JP5119606B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP5119606B2 JP5119606B2 JP2006099770A JP2006099770A JP5119606B2 JP 5119606 B2 JP5119606 B2 JP 5119606B2 JP 2006099770 A JP2006099770 A JP 2006099770A JP 2006099770 A JP2006099770 A JP 2006099770A JP 5119606 B2 JP5119606 B2 JP 5119606B2
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- 239000004065 semiconductor Substances 0.000 title claims description 29
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
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- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 4
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
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- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Description
基板上に形成されたフッ素添加カーボン膜からなる絶縁膜と、
前記絶縁膜の上に形成され、シリコンと酸素とを含む膜を備えたハードマスク層と、
前記絶縁膜とハードマスク層との間に、窒化シリコン膜と、シリコン、炭素及び窒素を含む膜と、を下からこの順序で積層して形成され、フッ素添加カーボン膜中のフッ素がハードマスク層へ移動することを抑えるためのバリア層と、を備えたことを特徴とする。ここで前記ハードマスク層におけるシリコンと酸素とを含む膜は、酸素添加炭化ケイ素膜又は二酸化シリコン膜である。
次いで前記基板の表面を、シリコン及び窒素の各活性種を含むプラズマに曝して、前記絶縁膜の上に、窒化シリコン膜よりなる第1のバリア層を成膜する工程と、
次いで前記基板の表面を、シリコン、炭素及び窒素の各活性種を含むプラズマに曝して、前記第1のバリア層の表面に、シリコン、炭素及び窒素を含む膜よりなる第2のバリア層を成膜する工程と、
次いで前記基板の表面を、シリコン及び酸素の各活性種を含むプラズマに曝して、前記第2のバリア層の上にシリコンと酸素とを含む膜を成膜する工程と、を含むことを特徴とする。ここで前記シリコンと酸素とを含む膜は、酸素添加炭化ケイ素膜又は二酸化シリコン膜である。
ジシランガスの供給源及び窒素ガスの供給源と、トリメチルシランガスの供給源とが接続されている。この第2の成膜装置41においては、既にフッ素添加カーボン膜20が成膜された基板1を処理容器61内に搬入し、続いて、処理容器61の内部を所定の圧力まで真空引きする。そして、第1のバリア層であるSiN膜21の成膜が行われるが、その成膜プロセスは、先ず、第1のガス供給部64から処理容器61内にプラズマガス例えばArガスを所定の流量例えば600sccmで供給すると共に、第2のガス供給部68から処理容器61内にジシランガス及び窒素ガスを夫々所定の流量、例えば6sccm、50sccmで供給する。そして、処理容器61内を例えばプロセス圧力16Paに維持し、載置台62のウエハ温度を345℃に設定する。一方、マイクロ波発生手段83から2.45GHz、1500Wの高周波(マイクロ波)を供給することにより、このマイクロ波のエネルギーによってArガスをプラズマ化し、このプラズマによりジシランガス及び窒素ガスが励起され、フッ素添加カーボン膜20の上にSiN膜21が成膜される。
(実施例1)
前記半導体製造装置において、図5に示した成膜装置40を用いて、基板であるシリコンベアウエハの上に、フッ素添加カーボン膜20を200nmの膜厚で成膜し、次いで、第2の成膜装置41を用い、フッ素添加カーボン膜20の上にバリア層として、厚さ10nmのSiN膜21と、厚さ8nmのSiCN22膜とを、この順序で成膜した。続いて、第3の成膜装置50を用い、SiCN22膜の上に、ハードマスク層として、厚さ50nmのSiCO膜23と、厚さ150nmのSiO2膜24とを、この順序で成膜した。各膜のプロセス条件については既述の条件で行った。
フッ素添加カーボン膜20の上にSiN膜21を形成せずに、バリア層として厚さ10nmのSiCN膜22のみを形成し、ハードマスク層として、SiCO膜23とSiO2膜24を形成した他は、実施例1と同様にして成膜を行った(図10参照)。
フッ素添加カーボン膜20の上にSiCN膜22を形成せずに、バリア層として厚さ8nmのSiN膜21のみを形成し、ハードマスク層として、SiCO膜23とSiO2膜24を形成した他は、実施例1と同様にして成膜を行った(図11参照)。
B.密着性についての考察
実施例1及び比較例1,2の基板に対して、常圧、窒素雰囲気の下で、400℃で60分間、アニール処理を行った後、これら基板の表面を目視で観察し、またテープを貼り付けて膜剥れの状態を調べた。この結果、比較例1及び比較例2については、膜中から気泡が発生したことに基づく変色域が多く見られ、比較例1ではSiCN膜22とSiCO膜23との界面での膜剥がれが大きく、比較例2ではフッ素添加カーボン膜20とSiN膜21との界面で小さな膜剥がれがあった。
フッ素添加カーボン膜20とSiN膜21との界面や、SiCN膜22とSiCO膜23との界面でも膜剥がれの発生は全く見られなかった。従って、フッ素添加カーボン膜20とハードマスク層を構成するSiCO膜23との間に、バリア層としてSiN膜21とSiCN膜22とを積層して設けることにより、フッ素添加カーボン膜20とバリア層との間や、バリア層とハードマスク層との間の密着性が大きくなることが理解される。
実施例1の基板に対して、前記アニール処理の前後において、二次イオン質量分析法(SIMS:Secondary Ion Mass Spectroscopy)により、積層体中のフッ素濃度のプロファイルを調べた。また比較例1の基板及び比較例2の基板に対しても、同様のアニール処理の前後において積層体中のフッ素濃度のプロファイルを調べた。
D.酸素に対するバリア性の考察
実施例1及び比較例1,2について、SIMSにより積層構造膜の表面にイオンビームを照射スパッタしたときに放出される二次イオンを質量分析し、二次イオン強度を指標として積層構造膜中の酸素濃度のプロファイルを調べた。その結果を、比較例1及び比較例2については図11に、実施例1及び比較例2については図12に夫々示す。図11及び図12においては、縦軸は二次イオン強度(counts/sec)、横軸は膜の深さ(nm)を夫々示しており、図11及び図12中、実線は実施例1、一点鎖線は比較例1、点線は比較例2のデータを夫々示している。
E.ハードマスク層にフッ素が入り込むメカニズム
以上の実施例を踏まえ、本発明者らは、フッ素添加カーボン膜20のハードマスク層にフッ素が入り込むメカニズムを以下のように推察している。先ず比較例1の積層構造膜を形成する場合は、フッ素添加カーボン膜20の表面にSiCN膜22を成膜するが、このときにフッ素添加カーボン膜20のフッ素がSiCN膜22に入り込み、SiCNFを生成する。次いでこの表面にSiCO膜23を成膜し、この後SiO2膜24を成膜すると、この成膜プロセスにおいて酸素プラズマが用いられるため、酸素の活性種がSiCO膜23を突き抜けて前記SiCN膜22に入り込み、ここに存在するSiCNFに酸素がアタックし、これにより窒素が抜けてしまうので、結果としてフッ素が遊離し易い状態となる。そこで後の工程においてアニール処理を行うと、このフッ素がハードマスク層中に入り込む。
10 フッ素添加カーボン膜
11 銅配線層
20 フッ素添加カーボン膜
21 SiN膜
22 SiCN膜
23 SiCO膜
24 SiO2膜
40 第1の成膜装置
41 第2の成膜装置
50 第3の成膜装置
61 処理容器
64 第1のガス供給部
67 第1のガス供給路
68 第2のガス供給部
72 第2のガス供給路
77 アンテナ部
Claims (5)
- 基板上に形成されたフッ素添加カーボン膜からなる絶縁膜と、
前記絶縁膜の上に形成され、シリコンと酸素とを含む膜を備えたハードマスク層と、
前記絶縁膜とハードマスク層との間に、窒化シリコン膜と、シリコン、炭素及び窒素を含む膜と、を下からこの順序で積層して形成され、フッ素添加カーボン膜中のフッ素がハードマスク層へ移動することを抑えるためのバリア層と、を備えたことを特徴とする半導体装置。 - 前記ハードマスク層におけるシリコンと酸素とを含む膜は、酸素添加炭化ケイ素膜又は二酸化シリコン膜であることを特徴とする請求項1記載の半導体装置。
- 基板上にフッ素添加カーボン膜からなる絶縁膜を成膜する工程と、
次いで前記基板の表面を、シリコン及び窒素の各活性種を含むプラズマに曝して、前記絶縁膜の上に、窒化シリコン膜よりなる第1のバリア層を成膜する工程と、
次いで前記基板の表面を、シリコン、炭素及び窒素の各活性種を含むプラズマに曝して、前記第1のバリア層の表面に、シリコン、炭素及び窒素を含む膜よりなる第2のバリア層を成膜する工程と、
次いで前記基板の表面を、シリコン及び酸素の各活性種を含むプラズマに曝して、前記第2のバリア層の上にシリコンと酸素とを含む膜を成膜する工程と、を含むことを特徴とする半導体装置の製造方法。 - 前記シリコンと酸素とを含む膜は、酸素添加炭化ケイ素膜又は二酸化シリコン膜であることを特徴とする請求項3記載の半導体装置の製造方法。
- 前記フッ素添加カーボン膜からなる絶縁膜を成膜する工程は、成膜プロセス温度が345℃以下で行われることを特徴とする請求項3または4記載の半導体装置の製造方法。
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KR1020087005618A KR100942179B1 (ko) | 2006-03-31 | 2007-03-27 | 반도체 장치 및 반도체 장치의 제조 방법 |
CN2007800013688A CN101356638B (zh) | 2006-03-31 | 2007-03-27 | 半导体装置和半导体装置的制造方法 |
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PCT/JP2007/056447 WO2007116758A1 (ja) | 2006-03-31 | 2007-03-27 | 半導体装置及び半導体装置の製造方法 |
TW096111350A TW200805498A (en) | 2006-03-31 | 2007-03-30 | Semiconductor device and manufacturing method therefor |
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CN101356638A (zh) | 2009-01-28 |
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KR100942179B1 (ko) | 2010-02-11 |
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