JP5198656B2 - 窒化物半導体デバイス - Google Patents
窒化物半導体デバイス Download PDFInfo
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- JP5198656B2 JP5198656B2 JP2011510147A JP2011510147A JP5198656B2 JP 5198656 B2 JP5198656 B2 JP 5198656B2 JP 2011510147 A JP2011510147 A JP 2011510147A JP 2011510147 A JP2011510147 A JP 2011510147A JP 5198656 B2 JP5198656 B2 JP 5198656B2
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- 150000004767 nitrides Chemical class 0.000 title claims description 39
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 239000002096 quantum dot Substances 0.000 claims description 151
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- 230000010287 polarization Effects 0.000 claims description 24
- 230000005693 optoelectronics Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 description 24
- 229910052733 gallium Inorganic materials 0.000 description 22
- 238000000034 method Methods 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 21
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- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
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- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06213—Amplitude modulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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- Optics & Photonics (AREA)
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Description
102 活性領域
102a 量子ドット層(量子ドット)
102b 障壁層
103 上層
104a 背面電極(電界を印加する手段)
104b 上部電極(電界を印加する手段)
105 電圧源(電界を印加する手段)
401 基板
402 n−GaN層
403 活性領域
404 p−GaN層
405a 上部コンタクト(電界を印加する手段)
405b 底部コンタクト(電界を印加する手段)
406 バイアス電位(電界を印加する手段)
407 レーザ光線
408 放射された光
601 基板
602 バッファ層
603 第1のクラッド層
604 第1の導光層
605 活性領域
606 第2の導光層
607 第2のクラッド層
608 キャッピング層
609a 上部電極(電界を印加する手段)
609b 底部電極(電界を印加する手段)
610 バイアス電位(電界を印加する手段)
611 レーザービーム
612 放射されたレーザービーム
Claims (12)
- AlxGayIn1−x−yN量子ドット(0≦x<1および0≦y≦1)を含有する活性領域を含む層構造と、上記量子ドット内の励起子のスピン配向を変更するために上記活性領域を横切って電界を印加する手段とを備え、
上記電界を印加する手段は、使用時に、量子ドットの成長方向に対してほぼ直角に電界を印加するように配置されている、窒化物半導体デバイス。 - 上記電界を印加する手段は、上記活性領域の対向し合う側面上に配置された電極を含む、請求項1に記載の窒化物半導体デバイス。
- 上記電界を印加する手段は、量子細線を含む、請求項1に記載の窒化物半導体デバイス。
- 上記電界を印加する手段は、使用時に、上記量子ドットのビルトイン電界の方向に対して実質的に逆の成分を有する電界を印加するように配置されている、請求項1〜3のいずれか1項に記載の窒化物半導体デバイス。
- 上記活性領域は、2つまたはそれ以上の量子ドット層を含む、請求項1〜4のいずれか1項に記載の窒化物半導体デバイス。
- 上記活性領域の内部の各量子ドットは、50nm未満の寸法を有している、請求項1〜5のいずれか1項に記載の窒化物半導体デバイス。
- 上記量子ドットは、細長い量子ドットである、請求項1〜6のいずれか1項に記載の窒化物半導体デバイス。
- 上記量子ドットは、インターフェース異方性を有している、請求項1〜7のいずれか1項に記載の窒化物半導体デバイス。
- 光電子デバイスを含む、請求項1〜8のいずれか1項に記載の窒化物半導体デバイス。
- 光ポンプされた光電子デバイスを含む、請求項9に記載の窒化物半導体デバイス。
- 上記活性領域を横切る電界を変更することによって、上記デバイスからの光出力の強度が変更される、請求項9または10に記載の窒化物半導体デバイス。
- 上記活性領域を横切る電界を変更することによって、上記窒化物半導体デバイスからの光出力の偏光が変更される、請求項9または10に記載の窒化物半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0810182.6 | 2008-06-04 | ||
GB0810182A GB2460666A (en) | 2008-06-04 | 2008-06-04 | Exciton spin control in AlGaInN quantum dots |
PCT/JP2009/060566 WO2009148183A1 (en) | 2008-06-04 | 2009-06-03 | Nitride semiconductor device |
Publications (2)
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JP2011523206A JP2011523206A (ja) | 2011-08-04 |
JP5198656B2 true JP5198656B2 (ja) | 2013-05-15 |
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JP2011510147A Expired - Fee Related JP5198656B2 (ja) | 2008-06-04 | 2009-06-03 | 窒化物半導体デバイス |
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Country | Link |
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US (1) | US20110079767A1 (ja) |
JP (1) | JP5198656B2 (ja) |
GB (1) | GB2460666A (ja) |
WO (1) | WO2009148183A1 (ja) |
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GB2460666A (en) * | 2008-06-04 | 2009-12-09 | Sharp Kk | Exciton spin control in AlGaInN quantum dots |
EP2457257B9 (en) | 2009-07-20 | 2014-03-26 | Soitec | Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures |
GB2476926B (en) * | 2009-11-06 | 2012-05-02 | Toshiba Res Europ Ltd | Tuneable quantum light source |
GB2479162B (en) * | 2010-03-30 | 2013-05-15 | Toshiba Res Europ Ltd | A quantum logic component and a method of controlling a qubit |
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WO2012089739A2 (de) * | 2010-12-28 | 2012-07-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher, verwendung eines informationsspeichers als passives display und sensoranordung |
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2008
- 2008-06-04 GB GB0810182A patent/GB2460666A/en not_active Withdrawn
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2009
- 2009-06-03 US US12/995,773 patent/US20110079767A1/en not_active Abandoned
- 2009-06-03 WO PCT/JP2009/060566 patent/WO2009148183A1/en active Application Filing
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GB0810182D0 (en) | 2008-07-09 |
US20110079767A1 (en) | 2011-04-07 |
GB2460666A (en) | 2009-12-09 |
WO2009148183A1 (en) | 2009-12-10 |
JP2011523206A (ja) | 2011-08-04 |
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