JP5110608B2 - 硫化腐食防止方法、耐硫化腐食性高温部材及び伝熱管の補修方法 - Google Patents
硫化腐食防止方法、耐硫化腐食性高温部材及び伝熱管の補修方法 Download PDFInfo
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- JP5110608B2 JP5110608B2 JP2009506280A JP2009506280A JP5110608B2 JP 5110608 B2 JP5110608 B2 JP 5110608B2 JP 2009506280 A JP2009506280 A JP 2009506280A JP 2009506280 A JP2009506280 A JP 2009506280A JP 5110608 B2 JP5110608 B2 JP 5110608B2
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- titanium
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- oxide layer
- silicon
- containing coating
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- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000005260 corrosion Methods 0.000 title claims abstract description 66
- 230000007797 corrosion Effects 0.000 title claims abstract description 65
- 238000012546 transfer Methods 0.000 title claims description 42
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title claims description 29
- 238000005536 corrosion prevention Methods 0.000 title claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 204
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 203
- 238000000576 coating method Methods 0.000 claims abstract description 134
- 239000011248 coating agent Substances 0.000 claims abstract description 130
- 239000010936 titanium Substances 0.000 claims abstract description 124
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 112
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 110
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 108
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 108
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 97
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 96
- 238000005486 sulfidation Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 150000003609 titanium compounds Chemical class 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 441
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 61
- 239000011247 coating layer Substances 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 31
- 230000003647 oxidation Effects 0.000 claims description 23
- 238000007254 oxidation reaction Methods 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 19
- 150000003377 silicon compounds Chemical class 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 11
- -1 siloxane compound Chemical class 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052810 boron oxide Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052990 silicon hydride Inorganic materials 0.000 claims description 5
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims description 4
- 239000012530 fluid Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 34
- 230000035882 stress Effects 0.000 description 23
- 229910010413 TiO 2 Inorganic materials 0.000 description 18
- 239000002585 base Substances 0.000 description 18
- 238000012360 testing method Methods 0.000 description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 8
- 229910000831 Steel Inorganic materials 0.000 description 6
- 239000011941 photocatalyst Substances 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 4
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 4
- 241000406668 Loxodonta cyclotis Species 0.000 description 4
- 239000003518 caustics Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- VCESGVLABVSDRO-UHFFFAOYSA-L 2-[4-[4-[3,5-bis(4-nitrophenyl)tetrazol-2-ium-2-yl]-3-methoxyphenyl]-2-methoxyphenyl]-3,5-bis(4-nitrophenyl)tetrazol-2-ium;dichloride Chemical compound [Cl-].[Cl-].COC1=CC(C=2C=C(OC)C(=CC=2)[N+]=2N(N=C(N=2)C=2C=CC(=CC=2)[N+]([O-])=O)C=2C=CC(=CC=2)[N+]([O-])=O)=CC=C1[N+]1=NC(C=2C=CC(=CC=2)[N+]([O-])=O)=NN1C1=CC=C([N+]([O-])=O)C=C1 VCESGVLABVSDRO-UHFFFAOYSA-L 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910000349 titanium oxysulfate Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910012465 LiTi Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- MKGYHFFYERNDHK-UHFFFAOYSA-K P(=O)([O-])([O-])[O-].[Ti+4].[Li+] Chemical compound P(=O)([O-])([O-])[O-].[Ti+4].[Li+] MKGYHFFYERNDHK-UHFFFAOYSA-K 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- UHWHMHPXHWHWPX-UHFFFAOYSA-J dipotassium;oxalate;oxotitanium(2+) Chemical compound [K+].[K+].[Ti+2]=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O UHWHMHPXHWHWPX-UHFFFAOYSA-J 0.000 description 1
- MAHNFPMIPQKPPI-UHFFFAOYSA-N disulfur Chemical compound S=S MAHNFPMIPQKPPI-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003949 liquefied natural gas Substances 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- YQXQWFASZYSARF-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC YQXQWFASZYSARF-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- SOBXOQKKUVQETK-UHFFFAOYSA-H titanium(3+);trisulfate Chemical compound [Ti+3].[Ti+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O SOBXOQKKUVQETK-UHFFFAOYSA-H 0.000 description 1
- HDUMBHAAKGUHAR-UHFFFAOYSA-J titanium(4+);disulfate Chemical compound [Ti+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O HDUMBHAAKGUHAR-UHFFFAOYSA-J 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- CENHPXAQKISCGD-UHFFFAOYSA-N trioxathietane 4,4-dioxide Chemical compound O=S1(=O)OOO1 CENHPXAQKISCGD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
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Description
10 基材
20 ケイ素酸化物層
30 第1のチタン酸化物層
40 炭素層
50 第2のチタン酸化物層
図1は、本実施形態に係る耐硫化腐食性高温部材を示す概略図である。図1に示すように、耐硫化腐食性高温部材1は、基材10の表面上にケイ素酸化物層20と、第1のチタン酸化物層30とが順次形成されたものである。
図2は、本実施形態の耐硫化腐食性高温部材を示す概略図である。本実施形態の耐硫化腐食性高温部材1Aは、図2に示すように、第1のチタン酸化物層30上に炭素層40と、第2のチタン酸化物層50とをさらに設けたものである。すなわち、本実施形態の耐硫化腐食性高温部材1Aは、基材10の表面上にケイ素酸化物層20と、第1のチタン酸化物層30と、炭素層40と、第2のチタン酸化物層50とを順次設けた5層構造からなるものである。
実施形態1及び実施形態2では、ケイ素含有塗布液、及びチタン含有塗布液を個別に塗布・加熱酸化したが、これに限定されず、まとめて加熱酸化を行ってもよい。
上述した実施形態1〜3では、硫化腐食などにより亀裂が生じていない基材10の表面上に第1のチタン酸化物層30等を設けることで基材10を硫化腐食から保護したが、本発明はそれに限定されず、亀裂が生じた基材上に第1のチタン酸化物層30等を設けて補修してもよい。例えば、亀裂が生じた基材としては、石炭、石油又はLNG等の燃料を燃焼させる火力発電用ボイラの水壁管、過熱器管、再熱器管などの高温伝熱管を挙げることができる。これらの高温伝熱管の表面には、火力発電用ボイラの運転に伴う還元性燃焼炎(低酸素濃度、高硫化水素濃度下の燃焼)による硫化腐食や熱応力により、エレファントスキンとも呼ばれる亀裂(溝状腐食)が生じることがあり、本発明は、このような亀裂を補修するために用いることも可能である。
上述した実施形態1〜4では、上述したケイ素含有塗布液を塗布した後、加熱酸化することによりケイ素酸化物層20を形成したが、ケイ素酸化物層20の形成方法は特に限定されず、例えばスパッタリングなどで形成してもよい。
クロムモリブデン鋼(STBA24)からなる板状基材の表面上に、二酸化ケイ素層(SiO2層)と、第1の二酸化チタン層(第1のTiO2層)と、炭素層と、第2の二酸化チタン層(第2のTiO2層)とを形成した。この板状基材の大きさは、1mm厚×15mm長×10mm幅とした。
SiO2層を形成しないこと以外は、実施例1と同様にして、クロムモリブデン鋼の表面上に1μmの第1のTiO2層、28μmの炭素層、2.5μmの第2のTiO2層が順次形成された板状試験片Bを得た。
実施例1の板状試験片A、及び比較例1の板状試験片Bを用いて硫化腐食試験を行った。硫化腐食試験は、各板状試験片を硫化水素(H2S)が300ppm含まれた下記表1に示す雰囲気中、500℃で200時間加熱することにより行なった。
Claims (18)
- 基材の表面上に厚さ0.1〜10μmのケイ素酸化物層を形成する第1の工程と、
前記ケイ素酸化物層上にチタン金属又はチタン化合物を含有したチタン含有塗布液を塗布し、加熱酸化させて厚さ0.01〜10μmの第1のチタン酸化物層を形成する第2の工程と
を具備することを特徴とする硫化腐食防止方法。 - 前記第1の工程は、ケイ素化合物を含有したケイ素含有塗布液を塗布し、加熱酸化させてケイ素酸化物層を形成することを特徴とする請求項1に記載の硫化腐食防止方法。
- 前記ケイ素化合物は、水素化ケイ素、シラザン系化合物、シロキサン系化合物及びケイ酸塩の少なくとも何れか一つであることを特徴とする請求項2に記載の硫化腐食防止方法。
- 前記ケイ素含有塗布液は、さらに窒化ホウ素、酸化アルミニウム、酸化マグネシウム、酸化ジルコニウム及び酸化ホウ素の少なくとも何れか一つを含有することを特徴とする請求項2又は請求項3に記載の硫化腐食防止方法。
- 前記第1のチタン酸化物層の表面上に厚さ10〜30μmの炭素層を形成する第3の工程と、
チタン金属又はチタン化合物を含有したチタン含有塗布液を塗布し、加熱酸化させて厚さ0.01〜10μmの第2のチタン酸化物層を形成する第4の工程と
をさらに具備することを特徴とする請求項1〜4の何れか一項に記載の硫化腐食防止方法。 - 基材の表面上にケイ素化合物を含有したケイ素含有塗布液を塗布し、乾燥させてケイ素含有塗布層を形成する第1塗布工程と、
前記ケイ素含有塗布層上にチタン金属又はチタン化合物を含有した第1のチタン含有塗布液を塗布し、乾燥させて第1のチタン含有塗布層を形成する第2塗布工程と、
前記ケイ素含有塗布層及び前記第1のチタン含有塗布層を加熱酸化させて厚さ0.1〜10μmのケイ素酸化物層及び厚さ0.01〜10μmの第1のチタン酸化物層を形成する加熱酸化工程と
を具備することを特徴とする硫化腐食防止方法。 - 前記第2塗布工程後に、前記第1のチタン含有塗布層上に厚さ10〜30μmの炭素層を形成する炭素層形成工程と、
前記炭素層上に第2のチタン含有塗布液を塗布し、乾燥させて第2のチタン含有塗布層を形成する第3塗布工程とを具備し、
前記加熱酸化工程では、前記第3塗布工程後に、前記炭素層を加熱させて脱脂すると共に、前記ケイ素含有塗布層、前記第1のチタン含有塗布層、及び前記第2のチタン含有塗布層を加熱酸化させて厚さ0.1〜10μmの前記ケイ素酸化物層、厚さ0.01〜10μmの前記第1のチタン酸化物層、及び厚さ0.01〜10μmの前記第2のチタン酸化物層を形成することを特徴とする請求項6に記載の硫化腐食防止方法。 - 前記加熱酸化工程後に、前記第1のチタン酸化物層上に厚さ10〜30μmの炭素層を形成する炭素層形成工程と、
前記炭素層上に第2のチタン含有塗布液を塗布・乾燥させると共に加熱して前記炭素層を脱脂すると共に、厚さ0.01〜10μmの第2のチタン酸化物層を形成するチタン酸化物層形成工程とを具備する
ことを特徴とする請求項6に記載の硫化腐食防止方法。 - 基材と、
該基材の表面上に設けられた厚さ0.1〜10μmのケイ素酸化物層と、
該ケイ素酸化物層上に設けられた厚さ0.01〜10μmの第1のチタン酸化物層と
を具備することを特徴とする耐硫化腐食性高温部材。 - 前記第1のチタン酸化物層上に設けられた厚さ10〜30μmの炭素層と、
前記炭素層上に設けられた厚さ0.01〜10μmの第2のチタン酸化物層と
をさらに具備することを特徴とする請求項9に記載の耐硫化腐食性高温部材。 - ボイラに配設された伝熱管の亀裂が生じた部位の表面上に厚さ0.1〜10μmのケイ素酸化物層を形成する第1の工程と、
前記ケイ素酸化物層上にチタン金属又はチタン化合物を含有したチタン含有塗布液を塗布し、加熱酸化させて厚さ0.01〜10μmの第1のチタン酸化物層を形成する第2の工程と
を具備することを特徴とする伝熱管の補修方法。 - 前記第1の工程は、ケイ素化合物を含有したケイ素含有塗布液を塗布し、加熱酸化させて厚さ0.1〜10μmのケイ素酸化物層を形成することを特徴とする請求項11に記載の伝熱管の補修方法。
- 前記ケイ素化合物は、水素化ケイ素、シラザン系化合物、シロキサン系化合物及びケイ酸塩の少なくとも何れか一つであることを特徴とする請求項12に記載の伝熱管の補修方法。
- 前記ケイ素含有塗布液は、さらに窒化ホウ素、酸化アルミニウム、酸化マグネシウム、酸化ジルコニウム及び酸化ホウ素の少なくとも何れか一つを含有することを特徴とする請求項12又は請求項13に記載の伝熱管の補修方法。
- 前記第1のチタン酸化物層の表面上に厚さ10〜30μmの炭素層を形成する第3の工程と、
チタン金属又はチタン化合物を含有したチタン含有塗布液を塗布し、加熱酸化させて厚さ0.01〜10μmの第2のチタン酸化物層を形成する第4の工程と
をさらに具備することを特徴とする請求項11〜14の何れか一項に記載の伝熱管の補修方法。 - ボイラに配設された伝熱管の亀裂が生じた部位の表面上にケイ素化合物を含有したケイ素含有塗布液を塗布し、乾燥させてケイ素含有塗布層を形成する第1塗布工程と、
前記ケイ素含有塗布層上にチタン金属又はチタン化合物を含有した第1のチタン含有塗布液を塗布し、乾燥させて第1のチタン含有塗布層を形成する第2塗布工程と、
前記ケイ素含有塗布層及び前記第1のチタン含有塗布層を加熱酸化させて厚さ0.1〜10μmのケイ素酸化物層及び厚さ0.01〜10μmの第1のチタン酸化物層を形成する加熱酸化工程と
を具備することを特徴とする伝熱管の補修方法。 - 前記第2塗布工程後に、前記第1のチタン含有塗布層上に厚さ10〜30μmの炭素層を形成する炭素層形成工程と、
前記炭素層上に第2のチタン含有塗布液を塗布し、乾燥させて第2のチタン含有塗布層を形成する第3塗布工程とを具備し、
前記加熱酸化工程では、前記第3塗布工程後に、前記炭素層を加熱させて脱脂すると共に、前記ケイ素含有塗布層、前記第1のチタン含有塗布層、及び前記第2のチタン含有塗布層を加熱酸化させて厚さ0.1〜10μmの前記ケイ素酸化物層、厚さ0.01〜10μmの前記第1のチタン酸化物層、及び厚さ0.01〜10μmの前記第2のチタン酸化物層を形成することを特徴とする請求項16に記載の伝熱管の補修方法。 - 前記加熱酸化工程後に、前記第1のチタン酸化物層上に厚さ10〜30μmの炭素層を形成する炭素層形成工程と、
前記炭素層上に第2のチタン含有塗布液を塗布・乾燥させると共に加熱して前記炭素層を脱脂すると共に、厚さ0.01〜10μmの第2のチタン酸化物層を形成するチタン酸化物層形成工程とを具備する
ことを特徴とする請求項16に記載の伝熱管の補修方法。
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JP2007009315A (ja) * | 2005-06-01 | 2007-01-18 | Central Res Inst Of Electric Power Ind | 耐硫化腐食性高温部材及びその製造方法並びに高温部材の硫化腐食防止方法 |
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US4753856A (en) * | 1987-01-02 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from silicate esters and metal oxides |
US6593077B2 (en) * | 1999-03-22 | 2003-07-15 | Special Materials Research And Technology, Inc. | Method of making thin films dielectrics using a process for room temperature wet chemical growth of SiO based oxides on a substrate |
JP2003042403A (ja) * | 2001-07-25 | 2003-02-13 | Babcock Hitachi Kk | 炉壁構造材と該構造材から成る火炉構造 |
US20060057418A1 (en) * | 2004-09-16 | 2006-03-16 | Aeromet Technologies, Inc. | Alluminide coatings containing silicon and yttrium for superalloys and method of forming such coatings |
US7951459B2 (en) * | 2006-11-21 | 2011-05-31 | United Technologies Corporation | Oxidation resistant coatings, processes for coating articles, and their coated articles |
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JPS60125375A (ja) * | 1983-12-07 | 1985-07-04 | Usui Internatl Ind Co Ltd | 金属・セラミツクス接合体及びその製造方法 |
JPS637379A (ja) * | 1986-06-25 | 1988-01-13 | Matsushita Electric Works Ltd | 多層薄膜の製法 |
JPH09272990A (ja) * | 1996-04-05 | 1997-10-21 | Kanmeta Eng Kk | 金属表面の腐食等の防止剤及び腐食等の防止方法 |
JPH10330131A (ja) * | 1997-05-29 | 1998-12-15 | Ichikoh Ind Ltd | 親水性薄膜及びその親水性薄膜を使用した車両用ミラー並びにガラス製品 |
JP2007009315A (ja) * | 2005-06-01 | 2007-01-18 | Central Res Inst Of Electric Power Ind | 耐硫化腐食性高温部材及びその製造方法並びに高温部材の硫化腐食防止方法 |
Also Published As
Publication number | Publication date |
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CN101636524A (zh) | 2010-01-27 |
EP2130943A1 (en) | 2009-12-09 |
EP2130943B1 (en) | 2019-09-11 |
WO2008117665A1 (ja) | 2008-10-02 |
PL2130943T3 (pl) | 2020-05-18 |
US20100233483A1 (en) | 2010-09-16 |
CN101636524B (zh) | 2012-01-04 |
JPWO2008117665A1 (ja) | 2010-07-15 |
EP2130943A4 (en) | 2015-07-08 |
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