JP5126741B2 - 電界放射型電子源 - Google Patents
電界放射型電子源 Download PDFInfo
- Publication number
- JP5126741B2 JP5126741B2 JP2007335190A JP2007335190A JP5126741B2 JP 5126741 B2 JP5126741 B2 JP 5126741B2 JP 2007335190 A JP2007335190 A JP 2007335190A JP 2007335190 A JP2007335190 A JP 2007335190A JP 5126741 B2 JP5126741 B2 JP 5126741B2
- Authority
- JP
- Japan
- Prior art keywords
- electron source
- field emission
- cold cathode
- emission electron
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
Description
前記式(1)によれば、仕事関数φを低くすることにより大きな放出電流Jを得ることができることが明らかである。
〔比較例〕
まず、前記実施例と全く同一にして、タングステンからなる冷陰極を形成し、これを本比較例の電界放射型電子源とした。本比較例の電界放射型電子源の冷陰極の尖端には、前記芳香族化合物の分子は蒸着されていない。
Claims (3)
- 電界が印加されることにより電子を放出する電界放射型電子源において、
冷陰極の尖端に、芳香族化合物の個々の分子を直立するように蒸着してなることを特徴とする電界放射型電子源。 - 前記芳香族化合物は、ベンゼン、フタロシアニン、フラバントロン、トリ−8−ハイドロキノリンアルミニウム、コロネン、ペンタセンからなる群から選択される1種の化合物であることを特徴とする請求項1記載の電界放射型電子源。
- 前記冷陰極は、タングステン、チタン、タンタル、六ホウ化ランタンからなる群から選択される1種の材料であることを特徴とする請求項1又は請求項2記載の電界放射型電子源。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007335190A JP5126741B2 (ja) | 2007-12-26 | 2007-12-26 | 電界放射型電子源 |
US12/343,396 US8405294B2 (en) | 2007-12-26 | 2008-12-23 | Field emission electron source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007335190A JP5126741B2 (ja) | 2007-12-26 | 2007-12-26 | 電界放射型電子源 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009158304A JP2009158304A (ja) | 2009-07-16 |
JP5126741B2 true JP5126741B2 (ja) | 2013-01-23 |
Family
ID=40962090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007335190A Expired - Fee Related JP5126741B2 (ja) | 2007-12-26 | 2007-12-26 | 電界放射型電子源 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8405294B2 (ja) |
JP (1) | JP5126741B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8730823B2 (en) | 2011-06-24 | 2014-05-20 | Jasper Wireless, Inc. | Core services platform for wireless voice, data and messaging network services |
JP6028277B2 (ja) * | 2012-07-30 | 2016-11-16 | 国立研究開発法人物質・材料研究機構 | 金属ホウ化物フィールドエミッター作製方法 |
JP6325904B2 (ja) * | 2014-06-02 | 2018-05-16 | キヤノン株式会社 | 固体撮像装置の製造方法、固体撮像装置、および、カメラ |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5726524A (en) * | 1996-05-31 | 1998-03-10 | Minnesota Mining And Manufacturing Company | Field emission device having nanostructured emitters |
DE69728410T2 (de) * | 1996-08-08 | 2005-05-04 | William Marsh Rice University, Houston | Makroskopisch manipulierbare, aus nanoröhrenanordnungen hergestellte vorrichtungen |
JPH11297189A (ja) | 1998-04-10 | 1999-10-29 | Jeol Ltd | 電界放出冷陰極およびその製造方法 |
JP3494583B2 (ja) | 1999-01-13 | 2004-02-09 | 松下電器産業株式会社 | 電子放出素子の製造方法 |
US6265722B1 (en) * | 1999-08-31 | 2001-07-24 | Micron Technology, Inc. | Organic field ionization source |
US6521324B1 (en) * | 1999-11-30 | 2003-02-18 | 3M Innovative Properties Company | Thermal transfer of microstructured layers |
JP2002179418A (ja) * | 2000-12-13 | 2002-06-26 | Tohoku Techno Arch Co Ltd | カーボン・ナノチューブ作成方法 |
CN1643636A (zh) * | 2001-06-14 | 2005-07-20 | 海珀里昂催化国际有限公司 | 采用改进的碳纳米管的场发射器件 |
KR20030060611A (ko) * | 2002-01-10 | 2003-07-16 | 삼성전자주식회사 | 보호막을 가지는 탄소나노튜브를 구비하는 전계방출소자 |
JP2005032500A (ja) * | 2003-07-10 | 2005-02-03 | Hitachi High-Technologies Corp | 冷陰極とそれを用いた電子源及び電子線装置 |
US20050067936A1 (en) * | 2003-09-25 | 2005-03-31 | Lee Ji Ung | Self-aligned gated carbon nanotube field emitter structures and associated methods of fabrication |
US7312562B2 (en) * | 2004-02-04 | 2007-12-25 | Chevron U.S.A. Inc. | Heterodiamondoid-containing field emission devices |
JP4658490B2 (ja) * | 2004-02-26 | 2011-03-23 | 大研化学工業株式会社 | 電子源及びその製造方法 |
JP2005276498A (ja) * | 2004-03-23 | 2005-10-06 | Fuji Xerox Co Ltd | 電子線発生素子とその製造方法 |
JP2006331997A (ja) * | 2005-05-30 | 2006-12-07 | Dialight Japan Co Ltd | 電子源およびそれを備えた電子線応用装置 |
US7839067B2 (en) * | 2005-08-10 | 2010-11-23 | Pureron Japan Co., Ltd. | Carbon film having shape suitable for field emission |
KR20070106231A (ko) * | 2006-04-28 | 2007-11-01 | 삼성에스디아이 주식회사 | 전자 방출원 형성용 조성물, 이를 이용하는 전자 방출원의제조 방법, 이 방법에 의해 제조된 전자 방출원 및 전자방출 소자 |
-
2007
- 2007-12-26 JP JP2007335190A patent/JP5126741B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-23 US US12/343,396 patent/US8405294B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100033072A1 (en) | 2010-02-11 |
US8405294B2 (en) | 2013-03-26 |
JP2009158304A (ja) | 2009-07-16 |
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