JP5124578B2 - 構造化した焼結活性表面を有する半製品およびその製造方法 - Google Patents
構造化した焼結活性表面を有する半製品およびその製造方法 Download PDFInfo
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- JP5124578B2 JP5124578B2 JP2009524177A JP2009524177A JP5124578B2 JP 5124578 B2 JP5124578 B2 JP 5124578B2 JP 2009524177 A JP2009524177 A JP 2009524177A JP 2009524177 A JP2009524177 A JP 2009524177A JP 5124578 B2 JP5124578 B2 JP 5124578B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000011265 semifinished product Substances 0.000 title description 72
- 238000005245 sintering Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 32
- 239000004020 conductor Substances 0.000 claims description 26
- 230000003647 oxidation Effects 0.000 claims description 26
- 238000007254 oxidation reaction Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 25
- 239000000843 powder Substances 0.000 claims description 21
- 239000010410 layer Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000003870 refractory metal Substances 0.000 claims description 14
- 239000011777 magnesium Substances 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 10
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 9
- 239000010955 niobium Substances 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 238000002048 anodisation reaction Methods 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002203 pretreatment Methods 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 239000003638 chemical reducing agent Substances 0.000 description 7
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 3
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- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- 239000000155 melt Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
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- -1 Alternatively Inorganic materials 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101150027068 DEGS1 gene Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910020012 Nb—Ti Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Description
以下の実施例に記載される陽極の還元、形成および測定は、実施例内に特に記載されない限り、以下のパラメータに基づいて行った。
比表面積の測定をBET測定、即ち、Braunauner、EmmettおよびTellerによるガス収着によって、Micromeritics社のTristar型の装置を用いて実施した。
形成電圧 20V
形成電流 1mA/g
最終形成時間 2時間
電解質 0.1% H3PO4
温度 85℃。
電解質 10% H3PO4
温度 23℃
周波数 120Hz。
微視的表面を、測定したキャパシタンスから、式
C=ε*A/d
[式中、
Cは測定されたキャパシタンス、εは金属酸化物の誘電率(ここで五酸化タンタルの場合、εは27×10-12Fm-1)、dは形成電圧1ボルト当たり2nmの厚さと仮定して、陽極酸化電圧から算出された誘電酸化物層の厚さ(陽極酸化電圧20Vで40nm)、Aは決定される微視的表面]
によって算出した。
酸化された半製品を次に、微細な網目の格子上に置き、その下にるつぼを配置した。該るつぼは酸素含有率に対して2倍の化学量論組成量のマグネシウムを含有した。その後、加熱をアルゴン下、950℃までで1時間行った。それによってマグネシウムを蒸発させ、そしてその上の半製品の酸化物層と反応させた。金属表面の冷却後、パッシベーション用に空気をゆっくりと添加した。還元材料を、リン酸で洗浄し、次に完全脱イオン水(FD水)で中性に洗浄し、そして乾燥させた。
実施例1
Taシート(1cm×1cm)を0.1%リン酸中85℃、150Vで、定電流で形成し、そして定電位でさらに2時間形成する。約300nmの厚さの酸化物層を該シート上に形成する。形成されたシートをFD水で洗浄し、そして乾燥させる。前記の製品を次に、上述のように還元した。
Taシート(1cm×1cm)を0.1%リン酸中85℃、400Vで、定電流で形成し、そして定電位でさらに2時間陽極酸化する。約800nmの厚さの酸化物層を該シート上に形成する。形成されたシートをFD水で洗浄し、そして乾燥させる。前記の製品を次に、上述のように還元した。
Taワイヤー(直径=0.49mm)を0.1%リン酸中85℃、400Vで、定電流で形成し、そして定電位でさらに2時間形成する。約800nmの厚さの酸化物層を該ワイヤー上に形成する。形成されたワイヤーをFD水で洗浄し、そして乾燥させる。前記の製品を次に、上述のように還元した。
Claims (19)
- 酸化および次の再還元によって得られる表面層を有する陽極または陽極導電体であって、該表面層が、粗面化された構造を有する焼結活性表面であり、且つ、該表面層が、チタン、モリブデン、タングステン、ニオブ、タンタル、ジルコニウム、ハフニウム、バナジウムおよびクロムからなる群からの少なくとも1つの高融点金属、あるいは1つあるいはそれより多くのそれらの金属を含有する合金を含有する、前記陽極または陽極導電体。
- 陽極または陽極導電体および/またはその被膜が、異なる金属および/または金属イオンで、および/または1つあるいはそれより多くのリン、窒素、ケイ素あるいはホウ素の元素でドープされていることを特徴とする、請求項1に記載の陽極または陽極導電体。
- 粗面化された構造を有する表面層が、50nm〜50μmの厚さであることを特徴とする、請求項1または2に記載の陽極または陽極導電体。
- 酸化および次の還元後の陽極または陽極導電体の比表面積が、酸化および次の還元を含む処理前の陽極または陽極導電体の比表面積と比較して、およそ10〜100,000倍大きいことを特徴とする、請求項1から3までのいずれか1項に記載の陽極または陽極導電体。
- 形成電圧20Vで陽極または陽極導電体を形成することによって製品を前処理した後の測定によって決定される、粗面化された構造を有する表面層が、厚さ50nm〜10μmを有し、且つ、基礎面積1cm 2 あたり1μF〜50μFのキャパシタンスを有することを特徴とする、請求項1から4までのいずれか1項に記載の陽極または陽極導電体。
- 焼結による、0.3m 2 /gより大きい比表面積を有する材料での被覆のために適した、請求項1から5までのいずれか1項に記載の陽極または陽極導電体。
- 請求項1から6までのいずれか1項に記載の陽極または陽極導電体を含有する素子。
- 請求項1から6までのいずれか1項に記載の陽極または陽極導電体上に、0.3m 2 /gより大きい比表面積を有するさらなる材料を焼結させた陽極または陽極導電体を含有する、請求項7に記載の素子。
- 0.3m 2 /gより大きい比表面積を有する材料が、粉末であることを特徴とする、請求項8に記載の素子。
- 0.3m 2 /gより大きい比表面積を有する材料が、チタン、モリブデン、タングステン、ニオブ、タンタル、ジルコニウム、ハフニウム、バナジウムおよびクロムからなる群からの高融点金属、あるいは1つあるいはそれより多くのそれらの金属を含有する合金を含有することを特徴とする、請求項8に記載の素子。
- 請求項1から6までのいずれか1項に記載の表面構造化陽極または陽極導電体の製造方法において、
a)チタン、モリブデン、タングステン、ニオブ、タンタル、ジルコニウム、ハフニウム、バナジウムおよびクロムからなる群からの少なくとも1つの高融点金属、あるいは1つあるいはそれより多くのそれらの金属を含有する合金を含有する表面層の酸化、および
b)酸化した表面層の次の還元
を含む方法。 - 陽極または陽極導電体の表面層を、処理前に少なくとも部分的に覆って、覆われていない領域だけに請求項11に記載の処理をすることを特徴とする、請求項11に記載の方法。
- 酸化が、熱酸化、陽極酸化あるいは化学酸化であることを特徴とする、請求項11または12のいずれか1項に記載の方法。
- 還元を、リチウム、マグネシウム、カルシウム、バリウム、ストロンチウム、アルミニウム、それらの水素化物あるいは水素によって実施することを特徴とする、請求項11から13までのいずれか1項に記載の方法。
- 還元を、リチウム、マグネシウム、カルシウム、バリウム、ストロンチウムあるいはアルミニウムの蒸気によって実施し、使用する金属に応じて還元を650℃〜3000℃の温度で実施することを特徴とする、請求項14に記載の方法。
- 請求項11の段階a)における酸化に供される陽極または陽極導電体が、熱処理の下で生産された陽極または陽極導電体であることを特徴とする、請求項11から15までのいずれか1項に記載の方法。
- 素子の製造方法において、
0.3m 2 /gより大きい比表面積を有する材料を、請求項11から15までのいずれか1項に記載の方法において得られる表面構造化陽極または陽極導電体の上に焼結工程によって結合させることを特徴とする方法。 - 少なくとも1つの高融点金属を含有する0.3m 2 /gより大きい比表面積を有する材料を表面構造化陽極または陽極導電体上へ焼結することを、1500℃より低い温度で実施することを特徴とする、請求項17に記載の方法。
- 請求項1から5までのいずれか1項に記載の表面構造化陽極または陽極導電体を、0.3m 2 /gより大きい比表面積を有する材料と共に表面構造化陽極または陽極導電体を焼結することによる素子の製造のために用いる使用。
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BRPI0714447B1 (pt) | 2006-07-19 | 2019-02-19 | Basf Se | Processo para preparar partículas poliméricas absorvedoras de água, partículas poliméricas absorvedoras de água, uso das particulás poliméricas, e, artigo de higiene |
KR20140017606A (ko) * | 2011-05-13 | 2014-02-11 | 아사히 가라스 가부시키가이샤 | 도전성 마이에나이트 화합물의 제조 방법 |
CN104246933B (zh) * | 2012-06-22 | 2017-11-10 | 昭和电工株式会社 | 电容器的阳极体 |
CN103147036B (zh) * | 2012-12-20 | 2015-04-22 | 浙江易锋机械有限公司 | 汽车空调压缩机配件的局部渗碳方法 |
US20160322169A1 (en) * | 2013-12-20 | 2016-11-03 | Showa Denko K.K. | Tungsten powder, anode body for capacitors, and electrolytic capacitor |
WO2015093155A1 (ja) * | 2013-12-20 | 2015-06-25 | 昭和電工株式会社 | タングステン粉、コンデンサの陽極体、及び電解コンデンサ |
JP6011593B2 (ja) | 2014-10-22 | 2016-10-19 | 三菱マテリアル株式会社 | 銅多孔質焼結体の製造方法及び銅多孔質複合部材の製造方法 |
JP6065059B2 (ja) | 2015-06-12 | 2017-01-25 | 三菱マテリアル株式会社 | 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法 |
JP6107888B2 (ja) | 2015-06-12 | 2017-04-05 | 三菱マテリアル株式会社 | 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法 |
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CN109952626B (zh) * | 2016-11-14 | 2021-10-26 | 株式会社村田制作所 | 固体电解电容器元件、固体电解电容器以及固体电解电容器元件的制造方法 |
JP7317852B2 (ja) * | 2018-10-12 | 2023-07-31 | 東洋アルミニウム株式会社 | アルミニウム電解コンデンサ用電極材の製造方法 |
US11289276B2 (en) | 2018-10-30 | 2022-03-29 | Global Advanced Metals Japan K.K. | Porous metal foil and capacitor anodes made therefrom and methods of making same |
JP2022530103A (ja) * | 2019-04-29 | 2022-06-27 | グローバル アドバンスト メタルズ ユー.エス.エー.,インコーポレイティド | Ti-Zr合金粉末及びそれを含有するアノード |
CN110648849B (zh) * | 2019-09-26 | 2021-12-14 | 宇启材料科技南通有限公司 | 一种阀金属多孔体涂层电极箔及制作方法和电解电容器 |
CN111872401B (zh) * | 2020-07-30 | 2022-11-08 | 合肥工业大学 | 一种odsw/tzm合金的放电等离子扩散连接方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US651044A (en) * | 1896-05-23 | 1900-06-05 | Warren D King | Time-damper-operating mechanism. |
US3997341A (en) * | 1974-10-17 | 1976-12-14 | Universal Oil Products Company | Reduced temperature sintering process |
SU851511A1 (ru) | 1979-10-02 | 1981-07-30 | Предприятие П/Я Г-4816 | Лини дл изготовлени оксидно-полу-пРОВОдНиКОВыХ КОНдЕНСАТОРОВ |
JPH04107807A (ja) * | 1990-08-28 | 1992-04-09 | Elna Co Ltd | タンタル固体電解コンデンサ |
JP3068430B2 (ja) | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
JPH09237742A (ja) * | 1996-02-28 | 1997-09-09 | Hitachi Aic Inc | 固体電解コンデンサの製造方法 |
US5954856A (en) * | 1996-04-25 | 1999-09-21 | Cabot Corporation | Method of making tantalum metal powder with controlled size distribution and products made therefrom |
US6051326A (en) * | 1997-04-26 | 2000-04-18 | Cabot Corporation | Valve metal compositions and method |
DE19817405A1 (de) | 1998-04-20 | 1999-10-21 | Becromal Spa | Verfahren zur Herstellung einer Anode für elektrolytische Kondensatoren und so hergestellte Anoden |
CN1258417C (zh) | 1998-05-06 | 2006-06-07 | H·C·施塔克公司 | 金属粉末的制备方法 |
WO2000067936A1 (en) | 1998-05-06 | 2000-11-16 | H.C. Starck, Inc. | Metal powders produced by the reduction of the oxides with gaseous magnesium |
WO2000016353A1 (de) | 1998-09-10 | 2000-03-23 | H.C. Starck Gmbh & Co. Kg | Paste zur herstellung von gesinterten refraktärmetallschichten, insbesondere erdsäuremetall-elektrolytkondensatoren oder -anoden |
US6416730B1 (en) | 1998-09-16 | 2002-07-09 | Cabot Corporation | Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides |
US6226173B1 (en) * | 1999-01-26 | 2001-05-01 | Case Western Reserve University | Directionally-grown capacitor anodes |
FR2788877B1 (fr) | 1999-01-27 | 2001-11-09 | Nichicon Corp | Condensateur electrolytique d'aluminium |
EP1162636A1 (de) * | 1999-06-18 | 2001-12-12 | H.C. Starck GmbH | Erdsäuremetall-Elektrolytkondensatoren oder -anoden |
AU2001231291A1 (en) | 2000-02-03 | 2001-08-14 | Case Western Reserve University | High power capacitors from thin layers of metal powder or metal sponge particles |
DE10307716B4 (de) | 2002-03-12 | 2021-11-18 | Taniobis Gmbh | Ventilmetall-Pulver und Verfahren zu deren Herstellung |
BR0204587A (pt) | 2002-11-04 | 2004-06-29 | Cbmm Sa | Processo de produção de pó de nióbio e/ou de tântalo de elevada área superficial |
EP1618575B1 (en) * | 2003-04-28 | 2019-10-23 | Showa Denko K.K. | Valve acting metal sintered body, production method therefor and solid electrolytic capacitor |
WO2004103906A2 (en) * | 2003-05-19 | 2004-12-02 | Cabot Corporation | Methods of making a niobium metal oxide and oxygen reduced niobium oxides |
DE102004049039B4 (de) * | 2004-10-08 | 2009-05-07 | H.C. Starck Gmbh | Verfahren zur Herstellung feinteiliger Ventilmetallpulver |
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