JP5165302B2 - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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JP5165302B2
JP5165302B2 JP2007199588A JP2007199588A JP5165302B2 JP 5165302 B2 JP5165302 B2 JP 5165302B2 JP 2007199588 A JP2007199588 A JP 2007199588A JP 2007199588 A JP2007199588 A JP 2007199588A JP 5165302 B2 JP5165302 B2 JP 5165302B2
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lead
bonding material
metal
semiconductor element
connection plate
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JP2009038126A (en
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博可 漆畑
浩和 福田
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On Semiconductor Trading Ltd
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Description

本発明は半導体装置およびその製造方法に関し、特に、金属接続板（クリップ）により半導体素子の電極とリードとが接続される半導体装置およびその製造方法に関する。   The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device in which an electrode and a lead of a semiconductor element are connected by a metal connection plate (clip) and a manufacturing method thereof.

図６を参照して、従来型の回路装置１００の構成について説明する。図６（Ａ）は回路装置１００の平面図であり、図６（Ｂ）はその断面図である（特許文献１）。   The configuration of the conventional circuit device 100 will be described with reference to FIG. 6A is a plan view of the circuit device 100, and FIG. 6B is a cross-sectional view thereof (Patent Document 1).

図６（Ａ）および図６（Ｂ）を参照して、回路装置１００の中央部には導電材料から成るランド１０２が形成され、ランド１０２の周囲には多数個のリード１０１の一端が接近している。リード１０１の一端は金属細線１０５を介して半導体素子１０４と電気的に接続され、他端は封止樹脂１０３から露出している。封止樹脂１０３は、半導体素子１０４、ランド１０２およびリード１０１を封止して一体に支持する働きを有する。   With reference to FIGS. 6A and 6B, a land 102 made of a conductive material is formed at the center of the circuit device 100, and one end of a large number of leads 101 approaches the land 102. ing. One end of the lead 101 is electrically connected to the semiconductor element 104 via the fine metal wire 105, and the other end is exposed from the sealing resin 103. The sealing resin 103 has a function of sealing and supporting the semiconductor element 104, the land 102 and the lead 101 integrally.

回路装置１００の製造方法は次の通りである。先ず、厚みが０．５ｍｍ程度の金属板を打ち抜き加工することで、リード１０１およびランド１０２を形成する。次に、ランド１０２の上面に半導体素子１０４を固着した後に、半導体素子１０４の上面に配置された電極とリード１０１とを金属細線１０５を用いて電気的に接続する。更に、トランスファーモールドを行うことで、半導体素子１０４、ランド１０２、リード１０１および金属細線１０５を封止樹脂１０３により被覆する。また、外部端子として機能する部分のリード１０１は封止樹脂１０３から露出させる。
特開平１１−３４０２５７号公報 The manufacturing method of the circuit device 100 is as follows. First, the lead 101 and the land 102 are formed by punching a metal plate having a thickness of about 0.5 mm. Next, after fixing the semiconductor element 104 to the upper surface of the land 102, the electrode disposed on the upper surface of the semiconductor element 104 and the lead 101 are electrically connected using the metal thin wire 105. Furthermore, the semiconductor element 104, the land 102, the lead 101, and the fine metal wire 105 are covered with the sealing resin 103 by performing transfer molding. In addition, the lead 101 that functions as an external terminal is exposed from the sealing resin 103.
JP 11-340257 A

しかしながら、上述した構成の回路装置１００では、金属細線１０５を経由して半導体素子１０４とリード１０１とが接続されるため、金属細線１０５の抵抗値の大きさがネックとなり、オン抵抗が増加してしまう問題があった。更に、半導体素子１０４の１つの電極に複数の金属細線１０５を接続すると、その抵抗値を小さくすることができるが、１つの電極に接続することができる金属細線の数には限りがあるので、飛躍的にオン抵抗を低減させることが困難であった。   However, in the circuit device 100 having the above-described configuration, the semiconductor element 104 and the lead 101 are connected via the thin metal wire 105, so that the resistance value of the fine metal wire 105 becomes a bottleneck, and the on-resistance increases. There was a problem. Furthermore, when a plurality of fine metal wires 105 are connected to one electrode of the semiconductor element 104, the resistance value can be reduced, but the number of fine metal wires that can be connected to one electrode is limited. It was difficult to dramatically reduce the on-resistance.

また、一方が半導体素子１０４の電極に接続されて他方がリード１０１の上面に固着される一枚の金属板から成る金属接続板を使用すると、金属接続板は金属細線よりは断面積が大きいので、上記した抵抗値を小さくすることができる。しかしながら、金属接続板は、半田等の導電性の接合材を介して半導体素子１０４の上面やリード１０１の上面に接合させる必要がある。このことから、金属接続板の下面に付着される接合材による接続の良否を視覚的に確認することが非常に困難であった。   Also, if a metal connection plate made of a single metal plate, one of which is connected to the electrode of the semiconductor element 104 and the other is fixed to the upper surface of the lead 101, the metal connection plate has a larger cross-sectional area than the metal thin wire. The resistance value described above can be reduced. However, the metal connection plate needs to be bonded to the upper surface of the semiconductor element 104 or the upper surface of the lead 101 via a conductive bonding material such as solder. For this reason, it was very difficult to visually confirm the quality of the connection by the bonding material attached to the lower surface of the metal connection plate.

本発明は、上述した問題を鑑みて成されたものである。本発明の主な目的は、接合材を介した金属接続板の接合の良否の確認を容易にすることができる半導体装置およびその製造方法を提供することにある。   The present invention has been made in view of the above-described problems. A main object of the present invention is to provide a semiconductor device and a method for manufacturing the same that can facilitate confirmation of the quality of joining of metal connection plates via a joining material.

本発明の半導体装置は、半導体素子と、前記半導体素子が上面に固着されるアイランドと、前記半導体素子と電気的に接続されるリードと、前記半導体素子の上面に形成された電極と接続される第１接続部および前記リードと接続される第２接続部を有する金属接続板とを具備し、接合材を介して前記リードに接合される前記金属接続板の前記第２接続部を部分的に窪ませて凹部を設け、前記金属接続板の前記第２接続部の下面が、前記接合材を介して前記リードの上面に接合され、前記リードの上面に塗布された前記接合材の一部が、前記凹部から視覚的に確認され、前記リードの端部を幅広にした接続部に、前記接合材を介して前記金属接続板の前記第２接続部が接続され、前記金属接続板の前記凹部は前記接続部と重畳して配置されることを特徴とする。
The semiconductor device of the present invention is connected to a semiconductor element, an island on which the semiconductor element is fixed, a lead electrically connected to the semiconductor element, and an electrode formed on the upper surface of the semiconductor element. A metal connecting plate having a first connecting portion and a second connecting portion connected to the lead, and partially connecting the second connecting portion of the metal connecting plate joined to the lead via a bonding material. A recess is provided, and the lower surface of the second connection portion of the metal connection plate is bonded to the upper surface of the lead via the bonding material, and a part of the bonding material applied to the upper surface of the lead is The second connection portion of the metal connection plate is connected to the connection portion that is visually confirmed from the recess and has a wide end portion of the lead via the bonding material, and the recess of the metal connection plate the Ru is arranged to overlap with the connecting portion And wherein the door.

本発明の半導体装置の製造方法は、アイランドの上面に固着された半導体素子および前記アイランドに接近する一端が幅広な接続部であるリードを用意する第１工程と、前記半導体素子の上面に設けられた電極に金属接続板の第１接続部を接続し、前記リードの前記接続部の上面に接合材を介して前記金属接続板の第２接続部を接続し、前記半導体素子と前記リードとを電気的に接続する第２工程と、を具備し、前記第２工程では、前記金属接続板の前記第２接続部を部分的に窪ませた凹部から、前記リードの前記接続部に塗布された前記接合材の一部を露出させることを特徴とする。
The method of manufacturing a semiconductor device according to the present invention includes a first step of preparing a semiconductor element fixed to an upper surface of an island and a lead having a wide connection portion at one end approaching the island, and the upper surface of the semiconductor element. A first connecting portion of a metal connecting plate connected to the electrode, a second connecting portion of the metal connecting plate connected to an upper surface of the connecting portion of the lead via a bonding material, and the semiconductor element and the lead A second step of electrically connecting, wherein in the second step, the second connection portion of the metal connection plate is applied to the connection portion of the lead from a concave portion partially recessed. A part of the bonding material is exposed.

本発明の半導体装置およびその製造方法によれば、金属接続板の一部を内側に窪ませて凹部を設け、この凹部から接合材の有無を視覚的に確認することによって、接続の良否が判定できる。従って、半田等の接合材を介して金属接続板が良好に接続されたか否かを容易に且つ視覚的に確認することができる。   According to the semiconductor device of the present invention and the method for manufacturing the same, whether or not the connection is good is determined by providing a recess by indenting a part of the metal connection plate and visually checking the presence or absence of a bonding material from the recess. it can. Therefore, it can be easily and visually confirmed whether or not the metal connection plate is satisfactorily connected via the bonding material such as solder.

更に、金属接続板に凹部を設けることにより、剰余の接合材をこの凹部に収納できるので、余分な接合材がリードの上面から外部に漏出することが防止される。   Furthermore, since a surplus bonding material can be stored in the recess by providing the metal connection plate with a recess, the excess bonding material is prevented from leaking out from the upper surface of the lead.

図１および図２を参照して、半導体装置１０の構成を説明する。   A configuration of the semiconductor device 10 will be described with reference to FIGS. 1 and 2.

図１（Ａ）は半導体装置１０の斜視図であり、図１（Ｂ）は平面図であり、図１（Ｃ）は断面図である。   1A is a perspective view of the semiconductor device 10, FIG. 1B is a plan view, and FIG. 1C is a cross-sectional view.

図１（Ａ）を参照して、半導体装置１０は、半導体素子１２と、半導体素子１２が実装されるアイランド１４と、金属接続板１６を介して半導体素子１２と電気的に接続されたリード２０と、半導体素子１２等を封止する封止樹脂３８とを主要に有する構成となっている。ここでは、複数のリード２０Ａ、２０Ｂ等をリード２０と総称する。半導体素子１２としては、ＭＯＳＦＥＴ（Ｍｅｔａｌ−Ｏｘｉｄｅ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）、バイポーラトランジスタ、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）等を採用可能である。例えば、半導体素子１２としてＭＯＳＦＥＴが採用されると、半導体素子１２の上面にゲート電極（電極３４：図１（Ｂ）参照）およびソース電極（電極３６：図１（Ｂ）参照）が設けられ、下面にドレイン電極が設けられる。また、半導体素子１２としてバイポーラトランジスタが採用されると、半導体素子１２の上面にベース電極（電極３４：図１（Ｂ）参照）およびエミッタ電極（電極３６：図１（Ｂ）参照）が設けられ、下面にコレクタ電極が設けられる。   Referring to FIG. 1A, a semiconductor device 10 includes a semiconductor element 12, an island 14 on which the semiconductor element 12 is mounted, and a lead 20 electrically connected to the semiconductor element 12 via a metal connection plate 16. And a sealing resin 38 for sealing the semiconductor element 12 and the like. Here, the plurality of leads 20A, 20B and the like are collectively referred to as leads 20. As the semiconductor element 12, a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor), a bipolar transistor, an IGBT (Insulated Gate Bipolar Transistor), or the like can be used. For example, when a MOSFET is employed as the semiconductor element 12, a gate electrode (electrode 34: see FIG. 1B) and a source electrode (electrode 36: see FIG. 1B) are provided on the upper surface of the semiconductor element 12, A drain electrode is provided on the lower surface. When a bipolar transistor is employed as the semiconductor element 12, a base electrode (electrode 34: see FIG. 1B) and an emitter electrode (electrode 36: see FIG. 1B) are provided on the upper surface of the semiconductor element 12. A collector electrode is provided on the lower surface.

図1（Ｂ）を参照して、半導体素子１２の上面に形成された２つの電極は、各々が金属接続板１６または金属細線１８を経由してリードと接続される。具体的には、電極３６は金属接続板１６を経由して、リード２０Ｇ、２０Ｆ、２０Ｅの接続部２６に接続される。一方、電極３４は、直径が数十μｍ程度のアルミニウムまたは金から成る金属細線１８を経由して、リード２０Ｈの接続部２４と接続される。ここで、主電流が通過するソース電極である電極３６は、制御用の電極である電極３４よりも面積が広く形成されている。   Referring to FIG. 1B, the two electrodes formed on the upper surface of semiconductor element 12 are each connected to a lead via metal connection plate 16 or metal thin wire 18. Specifically, the electrode 36 is connected to the connection portion 26 of the leads 20G, 20F, and 20E via the metal connection plate 16. On the other hand, the electrode 34 is connected to the connecting portion 24 of the lead 20H via a metal thin wire 18 made of aluminum or gold having a diameter of about several tens of μm. Here, the electrode 36 that is the source electrode through which the main current passes is formed to have a larger area than the electrode 34 that is the control electrode.

また、半導体素子１２として、上面に多数の電極が設けられたＬＳＩが採用されても良い。この場合は、ＬＳＩの電極に対応した数のリード２０が設けられ、各々の電極とリード２０とが金属細線１８と接続される。更に、他の電極よりも通過する電流の電流値が大きい電極は、上記した金属接続板１６を経由してリードと接続される。更に、ＬＳＩの裏面は、導電性または絶縁性の接合材を介してアイランド１４の上面に固着される。   Further, as the semiconductor element 12, an LSI having a large number of electrodes on the upper surface may be employed. In this case, the number of leads 20 corresponding to the electrodes of the LSI is provided, and each electrode and the lead 20 are connected to the metal thin wire 18. Furthermore, the electrode having a larger current value than the other electrodes is connected to the lead via the metal connection plate 16 described above. Further, the back surface of the LSI is fixed to the upper surface of the island 14 via a conductive or insulating bonding material.

アイランド１４は、厚みが０．５ｍｍ程度の導電箔をエッチング加工または打ち抜き加工することで形成される。アイランド１４の平面的な大きさは、上面に実装される半導体素子１２よりも若干大きい程度である。例えば、半導体素子１２の平面的なサイズが５．０ｍｍ×５．０ｍｍの場合は、アイランド１４の平面的なサイズは５．５ｍｍ×５．５ｍｍ程度である。更に、アイランド１４の上側辺および下側辺の中間部からは、吊りリード２２が封止樹脂３８の側面まで延在している。この吊りリード２２は、半導体装置製造工程にて、アイランド１４を安定して固定するために設けられるものである。しかしながら、この吊りリード２２を、他のリード２０Ａ等と同様の構成にして用いても良い。   The island 14 is formed by etching or punching a conductive foil having a thickness of about 0.5 mm. The planar size of the island 14 is slightly larger than the semiconductor element 12 mounted on the upper surface. For example, when the planar size of the semiconductor element 12 is 5.0 mm × 5.0 mm, the planar size of the island 14 is about 5.5 mm × 5.5 mm. Further, the suspension lead 22 extends to the side surface of the sealing resin 38 from an intermediate portion between the upper side and the lower side of the island 14. The suspension lead 22 is provided to stably fix the island 14 in the semiconductor device manufacturing process. However, the suspension lead 22 may be used in the same configuration as the other leads 20A and the like.

リード２０Ａ等は、アイランド１４と同様の方法により形成され、一端がアイランド１４の近傍に位置し、他端が封止樹脂３８から外部に露出している。封止樹脂３８から露出する部分のリード２０Ａ等はガルウイング状に折り曲げ加工され、リード２０Ａ等の外側の端部の下面は、封止樹脂３８の下面と同一平面上に位置している。   The leads 20A and the like are formed by the same method as that for the island 14, and one end is located near the island 14 and the other end is exposed to the outside from the sealing resin 38. The portion of the lead 20 </ b> A and the like exposed from the sealing resin 38 is bent into a gull wing shape, and the lower surface of the outer end of the lead 20 </ b> A and the like is located on the same plane as the lower surface of the sealing resin 38.

図１（Ｂ）を参照して、半導体装置１０では、装置全体を一体的に封止する四角形状の封止樹脂３８の両側辺から複数のリード２０Ａ等が外部に導出されている。具体的には、封止樹脂３８の左側の側辺から、４つのリード（リード２０Ｄ、リード２０Ｃ、リード、２０Ｂ、リード２０Ａ）の左側の端部が外部に導出している。そして、これらのリード２０Ｄ等の右側の端部は、アイランド１４に連続している。一方、封止樹脂３８の右側の側辺からも、４つのリード（リード２０Ｈ、リード２０Ｇ、リード２０Ｆ、リード２０Ｅ）の左側の端部が外部に露出している。そして、リード２０Ｈの左側の端部は、他の部分よりも幅広に形成された接続部２４であり、この接続部２４の上面に金属細線１８がボンディングされている。また、他のリード（リード２０Ｇ、リード２０Ｆ、リード２０Ｅ）の左側の端部は、一体的に接続部２６と連続している。この接続部２６の上面に金属接続板１６が接続される。ここで、接続部２４および接続部２６と、アイランド１４とは、同一平面上に配置されても良いし、アイランド１４の方が接続部２４等よりも上方に配置されても良いし下方に配置されても良い。   Referring to FIG. 1B, in the semiconductor device 10, a plurality of leads 20A and the like are led out from both sides of a rectangular sealing resin 38 that integrally seals the entire device. Specifically, the left ends of the four leads (lead 20D, lead 20C, lead, 20B, lead 20A) are led out from the left side of the sealing resin 38. The right end of these leads 20 </ b> D and the like continues to the island 14. On the other hand, the left ends of the four leads (lead 20H, lead 20G, lead 20F, and lead 20E) are also exposed to the outside from the right side of the sealing resin 38. The left end portion of the lead 20H is a connecting portion 24 formed wider than the other portions, and a thin metal wire 18 is bonded to the upper surface of the connecting portion 24. Further, the left ends of the other leads (the lead 20G, the lead 20F, and the lead 20E) are integrally connected to the connecting portion 26. The metal connection plate 16 is connected to the upper surface of the connection portion 26. Here, the connecting portion 24 and the connecting portion 26 and the island 14 may be disposed on the same plane, or the island 14 may be disposed above the connecting portion 24 or the like, or disposed below. May be.

封止樹脂３８は、トランスファーモールドにより形成される熱硬化性樹脂またはインジェクションモールドにより形成される熱可塑性樹脂からなり、リード２０Ａ等の一部、アイランド１４、半導体素子１２、金属細線１８、金属接続板１６を被覆して一体的に支持している。ここで、酸化金属等から成る粒子状のフィラーが混入された上記樹脂材料を封止樹脂３８の材料として採用しても良い。   The sealing resin 38 is made of a thermosetting resin formed by a transfer mold or a thermoplastic resin formed by an injection mold. A part of the lead 20A, the island 14, the semiconductor element 12, the metal thin wire 18, a metal connection plate, etc. 16 is covered and integrally supported. Here, the resin material mixed with particulate filler made of metal oxide or the like may be used as the material of the sealing resin 38.

図１（Ａ）および図１（Ｂ）を参照して、金属接続板１６の左側の端部は半導体素子１２の上面に設けられた電極３６に接続され、右側の端部はリード２０Ｇに連続する接続部２６の上面に固着されている。金属接続板１６の左側の端部の下面は、接合材３２を介して、半導体素子１２の上面に接合されて電気的に接続されている。接合材３２としては、銅などから成る金属粉が混入された樹脂材料から成る導電性ペーストや半田が採用される。ここでは、半導体素子１２の上面に設けられた電極３６が全面的に接続されるように、金属接続板１６が配置されている。一方、金属接続板１６の右側の端部は、リード２０Ｇ等の一部である接続部２６の上面に接合材３１を介して接合されて電気的に接続される。ここで、接合材３１としては、上記した接合材３２と同じ材料が採用される。また、金属接続板１６の中間部は、曲折加工が施されて一部は両端部よりも上方に位置しており、半導体素子１２の上面から離間されている。この様にすることで、半導体素子１２の上面の端部と金属接続板１６の中間部とが接触してショートすることが防止される。   1A and 1B, the left end of the metal connection plate 16 is connected to the electrode 36 provided on the upper surface of the semiconductor element 12, and the right end is continuous with the lead 20G. It is fixed to the upper surface of the connecting portion 26. The lower surface of the left end portion of the metal connection plate 16 is bonded and electrically connected to the upper surface of the semiconductor element 12 via the bonding material 32. As the bonding material 32, a conductive paste or solder made of a resin material mixed with metal powder made of copper or the like is employed. Here, the metal connection plate 16 is disposed so that the electrode 36 provided on the upper surface of the semiconductor element 12 is connected to the entire surface. On the other hand, the right end portion of the metal connection plate 16 is joined and electrically connected to the upper surface of the connection portion 26 that is a part of the lead 20G or the like via the bonding material 31. Here, as the bonding material 31, the same material as the bonding material 32 described above is employed. Further, the intermediate portion of the metal connection plate 16 is bent and a part thereof is located above both end portions and is separated from the upper surface of the semiconductor element 12. By doing so, it is possible to prevent the end portion of the upper surface of the semiconductor element 12 and the intermediate portion of the metal connection plate 16 from coming into contact with each other and causing a short circuit.

図２を参照して、半導体素子１２の接続に使用される金属接続板１６の構成を更に説明する。図２（Ａ）は図１（Ｂ）の平面図を部分的に抜き出して拡大した図であり、図２（Ｂ）は金属接続板１６の断面図である。   With reference to FIG. 2, the structure of the metal connection board 16 used for the connection of the semiconductor element 12 is further demonstrated. 2A is a partially extracted plan view of FIG. 1B and is an enlarged view, and FIG. 2B is a cross-sectional view of the metal connection plate 16.

図２（Ａ）を参照して、金属接続板１６は、半導体素子１２の上面に設けられた電極３６と接続される第１接続部と、リードの接続部２６と接続される第２接続部４２と、第１接続部４０と第２接続部４２とを連続させる中間部４４とを備えた構成となっている。そして、金属接続板１６の平面的な概略的形状は、第１接続部４０が四角形形状（より具体的には正方形形状）であり、第１接続部４０の右側の側辺の下部が右側に突出した形状を呈している。そして、この突出する部位の右側の先端部が第２接続部４２と成っている。また、金属接続板１６は、厚みが０．１ｍｍ〜０．５ｍｍ程度のアルミニウムまたは銅を主体とする一枚の金属板を所定の平面的形状に成形した後に、折り曲げ加工することで得られる。   Referring to FIG. 2A, the metal connection plate 16 includes a first connection portion connected to the electrode 36 provided on the upper surface of the semiconductor element 12 and a second connection portion connected to the lead connection portion 26. 42 and an intermediate portion 44 that connects the first connection portion 40 and the second connection portion 42 to each other. The planar schematic shape of the metal connection plate 16 is such that the first connection portion 40 has a quadrangular shape (more specifically, a square shape), and the lower part of the right side of the first connection portion 40 is on the right side. It has a protruding shape. The right end portion of the protruding portion is the second connection portion 42. The metal connection plate 16 is obtained by forming a single metal plate mainly made of aluminum or copper having a thickness of about 0.1 mm to 0.5 mm into a predetermined planar shape and then bending the metal plate.

第２接続部４２の先端部を内側に窪ませることにより凹部２８が形成されている。ここでは、第２接続部４２の先端部を、湾曲を呈するように切り欠くことで凹部２８が形成されている。そして、本実施の形態では、凹部２８の内側に対応する領域の接続部２６の上面に接合材３１を露出させている。   A recess 28 is formed by recessing the tip of the second connection portion 42 inward. Here, the recessed part 28 is formed by notching the front-end | tip part of the 2nd connection part 42 so that a curve may be exhibited. In the present embodiment, the bonding material 31 is exposed on the upper surface of the connection portion 26 in a region corresponding to the inside of the recess 28.

本実施の形態では、金属接続板１６の先端部に凹部２８を設けることにより、接合材３１による金属接続板１６と接続部２６との接続の良否を視覚的に且つ容易に確認することができる。具体的には、例えば接合材３１として半田が採用された場合は、次の方法により金属接続板１６の第２接続部４２は、接続部２６に接合される。即ち、接続部２６の上面に半田ペーストを塗布し、塗布された半田ペーストの上面に金属接続板１６の第２接続部４２を載置し、更に、半田ペーストを加熱溶融して半田（接合材３１）とすることにより、金属接続板１６の第２接続部４２は接続部２６に電気的に接続される。そして、両者を接続するために必要とされる半田が十分に存在したら、半田である接合材３１は凹部２８の内側の領域まで延在する。一方、接合材３１の量が不十分であれば、凹部２８の内側に接合材３１は存在しない。更に、凹部２８の内側の領域は、半導体素子の上方から目視確認できるので、極めて容易且つ確実に、金属接続板１６による接合の良否判定を行うことができる。   In the present embodiment, it is possible to visually and easily confirm the quality of the connection between the metal connecting plate 16 and the connecting portion 26 by the bonding material 31 by providing the concave portion 28 at the tip of the metal connecting plate 16. . Specifically, for example, when solder is used as the bonding material 31, the second connection portion 42 of the metal connection plate 16 is bonded to the connection portion 26 by the following method. That is, a solder paste is applied to the upper surface of the connection portion 26, the second connection portion 42 of the metal connection plate 16 is placed on the upper surface of the applied solder paste, and the solder paste is heated and melted to solder (joining material). 31), the second connection portion 42 of the metal connection plate 16 is electrically connected to the connection portion 26. Then, if there is sufficient solder necessary to connect the two, the bonding material 31 that is solder extends to a region inside the recess 28. On the other hand, if the amount of the bonding material 31 is insufficient, the bonding material 31 does not exist inside the recess 28. Furthermore, since the region inside the recess 28 can be visually confirmed from above the semiconductor element, it is possible to determine whether or not the metal connection plate 16 is good or bad extremely easily and reliably.

更に、比較的多量の接合材３１が接続部２６に塗布されたとしても、金属接続板１６の第２接続部４２の下面と接続部２６の上面との間から外側にはみ出した接合材３１は、凹部２８に収納される。従って、はみ出した接合材３１の外部への流出が防止されるので、不良品の発生が抑制され、結果的に歩溜まりが向上される。   Furthermore, even if a relatively large amount of the bonding material 31 is applied to the connection portion 26, the bonding material 31 that protrudes outward from between the lower surface of the second connection portion 42 of the metal connection plate 16 and the upper surface of the connection portion 26 is , Stored in the recess 28. Accordingly, since the protruding bonding material 31 is prevented from flowing out to the outside, the occurrence of defective products is suppressed, and as a result, the yield is improved.

上記した技術事項は、導電性ペーストが接合材３１として採用されても同様である。   The technical matters described above are the same even when a conductive paste is employed as the bonding material 31.

開口部３０は、金属接続板１６を部分的に開口（貫通）させた部位であり、具体的には、金属接続板１６の中間部４４を開口することで開口部３０が設けられている。そして、金属接続板１６の第１接続部と半導体素子１２の電極３６とを接合させる接合材３２が、開口部３０に露出している。この開口部３０の役割は、上述した凹部２８と同様である。即ち、必要十分な量の接合材３１（半田または導電性ペースト）が半導体素子１２の電極３６と第１接続部４０との間に供給されると、両者の間から接合材３１が開口部３０の左側端部にはみ出す。また、開口部３０の左側端部は、第１接続部４０と同一平面上の中間部４４に設けられているので、開口部３０は、剰余の接合材３２が移動しやすい環境である。そして、開口部３０にはみ出した接合材３２が視覚的に確認できたら、接合材３１による金属接続板１６の第１接続部４０と半導体素子１２の電極３６との接合は良となる。一方、接合材３２が開口部３０から目視的に確認できなければ、この接続は不十分であると判定される。更にこの開口部３０は、剰余の接合材３２を貯留（収納）させて、接合材３２の外側への流出を防止する機能も有する。   The opening 30 is a portion where the metal connection plate 16 is partially opened (penetrated). Specifically, the opening 30 is provided by opening the intermediate portion 44 of the metal connection plate 16. A bonding material 32 that bonds the first connection portion of the metal connection plate 16 and the electrode 36 of the semiconductor element 12 is exposed to the opening 30. The role of the opening 30 is the same as that of the recess 28 described above. That is, when a necessary and sufficient amount of the bonding material 31 (solder or conductive paste) is supplied between the electrode 36 of the semiconductor element 12 and the first connection portion 40, the bonding material 31 is opened from the gap between them. Protrudes to the left edge of the. Further, since the left end portion of the opening 30 is provided in the intermediate portion 44 on the same plane as the first connection portion 40, the opening 30 is an environment in which the surplus bonding material 32 is easy to move. When the bonding material 32 protruding from the opening 30 can be visually confirmed, the bonding between the first connection portion 40 of the metal connection plate 16 and the electrode 36 of the semiconductor element 12 by the bonding material 31 is good. On the other hand, if the bonding material 32 cannot be visually confirmed from the opening 30, this connection is determined to be insufficient. Further, the opening 30 has a function of storing (accommodating) surplus bonding material 32 and preventing the bonding material 32 from flowing out to the outside.

更に、金属接続板１６の第１接続部４０の上面には、認識マーク４８が形成されている。この認識マーク４８は刻印または印刷により形成され、図示した略十字型または略卍型の形状以外の形状でも採用可能であり、金属接続板１６の平面的な位置および角度が確認できる形状であればよい。本実施の形態では、上記したように、金属接続板１６の凹部２８や開口部３０から接合材３２をはみ出させている。そして、金属接続板１６の材料は金属であり、更に接合材３１の材料も金属である。従って、両者の境界線を視覚的に抽出するのは困難であるので、金属接続板１６の平面的な位置を、金属接続板１６の外形形状を利用して行うことは容易ではない。そこでここでは、金属接続板１６の上面に認識マーク４８を形成し、この認識マーク４８の位置を確認することにより、金属接続板１６が平面的に所定の位置に固着されたか否かを確認している。   Further, a recognition mark 48 is formed on the upper surface of the first connection portion 40 of the metal connection plate 16. This recognition mark 48 is formed by engraving or printing, and can be adopted in shapes other than the substantially cross-shaped or substantially saddle-shaped shape shown in the figure, and any shape that can confirm the planar position and angle of the metal connection plate 16 can be used. Good. In the present embodiment, as described above, the bonding material 32 protrudes from the recess 28 or the opening 30 of the metal connection plate 16. The material of the metal connection plate 16 is metal, and the material of the bonding material 31 is also metal. Therefore, since it is difficult to visually extract the boundary line between the two, it is not easy to perform the planar position of the metal connection plate 16 using the outer shape of the metal connection plate 16. Therefore, here, a recognition mark 48 is formed on the upper surface of the metal connection plate 16, and by confirming the position of the recognition mark 48, it is confirmed whether or not the metal connection plate 16 is fixed at a predetermined position in a plane. ing.

ここで、上記では、所謂リードフレーム型の半導体装置１０を例に構造を説明したが、他の形態の半導体装置に上記した本実施の形態を適用させることもできる。例えば、導電パターンと、導電パターンに実装された半導体素子と、導電パターンと半導体素子とを接続させる金属接続板と、導電パターンの下面を露出させた状態でこれらの構成要素を被覆する封止樹脂とを具備する半導体装置に上記構造を適用させることができる。   Here, in the above description, the structure of the so-called lead frame type semiconductor device 10 has been described as an example. However, the above-described embodiment can also be applied to other types of semiconductor devices. For example, a conductive pattern, a semiconductor element mounted on the conductive pattern, a metal connection plate that connects the conductive pattern and the semiconductor element, and a sealing resin that covers these components with the lower surface of the conductive pattern exposed The above structure can be applied to a semiconductor device including the above.

更には、上面が絶縁層により被覆された金属基板と、絶縁層上に形成された導電パターンと、導電パターンに実装された半導体素子と、半導体素子と導電パターンとを接続させる金属接続板とを具備する回路装置（混成集積回路装置）に、上記構造を適用させることもできる。   Furthermore, a metal substrate whose upper surface is covered with an insulating layer, a conductive pattern formed on the insulating layer, a semiconductor element mounted on the conductive pattern, and a metal connection plate for connecting the semiconductor element and the conductive pattern The above structure can also be applied to a circuit device (hybrid integrated circuit device).

図３から図５を参照して、次に、上記した構成の半導体装置１０の製造方法を説明する。なお、以下に於いて、上記した構造の説明と重複する部分は省略する場合もある。   Next, a method for manufacturing the semiconductor device 10 having the above-described configuration will be described with reference to FIGS. In addition, in the following, the part which overlaps with description of the above-mentioned structure may be abbreviate | omitted.

先ず、図３を参照して、リードフレーム５０を加工することにより、複数のユニット５４を設ける。図３（Ａ）はリードフレーム５０全体を示す平面図であり、図３（Ｂ）は１つのユニット５４を斜め上方から見た斜視図である。   First, referring to FIG. 3, a plurality of units 54 are provided by processing the lead frame 50. FIG. 3A is a plan view showing the entire lead frame 50, and FIG. 3B is a perspective view of one unit 54 viewed obliquely from above.

図３（Ａ）を参照して、厚みが例えば０．５ｍｍ程度の導電箔に対して、プレス加工やエッチングを行うことで、数個〜数百個のユニット５４が外枠５２の内部に設けられたリードフレーム５０を形成する。ここでユニットとは、１つの半導体装置を構成する要素単位のことである。この図では、額縁状の外枠５２と連結された７個のユニット５４が図示されているが、外枠５２の内部にマトリックス状に多数個のユニット５４が設けられても良い。   With reference to FIG. 3 (A), several to several hundred units 54 are provided inside the outer frame 52 by pressing or etching a conductive foil having a thickness of, for example, about 0.5 mm. The formed lead frame 50 is formed. Here, the unit is an element unit constituting one semiconductor device. In this figure, seven units 54 connected to the frame-shaped outer frame 52 are shown, but a large number of units 54 may be provided in a matrix in the outer frame 52.

リードフレーム５０を所定の形状に成形するための加工方法としては、プレス加工またはエッチング加工が考えられるが、プレス加工の方が容易であり低コストで行えるので好適である。リードフレーム５０の材料としては、銅または鉄を主材料とする金属や合金が採用される。   As a processing method for forming the lead frame 50 into a predetermined shape, press processing or etching processing can be considered. However, the press processing is easier and can be performed at a lower cost, which is preferable. As a material of the lead frame 50, a metal or an alloy mainly composed of copper or iron is employed.

更に、図３（Ａ）のユニット５４を参照すると、上側および下側の外枠５２から複数のリードが内部に連続して延在している。そして、各ユニット５４の両側には、外枠５２から上下方向に延在する細長い連結部４６が設けられ、アイランド１４の両側は吊りリード２２を経由して（図３（Ｂ）参照）連結部４６と接続されている。   Further, referring to the unit 54 of FIG. 3A, a plurality of leads extend continuously from the upper and lower outer frames 52 to the inside. And, on both sides of each unit 54, elongated connecting portions 46 extending in the vertical direction from the outer frame 52 are provided, and both sides of the island 14 are connected via the suspension leads 22 (see FIG. 3B). 46 is connected.

図３（Ｂ）を参照して、ユニット５４は、アイランド１４およびリード２０を具備している。この構造は、図１を参照して説明したとおりである。具体的には、中央部に四角形状のアイランド１４が配置されている。そして、アイランド１４の左側側辺から連続して外側に４本のリード（リード２０Ａ、リード２０Ｂ、リード２０Ｃ、リード２０Ｄ）が延在している。更に、アイランド１４の右側には、４本のリード（リード２０Ｅ、リード２０Ｆ、リード２０Ｇ、リード２０Ｈ）が配置されている。そして、リード２０Ｅ、２０Ｆ、２０Ｇの左側の端部は接続部２６に連続している。また、リード２０Ｈの左側の端部は、幅広の接続部２４として形成されている。   Referring to FIG. 3B, the unit 54 includes an island 14 and leads 20. This structure is as described with reference to FIG. Specifically, a quadrangular island 14 is arranged at the center. Then, four leads (lead 20A, lead 20B, lead 20C, lead 20D) extend outward from the left side of the island 14 continuously. Furthermore, four leads (lead 20E, lead 20F, lead 20G, and lead 20H) are arranged on the right side of the island 14. The left ends of the leads 20E, 20F, and 20G are continuous with the connecting portion 26. The left end of the lead 20H is formed as a wide connecting portion 24.

図４（Ａ）および図４（Ｂ）を参照して、次に、各ユニット５４の上面に半導体素子１２を固着する。半導体素子１２の固着は、半田等の導電性接合材またはエポキシ樹脂等の絶縁性接合材を介して行われる。また、共晶結合により半導体素子１２の裏面がアイランド１４の上面に固着されても良い。ここで、半導体素子１２としては、上記したように、ＭＯＳＦＥＴ、バイポーラトランジスタ、ＩＧＢＴ、ＩＣ、ＬＳＩ、ダイオード等が採用できる。本工程では、リードフレーム５０の全てのユニット５４に対して、一括して半導体素子１２のダイボンディングが行われる。   Next, referring to FIGS. 4A and 4B, the semiconductor element 12 is fixed to the upper surface of each unit 54. The semiconductor element 12 is fixed through a conductive bonding material such as solder or an insulating bonding material such as epoxy resin. Further, the back surface of the semiconductor element 12 may be fixed to the upper surface of the island 14 by eutectic bonding. Here, as described above, a MOSFET, a bipolar transistor, an IGBT, an IC, an LSI, a diode, or the like can be adopted as the semiconductor element 12. In this step, die bonding of the semiconductor elements 12 is performed collectively for all the units 54 of the lead frame 50.

図５（Ａ）、図５（Ｂ）および図５（Ｃ）を参照して、次に、各ユニット５４に於いて、半導体素子１２の上面に設けられた電極とリードとを電気的に接続する。図５（Ａ）は本工程に於けるリードフレーム５０を示す平面図であり、図５（Ｂ）は１つのユニット５４を示す斜視図であり、図５（Ｃ）はユニット５４を拡大して示す平面図である。   5A, 5B, and 5C, next, in each unit 54, the electrode provided on the upper surface of the semiconductor element 12 and the lead are electrically connected. To do. 5A is a plan view showing the lead frame 50 in this step, FIG. 5B is a perspective view showing one unit 54, and FIG. 5C is an enlarged view of the unit 54. FIG. FIG.

図５（Ａ）を参照して、本工程では、リードフレーム５０の各ユニット５４に於いて、半導体素子１２の電極とリードとを、金属細線１８および金属接続板１６を使用して電気的に接続する。   Referring to FIG. 5A, in this step, in each unit 54 of lead frame 50, the electrodes and leads of semiconductor element 12 are electrically connected using thin metal wires 18 and metal connection plate 16. Connecting.

図５（Ｂ）を参照して、半導体素子１２の上面の電極３４（例えばゲート電極）は、直径が数十μｍ程度のアルミニウムまたは金から成る金属細線１８を経由して、リード２０Ｈの端部に形成された接続部２４の上面と接続される。   Referring to FIG. 5B, an electrode 34 (for example, a gate electrode) on the upper surface of the semiconductor element 12 is connected to the end of the lead 20H via a thin metal wire 18 made of aluminum or gold having a diameter of about several tens of μm. It is connected to the upper surface of the connection part 24 formed in the above.

一方、金属接続板１６の左側の端部は、半導体素子１２の上面に形成された電極３６（例えばソース電極）に接続され、右側の端部がリード２０Ｅ等の一部である接続部２６の上面に接続される。金属接続板１６と半導体素子１２との接続および金属接続板１６と接続部２６とは、半田等の接合材を介して接続される。ゲート電極である電極３４と比較して、ソース電極である電極３６は大電流が流れる。従って、電流が流れる方向に対して断面積が大きい金属接続板１６を、電極３６の接続に用いることによって、装置全体のオン抵抗を引き下げることができる。金属接続板１６を接続させる接合材としては、半田または導電性ペーストが採用される。   On the other hand, the left end portion of the metal connection plate 16 is connected to an electrode 36 (for example, a source electrode) formed on the upper surface of the semiconductor element 12, and the right end portion of the connection portion 26 is a part of the lead 20E or the like. Connected to the top surface. The connection between the metal connection plate 16 and the semiconductor element 12 and the metal connection plate 16 and the connection portion 26 are connected via a bonding material such as solder. Compared with the electrode 34 which is a gate electrode, a large current flows through the electrode 36 which is a source electrode. Therefore, the on-resistance of the entire device can be lowered by using the metal connection plate 16 having a large cross-sectional area with respect to the direction in which the current flows for connection of the electrode 36. As a bonding material for connecting the metal connection plate 16, solder or conductive paste is employed.

ここで、金属接続板１６の固着は、半導体素子１２の電極３６および接続部２６に半田ペーストを塗布させる工程と、この半田ペーストの上面に金属接続板１６を載置させる工程と、半田ペーストを溶融して半田とすることで金属接続板１６を接合させる工程とを含む。一方、接合材として導電性ペーストが採用された場合は、電極３６および接続部２６に、液状または半固形状の導電性ペーストを塗布する工程と、塗布された導電性ペーストに金属接続板１６を載置する工程と、導電性ペーストに含まれる熱硬化性樹脂を加熱硬化させる工程が必要とされる。   Here, the fixing of the metal connection plate 16 includes a step of applying a solder paste to the electrode 36 and the connection portion 26 of the semiconductor element 12, a step of placing the metal connection plate 16 on the upper surface of the solder paste, and a solder paste. And a step of joining the metal connecting plate 16 by melting it into solder. On the other hand, when a conductive paste is adopted as the bonding material, a step of applying a liquid or semi-solid conductive paste to the electrode 36 and the connection portion 26, and the metal connection plate 16 to the applied conductive paste. A step of placing and a step of heat-curing the thermosetting resin contained in the conductive paste are required.

更に、図５（Ｃ）を参照して、金属接続板１６は、半導体素子１２に接続される第１接続部４０と、リードの接続部２６に接続される第２接続部４２と、第１接続部４０と第２接続部とを連続させる中間部４４とから成る。そして、第１接続部４０は、接合材３２を介して半導体素子１２の上面に設けられた電極３６と接合される。また、第２接続部４２は、接合材３１を介して接続部２６と接合される。   5C, the metal connection plate 16 includes a first connection portion 40 connected to the semiconductor element 12, a second connection portion 42 connected to the lead connection portion 26, and a first connection portion. It comprises an intermediate portion 44 that connects the connecting portion 40 and the second connecting portion. The first connection portion 40 is bonded to the electrode 36 provided on the upper surface of the semiconductor element 12 through the bonding material 32. Further, the second connection part 42 is joined to the connection part 26 via the joining material 31.

本実施の形態では、接合材の外部への流出防止および視覚的な確認性の向上のために、金属接続板１６に凹部２８および開口部３０を設けている。   In the present embodiment, the recess 28 and the opening 30 are provided in the metal connection plate 16 in order to prevent the bonding material from flowing out and to improve visual confirmation.

凹部２８は、金属接続板１６の第２接続部４２の端部を内側に窪ませて設けられた部位である。そして、金属接続板１６の第２接続部４２の下面と接続部２６の上面との間に、所定量以上の接合材３１が塗布されたら、凹部２８に接合材３１が染み出してくる。更に、剰余の接合材３１が凹部２８に収納されることで、接合材３１の外部への流出が防止される。   The concave portion 28 is a portion provided by denting the end of the second connection portion 42 of the metal connection plate 16 inward. When a predetermined amount or more of the bonding material 31 is applied between the lower surface of the second connection portion 42 of the metal connection plate 16 and the upper surface of the connection portion 26, the bonding material 31 oozes out into the recess 28. Furthermore, since the surplus bonding material 31 is stored in the recess 28, the bonding material 31 is prevented from flowing out to the outside.

また、開口部３０も凹部２８と略同様の作用を有し、半導体素子１２の電極３６の上面と、金属接続板１６の第１接続部４０との間に、必要とされる量以上の接合材３１が塗布されたら、開口部３０に接合材３２が染み出るように設定されている。また、開口部３０は、剰余の接合材３２を収納させる機能も有し、このことにより接合材３２が外部に漏出することによるショートの発生が防止される。   In addition, the opening 30 has substantially the same function as that of the recess 28, and a bonding exceeding the required amount is provided between the upper surface of the electrode 36 of the semiconductor element 12 and the first connection portion 40 of the metal connection plate 16. When the material 31 is applied, the bonding material 32 is set to ooze out from the opening 30. Further, the opening 30 also has a function of accommodating the surplus bonding material 32, and this prevents occurrence of a short circuit due to leakage of the bonding material 32 to the outside.

図５（Ｃ）を参照して、上記工程が終了して、金属接続板１６が固着された後に、この固着の良否判定を行う。具体的には、ＣＣＤカメラや作業員による目視により、凹部２８の内部に対応する領域の接続部２６の上面に、接合材３１が露出しているか否かを確認する。凹部２８の内部に接合材３１が確認されれば、金属接続板１６の第２接続部４２と接続部２６とは十分な量の接合材３１により接合されていると判断され、このユニットに対して次工程が行われる。一方、凹部２８の内部に接合材３１の存在が視覚的に確認されなければ、この接合が不十分であり不良が発生していると判断され、このユニットに対しては次工程が行われない。   Referring to FIG. 5C, after the above process is completed and the metal connection plate 16 is fixed, whether or not the fixing is good is determined. Specifically, whether or not the bonding material 31 is exposed on the upper surface of the connection portion 26 in a region corresponding to the inside of the recess 28 is confirmed by visual observation with a CCD camera or an operator. If the bonding material 31 is confirmed inside the recess 28, it is determined that the second connection portion 42 and the connection portion 26 of the metal connection plate 16 are bonded by a sufficient amount of the bonding material 31. The next process is performed. On the other hand, if the presence of the bonding material 31 is not visually confirmed inside the recess 28, it is determined that this bonding is insufficient and a defect has occurred, and the next process is not performed on this unit. .

更に、上記確認作業は開口部３０に対しても行われる。即ち、開口部３０から接合材３２の存在が視覚的に確認されたら、金属接続板１６の第１接続部４０と、半導体素子１２の電極３６とが正常に接合されたと判断され、このユニットに対して次工程が行われる。する。一方、開口部３０から接合材３１の存在が視覚的に確認されなければ、上記接続に不良が発生していると判断され、このユニットに対しては次工程以降が行われない。   Further, the above confirmation work is also performed on the opening 30. That is, when the presence of the bonding material 32 is visually confirmed from the opening 30, it is determined that the first connection portion 40 of the metal connection plate 16 and the electrode 36 of the semiconductor element 12 are normally bonded. On the other hand, the next step is performed. To do. On the other hand, if the presence of the bonding material 31 is not visually confirmed from the opening 30, it is determined that a defect has occurred in the connection, and the subsequent steps are not performed for this unit.

即ち、凹部２８および開口部３０の両方にて接合材が視覚的に確認されたら接続が良と判定され、どちらか一方にて接合材が確認されなければ接続不良と判定される。   That is, if the bonding material is visually confirmed in both the recess 28 and the opening 30, the connection is determined to be good, and if the bonding material is not confirmed in either one, it is determined that the connection is poor.

次に、図５（Ｃ）を参照して、先工程にて接合された金属接続板１６の位置を確認する。ここでは、金属接続板１６の上面に形成された認識マーク４８の位置をＣＣＤカメラ等の撮像手段にて視覚的に確認することで、金属接続板１６全体の平面的な位置および角度を確認している。そして、金属接続板１６の平面的な位置および角度が所定範囲内のものであれば、その金属接続板１６が設置されたユニットに対して次工程が施される。一方、金属接続板１６の位置または角度が所定範囲外であれば、誤った位置に金属接続板１６が接続されているので、その金属接続板１６が設置されたユニットに対しては次工程以降の工程が行われない。   Next, with reference to FIG.5 (C), the position of the metal connection board 16 joined by the previous process is confirmed. Here, the position of the recognition mark 48 formed on the upper surface of the metal connection plate 16 is visually confirmed by an imaging means such as a CCD camera, thereby confirming the planar position and angle of the entire metal connection plate 16. ing. If the planar position and angle of the metal connection plate 16 are within a predetermined range, the next step is performed on the unit on which the metal connection plate 16 is installed. On the other hand, if the position or angle of the metal connection plate 16 is out of the predetermined range, the metal connection plate 16 is connected to an incorrect position. This process is not performed.

ここで、上記した接合材３１および接合材３２の確認および金属接続板１６の位置確認は、ＣＣＤ等の撮像手段または目視により一括して同時に行っても良い。   Here, the confirmation of the bonding material 31 and the bonding material 32 and the position confirmation of the metal connection plate 16 may be simultaneously performed simultaneously by an imaging means such as a CCD or by visual observation.

上記工程が終了した後は、リードフレーム５０の各ユニット５４を、モールド金型に個別に収納させて樹脂封止の工程を行う。具体的には、樹脂封止の工程では、各ユニットの半導体素子、アイランド、金属細線、金属接続板およびリードが封止樹脂により封止される。更に、封止樹脂から露出するリードの表面にメッキ膜を被着させる工程、樹脂封止された各ユニットをリードフレームから個別に分離する工程、各ユニットの良否や電気的特性を測定する工程、捺印工程等を経て、図１に示す構成の半導体装置１０が完成する。   After the above process is completed, each unit 54 of the lead frame 50 is individually housed in a mold and a resin sealing process is performed. Specifically, in the resin sealing step, the semiconductor elements, islands, metal wires, metal connection plates, and leads of each unit are sealed with a sealing resin. Furthermore, a step of depositing a plating film on the surface of the lead exposed from the sealing resin, a step of individually separating each resin-sealed unit from the lead frame, a step of measuring the quality and electrical characteristics of each unit, Through the stamping process and the like, the semiconductor device 10 having the configuration shown in FIG. 1 is completed.

本発明の半導体装置を示す図であり、（Ａ）は斜視図であり、（Ｂ）は平面図であり、（Ｃ）は断面図である。BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the semiconductor device of this invention, (A) is a perspective view, (B) is a top view, (C) is sectional drawing. 本発明の半導体装置を示す図であり、（Ａ）は平面図であり、（Ｂ）は金属接続板の断面図である。It is a figure which shows the semiconductor device of this invention, (A) is a top view, (B) is sectional drawing of a metal connection board. 本発明の半導体装置の製造方法を示す図であり、（Ａ）は平面図であり、（Ｂ）は斜視図である。It is a figure which shows the manufacturing method of the semiconductor device of this invention, (A) is a top view, (B) is a perspective view. 本発明の半導体装置の製造方法を示す図であり、（Ａ）は平面図であり、（Ｂ）は斜視図である。It is a figure which shows the manufacturing method of the semiconductor device of this invention, (A) is a top view, (B) is a perspective view. 本発明の半導体装置の製造方法を示す図であり、（Ａ）は平面図であり、（Ｂ）は斜視図であり、（Ｃ）は平面図である。It is a figure which shows the manufacturing method of the semiconductor device of this invention, (A) is a top view, (B) is a perspective view, (C) is a top view. 背景技術の回路装置を示す図であり、（Ａ）は平面図であり、（Ｂ）は断面図である。It is a figure which shows the circuit apparatus of background art, (A) is a top view, (B) is sectional drawing.

符号の説明Explanation of symbols


１０ 半導体装置
１２ 半導体素子
１４ アイランド
１６ 金属接続板
１８ 金属細線
２０、２０Ａ、２０Ｂ、２０Ｃ、２０Ｄ、２０Ｅ、２０Ｆ、２０Ｇ、２０Ｈ リード
２２ 吊りリード
２４ 接続部
２６ 接続部
２８ 凹部
３０ 開口部
３１ 接合材
３２ 接合材
３４ 電極
３６ 電極
３８ 封止樹脂
４０ 第１接続部
４２ 第２接続部
４４ 中間部
４６ 連結部
４８ 認識マーク
５０ リードフレーム
５２ 外枠
５４ ユニット
DESCRIPTION OF SYMBOLS 10 Semiconductor device 12 Semiconductor element 14 Island 16 Metal connection board 18 Metal thin wire 20, 20A, 20B, 20C, 20D, 20E, 20F, 20G, 20H Lead 22 Hanging lead 24 Connection part 26 Connection part 28 Recess 30 Opening part 31 Bonding material 32 Bonding material 34 Electrode 36 Electrode 38 Sealing resin 40 First connection portion 42 Second connection portion 44 Intermediate portion 46 Connection portion 48 Recognition mark 50 Lead frame 52 Outer frame 54 Unit

Claims (12)

半導体素子と、
前記半導体素子が上面に固着されるアイランドと、
前記半導体素子と電気的に接続されるリードと、
前記半導体素子の上面に形成された電極と接続される第１接続部および前記リードと接続される第２接続部を有する金属接続板とを具備し、
接合材を介して前記リードに接合される前記金属接続板の前記第２接続部を部分的に窪ませて凹部を設け、
前記金属接続板の前記第２接続部の下面が、前記接合材を介して前記リードの上面に接合され、
前記リードの上面に塗布された前記接合材の一部が、前記凹部から視覚的に確認され、
前記リードの端部を幅広にした接続部に、前記接合材を介して前記金属接続板の前記第２接続部が接続され、前記金属接続板の前記凹部は前記接続部と重畳して配置されることを特徴とする半導体装置。 A semiconductor element;
An island on which the semiconductor element is fixed to the upper surface;
A lead electrically connected to the semiconductor element;
A metal connection plate having a first connection portion connected to the electrode formed on the upper surface of the semiconductor element and a second connection portion connected to the lead;
A recess is provided by partially denting the second connection part of the metal connection plate to be joined to the lead via a joining material;
The lower surface of the second connection portion of the metal connection plate is bonded to the upper surface of the lead via the bonding material,
A part of the bonding material applied to the upper surface of the lead is visually confirmed from the recess,
The second connection portion of the metal connection plate is connected to the connection portion having a wide end portion of the lead via the bonding material, and the concave portion of the metal connection plate is disposed so as to overlap the connection portion. A semiconductor device. 前記接合材の一部を前記凹部に収納させることを特徴とする請求項１に記載の半導体装置。 The semiconductor device according to claim 1 , wherein a part of the bonding material is stored in the recess. 前記金属接続板の前記第１接続部と前記第２接続部との間の中間部は、厚み方向に曲折する曲折部が設けられ、前記中間部は前記半導体素子の上面から離間されることを特徴とする請求項１または請求項２に記載の半導体装置。 The intermediate portion between the first connection portion and the second connection portion of the metal connection plate is provided with a bent portion that bends in the thickness direction, and the intermediate portion is separated from the upper surface of the semiconductor element. 3. The semiconductor device according to claim 1 , wherein the semiconductor device is characterized. 前記金属接続板を部分的に開口させた開口部を設け、
前記半導体素子の前記電極と前記金属接続板とを接合させる接合材の一部が、前記開口部から視覚的に確認可能であることを特徴とする請求項１から請求項３の何れか記載の半導体装置。 Providing an opening partly opening the metal connection plate;
Wherein said electrode of the semiconductor element metal connecting plate and part of the bonding material for bonding is, according to any one of claims 1 to 3, characterized in that the visually identifiable from the opening Semiconductor device. 前記接合材の一部を前記開口部に収納させることを特徴とする請求項４に記載の半導体装置。 The semiconductor device according to claim 4, wherein a part of the bonding material is stored in the opening. 前記接合材は、半田または導電性ペーストであることを特徴とする請求項１から請求項５の何れかに記載の半導体装置。 The semiconductor device according to claim 1, wherein the bonding material is solder or a conductive paste. アイランドの上面に固着された半導体素子および前記アイランドに接近する一端が幅広な接続部であるリードを用意する第１工程と、
前記半導体素子の上面に設けられた電極に金属接続板の第１接続部を接続し、前記リードの前記接続部の上面に接合材を介して前記金属接続板の第２接続部を接続し、前記半導体素子と前記リードとを電気的に接続する第２工程と、を具備し、
前記第２工程では、前記金属接続板の前記第２接続部を部分的に窪ませた凹部から、前記リードの前記接続部に塗布された前記接合材の一部を露出させることを特徴とする半導体装置の製造方法。 A first step of preparing a semiconductor element fixed to the upper surface of the island and a lead having a wide connection portion at one end approaching the island;
Connecting a first connection portion of a metal connection plate to an electrode provided on the upper surface of the semiconductor element, connecting a second connection portion of the metal connection plate to the upper surface of the connection portion of the lead via a bonding material; A second step of electrically connecting the semiconductor element and the lead,
In the second step, a part of the bonding material applied to the connection portion of the lead is exposed from a concave portion in which the second connection portion of the metal connection plate is partially recessed. A method for manufacturing a semiconductor device. 前記凹部に露出した前記接合材の有無を確認することにより、前記リードの前記第２接続部と前記リードとの接続の良否を判定することを特徴とする請求項７に記載の半導体装置の製造方法。 The semiconductor device manufacturing method according to claim 7 , wherein whether or not the bonding material exposed in the recess is present is determined to determine whether the second connecting portion of the lead is connected to the lead. Method. 前記接合材の一部を前記凹部に収納させることを特徴とする請求項７または請求項８に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 7 , wherein a part of the bonding material is stored in the recess. 前記金属接続板を部分的に開口させた開口部を設け、
前記半導体素子の前記電極と前記金属接続板とを接合させる接合材の一部が、前記開口部から視覚的に確認可能であることを特徴とする請求項７から請求項９の何れかに記載の半導体装置の製造方法。 Providing an opening partly opening the metal connection plate;
Wherein said electrode of the semiconductor element metal connecting plate and part of the bonding material for bonding is, according to any of claims 7 to 9, characterized in that the visually identifiable from the opening Semiconductor device manufacturing method. 前記開口部に露出した前記接合材の有無を確認することにより、前記リードの前記第１接続部と前記半導体素子との接続の良否を判定することを特徴とする請求項１０に記載の半導体装置の製造方法。 11. The semiconductor device according to claim 10 , wherein whether or not the bonding material exposed in the opening is present is determined to determine whether the first connection portion of the lead is connected to the semiconductor element. Manufacturing method. 前記第２工程の後に、前記金属接続板の位置を確認する第３工程を具備し、
前記第３工程では、前記金属接続板の上面に設けた認識マークの位置を視覚的に確認することを特徴とする請求項７から請求項１１の何れかに記載の半導体装置の製造方法。
After the second step, comprising a third step of confirming the position of the metal connection plate,
12. The method of manufacturing a semiconductor device according to claim 7, wherein in the third step, the position of a recognition mark provided on the upper surface of the metal connection plate is visually confirmed.
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