JP5153682B2 - Semiconductor element storage package and optical semiconductor device - Google Patents

Semiconductor element storage package and optical semiconductor device Download PDF

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JP5153682B2
JP5153682B2 JP2009042840A JP2009042840A JP5153682B2 JP 5153682 B2 JP5153682 B2 JP 5153682B2 JP 2009042840 A JP2009042840 A JP 2009042840A JP 2009042840 A JP2009042840 A JP 2009042840A JP 5153682 B2 JP5153682 B2 JP 5153682B2
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holding member
package
semiconductor element
optical semiconductor
semiconductor device
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JP2010171356A (en
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猛夫 佐竹
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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Description

本発明は半導体素子収納用パッケージおよび光半導体装置に関する。   The present invention relates to a semiconductor element storage package and an optical semiconductor device.

従来の同軸コネクタを具備した高周波信号を伝送するための半導体素子収納用パッケージ（以下、パッケージとも言う）の概略図を図５に示す。図５（ａ）は従来のパッケージの一例を示す平面図であり、図５（ｂ）は図５（ａ）に示すパッケージのＡ−Ａ’線における断面図である。１０１は基体、１０２は枠体、１０３は同軸コネクタ、１０６は回路基板、１１１は保持部材、１１２は窓部材であり、主にこれらによりパッケージが構成される。   FIG. 5 shows a schematic diagram of a package for housing a semiconductor element (hereinafter also referred to as a package) for transmitting a high-frequency signal having a conventional coaxial connector. FIG. 5A is a plan view showing an example of a conventional package, and FIG. 5B is a cross-sectional view taken along line A-A ′ of the package shown in FIG. Reference numeral 101 denotes a base body, 102 denotes a frame body, 103 denotes a coaxial connector, 106 denotes a circuit board, 111 denotes a holding member, and 112 denotes a window member.

図５のパッケージは、パッケ−ジ内外を電気的に接続するための中心導体１０３ｂを有する同軸コネクタ１０３と、同軸コネクタ１０３の中心導体１０３ｂと電気的に接続される線路導体１０６ａを有する回路基板１０６と、同軸コネクタ１０３が嵌合される貫通孔１１１ｂと回路基板１０６が設置される台座部１１１ａとが一体的に形成された保持部材１１１とを備えているものである。また、パッケージ内の光半導体素子（図示せず）に光信号を入出力させるため、枠体１０２の一側面にパッケージの外側から光ファイバ等が接続される金属製の筒状からなる窓部材１１２が挿通接合されている。   The package of FIG. 5 includes a coaxial connector 103 having a central conductor 103b for electrically connecting the inside and outside of the package, and a circuit board 106 having a line conductor 106a electrically connected to the central conductor 103b of the coaxial connector 103. And a holding member 111 in which a through hole 111b into which the coaxial connector 103 is fitted and a pedestal portion 111a on which the circuit board 106 is installed are integrally formed. In addition, in order to input / output optical signals to / from an optical semiconductor element (not shown) in the package, a window member 112 made of a metal cylinder in which an optical fiber or the like is connected to one side surface of the frame 102 from the outside of the package. Are inserted and joined.

ここで、保持部材１１１はセラミック材料等から構成されて成り、基体１０１の貫通孔１０１ｂが外部回路基板への固定部となるものである（例えば、特許文献１参照）。   Here, the holding member 111 is made of a ceramic material or the like, and the through hole 101b of the base 101 serves as a fixing portion to the external circuit board (for example, see Patent Document 1).

特開２００２−２４３９９２号公報Japanese Patent Application Laid-Open No. 2002-243992

しかしながら、図５に示した上記従来のパッケージにおいて、パッケージ内に光半導体素子を実装する際、光半導体素子を光半導体素子搭載用の台座（図示せず）を介して搭載する必要があった。この台座はパッケージとは別に形成されたブロック状のものであり、限られたスペースのパッケージ内で台座を光半導体素子と光ファイバとを光結合させるように位置合わせを正確に行なうことが困難であった。   However, in the conventional package shown in FIG. 5, when an optical semiconductor element is mounted in the package, it is necessary to mount the optical semiconductor element via a base (not shown) for mounting the optical semiconductor element. This pedestal is in the form of a block formed separately from the package, and it is difficult to accurately align the pedestal so that the optical semiconductor element and the optical fiber are optically coupled within the package in a limited space. there were.

また、台座は基体１０１の上面に設置されるため、貫通孔１０１ｂをネジ等によって固定した際に、基体１０１が変形し、光半導体素子の位置がズレ易く、光半導体素子と光ファイバとを光結合させることが困難であった。   Further, since the pedestal is installed on the upper surface of the base body 101, when the through hole 101b is fixed with a screw or the like, the base body 101 is deformed and the position of the optical semiconductor element is easily shifted, so that the optical semiconductor element and the optical fiber are optically connected. It was difficult to combine.

本発明は、上記問題点に鑑み完成されたものであり、その目的は、光半導体素子と光ファイバとを光結合させることが容易なパッケージおよび光半導体装置を提供することにある。   The present invention has been completed in view of the above problems, and an object of the present invention is to provide a package and an optical semiconductor device in which an optical semiconductor element and an optical fiber can be easily optically coupled.

上記の課題を解決するために、本発明の一実施形態に係る半導体素子収納用パッケージは、光半導体素子が収納されるキャビティを有する基体の壁部に前記キャビティに通じる複数の開口部を有する容器体と、第１の前記開口部に設けられ、前記光半導体素子に光信号を入出力するための窓部材と、第２の前記開口部に設けられ、該第２の開口部に挿入されるコネクタを保持するための保持部材と、を具備し、前記保持部材は、前記光半導体素子を搭載するための台座部が一体形成されてなるとともに、その下面と前記キャビティの底面との間に空隙を介して設けられていることを特徴とするパッケージである。   In order to solve the above problems, a package for housing a semiconductor device according to an embodiment of the present invention includes a container having a plurality of openings that communicate with the cavity on a wall of a base body having a cavity in which an optical semiconductor device is housed. A body, a window member for inputting / outputting an optical signal to / from the optical semiconductor element, a second member provided in the second opening, and inserted into the second opening. A holding member for holding the connector, wherein the holding member is integrally formed with a pedestal for mounting the optical semiconductor element, and a gap is formed between the lower surface of the holding member and the bottom surface of the cavity. It is a package characterized by being provided via.

また、本発明の一実施形態に係る半導体素子収納用パッケージは、前記保持部材が、の前記台座部から前記壁部にかけて漸次厚くなるように形成されていることが好ましい。   In the semiconductor element storage package according to the embodiment of the present invention, it is preferable that the holding member is formed so as to gradually increase in thickness from the base portion to the wall portion.

また、本発明の一実施形態に係る半導体素子収納用パッケージは、前記保持部材は、金属からなることが好ましい。   In the package for housing a semiconductor element according to an embodiment of the present invention, the holding member is preferably made of metal.

また、本発明の一実施形態に係る半導体素子収納用パッケージは、前記保持部材は、鉄−ニッケル−コバルト合金からなることが好ましい。   In the package for housing a semiconductor element according to an embodiment of the present invention, the holding member is preferably made of an iron-nickel-cobalt alloy.

また、本発明の一実施形態に係る半導体素子収納用パッケージは、前記保持部材の上面に取着され、前記コネクタおよび前記光半導体素子と電気的に接続するための回路基板をさらに有することが好ましい。   The semiconductor element storage package according to an embodiment of the present invention preferably further includes a circuit board attached to the upper surface of the holding member and electrically connected to the connector and the optical semiconductor element. .

また、本発明の一実施形態に係る半導体素子収納用パッケージは、前記保持部材に複数個の前記コネクタが取り付けられていることが好ましい。   In the semiconductor element storage package according to the embodiment of the present invention, it is preferable that a plurality of the connectors are attached to the holding member.

また、本発明の一実施形態に係る半導体素子収納用パッケージは、前記保持部材の上面が前記回路基板の下面より幅狭とされていることが好ましい。   In the package for housing a semiconductor device according to the embodiment of the present invention, it is preferable that the upper surface of the holding member is narrower than the lower surface of the circuit board.

また、本発明の一実施形態に係る半導体素子収納用パッケージは、前記保持部材は、前記壁部との接合部に鍔部が設けられ、該鍔部が前記壁部の第２の前記開口部周囲に接合され、取り付けられていることが好ましい。   In the package for housing a semiconductor element according to one embodiment of the present invention, the holding member is provided with a flange at a joint portion with the wall, and the flange is the second opening of the wall. It is preferable that it is joined and attached to the periphery.

また、本発明の一実施形態に係る光半導体装置は、上記半導体素子収納用パッケージと、前記台座部上に設けられた光半導体素子と、前記容器体に取着され、前記パッケージを気密封止する封止部材と、を具備した光半導体装置である。   An optical semiconductor device according to an embodiment of the present invention includes a package for housing the semiconductor element, an optical semiconductor element provided on the pedestal, and the container, and the package is hermetically sealed. An optical semiconductor device comprising:

本発明の一実施形態に係る半導体素子収納用パッケージの構成によれば、別途、光半導体素子を搭載するための台座を設けなくともよく、台座の位置合わせが不要となるとともに、光半導体素子が搭載される保持部材および窓部材が壁部に設けられ、さらに保持部材の下面とキャビティの底面との間に空隙が設けられていることにより、キャビティの底面が変形しても光半導体素子が位置ズレし難くなり、光半導体素子と光ファイバとを光結合させることが容易となる。   According to the configuration of the semiconductor element storage package according to the embodiment of the present invention, it is not necessary to separately provide a pedestal for mounting the optical semiconductor element, and the alignment of the pedestal is not necessary. The holding member and the window member to be mounted are provided on the wall portion, and the gap is provided between the lower surface of the holding member and the bottom surface of the cavity, so that the optical semiconductor element can be positioned even if the bottom surface of the cavity is deformed. It becomes difficult to shift, and it becomes easy to optically couple the optical semiconductor element and the optical fiber.

（ａ）は本発明のパッケージおよび光半導体装置の実施の形態の一例を示す平面図であり、（ｂ）は（ａ）に示すパッケージおよび光半導体装置のＸ−Ｘ’線における断面図である。(A) is a top view which shows an example of embodiment of the package of this invention, and an optical semiconductor device, (b) is sectional drawing in the XX 'line | wire of the package and optical semiconductor device which are shown to (a). . 本発明のパッケージおよび光半導体装置の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the package of this invention, and an optical semiconductor device. （ａ）は本発明のパッケージおよび光半導体装置の実施の形態の他の例を示す平面図であり、（ｂ）は（ａ）に示すパッケージおよび光半導体装置のＹ−Ｙ’線における断面図である。(A) is a top view which shows the other example of embodiment of the package of this invention, and an optical semiconductor device, (b) is sectional drawing in the YY 'line of the package and optical semiconductor device which are shown to (a) It is. 本発明のパッケージおよび光半導体装置の実施の形態のさらに他の例を示す要部拡大正面図である。It is a principal part enlarged front view which shows the further another example of embodiment of the package of this invention, and an optical semiconductor device. （ａ）は従来のパッケージおよび光半導体装置の例を示す平面図であり、（ｂ）は（ａ）に示すパッケージおよび光半導体装置のＡ−Ａ’線における断面図である。(A) is a top view which shows the example of the conventional package and an optical semiconductor device, (b) is sectional drawing in the A-A 'line of the package and optical semiconductor device which are shown to (a).

以下、本発明のパッケージの実施形態の各構成例を説明する。図１（ａ）は本発明のパッケージの実施の形態の一例を示す平面図であり、図１（ｂ）は図１（ａ）に示すパッケージのＸ−Ｘ’線における断面図である。   Hereinafter, each structural example of embodiment of the package of this invention is demonstrated. FIG. 1A is a plan view showing an example of an embodiment of the package of the present invention, and FIG. 1B is a cross-sectional view taken along line X-X ′ of the package shown in FIG.

図２は本発明のパッケージおよび光半導体装置の実施の形態の他の例を示す断面図である。図３は本発明のパッケージの実施の形態の他の例を示す平面図であり、図３（ｂ）は図３（ａ）に示すパッケージのＹ−Ｙ’線における断面図である。また、図４は本発明のパッケージおよび光半導体装置の実施の形態のさらに他の例を示す要部拡大正面図である。ここで、１は基体（容器体）、２は壁部、３はコネクタ、１１は基板保持部材、１１ｂは台座部、１２は窓部材である。   FIG. 2 is a sectional view showing another example of the package and the optical semiconductor device according to the present invention. FIG. 3 is a plan view showing another example of the embodiment of the package of the present invention, and FIG. 3B is a cross-sectional view taken along the line Y-Y 'of the package shown in FIG. FIG. 4 is an enlarged front view of a main part showing still another example of the package and the optical semiconductor device according to the present invention. Here, 1 is a base body (container body), 2 is a wall portion, 3 is a connector, 11 is a substrate holding member, 11b is a pedestal portion, and 12 is a window member.

基体１は底板部１ａと壁部２とからなる。底板部１ａは鉄（Ｆｅ）−ニッケル（Ｎｉ）−コバルト（Ｃｏ）合金や銅（Ｃｕ）−タングステン（Ｗ）の焼結材等の金属や、セラミックス，ガラス，樹脂等からなる。底板部１ａが金属からなる場合は、そのインゴットに圧延加工や打ち抜き加工等の従来周知の金属加工法を施すか、または射出成形と切削加工を施すことによって所定の形状に製作される。また、底板部１ａがセラミックスからなる場合は、従来周知のセラミックグリーンシート積層法を用いることができる。樹脂の場合も、従来周知の成型方法で形成することができる。   The base body 1 includes a bottom plate portion 1 a and a wall portion 2. The bottom plate 1a is made of a metal such as a sintered material of iron (Fe) -nickel (Ni) -cobalt (Co) alloy or copper (Cu) -tungsten (W), ceramics, glass, resin, or the like. When the bottom plate portion 1a is made of metal, the ingot is manufactured in a predetermined shape by performing a conventionally known metal processing method such as rolling or punching, or by performing injection molding and cutting. When the bottom plate 1a is made of ceramics, a conventionally known ceramic green sheet lamination method can be used. Also in the case of resin, it can be formed by a conventionally known molding method.

底板部１ａは、その上側主面の外周部に壁部２が立設されている。この壁部２と底板部１ａとでキャビティ１ｃを形成することができる。   As for the baseplate part 1a, the wall part 2 is standingly arranged by the outer peripheral part of the upper side main surface. A cavity 1c can be formed by the wall portion 2 and the bottom plate portion 1a.

壁部２の材質は、底板部１ａと同様に、鉄−ニッケル−コバルト合金や銅−タングステンの焼結材等の金属、セラミックス，ガラス，樹脂等からなる。壁部２と底板部１ａとは、一体成形してもよい。あるいは、壁部２と底板部１ａとが別部材からなり、底板部１ａに銀（Ａｇ）−銅（Ｃｕ）ロウ、銀（Ａｇ）ロウ等のロウ材や樹脂等からなる接着剤を介して接合して一体のものとしてもよい。   The material of the wall 2 is made of a metal such as an iron-nickel-cobalt alloy or copper-tungsten sintered material, ceramics, glass, resin, etc., like the bottom plate 1a. The wall 2 and the bottom plate 1a may be integrally formed. Alternatively, the wall portion 2 and the bottom plate portion 1a are made of different members, and an adhesive made of a brazing material such as silver (Ag) -copper (Cu) brazing or silver (Ag) brazing or a resin is used for the bottom plate portion 1a. It is good also as a one-piece thing by joining.

壁部２の側面には、複数の開口部が形成されている。矩形状の壁部２の場合、第１の壁部２には、光半導体素子５に光信号を入出力するための窓部材１２が接合される第１の開口部２ａが設けられている。また、第２の壁部２には、後述する保持部材１１が接合される第２の開口部２ｂが形成されている。   A plurality of openings are formed on the side surface of the wall 2. In the case of the rectangular wall 2, the first wall 2 is provided with a first opening 2 a to which a window member 12 for inputting / outputting an optical signal to / from the optical semiconductor element 5 is joined. The second wall 2 is formed with a second opening 2b to which a holding member 11 described later is joined.

窓部材１２は、光半導体素子５に光信号を入出力するための貫通孔を有する筒状の部材であり、貫通孔のパッケージ外側から光ファイバを挿入して光ファイバを固定するためのものである。窓部材１２の材質は、例えば、鉄−ニッケル−コバルト合金，鉄−ニッケル合金，ステンレス鋼（ＳＵＳ），セラミックス，ガラス，樹脂等からなる。   The window member 12 is a cylindrical member having a through hole for inputting / outputting an optical signal to / from the optical semiconductor element 5, and is used for fixing the optical fiber by inserting the optical fiber from the outside of the package of the through hole. is there. The material of the window member 12 is made of, for example, iron-nickel-cobalt alloy, iron-nickel alloy, stainless steel (SUS), ceramics, glass, resin, or the like.

第１の開口部２ａと第２の開口部２ｂの形状は、壁部２内外を貫通する貫通孔、壁部２の基体１との接合面側から逆Ｕ字型に切り欠かれ壁部２内外を貫通する切り欠き、または壁部２の蓋体４との接合面側からＵ字型に切り欠かれて壁部２内外を貫通する切り欠きであってもよい。   The shapes of the first opening 2a and the second opening 2b are cut out in an inverted U shape from the side of the through-hole penetrating the inside and outside of the wall 2 and the surface of the wall 2 where the base 1 is joined, and the wall 2 It may be a notch penetrating the inside or the outside, or a notch penetrating the inside and outside of the wall part 2 by being cut out in a U shape from the side of the joint surface of the wall part 2 with the lid 4.

例えば、第１の開口部２ａと第２の開口部２ｂのうち、少なくとも一方が壁部２の蓋体４との接合面側からＵ字型に切り欠かれて壁部２内外を貫通する切り欠きとして形成される場合、第１の開口部２ａ，第２の開口部２ｂが設けられる壁部２１と、蓋体４を気密に封止するためのシールリング２２とから形成されることが好ましい。壁部２１およびシールリング２２の材質は、鉄−ニッケル−コバルト合金や銅−タングステンの焼結材等の金属、セラミックス，ガラス，または樹脂等からなる。また、壁部２１とシールリング２２とは、同一の材料でもよいし、異なる材料でもよい。   For example, at least one of the first opening 2a and the second opening 2b is cut into a U-shape from the joint surface side of the wall 2 with the lid 4 and penetrates the inside and outside of the wall 2. When formed as a notch, it is preferably formed from a wall portion 21 provided with the first opening 2a and the second opening 2b and a seal ring 22 for hermetically sealing the lid 4. . The material of the wall 21 and the seal ring 22 is made of metal such as iron-nickel-cobalt alloy or copper-tungsten sintered material, ceramics, glass, or resin. The wall 21 and the seal ring 22 may be made of the same material or different materials.

シールリング２２は、蓋体４とのシーム溶接性に優れた鉄−ニッケル−コバルト合金，鉄−ニッケル合金，ステンレス鋼等からなるのがよい。壁部２１とシールリング２２は、第１の開口部２ａ内に鉄−ニッケル−コバルト合金等の金属からなる筒状の窓部材１２が挿入されるとともに窓部材１２の外周面と第１の開口部２ａの内周面とが銀−銅ロウ、銀ロウ等のロウ材を介して嵌着接合される際、または第２の開口部２ｂ内に鉄−ニッケル−コバルト合金等の金属からなる保持部材１１が挿入されるとともに保持部材１１の外周面と第２の開口部２ｂの内周面とが銀−銅ロウ、銀ロウ等のロウ材を介して嵌着接合される際に、銀−銅ロウ、銀ロウ等のロウ材を介してロウ付けされる。   The seal ring 22 is preferably made of an iron-nickel-cobalt alloy, iron-nickel alloy, stainless steel, or the like excellent in seam weldability with the lid 4. The wall portion 21 and the seal ring 22 have a cylindrical window member 12 made of a metal such as iron-nickel-cobalt alloy inserted into the first opening 2a, and the outer peripheral surface of the window member 12 and the first opening. When the inner peripheral surface of the portion 2a is fitted and joined via a brazing material such as silver-copper brazing or silver brazing, or the second opening 2b is made of a metal such as iron-nickel-cobalt alloy. When the member 11 is inserted and the outer peripheral surface of the holding member 11 and the inner peripheral surface of the second opening 2b are fitted and joined via a brazing material such as silver-copper brazing or silver brazing, silver- It is brazed via a brazing material such as copper brazing or silver brazing.

コネクタ３は、内部に収容する光半導体素子５を外部に電気的に接続するものである。例えば、コネクタ３が同軸コネクタである場合、鉄−ニッケル−コバルト合金等の金属からなる円筒状の外周導体３ａの中心軸に同じく鉄−ニッケル−コバルト合金等の金属からなる中心導体３ｂが絶縁体３ｃを介して固定された構造をしている。
＜保持部材＞
以下、保持部材１１について詳細に説明する。 The connector 3 is for electrically connecting the optical semiconductor element 5 accommodated therein to the outside. For example, when the connector 3 is a coaxial connector, a central conductor 3b made of a metal such as iron-nickel-cobalt alloy is also an insulator on the central axis of a cylindrical outer conductor 3a made of a metal such as iron-nickel-cobalt alloy. It has a structure fixed via 3c.
<Holding member>
Hereinafter, the holding member 11 will be described in detail.

保持部材１１は、基体１の第２の開口部２ｂに設けられ、開口部２ｂに挿入されるコネクタを保持するためのものであり、光半導体素子５を搭載するための台座部１１ｂが一体形成されてなることを特徴とするものである。   The holding member 11 is provided in the second opening 2b of the base body 1 and holds a connector inserted into the opening 2b. A pedestal 11b for mounting the optical semiconductor element 5 is integrally formed. It is characterized by being made.

ここで、保持部材１１の台座部１１ｂは、図１（ｂ），図３（ｂ）に示すように、光半導体素子５を搭載した際に、光半導体素子５と窓部材１２とが光学的に結合する位置となるように台座部１１ｂが形成されている。光半導体素子５と窓部材１２に設置される光ファイバとを光学的に結合させるために、図１（ａ）のように第１の開口部２ａと第２の開口部２ｂとは平面視において壁部２の隣接する辺に配置されてもよいし、図３（ａ）のようにそれぞれ対向する辺に配置されてもよい。これらのように、窓部材１２と光半導体素子５とは対向させて互いに見通せるような位置に設置される。また、光を反射させる反射体や屈折体を介した光路上に光半導体素子５が設置されてもよい。   Here, as shown in FIGS. 1B and 3B, the pedestal portion 11b of the holding member 11 is optically connected between the optical semiconductor element 5 and the window member 12 when the optical semiconductor element 5 is mounted. A pedestal portion 11b is formed so as to be a position to be coupled to the pedestal. In order to optically couple the optical semiconductor element 5 and the optical fiber installed in the window member 12, the first opening 2a and the second opening 2b are in plan view as shown in FIG. You may arrange | position to the edge | side which the wall part 2 adjoins, and may arrange | position to the edge | side which each opposes like Fig.3 (a). As described above, the window member 12 and the optical semiconductor element 5 are disposed at positions that face each other so as to face each other. Further, the optical semiconductor element 5 may be installed on an optical path through a reflector or refractor that reflects light.

保持部材１１に光半導体素子５を搭載するための台座部１１ｂが一体形成されることで、台座を保持部材１１とは別に形成しなくともよくなり、台座を底板部１ａに設置する際の位置合わせが不要となる。また、台座を別途形成する場合と比較して、台座と保持部材１１との間隙を形成しなくともよいため、パッケージの小型化に繋がる。それゆえ、コネクタ３から光半導体素子５までの距離を短くでき、伝送損失の発生を抑制できる。   Since the pedestal portion 11b for mounting the optical semiconductor element 5 on the holding member 11 is integrally formed, it is not necessary to form the pedestal separately from the holding member 11, and the position when the pedestal is installed on the bottom plate portion 1a. Matching becomes unnecessary. Further, as compared with the case where the pedestal is separately formed, it is not necessary to form a gap between the pedestal and the holding member 11, which leads to a reduction in the size of the package. Therefore, the distance from the connector 3 to the optical semiconductor element 5 can be shortened, and transmission loss can be suppressed.

なお、保持部材１１の下面と底板部１ａとの間に空間がある状態（保持部材１１の下面が容器体１のキャビティ１ｃの中空に位置する状態）では、保持部材１１が底板部１ａの反りの影響を受け難くすることができる。   In the state where there is a space between the lower surface of the holding member 11 and the bottom plate portion 1a (the lower surface of the holding member 11 is positioned in the cavity 1c of the container body 1), the holding member 11 warps the bottom plate portion 1a. Can be made less susceptible to

また、台座部の上面の高さは、第１の開口部２ａとほぼ同じ高さになるように形成する。具体的には、ＭＩＭ（Metal injection molding）により、容器体１と保持部材１１と
を一体成型することが好ましく、切削加工により、保持部材１１を形成するよりも、容器体１と保持部材１１との寸法誤差を小さくできる。また、保持部材１１の下面または容器体１の底面に鏡面加工を施せば、台座部の高さの寸法誤差を小さくできる。 Further, the height of the upper surface of the pedestal is formed so as to be substantially the same as that of the first opening 2a. Specifically, it is preferable to integrally mold the container body 1 and the holding member 11 by MIM (Metal injection molding), and rather than forming the holding member 11 by cutting, the container body 1 and the holding member 11 Dimensional error can be reduced. Further, if mirror processing is performed on the lower surface of the holding member 11 or the bottom surface of the container body 1, the dimensional error in the height of the pedestal portion can be reduced.

一般的に、光軸のずれにより、光半導体素子５の結合度が変化し易いパッケージにおいて、光半導体素子５を所定の高さ位置で保持することは極めて重要である。   In general, it is extremely important to hold the optical semiconductor element 5 at a predetermined height position in a package in which the degree of coupling of the optical semiconductor element 5 is likely to change due to the deviation of the optical axis.

本発明に係る保持部材１１は、例えば、鉄−ニッケル−コバルト合金や銅−タングステンの焼結材等の金属や、セラミックス，ガラス，樹脂等から成り、金属からなる場合、そのインゴットに圧延加工や打ち抜き加工等の従来周知の金属加工法を施すか、または射出成形と切削加工を施すことによって、所定形状に形成することができる。   The holding member 11 according to the present invention is made of, for example, a metal such as a sintered material of iron-nickel-cobalt alloy or copper-tungsten, ceramics, glass, resin, and the like. It can be formed into a predetermined shape by applying a conventionally known metal processing method such as punching, or by performing injection molding and cutting.

保持部材１１には、キャビティ１ｃ内外を導通するコネクタ挿通用の貫通孔１１ａが設けられ、このコネクタ挿通用の貫通孔１１ａにコネクタを挿通固定させることにより、パッケージ内外を電気的に導通させ、光半導体素子５と外部電気回路とを電気的に接続するための線路が形成される。   The holding member 11 is provided with a through hole 11a for inserting a connector that conducts the inside and outside of the cavity 1c. By inserting and fixing the connector into the through hole 11a for inserting the connector, the inside and outside of the package are electrically connected to each other. A line for electrically connecting the semiconductor element 5 and the external electric circuit is formed.

好ましくは、コネクタ３は同軸コネクタ３であるのがよい。この場合、電気信号を同軸線路のモードで伝送させることができ、高周波信号を所定のインピーダンス値に整合させ易くして、インピーダンス値のずれによる伝送損失の発生を抑制することができる。   Preferably, the connector 3 is a coaxial connector 3. In this case, the electric signal can be transmitted in the coaxial line mode, the high-frequency signal can be easily matched with a predetermined impedance value, and the occurrence of transmission loss due to the deviation of the impedance value can be suppressed.

また、同軸コネクタ３とすることによって、パッケージ外部に同軸ケーブルを接続することが容易となり、同軸ケーブルによって高周波信号を所定のインピーダンス値に整合させた状態で入出力させることができる。この結果、高周波信号に発生する伝送損失を抑制させ、高周波信号を効率良く入出力させることができる。   Further, by using the coaxial connector 3, it is easy to connect a coaxial cable to the outside of the package, and a high frequency signal can be input / output in a state in which the coaxial cable is matched with a predetermined impedance value. As a result, transmission loss generated in the high frequency signal can be suppressed, and the high frequency signal can be input / output efficiently.

同軸ケーブルの接続を容易にするため、パッケージ外側面には、同軸ケーブル接続部１１ｄを形成しておくのがよい。   In order to facilitate the connection of the coaxial cable, a coaxial cable connection portion 11d is preferably formed on the outer surface of the package.

同軸コネクタ３は、鉄−ニッケル−コバルト合金等の金属からなる円筒状の外周導体３ａの中心軸に同じく鉄−ニッケル−コバルト合金等の金属からなる中心導体３ｂがガラス等の絶縁体３ｃを介して固定された構造のものであり、中心導体３ｂが電気信号の伝送線路として機能し、外周導体３ａが接地導体として機能する。   In the coaxial connector 3, a central conductor 3b made of a metal such as iron-nickel-cobalt alloy is disposed on a central axis of a cylindrical outer conductor 3a made of a metal such as iron-nickel-cobalt alloy via an insulator 3c such as glass. The central conductor 3b functions as an electric signal transmission line, and the outer conductor 3a functions as a ground conductor.

好ましくは、保持部材１１は金属からなるのがよい。この構成により、例え光半導体素子５が発熱した場合であっても、金属は熱伝導性に優れることから、熱伝導によってパッケージ外部に熱放散させやすくなる。また、保持部材１１が金属からなることによって、コネクタ３の接地電位を強化することができ、コネクタ３を伝送する電気信号が高周波のものであっても、所定のインピーダンス値に整合させて伝送損失の発生を抑制することができ、効率良く伝送させることができる。保持部材１１が金属からなる場合、同軸コネクタ３は外周導体３ａの外周面がコネクタ挿通用の貫通孔１１ａの内面と金（Ａｕ）−錫（Ｓｎ）半田等の封着材を用いて気密に接合することができる。   Preferably, the holding member 11 is made of metal. With this configuration, even when the optical semiconductor element 5 generates heat, the metal is excellent in thermal conductivity, so that heat is easily dissipated outside the package by thermal conduction. Further, since the holding member 11 is made of metal, the ground potential of the connector 3 can be strengthened, and even if the electrical signal transmitted through the connector 3 is of a high frequency, the transmission loss is adjusted to a predetermined impedance value. Can be suppressed and can be transmitted efficiently. When the holding member 11 is made of metal, the coaxial connector 3 is hermetically sealed with the outer peripheral surface of the outer conductor 3a using an inner surface of the through hole 11a for inserting the connector and a sealing material such as gold (Au) -tin (Sn) solder. Can be joined.

さらに好ましくは、保持部材１１は鉄−ニッケル−コバルト合金からなるのがよい。この構成により、コネクタ３が上述のような同軸コネクタ３からなる場合、コネクタ３との熱膨張係数が近似したものとなり、コネクタ３をロウ付け接合した際にコネクタ３が保持部材との熱膨張差による応力によって破損するのを防止することができる。また、光半導体素子５から発生した熱をパッケージ外部に良好に熱放散させることができる。   More preferably, the holding member 11 is made of an iron-nickel-cobalt alloy. With this configuration, when the connector 3 is composed of the coaxial connector 3 as described above, the thermal expansion coefficient with the connector 3 is approximate, and when the connector 3 is brazed and joined, the connector 3 has a difference in thermal expansion with the holding member. It is possible to prevent breakage due to the stress caused by. Moreover, the heat generated from the optical semiconductor element 5 can be favorably dissipated outside the package.

コネクタ３と光半導体素子５との接続方法の一例として、コネクタ３の線路導体と光半導体素子５の電極とをボンディングワイヤによって直接接続することが挙げられる。   One example of a method for connecting the connector 3 and the optical semiconductor element 5 is to directly connect the line conductor of the connector 3 and the electrode of the optical semiconductor element 5 with a bonding wire.

また、コネクタ３と光半導体素子５との接続方法の他の例として、保持部材１１の上面に取着され、コネクタ３と電気的に接続するための回路基板をさらに設けることが挙げられる。この構成により、光半導体素子５の電極をボンディングワイヤによって回路基板の配線に接続させることができ、コネクタ３と光半導体素子５の電極の接続を容易なものとすることができる。また、中心導体３ｂが外周導体３ａより外側に突出した箇所を回路基板の配線に接続させることで、中心導体３ｂを伝送する電気信号のインピーダンス値を回路基板の配線を伝送する電気信号のインピーダンス値と同様とすることができる。即ち、回路基板の配線を所定のインピーダンス値となるようにしておけば、中心導体３ｂが外周導体３ａより外側に突出した箇所においても所定のインピーダンス値に整合させ、高周波信号に伝送損失が発生するのを抑制させ、高周波信号を効率よく伝送させることができる。   Another example of the method of connecting the connector 3 and the optical semiconductor element 5 is to further provide a circuit board that is attached to the upper surface of the holding member 11 and electrically connected to the connector 3. With this configuration, the electrode of the optical semiconductor element 5 can be connected to the wiring of the circuit board by the bonding wire, and the connection between the connector 3 and the electrode of the optical semiconductor element 5 can be facilitated. Further, by connecting the portion where the center conductor 3b protrudes outside the outer conductor 3a to the wiring of the circuit board, the impedance value of the electric signal transmitted through the center conductor 3b is changed to the impedance value of the electric signal transmitted through the wiring of the circuit board. And can be similar. That is, if the wiring of the circuit board is set to a predetermined impedance value, the center conductor 3b is matched to the predetermined impedance value even at a position where the central conductor 3b protrudes outside the outer conductor 3a, and transmission loss occurs in the high-frequency signal. Can be suppressed, and a high-frequency signal can be transmitted efficiently.

回路基板を設ける構成として、例えば図１乃至図３に、同軸コネクタ３の中心導体３ｂに接続するための線路導体６ａを備えた接続用基板６と、光半導体素子５が搭載されるとともに光半導体素子５と接続するための線路導体７ａを備えた搭載用基板７とを備える構成が挙げられる。この場合、回路基板は接続用基板６と搭載用基板７の２つとなる。この構成により、予め接続用基板６の線路導体６ａが中心導体３ｂに一致するように回路基板６を保持部材１１の棚部１１ｃに載置させておくことができるとともに、予め搭載用基板７に搭載された光半導体素子５が窓部材１２に取り付けられた光ファイバとの光結合効率が最大となるように位置合わせした状態で載置することができる。その結果、中心導体３ｂと線路導体６ａとの接続位置を所定の位置として、高周波信号を効率よく伝送できるようになるとともに、光半導体素子５と光ファイバとの光結合効率を最大として光信号を効率よく伝送させることができるようになる。   As a configuration in which a circuit board is provided, for example, in FIGS. 1 to 3, a connection board 6 provided with a line conductor 6 a for connecting to the center conductor 3 b of the coaxial connector 3, an optical semiconductor element 5 and an optical semiconductor are mounted. The structure provided with the board | substrate 7 for mounting provided with the line conductor 7a for connecting with the element 5 is mentioned. In this case, there are two circuit boards, the connection board 6 and the mounting board 7. With this configuration, the circuit board 6 can be placed on the shelf 11c of the holding member 11 in advance so that the line conductor 6a of the connection board 6 coincides with the center conductor 3b. The mounted optical semiconductor element 5 can be mounted in an aligned state so that the optical coupling efficiency with the optical fiber attached to the window member 12 is maximized. As a result, the high-frequency signal can be efficiently transmitted with the connection position between the center conductor 3b and the line conductor 6a being a predetermined position, and the optical signal is maximized with the optical coupling efficiency between the optical semiconductor element 5 and the optical fiber. It becomes possible to transmit efficiently.

また、図１乃至図３に示すように、保持部材１１の下面はキャビティ１ｃの中空に位置する。すなわち、保持部材１１の下面と底板部１ａとの間に空隙を介して保持部材１１が設けられることによって、台座部１１ｂおよび棚部１１ｃの下面と底板部１ａとの間に空間がある。この構成により、保持部材１１が底板部１ａに非接触の状態となるため、保持部材１１が底板部１ａより伝わってくる変形や外力を受け難くなり、底板部１ａが外部電気回路基板等に固定される際に外力を受けた場合にも、光半導体素子５が窓部材１２に対し位置ズレするのを防止することができる。   Further, as shown in FIGS. 1 to 3, the lower surface of the holding member 11 is located in the cavity 1c. That is, since the holding member 11 is provided between the lower surface of the holding member 11 and the bottom plate portion 1a via a gap, there is a space between the lower surface of the base portion 11b and the shelf portion 11c and the bottom plate portion 1a. With this configuration, since the holding member 11 is not in contact with the bottom plate portion 1a, the holding member 11 is difficult to receive deformation and external force transmitted from the bottom plate portion 1a, and the bottom plate portion 1a is fixed to an external electric circuit board or the like. Even when an external force is applied at the time, the optical semiconductor element 5 can be prevented from being displaced with respect to the window member 12.

すなわち、パッケージを基板等に固定するとき等に底板部１ａに外力が加わった際、底板部１ａが変形しようとするが、壁部２はパッケージ内部を取り囲む枠状に形成されているために、この変形に抗する作用を及ぼし、壁部２における変形は小さくなる。そして、保持部材１１および窓部材１２は壁部２に固定されているので、保持部材１１の先端および窓部材１２間の位置ズレは小さいものとなる。   That is, when an external force is applied to the bottom plate portion 1a when fixing the package to a substrate or the like, the bottom plate portion 1a tries to deform, but the wall portion 2 is formed in a frame shape surrounding the inside of the package. This acts against the deformation, and the deformation in the wall portion 2 is reduced. And since the holding member 11 and the window member 12 are being fixed to the wall part 2, the position shift between the front-end | tip of the holding member 11 and the window member 12 becomes a small thing.

その結果、底板部１ａが外力によって変形しても、光半導体素子５と窓部材１２に取り付けられる光ファイバとの光結合効率が低下するのを抑制し、光信号の伝送効率を良好に維持することができる。   As a result, even if the bottom plate portion 1a is deformed by an external force, the optical coupling efficiency between the optical semiconductor element 5 and the optical fiber attached to the window member 12 is suppressed, and the transmission efficiency of the optical signal is maintained well. be able to.

また好ましくは、図２に示すように、保持部材１１は、先端の台座部１１ｂから壁部２との接合部にかけて漸次厚みが厚くなるように形成することが好ましい。すなわち、線路導体６の線路方向に平行な方向において、保持部材１１の上下方向の厚みが台座部１１ｂから壁部２との接合部にかけて漸次厚くしてある。なお、図２は、図１（ａ）のＸ−Ｘ’線における断面図に相当し、図１（ｂ）とは別な実施の形態の例を示す。   Further, preferably, as shown in FIG. 2, the holding member 11 is preferably formed such that the thickness gradually increases from the base portion 11 b at the tip to the joint portion with the wall portion 2. That is, in the direction parallel to the line direction of the line conductor 6, the thickness of the holding member 11 in the vertical direction is gradually increased from the base portion 11 b to the joint portion with the wall portion 2. FIG. 2 corresponds to a cross-sectional view taken along line X-X ′ of FIG. 1A and shows an example of an embodiment different from FIG.

この構成によれば、光半導体素子５から発生する熱を、保持部材１１の台座部１１から壁部２へ保持部材１１を介して効率よく放散させることができ。その結果、光半導体素子５の冷却に優れ、光半導体素子５の作動性が低下するのを防止することができる。   According to this configuration, the heat generated from the optical semiconductor element 5 can be efficiently dissipated from the base portion 11 of the holding member 11 to the wall portion 2 through the holding member 11. As a result, the optical semiconductor element 5 is excellent in cooling, and the operability of the optical semiconductor element 5 can be prevented from being lowered.

また、保持部材１１に取り付けられるコネクタ３の個数は、図１に示すように１個であってもよいし、図３に示すように２個であってもよい。また、図示しないが３個以上であってもよい。   Further, the number of connectors 3 attached to the holding member 11 may be one as shown in FIG. 1 or may be two as shown in FIG. Moreover, although not illustrated, three or more may be sufficient.

コネクタ３が複数個取り付けられる場合は、例えば図３に示すように、保持部材１１に貫通孔１１ａが複数設けられ、各貫通孔１１ａにそれぞれ同軸コネクタ３を取り付ける。この構成によって、パッケージの多端子化が可能となる。   When a plurality of connectors 3 are attached, for example, as shown in FIG. 3, a plurality of through holes 11a are provided in the holding member 11, and the coaxial connectors 3 are attached to the respective through holes 11a. With this configuration, the number of terminals of the package can be increased.

また、図３に示すように、保持部材１１に２個の同軸コネクタ３を設け、それぞれの同軸コネクタ３の中心導体３ｂに接続されるように接続用基板６に２本の線路導体６ａを設けることで、１組の差動線路を形成することができ、差動信号の入出力が可能となる。   Further, as shown in FIG. 3, two coaxial connectors 3 are provided on the holding member 11, and two line conductors 6 a are provided on the connection board 6 so as to be connected to the center conductor 3 b of each coaxial connector 3. Thus, a pair of differential lines can be formed, and differential signals can be input and output.

２本の線路導体６ａを１組の差動線路と為す場合、２本の線路導体６ａの長さを同一とするのがよい。２本の線路導体６ａの長さを同一とすることによって、２本の線路導体６ａを伝送する電気信号に位相差が生ずるのを防止することができる。   When the two line conductors 6a are used as a set of differential lines, the lengths of the two line conductors 6a are preferably the same. By making the lengths of the two line conductors 6a the same, it is possible to prevent a phase difference from occurring in the electric signal transmitted through the two line conductors 6a.

また、線路導体６ａは線路導体６ａの両側に等間隔をあけて同一面に設けられた同一面接地導体とともにコプレーナ線路を形成してもよい。この場合、Ｇ（接地導体）−Ｓ（線路導体）−Ｇ（接地導体）、またはＧ−Ｓ−Ｓ−Ｇとなるように、線路導体６ａおよび同一面接地導体を配置する。この構成により、線路導体６ａに高周波信号を伝送させても、高周波信号を同一面接地導体によって安定に接地させ、所定のインピーダンス値に整合させることができる。その結果、線路導体６ａを伝送する高周波信号に反射損失や透過損失等の伝送損失が発生するのを抑制し、線路導体６ａを伝送する高周波信号を効率良く伝送させることができる。   Further, the line conductor 6a may form a coplanar line together with the same surface ground conductor provided on the same surface at equal intervals on both sides of the line conductor 6a. In this case, the line conductor 6a and the same-surface ground conductor are arranged so as to be G (ground conductor) -S (line conductor) -G (ground conductor) or GSSS. With this configuration, even when a high-frequency signal is transmitted to the line conductor 6a, the high-frequency signal can be stably grounded by the same surface ground conductor and matched to a predetermined impedance value. As a result, it is possible to suppress the occurrence of transmission loss such as reflection loss and transmission loss in the high-frequency signal transmitted through the line conductor 6a, and to efficiently transmit the high-frequency signal transmitted through the line conductor 6a.

搭載用基板７についても、上述の線路導体６ａが設けられる場合、線路導体６ａと同様にして線路導体７ａを設ければよい。   The mounting substrate 7 may be provided with the line conductor 7a in the same manner as the line conductor 6a when the above-described line conductor 6a is provided.

図３では、保持部材１１に２個の同軸コネクタ３を設け１組の差動線路を設けた例を示したが、これに限定されることはなく、保持部材１１に４個以上の偶数個の同軸コネクタ３を設け、差動線路を２組以上設けても構わない。差動線路を２組以上設けることで、接続用基板６および搭載用基板７をより多機能なものとすることができる。   Although FIG. 3 shows an example in which the holding member 11 is provided with two coaxial connectors 3 and a pair of differential lines is provided, the present invention is not limited to this, and the holding member 11 has an even number of four or more. The coaxial connector 3 may be provided, and two or more sets of differential lines may be provided. By providing two or more sets of differential lines, the connection substrate 6 and the mounting substrate 7 can be made more multifunctional.

次に、保持部材１１の上面に回路基板として接続用基板６または搭載用基板７を有する場合を例に、以下説明する。   Next, an example in which the connection substrate 6 or the mounting substrate 7 is provided as a circuit board on the upper surface of the holding member 11 will be described below.

接続用基板６および搭載用基板７は、アルミナ（Ａｌ２Ｏ３）質焼結体や窒化アルミニウム（ＡｌＮ）質焼結体等のセラミックスや樹脂等の絶縁体から成り、外側平面視形状が四角形，五角形，六角形，八角形等の多角形の基板状のものである。 The connection substrate 6 and the mounting substrate 7 are made of an insulator such as ceramic or resin such as an alumina (Al 2 O 3 ) sintered body or an aluminum nitride (AlN) sintered body, and the outer plan view shape is a quadrangle. , Pentagonal, hexagonal, octagonal and other polygonal substrates.

ここで、接続用基板６と搭載用基板７とがアルミナ質焼結体からなる場合のセラミックグリーンシートの製造方法の例として以下の工程が挙げられる。すなわち、まず、Ａｌ２Ｏ３，ＳｉＯ２，ＭｇＯ，ＣａＯ等の原料粉末に適当な有機バインダ，溶剤等を添加混合してスラリーと成す。次に、このスラリーをドクターブレード法やカレンダーロール法によってセラミックグリーンシートと成し、所要の大きさに切断することによって作製される。なお、セラミックグリーンシートを形成する代わりに、Ａｌ２Ｏ３，ＳｉＯ２，ＭｇＯ，ＣａＯ等の原料粉末に適当な有機バインダ，溶剤等を添加混合してセラミック顆粒体と成し、このセラミック顆粒体を金型成形することにより所望の基板形状に作製してもよい。 Here, the following processes are mentioned as an example of the manufacturing method of the ceramic green sheet in case the connection substrate 6 and the mounting substrate 7 are made of an alumina sintered body. That is, first, an appropriate organic binder, solvent, and the like are added to and mixed with raw material powders such as Al 2 O 3 , SiO 2 , MgO, and CaO to form a slurry. Next, this slurry is formed into a ceramic green sheet by a doctor blade method or a calender roll method, and is produced by cutting to a required size. In addition, instead of forming a ceramic green sheet, an appropriate organic binder, solvent, etc. are added to and mixed with raw material powders such as Al 2 O 3 , SiO 2 , MgO, and CaO to form ceramic granules. May be formed into a desired substrate shape by molding.

また、接続用基板６および搭載用基板７には、その上側主面にそれぞれ線路導体６ａおよび線路導体７ａが形成されている。好ましくは、線路導体６ａ，７ａに加えて下側主面に下側主面接地導体が形成されていてもよいし、コプレーナ線路を形成する場合においては、線路導体６ａ，７ａと同一面に同一面接地導体が形成されていてもよい。接続用基板６および搭載用基板７に形成された接地導体と保持部材１１とを電気的に接続すれば、保持部材１１をグランド電位として使用することができるため、グランド電位を安定して維持できる接続用基板６および搭載用基板７とすることができる。   The connection substrate 6 and the mounting substrate 7 are respectively provided with a line conductor 6a and a line conductor 7a on the upper main surface thereof. Preferably, a lower main surface ground conductor may be formed on the lower main surface in addition to the line conductors 6a and 7a. When a coplanar line is formed, it is the same surface as the line conductors 6a and 7a. A surface ground conductor may be formed. If the grounding conductor formed on the connection substrate 6 and the mounting substrate 7 and the holding member 11 are electrically connected, the holding member 11 can be used as the ground potential, so that the ground potential can be stably maintained. The connection substrate 6 and the mounting substrate 7 can be obtained.

線路導体６ａ，７ａは、接続用基板６および搭載用基板７がセラミックスからなる場合、セラミックグリーンシート表面にタングステン（Ｗ），モリブデン（Ｍｏ），マンガン（Ｍｎ）等の高融点金属からなる金属ペーストをスクリーン印刷法等により印刷塗布し、これらセラミックグリーンシートを必要に応じて積層した後に約1600℃の温度で焼成することにより形成することができる。   The line conductors 6a and 7a are metal pastes made of a refractory metal such as tungsten (W), molybdenum (Mo), manganese (Mn) on the surface of the ceramic green sheet when the connecting substrate 6 and the mounting substrate 7 are made of ceramics. Can be formed by printing at a temperature of about 1600 ° C. after the ceramic green sheets are laminated as necessary.

また、これら線路導体６ａ，７ａの他、下側主面接地導体、同一面接地導体としてタングステン，モリブデン，マンガン等の高融点金属からなるメタライズ層を形成することができる。すなわち、当該メタライズ層は、タングステン，モリブデン，マンガン等からなる金属ペーストを接続用基板６および搭載用基板７の表面に塗布し、高温で焼成することによって形成される。また、コプレーナ線路を形成する場合、同一面接地導体と下側主面接地導体とを貫通導体を介して電気的に接続してもよく、この場合、接続用基板６および搭載用基板７に貫通孔を形成し、この貫通孔にタングステン，モリブデン，マンガン等からなる金属ペーストを充填し、高温で焼成することによって形成される。   In addition to these line conductors 6a and 7a, a metallized layer made of a refractory metal such as tungsten, molybdenum or manganese can be formed as the lower main surface ground conductor and the same surface ground conductor. That is, the metallized layer is formed by applying a metal paste made of tungsten, molybdenum, manganese, or the like to the surfaces of the connection substrate 6 and the mounting substrate 7 and firing at a high temperature. In the case of forming a coplanar line, the same surface ground conductor and the lower main surface ground conductor may be electrically connected via a through conductor. In this case, the connection substrate 6 and the mounting substrate 7 are penetrated. A hole is formed, and the through hole is filled with a metal paste made of tungsten, molybdenum, manganese or the like, and fired at a high temperature.

焼成後のメタライズ層の表面には金やニッケル等からなる金属層がメッキ法等によって被着されているのがよい。この構成により、メタライズ層の腐食防止や、導電性を向上させることができる。   A metal layer made of gold, nickel, or the like is preferably deposited on the surface of the metallized layer after firing by a plating method or the like. With this configuration, it is possible to prevent corrosion of the metallized layer and improve conductivity.

なお、線路導体６ａ，７ａ、下側主面接地導体、同一面接地導体はメタライズ層で形成する代わりに薄膜金属形成法によって形成されていてもよく、その場合、線路導体６ａ，７ａ、下側主面接地導体、同一面接地導体は窒化タンタル（Ｔａ２Ｎ）、ニクロム（Ｎｉ−Ｃｒ合金）、チタン（Ｔｉ）、パラジウム（Ｐｄ）、白金（Ｐｔ）、金（Ａｕ）等から形成され、セラミックグリーンシートを焼成した後に蒸着等の加工を施すことによって形成される。 The line conductors 6a and 7a, the lower main surface ground conductor, and the same surface ground conductor may be formed by a thin film metal forming method instead of being formed of a metallized layer. In this case, the line conductors 6a and 7a The main surface ground conductor and the same surface ground conductor are made of tantalum nitride (Ta 2 N), nichrome (Ni—Cr alloy), titanium (Ti), palladium (Pd), platinum (Pt), gold (Au), etc. The ceramic green sheet is formed by firing and then processing such as vapor deposition.

上述した接続用基板６は、保持部材１１の棚部１１ｃ上に、例えば金（Ａｕ）−錫（Ｓｎ）半田等の接合材を介して接合され、上述した搭載用基板７は、保持部材１１の台座部１１ｂ上に、例えば金−錫半田等の接合材を介して接合され、本発明に係る保持部材１１を得ることができる。   The connection substrate 6 described above is bonded onto the shelf portion 11c of the holding member 11 via a bonding material such as gold (Au) -tin (Sn) solder, and the mounting substrate 7 described above is connected to the holding member 11. The holding member 11 according to the present invention can be obtained by being bonded onto the base portion 11b via a bonding material such as gold-tin solder.

好ましくは、図４に示すように、保持部材１１の台座部１１ｂ，棚部１１ｃ上面の幅が回路基板（接続用基板６または搭載用基板７）の下面の幅より幅狭とされているのがよい。すなわち、線路導体６ａの線路方向に直角な方向において、保持部材１１の台座部１１ｂの上面の幅が、接続用基板６の下面の幅より幅狭であり、かつ棚部１１ｃの上面の幅が搭載用基板７の下面の幅より幅狭であるのがよい。なお、図３は、図１（ａ）の平面図において回路基板６，７および保持部材１１を正面（図１（ａ）においては下方向）から見た正面図を示す。図１（ａ）においては、保持部材１１の方が回路基板６，７より幅広であるように示されている。   Preferably, as shown in FIG. 4, the width of the upper surface of the pedestal 11b and shelf 11c of the holding member 11 is narrower than the width of the lower surface of the circuit board (the connection board 6 or the mounting board 7). Is good. That is, in the direction perpendicular to the line direction of the line conductor 6a, the width of the upper surface of the pedestal portion 11b of the holding member 11 is narrower than the width of the lower surface of the connection substrate 6 and the width of the upper surface of the shelf portion 11c. The width is preferably narrower than the width of the lower surface of the mounting substrate 7. 3 shows a front view of the circuit boards 6 and 7 and the holding member 11 viewed from the front (downward in FIG. 1A) in the plan view of FIG. In FIG. 1A, the holding member 11 is shown to be wider than the circuit boards 6 and 7.

この構成によれば、接続用基板６および搭載用基板７を保持部材１１の上面に設置し接合すると、接続用基板６および搭載用基板７が保持部材１１より外側に張り出すようになるので、接続用基板６および搭載用基板７を保持部材１１に接合した際に、接続用基板６および搭載用基板７の外周部に保持部材１１との熱膨張差による応力が作用しても、接続用基板６および搭載用基板７がクラック等によって破損し難くすることができる。そして、接続用基板６に形成された線路導体６ａおよび搭載用基板７に形成された線路導体７ａが断線する虞を軽減でき、電気信号を効率よく伝送できるパッケージとできる。また、近時の電気信号の高周波化により、接続用基板６および搭載用基板７が薄型化してきているが、接続用基板６および搭載用基板７が薄型化しても、有利なものとできる。   According to this configuration, when the connection substrate 6 and the mounting substrate 7 are installed and joined to the upper surface of the holding member 11, the connection substrate 6 and the mounting substrate 7 protrude outward from the holding member 11. Even when the connection substrate 6 and the mounting substrate 7 are joined to the holding member 11, even if stress due to a difference in thermal expansion from the holding member 11 acts on the outer peripheral portions of the connection substrate 6 and the mounting substrate 7, The substrate 6 and the mounting substrate 7 can be made difficult to be damaged by cracks or the like. In addition, the possibility that the line conductor 6a formed on the connection substrate 6 and the line conductor 7a formed on the mounting substrate 7 are disconnected can be reduced, and a package capable of efficiently transmitting an electric signal can be obtained. Moreover, although the connection substrate 6 and the mounting substrate 7 have become thinner due to the recent increase in the frequency of electrical signals, it can be advantageous even if the connection substrate 6 and the mounting substrate 7 are reduced in thickness.

また、接続用基板６および搭載用基板７が保持部材１１より外側に張り出した箇所において、接続用基板６および搭載用基板７の下面と保持部材１１の側面との間に、接続用基板６および搭載用基板７と保持部材１１とを接合するための接合材のメニスカスを形成することができ、接続用基板６および搭載用基板７と保持部材１１とを強固に接合させることができる。   Further, at the place where the connection substrate 6 and the mounting substrate 7 project outward from the holding member 11, the connection substrate 6 and the mounting substrate 7 are disposed between the lower surface of the connection substrate 6 and the mounting substrate 7 and the side surface of the holding member 11. A meniscus of a bonding material for bonding the mounting substrate 7 and the holding member 11 can be formed, and the connection substrate 6 and the mounting substrate 7 and the holding member 11 can be firmly bonded.

なお、接続用基板６および搭載用基板７の張り出し寸法、すなわち接続用基板６および搭載用基板７の外周部と保持部材１１の上面の外周部との間の距離は０．１ｍｍ〜１ｍｍ程度であるのがよい。   The overhang dimension of the connection substrate 6 and the mounting substrate 7, that is, the distance between the outer peripheral portion of the connection substrate 6 and the mounting substrate 7 and the outer peripheral portion of the upper surface of the holding member 11 is about 0.1 mm to 1 mm. There should be.

以下、同軸コネクタ３および接続用基板６を保持部材１１に接合する方法について説明する。   Hereinafter, a method of joining the coaxial connector 3 and the connection substrate 6 to the holding member 11 will be described.

棚部１１ｃには金−錫半田等の接合材を設置しその上に接続用基板６を設置する。貫通孔１１ａは、壁部２の内外を貫通するように形成され、同軸コネクタ３を挿入するとともに外周導体３ａとの間に金−錫半田等の封着材を挿入する。中心導体３ｂの先端部は、セラミック基板６の上面に突出させ、中心導体３ｂの先端部と線路導体６ａの上面との間に半田等の導電性接着材を載置する。   A bonding material such as gold-tin solder is installed on the shelf 11c, and the connection substrate 6 is installed thereon. The through hole 11a is formed so as to penetrate the inside and outside of the wall portion 2, and the coaxial connector 3 is inserted and a sealing material such as gold-tin solder is inserted between the outer peripheral conductor 3a. The tip of the center conductor 3b is projected from the upper surface of the ceramic substrate 6, and a conductive adhesive such as solder is placed between the tip of the center conductor 3b and the upper surface of the line conductor 6a.

しかる後、加熱して接合材と封着材および導電性接着材を溶融させ、接合材により接続用基板６が棚部１１ｃに強固に固定され、溶融した封着材は毛細管現象により外周導体３ａと貫通孔１１ａの内壁との隙間に充填させることによって、外周導体３ａが貫通孔１１ａ内に金−錫半田等の封着材を介して挿着され、導電性接着材により中心導体３ｂと線路導体６ａとが接続される。   Thereafter, the bonding material, the sealing material, and the conductive adhesive material are melted by heating, and the connecting substrate 6 is firmly fixed to the shelf portion 11c by the bonding material. The outer peripheral conductor 3a is inserted into the through-hole 11a via a sealing material such as gold-tin solder, and the central conductor 3b and the line are connected by a conductive adhesive. The conductor 6a is connected.

かくして、グランドとしての外周導体３ａが保持部材１１に封着材を介して保持部材１１に電気的に接続され、また信号線路としての中心導体３ｂが接続用基板６の線路導体６ａに金−錫半田等からなる導電性接着材を介してそれぞれ電気的に接続される。   Thus, the outer peripheral conductor 3a as the ground is electrically connected to the holding member 11 via the sealing material to the holding member 11, and the center conductor 3b as the signal line is connected to the line conductor 6a of the connecting substrate 6 by gold-tin. Each is electrically connected via a conductive adhesive made of solder or the like.

中心導体３ｂを伝送する高周波信号は、貫通孔１１ａ部において貫通孔１１ａの中心軸を伝送する同軸線路を伝送し、保持部材１１の壁部２内側の面から出て線路導体６ａの一端の半田等の導電性接着材に達した後は、例えばマイクロストリップ線路となっている線路導体６ａ上を伝送する。この同軸線路とマイクロストリップ線路は、所定の特性インピーダンス値に整合されている。導電性接着材の接続部において、中心導体３ｂの先端部の位置、線路導体６ａの位置、および導電性接着材の量により、信号線路のインピーダンスが所定の値に設定されている。このようにして、パッケージ内において、反射損失や透過損失等の伝送損失のない良好な信号線路が形成される。上述したように、線路導体６ａは線路導体６ａの両側に等間隔をあけて同一面に設けられた同一面接地導体とともにコプレーナ線路を形成してもよい。
＜パッケージ＞
次に、上述した保持部材１１を用いたパッケージについて以下に説明する。 The high-frequency signal transmitted through the center conductor 3b is transmitted through a coaxial line that transmits the central axis of the through hole 11a in the through hole 11a, exits from the inner surface of the wall 2 of the holding member 11, and solders at one end of the line conductor 6a. After reaching the conductive adhesive material such as, it is transmitted on the line conductor 6a which is a microstrip line, for example. The coaxial line and the microstrip line are matched to a predetermined characteristic impedance value. In the connection portion of the conductive adhesive, the impedance of the signal line is set to a predetermined value depending on the position of the tip of the center conductor 3b, the position of the line conductor 6a, and the amount of the conductive adhesive. In this way, a good signal line without transmission loss such as reflection loss or transmission loss is formed in the package. As described above, the line conductor 6a may form a coplanar line together with the same surface ground conductor provided on the same surface at equal intervals on both sides of the line conductor 6a.
<Package>
Next, a package using the above-described holding member 11 will be described below.

本発明に係るパッケージは、キャビティ１ｃを有する基体１の壁部２にキャビティ１ｃに通じる複数の開口部２ａ，２ｂを有する容器体１と、第１の開口部２ａに設けられ、光半導体素子５に光信号を入出力するための窓部材１２と、第２の開口部２ｂに設けられ、開口部２ｂに挿入されるコネクタ３を保持するための保持部材１１と、を具備し、保持部材１１は、光半導体素子５を搭載するための台座部１１ｂが一体形成されてなるものである。   The package according to the present invention is provided in a container body 1 having a plurality of openings 2a and 2b communicating with the cavity 1c in the wall 2 of the base body 1 having the cavity 1c, and in the first opening 2a. And a holding member 11 for holding the connector 3 provided in the second opening 2b and inserted in the opening 2b. Is formed by integrally forming a pedestal portion 11b for mounting the optical semiconductor element 5 thereon.

このような構成とすることにより、台座を別途形成しなくともよいため、台座を底板部１ａに設置する際の位置合わせが不要となる。   By adopting such a configuration, it is not necessary to separately form a pedestal, so that positioning when the pedestal is installed on the bottom plate portion 1a becomes unnecessary.

また、ネジ止め用の貫通孔１ｂは底板部１ａの平面視形状が図１（ａ），図３（ａ）に示す四角形状である場合、四角形の四隅の４箇所に設けられるのがよい。この構成により、底板部１ａを外部回路基板や外部放熱板等に固定する際に、底板部１ａの裏面と外部回路基板や外部放熱板等との接触面積を大きくすることができる。この結果、容器体１から外部回路基板や外部放熱板等へ効率良く熱を伝え、容器体１から外部の熱放散性を向上させることができる。   Further, when the bottom plate portion 1a has a quadrangular shape shown in FIG. 1 (a) and FIG. 3 (a), the through holes 1b for screwing are preferably provided at four corners of the quadrilateral. With this configuration, when the bottom plate portion 1a is fixed to an external circuit board, an external heat sink, or the like, the contact area between the back surface of the bottom plate portion 1a and the external circuit board, the external heat sink, or the like can be increased. As a result, heat can be efficiently transmitted from the container body 1 to an external circuit board, an external heat sink, etc., and the external heat dissipation from the container body 1 can be improved.

図３（ｂ）においては、底板部１ａの厚さが全面にわたって均一になっている場合を示しているが、好ましくは、底板部１ａの厚さは、ネジ止め用の貫通孔１ｂが設けられる部位とその周囲が残部に比べて薄くなっているのがよい。この構成により、ネジ止め時に貫通孔１ｂが設けられる部位とその周囲の底板部１ａが優先的に変形して、貫通孔１ｂをネジ止めしても、底板部１ａ全体が変形するのを抑制できる。   FIG. 3B shows a case where the thickness of the bottom plate portion 1a is uniform over the entire surface. Preferably, the thickness of the bottom plate portion 1a is provided with a through hole 1b for screwing. The part and its surroundings should be thinner than the rest. With this configuration, it is possible to suppress the deformation of the entire bottom plate portion 1a even if the portion where the through hole 1b is provided at the time of screwing and the surrounding bottom plate portion 1a are preferentially deformed and the through hole 1b is screwed. .

また、台座を別途形成する場合と比較して、台座部１１ｂと保持部材１１との間隙を形成しなくともよいため、パッケージの小型化に繋がる。さらには、コネクタ３から光半導体素子５までの距離を短くでき、電気信号の伝送損失の発生を抑制できる。   Further, it is not necessary to form a gap between the pedestal portion 11b and the holding member 11 as compared with the case where the pedestal is separately formed, which leads to a reduction in the size of the package. Furthermore, the distance from the connector 3 to the optical semiconductor element 5 can be shortened, and the occurrence of transmission loss of electrical signals can be suppressed.

好ましくは、図３に示すように、保持部材１１は、壁部２との接合部に鍔部１１ｅが設けられ、鍔部１１ｅが壁部２の第２の開口部２ａ周囲に接合され、取り付けられているのがよい。この構成により、鍔部１１ｅが壁部２の第２の開口部２ａ周囲に接合され、取り付けられていることから、図１に示すような鍔部１１ｅの外周形状を開口部２ａの内周に嵌合する構造と比較して、寸法精度を緩和することができる。その結果、壁部２と保持部材１１を効率良く製造できるとともに、壁部２と保持部材１１の製造コストを安価なものとすることができる。   Preferably, as shown in FIG. 3, the holding member 11 is provided with a flange portion 11 e at a joint portion with the wall portion 2, and the flange portion 11 e is joined and attached around the second opening portion 2 a of the wall portion 2. It is good to be. With this configuration, since the flange portion 11e is joined and attached around the second opening 2a of the wall portion 2, the outer peripheral shape of the flange portion 11e as shown in FIG. 1 is set to the inner periphery of the opening portion 2a. Compared with the fitting structure, the dimensional accuracy can be relaxed. As a result, the wall 2 and the holding member 11 can be efficiently manufactured, and the manufacturing cost of the wall 2 and the holding member 11 can be reduced.

保持部材１１と窓部材１２の取り付け位置については、例えば、図１に示すように、四角枠状の壁部２の一辺に第１の開口部２ａが設けられるとともに、第１の開口部２ａが設けられた辺に隣接する辺に第２の開口部２ａが設けられ、開口部２ａ，２ｂにそれぞれ窓部材１２と保持部材１１とが取り付けられる。この場合例えば、光半導体素子５が窓部材１２に光学的に結合するように対向する位置となるように台座部１１ｂをパッケージ内側に突出させておく。   With respect to the attachment positions of the holding member 11 and the window member 12, for example, as shown in FIG. 1, a first opening 2a is provided on one side of the square frame-shaped wall 2, and the first opening 2a is A second opening 2a is provided on a side adjacent to the provided side, and a window member 12 and a holding member 11 are attached to the openings 2a and 2b, respectively. In this case, for example, the pedestal portion 11b is protruded to the inside of the package so that the optical semiconductor element 5 is positioned so as to be optically coupled to the window member 12.

また例えば、図３に示すように、四角枠状の壁部２の一辺に第１の開口部２ａが設けられるとともに、第１の開口部２ａが設けられた辺と対向する辺に第２の開口部２ａが設けられ、開口部２ａ，２ｂにそれぞれ窓部材１２と保持部材１１とが取り付けられてもよい。   Further, for example, as shown in FIG. 3, a first opening 2 a is provided on one side of the square frame-like wall portion 2, and a second side is provided on the side opposite to the side on which the first opening 2 a is provided. An opening 2a may be provided, and the window member 12 and the holding member 11 may be attached to the openings 2a and 2b, respectively.

好ましくは、図１に示すように、四隅に設けられた貫通孔１ｂに対して、貫通孔１ｂ同士の距離が長くなる側（長辺側）の四角枠状の壁部２の一辺に第２の開口部２ａが設けられ、開口部２ｂに保持部材１１が取り付けられるのがよい。この構成により、貫通孔１ｂ同士の距離が長くネジ止め時に変形し易い長辺側の壁部２が保持部材１１により補強され、貫通孔１ｂをネジ止めしても壁部２の変形を抑制できる。その結果、貫通孔１ｂをネジ止めしても、台座部１１ｂの光半導体素子５が所定位置に保持され、光半導体素子５と窓部材１２との間で光信号を良好に入出力させることができる。
＜光半導体装置＞
最後に、上述したパッケージを用いた光半導体装置について以下に説明する。 Preferably, as shown in FIG. 1, the second is formed on one side of the rectangular frame-like wall portion 2 on the side (long side) where the distance between the through holes 1 b is longer than the through holes 1 b provided at the four corners. The opening 2a is provided, and the holding member 11 is preferably attached to the opening 2b. With this configuration, the long-side wall portion 2 that has a long distance between the through-holes 1b and is easily deformed when screwed is reinforced by the holding member 11, and deformation of the wall portion 2 can be suppressed even if the through-hole 1b is screwed. . As a result, even if the through-hole 1b is screwed, the optical semiconductor element 5 of the pedestal portion 11b is held at a predetermined position, and an optical signal can be input / output between the optical semiconductor element 5 and the window member 12 satisfactorily. it can.
<Optical semiconductor device>
Finally, an optical semiconductor device using the above-described package will be described below.

本発明にかかる光半導体装置の一例は、上述したパッケージと、台座部１１ｂ上に設けられた光半導体素子５と、容器体１に取着され、パッケージを気密封止する封止部材と、を具備したものである。例えば、光半導体素子５の電極と搭載用基板７の上面に被着された線路導体７ａとをボンディングワイヤ８により電気的に接続し、しかる後、壁部２の上面に鉄−ニッケル−コバルト合金等の金属からなる蓋体４を半田付け法やシーム溶接法により接合すればよい。   An example of the optical semiconductor device according to the present invention includes the above-described package, the optical semiconductor element 5 provided on the pedestal portion 11b, and a sealing member that is attached to the container body 1 and hermetically seals the package. It is equipped. For example, the electrode of the optical semiconductor element 5 and the line conductor 7a attached to the upper surface of the mounting substrate 7 are electrically connected by the bonding wire 8, and then an iron-nickel-cobalt alloy is formed on the upper surface of the wall portion 2. What is necessary is just to join the cover body 4 which consists of metals, such as, by the soldering method or the seam welding method.

このような構成とすることにより、窓部材１２と光半導体素子５との位置合わせを良好にして光信号を効率良く伝送でき、また熱放散性が良好で正常且つ安定に作動する小型の光半導体装置を提供できる。   By adopting such a configuration, a small-sized optical semiconductor capable of efficiently transmitting an optical signal with good alignment between the window member 12 and the optical semiconductor element 5 and having a good heat dissipation property and operating normally and stably. Equipment can be provided.

なお、光半導体装置において、窓部材１２と光半導体素子５との間にミラーやプリズム等の光学部品（図示せず）が設けられていてもよい。この構成により、例えば、光半導体素子５が半導体レーザ（ＬＤ）等の発光素子である場合、光半導体素子５から発光した光をミラーやプリズム等の光学部品を介して、窓部材１２に導いて光半導体装置外部へ出射させることが可能となり、光半導体素子５と窓部材１２とを対向する位置に配置する必要が無くなる。従って、光半導体素子５の搭載位置の自由度を向上させることができる。   In the optical semiconductor device, an optical component (not shown) such as a mirror or a prism may be provided between the window member 12 and the optical semiconductor element 5. With this configuration, for example, when the optical semiconductor element 5 is a light emitting element such as a semiconductor laser (LD), light emitted from the optical semiconductor element 5 is guided to the window member 12 via an optical component such as a mirror or a prism. The light can be emitted to the outside of the optical semiconductor device, and it is not necessary to arrange the optical semiconductor element 5 and the window member 12 at positions facing each other. Accordingly, the degree of freedom of the mounting position of the optical semiconductor element 5 can be improved.

光半導体素子５がフォトダイオード（ＰＤ）等の受光素子である場合も、窓部材１２から光半導体装置内部に入射してくる光を、ミラーやプリズム等の光学部品を介して、光半導体素子５に導いて受光させることが可能となり、光半導体素子５が発光素子である場合と同様、光半導体素子５の搭載位置の自由度を向上させることができる。   Even when the optical semiconductor element 5 is a light receiving element such as a photodiode (PD), the light incident on the inside of the optical semiconductor device from the window member 12 is passed through an optical component such as a mirror or a prism. As in the case where the optical semiconductor element 5 is a light emitting element, the degree of freedom of the mounting position of the optical semiconductor element 5 can be improved.

また、図１乃至図３に示す光半導体装置は、底板部１ａの外周側に設けられた貫通孔１ｂをネジ止めすることにより、外部回路基板や外部放熱板等に実装される。また、同軸コネクタ３と外部電気回路に接続された同軸ケーブルとを接続することにより、内部に収容する光半導体素子５が外部電気回路に電気的に接続され、光半導体素子５が高周波信号で作動することとなる。   The optical semiconductor device shown in FIGS. 1 to 3 is mounted on an external circuit board, an external heat radiating plate, or the like by screwing a through hole 1b provided on the outer peripheral side of the bottom plate portion 1a. Further, by connecting the coaxial connector 3 and the coaxial cable connected to the external electric circuit, the optical semiconductor element 5 accommodated therein is electrically connected to the external electric circuit, and the optical semiconductor element 5 operates with a high frequency signal. Will be.

貫通孔１ｂを外部回路基板にネジ止めして実装する際、パッケージ製造時のロウ付け工程において反りが発生していた底板部１ａの反りが矯正され、容器体１に外力や変形が加わることとなる。本発明のパッケージにおいては、容器体１に外力や変形が加わった場合においても、図１，乃至図３に示すように、保持部材１１の下面はキャビティ１ｃの中空に位置する。すなわち、保持部材１１の下面と底板部１ａとの間に空間を設けることによって、台座部１１ｂおよび棚部１１ｃの下面と底板部１ａとの間に空間がある。この構成により、保持部材１１の先端の変位量は、保持部材１１の下面が底板部１ａに接合されている場合に比べ小さいので、光半導体素子５の位置ズレを抑制し、光結合効率の高いパッケージを提供することができる。   When the through-hole 1b is screwed to the external circuit board and mounted, the warp of the bottom plate portion 1a that has been warped in the brazing process at the time of package manufacture is corrected, and external force or deformation is applied to the container body 1. Become. In the package of the present invention, even when an external force or deformation is applied to the container body 1, as shown in FIGS. 1 to 3, the lower surface of the holding member 11 is positioned in the cavity 1c. That is, by providing a space between the lower surface of the holding member 11 and the bottom plate portion 1a, there is a space between the lower surface of the pedestal portion 11b and the shelf portion 11c and the bottom plate portion 1a. With this configuration, the amount of displacement of the tip of the holding member 11 is smaller than that when the lower surface of the holding member 11 is joined to the bottom plate portion 1a. Package can be provided.

本発明の一例にかかる電子装置は、特に周波数が５〜５０ＧＨｚ程度の高周波信号の伝送特性を良好なものとすることができる。   The electronic device according to an example of the present invention can particularly improve the transmission characteristics of a high-frequency signal having a frequency of about 5 to 50 GHz.

なお、本発明は上記実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更は何等差し支えない。   It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention.

１：基体（容器体）
１ｃ：キャビティ
２：壁部
２ａ：第１の開口部
２ｂ：第２の開口部
３：同軸コネクタ（コネクタ）
４：蓋体（封止部材）
５：光半導体素子
６：接続用基板
７：搭載用基板
１１：保持部材
１１ｂ：台座部 1: Substrate (container)
1c: Cavity 2: Wall 2a: First opening 2b: Second opening 3: Coaxial connector (connector)
4: Lid (sealing member)
5: Optical semiconductor element 6: Substrate for connection 7: Substrate for mounting 11: Holding member 11b: Base part

Claims (9)

光半導体素子が収納されるキャビティを有する基体の壁部に前記キャビティに通じる複数の開口部を有する容器体と、
第１の前記開口部に設けられ、前記光半導体素子に光信号を入出力するための窓部材と、
第２の前記開口部に設けられ、該第２の開口部に挿入されるコネクタを保持するための保持部材と、
を具備し、
前記保持部材は、前記光半導体素子を搭載するための台座部が一体形成されてなるとともに、その下面と前記キャビティの底面との間に空隙を介して設けられていることを特徴とする半導体素子収納用パッケージ。 A container body having a plurality of openings communicating with the cavity in a wall portion of a base body having a cavity in which the optical semiconductor element is accommodated;
A window member provided in the first opening for inputting / outputting an optical signal to / from the optical semiconductor element;
A holding member for holding a connector provided in the second opening and inserted into the second opening;
Comprising
The holding member is formed integrally with a pedestal for mounting the optical semiconductor element, and is provided between the lower surface of the holding member and the bottom surface of the cavity via a gap. Storage package. 前記保持部材は、前記台座部から前記壁部にかけて漸次厚くなるように形成されていることを特徴とする請求項１記載の半導体素子収納用パッケージ。 2. The package for housing a semiconductor element according to claim 1, wherein the holding member is formed so as to gradually increase in thickness from the base portion to the wall portion. 前記保持部材は、金属からなることを特徴とする請求項１または請求項２に記載の半導体素子収納用パッケージ。 The package for housing a semiconductor element according to claim 1, wherein the holding member is made of metal. 前記保持部材は、鉄−ニッケル−コバルト合金からなることを特徴とする請求項１乃至請求項３のいずれかに記載の半導体素子収納用パッケージ。 4. The package for housing a semiconductor device according to claim 1, wherein the holding member is made of an iron-nickel-cobalt alloy. 前記保持部材の上面に取着され、前記コネクタおよび前記光半導体素子と電気的に接続するための回路基板をさらに有することを特徴とする請求項１乃至請求項４のいずれかに記載の半導体素子収納用パッケージ。 5. The semiconductor device according to claim 1, further comprising a circuit board attached to an upper surface of the holding member and electrically connected to the connector and the optical semiconductor device. Storage package. 前記保持部材に複数個の前記コネクタが取り付けられていることを特徴とする請求項１乃至請求項５のいずれかに記載の半導体素子収納用パッケージ。 6. The semiconductor element storage package according to claim 1, wherein a plurality of the connectors are attached to the holding member. 前記保持部材の上面が前記回路基板の下面より幅狭とされていることを特徴とする請求項５または請求項６に記載の半導体素子収納用パッケージ。 The package for housing a semiconductor element according to claim 5, wherein an upper surface of the holding member is narrower than a lower surface of the circuit board. 前記保持部材は、前記壁部との接合部に鍔部が設けられ、該鍔部が前記壁部の第２の前記開口部周囲に接合され、取り付けられていることを特徴とする請求項１乃至請求項７のいずれかに記載の半導体素子収納用パッケージ。 The said holding member is provided with a collar part in a joint part with the wall part, and the collar part is joined and attached around the second opening part of the wall part. A package for housing a semiconductor device according to claim 7. 請求項１乃至請求項８のいずれかに記載の半導体素子収納用パッケージと、
前記台座部上に設けられた光半導体素子と、
前記容器体に取着され、前記パッケージを気密封止する封止部材と、
を具備した光半導体装置。 A package for housing a semiconductor device according to any one of claims 1 to 8,
An optical semiconductor element provided on the pedestal,
A sealing member attached to the container body and hermetically sealing the package;
An optical semiconductor device comprising:
JP2009042840A 2008-02-26 2009-02-25 Semiconductor element storage package and optical semiconductor device Expired - Fee Related JP5153682B2 (en)

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