JP5219200B2 - フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 - Google Patents

フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 Download PDF

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Publication number: JP5219200B2
Authority: JP; Japan
Prior art keywords: film; light; semi; photomask; transparent
Prior art date: 2008-07-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2008197960A

Other languages

English (en)

Japanese (ja)

Other versions

JP2010038930A (ja

Inventor

道明佐野

勝三井

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hoya Corp

Original Assignee

Hoya Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-07-31

Filing date

2008-07-31

Publication date

2013-06-26

2008-07-31 Application filed by Hoya Corp filed Critical Hoya Corp

2008-07-31 Priority to JP2008197960A priority Critical patent/JP5219200B2/ja

2009-07-30 Priority to KR1020090069892A priority patent/KR101321188B1/ko

2010-02-18 Publication of JP2010038930A publication Critical patent/JP2010038930A/ja

2013-06-26 Application granted granted Critical

2013-06-26 Publication of JP5219200B2 publication Critical patent/JP5219200B2/ja

Status Active legal-status Critical Current

2028-07-31 Anticipated expiration legal-status Critical

Links

238000004519 manufacturing process Methods 0.000 title claims description 39
238000000034 method Methods 0.000 title claims description 27
238000012546 transfer Methods 0.000 title claims description 12
239000010408 film Substances 0.000 claims description 313
239000000758 substrate Substances 0.000 claims description 43
229910016006 MoSi Inorganic materials 0.000 claims description 24
150000001875 compounds Chemical class 0.000 claims description 23
239000000463 material Substances 0.000 claims description 22
238000001039 wet etching Methods 0.000 claims description 19
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
150000004767 nitrides Chemical class 0.000 claims description 14
238000000059 patterning Methods 0.000 claims description 14
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
229910052760 oxygen Inorganic materials 0.000 claims description 13
239000001301 oxygen Substances 0.000 claims description 13
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
229910052799 carbon Inorganic materials 0.000 claims description 10
229910052757 nitrogen Inorganic materials 0.000 claims description 10
229910044991 metal oxide Inorganic materials 0.000 claims description 8
150000004706 metal oxides Chemical class 0.000 claims description 8
239000010409 thin film Substances 0.000 claims description 8
150000001247 metal acetylides Chemical class 0.000 claims description 5
-1 oxynitrides Chemical class 0.000 claims description 3
239000011651 chromium Substances 0.000 description 60
238000005530 etching Methods 0.000 description 59
239000010410 layer Substances 0.000 description 29
239000012811 non-conductive material Substances 0.000 description 23
230000000694 effects Effects 0.000 description 17
229910052710 silicon Inorganic materials 0.000 description 16
230000002411 adverse Effects 0.000 description 14
239000000243 solution Substances 0.000 description 14
229910052804 chromium Inorganic materials 0.000 description 11
XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 10
230000008569 process Effects 0.000 description 10
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
239000007789 gas Substances 0.000 description 9
239000010703 silicon Substances 0.000 description 9
238000004544 sputter deposition Methods 0.000 description 9
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
229910052751 metal Inorganic materials 0.000 description 8
239000002184 metal Substances 0.000 description 8
238000002834 transmittance Methods 0.000 description 8
229910052782 aluminium Inorganic materials 0.000 description 7
229910052750 molybdenum Inorganic materials 0.000 description 7
229910052721 tungsten Inorganic materials 0.000 description 7
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
230000000052 comparative effect Effects 0.000 description 6
VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 6
239000010453 quartz Substances 0.000 description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
230000005856 abnormality Effects 0.000 description 5
238000004380 ashing Methods 0.000 description 5
238000010894 electron beam technology Methods 0.000 description 5
239000000203 mixture Substances 0.000 description 5
238000007254 oxidation reaction Methods 0.000 description 5
239000002253 acid Substances 0.000 description 4
230000004075 alteration Effects 0.000 description 3
LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
239000011521 glass Substances 0.000 description 3
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
229910052753 mercury Inorganic materials 0.000 description 3
239000000126 substance Substances 0.000 description 3
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000011161 development Methods 0.000 description 2
238000001312 dry etching Methods 0.000 description 2
239000008151 electrolyte solution Substances 0.000 description 2
238000011156 evaluation Methods 0.000 description 2
238000002474 experimental method Methods 0.000 description 2
150000002222 fluorine compounds Chemical class 0.000 description 2
238000010030 laminating Methods 0.000 description 2
239000011733 molybdenum Substances 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
238000009751 slip forming Methods 0.000 description 2
RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
230000001133 acceleration Effects 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000003111 delayed effect Effects 0.000 description 1
230000009931 harmful effect Effects 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000007800 oxidant agent Substances 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000012827 research and development Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
150000003839 salts Chemical class 0.000 description 1
238000004904 shortening Methods 0.000 description 1
239000002356 single layer Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
229910052723 transition metal Inorganic materials 0.000 description 1
150000003624 transition metals Chemical class 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
229910052726 zirconium Inorganic materials 0.000 description 1

Images

Classifications

- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Preparing Plates And Mask In Photomechanical Process (AREA)
Liquid Crystal (AREA)

JP2008197960A 2008-07-31 2008-07-31 フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 Active JP5219200B2 (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP2008197960A JP5219200B2 (ja)	2008-07-31	2008-07-31	フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法
KR1020090069892A KR101321188B1 (ko)	2008-07-31	2009-07-30	포토마스크, 포토마스크용 블랭크, 포토마스크의 제조 방법, 및 패턴 전사 방법

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2008197960A JP5219200B2 (ja)	2008-07-31	2008-07-31	フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法

Publications (2)

Publication Number	Publication Date
JP2010038930A JP2010038930A (ja)	2010-02-18
JP5219200B2 true JP5219200B2 (ja)	2013-06-26

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ID=42011601

Family Applications (1)

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JP2008197960A Active JP5219200B2 (ja)	2008-07-31	2008-07-31	フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法

Country Status (2)

Country	Link
JP (1)	JP5219200B2 (ko)
KR (1)	KR101321188B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP7062381B2 (ja) *	2017-06-23	2022-05-16	アルバック成膜株式会社	マスクブランクスおよびその製造方法、バイナリマスク

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0511431A (ja) *	1991-07-01	1993-01-22	Nippon Telegr & Teleph Corp <Ntt>	マスク用基板
JP3093832B2 (ja) *	1991-09-02	2000-10-03	ホーヤ株式会社	位相シフトマスク及びその製造方法
JPH08137089A (ja) *	1994-11-07	1996-05-31	Toppan Printing Co Ltd	ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスクの製造方法
JP3250973B2 (ja) *	1997-06-27	2002-01-28	ホーヤ株式会社	ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
KR100812253B1 (ko) *	2006-01-20	2008-03-10	주식회사 에스앤에스텍	그레이톤 포토마스크의 제조방법, 그레이톤 포토마스크 및그레이톤 블랭크마스크
JP2007256922A (ja) *	2006-02-22	2007-10-04	Hoya Corp	パターン形成方法、グレートーンマスクの製造方法、及びパターンの転写方法
JP5433925B2 (ja) *	2006-02-23	2014-03-05	大日本印刷株式会社	マスクブランクおよび階調マスク
JP4919259B2 (ja) *	2006-03-30	2012-04-18	Ｈｏｙａ株式会社	マスクブランク及びフォトマスク
KR100849849B1 (ko) *	2006-06-30	2008-08-01	주식회사 에스앤에스텍	평탄 투과율 그레이톤 블랭크마스크 및 이를 이용한포토마스크

2008
- 2008-07-31 JP JP2008197960A patent/JP5219200B2/ja active Active
2009
- 2009-07-30 KR KR1020090069892A patent/KR101321188B1/ko active IP Right Grant

Also Published As

Publication number	Publication date
KR20100014154A (ko)	2010-02-10
KR101321188B1 (ko)	2013-10-23
JP2010038930A (ja)	2010-02-18

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