JP5221166B2 - ZnO系半導体素子とその製造方法及び光半導体素子 - Google Patents
ZnO系半導体素子とその製造方法及び光半導体素子 Download PDFInfo
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Description
2 緩衝層
3 n型ZnO系半導体層
4 発光層
5 p型ZnO系半導体層
10 n側電極
11 p側電極
12 p側電極パッド
22 保護層
20 第1層目の保護層
20a Zn−Si−O層
21 第2層目の保護層
23 輪郭溝
61 pn接合分離溝
71 埋め込み保護部材
Claims (9)
- 第1の導電型を有するZnO系半導体からなる第1の半導体層、及び、前記第1の半導体層の上方に形成され、該第1の半導体層とpn接合を形成し、前記第1の導電型と反対の第2の導電型を有するZnO系半導体からなる第2の半導体層を含む積層構造と、
前記積層構造の前記pn接合が露出する表面を覆い、Zn、Si、及びOの化合物を含むZn−Si−O層と
を有し、
前記Zn−Si−O層の厚さは、2nm〜20nmの範囲であり、
さらに、前記Zn−Si−O層の上に形成されたSiO 2 層を有するZnO系半導体素子。 - 前記SiO2層の厚さは、30nm〜300nmの範囲である請求項1に記載のZnO系半導体素子。
- 前記積層構造の表面から前記pn接合を横切る深さで形成された溝を有し、該溝の内面を前記Zn−Si−O層が覆う請求項1または2に記載のZnO系半導体素子。
- さらに、前記溝を埋め込み、前記Zn−Si−O層の上方に形成された保護部材を有する請求項3に記載のZnO系半導体素子。
- (a)第1の導電型を有するZnO系半導体からなる第1の半導体層、及び、前記第1の半導体層の上方に形成され、該第1の半導体層とpn接合を形成し、前記第1の導電型と反対の第2の導電型を有するZnO系半導体からなる第2の半導体層を含むZnO系半導体ウエハを準備する工程と、
(b)前記ZnO系半導体ウエハに、前記pn接合を横切る深さの溝を形成する工程と、
(c)前記溝の側面に露出した前記pn接合を覆い、Zn、Si、及びOの化合物を含むZn−Si−O層を形成する工程と
を有し、
前記工程(c)は、前記溝の側面上にSiO 2 を、下地のZnO系半導体と反応して前記Zn−Si−O層が生成するように堆積させるZnO系半導体素子の製造方法。 - 前記工程(c)でSiO2を堆積させた後に、アニールを行う請求項5に記載のZnO系半導体素子の製造方法。
- さらに、(d)前記Zn−Si−O層上にSiO2層を形成する工程を有する請求項5または6に記載のZnO系半導体素子の製造方法。
- 第1の導電型を有するZnO系半導体からなる第1の半導体層及び前記第1の導電型と反対の第2の導電型を有するZnO系半導体からなる第2の半導体層の形成する接合が表面に露出した半導体部材と、
前記半導体部材の前記接合が露出した表面を覆い、Zn、Si、及びOの化合物を含むZn−Si−O層と
を有し、
前記Zn−Si−O層の厚さは、2nm〜20nmの範囲であり、
さらに、前記Zn−Si−O層の上に形成されたSiO 2 層を有するZnO系半導体素子。 - 第1の導電型を有するZnO系半導体からなる第1の半導体層、及び、前記第1の半導体層の上方に形成され、前記第1の導電型と反対の第2の導電型を有するZnO系半導体からなる第2の半導体層を含む積層構造と、
前記積層構造の前記第1の半導体層の側面の少なくとも一部と、前記第2の半導体層の側面の少なくとも一部との間を連続的に覆う、Zn、Si、及びOの化合物を含むZn−Si−O層と
を有し、
前記Zn−Si−O層の厚さは、2nm〜20nmの範囲であり、
さらに、前記Zn−Si−O層の上に形成されたSiO 2 層を有する光半導体素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008038669A JP5221166B2 (ja) | 2008-02-20 | 2008-02-20 | ZnO系半導体素子とその製造方法及び光半導体素子 |
US12/371,965 US8143618B2 (en) | 2008-02-20 | 2009-02-17 | ZnO based semiconductor device and its manufacture method |
EP09002471.2A EP2093810B1 (en) | 2008-02-20 | 2009-02-20 | ZnO based semiconductor device and its manufacture method |
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JP2012060061A (ja) * | 2010-09-13 | 2012-03-22 | Stanley Electric Co Ltd | 半導体発光装置の製造方法及び半導体発光装置 |
TW201244056A (en) * | 2011-04-20 | 2012-11-01 | Lm Opto Co Ltd | Light emitting diode module package structure |
FR3011383B1 (fr) * | 2013-09-30 | 2017-05-26 | Commissariat Energie Atomique | Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes |
JP7011163B2 (ja) | 2018-02-22 | 2022-02-10 | 日亜化学工業株式会社 | 半導体素子の製造方法 |
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US6841802B2 (en) * | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
JP4185784B2 (ja) * | 2003-02-17 | 2008-11-26 | シャープ株式会社 | 酸化物半導体発光素子およびその製造方法ならびに酸化物半導体発光素子を用いた半導体発光装置 |
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US7122827B2 (en) * | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
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EP2093810A3 (en) | 2013-10-16 |
US8143618B2 (en) | 2012-03-27 |
US20090206333A1 (en) | 2009-08-20 |
EP2093810B1 (en) | 2016-05-04 |
JP2009200150A (ja) | 2009-09-03 |
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