JP5255929B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5255929B2 JP5255929B2 JP2008176063A JP2008176063A JP5255929B2 JP 5255929 B2 JP5255929 B2 JP 5255929B2 JP 2008176063 A JP2008176063 A JP 2008176063A JP 2008176063 A JP2008176063 A JP 2008176063A JP 5255929 B2 JP5255929 B2 JP 5255929B2
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- wiring
- signal
- return path
- substrate
- wire
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
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Description
本発明と比較するため、上述した特許文献1乃至3の信号電流とリターン電流の流れるパスと、交流磁界の発生について、本発明者の解析結果を参考までに記載しておく。
202 GNDワイヤ(第2のボンディングワイヤ)
203 信号ワイヤ(第1のボンディングワイヤ)
204 信号パッド(第1のパッド)
205 ICチップ(半導体チップ)
206 パッケージ基板(基板)
207 配線層1
208 信号スルーホール
209、209A、209B GNDスルーホール
210 層間絶縁層
211、211C、211D、211E BGAボール
211A BGAボール(第1の外部端子)
211B BGAボール(第2の外部端子、外部接続GND端子)
212 配線層2
213 配線層3
214 配線層4
215 GNDパッド(第2のパッド)
216 ボンディングパッド
220 ステッチ
301 信号配線パターン(第1の配線パターン)
302 GND配線パターン(第2の配線パターン)
302B GNDプレーン
401 信号電流パス
402 リターン電流パス
403 領域1(S1)
404、405 領域2(S2)
406 領域3(S3)
407、408 経路
I401 信号電流
I402 リターン電流
Claims (9)
- 半導体チップと、
前記半導体チップを搭載する基板と、
前記半導体チップに設けられた第1のパッドから前記基板を経由して第1の外部端子まで接続された信号配線と、
前記第1の外部端子に近接して設けられた第2の外部端子から前記基板を経由して前記第1のパッドに近接して設けられた第2のパッドまで接続された配線パターンであって前記信号配線に対するリターンパスとなるリターンパス配線と、
を備えた半導体装置であって、
前記信号配線と、前記リターンパス配線とが同一平面上に存在し、前記信号配線と、前記リターンパス配線とが途中で交差している半導体装置。 - 前記信号配線が、前記第1のパッドと前記基板の半導体チップ搭載面に設けられた第1の配線パターンとを接続する第1のボンディングワイヤを含み、
前記リターンパス配線が、前記第2のパッドと前記半導体チップ搭載面に設けられた第2の配線パターンとを接続する第2のボンディングワイヤを含み、
前記第1の配線パターンと前記第2の配線パターンとが前記基板の同一平面層上に隣接して配置され、
前記第1の配線パターンは、前記第1のボンディングワイヤが接続される第1のステッチを備え、
前記第2の配線パターンは、前記第2のボンディングワイヤが接続される第2のステッチを備え、
前記第1のステッチが、前記第2のステッチより、前記半導体チップに近接して配置されたことを特徴とする請求項1記載の半導体装置。 - 前記第1のボンディングワイヤと前記第2のボンディングワイヤとは、一方が他方より低く、かつ、短いボンディングワイヤで接続するように構成された請求項1又は2記載の半導体装置。
- 前記第1の外部端子と前記第2の外部端子が前記基板の前記半導体チップ搭載面の反対面に設けられ、前記信号配線と前記リターンパス配線とが前記半導体チップ搭載面に設けられた配線パターンにおいて交差している請求項1乃至3いずれか1項記載の半導体装置。
- 前記半導体チップを搭載する基板が多層配線基板であり、前記信号配線と前記リターンパス配線とが前記多層配線基板のいずれかの配線層で交差している請求項1乃至3いずれか1項記載の半導体装置。
- 前記第1の外部端子と前記第2の外部端子が前記多層配線基板の前記半導体チップ搭載面の反対面に設けられ、前記信号配線と前記リターンパス配線とが前記多層配線基板の前記反対面以外のいずれかの配線層で交差している請求項5記載の半導体装置。
- 前記信号配線と前記リターンパス配線とにより形成される電流ループは、前記交差により2つの領域に区分され、前記2つの領域の断面積が等しい請求項1乃至6いずれか1項記載の半導体装置。
- リターンパス配線が複数の経路で前記第2の外部端子から前記第2のパッドまで接続されており、前記各経路毎のリターンパスと前記信号配線が同一平面上に設けられ、前記信号配線と前記各リターンパスとの電流ループにより形成される磁界の総和が小さくなるように、前記信号配線と各リターンパスはそれぞれ途中で交差している請求項1乃至6いずれか1項記載の半導体装置。
- 前記リターンパス配線が、グランドまたは電源に接続された配線である請求項1乃至8いずれか1項記載の半導体装置。
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JP2008176063A JP5255929B2 (ja) | 2008-07-04 | 2008-07-04 | 半導体装置 |
US12/458,217 US20100007005A1 (en) | 2008-07-04 | 2009-07-02 | Semiconductor device |
US13/531,165 US20120261840A1 (en) | 2008-07-04 | 2012-06-22 | Semiconductor device |
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JP2008176063A JP5255929B2 (ja) | 2008-07-04 | 2008-07-04 | 半導体装置 |
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JP5255929B2 true JP5255929B2 (ja) | 2013-08-07 |
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Cited By (1)
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JP2011155184A (ja) * | 2010-01-28 | 2011-08-11 | Renesas Electronics Corp | 配線構造 |
US20160309954A1 (en) * | 2012-03-15 | 2016-10-27 | Comigo Ltd. | System and method for remotely controlling a food preparing appliance |
CN115410935B (zh) * | 2022-08-30 | 2023-09-26 | 江苏泰治科技股份有限公司 | 一种ic芯片封装时避免焊线交叉的布线方法及*** |
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JP3847839B2 (ja) * | 1995-06-12 | 2006-11-22 | シチズン時計株式会社 | 半導体装置 |
JP3294490B2 (ja) * | 1995-11-29 | 2002-06-24 | 株式会社日立製作所 | Bga型半導体装置 |
US6429515B1 (en) * | 2000-05-05 | 2002-08-06 | Amkor Technology, Inc. | Long wire IC package |
JP2002043459A (ja) * | 2000-07-25 | 2002-02-08 | Mitsui Chemicals Inc | 低インダクタンス型電子部品パッケージおよびその製造方法 |
US6770963B1 (en) * | 2001-01-04 | 2004-08-03 | Broadcom Corporation | Multi-power ring chip scale package for system level integration |
JP2005129904A (ja) * | 2003-09-29 | 2005-05-19 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
US6992377B2 (en) * | 2004-02-26 | 2006-01-31 | Freescale Semiconductor, Inc. | Semiconductor package with crossing conductor assembly and method of manufacture |
US7361977B2 (en) * | 2005-08-15 | 2008-04-22 | Texas Instruments Incorporated | Semiconductor assembly and packaging for high current and low inductance |
US7501709B1 (en) * | 2006-08-25 | 2009-03-10 | Altera Corporation | BGA package with wiring schemes having reduced current loop paths to improve cross talk control and characteristic impedance |
JP2009170512A (ja) * | 2008-01-11 | 2009-07-30 | Toshiba Corp | 半導体装置 |
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US20100007005A1 (en) | 2010-01-14 |
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