JP5254454B2 - 改良された大面積光検出器 - Google Patents
改良された大面積光検出器 Download PDFInfo
- Publication number
- JP5254454B2 JP5254454B2 JP2011535015A JP2011535015A JP5254454B2 JP 5254454 B2 JP5254454 B2 JP 5254454B2 JP 2011535015 A JP2011535015 A JP 2011535015A JP 2011535015 A JP2011535015 A JP 2011535015A JP 5254454 B2 JP5254454 B2 JP 5254454B2
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- photodetector
- group
- electrode
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
欧州特許第063422号は、「櫛歯型(interdigital)」電極を形成するようにマイクロストリップラインの伝導層が間を空けられ、マイクロストリップラインに関する個別の接地面が、光検出器の構造の底面に位置される光検出器を開示する。
Claims (4)
- 第1のグループ(101、103、111)および第2のグループ(102、110)の薄型長尺状の電極を備える光検出器(300、500)であって、前記各グループの電極がそのグループ用の第1の共通導体(301、303)に接続され、前記電極(101〜111)が感光性材料の層(115)の上または中に位置し、一方のグループの各電極が他方のグループの1つまたは複数の電極に直接隣接するように前記電極が互いにほぼ平行かつ交互配置されている、光検出器(300、500)であって、
前記第1の共通導体(301、303)が、ほぼ平面状であり、薄型長尺状の電極のそれぞれのグループの同じ端部側に配置され、上側導体(303)および下側導体(301)として構成され、前記導体(301、303)が、互いにほぼ平行であって少なくとも部分的に重なり合い、誘電体材料(401)によって分離され、それにより、2つの第1の共通導体(301、303)が第1のマイクロストリップラインの信号電極と接地面を形成し、前記第1のマイクロストリップラインが前記2つのグループの電極内で誘発される電流用の第1の結合器として機能し、かつ前記電極用および前記光検出器に接続することができる負荷(510)用の第1の整合ネットワークとして機能することを特徴とする、光検出器(300、500)。 - 前記2つの電極グループ間でバイアス電圧を生成するための接続線(DC BIAS)をさらに備える、請求項1に記載の光検出器(300、500)。
- 各電極グループ用の第2の共通導体をさらに備え、各電極グループの前記第1の共通導体と前記第2の共通導体が、前記電極の向かい合う遠位端に配置され、各グループの前記第2の共通導体がほぼ平面状であり上側導体および下側導体として構成され、前記第2の共通導体が、互いにほぼ平行であって少なくとも部分的に重なり合い、誘電体材料によって分離され、それにより、前記2つの第2の共通導体が第2のマイクロストリップラインの導体および接地面を形成し、前記第2のマイクロストリップラインが前記2つのグループの電極内で誘発される電流用の第2の結合器(511)として機能し、かつ前記電極用および前記光検出器に接続することができる負荷用の第2の整合ネットワークとして機能する、請求項1または2に記載の光検出器(500)。
- 前記結合器(511、512)の一方が、前記光検出器のインピーダンスに整合するように適合された負荷(510)も備える、請求項3に記載の光検出器。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2008/065342 WO2010054685A1 (en) | 2008-11-12 | 2008-11-12 | An improved large area photo detector |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012508459A JP2012508459A (ja) | 2012-04-05 |
JP5254454B2 true JP5254454B2 (ja) | 2013-08-07 |
Family
ID=40298685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011535015A Expired - Fee Related JP5254454B2 (ja) | 2008-11-12 | 2008-11-12 | 改良された大面積光検出器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9006637B2 (ja) |
EP (1) | EP2356699B1 (ja) |
JP (1) | JP5254454B2 (ja) |
WO (1) | WO2010054685A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107609542B (zh) * | 2017-10-24 | 2021-01-26 | 京东方科技集团股份有限公司 | 光感器件、显示装置及指纹识别方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2836766A (en) * | 1956-05-15 | 1958-05-27 | Gen Electric | Electroluminescent devices and circuits |
US3659149A (en) * | 1970-11-18 | 1972-04-25 | Energy Conversion Devices Inc | Information display panel using amorphous semiconductor layer adjacent optical display material |
US4593304A (en) * | 1981-04-20 | 1986-06-03 | Hughes Aircraft Company | Heterostructure interdigital high speed photoconductive detector |
DE3278606D1 (en) * | 1981-04-20 | 1988-07-07 | Hughes Aircraft Co | Heterostructure interdigital high speed photoconductive detector |
JPS5961818A (ja) * | 1982-10-01 | 1984-04-09 | Seiko Epson Corp | 液晶表示装置 |
JPS6053089A (ja) * | 1983-09-02 | 1985-03-26 | Nec Corp | 半導体装置 |
JPS6220382A (ja) * | 1985-07-18 | 1987-01-28 | Fujitsu Ltd | 光半導体装置 |
GB2253480A (en) | 1991-03-07 | 1992-09-09 | Marconi Gec Ltd | Optical waveguide photodetector |
JPH05218490A (ja) * | 1991-10-31 | 1993-08-27 | Internatl Business Mach Corp <Ibm> | 金属・半導体・金属光検出器及びその製造方法 |
US5270532A (en) * | 1992-06-15 | 1993-12-14 | The United States Of America As Represented By The United States Department Of Energy | Traveling-wave photodetector |
US5404006A (en) * | 1993-02-22 | 1995-04-04 | Hughes Aircraft Company | High power capacity optical receiver apparatus and method employing distributed photodetectors |
JPH07142761A (ja) * | 1993-11-18 | 1995-06-02 | Mitsubishi Electric Corp | 受光素子ならびに受光素子アレイおよび画像検出装置ならびに画像検出方法 |
US5572014A (en) * | 1994-07-14 | 1996-11-05 | The Regents Of The University Of California | Highly efficient, ultrafast optical-to-electrical converter and method of operating the same |
JPH1197721A (ja) * | 1997-09-25 | 1999-04-09 | Kubota Corp | 光導電型受光素子 |
US6051827A (en) * | 1998-04-28 | 2000-04-18 | Xerox Corporation | Hybrid sensor pixel architecture with threshold response |
US6239422B1 (en) * | 1999-03-10 | 2001-05-29 | Trw Inc. | Variable electrode traveling wave metal-semiconductor-metal waveguide photodetector |
US6278820B1 (en) | 1999-04-28 | 2001-08-21 | The Boeing Company | High power and large bandwidth traveling-wave photodetector |
JP2002033577A (ja) * | 2000-07-18 | 2002-01-31 | Sony Corp | プリント基板間配線の接続方法及びプリント基板 |
US6403990B1 (en) * | 2001-03-27 | 2002-06-11 | Agilent Technologies, Inc. | Short turn-off time photoconductive switch |
US20030059146A1 (en) * | 2001-09-21 | 2003-03-27 | Dariush Mirshekar-Syahkal | Finned electrode structure for optical modulators |
WO2003090384A1 (en) | 2002-04-19 | 2003-10-30 | Imego Ab | An arrangement for transmitting and/or receiving electromagnetic signals |
WO2004036653A1 (en) * | 2002-10-17 | 2004-04-29 | Avanex Corporation | Travelling-wave monolithic optoelectronic module |
US6903432B2 (en) * | 2003-02-13 | 2005-06-07 | Intel Corporation | Photosensitive device |
SE526765C2 (sv) | 2003-09-26 | 2005-11-01 | Albax Systems Ab | En detektor för detektering av elektromagnetisk strålning |
JP2005302888A (ja) * | 2004-04-08 | 2005-10-27 | Sharp Corp | 光センサー、光センサーアレイ及びその駆動方法 |
JP2006019798A (ja) * | 2004-06-30 | 2006-01-19 | New Japan Radio Co Ltd | マイクロ波回路 |
KR101264789B1 (ko) * | 2006-06-30 | 2013-05-15 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법 |
-
2008
- 2008-11-12 JP JP2011535015A patent/JP5254454B2/ja not_active Expired - Fee Related
- 2008-11-12 US US13/128,776 patent/US9006637B2/en not_active Expired - Fee Related
- 2008-11-12 EP EP20080875309 patent/EP2356699B1/en not_active Not-in-force
- 2008-11-12 WO PCT/EP2008/065342 patent/WO2010054685A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2010054685A1 (en) | 2010-05-20 |
US20110215228A1 (en) | 2011-09-08 |
US9006637B2 (en) | 2015-04-14 |
EP2356699A1 (en) | 2011-08-17 |
EP2356699B1 (en) | 2013-08-21 |
JP2012508459A (ja) | 2012-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8207569B2 (en) | Intertwined finger capacitors | |
US7741929B2 (en) | Miniature quadrature hybrid | |
US10852618B2 (en) | Optical modulator having interconnecting ground electrodes for coplanar waveguides | |
US10534239B2 (en) | Optical modulator | |
JP6781618B2 (ja) | 光変調器 | |
JP4917253B2 (ja) | 分布型低域フィルタ伝送線回路装置 | |
KR20080038533A (ko) | 인터디지털 커패시터, 인덕터, 및 이들을 이용한 전송 선로및 결합기 | |
TW201312613A (zh) | 具有多樣寬度之指的指叉式電容器 | |
JP6926499B2 (ja) | 光変調器 | |
JP5254454B2 (ja) | 改良された大面積光検出器 | |
JP4197352B2 (ja) | 幅の広い結合間隔を伴う、ストリップ導体技術における方向性結合器 | |
CN107636516A (zh) | 光波导元件 | |
US7119633B2 (en) | Compensated interdigitated coupler | |
JPS6285227A (ja) | 光回路機能素子 | |
TW201937222A (zh) | 半導體裝置 | |
JP2878671B2 (ja) | 弾性表面波デバイス及び弾性表面波フィルタ | |
JPH0259649B2 (ja) | ||
JP4738182B2 (ja) | 薄膜コンデンサ | |
JPH07176919A (ja) | 方向性結合器 | |
JP2014224902A (ja) | 進行波電極型光変調器 | |
JP6867993B2 (ja) | フィルタ | |
CN110622063A (zh) | Mz调制器中的rf啁啾降低 | |
JP3839381B2 (ja) | 平衡非平衡変換器 | |
JPH03119815A (ja) | 浮き電極をもつ内部反射型一方向性弾性表面波変換器 | |
JP5404375B2 (ja) | 平衡−不平衡変換器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130321 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130327 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130417 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160426 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |