JP5213919B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP5213919B2
JP5213919B2 JP2010138068A JP2010138068A JP5213919B2 JP 5213919 B2 JP5213919 B2 JP 5213919B2 JP 2010138068 A JP2010138068 A JP 2010138068A JP 2010138068 A JP2010138068 A JP 2010138068A JP 5213919 B2 JP5213919 B2 JP 5213919B2
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terminal
bus bar
semiconductor device
pkg
product
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JP2012004346A (en
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泰成 日野
誠 神田
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

本発明は半導体装置に関し、特に、大電流が流れる半導体素子を用いた半導体装置に関する。   The present invention relates to a semiconductor device, and more particularly to a semiconductor device using a semiconductor element through which a large current flows.

従来、半導体素子を用いた半導体装置の配線は、ネジ締結もしくははんだ付け手法により接続されていた。ただ、ネジ締結により配線接続した場合は、半導体装置の小型化、軽量化が実現し難く、また、はんだ付けにより配線接続した場合は、接合部において高い耐久性を実現することが難しかった。また、ネジ締結およびはんだ付け両者とも、製造工程上の生産効率が好ましくなく、作業者に依存した工程となっており、生産性の向上、安定した工程の実現が問題となっていた。   Conventionally, wiring of semiconductor devices using semiconductor elements has been connected by screw fastening or soldering techniques. However, when wiring is connected by screw fastening, it is difficult to reduce the size and weight of the semiconductor device. When wiring is connected by soldering, it is difficult to achieve high durability at the joint. In addition, both screw fastening and soldering are unfavorable in terms of production efficiency in the manufacturing process, and are dependent on the operator, and there are problems in improving productivity and realizing a stable process.

特開２００２−１３４６８８号公報JP 2002-134688 A

上記のような配線接続の方法に対し、例えば特許文献１に示すような溶接により配線接続を行う方法がある。しかし溶接手法により接合する場合には、クランプ等の溶接専用治具を用いて接合個所毎に電位を与える必要があった。そこで、必要な各半導体素子を樹脂で封止したパッケージ部品（ＰＫＧ品）をケース内に組立し半導体装置を製造することにより、ＰＫＧ品から露出させた端子とケース内のバスバーとを接触させ、容易に配線接続していた。   In contrast to the above-described wiring connection method, for example, there is a method of performing wiring connection by welding as shown in Patent Document 1. However, when joining by a welding technique, it was necessary to apply a potential to each joint using a welding-dedicated jig such as a clamp. Therefore, a package part (PKG product) in which each necessary semiconductor element is sealed with a resin is assembled in a case to manufacture a semiconductor device, thereby bringing the terminals exposed from the PKG product into contact with the bus bar in the case, Wiring connection was easy.

しかしこのような場合でも、接合個所においてお互い接していない、導通されていないため、溶接不良モードが発生してしまうという問題があった。たとえば、電位が印加されていないためアーク放電されず溶接ができない、それぞれの母材が溶融するだけで両者が接合されていない分岐形状が発生する、という問題があった。   However, even in such a case, there is a problem in that a welding failure mode occurs because the joints are not in contact with each other and are not conductive. For example, there is a problem that no arc discharge occurs because no electric potential is applied and welding is not possible, and a branch shape is generated in which the respective base materials are melted and are not joined together.

本発明は上記のような問題を解決するためになされたものであり、生産性に優れた高品質、高信頼性の高寿命化された配線接続を得るとともに、しいては高信頼性を実現した半導体装置の提供を目的とする。   The present invention has been made to solve the above-described problems, and obtains high-quality, high-reliability and long-life wiring connections with excellent productivity, and also high reliability. An object of the present invention is to provide a semiconductor device.

本発明にかかる半導体装置は、半導体素子を封止してなるパッケージ部品と、前記パッケージ部品を挿入して組立体を形成するケースとを備え、前記パッケージ部品は、その側面から上方へ延在する端子を備え、前記ケースは、上方へ延在する前記端子に対し側方から接し、かつ、前記端子と溶接されたバスバーを備え、前記端子は、上広がりに延在し、前記端子は、前記バスバーとの接触部を前記バスバーと平行にするための曲折部を有する。 A semiconductor device according to the present invention includes a package component formed by sealing a semiconductor element, and a case in which the package component is inserted to form an assembly, and the package component extends upward from a side surface thereof. The terminal includes a bus bar that is in contact with the terminal extending from the side and is welded to the terminal, the terminal extends upward , and the terminal extends from the terminal. There is a bent portion for making the contact portion with the bus bar parallel to the bus bar.

本発明にかかる半導体装置によれば、半導体素子を封止してなるパッケージ部品と、前記パッケージ部品を挿入して組立体を形成するケースとを備え、前記パッケージ部品は、その側面から上方へ延在する端子を備え、前記ケースは、上方へ延在する前記端子に対し側方から接し、かつ、前記端子と溶接されたバスバーを備え、前記端子は、上広がりに延在し、前記端子は、前記バスバーとの接触部を前記バスバーと平行にするための曲折部を有することにより、端子およびバスバー両者の接触を確保でき、溶接不良モードの発生を抑制できるので、生産性に優れた高品質、高信頼性の高寿命化された配線接続を得るとともに、しいては半導体装置の高信頼性を実現することが可能となる。
The semiconductor device according to the present invention includes a package component formed by sealing a semiconductor element, and a case that forms an assembly by inserting the package component, and the package component extends upward from a side surface thereof. The case is provided with a bus bar that is in contact with the terminal extending from the side and welded to the terminal, the terminal extends upward , and the terminal is By having a bent part for making the contact part with the bus bar parallel to the bus bar, it is possible to ensure contact between both the terminal and the bus bar and to suppress the occurrence of a welding failure mode, so that the high quality with excellent productivity. As a result, it is possible to obtain a highly reliable and long-life wiring connection and to realize high reliability of the semiconductor device.

本発明の実施の形態１における、半導体装置を示す斜視図である。It is a perspective view which shows the semiconductor device in Embodiment 1 of this invention. 本発明の実施の形態１における、半導体装置を示す上面図である。It is a top view which shows the semiconductor device in Embodiment 1 of this invention. 本発明の実施の形態１における、半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in Embodiment 1 of this invention. 本発明の実施の形態１における、ＰＫＧ品の挿入時の、ＰＫＧ品の端子の曲げ角度と、ＰＫＧ品の端子がバスバーから受ける反力との関係を示す図である。It is a figure which shows the relationship between the bending angle of the terminal of a PKG product at the time of insertion of a PKG product, and the reaction force which a terminal of a PKG receives from a bus bar in Embodiment 1 of this invention. 本発明の実施の形態２における、半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in Embodiment 2 of this invention. 本発明の実施の形態３における、半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in Embodiment 3 of this invention. 本発明の実施の形態４における、半導体装置を示す断面図である。It is sectional drawing which shows the semiconductor device in Embodiment 4 of this invention.

＜Ａ．実施の形態１＞
本発明の実施の形態１である半導体装置、該半導体装置の製造方法について、図を参照しながら以下に説明する。 <A. Embodiment 1>
A semiconductor device according to Embodiment 1 of the present invention and a method for manufacturing the semiconductor device will be described below with reference to the drawings.

＜Ａ−１．構成＞
図１に、本発明の実施の形態１に係る半導体装置１０１の概略斜視図を示す。図２は、図１の上面図である。 <A-1. Configuration>
FIG. 1 is a schematic perspective view of a semiconductor device 101 according to the first embodiment of the present invention. FIG. 2 is a top view of FIG.

図１において、半導体装置１０１は、ケース３に入出力端子５を備え、入出力端子５に接続される端子２を備えたＰＫＧ品１を、ケース３内部に備える。   In FIG. 1, the semiconductor device 101 includes an input / output terminal 5 in a case 3 and a PKG product 1 including a terminal 2 connected to the input / output terminal 5 in the case 3.

ケース３内部には、ＰＫＧ品１が複数備えられ、各々のＰＫＧ品１が、バスバー４を介して接続されている。   A plurality of PKG products 1 are provided inside the case 3, and each PKG product 1 is connected via a bus bar 4.

図２は、図１の半導体装置１０１を上方から見た図であり、ケース３内に複数備えられたＰＫＧ品１が、バスバー４を介して互いに接続され、ケース３に備えられた入出力端子５と、ＰＫＧ品１の端子２とが接続されていることが分かる。   FIG. 2 is a view of the semiconductor device 101 of FIG. 1 as viewed from above. A plurality of PKG products 1 provided in the case 3 are connected to each other via a bus bar 4, and input / output terminals provided in the case 3. 5 is connected to the terminal 2 of the PKG product 1.

図３は、図１、２に示す半導体装置１０１の断面図である。図３は、図１、２において図示を省略していた構成要素も加えられた、詳細な断面図である。   FIG. 3 is a cross-sectional view of the semiconductor device 101 shown in FIGS. FIG. 3 is a detailed cross-sectional view in which components not shown in FIGS. 1 and 2 are added.

半導体装置１０１は、半導体素子等が樹脂にて封止されたパッケージ部品としてのＰＫＧ品１と、複数のＰＫＧ品１を内部に挿入して組立体を形成するケース３と、各々のＰＫＧ品１を接続する際に介在するケース３のバスバー４、ＰＫＧ品１の端子２とを備える。   The semiconductor device 101 includes a PKG product 1 as a package component in which a semiconductor element or the like is sealed with a resin, a case 3 in which a plurality of PKG products 1 are inserted to form an assembly, and each PKG product 1. The bus bar 4 of the case 3 and the terminal 2 of the PKG product 1 are provided.

半導体装置１０１はさらに以下に説明する構成を備える。尚、以下の説明にて示す各部の寸法は、一例であり、記載の寸法に限定するものではない。   The semiconductor device 101 further includes a configuration described below. In addition, the dimension of each part shown by the following description is an example, and is not limited to the dimension of description.

半導体装置１０１のケース３は、平面方向の一辺が６０〜４００ｍｍ、高さが５０〜７０ｍｍ程度で、面積が６０〜４００ｍｍの冷却器６の上面に接着されている。ケース３には底面はなく、冷却器６がケース３と接着することで、底面が形成される。   The case 3 of the semiconductor device 101 is bonded to the upper surface of the cooler 6 having a side in the plane direction of 60 to 400 mm, a height of about 50 to 70 mm, and an area of 60 to 400 mm. The case 3 does not have a bottom surface, and the bottom surface is formed by bonding the cooler 6 to the case 3.

ケース３は、銅を主成分とし、厚さが０．６〜２．５ｍｍの導体金属を、ＰＰＳ（Ｐｏｌｙ Ｐｈｅｎｙｌｅｎｅ Ｓｕｌｆｉｄｅ）、ＰＢＴ（Ｐｏｌｙ Ｂｕｔｙｌｅｎｅ Ｔｅｒｅｐｈｔｈａｌａｔｅ）をはじめとした熱可塑性樹脂で一体成型したものである。導体金属の一部がバスバー４、入出力端子５として樹脂から露出している。このバスバー４、入出力端子５は、それぞれ配線接続される。入出力端子５は、バッテリー等の電源やモータ駆動機、発電機に接続される。   Case 3 is formed by integrally molding a conductive metal mainly composed of copper and having a thickness of 0.6 to 2.5 mm with a thermoplastic resin such as PPS (Poly Phenylene Sulfide) and PBT (Poly Butylene Terephthalate). It is. Part of the conductor metal is exposed from the resin as the bus bar 4 and the input / output terminal 5. The bus bar 4 and the input / output terminal 5 are connected by wiring. The input / output terminal 5 is connected to a power source such as a battery, a motor driver, and a generator.

ケース３の下方に位置する冷却器６は、主にアルミから成り立っており、空冷もしくは水冷式によりＰＫＧ品１の内部に搭載された半導体素子を冷却させる。冷却器６上において、ケース３は接着剤で接着され固定されている。   The cooler 6 located below the case 3 is mainly made of aluminum, and cools the semiconductor element mounted inside the PKG product 1 by air cooling or water cooling. On the cooler 6, the case 3 is bonded and fixed with an adhesive.

前述のように、複数個（図１では１４個）のＰＫＧ品１がケース３内に組み込まれている。ＰＫＧ品１には、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）、ＦｗＤｉ（Ｆｒｅｅ Ｗｈｅｅｌｉｎｇ Ｄｉｏｄｅ）といった半導体素子が備えられる。   As described above, a plurality (14 in FIG. 1) of PKG products 1 are incorporated in the case 3. The PKG product 1 is provided with semiconductor elements such as IGBT (Insulated Gate Bipolar Transistor) and FwDi (Free Wheeling Diode).

このような半導体素子は、放熱性を有した回路基板上に、Ｓｎをはじめとした金属接合材料もしくは熱伝導率２０〜９０Ｗ／ｍｋのＡｇペースト、ナノペースト状の１７５℃以上の耐久性を有する導電性接着剤材料等により接合されている。また、半導体素子および回路基板上は、アルミ等によりワイヤボンディング、Ｓｎをはじめとした金属接合材料により、ＰＫＧ品１に実装されている。   Such a semiconductor element has a durability of 175 ° C. or more in the form of a metal bonding material such as Sn or an Ag paste having a thermal conductivity of 20 to 90 W / mk or a nanopaste on a circuit board having heat dissipation properties. Bonded by a conductive adhesive material or the like. Further, the semiconductor element and the circuit board are mounted on the PKG product 1 by wire bonding using aluminum or the like, or by a metal bonding material such as Sn.

そしてＰＰＳ、ＰＢＴまたはエポキシといった樹脂でＰＫＧ品１を一体成型し、ＰＫＧ品１内の配線部である、主に銅から成り立っている端子２を露出させる。尚、本実施の形態１では、半導体素子をＩＧＢＴ、ＦｗＤｉとしたが、用途に応じてＭＯＳＦＥＴ（Ｍｅｔａｌ−Ｏｘｉｄｅ−Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ−Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）等を用いても構わない。   Then, the PKG product 1 is integrally molded with a resin such as PPS, PBT, or epoxy, and the terminal 2 mainly made of copper, which is a wiring portion in the PKG product 1, is exposed. In the first embodiment, the semiconductor element is IGBT or FwDi. However, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or the like may be used depending on the application.

ＰＫＧ品１内に搭載されている半導体素子数も用途に応じて搭載している。したがって、ＰＫＧ品１のサイズは、半導体素子の仕様（サイズ、個数）に対応しており、一辺２０〜８０ｍｍである。   The number of semiconductor elements mounted in the PKG product 1 is also mounted according to the application. Therefore, the size of the PKG product 1 corresponds to the specifications (size, number) of the semiconductor element and is 20 to 80 mm on a side.

ＰＫＧ品１は、放熱グリス剤７を介して冷却器６に取り付けられている。放熱グリス剤７は、１．１〜５Ｗ／ｍｋ程度の放熱性があり、ＰＫＧ品１内に搭載された半導体素子で発生した熱が、放熱性を有した回路基板、放熱グリス剤７を介して冷却器６に放熱される。こうすることにより、半導体素子の特性を十分に引き出すことができる。   The PKG product 1 is attached to the cooler 6 via a heat dissipating grease agent 7. The heat dissipating grease agent 7 has a heat dissipating property of about 1.1 to 5 W / mk, and the heat generated in the semiconductor element mounted in the PKG product 1 passes through the heat dissipating circuit board and the heat dissipating grease agent 7. The heat is radiated to the cooler 6. By doing so, the characteristics of the semiconductor element can be sufficiently extracted.

コンデンサ、ＩＣや保護回路等を有した制御基板８が、ＰＫＧ品１の上面に搭載され、ＰＫＧ品１の信号端子と配線接続される（図示は省略）。図１〜３には示していないが、ケース３内はエポキシ等の樹脂で封止してかまわない。また制御基板８のさらに上方で、ねじ締めで蓋をしてもかまわない。   A control board 8 having a capacitor, an IC, a protection circuit, and the like is mounted on the upper surface of the PKG product 1 and connected to the signal terminal of the PKG product 1 by wiring (not shown). Although not shown in FIGS. 1 to 3, the case 3 may be sealed with a resin such as epoxy. Further, a lid may be secured by screwing further above the control board 8.

半導体製品の通電電流は４５〜４００Ａであり、定格電圧としては６００〜１５００Ｖである。主に入力電圧を昇圧するコンバータ、モータの回生エネルギーの回収、モータ制御を実施する機能を保有している。   The energization current of the semiconductor product is 45 to 400 A, and the rated voltage is 600 to 1500 V. It has a converter that boosts the input voltage, a function to recover motor regenerative energy, and motor control.

ＰＫＧ品１の端子２は、半導体素子の各電極と接続されており、幅が３〜２０ｍｍ、厚さが０．５〜２．０ｍｍ程度である。ＰＫＧ品１の側面から露出し、フォーミングされ曲折し、長さ３〜１０ｍｍ程度が上方向に向き、端子２の先端付近でバスバー４と接触するように、上広がりに延在する。   The terminal 2 of the PKG product 1 is connected to each electrode of the semiconductor element and has a width of 3 to 20 mm and a thickness of about 0.5 to 2.0 mm. It is exposed from the side surface of the PKG product 1, formed and bent, and extends upward so that a length of about 3 to 10 mm faces upward and contacts the bus bar 4 near the tip of the terminal 2.

端子２は、ＰＫＧ品１の側面から水平方向に延び、略鉛直上方向に曲折し誘導される形状である。このとき、鉛直上方向に曲折するよりも浅い角度で、上方に誘導されるように形成されるため、端子２の端部は互いから離れる方向に広がり（上広がり）、それぞれが接するバスバー４側方向に寄りかかるような形状となる。すなわち端子２の曲折角度は９０度より小さい。   The terminal 2 has a shape that extends horizontally from the side surface of the PKG product 1 and is bent and guided substantially vertically upward. At this time, since it is formed so as to be guided upward at a shallower angle than bending vertically upward, the end portions of the terminals 2 spread in a direction away from each other (upward spread), and the bus bar 4 side on which they are in contact with each other The shape leans in the direction. That is, the bending angle of the terminal 2 is smaller than 90 degrees.

このように形成することにより、ＰＫＧ品１の端子２は、それぞれが接するバスバー４から反力を受ける。バスバー４は、端子２に対し側方から接する。本実施の形態１では、端子２の曲折角度は７５〜９０度未満とした。なお、端子２の厚みより、バスバー４の厚みを若干大きくし、剛性に差をつけた。   By forming in this way, the terminal 2 of the PKG product 1 receives a reaction force from the bus bar 4 with which it contacts. The bus bar 4 contacts the terminal 2 from the side. In the first embodiment, the bending angle of the terminal 2 is 75 to less than 90 degrees. In addition, the thickness of the bus bar 4 was made slightly larger than the thickness of the terminal 2 to give a difference in rigidity.

端子２の曲折角度と反力との関係を図４に示す。図４において、横軸が端子２の曲折角度、縦軸がそのとき端子２が受ける反力である。本実施の形態１では、８０Ｎ以下の反力を受ける曲折角度に設定した（すなわち、７５°以上の曲折角度）。曲折角度７５°以下で端子２を曲げても反力の大きさは大きくは変わらず、反力による接触向上の効果に差は少ないと考えられるからである。このバスバー４からの反力により、端子２とバスバー４とは接触し、導通し、半導体装置１０１内の配線接続は容易に実現することができる。このとき、端子２とバスバー４の抵抗値は、０．１Ω以下である。   FIG. 4 shows the relationship between the bending angle of the terminal 2 and the reaction force. In FIG. 4, the horizontal axis represents the bending angle of the terminal 2, and the vertical axis represents the reaction force received by the terminal 2 at that time. In this Embodiment 1, it set to the bending angle which receives the reaction force of 80 N or less (namely, bending angle of 75 degrees or more). This is because even when the terminal 2 is bent at a bending angle of 75 ° or less, the magnitude of the reaction force does not change greatly, and it is considered that there is little difference in the effect of improving the contact due to the reaction force. By the reaction force from the bus bar 4, the terminal 2 and the bus bar 4 come into contact with each other and are electrically connected, and the wiring connection in the semiconductor device 101 can be easily realized. At this time, the resistance value of the terminal 2 and the bus bar 4 is 0.1Ω or less.

また端子２が上広がりの形状であるのでバスバー４に接触しながらＰＫＧ品１を搭載することができ、その作業が容易となる。さらに図３に示すように、端子２がＰＫＧ品１中心に対し対称位置にある場合、すなわち、１対の端子２がＰＫＧ品１の向かい合う側面において、互いに対応する位置に配置される場合は、端子２はＰＫＧ品１の中心方向に向かって略対称方向の反力を受けるので、ＰＫＧ品１の冷却器６上の位置、配置が、この反力をガイドにして容易に固定することができる。よって、従来必要であったＰＫＧ品１の位置決め構造、治具は不要になるという効果がある。   Further, since the terminal 2 has a shape that spreads upward, the PKG product 1 can be mounted while being in contact with the bus bar 4, and the work is facilitated. Further, as shown in FIG. 3, when the terminal 2 is in a symmetrical position with respect to the center of the PKG product 1, that is, when the pair of terminals 2 are arranged at positions corresponding to each other on the opposite side surfaces of the PKG product 1, Since the terminal 2 receives a reaction force in a substantially symmetrical direction toward the center direction of the PKG product 1, the position and arrangement of the PKG product 1 on the cooler 6 can be easily fixed by using the reaction force as a guide. . Therefore, there is an effect that the positioning structure and jig for the PKG product 1 which are conventionally required are not required.

端子２、バスバー４の各先端が接触している個所を溶接することによって（溶接部１１）、半導体装置１０１内の配線接続がさらに安定し、一定以上の接合強度を確保した配線接続を得ることができる。溶接手法としては、ＴＩＧをはじめとしたアーク放電を用いた溶接接合、もしくは局所加熱可能なレーザ発生電源を用いたレーザ溶接、もしくは電子ビームを用いた溶接を適用させることができる。   By welding the portions where the tips of the terminal 2 and the bus bar 4 are in contact (welded portion 11), the wiring connection in the semiconductor device 101 is further stabilized, and a wiring connection in which a certain level of bonding strength is secured is obtained. Can do. As a welding technique, welding joining using arc discharge such as TIG, laser welding using a laser power source capable of local heating, or welding using an electron beam can be applied.

通常、上記に挙げた溶接手法は、すべての接合個所に電位印加が必要であったり、また接合個所に隙間があると接合不良が発生しやすい。しかしながら、本実施の形態１においては、端子２、バスバー４は、反力を受けながら接触し、導通しているので、クランプ等の溶接専用治具を用いて個々の接合個所に電位を与える必要はない。つまり、半導体装置１０１の入出力端子５のうち必要な個所のみにケーブル等にて配線し電位を与えれば、容易に溶接することができる。また、電位が与えられていないことにより溶接不可となることを回避できる（リードタイムの向上となる）。   In general, the welding methods listed above require potential application at all joints, and if there are gaps at the joints, poor joints are likely to occur. However, in the first embodiment, the terminal 2 and the bus bar 4 are in contact with each other while receiving a reaction force, and are electrically connected. Therefore, it is necessary to apply a potential to each joint using a dedicated welding jig such as a clamp. There is no. That is, welding can be easily performed if wiring is applied to only necessary portions of the input / output terminals 5 of the semiconductor device 101 with a cable or the like and a potential is applied. In addition, it is possible to avoid that welding is not possible due to no potential being applied (lead time is improved).

端子２、バスバー４は、接合個所である端部で接触しているので、端子２、バスバー４のうち厚みの小さいほう（本実施の形態１では端子２）の、その厚みの１／２以下に、端子２とバスバー４との隙間（ＧＡＰ間）を抑制することができるので、隙間を原因として発生する分岐形状（接合個所が、一つの接合形状ではなく、二つの接合形状となり、端子２とバスバー４とが適切に接合されていない、もしくは一部だけが接合している溶接不良モードを生じる形状）の発生を抑制することができる。   Since the terminal 2 and the bus bar 4 are in contact with each other at the end which is the joining portion, the thickness of the smaller thickness of the terminal 2 and the bus bar 4 (terminal 2 in the first embodiment) is ½ or less of the thickness. In addition, since the gap between the terminal 2 and the bus bar 4 (between the gaps) can be suppressed, the branch shape generated due to the gap (the junction location is not one junction shape but two junction shapes). And the bus bar 4 are not properly joined, or only a part of them is joined, and the occurrence of a welding failure mode) can be suppressed.

ＰＫＧ品１の端子２がバスバー４と接触しない場合は、ケース３と直接接触することになる（図３参照）。ＰＫＧ品１を冷却器６上に搭載するとき、バスバー４と接触しない端子２が最初に接するケース３の側面をテーパー形状３ａにする。こうすることにより、このテーパー形状３ａがＰＫＧ品１を搭載する際のガイドとなり、その搭載性が容易となり、しいてはＰＫＧ品１搭載時に発生しやすい樹脂製ケースの割れ、欠けを抑制することができる。   When the terminal 2 of the PKG product 1 is not in contact with the bus bar 4, it is in direct contact with the case 3 (see FIG. 3). When the PKG product 1 is mounted on the cooler 6, the side surface of the case 3 where the terminal 2 that does not come into contact with the bus bar 4 first comes into contact with the tapered shape 3a. By doing so, the taper shape 3a becomes a guide when mounting the PKG product 1, and the mounting property becomes easy, thereby suppressing the cracking and chipping of the resin case that is likely to occur when the PKG product 1 is mounted. Can do.

＜Ａ−２．製造方法＞
半導体装置１０１の製造工程として、順に記す。バスバー４と一体成型するケース３を製作し、その後、ケース３と大キャストもしくはろう付けで製作された冷却器６を、接着剤で固定する（本実施の形態１では、冷却器６）。 <A-2. Manufacturing method>
The manufacturing process of the semiconductor device 101 will be described in order. The case 3 integrally molded with the bus bar 4 is manufactured, and then the case 3 and the cooler 6 manufactured by large cast or brazing are fixed with an adhesive (the cooler 6 in the first embodiment).

次に、冷却器６上の間に放熱グリス剤７塗布、印刷し、ＰＫＧ品１を冷却器６上面の放熱グリス剤７を塗布した位置に鉛直方向に下降させる。その際、ＰＫＧ品１は、吸着され推力を持った装置にて変位・荷重制御をしながら押し込まれる。   Next, the heat dissipating grease agent 7 is applied and printed on the cooler 6, and the PKG product 1 is lowered in the vertical direction to the position where the heat dissipating grease agent 7 is applied on the upper surface of the cooler 6. At that time, the PKG product 1 is pushed in while controlling the displacement and the load by a device that is attracted and has thrust.

ＰＫＧ品１には端子２が設けられており、冷却器６上に搭載される際、その端子２が、ケース３に設けられているバスバー４またはケース側面と接触する。１対の端子２が、バスバー４側またはケース側面に寄りかかるように、すなわち上広がりに設けられているため、端子２はバスバー４またはケース側面から反力を受ける。   The PKG product 1 is provided with a terminal 2, and when the PKG product 1 is mounted on the cooler 6, the terminal 2 comes into contact with the bus bar 4 provided on the case 3 or the side surface of the case. Since the pair of terminals 2 are provided so as to lean against the bus bar 4 side or the case side surface, that is, are provided so as to spread upward, the terminal 2 receives a reaction force from the bus bar 4 or the case side surface.

次に、互いが反力を受け接している端子２およびバスバー４の先端に溶接を実施し（図の溶接部１１）、最後に制御基板８をケース３上方にて配置、はんだ付けし、蓋をねじ止めする（図示せず）。なお、端子２およびバスバー４の接合は溶接せずに、加圧接合してもかまわない。   Next, welding is performed on the ends of the terminal 2 and the bus bar 4 which are in contact with each other due to the reaction force (welded portion 11 in the figure), and finally the control board 8 is placed over the case 3 and soldered. Is screwed (not shown). Note that the terminal 2 and the bus bar 4 may be joined by pressure without welding.

このように、本実施の形態１における半導体装置１０１の製造方法では、半導体素子を直接実装するわけではないので、容易に半導体装置を製造することができる。また半導体装置１０１は、複数のＰＫＧ品１から構成されているので、製造工程もしくは製品としての使用中に、何らかの原因により半導体素子に不具合が発生しても、不具合個所のみ、つまり不具合が発生したＰＫＧ品１のみ交換、リペアすればよい。これは、従来製品ごと廃棄していたことを鑑みればコスト上大いにメリットがある。   As described above, in the method for manufacturing the semiconductor device 101 according to the first embodiment, the semiconductor element is not directly mounted, and thus the semiconductor device can be easily manufactured. Further, since the semiconductor device 101 is composed of a plurality of PKG products 1, even if a failure occurs in the semiconductor element due to some cause during the manufacturing process or use as a product, only the failure portion, that is, the failure has occurred. Only the PKG product 1 needs to be replaced and repaired. In view of the fact that the conventional product has been discarded, there is a great cost advantage.

＜Ａ−３．効果＞
本発明にかかる実施の形態１によれば、半導体装置において、半導体素子を封止してなるパッケージ部品としてのＰＫＧ品１と、ＰＫＧ品１を挿入して組立体を形成するケース３とを備え、ＰＫＧ品１は、その側面から上方へ延在する端子２を備え、ケース３は、上方へ延在する端子２に対し側方から接するバスバー４を備え、端子２は、上広がりに延在することで、端子２およびケース３の配線部としてのバスバー４両者の接触を確保でき、溶接不良モードの発生を抑制できるので、生産性に優れた高品質、高信頼性の高寿命化された配線接続を得るとともに、しいては半導体装置の高信頼性を実現することが可能となる。また、配線接続も容易になる。 <A-3. Effect>
According to the first embodiment of the present invention, a semiconductor device includes a PKG product 1 as a package component formed by sealing a semiconductor element, and a case 3 in which the PKG product 1 is inserted to form an assembly. The PKG product 1 includes a terminal 2 extending upward from the side surface thereof, the case 3 includes a bus bar 4 that contacts the terminal 2 extending upward from the side, and the terminal 2 extends upward. As a result, it is possible to ensure contact between both the terminal 2 and the bus bar 4 as the wiring part of the case 3 and to suppress the occurrence of a welding failure mode, so that the product has a high quality, high reliability and a long life. In addition to obtaining wiring connection, it is possible to achieve high reliability of the semiconductor device. Also, wiring connection is facilitated.

また、本発明にかかる実施の形態１によれば、半導体装置において、端子２とバスバー４とは溶接されることで、配線接続がさらに安定し、信頼性に優れた半導体装置を得ることができる。   In addition, according to the first embodiment of the present invention, in the semiconductor device, the terminal 2 and the bus bar 4 are welded, so that the wiring connection is further stabilized and the semiconductor device having excellent reliability can be obtained. .

また、本発明にかかる実施の形態１によれば、半導体装置において、端子２は、複数備えられ、複数の端子２は、ＰＫＧ品１の向かい合う側面において互いに対応する位置に備えられることで、バスバー４から略対称方向の反力を受け、その反力をガイドにして容易にＰＫＧ品１を位置決めし、搭載することができる。   Also, according to the first embodiment of the present invention, in the semiconductor device, a plurality of terminals 2 are provided, and the plurality of terminals 2 are provided at positions corresponding to each other on the opposite side surfaces of the PKG product 1, thereby The PKG product 1 can be easily positioned and mounted by receiving a reaction force in a substantially symmetrical direction from 4 and using the reaction force as a guide.

また、本発明にかかる実施の形態１によれば、半導体装置において、ケース３の側面は、テーパー形状３ａを有することで、ＰＫＧ品１の挿入の際、バスバー４に接触しない端子２が、ケース３の側面を損傷させること、または端子２が損傷を受ける等の不具合を抑制することができる。また、ＰＫＧ品１の挿入が容易になる。   Further, according to the first embodiment of the present invention, in the semiconductor device, the side surface of the case 3 has the tapered shape 3a, so that when the PKG product 1 is inserted, the terminal 2 that does not contact the bus bar 4 is 3 can be prevented from being damaged, or the terminal 2 can be damaged. Further, the insertion of the PKG product 1 becomes easy.

＜Ｂ．実施の形態２＞
＜Ｂ−１．構成＞
図５に、本発明の実施の形態２に係る半導体装置１０２の断面図を示す。半導体装置１０２は、半導体素子が樹脂にて封止されたＰＫＧ品１と、バスバー４と一体成型されたケース３と、冷却器６とを備える。その他実施の形態１と同様の符号を付けた構成要素については、実施の形態１と同様であるので、詳細な説明を省略する。 <B. Second Embodiment>
<B-1. Configuration>
FIG. 5 shows a cross-sectional view of the semiconductor device 102 according to the second embodiment of the present invention. The semiconductor device 102 includes a PKG product 1 in which a semiconductor element is sealed with a resin, a case 3 integrally formed with a bus bar 4, and a cooler 6. The other components having the same reference numerals as those in the first embodiment are the same as those in the first embodiment, and thus detailed description thereof is omitted.

ＰＫＧ品１の端子２０は、ＰＫＧ品１の側面から水平方向に延び、略鉛直上方向に曲折し誘導される形状である。このとき、鉛直上方向に曲折するよりも浅い角度で、上方に誘導されるように形成されるため、端子２０の端部は互いから離れる方向に広がり（上広がり）、それぞれが接するバスバー４側方向に寄りかかるような形状となる。また、その曲折個所から先端にかけて、鉛直方向に向かうように、すなわち１対の端子２０のバスバー４との接触部が、バスバー４と平行になるような曲折形状となっている。   The terminal 20 of the PKG product 1 has a shape that extends in the horizontal direction from the side surface of the PKG product 1 and is bent and guided substantially vertically upward. At this time, since it is formed so as to be guided upward at a shallower angle than bending vertically upward, the end portions of the terminals 20 spread away from each other (upward spread), and the bus bar 4 side on which they are in contact with each other The shape leans in the direction. Further, a bent shape is formed such that the contact portion of the pair of terminals 20 with the bus bar 4 is parallel to the bus bar 4 from the bent portion to the tip in the vertical direction.

このように形成することにより、端子２０およびバスバー４の端部における接触面積が大きくなるので、十分な接合強度を確保できるように接合サイズを大きくすることができる。また、溶接手法により配線接続すると、この溶接による接合部に加えて、接合部根元付近においても端子２０とバスバー４とが接することになるので、高品質、高寿命な配線接続となりうる。しいては、半導体装置の高品質、高寿命になることから、特に車載対応の半導体装置に適している。   By forming in this way, the contact area at the end of the terminal 20 and the bus bar 4 is increased, so that the bonding size can be increased so as to ensure sufficient bonding strength. In addition, when wiring is connected by a welding technique, the terminal 20 and the bus bar 4 are in contact with each other in the vicinity of the base of the joint in addition to the joint by welding, so that high-quality and long-life wiring can be achieved. Therefore, since the high quality and long life of the semiconductor device are obtained, the semiconductor device is particularly suitable for a vehicle-compatible semiconductor device.

また、ＰＫＧ品１を冷却器６上に搭載するとき、搭載当初からスムーズな挿入、組立が可能である。なお、端子２０およびバスバー４が、同一形状でもかまわない。   Further, when the PKG product 1 is mounted on the cooler 6, smooth insertion and assembly are possible from the beginning of mounting. Note that the terminal 20 and the bus bar 4 may have the same shape.

＜Ｂ−２．効果＞
本発明にかかる実施の形態２によれば、半導体装置において、端子２０は、バスバー４との接触部をバスバー４と平行にするための曲折部を有することで、端子２０とバスバー４との接触面積が大きくなり、より高品質、高寿命な配線接続を実現することができる。 <B-2. Effect>
According to the second embodiment of the present invention, in the semiconductor device, the terminal 20 has a bent portion for making the contact portion with the bus bar 4 parallel to the bus bar 4, so that the contact between the terminal 20 and the bus bar 4 is achieved. The area is increased, and it is possible to realize wiring connection with higher quality and longer life.

＜Ｃ．実施の形態３＞
＜Ｃ−１．構成＞
図６に、本発明の実施の形態３に係る半導体装置１０３の断面図を示す。半導体装置１０３は、半導体素子が樹脂にて封止されたＰＫＧ品１と、バスバー４と一体成型されたケース３と、冷却器６とを備える。その他実施の形態１と同様の符号を付けた構成要素については、実施の形態１と同様であるので、詳細な説明を省略する。 <C. Embodiment 3>
<C-1. Configuration>
FIG. 6 shows a cross-sectional view of the semiconductor device 103 according to the third embodiment of the present invention. The semiconductor device 103 includes a PKG product 1 in which a semiconductor element is sealed with a resin, a case 3 integrally formed with a bus bar 4, and a cooler 6. The other components having the same reference numerals as those in the first embodiment are the same as those in the first embodiment, and thus detailed description thereof is omitted.

ＰＫＧ品１の端子２１は、ＰＫＧ品１の側面から水平方向に延び、略鉛直上方向に曲折し誘導される形状である。このとき、鉛直上方向に曲折するよりも浅い角度で、上方に誘導されるように形成されるため、端子２１の端部は互いから離れる方向に広がり（上広がり）、それぞれが接するバスバー４側方向に寄りかかるような形状となる。さらに、端子２１とバスバー４とが接する部分（接触部）において凸形状（凸部）となっている。   The terminal 21 of the PKG product 1 has a shape that extends in the horizontal direction from the side surface of the PKG product 1 and is bent and guided substantially vertically upward. At this time, since it is formed so as to be guided upward at a shallower angle than bending vertically upward, the ends of the terminals 21 spread away from each other (upwardly spread), and the bus bar 4 side on which they are in contact with each other The shape leans in the direction. Further, the portion (contact portion) where the terminal 21 and the bus bar 4 are in contact has a convex shape (convex portion).

端子２１の先端を接触するバスバー４側に凸形状（凸部）とすることで、端子２１とバスバー４とを容易に接触させ、導通させることができる。   By forming a convex shape (convex portion) on the side of the bus bar 4 that contacts the tip of the terminal 21, the terminal 21 and the bus bar 4 can be easily brought into contact with each other and can be made conductive.

さらにＰＫＧ品１を冷却器６上に搭載したあと、ＰＫＧ品１の上面にばね１０を介して押さえ板９を配置してもよく、これによって全ＰＫＧ品１を押さえ込む。こうすることによって、端子２１とバスバー４との接触部が安定し、ＰＫＧ品１が上向きの力を受けてもＰＫＧ品１の放熱能力を変わらず保持することができる。なお、ばね１０および押さえ板９は、実施の形態１、２において備えることも可能である。   Further, after the PKG product 1 is mounted on the cooler 6, a pressing plate 9 may be disposed on the upper surface of the PKG product 1 via a spring 10, thereby pressing down all the PKG products 1. By doing so, the contact portion between the terminal 21 and the bus bar 4 is stabilized, and even if the PKG product 1 receives an upward force, the heat dissipation capability of the PKG product 1 can be kept unchanged. In addition, the spring 10 and the pressing plate 9 can be provided in the first and second embodiments.

なお、凸部を設けた端子２１を備える場合、端子２１は、凸形状の頂点がバスバー４に接触し反力を受けるような曲折角度を備えればよい。   In addition, when providing the terminal 21 which provided the convex part, the terminal 21 should just be provided with the bending angle which a convex-shaped vertex contacts the bus-bar 4 and receives reaction force.

＜Ｃ−２．効果＞
本発明にかかる実施の形態３によれば、半導体装置において、端子２１は、バスバー４との接触部に凸部を有することで、端子２１とバスバー４とを容易に接続させ、信頼性の高い配線接続を実現できる。また、加工も容易となる。 <C-2. Effect>
According to the third embodiment of the present invention, in the semiconductor device, the terminal 21 has the convex portion at the contact portion with the bus bar 4, thereby easily connecting the terminal 21 and the bus bar 4 and having high reliability. Wiring connection can be realized. In addition, processing becomes easy.

＜Ｄ．実施の形態４＞
＜Ｄ−１．構成＞
図７に、本発明の実施の形態４に係る半導体装置１０４の断面図を示す。半導体装置１０２は、半導体素子が樹脂にて封止されたＰＫＧ品１と、バスバー４０と一体成型されたケース３と、冷却器６とを備える。その他実施の形態１と同様の符号を付けた構成要素については、実施の形態１と同様であるので、詳細な説明を省略する。 <D. Embodiment 4>
<D-1. Configuration>
FIG. 7 is a cross-sectional view of the semiconductor device 104 according to the fourth embodiment of the present invention. The semiconductor device 102 includes a PKG product 1 in which a semiconductor element is sealed with a resin, a case 3 integrally formed with a bus bar 40, and a cooler 6. The other components having the same reference numerals as those in the first embodiment are the same as those in the first embodiment, and thus detailed description thereof is omitted.

端子２２は、ＰＫＧ品１の側面から略鉛直上方向に延びる。このとき、鉛直方向よりもバスバー４０側に傾いて、すなわち端子２２の端部は互いに離れる方向に広がり（上広がり）、それぞれが接するバスバー４０側方向に寄りかかるような形状となる。さらにその先端が、１対の端子２２の互いに向き合う方向（内方向）に向かうＲ形状である。同様にバスバー４０も、略鉛直上方向に、端子２２側に傾いて延びるように形成される。端子２２とバスバー４０は、それぞれそのＲ形状をした先端個所で接触し、導通している。   The terminal 22 extends substantially vertically upward from the side surface of the PKG product 1. At this time, it is inclined to the bus bar 40 side relative to the vertical direction, that is, the end portions of the terminals 22 spread in a direction away from each other (upwardly spread), and are in a shape leaning toward the bus bar 40 side direction in contact with each other. Further, the tip of the pair of terminals 22 has an R shape that faces in a direction (inward direction) in which the pair of terminals 22 face each other. Similarly, the bus bar 40 is also formed so as to extend in a substantially vertically upward direction inclined toward the terminal 22 side. The terminal 22 and the bus bar 40 are in contact with each other at the tip of the R shape and are electrically connected.

端子２２およびバスバー４０の接触する部分は、それぞれを金型でリードカットしフォーミングする際、ダレ面が生じるのでそれを活用してかまわない。ただし、そのダレ面の方向は互いに反する方向とする必要がある。   The portions where the terminals 22 and the bus bar 40 are in contact with each other may be used because a sag surface is formed when the lead 22 is lead-cut with a die and formed. However, the direction of the sag surface must be opposite to each other.

このように形成することにより、端子２２とバスバー４０とを容易に接触させることができ、製造工程も、端子２２とバスバー４０とを接触させるための新たな工程は不要となり安価である。なお端子２２およびバスバー４０の厚みは同一でもかまわない。   By forming in this way, the terminal 22 and the bus bar 40 can be easily brought into contact with each other, and a new process for bringing the terminal 22 and the bus bar 40 into contact with each other is unnecessary and inexpensive. The terminal 22 and the bus bar 40 may have the same thickness.

またＲ形状の部分があるため、溶接接合サイズは大きくなり十分な接合強度の接合部を得ることができる。なお端子２２およびバスバー４０の先端を溶接しなくてもかまわない。   In addition, since there is an R-shaped portion, the weld joint size is increased, and a joint portion having sufficient joint strength can be obtained. The terminals 22 and the tips of the bus bars 40 may not be welded.

なお、図７においてはケース３の側面には実施の形態１〜３のようなテーパー形状３ａは示されていないが、同様に備えられていてもよい。   In FIG. 7, the side surface of the case 3 is not shown the tapered shape 3 a as in the first to third embodiments, but may be provided similarly.

＜Ｄ−２．効果＞
本発明にかかる実施の形態４によれば、半導体装置において、端子２２の先端は、内方向に向かうＲ形状部を有することで、端子２２とバスバー４０とを容易に接触させることができる。また、端子２２は金型でフォーミング、カットされるので、そのダレ面をも活用することができ、端子２２とバスバー４０とが接するための工程が不要となる。 <D-2. Effect>
According to the fourth embodiment of the present invention, in the semiconductor device, the tip of the terminal 22 has the R-shaped portion directed inward, so that the terminal 22 and the bus bar 40 can be easily brought into contact with each other. In addition, since the terminal 22 is formed and cut with a mold, the sagging surface can be used, and a process for contacting the terminal 22 and the bus bar 40 becomes unnecessary.

また、本発明にかかる実施の形態４によれば、半導体装置において、バスバー４０は、端子２２と同様の形状であることで、端子２２とバスバー４０とを容易に接触させることができる。また、より大きな反力を受け、導通を確保することができる。さらにＰＫＧ品１の固定も安定化する。   In addition, according to the fourth embodiment of the present invention, in the semiconductor device, the bus bar 40 has the same shape as the terminal 22, so that the terminal 22 and the bus bar 40 can be easily brought into contact with each other. In addition, it is possible to ensure conduction by receiving a larger reaction force. Furthermore, the fixing of the PKG product 1 is also stabilized.

１ ＰＫＧ品、２，２０，２１，２２ 端子、３ ケース、３ａ テーパー形状、４，４０ バスバー、５ 入出力端子、６ 冷却器、７ 放熱グリス剤、８ 制御基板、９ 押さえ板、１０ ばね、１１ 溶接部、１０１，１０２，１０３，１０４ 半導体装置。   1 PKG product, 2, 20, 21, 22 terminal, 3 case, 3a taper shape, 4,40 bus bar, 5 input / output terminal, 6 cooler, 7 heat dissipating grease agent, 8 control board, 9 holding plate, 10 spring, 11 Welded part, 101, 102, 103, 104 Semiconductor device.

Claims (7)

半導体素子を封止してなるパッケージ部品と、
前記パッケージ部品を挿入して組立体を形成するケースとを備え、
前記パッケージ部品は、その側面から上方へ延在する端子を備え、
前記ケースは、上方へ延在する前記端子に対し側方から接し、かつ、前記端子と溶接されたバスバーを備え、
前記端子は、上広がりに延在し、
前記端子は、前記バスバーとの接触部を前記バスバーと平行にするための曲折部を有する、
半導体装置。 A package component formed by sealing a semiconductor element;
A case for inserting the package component to form an assembly;
The package component includes a terminal extending upward from a side surface thereof,
The case includes a bus bar that is in contact with the terminal extending upward from the side and welded to the terminal ,
The terminal extends upward;
The terminal has a bent portion for making a contact portion with the bus bar parallel to the bus bar.
Semiconductor device. 前記端子は、複数備えられ、
前記複数の端子は、前記パッケージ部品の向かい合う側面において互いに対応する位置に備えられる、
請求項１に記載の半導体装置。 A plurality of the terminals are provided,
The plurality of terminals are provided at positions corresponding to each other on opposite side surfaces of the package component.
The semiconductor device according to claim 1. 前記バスバーは、前記端子と同様の形状である、
請求項２に記載の半導体装置。 The bus bar has the same shape as the terminal .
The semiconductor device according to claim 2 . 前記ケースの側面は、テーパー形状を有する、
請求項１〜３のいずれかに記載の半導体装置。 The side surface of the case has a tapered shape ,
The semiconductor device according to claim 1. 半導体素子を封止してなるパッケージ部品と、
前記パッケージ部品を挿入して組立体を形成するケースとを備え、
前記パッケージ部品は、その側面から上方へ延在する端子を備え、
前記ケースは、上方へ延在する前記端子に対し側方から接し、かつ、前記端子と溶接されたバスバーを備え、
前記端子は、上広がりに延在し、前記バスバーとの接触部に凸部を有する、
半導体装置。 A package component formed by sealing a semiconductor element;
A case for inserting the package component to form an assembly;
The package component includes a terminal extending upward from a side surface thereof,
The case includes a bus bar that is in contact with the terminal extending upward from the side and welded to the terminal,
The terminal extends upward and has a convex portion at a contact portion with the bus bar .
Semiconductor device. 半導体素子を封止してなるパッケージ部品と、
前記パッケージ部品を挿入して組立体を形成するケースとを備え、
前記パッケージ部品は、その側面から上方へ延在する端子を備え、
前記ケースは、上方へ延在する前記端子に対し側方から接し、かつ、前記端子と溶接されたバスバーを備え、
前記端子は、上広がりに延在し、
前記端子の先端は、内方向に向かうＲ形状部を有する、
半導体装置。 A package component formed by sealing a semiconductor element;
A case for inserting the package component to form an assembly;
The package component includes a terminal extending upward from a side surface thereof,
The case includes a bus bar that is in contact with the terminal extending upward from the side and welded to the terminal,
The terminal extends upward;
The tip of the terminal has an R-shaped portion that faces inward .
Semiconductor device. 半導体素子を封止してなるパッケージ部品と、
前記パッケージ部品を挿入して組立体を形成するケースとを備え、
前記パッケージ部品は、その側面から上方へ延在する端子を備え、
前記ケースは、上方へ延在する前記端子に対し側方から接し、かつ、前記端子と溶接されたバスバーを備え、
前記端子は、上広がりに延在し、
前記端子は、複数備えられ、
前記複数の端子は、前記パッケージ部品の向かい合う側面において互いに対応する位置に備えられ、
前記バスバーは、前記端子と同様の形状である、
半導体装置。 A package component formed by sealing a semiconductor element;
A case for inserting the package component to form an assembly;
The package component includes a terminal extending upward from a side surface thereof,
The case includes a bus bar that is in contact with the terminal extending upward from the side and welded to the terminal ,
The terminal extends upward;
A plurality of the terminals are provided,
The plurality of terminals are provided at positions corresponding to each other on opposite side surfaces of the package component,
The bus bar has the same shape as the terminal .
Semiconductor device.
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