JP5268626B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP5268626B2 JP5268626B2 JP2008331822A JP2008331822A JP5268626B2 JP 5268626 B2 JP5268626 B2 JP 5268626B2 JP 2008331822 A JP2008331822 A JP 2008331822A JP 2008331822 A JP2008331822 A JP 2008331822A JP 5268626 B2 JP5268626 B2 JP 5268626B2
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- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 238000004381 surface treatment Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 171
- 238000005530 etching Methods 0.000 description 17
- 238000009826 distribution Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Plasma Technology (AREA)
Description
2 ガス噴出し孔
3 シャワープレート中心
4,27 シャワープレート外周部位置のガス噴出し孔
5 シャワープレートガス供給面
6 シャワープレート固定用ネジ孔部
7 被加工試料
8 プレート
9 ガス供給部
10 ガス分散層
11 分散プレート
12 アンテナ
13 放電用高周波電源
14 放電空間
15 静電吸着機能付の電極
16,17 高周波電源
18,19,20 自動整合器
21,22 絶縁性の液体冷却循環機能
23 シリコン製フォーカスリング
24 真空容器
25 絶縁材
26 アース板
Claims (4)
- 真空容器と、前記真空容器内に設けられ被加工試料を載置する試料台と、前記試料台に対向し前記被加工試料直径よりも大きな直径のガス供給面を有するガス供給手段とを有し、前記被加工試料の表面処理を行うプラズマ処理装置において、
前記ガス供給手段のガス供給面の前記被加工試料に対向する領域には複数の同一直径のガス噴出し孔が配置されており、
前記ガス噴出し孔は、前記被加工試料直径よりも内側である内側領域内においてその孔数密度が全体で均等に配置され、前記被加工試料直径の1倍から1.1倍の範囲であって前記内側領域に隣接した外側領域内において前記内側領域内における前記ガス噴出し孔の孔数密度の1.5倍から4倍の範囲内の孔数密度で配置されたことを特徴とするプラズマ処理装置。
- 真空容器と、前記真空容器内に設けられ被加工試料を載置する試料台と、前記試料台に対向し前記被加工試料直径よりも大きな直径のガス供給面を有するガス供給手段とを有し、前記被加工試料の表面処理を行うプラズマ処理装置において、
前記ガス供給手段のガス供給面の前記被加工試料に面する領域には複数の同一直径のガス噴出し孔が配置されており、
前記ガス噴出し孔は、前記被加工試料直径の1倍から1.1倍の範囲の外側領域内において、前記被加工試料直径よりも内側であって前記外側領域に隣接した内側領域内にける同じ値にされたガス噴出し孔直径の1.1倍から1.5倍の範囲内の直径の値で複数配置されたことを特徴とするプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置において、
前記ガス供給面と前記試料台の前記試料が載置される面との間の距離が24mmにされたことを特徴とするプラズマ処理装置。
- 請求項1乃至3のいずれかに記載のプラズマ処理装置において、
前記被加工試料直径をD、前記被加工試料から前記ガス供給面までの距離をLとした時、アスペクト比(D/L)が2以上であることを特徴とするプラズマ処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008331822A JP5268626B2 (ja) | 2008-12-26 | 2008-12-26 | プラズマ処理装置 |
KR1020090006817A KR101039087B1 (ko) | 2008-12-26 | 2009-01-29 | 플라즈마처리장치 |
US12/392,237 US20100163187A1 (en) | 2008-12-26 | 2009-02-25 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008331822A JP5268626B2 (ja) | 2008-12-26 | 2008-12-26 | プラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010153680A JP2010153680A (ja) | 2010-07-08 |
JP2010153680A5 JP2010153680A5 (ja) | 2012-02-16 |
JP5268626B2 true JP5268626B2 (ja) | 2013-08-21 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008331822A Expired - Fee Related JP5268626B2 (ja) | 2008-12-26 | 2008-12-26 | プラズマ処理装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100163187A1 (ja) |
JP (1) | JP5268626B2 (ja) |
KR (1) | KR101039087B1 (ja) |
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US5871811A (en) * | 1986-12-19 | 1999-02-16 | Applied Materials, Inc. | Method for protecting against deposition on a selected region of a substrate |
US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
US6050506A (en) * | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
KR20020080014A (ko) * | 2001-04-10 | 2002-10-23 | 주식회사 에이티씨 | 플라즈마 처리 장치 |
JP4502639B2 (ja) * | 2003-06-19 | 2010-07-14 | 財団法人国際科学振興財団 | シャワープレート、プラズマ処理装置、及び、製品の製造方法 |
US20050284573A1 (en) * | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2007042951A (ja) * | 2005-08-04 | 2007-02-15 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2008235611A (ja) * | 2007-03-21 | 2008-10-02 | Tohoku Univ | プラズマ処理装置及びプラズマ処理方法 |
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2008
- 2008-12-26 JP JP2008331822A patent/JP5268626B2/ja not_active Expired - Fee Related
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KR101039087B1 (ko) | 2011-06-07 |
JP2010153680A (ja) | 2010-07-08 |
US20100163187A1 (en) | 2010-07-01 |
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