JP5104192B2 - Heat treatment apparatus for resist coated substrate and heat treatment method thereof - Google Patents
Heat treatment apparatus for resist coated substrate and heat treatment method thereof Download PDFInfo
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Description
本発明は、レジスト塗布基板の熱処理装置基板及びその熱処理方法に関する。 The present invention relates to a heat treatment apparatus substrate for a resist-coated substrate and a heat treatment method therefor.
半導体装置、又はフォトマスク等の製造において、半導体用基板、フォトマスク用基板（以下基板と記す）等へ加熱処理する製造工程、特に基板に塗布したレジストが化学増幅型レジストを用いた場合、パターンの転写露光、又は描画後の加熱処理、例えばＰＥＢ（Ｐｏｓｔ Ｅｘｐｏｓｅｒ Ｂａｋｉｎｇ）は、その加熱処理後のレジスト感度、ひいてはレジスト形状、例えばレジスト線幅に多大な影響を与えるために、非常に重要である。 In the manufacture of semiconductor devices or photomasks, etc., a manufacturing process in which heat treatment is performed on a semiconductor substrate, a photomask substrate (hereinafter referred to as a substrate) or the like, particularly when the resist applied to the substrate uses a chemically amplified resist. The post-printing exposure or post-drawing heat treatment, such as PEB (Post Exposure Baking), is very important because it greatly affects the resist sensitivity after the heat treatment, and thus the resist shape, for example, the resist line width. .
半導体装置、又はフォトマスク等の製造におけるフォトリソグラフィ工程では、基板の表面に塗布されたレジスト液内の溶剤を蒸発させるための加熱処理（プリベーキング）や、該レジスト塗布基板（以下基板と記す）のパターンの露光後に、基板上の塗布膜、例えばレジスト膜の化学反応を促進させるための加熱処理（ＰＥＢ）現像後のレジスト固化処理等の種々の加熱処理が行われている。 In a photolithography process in manufacturing a semiconductor device, a photomask, or the like, heat treatment (pre-baking) for evaporating the solvent in the resist solution applied to the surface of the substrate, or the resist-coated substrate (hereinafter referred to as a substrate) After the exposure of the pattern, various heat treatments such as a resist solidification treatment after development of a heat treatment (PEB) for promoting a chemical reaction of a coating film on the substrate, for example, a resist film, are performed.
かかる加熱処理は、ＰＥＢ装置において行われ、基板が所定温度に熱せられた加熱部上に載置されることによって行われている。加熱部には、従来から、厚みのある板状の一体型のものが用いられており、加熱部内には、例えば熱源となるヒータ等が内蔵されている。また、基板の加熱処理は、通常５０℃〜１５０℃程度の範囲で、所定の時間での処理が行われている。 Such heat treatment is performed in the PEB apparatus, and is performed by placing the substrate on a heating unit heated to a predetermined temperature. Conventionally, a thick plate-like integral type is used for the heating unit, and a heater or the like serving as a heat source is built in the heating unit. Moreover, the heat processing of a board | substrate is the process for predetermined time normally in the range of about 50 to 150 degreeC.
近年、レジスト基板の多様化等が進むにつれ、基板をより高温、例えば１５０℃程度にまで均一温度で加熱する必要性が高まってきている。さらに、基板をより均一な温度に加熱することが重要となっている。均一な加熱処理という点で言えば、従来の加熱部をそのまま使用すると、加熱部からの熱が不均一に基板へ伝導されるため、基板が均一に加熱されず、基板上のレジスト自体が変質することが分かっている。このような基板の変質は、デバイス精度の低下を招き、歩留まりの低下の要因となり好ましくない。特に、近年、生産性の向上等の要請から基板が大型化される傾向にあり、基板へのより均一な加熱が要望され、その加熱装置、すなわち、基板の熱処理方法の改善が望まれている。 In recent years, with the diversification of resist substrates and the like, the necessity of heating the substrate to a higher temperature, for example, about 150 ° C., has increased. Furthermore, it is important to heat the substrate to a more uniform temperature. Speaking of uniform heat treatment, if the conventional heating unit is used as it is, the heat from the heating unit is conducted non-uniformly to the substrate, so the substrate is not heated uniformly and the resist on the substrate itself is altered. I know you will. Such alteration of the substrate causes a decrease in device accuracy, which is not preferable because it causes a decrease in yield. In particular, in recent years, there has been a tendency for substrates to become larger due to demands for improving productivity, etc., and more uniform heating to the substrates is desired, and improvement of the heating apparatus, that is, the substrate heat treatment method is desired. .
ここで、従来の半導体装置、又はフォトマスク等の製造におけるフォトリソグラフィ工程の一部分である、熱処理装置が搭載された塗布処理、及び現像処理のシステムの構成の概略を説明する。 Here, an outline of a system configuration of a coating process and a development process equipped with a heat treatment apparatus, which is a part of a photolithography process in manufacturing a conventional semiconductor device or a photomask, will be described.
図４は、従来のフォトマスクの製造におけるフォトリソグラフィ工程の一部分である、熱処理装置のＰＥＢ装置５０が搭載された塗布処理、及び現像処理のシステムの構成の一例の概略図を示す平面図である。 FIG. 4 is a plan view showing a schematic diagram of an example of a configuration of a coating processing and developing processing system on which a PEB device 50 of a heat treatment apparatus, which is a part of a photolithography process in manufacturing a conventional photomask, is mounted. .
従来の塗布処理、及び現像処理のシステムは、基板１を収納するカセット１０の単位で外部から塗布現像処理システムに搬入出する、カセット移載装置１１と、塗布処理、及び現像処理工程に搬入出する、枚葉式の処理を施す基板移載装置１２と、基板移載装置に隣接して設けられている露光装置４０との間で基板の受け渡しをする装置間移載装置１３とを一体に接続した構成を有している。 The conventional coating processing and development processing system includes a cassette transfer device 11 that carries in and out of the coating development processing system from the outside in units of a cassette 10 that accommodates the substrate 1, and carries in and out the coating processing and development processing steps. The inter-device transfer apparatus 13 that transfers the substrate between the substrate transfer apparatus 12 that performs the single wafer processing and the exposure apparatus 40 provided adjacent to the substrate transfer apparatus is integrated. It has a connected configuration.
塗布処理、及び現像処理システムは、基板上にレジスト液を塗布し、レジスト膜を形成するレジスト塗布処理装置２０と、露光後に基板を現像処理する現像処理装置３０とが配
置されている。
In the coating processing and development processing system, a resist coating processing device 20 that coats a resist solution on a substrate to form a resist film, and a development processing device 30 that develops the substrate after exposure are arranged.
図４に示すようにレジスト塗布処理装置２０では、基板を冷却処理する冷却装置２１、レジスト液中の溶剤を蒸発させるためのプリベーキング装置２２が配置されている。 As shown in FIG. 4, in the resist coating apparatus 20, a cooling apparatus 21 for cooling the substrate and a pre-baking apparatus 22 for evaporating the solvent in the resist solution are arranged.
現像処理装置３０では、現像処理後の加熱処理を施すポストベーキング装置３２、及びクーリング装置３３が配置されている。 In the development processing device 30, a post-baking device 32 that performs a heat treatment after the development processing and a cooling device 33 are disposed.
露光装置４０の近傍では、載置した基板を自然冷却させるクーリング装置２３、熱処理装置としてのポストエクスポージャーベーキング装置５０（以下、ＰＥＢ装置５０と記す）と、クーリング装置４３が配置されている。 In the vicinity of the exposure device 40, a cooling device 23 that naturally cools the placed substrate, a post-exposure baking device 50 (hereinafter referred to as a PEB device 50) as a heat treatment device, and a cooling device 43 are arranged.
次に、ＰＥＢ装置５０の構成について説明する。 Next, the configuration of the PEB apparatus 50 will be described.
図５は、従来のＰＥＢ装置を説明する部分側断面図である。図５に示すように、ＰＥＢ装置５０は、処理室５９を有し、当該室内に、前側に開閉動自在な扉体５８と、下側に熱処理する熱処理装置５７とを有している。 FIG. 5 is a partial side sectional view for explaining a conventional PEB apparatus. As shown in FIG. 5, the PEB apparatus 50 includes a processing chamber 59, and includes a door body 58 that can be opened and closed on the front side and a heat treatment apparatus 57 that performs heat treatment on the lower side.
処理室の頂上部には、排気部６７が設けられている。処理室内の雰囲気は排気部から排気される。 An exhaust part 67 is provided at the top of the processing chamber. The atmosphere in the processing chamber is exhausted from the exhaust unit.
一方、熱処理装置５７には、基板を載置して加熱する加熱部５２が設けられている。加熱部５２は、全体として薄い板状に形成されており、一枚の板状である。 On the other hand, the heat treatment apparatus 57 is provided with a heating unit 52 for placing and heating the substrate. The heating unit 52 is formed in a thin plate shape as a whole, and has a single plate shape.
熱処理装置５７は、一個の熱源５６を備え、温度を制御できる温度制御装置を有している。温度制御装置は、例えば、熱源となるヒータと、それぞれ電力を供給する電源と、各電源の電圧を制御する制御部と、加熱部５２の温度を検出する温度センサとを有している。 The heat treatment apparatus 57 includes a single heat source 56 and has a temperature control apparatus that can control the temperature. The temperature control device includes, for example, a heater serving as a heat source, a power source that supplies power, a control unit that controls the voltage of each power source, and a temperature sensor that detects the temperature of the heating unit 52.
以上のように構成されているＰＥＢ装置の効果、及び、塗布現像処理システムで行われるフォトリソグラフィ工程のプロセスを説明する。なお、図４、図５を参照して説明する。 The effects of the PEB apparatus configured as described above and the process of the photolithography process performed in the coating and developing treatment system will be described. This will be described with reference to FIGS.
フォトリソグラフィ工程のプロセスでは、最初、未処理の基板が１枚取り出され、基板は、冷却装置２１に搬送され、所定の温度に冷却される（図４参照）。 In the photolithography process, one unprocessed substrate is first taken out, and the substrate is transferred to the cooling device 21 and cooled to a predetermined temperature (see FIG. 4).
その後、レジスト塗布処理装置２０に搬送されてレジスト膜が形成される。レジスト膜が形成された基板は、プリベーキング装置２２、クーリング装置２３に順次搬送され、各装置で所定の処理がされる。 Thereafter, the resist film is transferred to the resist coating apparatus 20 to form a resist film. The substrate on which the resist film is formed is sequentially transferred to the pre-baking device 22 and the cooling device 23, and is subjected to predetermined processing in each device.
次いで、基板１は取り出され、露光装置４０に搬送される。露光処理の終了した基板は、ＰＥＢ装置５０に搬送される。ＰＥＢ装置において、所定の温度で熱処理の終了した基板は、クーリング装置４３に搬送され、各装置で所定の処理がされる。 Next, the substrate 1 is taken out and conveyed to the exposure apparatus 40. The substrate after the exposure processing is transferred to the PEB apparatus 50. In the PEB apparatus, the substrate that has been subjected to the heat treatment at a predetermined temperature is transferred to the cooling apparatus 43 and subjected to a predetermined process in each apparatus.
その後、現像処理装置３０に搬送される。現像処理された基板は、ポストベーキング装置３２、クーリング装置３３に順次搬送され、各装置において所定の処理が施される。その後、基板１は、カセット１０に戻され、一連のフォトリソグラフィ工程が終了する。 Thereafter, it is conveyed to the development processing apparatus 30. The developed substrate is sequentially transported to the post-baking device 32 and the cooling device 33, and predetermined processing is performed in each device. Thereafter, the substrate 1 is returned to the cassette 10, and a series of photolithography steps is completed.
従来技術の、ＰＥＢ装置の熱処理では、熱板５６は１個の熱源（例えば、ヒータ）で加熱されており、１個の熱源で加熱部５２の面内を加熱して、加熱部５２上に載置した基板
の面内の温度が均一になるように設定されている（図５参照）。
In the heat treatment of the PEB apparatus according to the prior art, the heat plate 56 is heated by one heat source (for example, a heater), and the surface of the heating unit 52 is heated by one heat source to be placed on the heating unit 52. The temperature in the surface of the mounted substrate is set to be uniform (see FIG. 5).
しかしながら、例えば化学増幅型レジストを用いた場合、ＰＥＢ処理での加熱処理の温度のバラツキがあると、レジストの現像処理でのレジスト寸法に影響する。 However, for example, when a chemically amplified resist is used, if the temperature of the heat treatment in the PEB process varies, the resist size in the resist development process is affected.
図７は、従来のレジスト塗布基板のＰＥＢの熱処理方法を説明する側断面図であり、（ａ）は、ＰＥＢの熱処理での温度が均一の場合であり、（ｂ）は、その温度が不均一の場合であり、露光後と、現像後を説明する側断面図である。 FIG. 7 is a side sectional view for explaining a conventional heat treatment method for PEB of a resist-coated substrate. FIG. 7A shows a case where the temperature in the heat treatment of PEB is uniform, and FIG. It is a case where it is uniform and is a sectional side view explaining after exposure and after development.
図７（ａ）は、ＰＥＢの熱処理での温度が均一の場合、基板面が温度Ｔ℃で均一に加熱処理された事例である。ａ１は、線幅Ｄμｍで露光処理後のレジスト８０である。ａ２では、ＰＥＢの熱処理後の露光部レジスト８０ａは、線幅Ｄ’μにレジスト感度を含めて維持されている。ａ３は、現像後のレジストであり、周辺部及び中央部ともにレジスト開口部は、線幅Ｄμｍで形成されている。 FIG. 7A shows an example in which the substrate surface is uniformly heated at a temperature T ° C. when the temperature in the heat treatment of PEB is uniform. a1 is the resist 80 after the exposure processing with a line width of D μm. In a <b> 2, the exposed portion resist 80 a after the heat treatment of PEB is maintained including the resist sensitivity in the line width D′ μ. a3 is a resist after development, and the resist opening is formed with a line width D μm in both the peripheral part and the central part.
図７（ｂ）は、ＰＥＢの熱処理での温度が不均一の場合であり、基板中央部が温度Ｔ℃、基板周辺部が温度Ｔ’℃で加熱処理された事例である。ｂ１は、線幅Ｄμｍで露光処理後のレジスト８０である。ＰＥＢの熱処理後の露光部レジスト８０ａは、線幅Ｄμｍ〜線幅ｄ’μｍと、レジスト感度にバラツキが発生している。すなわち、低温では、感度が上昇せずに、高温では感度が上昇する。ｂ２は、現像後のレジストであり、周辺部のレジスト開口部は、線幅ｄ’μｍで、中央部のレジスト開口部は、線幅Ｄμｍで形成されている。ｂ２では、温度分布のバラツキがレジスト開口部の寸法の変化をもたらしている。 FIG. 7B shows an example in which the temperature in the heat treatment of PEB is non-uniform, in which the center portion of the substrate is heat-treated at the temperature T ° C. and the peripheral portion of the substrate is heat-treated at the temperature T ′ ° C. b1 is the resist 80 after the exposure process with a line width of D μm. In the exposed portion resist 80a after the heat treatment of PEB, the resist sensitivity varies from a line width D μm to a line width d ′ μm. That is, the sensitivity does not increase at low temperatures, and the sensitivity increases at high temperatures. Reference numeral b2 denotes a developed resist, in which the peripheral resist opening is formed with a line width d ′ μm, and the central resist opening is formed with a line width D μm. In b2, the variation in temperature distribution causes a change in the dimension of the resist opening.
しかしながら、フォトリソグラフィ工程の露光、又は描画後の加熱処理、例えばＰＥＢで均一に処理しても、後工程である、例えばエッチング処理の製造工程では、基板の中央部と外周部の、パターンの形成密度等の影響によるエッチングレート差、例えば線幅の基板面内バラツキが発生する。すなわち、レジスト線幅が面内均一であっても、エッチングレート差の影響でエッチング線幅に面内バラツキが発生することがある。従って、この場合、レジスト線幅を微調整する補正が必要となる。 However, even if the heat treatment after exposure or lithography in the photolithography process is performed uniformly, for example, with PEB, in the subsequent process, for example, in the manufacturing process of the etching process, pattern formation is performed on the central portion and the outer peripheral portion of the substrate. Etching rate differences due to the influence of density and the like, for example, variations in the substrate width of the line width occur. That is, even if the resist line width is uniform in the plane, the in-plane variation may occur in the etching line width due to the influence of the etching rate difference. Therefore, in this case, correction for fine adjustment of the resist line width is required.
そこで、また別の従来技術では、例えば化学増幅型レジストを用いた場合、レジスト線幅を微調整する補正は、ＰＥＢの熱処理装置のうち、熱板の熱源を複数に分割し、各々分割した熱源毎に設定温度を微調整することにより、その各熱源の温度差を加減して、レジスト線幅を微調整する方法が提案されている。 Therefore, in another prior art, for example, when a chemically amplified resist is used, correction for fine adjustment of the resist line width is performed by dividing the heat source of the hot plate into a plurality of heat sources in the PEB heat treatment apparatus, There has been proposed a method of finely adjusting the resist line width by finely adjusting the set temperature every time to adjust the temperature difference between the heat sources.
熱板の熱源を複数に分割し、各々分割した熱板毎に設定温度を微調整する場合、熱源、その温度制御装置を複数設ける必要があり、その各熱源の境界での温度変化が急激となり、その隣り合う熱源の温度差が急激に変化するので、レジスト線幅を微調整するための加熱処理がかえって大きな温度差により微調整は難しくなる。 When the heat source of the heat plate is divided into a plurality of parts and the set temperature is finely adjusted for each divided heat plate, it is necessary to provide a plurality of heat sources and their temperature control devices, and the temperature change at the boundary of each heat source becomes abrupt. Since the temperature difference between the adjacent heat sources changes abruptly, the heat treatment for finely adjusting the resist line width becomes rather difficult to make fine adjustment due to the large temperature difference.
熱源を分割することにより、装置の維持、管理が、複雑となり、温度制御も複雑となる。 By dividing the heat source, the maintenance and management of the apparatus are complicated, and the temperature control is also complicated.
図６は、そのようなレジスト塗布基板の熱処理方法を説明するものであり、（ａ）は、加熱時の側断面図であり、（ｂ）は、加熱後の温度分布グラフである。 6A and 6B illustrate a heat treatment method for such a resist-coated substrate. FIG. 6A is a side cross-sectional view during heating, and FIG. 6B is a temperature distribution graph after heating.
図６（ａ）は、加熱時であり、中央部の熱源５６ｂ、５６ｃは１１０℃、周辺部の熱源５６ａ、５６ｄは１００℃に設定し、加熱する。加熱部５２では、中央部は表面温度が、例えばＴ℃となる。この状態で、基板１は加熱部５２上に載置して、所定の時間加熱、例えば中央部１００℃、周辺部９０℃、１０ｍｉｎの熱処理、ＰＥＢを実行する。 FIG. 6 (a) shows the heating, with the central heat sources 56b and 56c set to 110 ° C. and the peripheral heat sources 56a and 56d set to 100 ° C. for heating. In the heating part 52, the surface temperature of the central part is T ° C., for example. In this state, the substrate 1 is placed on the heating unit 52 and subjected to heating for a predetermined time, for example, heat treatment at the central part 100 ° C., peripheral part 90 ° C., 10 minutes, and PEB.
図６（ｂ）は、加熱後の温度分布を示すものであり、基板１の表面温度を実測した結果のグラフである。グラフでは、横軸は、基板の一方端部から他方端部であり、中央は、基板の中央部である。縦軸は実測温度であり、最高温度、Ｔ℃から最低温度、Ｔ’の温度範囲で示した。基板中央部は、温度Ｔ℃の近傍であり、周辺部は最低温度Ｔ’となる。また、グラフから読み取れるように、Ｔ℃〜Ｔ’℃の温度変化は、周辺部で急激に温度降下が発生しており、その急激な変化が問題となる。 FIG. 6B shows the temperature distribution after heating, and is a graph showing the results of actual measurement of the surface temperature of the substrate 1. In the graph, the horizontal axis is from one end of the substrate to the other end, and the center is the central portion of the substrate. The vertical axis represents the actually measured temperature, and is shown in the temperature range from the maximum temperature, T ° C. to the minimum temperature, T ′. The central part of the substrate is in the vicinity of the temperature T ° C., and the peripheral part has the lowest temperature T ′. Further, as can be seen from the graph, the temperature change from T ° C. to T ′ ° C. has a rapid temperature drop in the peripheral portion, and the rapid change becomes a problem.
以下に公知文献を記す。
本発明の課題は、装置の維持及び管理が、複雑とならず、温度制御でも簡単なレジスト塗布基板の熱処理方法であって、熱源から加熱する熱板の温度分布は、急激な温度変化を伴わず、ＰＥＢの面内温度分布を任意に変更するための、レジスト塗布基板の熱処理方法及びそのための熱処理装置を提供することである。 An object of the present invention is a heat treatment method for a resist-coated substrate in which maintenance and management of the apparatus are not complicated and temperature control is simple, and the temperature distribution of a hot plate heated from a heat source is accompanied by a rapid temperature change. First, it is to provide a heat treatment method for a resist-coated substrate and a heat treatment apparatus therefor for arbitrarily changing the in-plane temperature distribution of PEB.
本発明によるレジスト塗布基板の熱処理装置は、
レジスト塗布基板を加熱する加熱部を有し、一個の熱源で加熱された加熱部は、複数の、中央部分と当該部分の外方の端部分とに分割され、
前記複数の加熱部の上方位置には、ステンレス、アルミニウム、もしくは少なくともその１つを含む合金、又はセラミックから材質が選択される、一枚の板状の熱伝導性を有する上板が設けられ、
分割された前記加熱部の各々には、レジスト塗布基板が載置される前記上板に対する上下方向の昇降機構が設けられ、
各々の加熱部の高さ位置を微調整することにより、レジスト塗布基板面内のエッチングレートの変化に従って設定した温度分布を緩やかに調整し、レジスト開口部の寸法を加減することで、レジスト塗布基板面内でのレジスト感度を補正する機能を有することを特徴とする。
A heat treatment apparatus for a resist-coated substrate according to the present invention comprises:
A heating unit that heats the resist-coated substrate and is heated by a single heat source is divided into a plurality of central portions and outer end portions of the portions,
In the upper position of the plurality of heating units, a single plate-like heat conductive upper plate is provided in which the material is selected from stainless steel, aluminum, an alloy containing at least one of them, or ceramic,
Each of the divided heating units is provided with a vertical lifting mechanism with respect to the upper plate on which a resist coating substrate is placed,
By finely adjusting the height position of each heating part, the temperature distribution set according to the change in the etching rate in the resist-coated substrate surface is gently adjusted, and the dimensions of the resist opening are adjusted to adjust the resist-coated substrate. It has a function of correcting the resist sensitivity in the plane.
本発明によるレジスト塗布基板の熱処理装置を用いた熱処理方法は、
前記上板の面内の温度変化を、分割された前記加熱部の中央部あるいは端部を昇降させ、各々の加熱部の前記上板との間隙を調整することにより、基板面内のエッチングレートの変化に従って設定した温度分布を緩やかに調整し、レジスト開口部の寸法を加減することで、露光処理後のレジスト感度を補正することを特徴とする。
A heat treatment method using a heat treatment apparatus for a resist-coated substrate according to the present invention is as follows:
The temperature change in the surface of the upper plate is moved up and down at the center or end of the divided heating unit, and the gap between the heating unit and the upper plate is adjusted, thereby adjusting the etching rate in the substrate surface. The resist sensitivity after the exposure processing is corrected by gently adjusting the temperature distribution set according to the change of the above and adjusting the size of the resist opening.
本発明のレジスト塗布基板の熱処理方法及びそのための熱処理装置を用いれば、複数の昇降機構を具備した加熱部による熱処理方法であるめに、基板面内の温度分布を最適状態に調整することができ、且つ基板面内の温度変化が緩やかとなるために、予めレジスト感度を補正することによりレジスト幅を最適幅にすることができ、また、ドライエッチング後の線幅の寸法バラツキを制御することにより、線幅の面内バラツキを縮小することができる。 If the heat treatment method for a resist-coated substrate and the heat treatment apparatus therefor according to the present invention are used, the temperature distribution in the substrate surface can be adjusted to an optimum state because it is a heat treatment method using a heating unit having a plurality of lifting mechanisms. In addition, since the temperature change in the substrate surface becomes gradual, the resist width can be optimized by correcting the resist sensitivity in advance, and by controlling the dimensional variation of the line width after dry etching. In-plane variation in line width can be reduced.
本発明のレジスト塗布基板の熱処理方法及びそのための熱処理装置を用いれば、複数の昇降機構を具備した加熱部、その上方に上板を装備した構造の熱処理方法であるために、上板と加熱部との間隔を昇降機構により変化させることにより、容易に、多くの温度分布に変更することができ、且つ基板面内の温度変化が緩やかとなるために、予めレジスト感度を補正することによりレジスト幅を最適幅にすることができ、また、ドライエッチング後の線幅の寸法バラツキを制御することにより、線幅の面内バラツキを縮小することができる。 If the heat treatment method for a resist-coated substrate and the heat treatment apparatus therefor according to the present invention are used, a heating part having a plurality of elevating mechanisms, and a heat treatment method having a structure equipped with an upper plate above the heating part, the upper plate and the heating part Can be easily changed to a large temperature distribution, and the temperature change in the substrate surface becomes gradual, so that the resist width can be corrected by correcting the resist sensitivity in advance. Can be made the optimum width, and the line width variation in the plane can be reduced by controlling the line width variation after dry etching.
本発明のレジスト塗布基板の熱処理方法及びそのための熱処理装置を用いれば、複数の昇降機構を具備した加熱部、その上方に上板を装備した構造の熱処理方法であるために、上板と加熱部との間隔を昇降機構により変化させることにより、容易に、多くの温度分布に変更することができるために、加熱部の熱源温度を一定とすることができ、ユニット化が容易となり、その操作も単純化され、装置の運用効率は大幅に改善できる効果がある。 If the heat treatment method for a resist-coated substrate and the heat treatment apparatus therefor according to the present invention are used, a heating part having a plurality of elevating mechanisms, and a heat treatment method having a structure equipped with an upper plate above the heating part, the upper plate and the heating part Can be easily changed to a large number of temperature distributions by changing the distance to the elevating mechanism, so that the temperature of the heat source of the heating unit can be kept constant, making unitization easy, and its operation also This simplifies the operation efficiency of the apparatus.
本発明のレジスト塗布基板の熱処理装置及びその熱処理方法を一実施形態に基づいて以下に説明する。 A heat treatment apparatus and a heat treatment method for a resist-coated substrate according to the present invention will be described below based on an embodiment.
図１は、本発明のレジスト塗布基板の熱処理に用いる熱処理装置の一実施例の側断面図であり、（ａ）下側のみ熱処理装置を有するもの、（ｂ）は、上下両側に熱処理装置を有するものである。 FIG. 1 is a side sectional view of an embodiment of a heat treatment apparatus used for heat treatment of a resist-coated substrate of the present invention. (A) The heat treatment apparatus is provided only on the lower side, and (b) is a heat treatment apparatus on both upper and lower sides. I have it.
図１（ａ）〜（ｂ）は、本発明のレジスト塗布基板の熱処理装置であり、レジスト塗布基板を加熱する熱処理装置である。レジスト塗布基板の熱処理装置は、レジスト塗布基板を加熱する加熱部２を有し、一個の熱源６で加熱された加熱部２は、例えば、複数の、中央部分２ｂ、２ｃと当該部分の外方の端部分２ａ、２ｄとに分割した構造であり、各々の加熱部２ａ、２ｂ、２ｃ、２ｄに切り離されている。 FIG. 1A to FIG. 1B are heat treatment apparatuses for a resist-coated substrate according to the present invention, which are heat treatment apparatuses for heating a resist-coated substrate. The heat treatment apparatus for the resist coated substrate has a heating unit 2 for heating the resist coated substrate, and the heating unit 2 heated by one heat source 6 includes, for example, a plurality of central portions 2b and 2c and an outer side of the portion. It is the structure divided | segmented into the edge parts 2a and 2d, and it is cut | disconnected by each heating part 2a, 2b, 2c, 2d.
前記複数の加熱部２ａ〜２ｄは、その上方位置に、一枚の板状の、熱伝導性を有する上板を設けており、該上板を介して載置したレジスト基板を加熱処理することを特徴とする。 The plurality of heating units 2a to 2d are provided with a single plate-like heat conductive upper plate at an upper position thereof, and heat-treat the resist substrate placed through the upper plate. It is characterized by.
前記分割された各々加熱部２ａ、２ｂ、２ｃ、２ｄは、各々が上、もしくは下方向へ加
熱部を昇降させる昇降機構４を備えており、上板と加熱部の間隔を変更して、上板の温度を微調整することが可能である。
Each of the divided heating units 2a, 2b, 2c, and 2d includes an elevating mechanism 4 that moves the heating unit up and down, and changes the interval between the upper plate and the heating unit. It is possible to finely adjust the temperature of the plate.
前記上板３は、その材質がステンレス、アルミニウム、もしくは少なくともその１つを含む合金、又はセラミックである。 The upper plate 3 is made of stainless steel, aluminum, an alloy containing at least one of them, or ceramic.
前記加熱部は、その内部に冷却用の気体、若しくは液体を通す冷却用配管５を設けてなる。 The heating unit is provided with a cooling pipe 5 through which a cooling gas or liquid passes.
前記気体は、窒素、ヘリウム、若しくはその混合体である。 The gas is nitrogen, helium, or a mixture thereof.
図１（ｂ）は、本発明のレジスト塗布基板の熱処理装置であって、上板３の上に載置したレジスト基板１の上方で、該基板と向き合うように加熱部２及び昇降機構４を付設して、レジスト基板１を下方及び上方の加熱部２から加熱処理をする本発明のレジスト塗布基板の熱処理装置である。 FIG. 1B shows a heat treatment apparatus for a resist-coated substrate according to the present invention, in which a heating unit 2 and an elevating mechanism 4 are disposed above a resist substrate 1 placed on an upper plate 3 so as to face the substrate. It is the heat processing apparatus of the resist coating substrate of this invention which attaches and heat-processes the resist substrate 1 from the heating part 2 of the downward direction and the upper direction.
図２は、本発明のレジスト塗布基板の熱処理方法の一実施例を説明する概念図であり、（ａ）は、加熱時の側断面図であり、（ｂ）は、その加熱部の上面図であり、（ｃ）は、加熱時の上板の温度の実測値のグラフである。 FIG. 2 is a conceptual diagram for explaining an embodiment of a heat treatment method for a resist-coated substrate according to the present invention, (a) is a side sectional view at the time of heating, and (b) is a top view of the heating portion. (C) is a graph of measured values of the temperature of the upper plate during heating.
図２（ａ）〜（ｃ）に示す本発明のレジスト塗布基板の熱処理装置を用いたレジスト塗布基板の熱処理方法について説明する。図２（ａ）では、レジスト塗布基板１は、一枚の板状の、熱伝導性を有する上板３上に載置する。次いで、一個の熱源６で加熱された加熱部２ａ、２ｄと、２ｂ、２ｃは、中央部分の加熱部２ｂ、２ｃと、当該部分の外方の端部分の加熱部２ａ、２ｄに分割されている。中央部分の加熱部２ｂ、２ｃは、昇降機構により、上昇させ、端部分の加熱部２ａ、２ｄは、昇降機構により、下降させる。上板に近接した中央部分は高めの温度で安定させ、上板と離れた端部分は、低めの温度で安定させながら、上板の面内の温度分布を最適温度に変更する。すなわち、中央近傍から端部まで緩やかな温度変化をもっており、該上板の急激な温度変化を低減させつつレジスト塗布基板を加熱するレジスト塗布基板の熱処理方法である。 A resist-coated substrate heat treatment method using the resist-coated substrate heat treatment apparatus of the present invention shown in FIGS. 2A to 2C will be described. In FIG. 2A, the resist-coated substrate 1 is placed on a single plate-like upper plate 3 having thermal conductivity. Next, the heating units 2a, 2d, 2b, and 2c heated by a single heat source 6 are divided into heating units 2b and 2c at the central portion and heating units 2a and 2d at the outer end portions of the portions. Yes. The heating parts 2b and 2c at the central part are raised by the lifting mechanism, and the heating parts 2a and 2d at the end parts are lowered by the lifting mechanism. The central portion adjacent to the upper plate is stabilized at a higher temperature, and the end portion away from the upper plate is stabilized at a lower temperature, and the temperature distribution in the surface of the upper plate is changed to the optimum temperature. In other words, this is a method for heat-treating a resist-coated substrate, which has a gradual temperature change from the vicinity of the center to the end portion and heats the resist-coated substrate while reducing the rapid temperature change of the upper plate.
図２（ｂ）では、加熱部２ｂ、２ｃは、１１０℃、端部分の加熱部２ａ、２ｄも１１０℃に設定した。次いで、上板の面内の温度変化を中央部と、端部との温度差、例えば１．５℃に設定した場合、端部分の加熱部２ａ、２ｄを降下させながら、１．５℃の温度が低下する位置まで上板と各々の加熱部との間隙を広げながら、各々の加熱部の高さ位置を微調整した。 In FIG.2 (b), the heating parts 2b and 2c were set to 110 degreeC, and the heating parts 2a and 2d of the edge part were also set to 110 degreeC. Next, when the temperature change in the surface of the upper plate is set to a temperature difference between the center portion and the end portion, for example, 1.5 ° C., the heating portion 2a, 2d at the end portion is lowered while the temperature change is 1.5 ° C. The height position of each heating unit was finely adjusted while widening the gap between the upper plate and each heating unit to a position where the temperature decreased.
図２（ｃ）のグラフでは、上限温度８は加熱部２ｂ、２ｃの上板温度であり、下限温度９は端部分の加熱部２ａ、２ｄである。グラフの縦軸は温度であり、グラフの横軸は上板の面内位置である。上板の面内の温度変化を中央部と端部との温度差７、例えばΔＴに設定した場合、上限温度は、加熱部２の設定温度を加減させて発現し、加減温度は、昇降機構４により端部分の加熱部２ａ、２ｄを降下させながら、ΔＴ℃の温度が低下する位置まで上板と各々の加熱部２ａ、２ｄとの間隙を広げながら、各々の加熱部の高さ位置を微調整した。図２（ｃ）のグラフでは、上板中央が上限温度となり、基板両端方向へ離れるごとに徐々に温度が低くなり、緩やかな温度の変化で上板両端が下限温度となる。 In the graph of FIG. 2C, the upper limit temperature 8 is the upper plate temperature of the heating parts 2b and 2c, and the lower limit temperature 9 is the heating parts 2a and 2d at the end portions. The vertical axis of the graph is temperature, and the horizontal axis of the graph is the in-plane position of the upper plate. When the temperature change in the surface of the upper plate is set to a temperature difference 7 between the central portion and the end portion, for example, ΔT, the upper limit temperature is expressed by adjusting the set temperature of the heating unit 2, and the adjusting temperature is the lifting mechanism. 4. While lowering the heating portions 2a and 2d at the end portion by 4, widen the gap between the upper plate and each heating portion 2a and 2d to a position where the temperature of ΔT ° C. decreases, the height position of each heating portion is adjusted. Tweaked. In the graph of FIG. 2 (c), the center of the upper plate becomes the upper limit temperature, and the temperature gradually decreases as it moves away from both ends of the substrate, and both ends of the upper plate become the lower limit temperature due to a gradual change in temperature.
本発明のレジスト塗布基板の熱処理方法では、複数の、昇降機構を具備した加熱部による熱処理方法のために、基板面内の温度分布を最適状態に変更することができる。基板面内の温度変化が緩やかとなるために、予めレジスト感度を補正するＰＥＢの加熱処理には最適な方法である。 In the heat treatment method for a resist-coated substrate according to the present invention, the temperature distribution in the substrate surface can be changed to an optimum state because of the heat treatment method using a plurality of heating units having lifting mechanisms. Since the temperature change in the substrate surface becomes gentle, this is an optimum method for the heat treatment of PEB for correcting the resist sensitivity in advance.
本発明のレジスト塗布基板の熱処理方法では、露光処理後のレジスト感度を補正することによりレジスト幅を最適幅にすることができ、ドライエッチング後の線幅の寸法バラツキを制御し、寸法の面内バラツキを縮小することができる。 In the heat treatment method for a resist-coated substrate of the present invention, the resist width can be optimized by correcting the resist sensitivity after the exposure process, and the dimensional variation of the line width after dry etching is controlled, and the in-plane dimension Variations can be reduced.
例えば、基板の端部は、エッチングレートが速い場合であっても、端部の加熱温度を変更、中央部の温度より低温側に微調整してＰＥＢの加熱処理を行うことにより、レジスト幅を変化させる、すなわち、レジスト幅を太く形成することにより、エッチングレートを補正する。すなわち、端部では、エッチングレートが速い分だけエッチング開口部が太るため、予めレジスト開口部をその分だけ狭めて形成する。そのレジスト開口部の寸法を加減する方法が本発明のレジスト塗布基板の熱処理方法であり、レジスト開口部の寸法は、基板面内のエッチングレートの変化を補正するためのＰＥＢの加熱処理により基板面内の温度分布が微調整される。 For example, the edge width of the substrate can be changed by changing the heating temperature at the edge and finely adjusting the temperature lower than the temperature at the center to heat the PEB. The etching rate is corrected by changing, that is, by forming the resist width thick. That is, at the end portion, the etching opening is thicker by the higher etching rate, so the resist opening is narrowed in advance by that amount. The method of adjusting the size of the resist opening is the heat treatment method for the resist-coated substrate of the present invention. The size of the resist opening is adjusted by heating the PEB to correct the etching rate change in the substrate surface. The temperature distribution inside is fine-tuned.
図３は、本発明のレジスト塗布基板の熱処理方法を説明する側断面図である。図３（ａ）は、露光処理後の基板であり、（ｂ）は、ＰＥＢ処理で、（ｃ）は、現像後で、（ｄ）は、エッチング後の基板である。 FIG. 3 is a side sectional view for explaining the heat treatment method of the resist coated substrate of the present invention. 3A shows the substrate after the exposure processing, FIG. 3B shows the PEB processing, FIG. 3C shows the substrate after development, and FIG. 3D shows the substrate after etching.
図３（ａ）は、遮光膜８１上に化学増幅型レジスト８０が形成され、該レジストには、露光処理された露光レジスト部８０ａが形成されている。露光レジスト部８０ａは同じ寸法、例えばＤである。次いで、（ｂ）では、本発明のＰＥＢの加熱処理されており、端部では、加熱部２と上板３との間隔は広く、中央は、近接し、加熱温度を微調整している。この加熱処理では、中央は感度が若干高くなり、端部は若干低くなり、現像処理でのレジスト寸法が変化する。次いで、（ｃ）では、現像処理後の基板であり、レジスト開口部の寸法は、中央はＤで、端部はＤ’と若干小さくなる。次いで、（ｄ）では、遮光膜のエッチング後であり、端部は、エッチングレートが速い分だけエッチング幅が大きくなり、遮光膜開口部の寸法がＤとなる。面内での加熱温度の微調整は、加熱部の高さを調整することであり、その温度調整方法は容易で、且つ簡単な方法である。 In FIG. 3A, a chemically amplified resist 80 is formed on the light shielding film 81, and an exposed resist portion 80a subjected to exposure processing is formed on the resist. The exposure resist portion 80a has the same size, for example, D. Next, in (b), the heat treatment of the PEB of the present invention is performed. At the end, the distance between the heating unit 2 and the upper plate 3 is wide, the center is close, and the heating temperature is finely adjusted. In this heat treatment, the sensitivity is slightly higher at the center and the edges are slightly lower, and the resist dimensions in the development process change. Next, (c) is a substrate after development processing, and the dimension of the resist opening is slightly smaller at the center with D and at the end with D '. Next, in (d), after the light shielding film is etched, the edge has an etching width that is increased by the higher etching rate, and the dimension of the light shielding film opening is D. The fine adjustment of the heating temperature in the plane is to adjust the height of the heating section, and the temperature adjustment method is easy and simple.
１…レジスト基板
２…加熱部
３…上板
４…昇降機構
５…冷却用配管
６…熱源
７…温度差
８…上限温度
９…下限温度
１０…カセット
１１…カセット移載装置
１２…基板移載装置
１３…装置間移載装置
２０…レジスト塗布処理装置
２１…冷却装置
２２…プリベーキング
２３…クーリング装置
３０…現像処理装置
３２…ポストベーキング装置
３３…クーリング装置
４０…露光装置
４３…クーリング装置
５０…ＰＥＢ装置
５２…加熱部
５６…熱源
５７…熱処理装置
５８…扉体
６７…排気部
８０…（化学増幅型の）レジスト
８０ａ…露光部レジスト
８１…遮光膜
８２…レジスト開口部
DESCRIPTION OF SYMBOLS 1 ... Resist substrate 2 ... Heating part 3 ... Upper plate 4 ... Elevating mechanism 5 ... Cooling pipe 6 ... Heat source 7 ... Temperature difference 8 ... Upper limit temperature 9 ... Lower limit temperature 10 ... Cassette 11 ... Cassette transfer device 12 ... Substrate transfer Apparatus 13 ... Transfer apparatus 20 ... Resist coating apparatus 21 ... Cooling apparatus 22 ... Prebaking 23 ... Cooling apparatus 30 ... Development processing apparatus 32 ... Post baking apparatus 33 ... Cooling apparatus 40 ... Exposure apparatus 43 ... Cooling apparatus 50 ... PEB device 52 ... heating unit 56 ... heat source 57 ... heat treatment device 58 ... door body 67 ... exhaust unit 80 ... (chemically amplified) resist 80a ... exposed portion resist 81 ... light shielding film 82 ... resist opening
Claims (5)
レジスト塗布基板を加熱する加熱部を有し、一個の熱源で加熱された加熱部は、複数の、中央部分と当該部分の外方の端部分とに分割され、
前記複数の加熱部の上方位置には、ステンレス、アルミニウム、もしくは少なくともその１つを含む合金、又はセラミックから材質が選択される、一枚の板状の熱伝導性を有する上板が設けられ、
分割された前記加熱部の各々には、レジスト塗布基板が載置される前記上板に対する上下方向の昇降機構が設けられ、
各々の加熱部の高さ位置を微調整することにより、レジスト塗布基板面内のエッチングレートの変化に従って設定した温度分布を緩やかに調整し、レジスト開口部の寸法を加減することで、レジスト塗布基板面内でのレジスト感度を補正する機能を有することを特徴とするレジスト塗布基板の熱処理装置。 A heat treatment apparatus for a resist-coated substrate,
A heating unit that heats the resist-coated substrate and is heated by a single heat source is divided into a plurality of central portions and outer end portions of the portions ,
In the upper position of the plurality of heating units, a single plate-like heat conductive upper plate is provided in which the material is selected from stainless steel, aluminum, an alloy containing at least one of them, or ceramic,
Each of the divided heating units is provided with a vertical lifting mechanism with respect to the upper plate on which a resist coating substrate is placed,
By finely adjusting the height position of each heating part, the temperature distribution set according to the change in the etching rate in the resist-coated substrate surface is gently adjusted, and the dimensions of the resist opening are adjusted to adjust the resist-coated substrate. A resist-coated substrate heat treatment apparatus characterized by having a function of correcting in-plane resist sensitivity .
前記上板の面内の温度変化を、分割された前記加熱部の中央部あるいは端部を昇降させ、各々の加熱部の前記上板との間隙を調整することにより、基板面内のエッチングレートの変化に従って設定した温度分布を緩やかに調整し、レジスト開口部の寸法を加減することで、露光処理後のレジスト感度を補正することを特徴とするレジスト塗布基板の熱処理方法。 A heat treatment method using the heat treatment apparatus of the resist coating a substrate according to any one of claims 1 to 4,
The temperature change in the surface of the upper plate is moved up and down at the center or end of the divided heating unit, and the gap between the heating unit and the upper plate is adjusted, thereby adjusting the etching rate in the substrate surface. A method for heat-treating a resist-coated substrate, wherein the resist sensitivity after the exposure processing is corrected by gently adjusting the temperature distribution set according to the change in the size and adjusting the size of the resist opening .
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| JP5314461B2 (en) * | 2009-03-10 | 2013-10-16 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
| JP2016145649A (en) * | 2013-05-27 | 2016-08-12 | コニカミノルタ株式会社 | Drying apparatus and drying method |
| CN104596231A (en) * | 2015-01-04 | 2015-05-06 | 丹阳市开发区晶鼎电热设备厂 | Plug-pull type electrothermal film microcrystalline plate oven |
| JP6994424B2 (en) * | 2018-04-17 | 2022-01-14 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method, and storage medium |
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| JPS63184330A (en) * | 1987-01-26 | 1988-07-29 | Nec Corp | Baking device for photoresist |
| JPH11274030A (en) * | 1998-03-20 | 1999-10-08 | Hitachi Ltd | Method and device for resist processing, and method for coating resist |
| JPH11272342A (en) * | 1998-03-24 | 1999-10-08 | Dainippon Screen Mfg Co Ltd | Device and method for heat treatment of substrate |
| JP3605550B2 (en) * | 1999-07-19 | 2004-12-22 | 東京エレクトロン株式会社 | Substrate heat treatment apparatus and temperature control method |
| US6576572B2 (en) * | 2000-12-28 | 2003-06-10 | Schott Lithotec Ag | Method of heating a substrate using a variable surface hot plate for improved bake uniformity |
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| JP4666474B2 (en) * | 2005-05-17 | 2011-04-06 | 大日本スクリーン製造株式会社 | Heat treatment equipment |
| JP2007208066A (en) * | 2006-02-02 | 2007-08-16 | Dainippon Screen Mfg Co Ltd | Substrate heat treatment apparatus |
| JP2007250313A (en) * | 2006-03-15 | 2007-09-27 | Sumitomo Electric Ind Ltd | Heater unit for manufacturing and inspecting semiconductor and flat display panel, and device equipped with it |
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