JP5230357B2 - Deposition method and film forming apparatus for protective layer on transparent substrate - Google Patents

Deposition method and film forming apparatus for protective layer on transparent substrate Download PDF

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JP5230357B2
JP5230357B2 JP2008281681A JP2008281681A JP5230357B2 JP 5230357 B2 JP5230357 B2 JP 5230357B2 JP 2008281681 A JP2008281681 A JP 2008281681A JP 2008281681 A JP2008281681 A JP 2008281681A JP 5230357 B2 JP5230357 B2 JP 5230357B2
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protective layer
film forming
transparent substrate
deposition amount
amount control
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JP2010106344A (en
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史三 牛山
秀幸 小田木
昌司 久保
倉内  利春
典明 谷
寿弘 鈴木
寿文 三村
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Ulvac Inc
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Description

本発明は、情報端末の表示部等の透明基材への防護層の蒸着方法及び成膜装置に関する。   The present invention relates to a method for depositing a protective layer on a transparent substrate such as a display unit of an information terminal and a film forming apparatus.

近年、PDA、MIDや携帯電話等の携帯用情報端末が広く普及している。これら端末の液晶画面等の表示部は、タッチパネルの入力部として使用されたり、或いは、通話により、傷がついたりや汚れたりするため、これを防ぐためのフッ素系樹脂の防護層を成膜するようにしている(例えば、特許文献1参照)。
この防護層は、透明基材上に、無機材料により構成される密着層を成膜した後に成膜されるものであるが、複数の透明基材に対して連続して防護層を成膜する場合には、1つの成膜室で透明基材に対して無機材料の成膜を行った後、この透明基材を防護層を成膜するための他の室に搬送して防護層の蒸着を開始するまでに、或いは、1つの成膜室内で、透明基材に対して無機材料の成膜を行った後に同室内において防護層の蒸着を開始するまでに、時間がかかる。この間に防護層の蒸着量を制御するためのシャッターやバルブは冷えており、この状態で蒸着源を蒸発させると、蒸着源の溶媒又はシャッターやバルブに付着した物質が、防護層の材料とともに蒸発し、無機材料に付着して防護層の密着性を低下させたり、或いは、防護層中に不純物として混在することにより、所望の接触角や撥水性が得られないという問題があった。
また、この防護層は、携帯用情報端末等の表示部を構成する比較的小さな面積の透明基材の1枚1枚に対して成膜する必要があり、上記のような問題があると、効率的に膜質の優れた防護膜を成膜できないという問題があった。
In recent years, portable information terminals such as PDAs, MIDs, and mobile phones are widely used. The display part such as a liquid crystal screen of these terminals is used as an input part of a touch panel, or is damaged or soiled by a telephone call. Therefore, a protective layer of a fluororesin is formed to prevent this. (For example, refer to Patent Document 1).
This protective layer is formed after an adhesion layer made of an inorganic material is formed on a transparent substrate, and the protective layer is continuously formed on a plurality of transparent substrates. In some cases, after depositing an inorganic material on a transparent substrate in one deposition chamber, the transparent substrate is transported to another chamber for depositing the protective layer, and the protective layer is deposited. It takes time to start the deposition of the protective layer in the same chamber after depositing the inorganic material on the transparent substrate in one deposition chamber. During this time, the shutter and valve for controlling the deposition amount of the protective layer are cooled. When the deposition source is evaporated in this state, the solvent of the deposition source or the substance attached to the shutter or valve is evaporated together with the material of the protective layer. However, there is a problem that a desired contact angle and water repellency cannot be obtained by adhering to an inorganic material to reduce the adhesion of the protective layer, or by being mixed as an impurity in the protective layer.
In addition, this protective layer needs to be deposited on each of the transparent substrates having a relatively small area constituting the display unit of a portable information terminal or the like. There was a problem that a protective film with excellent film quality could not be formed efficiently.

特開2004−268311号公報Japanese Patent Laid-Open No. 2004-268311

そこで、本発明の目的は、複数の透明基材に対して、連続して蒸着が行われる防護層への不純物の混入を抑え、膜質の優れた防護層を提供することを目的とする。   Therefore, an object of the present invention is to provide a protective layer having excellent film quality by suppressing the mixing of impurities into the protective layer on which a plurality of transparent substrates are continuously deposited.

上記課題を解決するために、本発明者等は、鋭意検討の結果、透明基材に無機材料により構成される密着層を形成した後、フッ素系樹脂により構成される防護層を蒸着させるまでの間、防護層の蒸着量を制御するための蒸着量制御手段をフッ素系樹脂の沸点以上の温度まで加熱させることにより、蒸着量制御手段の温度が徐々に昇温することによる不純物の蒸発を防ぐことができ、防護層が蒸着する前に不純物が無機材料に付着したり、或いは、防護層に不純物が混入することがないという知見に基づき、下記の解決手段を見出した。   In order to solve the above-mentioned problems, the present inventors have conducted intensive studies, and after forming an adhesion layer composed of an inorganic material on a transparent base material, until the protective layer composed of a fluororesin is deposited. During this period, the evaporation amount control means for controlling the evaporation amount of the protective layer is heated to a temperature equal to or higher than the boiling point of the fluororesin, thereby preventing the evaporation of impurities due to the temperature of the evaporation amount control means gradually increasing. Based on the knowledge that impurities do not adhere to the inorganic material before the protective layer is deposited, or impurities are not mixed into the protective layer, the following solutions have been found.

即ち、本発明の透明基材への防護層の蒸着方法は、請求項1に記載の通り、成膜室内において、無機材料により構成される密着層を備えた透明基材に対してフッ素系樹脂により構成される防護層を蒸着するための方法であって、前記透明基材と前記蒸着源との間に前記防護層の蒸着量を制御するための蒸着量制御手段を設け、前記蒸着量制御手段は、前記蒸着源に対向する位置に設けられた開閉自在のシャッターであり、前記蒸着量制御手段を閉じた状態で前記蒸着量制御手段を前記フッ素系樹脂の沸点以上の温度まで加熱した後、前記蒸着量制御手段を開いた状態で前記防護層を蒸着する工程を複数の前記透明基材に対して繰り返し行い、複数の前記透明基材に連続して前記防護層を蒸着することを特徴とする。
また、請求項2に記載の本発明は、請求項1に記載の透明基材への防護層の蒸着方法において、前記密着層は、厚みが5〜150nmであることを特徴とする。
また、請求項3に記載の本発明は、請求項1又は2に記載の透明基材への防護層の蒸着方法において、前記密着層は、前記成膜室内で成膜されることを特徴とする。
また、請求項4に記載の本発明は、請求項1又は2に記載の透明基材への防護層の蒸着方法において、前記密着層は、前記成膜室外で成膜され、前記成膜室内に搬送された後、連続して防護層が蒸着されることを特徴とする。
また、本発明の成膜装置は、請求項5に記載の通り、成膜室内において、無機材料により構成される密着層を備えた透明基材に対してフッ素系樹脂により構成される防護層を蒸着するための成膜装置であって、前記透明基材が配置される位置と前記蒸着源が配置される位置との間に前記防護層の蒸着量を制御するための蒸着量制御手段を設け、前記蒸着量制御手段は、前記蒸着源に対向する位置に設けられた開閉自在のシャッターであり、前記蒸着量制御手段を閉じた状態で前記蒸着量制御手段を前記フッ素系樹脂の沸点以上の温度まで加熱するための加熱手段と、前記蒸着量制御手段を開いた状態で前記防護層を蒸着するための蒸着手段とを設けたことを特徴とする。
また、請求項6に記載の本発明は、請求項5に記載の成膜装置において、前記密着層は、厚みが5〜150nmであることを特徴とする。
また、請求項7に記載の本発明は、請求項5又は6に記載の成膜装置において、前記成膜室内に、前記密着層を成膜するための成膜手段を設けたことを特徴とする。
また、請求項8に記載の本発明は、請求項5又は6に記載の成膜装置において、前記密着層を成膜するための成膜手段を、前記成膜室外に設け、前記成膜室内に搬送するための搬送手段を設けたことを特徴とする
That is, the vapor deposition method of the protective layer on the transparent substrate of the present invention is a fluororesin for the transparent substrate provided with an adhesion layer made of an inorganic material in the film forming chamber. A method for depositing a protective layer comprising: a deposition amount control means for controlling a deposition amount of the protective layer between the transparent substrate and the deposition source, and controlling the deposition amount The means is a freely openable / closable shutter provided at a position facing the vapor deposition source, and after heating the vapor deposition amount control means to a temperature equal to or higher than the boiling point of the fluororesin with the vapor deposition amount control means closed. The step of vapor-depositing the protective layer with the vapor deposition amount control means opened is repeated for the plurality of transparent substrates, and the protective layer is vapor-deposited continuously on the plurality of transparent substrates. And
Moreover, this invention of Claim 2 is a vapor deposition method of the protective layer to the transparent base material of Claim 1, WHEREIN: The said contact | adherence layer is 5-150 nm in thickness, It is characterized by the above-mentioned.
The present invention described in claim 3 is characterized in that, in the method for depositing a protective layer on the transparent substrate according to claim 1 or 2 , the adhesion layer is formed in the film forming chamber. To do.
According to a fourth aspect of the present invention, there is provided the method for depositing a protective layer on the transparent substrate according to the first or second aspect , wherein the adhesion layer is formed outside the film formation chamber, A protective layer is continuously deposited after being transported to the substrate.
Further, the film formation apparatus of the present invention, as described in claim 5, in the film formation chamber, protective layer composed of a fluorine-based resin with respect to the transparent substrate having the adhesion layer composed of an inorganic material A film forming apparatus for vapor deposition, wherein a vapor deposition amount control means for controlling the vapor deposition amount of the protective layer is provided between a position where the transparent substrate is disposed and a position where the vapor deposition source is disposed. The vapor deposition amount control means is an openable / closable shutter provided at a position facing the vapor deposition source, and with the vapor deposition amount control means closed, the vapor deposition amount control means is not less than the boiling point of the fluororesin. A heating means for heating to a temperature and a vapor deposition means for vapor depositing the protective layer with the vapor deposition amount control means opened are provided.
The present invention according to claim 6 is the film forming apparatus according to claim 5, wherein the adhesion layer has a thickness of 5 to 150 nm.
The present invention described in claim 7 is characterized in that, in the film forming apparatus according to claim 5 or 6 , a film forming means for forming the adhesion layer is provided in the film forming chamber. To do.
Further, the present invention according to claim 8 is the film forming apparatus according to claim 5 or 6 , wherein a film forming means for forming the adhesion layer is provided outside the film forming chamber, It is characterized in that a conveying means for conveying is provided .

本発明によれば、連続して透明基材上に蒸着される防護層への不純物の混入を抑え、優れた特性の防護層を得ることができる。   ADVANTAGE OF THE INVENTION According to this invention, mixing of the impurity to the protective layer vapor-deposited on a transparent base material continuously can be suppressed, and the protective layer of the outstanding characteristic can be obtained.

次に、本発明の一実施の形態について図面を用いて説明する。
図1は、本発明の一実施の形態を説明するための装置の概略図を示すものであり、成膜室1内の上方には、図示しないが基材保持部により、透明基材2が保持されている。前記透明基材2と対向する位置には、密着層を成膜するための成膜手段の蒸着源3と防護層を成膜するための成膜手段の蒸着源4が配置されている。そして、透明基材2と、蒸着源3,4との間には、蒸着源3,4からの蒸着量を制御するための蒸着量制御手段であるシャッターが設けられている。図示されるようにシャッターは、円盤状のシャッター板5aを、成膜室1の内壁に固定された回転軸5bを中心として回転自在の支持棒5cに支持することにより構成され、シャッター板5aは、透明基板2と蒸着源3,4とにほぼ平行な面において回転自在となる。尚、シャッター板5aは、図示しないが加熱手段として、抵抗加熱装置により、フッ素系樹脂の沸点以上の温度に加熱できるようになっている。
Next, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 shows a schematic view of an apparatus for explaining an embodiment of the present invention, and a transparent substrate 2 is formed above a film forming chamber 1 by a substrate holding portion (not shown). Is retained. At a position facing the transparent substrate 2, a vapor deposition source 3 for film formation means for forming an adhesion layer and a vapor deposition source 4 for film formation means for forming a protective layer are disposed. And between the transparent base material 2 and the vapor deposition sources 3 and 4, the shutter which is a vapor deposition amount control means for controlling the vapor deposition amount from the vapor deposition sources 3 and 4 is provided. As shown in the figure, the shutter is configured by supporting a disc-shaped shutter plate 5a on a support rod 5c that is rotatable about a rotation shaft 5b fixed to the inner wall of the film forming chamber 1, and the shutter plate 5a The transparent substrate 2 and the vapor deposition sources 3 and 4 are rotatable in a plane substantially parallel to the transparent substrate 2 and the evaporation sources 3 and 4. Although not shown, the shutter plate 5a can be heated to a temperature equal to or higher than the boiling point of the fluororesin by a resistance heating device as a heating means.

上記装置構成において、成膜室1内に透明基板2を配置し、シャッター板5aを開いた状態で、密着層用の蒸着源3により、透明基板1上に無機材料を蒸着する。次に、シャッター板5aを閉じた状態で、防護層用の蒸着源4から蒸発を開始し、シャッター板5aを加熱する。その後、シャッター板5aを開き、透明基材1に積層された密着層上に、防護層を成膜する。   In the above apparatus configuration, an inorganic material is deposited on the transparent substrate 1 by the deposition source 3 for the adhesion layer while the transparent substrate 2 is disposed in the film forming chamber 1 and the shutter plate 5a is opened. Next, with the shutter plate 5a closed, evaporation is started from the vapor deposition source 4 for the protective layer, and the shutter plate 5a is heated. Thereafter, the shutter plate 5 a is opened, and a protective layer is formed on the adhesion layer laminated on the transparent substrate 1.

上記の方法により防護層を成膜すれば、防護層の蒸着前に、シャッター板5aは加熱されているので、防護層用の蒸着源に含まれる溶媒等の不純物が、防護層に混入することがなく、該膜質を向上させることができる。   If the protective layer is formed by the above method, since the shutter plate 5a is heated before the protective layer is deposited, impurities such as a solvent contained in the protective layer deposition source are mixed into the protective layer. The film quality can be improved.

次に、図2を参照して他の実施の形態について説明する。
図示されたものでは、バルブ8を介して蒸着源(図示せず)からの蒸着材料が成膜室1内に導入され、成膜室1内のバルブ8と透明基材1との間の空間を囲繞する防着板6が設けられ、この防着板6で囲まれた空間を遮るようにして移動自在に構成されたシャッター板7が設けられている。また、図示しないが、本例の場合、防着板6及びシャッター板7は、加熱手段として、抵抗加熱装置により、フッ素系樹脂の沸点以上の温度に加熱できるようになっている。
Next, another embodiment will be described with reference to FIG.
In the illustrated example, a vapor deposition material from a vapor deposition source (not shown) is introduced into the film forming chamber 1 through a valve 8, and a space between the valve 8 in the film forming chamber 1 and the transparent substrate 1. A shutter plate 7 is provided, which is configured so as to be movable so as to block a space surrounded by the shield plate 6. Although not shown, in the case of this example, the deposition preventing plate 6 and the shutter plate 7 can be heated to a temperature equal to or higher than the boiling point of the fluororesin by a resistance heating device as a heating means.

図示した装置の場合には、成膜室1外で無機材料を透明基材1上に積層しておき、その後、成膜室1上方に設けられた基板保持部に保持し、シャッター板7を閉じた状態で、シャッター板及び防着板6を加熱し、その後、シャッター板7を開いて、防護層を蒸着する。
このように、本発明においては、図1で説明した場合のように防護層と密着層を同じ成膜室1内で成膜する場合以外にも、別の場所で密着層を成膜する場合にも、密着層の成膜からの時間がかかるため有効に機能する。尚、別の場所で密着層を成膜する方法としては、成膜室1に隣接して、密着層の成膜手段を備えた他の成膜室を配置し、これらを公知の基板搬送手段により搬送することにより行うことができる。
図示した例では、蒸着量制御手段であるシャッター板7以外にも、蒸発源からの蒸発材料の成膜室1の内壁への付着を防ぐために設けられた防着板6も加熱することにより、防着板6に付着した材料が蒸発することなく防護層への不純物の混入を防ぐことができる。
加熱手段については、上記した抵抗加熱に限定されず、例えば、EB(電子ビーム)加熱、ランプ加熱等により加熱を行ってもよい。
In the case of the illustrated apparatus, an inorganic material is laminated on the transparent base material 1 outside the film forming chamber 1, and then held on a substrate holding unit provided above the film forming chamber 1, and the shutter plate 7 is attached. In the closed state, the shutter plate and the deposition preventing plate 6 are heated, and then the shutter plate 7 is opened to deposit a protective layer.
As described above, in the present invention, in addition to the case where the protective layer and the adhesion layer are formed in the same film formation chamber 1 as described in FIG. 1, the adhesion layer is formed in another place. In addition, since it takes time from the formation of the adhesion layer, it functions effectively. As another method for forming the adhesion layer in another place, another film forming chamber provided with a film forming means for the adhesion layer is arranged adjacent to the film forming chamber 1, and these are known substrate transfer means. It can be carried out by carrying.
In the illustrated example, in addition to the shutter plate 7 which is a deposition amount control means, the deposition plate 6 provided for preventing the evaporation material from the evaporation source from adhering to the inner wall of the film forming chamber 1 is also heated. It is possible to prevent impurities from entering the protective layer without evaporating the material attached to the deposition preventing plate 6.
The heating means is not limited to the resistance heating described above, and for example, heating may be performed by EB (electron beam) heating, lamp heating, or the like.

本発明において防護層を構成するフッ素系樹脂とは、高分子主鎖末端にケイ素原子を有するものであり、高分子主鎖末端に位置するケイ素原子には、アルコキシ基が酸素−ケイ素結合により付加されていることが好ましい。高分子主鎖が、例えば、CF=,−CF−,−CFH−等の繰り返し単位を有するものであってもよい。また、防護層の膜厚としては、特に制限するものではないが、0.0005〜5μmの範囲で適宜設定することができる。0.0005μm未満であると、充分な汚れ付着防止機能を発現することが困難となり、また、5μmを超えると、光透過率の低下等が生じるからである。
この防護層の蒸着の条件については、特に制限はないが、雰囲気圧力を1×10−2Pa程度として、蒸着源に合わせて加熱すればよい。
In the present invention, the fluororesin constituting the protective layer has a silicon atom at the polymer main chain terminal, and an alkoxy group is added to the silicon atom located at the polymer main chain terminal by an oxygen-silicon bond. It is preferable that The polymer main chain may have a repeating unit such as CF 2 =, -CF 2- , -CFH-. Further, the thickness of the protective layer is not particularly limited, but can be appropriately set within a range of 0.0005 to 5 μm. This is because if it is less than 0.0005 μm, it will be difficult to exhibit a sufficient dirt adhesion preventing function, and if it exceeds 5 μm, the light transmittance will be lowered.
Although there is no restriction | limiting in particular about the conditions of vapor deposition of this protective layer, What is necessary is just to heat according to a vapor deposition source by making atmospheric pressure into about 1 * 10 <-2 > Pa.

また、密着層は、無機材料により構成されるものであるが、材質としては、酸化ケイ素、窒化ケイ素、窒化酸化ケイ素、炭化ケイ素、炭化酸化ケイ素、酸化アルミニウム、窒化アルミニウム、窒化酸化アルミニウム、酸化チタン、酸化マグネシウム、酸化インジウム、酸化スズ、酸化亜鉛等を挙げることができ、これらの1種を単独で、或いは、これらを任意に混合して使用することができる。この中でも、酸化ケイ素、窒化ケイ素、窒化酸化ケイ素、炭化ケイ素、炭化酸化ケイ素を使用することが好ましい。尚、後述するように、透明基材を無機材料により構成すれば、特に密着層を設ける必要がない。また、成膜により密着層を形成する場合のその方法については特に制限するものではないが、図1の変形例を示す図3のように、酸化ケイ素をスパッタ源9とするスパッタリング法、CVD(化学気相蒸着)法、プラズマCVD法、物理蒸着法、イオンプレーティング法等により形成することができる。密着層の厚みは1〜1000nm、好ましくは5〜150nmの範囲で適宜設定することができる。無機材料層の厚みが上記の範囲未満であると、撥水性樹脂層との高い密着性を発現することができず、また、無機材料層の厚みが上記の範囲を超えると、逆に応力等によるクラックが生じ易くなるとともに、成膜に要する時間が長くなり好ましくない。   The adhesion layer is composed of an inorganic material. The material is silicon oxide, silicon nitride, silicon nitride oxide, silicon carbide, silicon carbide oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, titanium oxide. , Magnesium oxide, indium oxide, tin oxide, zinc oxide, and the like. One of these may be used alone, or any of these may be used in combination. Among these, it is preferable to use silicon oxide, silicon nitride, silicon nitride oxide, silicon carbide, and silicon carbide oxide. As will be described later, if the transparent substrate is made of an inorganic material, it is not necessary to provide an adhesion layer. In addition, the method for forming the adhesion layer by film formation is not particularly limited, but as shown in FIG. 3 showing a modification of FIG. It can be formed by a chemical vapor deposition method, a plasma CVD method, a physical vapor deposition method, an ion plating method, or the like. The thickness of the adhesion layer can be appropriately set in the range of 1 to 1000 nm, preferably 5 to 150 nm. If the thickness of the inorganic material layer is less than the above range, high adhesion to the water-repellent resin layer cannot be expressed, and if the thickness of the inorganic material layer exceeds the above range, conversely, stress or the like This is not preferable because cracks due to the film are liable to occur and the time required for film formation becomes long.

また、本発明において使用される透明基材は、半透明のものも含まれ、密着層を備え、その上に防護層を形成することができるものであれば特に制限はなく、例えば、ガラス等を使用することができる。また、使用される透明基材の材質によっては、表面が密着層となる無機材料で構成される場合もあり、この場合は、密着層を成膜しなくとも高い密着性を発現できる場合がある。   In addition, the transparent substrate used in the present invention includes a semi-transparent material, and is not particularly limited as long as it has an adhesion layer and can form a protective layer thereon. For example, glass or the like Can be used. Depending on the material of the transparent substrate used, the surface may be composed of an inorganic material that forms an adhesion layer. In this case, high adhesion may be achieved without forming an adhesion layer. .

本発明の一実施の形態を説明するための装置の概略図Schematic of an apparatus for explaining an embodiment of the present invention 本発明の他の実施の形態を説明するための装置の概略図Schematic of an apparatus for explaining another embodiment of the present invention 図1の装置の変形例の装置の概略図FIG. 1 is a schematic view of a modified example of the apparatus of FIG.

符号の説明Explanation of symbols

1 成膜室
2 透明基材
3 蒸着源
4 蒸着源
5 シャッター(蒸着量制御手段)
6 防着板
7 シャッター板
8 バルブ
DESCRIPTION OF SYMBOLS 1 Deposition chamber 2 Transparent base material 3 Deposition source 4 Deposition source 5 Shutter (deposition amount control means)
6 Protection plate 7 Shutter plate 8 Valve

Claims (8)

成膜室内において、無機材料により構成される密着層を備えた透明基材に対してフッ素系樹脂により構成される防護層を蒸着するための方法であって、
前記透明基材と前記蒸着源との間に前記防護層の蒸着量を制御するための蒸着量制御手段を設け、前記蒸着量制御手段は、前記蒸着源に対向する位置に設けられた開閉自在のシャッターであり、
前記蒸着量制御手段を閉じた状態で前記蒸着量制御手段を前記フッ素系樹脂の沸点以上の温度まで加熱した後、前記蒸着量制御手段を開いた状態で前記防護層を蒸着する工程を複数の前記透明基材に対して繰り返し行い、複数の前記透明基材に連続して前記防護層を蒸着することを特徴とする透明基材への防護層の蒸着方法。
In a film forming chamber, a method for depositing a protective layer composed of a fluorine-based resin on a transparent substrate having an adhesion layer composed of an inorganic material,
A deposition amount control means for controlling the deposition amount of the protective layer is provided between the transparent substrate and the deposition source, and the deposition amount control means is openable and closable provided at a position facing the deposition source. Shutter
A plurality of steps of depositing the protective layer in a state where the vapor deposition amount control means is opened after the vapor deposition amount control means is heated to a temperature equal to or higher than the boiling point of the fluororesin while the vapor deposition amount control means is closed; A method for vapor-depositing a protective layer on a transparent substrate, wherein the method is repeatedly performed on the transparent substrate, and the protective layer is vapor-deposited continuously on a plurality of the transparent substrates.
前記密着層は、厚みが5〜150nmであることを特徴とする請求項1記載の透明基材への防護層の蒸着方法。2. The method for depositing a protective layer on a transparent substrate according to claim 1, wherein the adhesion layer has a thickness of 5 to 150 nm. 前記密着層は、前記成膜室内で成膜されることを特徴とする請求項1又は2に記載の透明基材への防護層の蒸着方法。 The method for depositing a protective layer on a transparent substrate according to claim 1 , wherein the adhesion layer is formed in the film formation chamber. 前記密着層は、前記成膜室外で成膜され、前記成膜室内に搬送された後、連続して防護層が蒸着されることを特徴とする請求項1又は2に記載の透明基材への防護層の蒸着方法。 3. The transparent substrate according to claim 1 , wherein the adhesion layer is formed outside the film formation chamber, and after being transferred into the film formation chamber, a protective layer is continuously deposited thereon. Method of depositing protective layer. 成膜室内において、無機材料により構成される密着層を備えた透明基材に対してフッ素系樹脂により構成される防護層を蒸着するための成膜装置であって、
前記透明基材が配置される位置と前記蒸着源が配置される位置との間に前記防護層の蒸着量を制御するための蒸着量制御手段を設け、前記蒸着量制御手段は、前記蒸着源に対向する位置に設けられた開閉自在のシャッターであり、
前記蒸着量制御手段を閉じた状態で前記蒸着量制御手段を前記フッ素系樹脂の沸点以上の温度まで加熱するための加熱手段と、
前記蒸着量制御手段を開いた状態で前記防護層を蒸着するための蒸着手段とを設けたことを特徴とする成膜装置。
A film forming apparatus for depositing a protective layer made of a fluorine-based resin on a transparent substrate having an adhesion layer made of an inorganic material in a film forming chamber,
A deposition amount control means for controlling the deposition amount of the protective layer is provided between the position where the transparent substrate is disposed and the position where the deposition source is disposed, and the deposition amount control means includes the deposition source. Is an openable and closable shutter provided at a position opposite to
Heating means for heating the vapor deposition amount control means to a temperature equal to or higher than the boiling point of the fluororesin with the vapor deposition amount control means closed;
A film forming apparatus comprising: a vapor deposition unit for depositing the protective layer in a state where the vapor deposition amount control unit is opened .
前記密着層は、厚みが5〜150nmであることを特徴とする請求項5記載の成膜装置。The film forming apparatus according to claim 5, wherein the adhesion layer has a thickness of 5 to 150 nm. 前記成膜室内に、前記密着層を成膜するための成膜手段を設けたことを特徴とする請求項5又は6に記載の成膜装置。 The film forming apparatus according to claim 5 , wherein a film forming unit for forming the adhesion layer is provided in the film forming chamber. 前記密着層を成膜するための成膜手段を、前記成膜室外に設け、前記成膜室内に搬送するための搬送手段を設けたことを特徴とする請求項5又は6に成膜装置。 The film forming apparatus according to claim 5 , wherein a film forming unit for forming the adhesion layer is provided outside the film forming chamber, and a transfer unit for transferring the film into the film forming chamber is provided.
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