JP5198989B2 - Conductor connection device for gas insulated power equipment - Google Patents
Conductor connection device for gas insulated power equipment Download PDFInfo
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- JP5198989B2 JP5198989B2 JP2008236038A JP2008236038A JP5198989B2 JP 5198989 B2 JP5198989 B2 JP 5198989B2 JP 2008236038 A JP2008236038 A JP 2008236038A JP 2008236038 A JP2008236038 A JP 2008236038A JP 5198989 B2 JP5198989 B2 JP 5198989B2
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
- H02G5/00—Installations of bus-bars
- H02G5/06—Totally-enclosed installations, e.g. in metal casings
- H02G5/066—Devices for maintaining distance between conductor and enclosure
- H02G5/068—Devices for maintaining distance between conductor and enclosure being part of the junction between two enclosures
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- Gas-Insulated Switchgears (AREA)
- Installation Of Bus-Bars (AREA)
Description
本発明は、接地容器内に絶縁ガスを封入すると共に導体を収容し、導体を接地容器から浮かせた状態で支持するガス絶縁電力機器の導体接続装置に関する。 The present invention relates to a conductor connection device for a gas-insulated power device that encloses an insulating gas in a ground container, accommodates a conductor, and supports the conductor in a state of floating from the ground container.
近年、環境問題に対する関心が高まっており、ガス絶縁開閉装置やガス絶縁送電線路等のガス絶縁電力機器の主絶縁媒体であるＳＦ６ガスが地球温暖化ガスとして注目されている。このため、ＳＦ６代替ガス絶縁の研究がなされている。ＳＦ６代替ガスはＳＦ６ガスに比べて絶縁性能に劣ることから、導体を固体絶縁物で被覆することが研究されている。 In recent years, interest in environmental problems has increased, and SF 6 gas, which is the main insulating medium of gas-insulated power equipment such as gas-insulated switchgear and gas-insulated power transmission lines, has attracted attention as a global warming gas. For this reason, studies have been made on SF 6 alternative gas insulation. Since SF 6 substitute gas is inferior in insulation performance to SF 6 gas, it has been studied to coat a conductor with a solid insulator.
しかしながら、導体を固体絶縁物で被覆する場合、導体の接続部分で被覆に接触界面が生じる。ここで、固体絶縁物の被覆に接触界面が発生しないように導体の接続部分も含めて全ての部分に連続して被覆を施すことも考えられる。しかしながら、導体の熱伸縮、被覆の長期信頼性、施工性、将来のタンク（接地容器）開放の可能性等を考慮すると、導体の接続にコネクタ導体を使用することが好ましい。そのため、固体絶縁物の被覆を全ての部分で連続したものにすることは困難あり、接触界面が生じてしまうことから絶縁耐圧を十分に大きくすることが困難である。 However, when the conductor is coated with a solid insulator, a contact interface is formed on the coating at the connection portion of the conductor. Here, it is also conceivable to continuously coat all the portions including the conductor connecting portion so that the contact interface does not occur in the coating of the solid insulator. However, considering the thermal expansion and contraction of the conductor, the long-term reliability of the coating, the workability, the possibility of opening the tank (grounding container) in the future, it is preferable to use a connector conductor for connecting the conductor. Therefore, it is difficult to make the coating of the solid insulator continuous in all parts, and since a contact interface is generated, it is difficult to sufficiently increase the withstand voltage.
本発明は、絶縁耐圧を大きくすることができるガス絶縁電力機器の導体接続装置を提供することを目的とする。 An object of this invention is to provide the conductor connection apparatus of the gas insulated power equipment which can make a withstand voltage large.
かかる目的を達成するために、請求項１記載のガス絶縁電力機器の導体接続装置は、絶縁ガスが封入された接地容器内に収容された導体を接続するコネクタ導体の外周面を覆う固体絶縁物本体と、導体の少なくとも端部外周面を被覆し、端面がコネクタ導体又は固体絶縁物本体との間で接触界面となる固体絶縁物被覆と、固体絶縁物本体に設けられ、固体絶縁物被覆を囲んで接地容器と固体絶縁物被覆の端面の接触界面との間の沿面長を延長させる筒状部を備え、筒状部と固体絶縁物被覆との間には、接触界面を排除するギャップが設けられているものである。 In order to achieve this object, the conductor connection device for a gas-insulated power device according to claim 1 is a solid insulator that covers the outer peripheral surface of a connector conductor that connects a conductor housed in a ground container filled with an insulating gas. A solid insulation coating that covers at least the outer peripheral surface of the main body and the conductor, and the end surface is a contact interface between the connector conductor or the solid insulation main body, and the solid insulation main body, A cylindrical portion is provided to extend a creeping length between the grounding container and the contact interface of the end surface of the solid insulator coating, and a gap that excludes the contact interface is provided between the cylindrical portion and the solid insulator coating. It is provided.
導体に固体絶縁物被覆を施すことで、仮に、接地容器と導体との間に絶縁破壊が生じるとしたら固体絶縁物被覆の端面の接触界面に沿って絶縁破壊が生じることになる。固体絶縁物本体に筒状部を設けることで、接地容器と固体絶縁物被覆の端面の接触界面との間の沿面長を延長することができる。また、筒状部を設けることで、接地容器と固体絶縁物被覆との間よりも接地容器と筒状部との間に絶縁破壊が生じやすくなるので、固体絶縁物被覆を設ける範囲が狭まる。 If a dielectric breakdown occurs between the ground container and the conductor by applying the solid insulator coating to the conductor, the dielectric breakdown occurs along the contact interface of the end surface of the solid insulator coating. By providing the cylindrical portion on the solid insulator main body, the creepage length between the ground container and the contact interface between the end faces of the solid insulator coating can be extended. Further, by providing the cylindrical portion, dielectric breakdown is more likely to occur between the ground container and the cylindrical portion than between the ground container and the solid insulator coating, so that the range for providing the solid insulator coating is narrowed.
ここで、請求項２記載のガス絶縁電力機器の導体接続装置のように、固体絶縁物本体が、導体の接続部分を支持する絶縁スペーサ、又は導体を接続する絶縁コネクタであることが好ましい。 Here, it is preferable that the solid insulator main body is an insulating spacer that supports the connecting portion of the conductor or an insulating connector that connects the conductor, as in the conductor connecting device of the gas-insulated power device according to the second aspect.
また、請求項３記載のガス絶縁電力機器の導体接続装置のように、筒状部は 固体絶縁体によって成形されたシースでも良く、請求項４記載のガス絶縁電力機器の導体接続装置のように、筒状部にシールド電極が埋め込まれていても良い。 Further, the tubular part may be a sheath formed of a solid insulator as in the conductor connection device of a gas insulated power device according to claim 3, and as in the conductor connection device of a gas insulated power device according to claim 4. The shield electrode may be embedded in the cylindrical portion.
さらに、請求項５記載のガス絶縁電力機器の導体接続装置は、筒状部の内周面と、固体絶縁物被覆の外周面の筒状部に臨む部分とのうち、少なくともいずれか一方に周方向に環状の突部が設けられている。したがって、接地容器と固体絶縁物被覆の端面の接触界面との間の沿面長がより一層長くなる。また、仮に接地容器と固体絶縁物被覆の端面の接触界面との間に絶縁破壊が生じるとすると、その放電が突部を乗り越えることが逆電界となる。 Furthermore, the conductor connection device for a gas-insulated power device according to claim 5 is provided so that at least one of the inner peripheral surface of the cylindrical portion and the portion of the outer peripheral surface of the solid insulator coating facing the cylindrical portion is surrounded. An annular protrusion is provided in the direction. Accordingly, the creepage length between the ground container and the contact interface between the end faces of the solid insulator coating is further increased. Further, if a dielectric breakdown occurs between the ground container and the contact interface between the end faces of the solid insulator coating, the reverse electric field is that the discharge over the protrusion.
請求項１記載のガス絶縁電力機器の導体接続装置では、筒状部によって接地容器と固体絶縁物被覆の端面の接触界面との間の沿面長を延長することができるので、その分だけ絶縁耐圧を大きくすることができる。また、筒状部と固体絶縁物被覆との間にギャップを設けているので、筒状部と固体絶縁物被覆との間に接触界面が存在することがなく、接触界面のボイド等に起因した電界集中を防止することができ、絶縁耐圧の低下を防止することができる。したがって、ガス絶縁電力機器の大型化を招かずにＳＦ６よりも絶縁性能に劣る絶縁ガスの使用が可能になる。また、絶縁ガスとしてＳＦ６を使用する場合には、ガス絶縁電力機器を小型化することができる。さらに、筒状部によって沿面長を増加させているので、筒状部の長さを変えることで沿面長の増加を調節することができ、その調節が容易である。 In the conductor connection device for a gas insulated power device according to claim 1, since the creeping length between the ground container and the contact interface of the end face of the solid insulator coating can be extended by the cylindrical portion, the dielectric breakdown voltage is increased accordingly. Can be increased. In addition, since a gap is provided between the cylindrical portion and the solid insulator coating, there is no contact interface between the cylindrical portion and the solid insulator coating, which is caused by voids in the contact interface. Electric field concentration can be prevented, and a reduction in withstand voltage can be prevented. Therefore, it is possible to use an insulating gas that is inferior in insulation performance to that of SF 6 without increasing the size of the gas-insulated power device. Further, when SF 6 is used as the insulating gas, the gas-insulated power device can be reduced in size. Furthermore, since the creeping length is increased by the cylindrical portion, the increase of the creeping length can be adjusted by changing the length of the cylindrical portion, and the adjustment is easy.
また、請求項２記載のガス絶縁電力機器の導体接続装置では、導体の接続部分を支持する絶縁スペーサ又は導体を接続する絶縁コネクタを利用して絶縁耐圧を増加させることができる。 In the conductor connection device for a gas-insulated power device according to the second aspect, the withstand voltage can be increased by using an insulating spacer that supports the connecting portion of the conductor or an insulating connector that connects the conductor.
また、請求項３記載のガス絶縁電力機器の導体接続装置のように、筒状部は 固体絶縁体によって成形されたシースでも良く、請求項４記載のガス絶縁電力機器の導体接続装置のように、筒状部にシールド電極が埋め込まれていても良い。 Further, the tubular part may be a sheath formed of a solid insulator as in the conductor connection device of a gas insulated power device according to claim 3, and as in the conductor connection device of a gas insulated power device according to claim 4. The shield electrode may be embedded in the cylindrical portion.
さらに、請求項５記載のガス絶縁電力機器の導体接続装置では、突部によって接地容器と固体絶縁物被覆の端面の接触界面との間の沿面長をより一層長くできると共に、仮に絶縁破壊が生じるとすると逆電界となる部分を作ることができるので、絶縁破壊をより一層生じ難くすることができる。 Furthermore, in the conductor connection device for a gas-insulated power apparatus according to claim 5, the creeping length between the ground container and the contact interface between the end faces of the solid insulator coating can be further increased by the protrusions, and the dielectric breakdown temporarily occurs. As a result, a portion serving as a reverse electric field can be formed, so that dielectric breakdown can be further prevented.
以下、本発明の構成を図面に示す最良の形態に基づいて詳細に説明する。 Hereinafter, the configuration of the present invention will be described in detail based on the best mode shown in the drawings.
図１に本発明のガス絶縁電力機器の導体接続装置の実施形態の一例を示す。ガス絶縁電力機器の導体接続装置（以下、単に導体接続装置という）は、絶縁ガス１が封入された接地容器２内に収容された導体３を接続するコネクタ導体４の外周面を覆う固体絶縁物本体５と、導体３の少なくとも端部３ａ外周面を被覆し、端面がコネクタ導体４又は固体絶縁物本体５との間で接触界面６ａとなる固体絶縁物被覆６と、固体絶縁物本体５に設けられ、固体絶縁物被覆６を囲んで接地容器２と固体絶縁物被覆６の端面の接触界面６ａとの間の沿面長を延長させる筒状部７を備え、筒状部７と固体絶縁物被覆６との間には、接触界面を排除するギャップ８が設けられている。 FIG. 1 shows an example of an embodiment of a conductor connection device for a gas insulated power device according to the present invention. A conductor connection device (hereinafter simply referred to as a conductor connection device) of a gas-insulated power device is a solid insulator that covers an outer peripheral surface of a connector conductor 4 that connects a conductor 3 housed in a grounding container 2 in which an insulating gas 1 is sealed. The solid insulator coating 6 that covers at least the outer peripheral surface of the main body 5 and the conductor 3 and the end surface serves as the contact interface 6a between the connector conductor 4 or the solid insulator main body 5 and the solid insulator main body 5 A cylindrical portion 7 is provided which surrounds the solid insulator coating 6 and extends the creeping length between the ground container 2 and the contact interface 6a at the end surface of the solid insulator coating 6, and the cylindrical portion 7 and the solid insulator A gap 8 is provided between the coating 6 and the contact interface.
本実施形態の導体接続装置は、導体３の端面同士を接続する絶縁コネクタ９である。ただし、絶縁コネクタ９に限るものではなく、導体３を接続するものであれば例えば絶縁スペーサ１０等にも適用可能である。 The conductor connection device of the present embodiment is an insulating connector 9 that connects the end faces of the conductor 3. However, the present invention is not limited to the insulating connector 9 and can be applied to, for example, the insulating spacer 10 as long as the conductor 3 is connected.
ガス絶縁電力機器は、例えばガス絶縁開閉装置（ＧＩＳ：Gas-Insulated Switchgear）、ガス絶縁送電線路（ＧＩＬ：Gas-Insulated Line）等のガス絶縁電力機器である。ただし、これらに限るものではない。本実施形態では、ＧＩＳを例に説明する。 The gas-insulated power device is a gas-insulated power device such as a gas-insulated switchgear (GIS) or a gas-insulated transmission line (GIL). However, it is not limited to these. In this embodiment, GIS will be described as an example.
接地容器２は例えばＧＩＳの接地タンクであり、その内部には絶縁ガス１が封入されている。絶縁ガス１としては、例えばＮ２ガス、ＣＯ２ガス等の使用が可能である。ただし、絶縁ガス１としてはＮ２ガス、ＣＯ２ガスに限るものではなく、例えばＳＦ６ガス、その他の絶縁ガスの使用が可能である。導体３はコネクタ導体４によって接続され、図示しない絶縁スペーサによって接地容器２から浮かせた状態で支持されている。コネクタ導体４としては、例えば金属接触子を用いた差し込み方式のものの使用が可能である。ただし、他の方式でも良い。 The grounding container 2 is, for example, a GIS grounding tank, and an insulating gas 1 is sealed therein. As the insulating gas 1, for example, N 2 gas, CO 2 gas, or the like can be used. However, the insulating gas 1 is not limited to N 2 gas and CO 2 gas, and for example, SF 6 gas and other insulating gases can be used. The conductor 3 is connected by a connector conductor 4 and is supported in a state of being floated from the ground container 2 by an insulating spacer (not shown). As the connector conductor 4, for example, a plug-in type using a metal contact can be used. However, other methods may be used.
固体絶縁物本体５は、例えばエポキシ樹脂、ポリエチレン等の固体絶縁材料から成る筒体であり、コネクタ導体４の外周面を覆っている。 The solid insulator main body 5 is a cylindrical body made of a solid insulating material such as epoxy resin or polyethylene, and covers the outer peripheral surface of the connector conductor 4.
固体絶縁物被覆６は、例えばエポキシ樹脂、ポリエチレン等の固体絶縁材料から成る被覆である。本実施形態では、導体３の外周面を全長にわたり被覆している。ただし、導体３の外周面を全長にわたり被覆する必要はなく、少なくとも端部３ａ、即ち接地容器２と導体３との間に絶縁破壊が生じる場合において、固体絶縁物被覆６の端面の接触界面６ａと筒状部７の先端との間の沿面長をＬ１、固体絶縁物被覆６の接触界面６ａとは反対側の端と筒状部７の先端との間の沿面長をＬ２とした場合、Ｌ１≦Ｌ２となる範囲、又はＬ１＞Ｌ２であってもＬ１とＬ２との差が僅かになるような範囲に固体絶縁物被覆６を設ければ足りる。即ち、導体３の全長に固体絶縁物被覆６を設けることで接地容器２と導体３との間の絶縁耐圧を導体３の全長にわたって増加させることができるが、絶縁コネクタ９を設けた場合、この部分が絶縁耐圧の小さな部位となるので、この部分の絶縁耐圧を大きくする必要がある。導体３の少なくとも端部３ａに固体絶縁物被覆６を施すことで、少なくとも絶縁耐圧を大きくすべき部位について絶縁耐圧を大きくすることができる。本実施形態では、導体３の外径とコネクタ導体４の外径は同一であり、固体絶縁物被覆６の端面の接触界面６ａは固体絶縁物本体５との間に形成される。 The solid insulator coating 6 is a coating made of a solid insulating material such as epoxy resin or polyethylene. In this embodiment, the outer peripheral surface of the conductor 3 is covered over the entire length. However, it is not necessary to cover the outer peripheral surface of the conductor 3 over the entire length, and at least when the dielectric breakdown occurs between the end portion 3 a, that is, the ground container 2 and the conductor 3, the contact interface 6 a of the end surface of the solid insulator coating 6. When the creepage length between the tip of the cylindrical portion 7 and the tip of the cylindrical portion 7 is L1, the creepage length between the end opposite to the contact interface 6a of the solid insulator coating 6 and the tip of the cylindrical portion 7 is L2. It is sufficient to provide the solid insulator coating 6 in a range where L1 ≦ L2 or a range where the difference between L1 and L2 becomes small even if L1> L2. That is, by providing the solid insulator coating 6 over the entire length of the conductor 3, the withstand voltage between the ground container 2 and the conductor 3 can be increased over the entire length of the conductor 3, but when the insulating connector 9 is provided, Since this portion is a portion having a small withstand voltage, it is necessary to increase the withstand voltage of this portion. By applying the solid insulator coating 6 to at least the end portion 3a of the conductor 3, it is possible to increase the withstand voltage at least at a portion where the withstand voltage should be increased. In this embodiment, the outer diameter of the conductor 3 and the outer diameter of the connector conductor 4 are the same, and the contact interface 6 a on the end face of the solid insulator coating 6 is formed between the solid insulator body 5 and the contact surface 6 a.
筒状部７は固体絶縁体によって成形されたシースであり、固体絶縁物本体５と一体成形されている。即ち、固体絶縁物本体５と同じ固体絶縁材料によって成形されている。筒状部７の横断面形状は、導体３の横断面形状と相似形になっている。本実施形態の導体３の横断面形状は円形であるので、筒状部７の横断面形状も円形になっている。筒状部７は導体３と同心円状に配置されている。筒状部７は固体絶縁物本体５の両面に形成され、接続する２本の導体３の軸線方向に形成されている。 The cylindrical portion 7 is a sheath formed of a solid insulator and is integrally formed with the solid insulator body 5. That is, it is formed of the same solid insulating material as the solid insulating body 5. The cross-sectional shape of the cylindrical portion 7 is similar to the cross-sectional shape of the conductor 3. Since the cross-sectional shape of the conductor 3 of this embodiment is circular, the cross-sectional shape of the cylindrical part 7 is also circular. The cylindrical portion 7 is arranged concentrically with the conductor 3. The cylindrical part 7 is formed on both surfaces of the solid insulator body 5 and is formed in the axial direction of the two conductors 3 to be connected.
ギャップ８は、固体絶縁物被覆６と筒状部７の間に全周にわたって設けられている。ギャップ８の距離（ギャップ長）は、固体絶縁物被覆６と筒状部７との間に電界集中が起こらない程度の距離となっている。即ち、ギャップ長が短いと、固体絶縁物被覆６と筒状部７との間に電界の集中を引き起こすので、この電界集中を実質的に影響のない程度まで抑えることができる距離Ｌ３のギャップ８が設けられている。なお、ギャップ長は距離Ｌ３以上であれば良いが、ギャップ長を増加させると、筒状部７と接地容器２との距離が短くなることから絶縁耐圧が減少する。このため、接地容器２との距離を考慮してギャップ長を決定することが好ましい。なお、適切なギャップ長は、筒状部７の長さ、電圧、絶縁ガス１の種類・濃度・圧力等によって変化するので、例えば実験や計算等を行って適宜決定することが好ましい。ギャップ長の一例としては、例えば５ｍｍである。ただし、５ｍｍに限るものではない。 The gap 8 is provided over the entire circumference between the solid insulator coating 6 and the cylindrical portion 7. The distance (gap length) of the gap 8 is such a distance that electric field concentration does not occur between the solid insulator coating 6 and the cylindrical portion 7. That is, if the gap length is short, an electric field concentration is caused between the solid insulator coating 6 and the cylindrical portion 7, so that the gap 8 having a distance L3 that can suppress the electric field concentration to a level that does not substantially affect the electric field concentration. Is provided. The gap length may be equal to or longer than the distance L3. However, if the gap length is increased, the distance between the cylindrical portion 7 and the grounding container 2 is shortened, so that the withstand voltage is reduced. For this reason, it is preferable to determine the gap length in consideration of the distance from the grounded container 2. Note that the appropriate gap length varies depending on the length, voltage, type, concentration, pressure, etc. of the insulating gas 1, and therefore, it is preferable to appropriately determine the gap length by, for example, experiments or calculations. An example of the gap length is 5 mm, for example. However, it is not limited to 5 mm.
次に、導体接続装置の作用について説明する。 Next, the operation of the conductor connection device will be described.
導体３に固体絶縁物被覆６を施すことで、接地容器２と導体３との間の絶縁耐圧を増加させることができる。この場合、固体絶縁物被覆６の端面の接触界面６ａが発生しないように導体３の接続部分も含めて全ての部分に連続した固体絶縁物被覆６を施すことも考えられる。しかしながら、導体３の熱伸縮、固体絶縁物被覆６の長期信頼性、施工性、将来のタンク（接地容器２）開放の可能性等を考慮すると、導体３の接続にコネクタ導体４を使用することが好ましい。そのため、固体絶縁物被覆６を全ての部分で連続したものにすることは困難あり、接触界面６ａが発生する。接触界面６ａが発生する場合、絶縁破壊は接触界面６ａを介して生じる可能性が高く、したがって、この部分での絶縁耐圧を大きくする必要がある。 By applying the solid insulator coating 6 to the conductor 3, the withstand voltage between the ground container 2 and the conductor 3 can be increased. In this case, it is also conceivable to apply the continuous solid insulator coating 6 to all portions including the connection portion of the conductor 3 so that the contact interface 6a at the end face of the solid insulator coating 6 does not occur. However, considering the thermal expansion and contraction of the conductor 3, the long-term reliability of the solid insulating coating 6, the workability, the possibility of opening the tank (grounding container 2) in the future, the connector conductor 4 should be used for the connection of the conductor 3. Is preferred. Therefore, it is difficult to make the solid insulator coating 6 continuous in all parts, and a contact interface 6a is generated. When the contact interface 6a occurs, it is highly possible that the dielectric breakdown occurs through the contact interface 6a. Therefore, it is necessary to increase the withstand voltage at this portion.
本発明の導体接続装置によって接触界面６ａを介して生じる絶縁破壊に対して絶縁耐圧を大きくすることができる。即ち、筒状部７を設けることで、接地容器２と接触界面６ａとの間に生じる放電の沿面長が増加するので、その分だけ絶縁耐圧を向上させることができる。また、筒状部７と固体絶縁物被覆６との間にギャップ８が設けられており、筒状部７と固体絶縁物被覆６との間に接触界面が存在することがないので、接触界面のボイド等に起因した電界集中を防止することができ、絶縁耐圧の低下を防止することができる。 With the conductor connecting device of the present invention, the withstand voltage can be increased against the dielectric breakdown that occurs through the contact interface 6a. That is, by providing the cylindrical portion 7, the creeping length of the discharge generated between the ground container 2 and the contact interface 6 a increases, so that the withstand voltage can be improved accordingly. In addition, since a gap 8 is provided between the cylindrical portion 7 and the solid insulator coating 6 and no contact interface exists between the cylindrical portion 7 and the solid insulator coating 6, the contact interface Electric field concentration caused by voids and the like can be prevented, and a decrease in withstand voltage can be prevented.
また、筒状部７の長さを変えることで沿面長の増加を調節することができるので、絶縁耐圧の大きさ調節が容易である。 In addition, since the increase in creepage length can be adjusted by changing the length of the cylindrical portion 7, the magnitude of the withstand voltage can be easily adjusted.
このように本発明の導体接続装置の使用によって絶縁耐圧を大きくすることができるので、絶縁ガス１として、ＳＦ６ガスよりも絶縁能力に劣るＮ２ガス、ＣＯ２ガス等の使用が可能になる。即ち、絶縁ガス１としてＮ２ガス、ＣＯ２ガス等を使用する場合には、ＳＦ６ガスを使用する場合に比べて圧力を高くする必要がある。例えば、０．５ＭＰａ（平均値）のＳＦ６ガスと同等の絶縁耐力を得るためには、Ｎ２ガス、ＣＯ２ガスの圧力を２．０ＭＰａまで上昇させる必要がある。ガス圧の増加により、接地容器２等の耐圧性を高めることが必要となり、ＧＩＳが実用的なものではなくなる。あるいは、接地容器２と導体３との距離を延長させる必要があり、ＧＩＳが大型化して実用的なものではなくなる。 As described above, since the withstand voltage can be increased by using the conductor connection device of the present invention, it is possible to use N 2 gas, CO 2 gas, or the like, which is inferior to SF 6 gas, as the insulating gas 1. . That is, when N 2 gas, CO 2 gas or the like is used as the insulating gas 1, it is necessary to increase the pressure as compared with the case where SF 6 gas is used. For example, in order to obtain a dielectric strength equivalent to 0.5 MPa (average value) SF 6 gas, it is necessary to increase the pressure of N 2 gas and CO 2 gas to 2.0 MPa. Due to the increase in gas pressure, it is necessary to increase the pressure resistance of the ground container 2 and the like, and the GIS is not practical. Alternatively, the distance between the ground container 2 and the conductor 3 needs to be extended, and the GIS becomes large and is not practical.
しかしながら、導体３に固体絶縁物被覆６を施し、本発明の導体接続装置を使用することで、絶縁耐圧を増加させることができるので、Ｎ２ガス、ＣＯ２ガスを使用する場合であってもＧＩＳを実用的なものにすることができる。逆に、同じ絶縁ガス１を使用する場合には、接地容器２を小型化することができ、ＧＩＳをよりコンパクトにすることができる。 However, since the dielectric breakdown voltage can be increased by applying the solid insulator coating 6 to the conductor 3 and using the conductor connection device of the present invention, even when N 2 gas or CO 2 gas is used. The GIS can be made practical. Conversely, when the same insulating gas 1 is used, the ground container 2 can be reduced in size, and the GIS can be made more compact.
なお、上述の形態は本発明の好適な形態の一例ではあるがこれに限定されるものではなく本発明の要旨を逸脱しない範囲において種々変形実施可能である。例えば、筒状部７にシールド電極１１を埋め込んでも良い。この場合の例を図２に示す。 The above-described embodiment is an example of a preferred embodiment of the present invention, but is not limited thereto, and various modifications can be made without departing from the scope of the present invention. For example, the shield electrode 11 may be embedded in the cylindrical portion 7. An example of this case is shown in FIG.
また、上述の説明では、導体３の外径とコネクタ導体４の外径を同一にしていたが、例えば図３に示すように、導体３の外径よりもコネクタ導体４の外径を小さくしても良い。また、図４に示すように、固体絶縁物被覆６の外径とコネクタ導体４の外径を同一にしても良い。 In the above description, the outer diameter of the conductor 3 and the outer diameter of the connector conductor 4 are the same. For example, as shown in FIG. 3, the outer diameter of the connector conductor 4 is made smaller than the outer diameter of the conductor 3. May be. Further, as shown in FIG. 4, the outer diameter of the solid insulator coating 6 and the outer diameter of the connector conductor 4 may be the same.
また、上述の説明では、導体接続装置を絶縁コネクタ９に適用していたが、適用可能なものとしては絶縁コネクタ９に限るものではなく、例えば絶縁スペーサ１０等にも適用可能である。図５に絶縁スペーサ１０に適用した例を示す。なお、この場合にも筒状部７にシールド電極１１を埋め込んでも良い。 In the above description, the conductor connecting device is applied to the insulating connector 9, but the applicable device is not limited to the insulating connector 9, and can be applied to, for example, the insulating spacer 10. FIG. 5 shows an example applied to the insulating spacer 10. In this case, the shield electrode 11 may be embedded in the cylindrical portion 7.
また、図６に示すように、筒状部７の近傍の固体絶縁物被覆６の外周面に沿面長を延長させる障害部材１２を設けても良い。この場合には上述のＬ２の沿面長をかせぐことができるので、固体絶縁物被覆６を導体３の全長にわたって設けない場合に、固体絶縁物被覆６を設ける範囲を狭くすることができる。 In addition, as shown in FIG. 6, an obstruction member 12 that extends the creeping length may be provided on the outer peripheral surface of the solid insulator coating 6 in the vicinity of the cylindrical portion 7. In this case, since the creepage length of the above-described L2 can be increased, when the solid insulator coating 6 is not provided over the entire length of the conductor 3, the range in which the solid insulator coating 6 is provided can be narrowed.
さらに、筒状部７の内周面７ａと、固体絶縁物被覆６の外周面の筒状部７に臨む部分６ｂとのうち、少なくともいずれか一方に周方向に環状の突部１８を設けても良い。筒状部７の内周面７ａと固体絶縁物被覆６の部分６ｂの両方に突部１８を設けた実施形態を図１６に示す。筒状部７側の突部１８（以下、固体絶縁物被覆６側の突部１８と区別する場合には突部１８Ａという）と固体絶縁物被覆６側の突部１８（以下、筒状部７側の突部１８Ａと区別する場合には突部１８Ｂという）は、導体３の軸線方向にずらして互い違いになるようにすることが好ましい。ただし、必ずしも突部１８Ａと突部１８Ｂを互い違いにしなくても良い。本実施形態では、例えば４つの突部１８Ａと４つの突部１８Ｂを互い違いに設けている。ただし、突部１８Ａ，１８Ｂの数は４つに限るものではなく、その他の個数でも良い。各突部１８Ａ，１８Ｂの横断面形状は例えば半円形状を成している。ただし、必ずしも突部１８Ａ，１８Ｂの横断面形状は半円形状に限るものではなく、他の形状でも良いが、角のない形状であることが好ましい。角部分が電界の特異点になるのを防止するためである。本実施形態では、筒状部７側の突部１８Ａは一つ一つ独立しており、固体絶縁物被覆６側の突部１８Ｂは一体化されている。ただし、筒状部７側の突部１８Ａを一体化させても良く、固体絶縁物被覆６側の突部１８Ｂを一つ一つ独立させても良い。突部１８Ａ，１８Ｂは、例えばエポキシ樹脂、ポリエチレン等の固体絶縁材料で形成されている。本実施形態では突部１８Ａを筒状部７と別に形成し、突部１８Ｂを固体絶縁物被覆６と別に形成しているが、突部１８Ａを筒状部７と一体成形し、突部１８Ｂを固体絶縁物被覆６と一体成形しても良い。突部１８Ａは筒状部７対して、突部１８Ｂ固体絶縁物被覆６に対して例えば接着剤によって固着されている。また、本実施形態では、突部１８Ａの内径と突部１８Ｂの外径を同一にしている。ただし、突部１８Ａの内径を突部１８Ｂの外径よりも大きくしても良いし、突部１８Ａの内径を突部１８Ｂの外径よりも小さくしても良い。 Further, an annular protrusion 18 is provided in the circumferential direction on at least one of the inner peripheral surface 7a of the cylindrical portion 7 and the portion 6b facing the cylindrical portion 7 on the outer peripheral surface of the solid insulator coating 6. Also good. An embodiment in which protrusions 18 are provided on both the inner peripheral surface 7a of the cylindrical portion 7 and the portion 6b of the solid insulator coating 6 is shown in FIG. A projection 18 on the cylindrical portion 7 side (hereinafter referred to as a projection 18A when distinguished from the projection 18 on the solid insulator coating 6 side) and a projection 18 on the solid insulator coating 6 side (hereinafter referred to as a cylindrical portion). It is preferable that the protrusions 18 </ b> B are distinguished from the 7-side protrusions 18 </ b> A by being shifted in the axial direction of the conductor 3. However, the protrusion 18A and the protrusion 18B are not necessarily staggered. In the present embodiment, for example, four protrusions 18A and four protrusions 18B are provided alternately. However, the number of protrusions 18A and 18B is not limited to four, and may be any other number. The cross-sectional shape of each protrusion 18A, 18B has a semicircular shape, for example. However, the cross-sectional shape of the protrusions 18A and 18B is not necessarily limited to a semicircular shape, and other shapes may be used, but a shape without corners is preferable. This is to prevent the corner portion from becoming a singular point of the electric field. In the present embodiment, the protrusions 18A on the cylindrical part 7 side are independent one by one, and the protrusions 18B on the solid insulator coating 6 side are integrated. However, the projections 18A on the cylindrical portion 7 side may be integrated, or the projections 18B on the solid insulator coating 6 side may be made independent one by one. The protrusions 18A and 18B are formed of a solid insulating material such as an epoxy resin or polyethylene. In this embodiment, the protrusion 18A is formed separately from the cylindrical portion 7, and the protrusion 18B is formed separately from the solid insulator coating 6. However, the protrusion 18A is integrally formed with the cylindrical portion 7, and the protrusion 18B. May be integrally formed with the solid insulator coating 6. The protrusion 18A is fixed to the protrusion 18B solid insulator coating 6 with respect to the cylindrical portion 7 by, for example, an adhesive. In the present embodiment, the inner diameter of the protrusion 18A and the outer diameter of the protrusion 18B are the same. However, the inner diameter of the protrusion 18A may be larger than the outer diameter of the protrusion 18B, or the inner diameter of the protrusion 18A may be smaller than the outer diameter of the protrusion 18B.
突部１８Ａを設けることで、筒状部７の内周面を伝わる接地容器２と接触界面６ａとの間の沿面長がより一層長くなり、突部１８Ｂを設けることで、固体絶縁物被覆６の外周面を伝わる接地容器２と接触界面６ａとの間の沿面長がより一層長くなる。また、仮に接地容器２と接触界面６ａとの間に絶縁破壊が生じるとすると、その放電が筒状部７の内周面に沿う場合には突部１８Ａを乗り越えることが逆電界となり、固体絶縁物被覆６の外周面に沿う場合には突部１８Ｂを乗り越えることが逆電界となる。これらのため、接地容器２と接触界面６ａとの間の絶縁破壊をより一層生じ難くすることができる。 By providing the protrusion 18A, the creepage length between the ground container 2 and the contact interface 6a that travels on the inner peripheral surface of the cylindrical portion 7 is further increased, and by providing the protrusion 18B, the solid insulator coating 6 is provided. The creepage length between the ground container 2 and the contact interface 6a that travels along the outer peripheral surface of the contact surface 6a is further increased. Further, if dielectric breakdown occurs between the ground container 2 and the contact interface 6a, when the discharge is along the inner peripheral surface of the cylindrical portion 7, overcoming the protrusion 18A becomes a reverse electric field, and solid insulation is caused. In the case of being along the outer peripheral surface of the object covering 6, overcoming the protrusion 18B becomes a reverse electric field. For these reasons, the dielectric breakdown between the ground container 2 and the contact interface 6a can be made more difficult to occur.
なお、上述の説明では、横断面形状が半円形状の突部１８を複数設けていたが、例えば図１７に示すように、傾斜面１８ｃを有する突部１８を設けても良い。本実施形態では、筒状部７側の突部１８Ａと固体絶縁物被覆６側の突部１８Ｂの両方を傾斜面１８ｃを有する突部にしている。ただし、突部１８Ａと突部１８Ｂの両方を傾斜面１８ｃを有するものにする必要はなく、例えば図１８に示すように、固体絶縁物被覆６側の突部１８Ｂのみを傾斜面１８ｃを有するものにしても良く、逆に筒状部７側の突部１８Ａのみを傾斜面１８ｃを有するものにしても良い。突部１８が傾斜面１８ｃを有するものの場合にも、接地容器２と接触界面６ａとの間の沿面長をより一層長くできると共に、仮に絶縁破壊が生じるとすると逆電界となる部分を作ることができるので、絶縁破壊をより一層生じ難くすることができる。 In the above description, a plurality of protrusions 18 having a semicircular cross-sectional shape are provided. However, for example, as shown in FIG. 17, a protrusion 18 having an inclined surface 18c may be provided. In the present embodiment, both the protruding portion 18A on the cylindrical portion 7 side and the protruding portion 18B on the solid insulator coating 6 side are protruding portions having inclined surfaces 18c. However, it is not necessary that both the protrusion 18A and the protrusion 18B have the inclined surface 18c. For example, as shown in FIG. 18, only the protrusion 18B on the solid insulator coating 6 side has the inclined surface 18c. Alternatively, only the protrusion 18A on the cylindrical portion 7 side may have the inclined surface 18c. Even in the case where the protrusion 18 has the inclined surface 18c, the creepage length between the ground container 2 and the contact interface 6a can be further increased, and if a dielectric breakdown occurs, a portion that becomes a reverse electric field can be formed. As a result, dielectric breakdown can be further prevented from occurring.
また、上述の説明では、筒状部７の内周面７ａと固体絶縁物被覆６の部分６ｂの両方に突部１８を設けていたが、必ずしも両方に設ける必要はなく、いずれか一方にのみ突部１８を設けるようにしても良い。即ち、筒状部７の内周面７ａと固体絶縁物被覆６の部分６ｂの両方に突部１８を設けることで、絶縁破壊が生じる経路が筒状部７の内周面に沿う場合と固体絶縁物被覆６の外周面に沿う場合のいずれであっても絶縁破壊をより一層生じ難くすることができるが、絶縁破壊が生じる経路が上記２つの経路のうちいずれか一方であることが予測できる場合等には予測できる経路にのみ突部１８を設けるようにしても良い。例えば、ＧＩＳやＧＩＬ等のガス絶縁電力機器では導体３から接地容器２に向けて絶縁破壊が生じると予測できるので、ギャップ８が大きく、導体３から生じた絶縁破壊が接続界面６ａから固体絶縁物本体５の側面に沿って筒状部７の内周面に伝わり、筒状部７の先端から接地容器２へと伝わることが予測できる場合等には筒状部７側の突部１８Ａのみを設けても良い。 Further, in the above description, the protrusions 18 are provided on both the inner peripheral surface 7a of the cylindrical portion 7 and the portion 6b of the solid insulator coating 6, but it is not always necessary to provide both, and only one of them is provided. The protrusion 18 may be provided. That is, by providing the protrusions 18 on both the inner peripheral surface 7a of the cylindrical portion 7 and the portion 6b of the solid insulator coating 6, the path where dielectric breakdown occurs is along the inner peripheral surface of the cylindrical portion 7 and solid. In any case along the outer peripheral surface of the insulator coating 6, it is possible to make the dielectric breakdown more difficult to occur, but it can be predicted that the path where the dielectric breakdown occurs is one of the above two paths. In some cases, the protrusion 18 may be provided only on a predictable route. For example, in a gas insulated power device such as GIS or GIL, it can be predicted that dielectric breakdown will occur from the conductor 3 toward the ground container 2, so that the gap 8 is large and the dielectric breakdown generated from the conductor 3 is solid insulation from the connection interface 6a. When it can be predicted that it is transmitted along the side surface of the main body 5 to the inner peripheral surface of the cylindrical portion 7 and from the tip of the cylindrical portion 7 to the grounding container 2, only the protruding portion 18A on the cylindrical portion 7 side is used. It may be provided.
本発明の導体接続装置の使用によって絶縁耐圧即ち耐電圧を増加させることができることを確認するための実験を行った。 An experiment was conducted to confirm that the withstand voltage, that is, the withstand voltage can be increased by using the conductor connecting device of the present invention.
導体接続装置の検討を行うにあたって、以下の２つのコンセプトを考えた。
（i）接続部の沿面長の増加
（ii）接触界面６ａの電界集中の緩和
沿面放電を考えるとき、沿面長の増加に比例するほどには耐電圧は増加しないが、沿面長の増加は確実に耐電圧の増加につながる。したがって、ＧＩＳまたはＧＩＬの接続箇所において、できる限り（または合理的に）沿面放電に対する沿面長を増加できるようにした（沿面長を適用箇所に応じて任意に設定できる）。
In examining the conductor connection device, the following two concepts were considered.
(I) Increase in creepage length of connection
(Ii) Relaxation of electric field concentration at contact interface 6a When considering creeping discharge, the withstand voltage does not increase as much as the increase in creepage length, but the increase in creeping length surely leads to an increase in withstand voltage. Therefore, the creepage length against creeping discharge can be increased as much as possible (or reasonably) at the connection location of GIS or GIL (the creepage length can be arbitrarily set according to the application location).
電界の集中する場所は放電の起点となる。したがって、耐電圧の上昇のためには、極力電界集中を避ける必要がある。導体３の接続部分で固体絶縁物被覆６同士が接続される場合、固体絶縁物被覆６の端面の接触界面６ａには微小ギャップ（ボイド）の存在が避けられず、この微小ギャップは電界の集中を引き起こす。また、左右から接続する場合、接続部の表面を完全に平坦とすることは困難である。たとえ微小であっても段差があれば、電界の集中を引き起こすことになり、電気的な弱点となる。 The place where the electric field concentrates becomes the starting point of discharge. Therefore, it is necessary to avoid electric field concentration as much as possible in order to increase the withstand voltage. When the solid insulator coatings 6 are connected to each other at the connection portion of the conductor 3, a minute gap (void) cannot be avoided at the contact interface 6a on the end face of the solid insulator coating 6, and this minute gap is a concentration of electric field. cause. Moreover, when connecting from right and left, it is difficult to make the surface of a connection part completely flat. Even if it is minute, if there is a step, it will cause concentration of the electric field, which will be an electrical weak point.
以上の点を考慮し、実験では以下の５つのパターンを検討した。実際の実験配置は後述するように、簡単のために平行平板電極系で行ったが、ここでは実機におけるハイブリッド絶縁方式（導体３を絶縁ガス１と固体絶縁物被覆６とで絶縁する方式）の接続について理解を容易にするために、各コンセプトを同軸円筒モデルで示す。 Considering the above points, the following five patterns were examined in the experiment. As will be described later, the actual experimental arrangement was performed using a parallel plate electrode system for the sake of simplicity. Here, a hybrid insulation method (method in which the conductor 3 is insulated by the insulating gas 1 and the solid insulator coating 6) in an actual machine is used. To facilitate understanding of the connection, each concept is shown as a coaxial cylinder model.
（１）固体絶縁物被覆６なし（構造Ａ）
コネクタ導体４について固体絶縁物被覆６なしの場合を図７に示す。本方式はハイブリッド絶縁方式ではなく、単純な気中絶縁方式である。今回の実験の中で、ハイブリッド絶縁方式による絶縁耐力の向上率を比較するための基準として設定した。
(1) Without solid insulator coating 6 (Structure A)
FIG. 7 shows a case where the connector conductor 4 has no solid insulator coating 6. This method is not a hybrid insulation method but a simple air insulation method. In this experiment, it was set as a standard for comparing the improvement rate of dielectric strength by the hybrid insulation method.
（２）シールド電極方式（構造Ｂ，Ｃ）
シールド電極方式を用いた接続装置を図８および図２に示す。本方式は導体接続装置内部にシールド電極１１を埋め込むことで、固体絶縁物被覆６の接続部側の電界を緩和する方式である。本方式では、導体３（中心導体）の固体絶縁物被覆６と筒状部７との間に接触界面１３がある場合（構造Ｂ：図８）、および両者の間にギャップ８を設けることで接触界面１３を除した場合（構造Ｃ：図２）を検討した。
(2) Shield electrode method (Structures B and C)
A connection device using the shield electrode system is shown in FIGS. In this method, the shield electrode 11 is embedded in the conductor connection device, thereby relaxing the electric field on the connection portion side of the solid insulator coating 6. In this system, when there is a contact interface 13 between the solid insulator coating 6 of the conductor 3 (center conductor) and the cylindrical portion 7 (structure B: FIG. 8), and by providing a gap 8 between them The case where the contact interface 13 was removed (structure C: FIG. 2) was examined.
（３）絶縁物シース方式（構造Ｄ，Ｅ）
絶縁物シース方式を用いた接続装置を図９および図１に示す。本方式は導体接続装置のうち、中心導体３を電気的に接続する部分以外はすべて樹脂である。すなわち、固体の接触界面１３の電界緩和をシールド電極１１等で積極的には行わない。この場合もシールド電極方式と同様に、中心導体３の固体絶縁物被覆６と筒状部７との間に接触界面１３がある場合（構造Ｄ：図９）、および両者の間にギャップ８を設けることで接触界面１３を除した場合（構造Ｅ：図１）を検討した。
(3) Insulator sheath method (Structures D and E)
A connecting device using an insulator sheath method is shown in FIGS. This system is all resin except the part which electrically connects the center conductor 3 among conductor connection apparatuses. That is, the electric field relaxation of the solid contact interface 13 is not actively performed by the shield electrode 11 or the like. Also in this case, as in the shield electrode system, when the contact interface 13 is present between the solid insulator coating 6 of the center conductor 3 and the cylindrical portion 7 (structure D: FIG. 9), a gap 8 is provided between them. The case where the contact interface 13 was removed by the provision (structure E: FIG. 1) was examined.
構造Ａを除くすべてのハイブリッド絶縁方式においては、いずれの場合も導体接続装置のアーム（筒状部７）を軸方向に延長することで、沿面長を任意に設定できる。 In all the hybrid insulation systems except the structure A, the creepage length can be arbitrarily set by extending the arm (tubular portion 7) of the conductor connection device in the axial direction in any case.
次に、実験配置および電圧印加方法について説明する。 Next, an experimental arrangement and a voltage application method will be described.
図１０に実験配置を示す。なお、図１０（ａ）中のＣ−Ｃ線は、このＣ−Ｃ線を軸として回転対称にすると同軸円筒モデルと等しくなることを意味する。また、図１０（ｂ）は（ａ）において模擬接続装置１４の付近のみを図示している。 FIG. 10 shows the experimental arrangement. Note that the CC line in FIG. 10A is equivalent to the coaxial cylindrical model when rotationally symmetric about the CC line. FIG. 10B shows only the vicinity of the simulated connection device 14 in FIG.
実際のＧＩＳ、ＧＩＬは同軸円筒構造であるが、実験では平坦部直径２９０ｍｍの平板電極系で実験を行い、雰囲気ガスは０．１ＭＰａ（ａｂｓ．）のＳＦ６とした。同図において、上部電極１５（平坦部直径２９０ｍｍ）が実際のＧＩＳの接地タンク（接地容器２）、下部電極１６（平坦部直径２９０ｍｍ）が中心導体３に相当する。下部電極１６上に中心導体３の固体絶縁物被覆６を模擬したシリコンゴム１７（直径３００ｍｍ、厚さ５ｍｍ）を設置し、その上に直径１２０ｍｍ、厚さ２０ｍｍの模擬接続装置１４を設置することでハイブリッド絶縁（絶縁ガスと固体絶縁物被覆とによる絶縁）を構成した。模擬接続装置１４下面の中央にはロッド１４ａ（模擬接続装置１４と同一材料。後述するシールド電極１１方式の場合は、ＳＵＳ）がついており、これがシリコンゴム１７を貫通している。したがって、この場合の全路破壊は、上部電極１５と模擬接続装置１４間の気中絶縁破壊、および模擬接続装置１４上の沿面放電、もしくは模擬接続装置１４とシリコンゴム１７との接触界面における界面放電を経て、模擬接続装置１４下面中央のシリコンゴム１７貫通部を放電進展し、下部電極１６に達することで完了する。すなわち、同軸円筒構成（図１，図２，図７，図８，図９）の場合と同じである。シリコンゴム１７のうち、下部電極１６との接触面には導電性塗料を塗布しており、電極とシリコンゴム１７の間にボイドが生じても電界集中が生じないようにしている。また、配置の都合上、上部電極１５に電圧を印加している。 The actual GIS and GIL have a coaxial cylindrical structure. In the experiment, the experiment was performed using a flat plate electrode system having a flat portion diameter of 290 mm, and the atmospheric gas was SF 6 of 0.1 MPa (abs.). In the drawing, the upper electrode 15 (flat portion diameter 290 mm) corresponds to an actual GIS ground tank (ground container 2), and the lower electrode 16 (flat portion diameter 290 mm) corresponds to the center conductor 3. A silicon rubber 17 (diameter 300 mm, thickness 5 mm) simulating the solid insulator coating 6 of the central conductor 3 is installed on the lower electrode 16, and a simulated connection device 14 having a diameter of 120 mm and a thickness of 20 mm is installed thereon. The hybrid insulation (insulation by insulating gas and solid insulator coating) was constructed. At the center of the lower surface of the simulated connection device 14 is a rod 14a (same material as the simulated connection device 14; SUS in the case of the shield electrode 11 method described later), which penetrates the silicon rubber 17. Therefore, the all-path breakdown in this case is the air breakdown between the upper electrode 15 and the simulated connection device 14 and the creeping discharge on the simulated connection device 14 or the interface at the contact interface between the simulated connection device 14 and the silicon rubber 17. The discharge progresses through the silicon rubber 17 penetrating portion at the center of the lower surface of the simulated connection device 14 through the discharge, and is completed by reaching the lower electrode 16. That is, it is the same as the case of the coaxial cylindrical configuration (FIG. 1, FIG. 2, FIG. 7, FIG. 8, FIG. 9). A conductive paint is applied to the contact surface of the silicon rubber 17 with the lower electrode 16 so that electric field concentration does not occur even if a void occurs between the electrode and the silicon rubber 17. In addition, a voltage is applied to the upper electrode 15 for convenience of arrangement.
模擬接続装置１４は、前述したように、固体絶縁物被覆６なし、シールド電極方式、および絶縁物シース方式の３種類を用いた。シールド電極方式および絶縁物シース方式については、図１０（ａ）に示す模擬接続装置１４と固体絶縁物被覆６（シリコンゴム１７）との間に接触界面１３のある場合、および同図（ｂ）に示すように模擬接続装置１４とシリコンゴム１７の間にギャップ（ｇ３＝５ｍｍ）を設けることで接触界面を除した場合で実験を行った。ギャップが狭い場合はかえって電界の集中を招くことになるが、実験では模擬接続装置１４の上部高電圧側電極側が気中の最大電界となるよう設定した（各配置における電界計算結果は後述する）。 As described above, three types of the simulated connection device 14 were used: the solid insulator coating 6 not provided, the shield electrode method, and the insulator sheath method. As for the shield electrode method and the insulator sheath method, the case where the contact interface 13 exists between the simulated connection device 14 shown in FIG. 10A and the solid insulator coating 6 (silicon rubber 17), and FIG. As shown in FIG. 4, the experiment was performed in the case where the contact interface was removed by providing a gap (g3 = 5 mm) between the simulated connection device 14 and the silicon rubber 17. If the gap is narrow, the concentration of the electric field will be caused, but in the experiment, the upper high voltage side electrode side of the simulated connection device 14 is set to be the maximum electric field in the air (the electric field calculation results in each arrangement will be described later). .
各模擬接続装置１４の詳細を図１１に示す。固体絶縁物被覆なし（同図（ａ））は、ステンレス製で鏡面仕上げを施してある。この条件は、上述の構造Ａに相当する。全路破壊は上部電極１５とステンレス製の模擬接続装置１４間の気中破壊で完了する。シールド電極方式（同図（ｂ））は、鏡面仕上げを施したステンレス製電極をエポキシ（固体絶縁物被覆６）でモールドしたものであり、絶縁物シース方式（同図（ａ））は、すべてアクリル（ＰＭＭＡ）である。このシールド電極方式、絶縁物シース方式は、上述のとおり、接触界面１３のある場合（図１０（ａ））、および接触界面１３のない場合（図４（ｂ））について実験を行った。これは、構造Ｂ、Ｃ（シールド方式）、および構造Ｄ、Ｅ（絶縁物シース方式）に相当する。 Details of each simulated connection device 14 are shown in FIG. Without a solid insulator coating ((a) in the figure), it is made of stainless steel and has a mirror finish. This condition corresponds to the structure A described above. All-path destruction is completed by air destruction between the upper electrode 15 and the stainless steel simulated connection device 14. The shield electrode method (Fig. (B)) is a mirror-finished stainless steel electrode molded with epoxy (solid insulator coating 6), and the insulator sheath method (Fig. (A)) is all Acrylic (PMMA). As described above, the shield electrode method and the insulator sheath method were tested for the case where the contact interface 13 was present (FIG. 10A) and the case where the contact interface 13 was not present (FIG. 4B). This corresponds to the structures B and C (shield method) and the structures D and E (insulator sheath method).
上下電極間のギャップ長、各模擬接続装置１４の配置は、事前に電界計算を実施し、気中の最大電界（模擬接続装置１４の上面端部付近）がほぼ一致するように設定した。模擬接続装置１４が絶縁物シース方式もしくはシールド電極方式で、シリコンゴム１７との接触界面１３が存在する場合（構造Ｂ、Ｄ）、最大電界点は模擬接続装置１４、シリコンゴム１７、 ＳＦ６ガスによる三重点付近となるが、実験では模擬接続装置１４の上面における最大電界で整理することとした。 The gap length between the upper and lower electrodes and the arrangement of each simulated connection device 14 were set in advance so that the maximum electric field in the air (near the upper end portion of the simulated connection device 14) was substantially matched by performing electric field calculation in advance. When the simulated connection device 14 is an insulator sheath method or a shield electrode method and the contact interface 13 with the silicon rubber 17 exists (structures B and D), the maximum electric field point is the simulated connection device 14, the silicon rubber 17, SF 6 gas. In the experiment, the maximum electric field on the upper surface of the simulated connection device 14 was arranged.
実験条件を表１にまとめ、電界計算結果を図１２に示す。電界計算は、電荷重畳法を用い、簡単のため接地側電極の固体絶縁物（シリコンゴム１７：厚さ５ｍｍ）は考慮しないこととした。シリコンゴム１７が単純な平板で厚さが薄いため電界を乱すことが無く、シリコンゴム１７を考慮しない場合でも、前述の気中最大電界はほとんど変化しない（例えば、図１２（ａ）の場合、高電圧側電極に１ｋＶ印加した時の最大電界値は、シリコンゴム１７を考慮する場合０．７１７ｋＶ／ｃｍ、考慮しない場合で０．７１６ｋＶ／ｃｍ）。 The experimental conditions are summarized in Table 1, and the electric field calculation results are shown in FIG. The electric field calculation uses a charge superposition method, and for simplicity, the solid insulator (silicon rubber 17: thickness 5 mm) of the ground side electrode is not considered. Since the silicon rubber 17 is a simple flat plate and has a small thickness, the electric field is not disturbed, and even when the silicon rubber 17 is not taken into consideration, the above-described maximum electric field in the air hardly changes (for example, in the case of FIG. 12A, The maximum electric field value when 1 kV is applied to the high voltage side electrode is 0.717 kV / cm when the silicon rubber 17 is considered, and 0.716 kV / cm when the silicon rubber 17 is not considered.
印加電圧は図１３に示す正・負の標準雷インパルス（１．２／４８μｓ）とし、５０％スパークオーバ電圧（Ｖ５０）および最低破壊電圧（Ｖ５０−３σ）を推定するための電圧印加法はステップ上昇法を用いた。ステップ上昇法は、昇降法などと同様に絶縁破壊の５０％電圧や最低スパークオーバ電圧の推定に用いられる電圧印加法である。本実験で使用したステップ上昇法による試験の手順は以下の通りである（図１４）。
（１）予想される全路破壊電圧値の５０％〜８０％の電圧を印加する。
（２）全路破壊が生じない場合、一定の電圧幅ΔＶ（今回は平均４ｋＶ）だけ電圧を上昇させて再び電圧を印加する。
（３）（２）の操作を全路破壊が生じるまで行う。
（４）（１）〜（３）を２０回繰り返す（絶縁破壊電圧の取得回数ｎを２０とする）。
The applied voltage is a positive / negative standard lightning impulse (1.2 / 48 μs) shown in FIG. 13, and the voltage application method for estimating the 50% sparkover voltage (V50) and the minimum breakdown voltage (V50-3σ) is a step. The ascent method was used. The step-up method is a voltage application method used for estimating the 50% breakdown voltage and the minimum sparkover voltage as in the case of the elevation method. The test procedure using the step-up method used in this experiment is as follows (FIG. 14).
(1) A voltage of 50% to 80% of an expected all-path breakdown voltage value is applied.
(2) When all the roads do not break, the voltage is increased by a certain voltage width ΔV (average 4 kV this time), and the voltage is applied again.
(3) The operation of (2) is performed until the whole road is destroyed.
(4) Repeat (1) to (3) 20 times (the number of acquisitions n of the dielectric breakdown voltage is 20).
ステップ上昇法では、絶縁破壊が生じるごとに印加電圧を開始レベルまで戻すために破壊確率の小さい低電圧における絶縁破壊を捕らえることができる。また、絶縁破壊と次の絶縁破壊までの間隔が必然的に長くなるため、前回の絶縁破壊の影響（例えば、空間の残留電荷の影響など）を避けることができるなどのメリットがある。また、今回の実験では２台のスチルカメラを用いて放電様相を観察した。 In the step-up method, dielectric breakdown at a low voltage with a low breakdown probability can be captured in order to return the applied voltage to the start level every time dielectric breakdown occurs. In addition, since the interval between the dielectric breakdown and the next dielectric breakdown is inevitably long, there is an advantage that the influence of the previous dielectric breakdown (for example, the influence of the residual charge in the space) can be avoided. In this experiment, the discharge mode was observed using two still cameras.
（模擬接続装置１４と放電進展様相）
観察の結果、いずれの場合も、気中ギャップ（図１０（ａ）のｇ１）の絶縁破壊部分は模擬接続装置１４の上面端部であった。この部分は、前述したとおり気中の最大電界部分である（接触界面１３が存在する場合の三重点付近を除く）。
(Simulated connection device 14 and discharge progress)
As a result of the observation, the dielectric breakdown part of the air gap (g1 in FIG. 10A) was the upper end part of the simulated connection device 14 in any case. This part is the maximum electric field part in the air as described above (except for the vicinity of the triple point when the contact interface 13 exists).
接触界面１３がある場合、印加電圧の極性および模擬接続装置１４の材質によらず、模擬接続装置１４とシリコンゴム１７の接触界面１３を放電が進展して全路破壊に至る場合と、三重点付近のシリコンゴム１７を貫通破壊して全路破壊に至る場合があった。いずれの場合も絶縁破壊電圧に有意な差は無かった。また、一度貫通破壊を生じた供試体であっても貫通破壊した場所が選択的に破壊することは無く、その後界面放電による全路破壊を生じたり、異なる場所で貫通破壊を生じたりしたため、２０回の破壊においてシリコンゴム１７は交換しなかった。構造Ｂ，Ｄについては、接続模擬部下のシリコンゴム１７に貫通破壊痕があった。後述するが、接触界面１３が無い場合（構造ＣおよびＥ）は貫通破壊を生じることはなく、接触界面１３がある場合の特有の現象であった。これは、三重点付近が電界の特異点となることから、気中（図１０のギャップｇ１）の絶縁破壊によらず、この付近では界面放電もしくは貫通破壊が発生しているものと考えられる。今回の実験では、貫通破壊の場合と界面放電の場合で絶縁破壊電圧に有意な差が無かったことから、仮にシリコンゴム１７よりも貫通破壊に対する絶縁耐力が高い固体絶縁物を使用しても、絶縁破壊電圧の向上は難しいと考えられる。 When there is the contact interface 13, regardless of the polarity of the applied voltage and the material of the simulated connection device 14, the discharge progresses on the contact interface 13 between the simulated connection device 14 and the silicon rubber 17, resulting in all-path destruction, and the triple point. In some cases, the silicon rubber 17 in the vicinity was penetrated and destroyed, leading to destruction of the entire road. In all cases, there was no significant difference in breakdown voltage. In addition, even in the specimen that once caused the penetration failure, the place where the penetration failure did not occur selectively, and then the entire path was destroyed due to the interface discharge, or the penetration failure occurred at a different location. The silicon rubber 17 was not exchanged during each break. Regarding the structures B and D, there was a penetration fracture mark in the silicon rubber 17 under the connection simulation portion. As will be described later, when there is no contact interface 13 (structures C and E), penetration failure does not occur, which is a characteristic phenomenon when the contact interface 13 is present. This is presumably because interfacial discharge or penetration breakdown occurs in the vicinity of the triple point near the triple point, regardless of the dielectric breakdown in the air (gap g1 in FIG. 10). In this experiment, since there was no significant difference in the breakdown voltage between the case of the through breakdown and the case of the interface discharge, even if a solid insulator having a higher dielectric strength against the through breakdown than the silicon rubber 17 is used, It is considered difficult to improve the breakdown voltage.
模擬接続装置１４がシールド電極方式で、接触界面１３がない場合（構造Ｃ）、印加電圧の極性によらず、全ての場合で模擬接続装置１４表面の沿面放電により全路破壊を生じていた。すなわち、模擬接続装置１４とシリコンゴム１７が向かい合っている部分（模擬接続装置１４の下面側）においても、沿面放電はシリコンゴム１７表面ではなく模擬接続装置１４の表面を進展していた。これはシールド電極方式の沿面放電がいわゆる背後電極ありの沿面放電であり、放電が進展しやすいためであると考えられる。シリコンゴム１７側も背後電極が存在するが、シリコンゴム１７の沿面放電のためには、模擬接続装置１４とシリコンゴム１７間の気中ギャップ（ｇ３）を絶縁破壊する必要があり、結果的にシールド電極方式模擬接続装置１４沿面の方が進展しやすかったものと考えられる。 When the simulated connection device 14 is a shield electrode type and there is no contact interface 13 (Structure C), all-path destruction occurred due to creeping discharge on the surface of the simulated connection device 14 regardless of the polarity of the applied voltage. That is, even in the portion where the simulated connection device 14 and the silicon rubber 17 face each other (the lower surface side of the simulated connection device 14), the creeping discharge propagates on the surface of the simulated connection device 14 instead of the surface of the silicon rubber 17. This is considered to be because the creeping discharge of the shield electrode type is a so-called creeping discharge with a back electrode, and the discharge is likely to progress. Although a back electrode exists on the silicon rubber 17 side, in order for creeping discharge of the silicon rubber 17, it is necessary to break down the air gap (g 3) between the simulated connection device 14 and the silicon rubber 17. It is considered that the creeping of the shield electrode type simulated connection device 14 was easier to progress.
模擬接続装置１４が絶縁物シース方式の場合（構造Ｅ）、印加電圧の極性によらず、ほとんどの場合でシリコンゴム１７表面の沿面放電により全路破壊を生じていた。模擬接続装置１４の下面において、途中までは模擬接続装置１４に沿って進展しても、最終的には気中ギャップ（ｇ３）を絶縁破壊し、シリコンゴム１７表面に放電が移行し沿面放電を形成していた。これはシールド電極方式の場合と異なり、模擬接続装置１４中には電極が存在しないために模擬接続装置１４側に放電を保持する吸引効果がなく、気中ギャップ（ｇ３）を絶縁破壊して背後電極のあるシリコンゴム１７側に放電が移行したものと考えられる。 When the simulated connection device 14 is of the insulator sheath type (Structure E), all-path destruction was caused by creeping discharge on the surface of the silicon rubber 17 in most cases regardless of the polarity of the applied voltage. Even if it progresses along the simulated connection device 14 up to the middle on the lower surface of the simulated connection device 14, the air gap (g3) is eventually broken down, and the discharge is transferred to the surface of the silicon rubber 17 to cause creeping discharge. Was forming. This is different from the shield electrode type in that there is no electrode in the simulated connection device 14, so there is no suction effect for holding the discharge on the simulated connection device 14 side, and the air gap (g 3) is dielectrically broken to the rear. It is considered that the discharge has shifted to the silicon rubber 17 side where the electrodes are provided.
（５０％破壊電圧および最低破壊電圧の推定）
ステップ上昇法により推定された５０％スパークオーバ電圧（Ｖ５０）および最低破壊電圧（Ｖ５０−３σ）を表２および図１５に示す。表２より、いずれの模擬接続装置１４の場合でも、５０％破壊電圧は正極性の方が低いことがわかる。正極性の場合、沿面放電が進展しやすいことが知られており、絶縁破壊電圧が低下しているものと考えられる。同表にはＶ５０およびＶ５０−３σについて、それぞれ模擬接続装置１４が絶縁被覆なしの場合（構造Ａ）の値を基準（１００％）とした場合の向上率も示している。
(Estimation of 50% breakdown voltage and minimum breakdown voltage)
The 50% sparkover voltage (V50) and the minimum breakdown voltage (V50-3σ) estimated by the step-up method are shown in Table 2 and FIG. From Table 2, it can be seen that in any of the simulated connection devices 14, the 50% breakdown voltage is lower in the positive polarity. In the case of positive polarity, it is known that creeping discharge is likely to progress, and it is considered that the dielectric breakdown voltage is lowered. The table also shows the improvement rates when V50 and V50-3σ are based on the value (100%) when the simulated connection device 14 has no insulation coating (structure A).
接触界面１３が存在する場合（構造Ｂ，Ｄ）は、模擬接続装置１４がシールド電極方式の方が絶縁物シース方式の場合よりも若干高いが、いずれも絶縁破壊電圧の向上率は小さい（絶縁物シース方式の場合、負極性のＶ５０−３σは逆に９７．１％と減少している）。シールド電極方式の方が若干高いのは、ボイドの存在が避けられない接触界面１３の電界が緩和されるためと考えられるが、上述したとおり接触界面１３の三重点付近に電界の特異点が存在するため、絶縁破壊電圧が向上し難いものと考えられる（今回の実験における向上率は、Ｖ５０の正極性で８％、負極性で１０％、Ｖ５０−３σの正極性で１４％、負極性で１７％程度）。 In the case where the contact interface 13 exists (structures B and D), the simulated connection device 14 is slightly higher in the shield electrode method than in the insulator sheath method, but the improvement rate of the breakdown voltage is small (insulation) In the case of the physical sheath method, the negative polarity V50-3σ is conversely reduced to 97.1%). The reason why the shield electrode method is slightly higher is thought to be because the electric field of the contact interface 13 where the presence of voids cannot be avoided is relaxed, but as described above, there exists an electric field singularity near the triple point of the contact interface 13. Therefore, it is considered that the breakdown voltage is difficult to improve (the improvement rate in this experiment is 8% for the positive polarity of V50, 10% for the negative polarity, 14% for the positive polarity of V50-3σ, and negative polarity) About 17%).
接触界面１３が存在しない場合（構造Ｃ，Ｅ）には、絶縁物シース方式の方がシールド電極方式の場合よりも高い。前述の通り、シールド電極方式の場合の放電は、いわゆる背後電極ありの沿面放電であるため、放電が進展しやすく絶縁破壊電圧が向上しにくいものと考えられる（シールド電極方式の場合、今回の実験における向上率はＶ５０の正極性で１２％、負極性で１５％、Ｖ５０−３σの正極性で１５％、負極性で２５％程度）。結果的にもっとも耐電圧が向上したのは、電界の特異点となる三重点が無く、模擬接続装置１４に背後電極の無い「絶縁物シース方式・接触界面１３なし（構造Ｅ）」の場合であり、Ｖ５０およびＶ５０−３σともに正極性で約５０％、負極性で約４０％向上している。前述したとおり、この場合の放電進展は模擬接続装置１４背面で気中ギャップ（ｇ３）を絶縁破壊し、背後電極のあるシリコンゴム１７の沿面放電へと移行する。この耐電圧の上昇分は背後電極の無い模擬接続装置１４の沿面放電電圧と模擬接続装置１４背面の気中ギャップ（ｇ３）の絶縁破壊電圧の向上によるものと推定される。したがって、模擬接続装置１４の沿面長を長くするとともに、模擬接続装置１４背面のギャップ（ｇ３）を最適化することで更なる絶縁性能の向上が期待できる（ｇ３の拡大により、ｇ３部分の気中破壊を抑制できれば更なる耐電圧の向上が期待できる。ｇ３が狭すぎると電界集中を起こし、かえって絶縁性能の低下を招く可能性がある）。この接続部沿面長と接続部背面ギャップ（ｇ３）は、ガス種・ガス圧力（気中の絶縁破壊性能）とともに相関関係があると考えられ、沿面の形状も含め、今後最適条件の検討を行う予定である。さらにこの形状の場合、シールド電極１１がある場合に比べて、同じ形状における気中（接続部の表面）の最大電界を低減できるメリットがある。すなわち今回の実験の場合、表１に示すとおり模擬接続装置１４の表面電界が一定になるような配置とするとき、シールド電極１１がある場合（構造Ｃ）の実ギャップ長（図１０のｇ２：高電圧側電極と接地側電極の距離）が４６ｍｍであるのに対し、シールド電極１１が無い場合（構造Ｅ）は３２．５ｍｍと３割程度コンパクトである。 When the contact interface 13 does not exist (structures C and E), the insulator sheath method is higher than the shield electrode method. As described above, the discharge in the shield electrode method is a so-called creeping discharge with a back electrode, so it is considered that the discharge is likely to progress and the breakdown voltage is difficult to improve (in the case of the shield electrode method, this experiment). (The improvement rate is about 12% for the positive polarity of V50, 15% for the negative polarity, 15% for the positive polarity of V50-3σ, and about 25% for the negative polarity). As a result, the withstand voltage was most improved in the case of “insulator sheath method / no contact interface 13 (structure E)” in which there is no triple point as a singular point of the electric field and the back electrode is not provided in the simulated connection device 14. Yes, both V50 and V50-3σ are improved by about 50% in the positive polarity and about 40% in the negative polarity. As described above, the progress of the discharge in this case breaks down the air gap (g3) on the back of the simulated connection device 14 and shifts to the creeping discharge of the silicon rubber 17 having the back electrode. The increase in the withstand voltage is estimated to be due to the improvement of the dielectric breakdown voltage of the creeping discharge voltage of the simulated connection device 14 without the back electrode and the air gap (g3) on the back of the simulated connection device 14. Therefore, further improvement of the insulation performance can be expected by increasing the creeping length of the simulated connection device 14 and optimizing the gap (g3) on the back surface of the simulated connection device 14 (by increasing g3, If breakdown can be suppressed, further improvement in withstand voltage can be expected.If g3 is too narrow, electric field concentration may occur, which may lead to deterioration of insulation performance). It is considered that the creepage length of the connecting part and the gap at the back of the connecting part (g3) are correlated with the gas type and gas pressure (dielectric breakdown performance in the air), and the optimum conditions including the shape of the creepage will be studied in the future. Is scheduled. Furthermore, in the case of this shape, there is an advantage that the maximum electric field in the air (surface of the connection portion) in the same shape can be reduced as compared with the case where the shield electrode 11 is provided. That is, in the case of this experiment, when the surface electric field of the simulated connection device 14 is set to be constant as shown in Table 1, the actual gap length when the shield electrode 11 is present (structure C) (g2 in FIG. 10: Whereas the distance between the high voltage side electrode and the ground side electrode is 46 mm, the case without the shield electrode 11 (structure E) is 32.5 mm, which is about 30% compact.
以上の結果を踏まえ、実際のＧＩＳ，ＧＩＬ等の同軸円筒構造に適用した場合の概念を図１，図５に示す。図１は中心導体３の接続のみの場合、図５はスペーサ部で中心導体３の接続を行う場合である。固体絶縁物被覆６−筒状部７の接触界面１３がほとんど無く、現行機器と同じ差込み方式で導体３を連結できるため施工も容易である。 Based on the above results, the concept when applied to an actual coaxial cylindrical structure such as GIS or GIL is shown in FIGS. FIG. 1 shows the case where only the central conductor 3 is connected, and FIG. 5 shows the case where the central conductor 3 is connected at the spacer portion. Since there is almost no contact interface 13 of the solid insulator coating 6-cylindrical part 7 and the conductor 3 can be connected by the same insertion method as the current equipment, the construction is also easy.
以上をまとめると、次の通りである。
（１）シールド電極方式（構造Ｂ、Ｃ）は、接続部の電界を緩和できるが、模擬接続装置１４が背後電極つきの固体絶縁物となるため沿面放電が進展しやすく、比較的向上率の良かった構造Ｃの場合でも、向上率は正極性で１５％、負極性で２５％程度であった。
（２）絶縁物シース方式においては、接触界面１３がある場合（構造Ｄ）はほとんど耐電圧が向上しない。これは接触界面１３のボイドおよび三重点の影響によるものと考えられる。接触界面１３が無い場合（構造Ｅ）は、接触界面１３のボイド、三重点、および背後電極の効果がないことから、実験の条件の中で最も耐電圧が向上し、正極性で５０％、負極性で４０％程度向上した。
The above is summarized as follows.
(1) The shield electrode method (Structures B and C) can alleviate the electric field at the connection part, but the simulated connection device 14 becomes a solid insulator with a back electrode, so that creeping discharge tends to progress and the improvement rate is relatively good. Even in the case of Structure C, the improvement rate was about 15% for the positive polarity and about 25% for the negative polarity.
(2) In the insulator sheath method, when the contact interface 13 is present (structure D), the withstand voltage is hardly improved. This is thought to be due to the influence of voids and triple points on the contact interface 13. When there is no contact interface 13 (structure E), since there is no effect of the void, triple point, and back electrode of the contact interface 13, the withstand voltage is most improved among the experimental conditions, and the positive polarity is 50%. The negative polarity improved by about 40%.
以上より、「シールド電極方式、固体絶縁物接触界面１３なし（構造Ｃ）」と「絶縁物シース方式、固体絶縁物接触界面１３なし（構造Ｅ）」の場合、耐電圧が向上することが確認できた。特に構造Ｅの場合、耐電圧が顕著に向上することが確認できた。 From the above, it is confirmed that the withstand voltage is improved in the case of “shielded electrode method, no solid insulator contact interface 13 (structure C)” and “insulator sheath method, no solid insulator contact interface 13 (structure E)”. did it. In particular, in the case of the structure E, it was confirmed that the withstand voltage was remarkably improved.
突部１８を設けることで絶縁破壊がより一層生じ難くなることを確認するための実験を行った。実験には、図１０に示す実施例１の実験と同じ装置を使用した。ただし、シリコンゴム１７に代えて、厚さ５ｍｍのアクリル板１９（図１９（ｂ）参照）で固体絶縁物被覆６を模擬した。模擬接続装置１４としては、絶縁物シース方式（図１１（ａ））のものを２グループ準備し、そのうち１グループには、図１９に示すように固体絶縁物被覆６を模擬したアクリル板１９に臨む部分に突起１８Ａを模擬した突起２０Ａを設けた。また、固体絶縁物被覆６を模擬したアクリル板１９も２グループ準備し、そのうち１グループには模擬接続装置１４に臨む部分に突起１８Ｂを模擬した突起２０Ｂを設けた。各突起２０Ａ，２０Ｂは２つずつ設けられており、互い違いになるように同心円状に配置した。各突起２０Ａ，２０Ｂの高さを５ｍｍ、模擬接続装置１４とアクリル板との間隔（ｇ３）を１０ｍｍ、模擬接続装置１４の厚さを２０ｍｍとした。また、模擬接続装置１４の直径（シース長）を１２０ｍｍとした。気中ギャップｇ１を２．５ｍｍ、実ギャップ長ｇ２を３７．５ｍｍとした。 An experiment was conducted to confirm that the provision of the protrusion 18 makes it more difficult for dielectric breakdown to occur. In the experiment, the same apparatus as in the experiment of Example 1 shown in FIG. 10 was used. However, the solid insulator coating 6 was simulated with an acrylic plate 19 (see FIG. 19B) having a thickness of 5 mm instead of the silicon rubber 17. As the simulated connection device 14, two groups of the insulator sheath type (FIG. 11A) are prepared, and one group includes an acrylic plate 19 simulating the solid insulator coating 6 as shown in FIG. Protrusions 20A simulating the protrusions 18A were provided at the facing portions. In addition, two groups of acrylic plates 19 simulating the solid insulator coating 6 were prepared, and one group was provided with a projection 20B simulating the projection 18B at a portion facing the simulated connection device 14. Each of the protrusions 20A and 20B is provided in two, and is arranged concentrically so as to be staggered. The height of each protrusion 20A, 20B was 5 mm, the distance (g3) between the simulated connection device 14 and the acrylic plate was 10 mm, and the thickness of the simulated connection device 14 was 20 mm. The diameter (sheath length) of the simulated connection device 14 was 120 mm. The air gap g1 was 2.5 mm, and the actual gap length g2 was 37.5 mm.
実験は、突起２０Ａの無い模擬接続装置１４と突起２０Ｂの無いアクリル板１９との組み合わせ（バリアなし）と、突起２０Ａを有する模擬接続装置１４と突起２０Ｂを有するアクリル板１９との組み合わせ（Ｗバリア）について行なった。上述の実施例１の実験では印加電圧は図１３に示す正・負の標準雷インパルス（１．２／４８μｓ）としたが、本実験では図１３に示す正の標準雷インパルス（１．２／４８μｓ）とした。また、５０％スパークオーバ電圧（Ｖ５０）および最低破壊電圧（Ｖ５０−３σ）を推定するための電圧印加法は、上述の実施例１の実験と同じステップ上昇法を用いた。 In the experiment, a combination of the simulated connection device 14 without the projection 20A and the acrylic plate 19 without the projection 20B (no barrier), and a combination of the simulated connection device 14 with the projection 20A and the acrylic plate 19 with the projection 20B (W barrier). ). In the experiment of Example 1 described above, the applied voltage was the positive / negative standard lightning impulse (1.2 / 48 μs) shown in FIG. 13, but in this experiment, the positive standard lightning impulse (1.2 / 48 μs) shown in FIG. 48 μs). The voltage application method for estimating the 50% sparkover voltage (V50) and the minimum breakdown voltage (V50-3σ) was the same step-up method as in the experiment of Example 1 described above.
ステップ上昇法により推定された最低破壊電圧（Ｖ５０−３σ）を表３および図２０に示す。Ｗバリアの場合はアクリル板１９が貫通破壊したたため、アクリル板１９の準備枚数との関係で２回しか実験をおこなうことができなかった。しかしながら、いずれの場合も絶縁破壊電圧が２２８．２ｋＶであったため、図２０ではラインで示している。一方、バリアなしの場合は１６７．５ｋＶであった。したがって、バリアなしの場合に対するＷバリアの場合の最低破壊電圧の向上率は３６％であった。この結果、突起１８を設けることで絶縁破壊がより一層生じ難くなることを確認することができた。 Table 3 and FIG. 20 show the minimum breakdown voltage (V50-3σ) estimated by the step-up method. In the case of the W barrier, the acrylic plate 19 was penetrated and destroyed, so that the experiment could be performed only twice in relation to the number of prepared acrylic plates 19. However, in any case, since the dielectric breakdown voltage was 228.2 kV, it is indicated by a line in FIG. On the other hand, it was 167.5 kV when there was no barrier. Therefore, the improvement rate of the minimum breakdown voltage in the case of the W barrier with respect to the case without the barrier was 36%. As a result, it has been confirmed that the provision of the protrusion 18 makes it more difficult for dielectric breakdown to occur.
１ 絶縁ガス
２ 接地容器
３ 導体
４ コネクタ導体
５ 固体絶縁物本体
３ａ 導体の端部
６ 固体絶縁物被覆
６ａ 固体絶縁物被覆の端面の接触界面
６ｂ 固体絶縁物被覆の外周面の筒状部に臨む部分
７ 筒状部
７ａ 筒状部の内周面
８ ギャップ
９ 絶縁コネクタ
１０ 絶縁スペーサ
１１ シールド電極
１８ 突部
DESCRIPTION OF SYMBOLS 1 Insulation gas 2 Grounding container 3 Conductor 4 Connector conductor 5 Solid insulator main body 3a End 6 of a conductor Solid insulation coating 6a Contact interface 6b of the end surface of a solid insulation coating It faces the cylindrical part of the outer peripheral surface of a solid insulation coating Part 7 Tubular part 7a Inner peripheral surface 8 of the tubular part Gap 9 Insulating connector 10 Insulating spacer 11 Shield electrode 18 Projection
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008236038A JP5198989B2 (en) | 2008-03-18 | 2008-09-16 | Conductor connection device for gas insulated power equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2008069066 | 2008-03-18 | ||
| JP2008069066 | 2008-03-18 | ||
| JP2008236038A JP5198989B2 (en) | 2008-03-18 | 2008-09-16 | Conductor connection device for gas insulated power equipment |
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| Publication Number | Publication Date |
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| JP2009261215A JP2009261215A (en) | 2009-11-05 |
| JP5198989B2 true JP5198989B2 (en) | 2013-05-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2008236038A Expired - Fee Related JP5198989B2 (en) | 2008-03-18 | 2008-09-16 | Conductor connection device for gas insulated power equipment |
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| JP (1) | JP5198989B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2568553A1 (en) | 2011-09-12 | 2013-03-13 | Eaton Industries (Netherlands) B.V. | Busbar connection |
| JP6021355B2 (en) * | 2012-02-29 | 2016-11-09 | 株式会社東芝 | Conductor connection structure |
| JP5761108B2 (en) * | 2012-04-06 | 2015-08-12 | 日立金属株式会社 | Solid insulation bus termination connection |
| JP6055269B2 (en) * | 2012-10-24 | 2016-12-27 | 株式会社東芝 | Electrical equipment connection device |
| GB201223009D0 (en) | 2012-12-20 | 2013-01-30 | Eaton Ind Netherlands Bv | Conductor system for use in a dielectric |
| CN107294030B (en) * | 2017-07-25 | 2022-10-14 | 广东吉熙安电缆附件有限公司 | Tubular bus connecting structure |
| WO2019140245A1 (en) | 2018-01-12 | 2019-07-18 | Tyton Biosciences, Llc | Methods for recycling cotton and polyester fibers from waste textiles |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS52129986A (en) * | 1976-04-23 | 1977-10-31 | Toshiba Corp | Piping bus |
| JPS56106015U (en) * | 1980-01-16 | 1981-08-18 | ||
| JP4429205B2 (en) * | 2005-05-16 | 2010-03-10 | 三菱電機株式会社 | Gas insulation equipment |
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| JP2009261215A (en) | 2009-11-05 |
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