JP5219200B2 - フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 - Google Patents
フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 Download PDFInfo
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- JP5219200B2 JP5219200B2 JP2008197960A JP2008197960A JP5219200B2 JP 5219200 B2 JP5219200 B2 JP 5219200B2 JP 2008197960 A JP2008197960 A JP 2008197960A JP 2008197960 A JP2008197960 A JP 2008197960A JP 5219200 B2 JP5219200 B2 JP 5219200B2
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- film
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- photomask
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- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 27
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- 239000010408 film Substances 0.000 claims description 313
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- 229910016006 MoSi Inorganic materials 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 23
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- 238000001039 wet etching Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 150000001247 metal acetylides Chemical class 0.000 claims description 5
- -1 oxynitrides Chemical class 0.000 claims description 3
- 239000011651 chromium Substances 0.000 description 60
- 238000005530 etching Methods 0.000 description 59
- 239000010410 layer Substances 0.000 description 29
- 239000012811 non-conductive material Substances 0.000 description 23
- 230000000694 effects Effects 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 16
- 230000002411 adverse Effects 0.000 description 14
- 239000000243 solution Substances 0.000 description 14
- 229910052804 chromium Inorganic materials 0.000 description 11
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Liquid Crystal (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008197960A JP5219200B2 (ja) | 2008-07-31 | 2008-07-31 | フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 |
KR1020090069892A KR101321188B1 (ko) | 2008-07-31 | 2009-07-30 | 포토마스크, 포토마스크용 블랭크, 포토마스크의 제조 방법, 및 패턴 전사 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008197960A JP5219200B2 (ja) | 2008-07-31 | 2008-07-31 | フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010038930A JP2010038930A (ja) | 2010-02-18 |
JP5219200B2 true JP5219200B2 (ja) | 2013-06-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008197960A Active JP5219200B2 (ja) | 2008-07-31 | 2008-07-31 | フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5219200B2 (ko) |
KR (1) | KR101321188B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7062381B2 (ja) * | 2017-06-23 | 2022-05-16 | アルバック成膜株式会社 | マスクブランクスおよびその製造方法、バイナリマスク |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0511431A (ja) * | 1991-07-01 | 1993-01-22 | Nippon Telegr & Teleph Corp <Ntt> | マスク用基板 |
JP3093832B2 (ja) * | 1991-09-02 | 2000-10-03 | ホーヤ株式会社 | 位相シフトマスク及びその製造方法 |
JPH08137089A (ja) * | 1994-11-07 | 1996-05-31 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク、ハーフトーン型位相シフトマスク用ブランク及びハーフトーン型位相シフトマスクの製造方法 |
JP3250973B2 (ja) * | 1997-06-27 | 2002-01-28 | ホーヤ株式会社 | ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク |
KR100812253B1 (ko) * | 2006-01-20 | 2008-03-10 | 주식회사 에스앤에스텍 | 그레이톤 포토마스크의 제조방법, 그레이톤 포토마스크 및그레이톤 블랭크마스크 |
JP2007256922A (ja) * | 2006-02-22 | 2007-10-04 | Hoya Corp | パターン形成方法、グレートーンマスクの製造方法、及びパターンの転写方法 |
JP5433925B2 (ja) * | 2006-02-23 | 2014-03-05 | 大日本印刷株式会社 | マスクブランクおよび階調マスク |
JP4919259B2 (ja) * | 2006-03-30 | 2012-04-18 | Hoya株式会社 | マスクブランク及びフォトマスク |
KR100849849B1 (ko) * | 2006-06-30 | 2008-08-01 | 주식회사 에스앤에스텍 | 평탄 투과율 그레이톤 블랭크마스크 및 이를 이용한포토마스크 |
-
2008
- 2008-07-31 JP JP2008197960A patent/JP5219200B2/ja active Active
-
2009
- 2009-07-30 KR KR1020090069892A patent/KR101321188B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20100014154A (ko) | 2010-02-10 |
KR101321188B1 (ko) | 2013-10-23 |
JP2010038930A (ja) | 2010-02-18 |
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