JP5108557B2 - ロードロック装置および基板冷却方法 - Google Patents
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- 238000001816 cooling Methods 0.000 title claims description 152
- 239000000758 substrate Substances 0.000 title claims description 97
- 230000032258 transport Effects 0.000 claims description 40
- 230000007246 mechanism Effects 0.000 claims description 30
- 238000013459 approach Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 129
- 239000007789 gas Substances 0.000 description 22
- 238000010926 purge Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 239000002826 coolant Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Description
また、そのような基板の冷却を実現することができるロードロック装置における基板冷却方法を提供することを目的とする。
図1は、本発明の一実施形態に係るロードロック装置が搭載されたマルチチャンバタイプの真空処理システムの概略構造を示す水平断面図である。
図2は本実施形態に係るロードロック装置を示す垂直断面図、図3はその水平断面図である。ロードロック装置6(7)は、容器31を有し、容器31内の下部および上部には、それぞれウエハWが近接されてウエハWを冷却する下部クーリングプレート32および上部クーリングプレート33が設けられている。
5;搬送室
6,7;ロードロック装置
8;搬入出室
12,16;搬送装置
14a,14b,17;支持アーム
20;プロセスコントローラ
31;容器
32;下部クーリングプレート
33;上部クーリングプレート
36;排気口
37;パージガス導入部材
41;排気管
42;開閉バルブ
43;排気速度調整バルブ
44;真空ポンプ
45;パージガス導入配管
46;開閉バルブ
47;流量調節バルブ
48;パージガス源
49;圧力調整機構
50;ウエハ昇降ピン
53;駆動機構
55;冷却媒体流路
60;ウエハ支持アーム
61;ウエハ支持ピン
63;駆動機構
65;冷却媒体流路
70;ユニットコントローラ
73;圧力計
G,G1,G2;ゲートバルブ
W;ウエハ
Claims (7)
- 大気雰囲気から真空に保持された真空室へ基板を搬送し、前記真空室から高温の基板を前記大気雰囲気に搬送する際に用いられるロードロック装置であって、
真空室に対応する圧力と大気圧との間で圧力を変動可能に設けられた容器と、
前記容器内が前記真空室と連通する際に、前記容器内の圧力を前記真空室に対応する圧力に調整し、前記容器内が前記大気雰囲気の空間と連通する際に、前記容器内の圧力を大気圧に調整する圧力調整機構と、
前記容器内に相対向して設けられ、基板が近接または接触することにより基板を冷却する第1および第2の冷却部材と、
前記容器内に搬送された基板を受け取り、前記第1の冷却部材に近接または接触する位置に基板を搬送する第1の搬送手段と、
前記容器内に搬送された基板を受け取り、前記第2の冷却部材に近接する位置に基板を搬送する第2の搬送手段と
を具備し、
前記第2の搬送手段は、この第2の搬送手段が受け取った前記基板が前記第2の冷却部材に接触することを防止するためのストッパを備え、
前記第1の搬送手段は、外部の搬送アームとの間で基板の受け渡しを行う受け渡し位置と、前記第1の冷却部材に近接または接触する冷却位置との間で基板を搬送し、
前記第2の搬送手段は、外部の搬送アームとの間で基板の受け渡しを行う受け渡し位置と、前記第2の冷却部材に近接する冷却位置との間で基板を搬送し、
前記第1の搬送手段および前記第2の搬送手段のうちいずれか一方により前記第1の冷却部材および前記第2の冷却部材のうちいずれか一方で基板を冷却している間に、前記第1の搬送手段および前記第2の搬送手段の他方により前記第1の冷却部材および前記第2の冷却部材の他方へ基板を搬送するように前記第1の搬送手段および前記第2の搬送手段を制御する制御手段を具備することを特徴とするロードロック装置。 - 前記第1の搬送手段および前記第2の搬送手段は、基板を支持する基板支持部と、基板支持部を駆動させる駆動機構とを有することを特徴とする請求項1に記載のロードロック装置。
- 前記第1の冷却部材は、前記容器の下部に設けられ、基板を下方から冷却するものであり、
前記第2の冷却部材は、前記容器の上部に設けられ、基板を上方から冷却するものであることを特徴とする請求項1に記載のロードロック装置。 - 前記第1の搬送手段は、前記第1の冷却部材に突没自在に設けられた支持ピンと、前記支持ピンを昇降させる駆動機構とを有し、
前記第2の搬送手段は、基板を支持して前記第2の冷却部材に接離自在に設けられた基板支持部材と、前記基板支持部材を昇降させる駆動機構とを有することを特徴とする請求項3に記載のロードロック装置。 - 前記第1の搬送手段と、前記第2の搬送手段とは、それぞれ独立した駆動機構を有することを特徴とする請求項2または請求項4に記載のロードロック装置。
- 前記第1の搬送手段と、前記第2の搬送手段とは、共通の駆動機構を有することを特徴とする請求項2または請求項4に記載のロードロック装置。
- 真空室に対応する圧力と大気圧との間で圧力を変動可能に設けられた容器と、前記容器内が前記真空室と連通する際に、前記容器内の圧力を前記真空室に対応する圧力に調整し、前記容器内が前記大気雰囲気の空間と連通する際に、前記容器内の圧力を大気圧に調整する圧力調整機構と、前記容器内に相対向して設けられ、基板が近接または接触することにより基板を冷却する第1および第2の冷却部材と、前記容器内に搬送された基板を受け取り、前記第1の冷却部材に近接または接触する位置に基板を搬送する第1の搬送手段と、前記容器内に搬送された基板を受け取り、前記第2の冷却部材に近接する位置に基板を搬送し、受け取った基板が前記第2の冷却部材に接触することを防止するためのストッパを備えた第2の搬送手段とを具備し、大気雰囲気から真空に保持された真空室へ基板を搬送し、前記真空室から高温の基板を前記大気雰囲気に搬送する際に用いられるロードロック装置における基板冷却方法であって、
前記第1の搬送手段は、外部の搬送アームとの間で基板の受け渡しを行う受け渡し位置と、前記第1の冷却部材に近接または接触する冷却位置との間で基板を搬送し、
前記第2の搬送手段は、外部の搬送アームとの間で基板の受け渡しを行う受け渡し位置と、前記第2の冷却部材に近接する冷却位置との間で基板を搬送し、
前記第1の搬送手段および前記第2の搬送手段のうちいずれか一方により前記第1の冷却部材および前記第2の冷却部材のうちいずれか一方で基板を冷却している間に、前記第1の搬送手段および前記第2の搬送手段の他方により前記第1の冷却部材および前記第2の冷却部材の他方へ基板を搬送することを特徴とする基板冷却方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2008046405A JP5108557B2 (ja) | 2008-02-27 | 2008-02-27 | ロードロック装置および基板冷却方法 |
KR1020107007170A KR20100122893A (ko) | 2008-02-27 | 2009-02-25 | 로드락 장치 및 기판 냉각 방법 |
US12/919,674 US20110000232A1 (en) | 2008-02-27 | 2009-02-25 | Load lock apparatus and substrate cooling method |
PCT/JP2009/053414 WO2009107664A1 (ja) | 2008-02-27 | 2009-02-25 | ロードロック装置および基板冷却方法 |
CN2009801009674A CN101855719B (zh) | 2008-02-27 | 2009-02-25 | 负载锁定装置和基板冷却方法 |
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JP2008046405A JP5108557B2 (ja) | 2008-02-27 | 2008-02-27 | ロードロック装置および基板冷却方法 |
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JP2009206270A JP2009206270A (ja) | 2009-09-10 |
JP5108557B2 true JP5108557B2 (ja) | 2012-12-26 |
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US (1) | US20110000232A1 (ja) |
JP (1) | JP5108557B2 (ja) |
KR (1) | KR20100122893A (ja) |
CN (1) | CN101855719B (ja) |
WO (1) | WO2009107664A1 (ja) |
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JP6476215B2 (ja) * | 2017-01-12 | 2019-02-27 | 東京エレクトロン株式会社 | 減圧乾燥装置、減圧乾燥方法及びベーク処理システム |
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JP7234549B2 (ja) * | 2018-09-12 | 2023-03-08 | 東京エレクトロン株式会社 | 真空搬送モジュール及び真空搬送方法 |
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KR102515863B1 (ko) * | 2020-03-24 | 2023-03-31 | 주식회사 히타치하이테크 | 진공 처리 장치 |
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CN113118317B (zh) * | 2021-04-14 | 2022-05-17 | 深圳数码模汽车技术有限公司 | 一种具有快速冷却功能的汽车顶盖弧形加强板拉延模具 |
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US6042623A (en) * | 1998-01-12 | 2000-03-28 | Tokyo Electron Limited | Two-wafer loadlock wafer processing apparatus and loading and unloading method therefor |
JP2000306978A (ja) * | 1999-02-15 | 2000-11-02 | Kokusai Electric Co Ltd | 基板処理装置、基板搬送装置、および基板処理方法 |
US6558509B2 (en) * | 1999-11-30 | 2003-05-06 | Applied Materials, Inc. | Dual wafer load lock |
US6737826B2 (en) * | 2001-07-13 | 2004-05-18 | Brooks Automation, Inc. | Substrate transport apparatus with multiple independent end effectors |
JP2005277049A (ja) * | 2004-03-24 | 2005-10-06 | Tokyo Electron Ltd | 熱処理システム及び熱処理方法 |
JP4860167B2 (ja) * | 2005-03-30 | 2012-01-25 | 東京エレクトロン株式会社 | ロードロック装置,処理システム及び処理方法 |
KR100676823B1 (ko) * | 2005-07-23 | 2007-02-01 | 삼성전자주식회사 | 웨이퍼이송장치 및 그 이송방법 |
US7665951B2 (en) * | 2006-06-02 | 2010-02-23 | Applied Materials, Inc. | Multiple slot load lock chamber and method of operation |
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CN101855719B (zh) | 2012-06-06 |
CN101855719A (zh) | 2010-10-06 |
US20110000232A1 (en) | 2011-01-06 |
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JP2009206270A (ja) | 2009-09-10 |
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