JP5276798B2 - 画素をバーストリセット動作と統合することにより改善された性能を有するcmosイメージセンサ - Google Patents
画素をバーストリセット動作と統合することにより改善された性能を有するcmosイメージセンサ Download PDFInfo
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- JP5276798B2 JP5276798B2 JP2007120877A JP2007120877A JP5276798B2 JP 5276798 B2 JP5276798 B2 JP 5276798B2 JP 2007120877 A JP2007120877 A JP 2007120877A JP 2007120877 A JP2007120877 A JP 2007120877A JP 5276798 B2 JP5276798 B2 JP 5276798B2
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- 238000012546 transfer Methods 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005036 potential barrier Methods 0.000 claims description 10
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- 230000000875 corresponding effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
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- 230000002596 correlated effect Effects 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (9)
- 電荷を検出するフローティング拡散領域と、
電荷を排出する、前記フローティング拡散領域と同じ導電型の接合領域と、
バーストリセットパルスであるリセット信号の制御を受けて、前記フローティング拡散領域から前記接合領域への電荷転送を制御するゲートと、
該ゲートの下部に配置された電位井戸と、
前記電位井戸と前記接合領域との間に形成され、基板に接続されたゲートを有する接合型電界効果トランジスタを形成する第1のタイプである第1の拡散領域及び第2のタイプである第2の拡散領域と、前記接合領域と共有される1つの接合領域とを有するピンド電位バリアと
を備え、前記電位井戸が、前記ゲートの下部の基板内に形成されたドーピング領域により実現されることを特徴とするリセットトランジスタ。 - 前記電位井戸が、前記ゲートの下部の基板内において前記接合領域側に形成されることを特徴とする請求項1に記載のリセットトランジスタ。
- フォトダイオードと、
リセットトランジスタを備えるリセット素子と
を備え、
前記リセットトランジスタが、
電荷を検出するフローティング拡散領域と、
電荷を排出する、前記フローティング拡散領域と同じ導電型の接合領域と、
バーストリセットパルスであるリセット信号の制御を受けて、前記フローティング拡散領域から前記接合領域への電荷転送を制御するゲートと、
前記ゲートの下部に配置された電位井戸と、
前記電位井戸と前記接合領域との間に形成され、基板に接続されたゲートを有する接合型電界効果トランジスタを形成する第1のタイプである第1の拡散領域及び第2のタイプである第2の拡散領域と、前記接合領域と共有される1つの接合領域とを有するピンド電位バリアと
を備え、前記電位井戸が、前記ゲートの下部の基板内に形成されたドーピング領域により実現されることを特徴とするイメージセンサの画素。 - 前記フローティング拡散領域の光生成電荷(photogenerated charge)を増幅するソースフォロワートランジスタと、
該ソースフォロワートランジスタの出力を選択して画素出力に提供するアドレストランジスタと
を更に備えることを特徴とする請求項3に記載のイメージセンサの画素。 - フォトダイオードの光生成電荷(photogenerated charge)を前記フローティング拡散領域に転送するトランスファートランジスタと、
前記フローティング拡散領域の電荷を増幅するソースフォロワートランジスタと、
該ソースフォロワートランジスタの出力を選択して画素出力に提供するアドレストランジスタと
を更に備えることを特徴とする請求項3に記載のイメージセンサの画素。 - 共通のフローティング拡散領域に並列接続された複数のフォトダイオードと、
前記フローティング拡散領域をリセットするリセットトランジスタと
を備え、
前記リセットトランジスタが、
電荷を排出する、前記フローティング拡散領域と同じ導電型の接合領域と、
バーストリセットパルスであるリセット信号の制御を受けて、前記フローティング拡散領域から前記接合領域への電荷転送を制御するゲートと、
該ゲートの下部に配置された電位井戸と、
前記電位井戸と前記接合領域との間に形成され、基板に接続されたゲートを有する接合型電界効果トランジスタを形成する第1のタイプである第1の拡散領域及び第2のタイプである第2の拡散領域と、前記接合領域と共有される1つの接合領域とを有するピンド電位バリアと
を備え、前記電位井戸が、前記ゲートの下部の基板内に形成されたドーピング領域により実現されることを特徴とする共有されたフォトサイト画素。 - 複数の前記フォトダイオードから前記フローティング拡散領域への電荷転送をそれぞれ制御する複数の電荷転送ゲートを更に備えることを特徴とする請求項6に記載の共有されたフォトサイト画素。
- 前記電位井戸が、前記ゲートの下部の基板内において前記接合領域側に形成されることを特徴とする請求項6又は7に記載の共有されたフォトサイト画素。
- 前記ピンド電位バリアが、前記フォトダイオードと実質的に同じピンド電位を有することを特徴とする請求項6に記載の共有されたフォトサイト画素。
Applications Claiming Priority (2)
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KR1020060040712A KR100776146B1 (ko) | 2006-05-04 | 2006-05-04 | 화소를 버스트 리셋 동작과 통합하여 개선된 성능을 갖는cmos이미지 센서 |
KR10-2006-0040712 | 2006-05-04 |
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JP2012273440A Division JP5730844B2 (ja) | 2006-05-04 | 2012-12-14 | 画素をバーストリセット動作と統合することにより改善された性能を有するcmosイメージセンサ |
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JP2007300122A JP2007300122A (ja) | 2007-11-15 |
JP5276798B2 true JP5276798B2 (ja) | 2013-08-28 |
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JP2007120877A Expired - Fee Related JP5276798B2 (ja) | 2006-05-04 | 2007-05-01 | 画素をバーストリセット動作と統合することにより改善された性能を有するcmosイメージセンサ |
JP2012273440A Expired - Fee Related JP5730844B2 (ja) | 2006-05-04 | 2012-12-14 | 画素をバーストリセット動作と統合することにより改善された性能を有するcmosイメージセンサ |
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Country Status (4)
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US (2) | US7622758B2 (ja) |
JP (2) | JP5276798B2 (ja) |
KR (1) | KR100776146B1 (ja) |
TW (1) | TWI351104B (ja) |
Families Citing this family (12)
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KR100776146B1 (ko) * | 2006-05-04 | 2007-11-15 | 매그나칩 반도체 유한회사 | 화소를 버스트 리셋 동작과 통합하여 개선된 성능을 갖는cmos이미지 센서 |
KR101030263B1 (ko) * | 2006-11-30 | 2011-04-22 | 고쿠리츠 다이가꾸 호우진 시즈오까 다이가꾸 | 반도체 거리 측정 소자 및 고체 촬상 장치 |
KR100851494B1 (ko) | 2007-05-14 | 2008-08-08 | 매그나칩 반도체 유한회사 | 수직적으로 집적된 세트 및 리셋 다이오드를 갖는 cmos이미지 센서를 위한 소형 픽셀 |
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-
2006
- 2006-05-04 KR KR1020060040712A patent/KR100776146B1/ko active IP Right Grant
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2007
- 2007-04-26 TW TW096114808A patent/TWI351104B/zh not_active IP Right Cessation
- 2007-04-27 US US11/790,767 patent/US7622758B2/en active Active
- 2007-05-01 JP JP2007120877A patent/JP5276798B2/ja not_active Expired - Fee Related
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2009
- 2009-10-28 US US12/607,366 patent/US8810702B2/en active Active
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JP2007300122A (ja) | 2007-11-15 |
TWI351104B (en) | 2011-10-21 |
JP2013058805A (ja) | 2013-03-28 |
KR100776146B1 (ko) | 2007-11-15 |
US8810702B2 (en) | 2014-08-19 |
KR20070108010A (ko) | 2007-11-08 |
TW200812076A (en) | 2008-03-01 |
US20070257286A1 (en) | 2007-11-08 |
JP5730844B2 (ja) | 2015-06-10 |
US7622758B2 (en) | 2009-11-24 |
US20100033610A1 (en) | 2010-02-11 |
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