JP5200453B2 - Solid content collection device and solid matter collection method using the collection device - Google Patents
Solid content collection device and solid matter collection method using the collection device Download PDFInfo
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- 239000007787 solid Substances 0.000 title claims description 44
- 238000000034 method Methods 0.000 title claims description 13
- 238000001312 dry etching Methods 0.000 claims description 15
- 238000005192 partition Methods 0.000 claims description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 38
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011343 solid material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- -1 polytetrafluoroethylene, tetrafluoroethylene Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229920001038 ethylene copolymer Polymers 0.000 description 2
- 239000008235 industrial water Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- QHMQWEPBXSHHLH-UHFFFAOYSA-N sulfur tetrafluoride Chemical compound FS(F)(F)F QHMQWEPBXSHHLH-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- LSJNBGSOIVSBBR-UHFFFAOYSA-N thionyl fluoride Chemical compound FS(F)=O LSJNBGSOIVSBBR-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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- Filtering Materials (AREA)
- Filtering Of Dispersed Particles In Gases (AREA)
- Drying Of Semiconductors (AREA)
Description
本発明は、半導体製造装置や液晶製造装置等から排出される固形物含有ドライエッチング排ガスを処理するために適した固形分捕集装置及び当該処理装置を用いた固形物の捕集方法に関する。 The present invention relates to a solid content collection apparatus suitable for treating solid-containing dry etching exhaust gas discharged from a semiconductor production apparatus, a liquid crystal production apparatus, or the like, and a solid collection method using the treatment apparatus.
従来、半導体や液晶の製造プロセスなどにおいて排出される、排ガス中の反応生成物である固形物を含有するドライエッチング排ガス中の固形分捕集装置及び当該捕集装置を用いた固形物の捕集方法としては、例えば、固形物を捕集する各種フィルターユニットを用いて、エッチング排ガスから固形物を除去する方法が開示されている（例えば、特許文献１参照）。しかしながら、この方法においては、装置自体が複雑な上に、フィルターの目詰まりや捕集量が完全には改善できていないという問題点があり、好適なドライエッチング排ガスの固形物捕集装置としては満足できるものではなかった。
本発明の課題は、即ち、上記問題点を解決し、固形物を含有するドライエッチング排ガスの簡便且つ安全な処理をするために適した固形物捕集装置及び当該捕集装置を用いた固形物含有の捕集方法を提供することにある。 An object of the present invention is to solve the above-mentioned problems, and to collect a solid matter collecting apparatus suitable for simple and safe treatment of dry etching exhaust gas containing solid matter, and a solid substance using the collecting device. It is in providing the collection method of containing.
本発明の課題は、フィルター及び冷却器を備えた固形物含有ドライエッチング排ガスの固形物捕集装置及び当該捕集装置を用いた固形物の捕集方法によって解決される。 The object of the present invention is solved by a solid matter collecting device for a solid-containing dry etching exhaust gas equipped with a filter and a cooler, and a solid matter collecting method using the collecting device.
本発明により、半導体製造装置や液晶製造装置等から排出される固形物含有ドライエッチング排ガス中の固形物を捕集するために適した固形物捕集装置及び当該捕集装置を用いた固形物含有の捕集方法を提供することができる。 According to the present invention, a solid matter collecting device suitable for collecting solid matter in a solid-containing dry etching exhaust gas discharged from a semiconductor production device, a liquid crystal production device, or the like, and a solid matter content using the collection device A collection method can be provided.
本発明の固形物捕集装置は、フィルター及び冷却器を備えた装置であるが、
（１）好ましくはガス導入口及びガス導出口が、捕集装置の上部に備えられている
（２）更に好ましくはそれに冷却器が捕集装置の側面に備えられている
（３）特に好ましくはそれにフィルターがガス導出口に備えられている
ことを構造上の特徴として有するものである。
The solid matter collection device of the present invention is a device equipped with a filter and a cooler,
(1) Preferably a gas inlet and a gas outlet are provided at the top of the collection device (2) More preferably, a cooler is provided on the side of the collection device (3) Particularly preferably In addition, a structural feature is that a filter is provided at the gas outlet.
本発明の容器の形状は、特に限定されないが、例えば、円筒形、三角筒形、四角筒形、六角筒形等が挙げられるが、好ましくは四角筒形のものが使用される。 Although the shape of the container of this invention is not specifically limited, For example, a cylindrical shape, a triangular cylinder shape, a square cylinder shape, a hexagonal cylinder shape etc. are mentioned, Preferably the thing of a square cylinder shape is used.
前記容器の容量は、特に制限されないが、実用的なことを考えると、好ましくは50〜500L、更に好ましくは50〜200Lであり、容器の材質は、酸に対して腐食しがたいものが使用されるが、好ましくはインコネル、ハステロイ、ステンレス鋼が使用され、市販されている一般規格としては、例えば、SUS304、SUS316等が通常使用され得る。 The capacity of the container is not particularly limited, but in consideration of practical use, the capacity is preferably 50 to 500 L, more preferably 50 to 200 L, and the container material used is resistant to acid corrosion. However, Inconel, Hastelloy, and stainless steel are preferably used, and as a general standard that is commercially available, for example, SUS304, SUS316, or the like can be used.
本発明のフィルターは、好ましくはバグフィルター（円筒状の織布または不織布製の濾布）であり、その素材としては、固形物の目詰まりが少なく、又、酸性ガス、ハロゲンガス等による耐腐食性に優れるものであり、例えば、ポリテトラフルオロエチレン、テトラフルオロエチレン・パーフルオロアルキルビニルエーテル共重合体、テトラフルオロエチレン・ヘキサフルオロプロピレン共重合体、テトラフルオロエチレン・エチレン共重合体、ポリビニリデンフルオライド、ポリクロロトリフルオロエチレン又はクロロトリフルオエチレン・エチレン共重合体等が好適に使用される（例えば、テフロン（登録商標）製が好適に用いられる）。 The filter of the present invention is preferably a bag filter (cylindrical woven or non-woven filter cloth), the material of which is less clogged with solids, and is resistant to corrosion by acid gas, halogen gas, etc. For example, polytetrafluoroethylene, tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer, tetrafluoroethylene / hexafluoropropylene copolymer, tetrafluoroethylene / ethylene copolymer, polyvinylidene fluoride Polychlorotrifluoroethylene or chlorotrifluoroethylene / ethylene copolymer is preferably used (for example, a product made of Teflon (registered trademark) is preferably used).
前記フィルターの目開きは、固形物の大きさにも寄るが、好ましくは10〜100μm、更に好ましくは20〜50μmである。又、口径は、導入されるガス量（固形物量にも依存する）にも寄るが、好ましくは直径30〜300mm、更に好ましくは50〜100mmであり、その長さは、容器底部に接触しなければ特に制限されない。 The aperture of the filter is preferably 10 to 100 μm, more preferably 20 to 50 μm, although it depends on the size of the solid matter. The diameter also depends on the amount of gas introduced (depending on the amount of solids), but preferably has a diameter of 30 to 300 mm, more preferably 50 to 100 mm, and its length must be in contact with the bottom of the container. There is no particular limitation.
フィルターの数は、導入させるガス量と固形物の量にも寄るが、好ましくは４〜３０本、更に好ましくは４〜１５本、特に好ましくは４〜９本である。 The number of filters depends on the amount of gas to be introduced and the amount of solids, but is preferably 4 to 30, more preferably 4 to 15, and particularly preferably 4 to 9.
本発明のドライエッチング排ガスとは、半導体製造装置又は液晶製造装置等から排出されるドライエッチング排ガスを示すが、例えば、フッ化水素、サルファーテトラフルオライド、テトラフルオロシラン、ジフルオロスルホキサイド等のフッ素化合物ガス；塩素、塩化水素、三塩化ホウ素、テトラクロロシラン等の塩素化合物ガス；臭化水素、三臭化ホウ素等の臭素化合物が挙げられる。なお、これらのドライエッチング排ガスは、例えば、窒素、アルゴン、ヘリウム等の不活性ガスで希釈されていても構わない。 The dry etching exhaust gas of the present invention refers to a dry etching exhaust gas discharged from a semiconductor manufacturing apparatus or a liquid crystal manufacturing apparatus. For example, fluorine such as hydrogen fluoride, sulfur tetrafluoride, tetrafluorosilane, difluorosulfoxide, etc. Compound gas; chlorine compound gas such as chlorine, hydrogen chloride, boron trichloride, tetrachlorosilane; bromine compound such as hydrogen bromide, boron tribromide, etc. Note that these dry etching exhaust gases may be diluted with an inert gas such as nitrogen, argon, or helium.
又、固形物は当該排ガスと同伴されて排出され、例えば、塩化アルミニウム、塩化チタン、塩化タングステン等の金属塩化物；フッ化タンタル、フッ化チタン等の金属フッ化物；ホウ酸等のホウ素化合物；二酸化ケイ素等の金属酸化物；水酸化アルミニウム等の金属水酸化物が挙げられる。
本発明の固形分捕集装置においては、排ガス導入ガスとフィルターを遮断する仕切り板を設けた方が望ましい。なお仕切り板は、側面の冷却器と導入排ガスとの接触を高める（冷却効率を高める）ために設けられる。
Solids are discharged with the exhaust gas, for example, metal chlorides such as aluminum chloride, titanium chloride and tungsten chloride; metal fluorides such as tantalum fluoride and titanium fluoride; boron compounds such as boric acid; Metal oxides such as silicon dioxide; metal hydroxides such as aluminum hydroxide.
In the solid content collection device of the present invention, it is desirable to provide a partition plate for blocking the exhaust gas introduction gas and the filter. In addition, a partition plate is provided in order to improve the contact between the cooler on the side surface and the introduced exhaust gas (increase the cooling efficiency).
本発明の固形物捕集装置において冷却器は、捕集装置の側面に備えられているが、冷却手段としては、40℃以下に冷却できるものならば特に限定されないが、工業的な実用性を考えると水（工業用水でも良い）による冷却（水を流通させる）が好適に行われる。
水によって冷却する場合には、その水流速度は装置の大きさにより適宜調節するが、好ましくは1〜10L/min.、更に好ましくは2〜5L/min.である。
In the solids collection device of the present invention, the cooler is provided on the side of the collection device, but the cooling means is not particularly limited as long as it can be cooled to 40 ° C. or less, but has industrial practicality. Considering this, cooling (water is circulated) with water (which may be industrial water) is suitably performed.
In the case of cooling with water, the water flow rate is appropriately adjusted depending on the size of the apparatus, but is preferably 1 to 10 L / min., More preferably 2 to 5 L / min.
本発明の固形物捕集装置は、フィルター及び冷却器を備えた装置であるが、
（１）好ましくはガス導入口及びガス導出口が、捕集装置の上部に備えられている
（２）更に好ましくはそれに冷却器が捕集装置の側面に備えられている
（３）特に好ましくはそれにフィルターがガス導出口に備えられている
装置である。
The solid matter collection device of the present invention is a device equipped with a filter and a cooler,
(1) Preferably a gas inlet and a gas outlet are provided at the top of the collection device (2) More preferably, a cooler is provided on the side of the collection device (3) Particularly preferably In addition, a filter is provided at the gas outlet.
本発明の固形物捕集装置における固形物の捕集方法としては、例えば、ガス導入口及びガス導出口が装置の上部に、冷却器が装置の側面に、フィルターがガス導出口に備えられている固形物捕集装置に、固形物を含有するエッチング排ガスを導入する等の方法によって行われる。その際の処理温度は、好ましくは0〜50℃、更に好ましくは0〜30℃、圧力は特に制限されないが、容器の材質等によって適宜調節すべきである。なお、ドライエッチング排ガスの供給流量は、好ましくは毎分1〜500L、更に好ましくは毎分5〜200Lである。 As a solid collection method in the solid collection device of the present invention, for example, a gas inlet and a gas outlet are provided at the top of the device, a cooler is provided on the side of the device, and a filter is provided at the gas outlet. It is carried out by a method such as introducing an etching exhaust gas containing solids into a solid collection device. The treatment temperature at that time is preferably 0 to 50 ° C., more preferably 0 to 30 ° C., and the pressure is not particularly limited, but should be appropriately adjusted depending on the material of the container. The supply flow rate of the dry etching exhaust gas is preferably 1 to 500 L / min, more preferably 5 to 200 L / min.
なお、排ガス導入口の配管は、ヒーター等により適宜加熱されるが、工業的には60〜120℃に加熱するのが望ましい。 In addition, although the piping of the exhaust gas inlet is appropriately heated by a heater or the like, it is desirably industrially heated to 60 to 120 ° C.
次に、実施例を挙げて本発明を具体的に説明するが、本発明の範囲はこれらに限定されるものではない。 Next, the present invention will be specifically described with reference to examples, but the scope of the present invention is not limited thereto.
実施例１（ドライエッチング排ガス含有固形物の捕集能力と安全性）
図１に示す冷却器及びバグフィルターを装着した固形物捕集装置を液晶製造用アルミニウム基板エッチング工程の後工程に設置し、排出される三塩化アルミニウムを主成分とする固形物を含むドライエッチング排ガスから固体物の捕集を行った。固形物捕集装置入口配管及びこれ以前の配管は100℃に加熱しており、配管での固形物堆積を防止した。又、冷却器は冷却水循環方式を用い、水は工場内の工業用水を使用した。バグフィルターは、材質はテフロン（登録商標）製で、目開きは20〜50μm、口径は直径80mmのものを９本使用した。この操作を数回繰り返したところ、固形物捕集量は15kg〜20kgで、捕集期間は23日〜30日であった。なお、捕集の間、配管及び捕集装置内の固形物閉塞はなく、圧力損失が少なく安全且つ安定して固形物の捕集ができた。
Example 1 (Capability and safety of solid material containing dry etching exhaust gas)
1 is installed in the subsequent step of the etching process of the aluminum substrate for liquid crystal production, and the dry etching exhaust gas containing solids mainly composed of aluminum trichloride is discharged. The solid was collected from The solid material collection device inlet piping and the previous piping were heated to 100 ° C. to prevent solids accumulation in the piping. Moreover, the cooling device used the cooling water circulation system, and the water used the industrial water in a factory. The bag filter was made of Teflon (registered trademark), 9 openings having a diameter of 20 to 50 μm, and a diameter of 80 mm. When this operation was repeated several times, the amount of collected solids was 15 kg to 20 kg, and the collection period was 23 days to 30 days. In addition, there was no obstruction | occlusion of the solid substance in piping and a collection apparatus during collection, and the solid substance could be collected safely and stably with little pressure loss.
本発明により、半導体製造装置や液晶製造装置等から排出される固形物含有ドライエッチング排ガスを処理するために適した固形分捕集装置及び当該処理装置を用いた固形物の捕集方法を提供することができる。 According to the present invention, there are provided a solid content collection device suitable for treating a solid-containing dry etching exhaust gas discharged from a semiconductor production device, a liquid crystal production device, or the like, and a solid matter collection method using the treatment device. be able to.
１ 排ガス導入口
２ 冷却水導入口（導出口）
３ 冷却器
４ 仕切り板
５ バグフィルター
６ 排ガス導出口
1 Exhaust gas inlet 2 Cooling water inlet (outlet)
3 Cooler 4 Partition plate 5
Claims (3)
A solid collection method using the solid-containing dry etching exhaust gas treatment apparatus according to claim 1.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2007219398A JP5200453B2 (en) | 2007-08-27 | 2007-08-27 | Solid content collection device and solid matter collection method using the collection device |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2007219398A JP5200453B2 (en) | 2007-08-27 | 2007-08-27 | Solid content collection device and solid matter collection method using the collection device |
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| Publication Number | Publication Date |
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| JP2009050786A JP2009050786A (en) | 2009-03-12 |
| JP5200453B2 true JP5200453B2 (en) | 2013-06-05 |
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| JP2007219398A Expired - Fee Related JP5200453B2 (en) | 2007-08-27 | 2007-08-27 | Solid content collection device and solid matter collection method using the collection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2013167364A (en) * | 2010-05-28 | 2013-08-29 | Kinotech Solar Energy Corp | Dust collection device and dust collection method |
| JP6032496B2 (en) * | 2013-12-06 | 2016-11-30 | 住友金属鉱山株式会社 | Method for producing selenium from copper electrolytic slime |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04260408A (en) * | 1991-02-13 | 1992-09-16 | Mitsui Eng & Shipbuild Co Ltd | Bag filter device with gas cooling function |
| JP3433998B2 (en) * | 1994-02-03 | 2003-08-04 | 関東電化工業株式会社 | Filtration apparatus and vacuum pump system protection method using the same |
| JP2002031326A (en) * | 2000-05-12 | 2002-01-31 | Takuryu Kinzoku:Kk | Flue gas treating device for combustion furnace |
| WO2005064649A2 (en) * | 2003-12-23 | 2005-07-14 | Schumacher John C | Exhaust conditioning system for semiconductor reactor |
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| JP2009050786A (en) | 2009-03-12 |
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