JP5119297B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP5119297B2 JP5119297B2 JP2010149656A JP2010149656A JP5119297B2 JP 5119297 B2 JP5119297 B2 JP 5119297B2 JP 2010149656 A JP2010149656 A JP 2010149656A JP 2010149656 A JP2010149656 A JP 2010149656A JP 5119297 B2 JP5119297 B2 JP 5119297B2
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- 239000000758 substrate Substances 0.000 title claims description 224
- 230000002093 peripheral effect Effects 0.000 claims description 196
- 230000008878 coupling Effects 0.000 claims description 23
- 238000010168 coupling process Methods 0.000 claims description 23
- 238000005859 coupling reaction Methods 0.000 claims description 23
- 230000007246 mechanism Effects 0.000 claims description 17
- 238000007599 discharging Methods 0.000 claims description 6
- 239000003507 refrigerant Substances 0.000 description 50
- 238000001816 cooling Methods 0.000 description 10
- 239000002826 coolant Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/32779—Continuous moving of batches of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/201—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated for mounting multiple objects
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Description
10…処理チャンバ
20…基板載置台
22…処理ガス供給機構
23…処理ガス導入部
25…真空ポンプ
26…排気口
28…支持ピン
29…昇降機構
30…突起部
40…周縁載置部材
41…周縁部
43…周縁結合部
50…中央載置部材
51…中央部
53…中央結合部
55…支持台
56、59…隙間
57…穴部
60…周縁温調流路
60a…周縁外側流路
60b…周縁内側流路
60c…接続流路
61…温調媒体導入口
63…温調媒体排出口
65…中央温調流路
67…導入口
69…排出口
70…流量制御機構
80、90…温調媒体供給機構
83、93…導入管
84、94…排出管
100…フィン
110…フォーカスリング
111…隙間
W…基板
W1…基板周縁部
W2…基板中央部
Claims (9)
- 基板を真空処理空間において処理する基板処理装置であって、
少なくとも2枚以上の基板を載置する基板載置台を備え、
前記基板載置台は載置される基板の数と同数の基板載置部から構成され、
前記基板載置部には載置された基板の中央部を温調させる中央温調流路と、
基板の周縁部を温調させる周縁温調流路と、が互いに独立して形成され、
前記基板載置台には前記周縁温調流路に温調媒体を導入させる温調媒体導入口が1つ設けられ、前記周縁温調流路から温調媒体を排出させる温調媒体排出口が載置される基板の数と同数だけ設けられる、基板処理装置。 - 前記周縁温調流路は、
一端部が前記温調媒体導入口に接続され、且つ基板の周縁部に沿って延伸する周縁内側流路と、
一端部が前記温調媒体排出口に接続され、且つ基板の周縁部に沿って延伸する周縁外側流路と、
前記周縁内側流路の他端部と前記周縁外側流路の他端部とを接続する接続流路と、を備え、
前記接続流路と前記温調媒体排出口は、それぞれ前記温調媒体導入口を挟んで当該温調媒体導入口に隣接して配置される、請求項1に記載の基板処理装置。 - 前記中央温調流路と、前記周縁温調流路はそれぞれ異なる温調媒体供給源に接続される、請求項1または2に記載の基板処理装置。
- 前記中央温調流路および前記周縁温調流路の内部上面には、当該上面から突出したフィンが設けられている、請求項1〜3のいずれかに記載の基板処理装置。
- 前記温調媒体排出口には、それぞれ流量制御機構が設置されている、請求項1〜4のいずれかに記載の基板処理装置。
- 前記流量制御機構はそれぞれ独立して制御される、請求項5に記載の基板処理装置。
- 前記基板載置部は、
基板の周縁部を載置して温度制御を行う周縁載置部材と、
基板の中央部を載置して温度制御を行う中央載置部材と、
前記周縁載置部材および前記中央載置部材を支持する支持台から構成され、
前記周縁載置部材の内部には前記周縁温調流路が形成され、
前記中央載置部材の内部には前記中央温調流路が形成され、
前記周縁載置部材と前記中央載置部材の間には隙間が形成され、前記周縁載置部材と前記中央載置部材は非接触である、請求項1〜6のいずれかに記載の基板処理装置。 - 前記周縁載置部材は2つ以上の環状である周縁部と該周縁部同士を結合させる周縁結合部からなり、前記中央載置部材は前記周縁部の内周に対応した形状の2つ以上の中央部と該中央部同士を結合させる中央結合部からなり、前記周縁部と前記中央部の間には水平方向に環状の隙間が形成され、前記周縁結合部と前記中央結合部の間には鉛直方向に隙間が形成され、前記周縁結合部および前記中央結合部はそれぞれ前記支持台に結合される、請求項7に記載の基板処理装置。
- 前記周縁部の外縁部には基板の位置合わせを行うフォーカスリングが設置されている、請求項1〜8のいずれかに記載の基板処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010149656A JP5119297B2 (ja) | 2010-06-30 | 2010-06-30 | 基板処理装置 |
TW100122507A TWI451525B (zh) | 2010-06-30 | 2011-06-27 | Substrate processing device |
KR1020110063340A KR101299891B1 (ko) | 2010-06-30 | 2011-06-29 | 기판 처리 장치 |
US13/172,366 US8741065B2 (en) | 2010-06-30 | 2011-06-29 | Substrate processing apparatus |
CN201110189199.3A CN102315143B (zh) | 2010-06-30 | 2011-06-30 | 基板处理装置 |
DE102011108634A DE102011108634B4 (de) | 2010-06-30 | 2011-06-30 | Substrat-Bearbeitungs-Vorrichtung |
Applications Claiming Priority (1)
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JP2010149656A JP5119297B2 (ja) | 2010-06-30 | 2010-06-30 | 基板処理装置 |
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JP2012015286A JP2012015286A (ja) | 2012-01-19 |
JP5119297B2 true JP5119297B2 (ja) | 2013-01-16 |
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JP2010149656A Active JP5119297B2 (ja) | 2010-06-30 | 2010-06-30 | 基板処理装置 |
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US (1) | US8741065B2 (ja) |
JP (1) | JP5119297B2 (ja) |
KR (1) | KR101299891B1 (ja) |
CN (1) | CN102315143B (ja) |
DE (1) | DE102011108634B4 (ja) |
TW (1) | TWI451525B (ja) |
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