JP5130193B2 - 半導体素子駆動用集積回路及び電力変換装置 - Google Patents
半導体素子駆動用集積回路及び電力変換装置 Download PDFInfo
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Description
本発明の第1実施例を図1乃至図7に基づいて説明する。図1乃至図3は本実施例のドライバICの構成を示す。図4は本実施例のドライバICの絶縁配線基板の構成を示す。図5は本実施例のドライバICの回路構成を示す。図6,図7は本実施例のインバータ装置の構成を示す。本実施例のインバータ装置は、電動機を車両の唯一の駆動源とする電気自動車,内燃機関であるエンジンと電動機との両方を車両の駆動源とするハイブリッド自動車などの電動自動車に搭載された電機駆動システムに用いられる電力変換装置であり、車載電源であるバッテリから供給された直流電力を交流電力に変換して交流電動機(例えば誘導電動機,同期電動機)に供給するものである。
本発明の第2実施例を図8乃至図13に基づいて説明する。図8乃至図11は本実施例のドライバICの構成を示す。図12は本実施例のドライバICのレベルシフト回路内の寄生容量を示す。図13は本実施例のドライバICの回路構成を示す。尚、以下においては、前例と異なる構成についてのみ説明し、その他の説明は省略する。
本発明の第3実施例を図14乃至図18に基づいて説明する。図14乃至図16は、本実施例のドライバICの構成を示す。図17,図18は、本実施例のインバータ装置の構成を示す。尚、以下においては、前例と異なる構成についてのみ説明し、その他の説明は省略する。
本発明の第4実施例を図19乃至図23に基づいて説明する。図19乃至図21は本実施例のドライバICの構成を示す。図22,図23は本実施例のDC−DCコンバータ装置の構成を示す。
本発明の第5実施例を図24,図25に基づいて説明する。図24,図25は本実施例のドライバICの構成を示す。
本発明の第6実施例を図26に基づいて説明する。図26は本実施例のドライバICの実装構成を示す。
Claims (9)
- 直流電流を交流電流に変換するインバータ回路を構成する複数の電力用半導体素子を駆動するための半導体駆動用集積回路であって、
前記電力用半導体素子のスイッチングのタイミングに関する入力指令を取得するとともに当該入力指令に基づいて駆動信号を出力する駆動信号処理回路部を含んで構成されるICチップと、
前記駆動信号に基づいて前記電力用半導体素子をスイッチングさせるための駆動電力を出力する出力段バッファ回路部と、
前記駆動信号処理回路部と前記出力段バッファ回路部を実装する絶縁配線基板と、
前記絶縁配線基板と接続されるとともに前記駆動電力を伝達する外部出力端子と、
前記駆動信号処理回路部から出力される前記駆動信号の電位を変換するレベルシフト回路を構成するレベルシフト用チップと、を備え、
前記出力段バッファ回路部は、前記ICチップとは分離して設けられる複数のMOSーFETチップにより構成され、
前記複数のMOSーFETチップは、前記ICチップよりも前記外部出力端子に近づけて配置され、
前記インバータ回路は、上アーム側の電力用半導体素子と下アーム側の電力用半導体素子との直列回路を構成し、
前記複数のMOSーFETチップは、前記上アーム側の電力用半導体素子に前記駆動電力を出力する上アーム側MOSーFETチップと、前記下アーム側の電力用半導体素子に前記駆動電力を出力する下アーム側MOSーFETチップと、を含んで構成され、
前記ICチップは、前記下アーム側MOSーFETチップを駆動する下アーム側駆動回路及び前記駆動信号処理回路部を有する下アームICチップと、前記上アーム側MOSーFETチップを駆動する上アーム側駆動回路を有する上アームICチップと、を含んで構成され、
前記レベルシフト用チップと前記下アームICチップと前記上アームICチップは、それぞれ分離されて前記絶縁配線基板に実装される半導体集積回路装置。 - 請求項1に記載の半導体集積回路装置であって、
前記外部出力端子は、複数設けられるとともに当該複数の外部出力端子は前記絶縁配線基板の周縁部に沿って一列に配置され、
前記上アーム側MOSーFETチップは、前記上アームICチップと前記外部出力端子との間に配置され、
前記下アーム側MOSーFETチップは、前記下アームICチップと前記外部出力端子との間に配置される半導体集積回路装置。 - 請求項1又は2に記載のいずれかの半導体集積回路装置であって、
前記レベルシフト用チップは、前記下アームICチップと前記上アームICチップとの間に配置される半導体集積回路装置。 - 請求項1ないし3に記載のいずれかの半導体集積回路装置であって、
前記複数のMOSーFETチップ、前記ICチップ及び前記絶縁配線基板は、封止部材により覆われる半導体集積回路装置。 - 請求項1ないし4に記載のいずれかの半導体集積回路装置であって、
前記外部出力端子は球状の半田によって構成される半導体素子駆動用集積回路。 - 請求項1に記載の半導体集積回路装置であって、
前記複数のMOSーFETチップは、縦型構造素子である半導体素子駆動用集積回路。 - 請求項1ないし5に記載のいずれかの半導体集積回路装置であって、
前記レベルシフト用チップは、縦型構造素子である半導体素子駆動用集積回路。 - 請求項1ないし7に記載のいずれかの半導体集積回路装置を用いたインバータ装置。
- 請求項1ないし7に記載のいずれかの半導体集積回路装置を用いたDCDCコンバータ装置。
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US9000829B2 (en) * | 2012-04-16 | 2015-04-07 | International Rectifier Corporation | System on chip for power inverter |
JP5921491B2 (ja) | 2013-06-13 | 2016-05-24 | 三菱電機株式会社 | 電力用半導体装置 |
JP7170272B2 (ja) * | 2019-03-27 | 2022-11-14 | ネクスファイ・テクノロジー株式会社 | パワー基板とそれを備えた高電圧モジュール |
CN113725199B (zh) * | 2021-07-27 | 2023-11-28 | 南瑞联研半导体有限责任公司 | 一种低电感压接型半导体模块 |
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US4965710A (en) * | 1989-11-16 | 1990-10-23 | International Rectifier Corporation | Insulated gate bipolar transistor power module |
JP2763237B2 (ja) * | 1992-11-02 | 1998-06-11 | 株式会社日立製作所 | レベルシフト回路及びこれを用いたインバータ装置 |
JP3516789B2 (ja) * | 1995-11-15 | 2004-04-05 | 三菱電機株式会社 | 半導体パワーモジュール |
JP3674333B2 (ja) * | 1998-09-11 | 2005-07-20 | 株式会社日立製作所 | パワー半導体モジュール並びにそれを用いた電動機駆動システム |
JP2002232280A (ja) * | 2001-02-06 | 2002-08-16 | Denso Corp | 負荷制御装置 |
JP3723869B2 (ja) * | 2001-03-30 | 2005-12-07 | 株式会社日立製作所 | 半導体装置 |
JP2002368191A (ja) * | 2001-06-07 | 2002-12-20 | Hitachi Ltd | 電気車用制御装置 |
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