出するメニスカスを生成する段階と、上記先駆体を硬化させる段階とを含む、請求項10に記載の方法。
- 上記第2部分の上面が上記研磨面と実質的に同一平面となるまで上記本体を磨く段階を更に含む、請求項12に記載の方法。
- 上記第1部分の上面より上に突出する上記第2部分の角を平滑化するステップを更に備えた、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US81842306P | 2006-07-03 | 2006-07-03 | |
US60/818,423 | 2006-07-03 | ||
PCT/US2007/072690 WO2008005951A2 (en) | 2006-07-03 | 2007-07-02 | Polishing pad with window having multiple portions |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009542451A JP2009542451A (ja) | 2009-12-03 |
JP2009542451A5 JP2009542451A5 (ja) | 2010-08-12 |
JP5277163B2 true JP5277163B2 (ja) | 2013-08-28 |
Family
ID=38895428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009518606A Active JP5277163B2 (ja) | 2006-07-03 | 2007-07-02 | 複数の部分を有する窓をもつ研磨パッド |
Country Status (4)
Country | Link |
---|---|
US (2) | US7942724B2 (ja) |
JP (1) | JP5277163B2 (ja) |
TW (1) | TWI370039B (ja) |
WO (1) | WO2008005951A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7967661B2 (en) * | 2008-06-19 | 2011-06-28 | Micron Technology, Inc. | Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
US20110281510A1 (en) * | 2010-05-12 | 2011-11-17 | Applied Materials, Inc. | Pad Window Insert |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
TWI521625B (zh) * | 2010-07-30 | 2016-02-11 | 應用材料股份有限公司 | 使用光譜監測來偵測層級清除 |
CN103222034B (zh) * | 2010-11-18 | 2016-03-09 | 嘉柏微电子材料股份公司 | 包含透射区域的抛光垫 |
US8920219B2 (en) * | 2011-07-15 | 2014-12-30 | Nexplanar Corporation | Polishing pad with alignment aperture |
JP2014113644A (ja) * | 2012-12-06 | 2014-06-26 | Toyo Tire & Rubber Co Ltd | 研磨パッド |
US8961266B2 (en) * | 2013-03-15 | 2015-02-24 | Applied Materials, Inc. | Polishing pad with secondary window seal |
US20160144477A1 (en) * | 2014-11-21 | 2016-05-26 | Diane Scott | Coated compressive subpad for chemical mechanical polishing |
US9475168B2 (en) * | 2015-03-26 | 2016-10-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad window |
US10213894B2 (en) * | 2016-02-26 | 2019-02-26 | Applied Materials, Inc. | Method of placing window in thin polishing pad |
KR102664256B1 (ko) * | 2016-02-26 | 2024-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 얇은 연마 패드 내의 윈도우 |
CN109641342A (zh) * | 2016-08-31 | 2019-04-16 | 应用材料公司 | 具有环形工作台或抛光垫的抛光*** |
JP7022647B2 (ja) | 2018-05-08 | 2022-02-18 | 株式会社荏原製作所 | 光透過性部材、研磨パッドおよび基板研磨装置 |
US11633830B2 (en) * | 2020-06-24 | 2023-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP polishing pad with uniform window |
US20220203495A1 (en) | 2020-12-29 | 2022-06-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cmp polishing pad with window having transparency at low wavelengths and material useful in such window |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
EP1176630B1 (en) * | 1999-03-31 | 2007-06-27 | Nikon Corporation | Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device |
JP3367496B2 (ja) * | 2000-01-20 | 2003-01-14 | 株式会社ニコン | 研磨体、平坦化装置、半導体デバイス製造方法、および半導体デバイス |
US6454630B1 (en) * | 1999-09-14 | 2002-09-24 | Applied Materials, Inc. | Rotatable platen having a transparent window for a chemical mechanical polishing apparatus and method of making the same |
US6685537B1 (en) * | 2000-06-05 | 2004-02-03 | Speedfam-Ipec Corporation | Polishing pad window for a chemical mechanical polishing tool |
US6641470B1 (en) * | 2001-03-30 | 2003-11-04 | Lam Research Corporation | Apparatus for accurate endpoint detection in supported polishing pads |
KR100858392B1 (ko) * | 2001-04-25 | 2008-09-11 | 제이에스알 가부시끼가이샤 | 반도체 웨이퍼용 연마 패드와, 이를 구비한 반도체웨이퍼용 연마 적층체와, 반도체 웨이퍼의 연마 방법 |
JP4570286B2 (ja) * | 2001-07-03 | 2010-10-27 | ニッタ・ハース株式会社 | 研磨パッド |
JP2003133270A (ja) * | 2001-10-26 | 2003-05-09 | Jsr Corp | 化学機械研磨用窓材及び研磨パッド |
US6866559B2 (en) * | 2002-02-04 | 2005-03-15 | Kla-Tencor Technologies | Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad |
JP2003285259A (ja) * | 2002-03-28 | 2003-10-07 | Toray Ind Inc | 研磨パッド、研磨装置及び半導体デバイスの製造方法 |
US20040224611A1 (en) * | 2003-04-22 | 2004-11-11 | Jsr Corporation | Polishing pad and method of polishing a semiconductor wafer |
US6997777B2 (en) * | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Ultrasonic welding method for the manufacture of a polishing pad comprising an optically transmissive region |
US7264536B2 (en) * | 2003-09-23 | 2007-09-04 | Applied Materials, Inc. | Polishing pad with window |
US7258602B2 (en) * | 2003-10-22 | 2007-08-21 | Iv Technologies Co., Ltd. | Polishing pad having grooved window therein and method of forming the same |
US7323415B2 (en) * | 2004-04-23 | 2008-01-29 | Jsr Corporation | Polishing pad for semiconductor wafer, polishing multilayered body for semiconductor wafer having same, and method for polishing semiconductor wafer |
-
2007
- 2007-06-29 US US11/771,765 patent/US7942724B2/en active Active
- 2007-07-02 WO PCT/US2007/072690 patent/WO2008005951A2/en active Application Filing
- 2007-07-02 JP JP2009518606A patent/JP5277163B2/ja active Active
- 2007-07-03 TW TW096124191A patent/TWI370039B/zh active
-
2011
- 2011-05-12 US US13/106,635 patent/US8475228B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2009542451A (ja) | 2009-12-03 |
WO2008005951A2 (en) | 2008-01-10 |
WO2008005951A3 (en) | 2009-04-09 |
TW200824841A (en) | 2008-06-16 |
TWI370039B (en) | 2012-08-11 |
US8475228B2 (en) | 2013-07-02 |
US7942724B2 (en) | 2011-05-17 |
US20110212673A1 (en) | 2011-09-01 |
US20080003923A1 (en) | 2008-01-03 |
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