JP5135796B2 - スイッチング素子、および書き換え可能な論理集積回路 - Google Patents
スイッチング素子、および書き換え可能な論理集積回路 Download PDFInfo
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- JP5135796B2 JP5135796B2 JP2006550720A JP2006550720A JP5135796B2 JP 5135796 B2 JP5135796 B2 JP 5135796B2 JP 2006550720 A JP2006550720 A JP 2006550720A JP 2006550720 A JP2006550720 A JP 2006550720A JP 5135796 B2 JP5135796 B2 JP 5135796B2
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- 150000002500 ions Chemical class 0.000 claims description 62
- 238000009792 diffusion process Methods 0.000 claims description 32
- 229910021645 metal ion Inorganic materials 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000002265 prevention Effects 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 3
- 210000004027 cell Anatomy 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 7
- 229910001431 copper ion Inorganic materials 0.000 description 7
- 210000001787 dendrite Anatomy 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000003487 electrochemical reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VTJUKNSKBAOEHE-UHFFFAOYSA-N calixarene Chemical compound COC(=O)COC1=C(CC=2C(=C(CC=3C(=C(C4)C=C(C=3)C(C)(C)C)OCC(=O)OC)C=C(C=2)C(C)(C)C)OCC(=O)OC)C=C(C(C)(C)C)C=C1CC1=C(OCC(=O)OC)C4=CC(C(C)(C)C)=C1 VTJUKNSKBAOEHE-UHFFFAOYSA-N 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8416—Electrodes adapted for supplying ionic species
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
31、32 第2電極
34、35 第3電極
40、42 イオン伝導層
90 拡散防止層
Claims (7)
- 金属イオンを伝導するためのイオン伝導層と、
前記イオン伝導層に接して設けられた第1電極および第2電極と、
前記イオン伝導層に前記金属イオンを供給可能な第3電極と、
前記イオン伝導層および第3電極の間に設けられ、該第3電極から前記イオン伝導層に金属イオンが拡散するのを防止するための拡散防止層と、
を有し、
前記イオン伝導層は硫化銅で形成され、前記拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されている、スイッチング素子。 - 前記第1電極および第2電極を接続する金属析出物が設けられた請求項1記載のスイッチング素子。
- 前記第2電極は前記イオン伝導層に前記金属イオンを供給可能な材料を有し、
前記第2電極およびイオン伝導層の間に前記拡散防止層が設けられた請求項1または2記載のスイッチング素子。 - 少なくとも金属イオンを伝導するためのイオン伝導層と、第1電極と、第2電極と、前記イオン伝導層に前記金属イオンを供給可能な第3電極と、よりなるスイッチング素子であって、
前記第1電極は前記イオン伝導層の一方の面に接して設けられ、
前記イオン伝導層の他方の面には前記第2電極と、前記第3電極が離間して設けられ、
前記第2電極は前記イオン伝導層と接しており、
前記第3電極と前記イオン伝導層の間には拡散防止層を有し、
前記イオン伝導層は硫化銅で形成され、前記拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されていることを特徴とするスイッチング素子。 - 少なくとも金属イオンを伝導するためのイオン伝導層と、第1電極と、第2電極と、前記イオン伝導層に前記金属イオンを供給可能な第3電極と、よりなるスイッチング素子であって、
基体上に前記第2電極と前記第3電極が離間して設けられ、
少なくとも前記第3電極上には第1の拡散防止層を有し、
少なくとも前記第2電極と前記第3電極の間及び前記第1の拡散防止層に接するように前記イオン伝導層が設けられ、前記イオン伝導層上に前記第1電極が設けられ、
前記イオン伝導層は硫化銅で形成され、前記第1の拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されていることを特徴とするスイッチング素子。 - 前記第2電極上に第2の拡散防止層を有し、前記イオン伝導層が第2の拡散防止層上にも延在し、該第2の拡散防止層は酸化タンタル、シリコン酸化膜、またはアルミナで形成されていることを特徴とする請求項5記載のスイッチング素子。
- 請求項1から6のいずれか1項記載のスイッチング素子をスイッチに用いた書き換え可能な論理集積回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006550720A JP5135796B2 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004378699 | 2004-12-28 | ||
JP2004378699 | 2004-12-28 | ||
JP2006550720A JP5135796B2 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
PCT/JP2005/023571 WO2006070681A1 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
Publications (2)
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JPWO2006070681A1 JPWO2006070681A1 (ja) | 2008-08-07 |
JP5135796B2 true JP5135796B2 (ja) | 2013-02-06 |
Family
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JP2006550720A Expired - Fee Related JP5135796B2 (ja) | 2004-12-28 | 2005-12-22 | スイッチング素子、および書き換え可能な論理集積回路 |
Country Status (3)
Country | Link |
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US (1) | US7781891B2 (ja) |
JP (1) | JP5135796B2 (ja) |
WO (1) | WO2006070681A1 (ja) |
Families Citing this family (2)
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WO2006075731A1 (ja) * | 2005-01-17 | 2006-07-20 | Nec Corporation | 固体電解質スイッチング素子およびその製造方法ならびに集積回路 |
JPWO2009157479A1 (ja) * | 2008-06-26 | 2011-12-15 | 日本電気株式会社 | スイッチング素子およびスイッチング素子の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
JP2006123267A (ja) * | 2004-10-27 | 2006-05-18 | Shinano Kenshi Co Ltd | マーキング装置 |
JP2006173267A (ja) * | 2004-12-14 | 2006-06-29 | Sony Corp | 記憶素子及び記憶装置 |
WO2006070773A1 (ja) * | 2004-12-28 | 2006-07-06 | Nec Corporation | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69825923T2 (de) * | 1997-12-04 | 2005-09-01 | Axon Technologies Corp., Scottsdale | Programmierbare aggregierende Unterflächenmetallisierungsstruktur |
WO2000048196A1 (en) | 1999-02-11 | 2000-08-17 | Arizona Board Of Regents | Programmable microelectronic devices and methods of forming and programming same |
JP3593582B2 (ja) * | 2001-09-19 | 2004-11-24 | 彰 土井 | 銀イオン含有イオン伝導体の電界誘導黒化現象を利用した記憶素子 |
WO2003094227A1 (en) * | 2002-04-30 | 2003-11-13 | Japan Science And Technology Agency | Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device |
US7186998B2 (en) * | 2003-03-10 | 2007-03-06 | Energy Conversion Devices, Inc. | Multi-terminal device having logic functional |
US7050319B2 (en) * | 2003-12-03 | 2006-05-23 | Micron Technology, Inc. | Memory architecture and method of manufacture and operation thereof |
-
2005
- 2005-12-22 WO PCT/JP2005/023571 patent/WO2006070681A1/ja active Application Filing
- 2005-12-22 US US11/813,072 patent/US7781891B2/en active Active
- 2005-12-22 JP JP2006550720A patent/JP5135796B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5761115A (en) * | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
JP2006123267A (ja) * | 2004-10-27 | 2006-05-18 | Shinano Kenshi Co Ltd | マーキング装置 |
JP2006173267A (ja) * | 2004-12-14 | 2006-06-29 | Sony Corp | 記憶素子及び記憶装置 |
WO2006070773A1 (ja) * | 2004-12-28 | 2006-07-06 | Nec Corporation | スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子 |
Non-Patent Citations (2)
Title |
---|
JPN6012053539; N.Banno et al.: 'Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Swi' IEEE Transactions on Electron Devices Vol.55, No.11, 200811, pp.3283-3287 * |
JPN6012053540; K.Aratani et al.: 'A Novel Resistance Memory with High Scalability and Nanosecond Switching' Electron Devices Meeting, 2007. IEDM 2007. IEEE International , 20071210, pp.783-786 * |
Also Published As
Publication number | Publication date |
---|---|
US20080211096A1 (en) | 2008-09-04 |
WO2006070681A1 (ja) | 2006-07-06 |
US7781891B2 (en) | 2010-08-24 |
JPWO2006070681A1 (ja) | 2008-08-07 |
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