JP5236847B2 - Ii−vi族化合物半導体結晶および光電変換機能素子 - Google Patents
Ii−vi族化合物半導体結晶および光電変換機能素子 Download PDFInfo
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- JP5236847B2 JP5236847B2 JP2001244008A JP2001244008A JP5236847B2 JP 5236847 B2 JP5236847 B2 JP 5236847B2 JP 2001244008 A JP2001244008 A JP 2001244008A JP 2001244008 A JP2001244008 A JP 2001244008A JP 5236847 B2 JP5236847 B2 JP 5236847B2
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- 239000004065 semiconductor Substances 0.000 title claims description 91
- 150000001875 compounds Chemical class 0.000 title claims description 67
- 239000013078 crystal Substances 0.000 title claims description 57
- 238000006243 chemical reaction Methods 0.000 title claims description 33
- 229910007709 ZnTe Inorganic materials 0.000 claims description 142
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 29
- 238000005253 cladding Methods 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- -1 CdSe compound Chemical class 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 150000002829 nitrogen Chemical class 0.000 claims 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 25
- 238000000034 method Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 229910021474 group 7 element Inorganic materials 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- OEDMOCYNWLHUDP-UHFFFAOYSA-N bromomethanol Chemical compound OCBr OEDMOCYNWLHUDP-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Description
例えば、p型ZnTe単結晶基板表面にIII族元素を配置し、熱処理を施して前記III族元素をn型不純物として基板中に拡散させn型ZnTe層を形成して得られる積層構造を有している。
または、p型ZnTe単結晶基板上にp型ZnTeバッファ層と、Mg、Cd、Seなどを含むMgZnSeTe、CdZnSeTe等の四元混晶のp型クラッド層と、ZnTe活性層と、四元混晶のn型クラッド層とをエピタキシャル成長により順次形成して得られる積層構造を有している。
図1は、本発明に係る光電変換機能素子としての発光ダイオード(LED)の構成を表す説明図である。
本実施形態の発光ダイオードは、ZnTe基板11上にZnTeバッファ層12を介して、p型ZnTeクラッド層13と、ZnTe中間層14と、ZnCdTe活性層15と、ZnTe中間層16と、n型ZnTeクラッド層17と、n型CdSe/n型ZnTe超格子層(MQW:Multiple-quantum-well)と、n型CdSeコンタクト層と、が順次積層されてなる半導体素子の表面および裏面にAu電極10、20を形成して構成される。
まず、ZnTe単結晶基板11をブロム−メタノール溶液でエッチングした後、分子線エピタキシャル装置へ導入した。350℃で1分間の熱処理を施して基板表面を洗浄し、次いで、ZnTe単結晶基板11上にZnTeバッファ層12を240℃の低温で5nmの厚さで形成した。
例えば、本実施形態では、発光ダイオードの基体としてZnTe化合物半導体結晶を用いたが、ZnTe化合物半導体以外でも実質的にZnTeと格子整合する化合物半導体であれば同様の効果を得られると考えられる。
11 ZnTe基板
12 ZnTeバッファ層
13 p型ZnTeクラッド層
14 ZnTe中間層
15 ZnCdTe活性層
16 ZnTe中間層
17 n型ZnTeクラッド層
18 CdSe/ZnTe超格子層
19 n型CdSeコンタクト層
20 Au電極
Claims (7)
-
ZnTe基板上にZnTeバッファ層と、プラズマ励起により活性化した窒素をドーピングしてp型に制御したp型ZnTeクラッド層と、アンドープZnTe中間層と、アンドープZnCdTe活性層と、アンドープZnTe中間層と、Clをドーピングしてn型に制御したn型ZnTeクラッド層とを順に形成してなるZnTe系化合物半導体層の上に、Clをドーピングしてn型に制御したn型CdSeとn型ZnTeとが膜厚比を段階的に変えて積層されてなる超格子層を含むn型コンタクト層を有し、その上にClをドーピングしてn型に制御したn型CdSe層を形成して発光ダイオードの基体とすることを特徴とするII−VI族化合物半導体結晶。
- 前記超格子層は、一定の膜厚を有する前記ZnTe層と、膜厚を段階的に変化させた前記CdSe層とを交互に複数層ずつ積み重ねて形成されるものであることを特徴とする請求項1に記載したII−VI族化合物半導体結晶。
- 前記ZnTe層の一定の膜厚は1〜50nmの間で固定するものであり、
前記CdSe層の膜厚は前記ZnTe層の膜厚よりも薄い膜厚から前記ZnTeの膜厚に段階的に近づくように形成したものであることを特徴とする請求項2に記載したII−VI族化合物半導体結晶。
- 前記ZnTe層の一定の膜厚は2nmで固定し、
前記CdSe層の膜厚は0.3nmから1.7nmまで段階的に変化させて、
前記積み重ねる層の数は、交互に7層(計14層)であることを特徴とする請求項3に記載したII−VI族化合物半導体結晶。
- CdSe基板上にCdSeバッファ層と、Clをドーピングしてn型に制御したn型CdSeクラッド層と、アンドープCdSe中間層と、アンドープCdZnSe活性層と、アンドープCdSe中間層と、p型CdSeクラッド層とを順に形成してなるCdSe系化合物半導体層の上に、p型CdSeとプラズマ励起により活性化した窒素をドーピングしてp型に制御したp型ZnTeとが膜厚比を段階的に変えて積層されてなる超格子層を含むp型コンタクト層を有し、その上にプラズマ励起により活性化した窒素をドーピングしてp型に制御したp型ZnTe層を形成して発光ダイオードの基体とすることを特徴とするII−VI族化合物半導体結晶。
-
pn接合を有するZnTe系化合物半導体結晶の表面及び裏面にそれぞれ電極を設けてなる光電変換機能素子において、ZnTe基板上にZnTeバッファ層と、p型ZnTeクラッド層と、アンドープZnTe中間層と、アンドープZnCdTe活性層と、アンドープZnTe中間層と、n型ZnTeクラッド層とを順に形成してなるn型半導体層とn型電極との間にn型コンタクト層を有し、その上にClをドーピングしてn型に制御したn型CdSe層を形成して発光ダイオードの基体とするとともに、前記n型コンタクト層の少なくとも一部はn型CdSeとn型ZnTeとが積層されてなる超格子層で構成されていることを特徴とする光電変換機能素子。
-
pn接合を少なくとも有するCdSe系化合物半導体結晶の表面及び裏面にそれぞれ電極を設けてなる光電変換機能素子において、CdSe基板上にCdSeバッファ層と、Clをドーピングしてn型に制御したn型CdSeクラッド層と、アンドープCdSe中間層と、アンドープCdZnSe活性層と、アンドープCdSe中間層と、p型CdSeクラッド層とを順に形成してなるp型半導体層とp型電極との間にp型コンタクト層を有し、その上にプラズマ励起により活性化した窒素をドーピングしてp型に制御したp型ZnTe層を形成して発光ダイオードの基体とするとともに、前記p型コンタクト層の少なくとも一部はp型CdSeとプラズマ励起により活性化した窒素をドーピングしてp型に制御したp型ZnTeとが積層されてなる超格子層で構成されていることを特徴とする光電変換機能素子。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001244008A JP5236847B2 (ja) | 2001-08-10 | 2001-08-10 | Ii−vi族化合物半導体結晶および光電変換機能素子 |
TW091117327A TW552628B (en) | 2001-08-10 | 2002-08-01 | II-VI compound semiconductor crystal and electro-optic conversion functional element |
US10/381,880 US6933519B2 (en) | 2001-08-10 | 2002-08-02 | II-VI compound semiconductor crystal |
EP02755772.7A EP1416544B8 (en) | 2001-08-10 | 2002-08-02 | Ii-vi compound semiconductor crystal and photo-electric conversion function element |
PCT/JP2002/007890 WO2003017386A1 (en) | 2001-08-10 | 2002-08-02 | Ii-vi compound semiconductor crystal and photo-electric conversion function element |
US11/115,182 US7045871B2 (en) | 2001-08-10 | 2005-04-27 | II-VI compound semiconductor crystal and photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001244008A JP5236847B2 (ja) | 2001-08-10 | 2001-08-10 | Ii−vi族化合物半導体結晶および光電変換機能素子 |
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JP2003060235A JP2003060235A (ja) | 2003-02-28 |
JP5236847B2 true JP5236847B2 (ja) | 2013-07-17 |
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JP2001244008A Expired - Fee Related JP5236847B2 (ja) | 2001-08-10 | 2001-08-10 | Ii−vi族化合物半導体結晶および光電変換機能素子 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6933519B2 (ja) |
EP (1) | EP1416544B8 (ja) |
JP (1) | JP5236847B2 (ja) |
TW (1) | TW552628B (ja) |
WO (1) | WO2003017386A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100418237C (zh) * | 2004-09-23 | 2008-09-10 | 璨圆光电股份有限公司 | 氮化镓多重量子阱发光二极管的n型接触层结构 |
US7316746B2 (en) * | 2005-03-18 | 2008-01-08 | General Electric Company | Crystals for a semiconductor radiation detector and method for making the crystals |
KR100592395B1 (ko) | 2005-03-18 | 2006-06-22 | (주)에피플러스 | 알루미늄-갈륨-인듐-포스파이드 반도체 소자 |
CN102089856B (zh) * | 2008-05-12 | 2013-02-13 | 维拉诺瓦大学 | 太阳能电池以及太阳能电池的制造方法 |
US20110155208A1 (en) * | 2008-06-25 | 2011-06-30 | Michael Wang | Semiconductor heterojunction photovoltaic solar cell with a charge blocking layer |
EP2351094A2 (en) | 2008-07-17 | 2011-08-03 | Uriel Solar Inc. | High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
US8288255B2 (en) * | 2011-02-04 | 2012-10-16 | Varian Semiconductor Equipment Associates, Inc. | N-type doping of zinc telluride |
US8686430B2 (en) * | 2011-09-07 | 2014-04-01 | Toshiba Techno Center Inc. | Buffer layer for GaN-on-Si LED |
KR101993170B1 (ko) * | 2013-02-19 | 2019-06-27 | 삼성디스플레이 주식회사 | 유기발광 표시 장치 및 그 제조 방법 |
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US4695857A (en) * | 1983-06-24 | 1987-09-22 | Nec Corporation | Superlattice semiconductor having high carrier density |
JPH02125477A (ja) * | 1988-11-04 | 1990-05-14 | Oki Electric Ind Co Ltd | 可視光発光素子 |
US5274269A (en) * | 1991-05-15 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Ohmic contact for p-type group II-IV compound semiconductors |
US5396103A (en) * | 1991-05-15 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Graded composition ohmic contact for P-type II-VI semiconductors |
WO1993023882A1 (en) * | 1992-05-19 | 1993-11-25 | California Institute Of Technology | Wide band-gap semiconductor light emitters |
SG44654A1 (en) * | 1992-05-22 | 1997-12-19 | Minnesota Mining & Mfg | Ii-vi laser diodes with quantum wells growth by atomic layer epitaxy and migration enhanced epitaxy |
JPH0697598A (ja) * | 1992-09-14 | 1994-04-08 | Hitachi Ltd | 半導体発光装置 |
JP3318391B2 (ja) * | 1993-06-14 | 2002-08-26 | ローム株式会社 | 半導体発光装置 |
JP2661576B2 (ja) * | 1994-12-08 | 1997-10-08 | 日本電気株式会社 | 半導体発光素子 |
US5670798A (en) * | 1995-03-29 | 1997-09-23 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same |
JPH0997802A (ja) | 1995-09-29 | 1997-04-08 | Sony Corp | 半導体積層構造 |
JP3018976B2 (ja) * | 1995-12-28 | 2000-03-13 | 富士ゼロックス株式会社 | 半導体受光素子 |
US6031244A (en) * | 1996-12-09 | 2000-02-29 | Sony Corporation | Luminescent semiconductor device with antidiffusion layer on active layer surface |
JP4040135B2 (ja) * | 1997-03-24 | 2008-01-30 | Dowaホールディングス株式会社 | ZnSe系化合物半導体レーザの製造方法 |
US6178190B1 (en) * | 1997-08-04 | 2001-01-23 | Nec Corporation | II-VI compound semiconductor light emitting device |
JP4348488B2 (ja) | 1998-11-13 | 2009-10-21 | 住友電気工業株式会社 | 発光基板led素子 |
JP2001019599A (ja) | 1999-07-02 | 2001-01-23 | Sumitomo Electric Ind Ltd | ZnSe基板及びその製造方法、並びに発光素子 |
-
2001
- 2001-08-10 JP JP2001244008A patent/JP5236847B2/ja not_active Expired - Fee Related
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2002
- 2002-08-01 TW TW091117327A patent/TW552628B/zh not_active IP Right Cessation
- 2002-08-02 EP EP02755772.7A patent/EP1416544B8/en not_active Expired - Fee Related
- 2002-08-02 US US10/381,880 patent/US6933519B2/en not_active Expired - Lifetime
- 2002-08-02 WO PCT/JP2002/007890 patent/WO2003017386A1/ja active Application Filing
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2005
- 2005-04-27 US US11/115,182 patent/US7045871B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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US7045871B2 (en) | 2006-05-16 |
US20050189553A1 (en) | 2005-09-01 |
EP1416544A4 (en) | 2006-10-25 |
US6933519B2 (en) | 2005-08-23 |
JP2003060235A (ja) | 2003-02-28 |
TW552628B (en) | 2003-09-11 |
US20040012031A1 (en) | 2004-01-22 |
WO2003017386A1 (en) | 2003-02-27 |
EP1416544B1 (en) | 2014-11-19 |
EP1416544A1 (en) | 2004-05-06 |
EP1416544B8 (en) | 2014-12-31 |
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