JP5276587B2 - 低マイクロクラックの多孔質セラミックハニカム、およびその製造方法 - Google Patents
低マイクロクラックの多孔質セラミックハニカム、およびその製造方法 Download PDFInfo
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- JP5276587B2 JP5276587B2 JP2009518290A JP2009518290A JP5276587B2 JP 5276587 B2 JP5276587 B2 JP 5276587B2 JP 2009518290 A JP2009518290 A JP 2009518290A JP 2009518290 A JP2009518290 A JP 2009518290A JP 5276587 B2 JP5276587 B2 JP 5276587B2
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- cordierite
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- honeycomb
- porous ceramic
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- 239000000919 ceramic Substances 0.000 title claims description 104
- 238000004519 manufacturing process Methods 0.000 title description 6
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 122
- 229910052878 cordierite Inorganic materials 0.000 claims description 121
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 14
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- 239000013078 crystal Substances 0.000 description 13
- 238000009826 distribution Methods 0.000 description 13
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
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- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 5
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
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- HZVVJJIYJKGMFL-UHFFFAOYSA-N almasilate Chemical compound O.[Mg+2].[Al+3].[Al+3].O[Si](O)=O.O[Si](O)=O HZVVJJIYJKGMFL-UHFFFAOYSA-N 0.000 description 4
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- RREGISFBPQOLTM-UHFFFAOYSA-N alumane;trihydrate Chemical compound O.O.O.[AlH3] RREGISFBPQOLTM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
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Description
TSP=MORRT/[ERT][CTEH]
により定義され、ここで、MORRTは、室温での4点曲げにおけるコージエライトセラミックの破壊係数を示し、CTEHは、材料の高温熱膨張係数の平均値を示し、その係数は500℃から900℃の温度範囲に亘る加熱について計算される。ハニカム体の壁は、無作為または好ましいコージエライト結晶配向を有していてもよいが、本発明の代わりの態様による優先配向(壁表面に対して平行なコージエライト結晶のz軸)は、無作為な結晶配向と比較して、比較的低いCTEを与えることが分かった。
E比1000≦1.05、ここで、E比1000=EH/ERT、
TSP≧525℃、ここで、熱衝撃パラメータ(TSP)は
TSP=MORRT/[ERT][CTEH]
として定義され、(MORRT)は室温での破壊係数であり、(CTEH)は、500℃と900℃の間の高温熱膨張係数である
を示すコージエライトセラミック主相を含む構造体が提供される。MOR、E、およびCTEの全ては、軸方向とも称されるチャンネルの長さに対して平行なセル状検体について測定される。EHは、室温からの加熱中に測定される。さらに、本発明は、E比1000≦1.01、E比1000≦1.00、E比1000≦0.98、またはさらにはE比1000≦0.93を示すであろう。さらに本発明のハニカム構造体は、CTE(25〜800℃)≦18×10-7/℃、CTE(25〜800℃)≦16×10-7/℃、CTE(25〜800℃)≦15×10-7/℃、CTE(25〜800℃)≦14×10-7/℃、CTE(25〜800℃)≦12×10-7/℃、CTE(25〜800℃)≦10×10-7/℃、またはさらにはCTE(25〜800℃)≦9×10-7/℃などの比較的低いCTEを示すであろう。上述したようなE比1000≦1.05およびTSP≧525℃に加え、本発明のさらなる実施の形態は、比較的狭い細孔径分布を含む多孔質の細孔微小構造により特徴付けられるであろう。特に、ある実施の形態は、式df=(d50−d10)/d50により定義される気孔率d因子(df)が、df≦0.48、df≦0.40、df≦0.37、df≦0.35、df≦0.30、df≦0.28、またはさらにはdf≦0.25であるような狭い細孔径分布をさらに含むであろう。さらに、低マイクロクラックハニカムの細孔径分布の狭さは、式db=(d90−d10)/d50として定義される全細孔径幅(db)が、db≦1.65、db≦1.23、db≦1.21、db≦1.15、db≦1.00、db≦0.90、db≦0.80、またはさらにはdb≦0.70であるような細孔微小構造により定義される。dbを低下させると、フィルタ用途と基体用途の両方にとって強度が、フィルタにとって濾過高率が増加する。
として定義される熱膨張差因子Δαmcに反映されることが分かり、ここで、%(Mu+Sp+Sa+Al)はハニカム中に存在するムライト、スピネル、サファーリン、およびコランダムの質量百分率の合計であり、IAは先に記載した軸I比である。図8は、コージエライトの試験例と比較例の副結晶相について正規化されたCTEのCTE−0.6(%Mu+Sp+Sa+Al)対軸I比のプロットを示している。正規化されたCTEが、CTE対I比の曲線の下にある距離は、各試験例についてΔαmcの値と等しい。
PMC=7.06+0.164(質量%生カオリン)+0.095(質量%か焼カオリン)−0.00870(質量%アルミナ形成源)(アルミナ形成源のd50)−0.0657(質量%細孔形成剤)+0.022(800℃から900℃への加熱速度)+0.025(1200℃から1300℃への加熱速度)−0.018(1350℃からTmaxへの加熱速度)−0.462(質量%コロイド金属酸化物源)、および
PST=0.067+0.000967(質量%細孔形成剤)−0.00000516(質量%細孔形成剤)(細孔形成剤のd50)−0.000921(質量%カオリン+質量%か焼カオリン)+0.0000502(質量%アルミナ形成源)(アルミナ形成源のd50)−0.0000143(質量%タルク)(タルクのd50)+0.00392(質量%コロイド金属酸化物源)。
11 チャンネル
14 交差するセル壁
15 表皮
100 ハニカムフィルタ
108 入口チャンネル
110 出口チャンネル
112 栓
Claims (7)
- 多孔質セラミックハニカム構造体であって、
低マイクロクラック形成およびコージエライト晶子配向を示し、かつTSP=MORRT/[ERT][CTEH]として計算される前記構造体の熱衝撃パラメータ(TSP)が少なくとも400℃となるような、室温での弾性率(ERT)、室温での破壊係数強度(MORRT)、および高温(500〜900℃)熱膨張係数(CTEH)を有する、コージエライトセラミック主相を含み、
該構造体のCTE(25〜800℃)≦15×10-7/℃であり、
前記コージェライトセラミック主相が、Δ I =I T −I A ≦0.1で示される無作為コージェライト晶子配向を有し、I T およびI A はそれぞれ、該構造体について測定した横I比および軸I比であり、
該多孔質セラミックハニカム構造体は、(E H )が高温(1000℃)での弾性率であり、(E RT )が室温での弾性率であり、E 比 =E H /E RT である比(E 比 )≦1.05を有することを特徴とする、多孔質セラミックハニカム構造体。 - 因子df≦0.48およびdb≦1.65、
細孔連通性因子PCF≧40、および
Δαmc≦5.0の熱膨張差因子(Δαmc)、
を有することを特徴とする請求項1記載の多孔質セラミックハニカム構造体。 - 25〜800℃の間で測定された12〜15×10-7/℃の範囲にあるCTEを有することを特徴とする請求項1記載の多孔質セラミックハニカム構造体。
- (E比)≦0.95を有することを特徴とする請求項1記載の多孔質セラミックハニカム構造体。
- 総気孔率≧46%を有することを特徴とする請求項1記載の多孔質セラミックハニカム構造体。
- 10〜30μmのメジアン細孔径(d50)を有することを特徴とする請求項1記載の多孔質セラミックハニカム構造体。
- ガソリンエンジンの排ガス後処理のための触媒コンバータ、ディーゼル酸化触媒用基体、NOx吸着基体、NOx触媒基体、ディーゼルエンジン排ガス後処理のための触媒ディーゼル微粒子フィルタ、およびディーゼルエンジン排ガス後処理のための非触媒ディーゼル微粒子フィルタからなる群より選択される装置として構成された請求項1記載の多孔質セラミックハニカム構造体。
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JP2009542569A (ja) | 2009-12-03 |
WO2008005291A1 (en) | 2008-01-10 |
JP5113168B2 (ja) | 2013-01-09 |
JP2009542429A (ja) | 2009-12-03 |
WO2008005337A1 (en) | 2008-01-10 |
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EP2038236A1 (en) | 2009-03-25 |
EP2043964A1 (en) | 2009-04-08 |
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