JP5086432B2 - ゲッタシステムを含む白色または紫外ｌｅｄ - Google Patents

ゲッタシステムを含む白色または紫外ｌｅｄ Download PDF

Info

Publication number: JP5086432B2
Authority: JP; Japan
Prior art keywords: led; substrate; getter; cap; space
Prior art date: 2007-06-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2010512654A

Other languages

English (en)

Japanese (ja)

Other versions

JP2010530625A (ja

Inventor

カーレッティ，コラード

ジャンナントニオ，ロベルト

ロンデナ，セルジオ

Original Assignee

サエスゲッターズソチエタペルアツィオニ

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-06-20

Filing date

2008-06-13

Publication date

2012-11-28

2008-06-13 Application filed by サエスゲッターズソチエタペルアツィオニ filed Critical サエスゲッターズソチエタペルアツィオニ

2010-09-09 Publication of JP2010530625A publication Critical patent/JP2010530625A/ja

2012-11-28 Application granted granted Critical

2012-11-28 Publication of JP5086432B2 publication Critical patent/JP5086432B2/ja

Status Expired - Fee Related legal-status Critical Current

2028-06-13 Anticipated expiration legal-status Critical

Links

239000000463 material Substances 0.000 claims abstract description 40
229910052751 metal Inorganic materials 0.000 claims description 31
239000002184 metal Substances 0.000 claims description 31
239000000758 substrate Substances 0.000 claims description 20
239000011521 glass Substances 0.000 claims description 15
239000004065 semiconductor Substances 0.000 claims description 12
230000008021 deposition Effects 0.000 claims description 10
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
238000003466 welding Methods 0.000 claims description 5
239000011261 inert gas Substances 0.000 claims description 3
238000000151 deposition Methods 0.000 description 9
229910045601 alloy Inorganic materials 0.000 description 5
239000000956 alloy Substances 0.000 description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
239000007789 gas Substances 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 3
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
238000005219 brazing Methods 0.000 description 2
239000003086 colorant Substances 0.000 description 2
238000005520 cutting process Methods 0.000 description 2
-1 for example Substances 0.000 description 2
229910000833 kovar Inorganic materials 0.000 description 2
239000010936 titanium Substances 0.000 description 2
229910052719 titanium Inorganic materials 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
229910052726 zirconium Inorganic materials 0.000 description 2
PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
229910002601 GaN Inorganic materials 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
229910000760 Hardened steel Inorganic materials 0.000 description 1
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
239000011149 active material Substances 0.000 description 1
229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
229910052788 barium Inorganic materials 0.000 description 1
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
229910052791 calcium Inorganic materials 0.000 description 1
239000011575 calcium Substances 0.000 description 1
BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
239000000292 calcium oxide Substances 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
229910010293 ceramic material Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
238000005097 cold rolling Methods 0.000 description 1
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000010408 film Substances 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
239000011777 magnesium Substances 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
229910001092 metal group alloy Inorganic materials 0.000 description 1
239000007769 metal material Substances 0.000 description 1
238000000034 method Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
239000010955 niobium Substances 0.000 description 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
238000010943 off-gassing Methods 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
238000003825 pressing Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
229910052761 rare earth metal Inorganic materials 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
238000007789 sealing Methods 0.000 description 1
239000002904 solvent Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000010959 steel Substances 0.000 description 1
229910052712 strontium Inorganic materials 0.000 description 1
CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
239000000126 substance Substances 0.000 description 1
238000007736 thin film deposition technique Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Power Engineering (AREA)
Led Device Packages (AREA)

JP2010512654A 2007-06-20 2008-06-13 ゲッタシステムを含む白色または紫外ｌｅｄ Expired - Fee Related JP5086432B2 (ja)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
IT001238A ITMI20071238A1 (it)	2007-06-20	2007-06-20	Led bianchi o ultravioletti contenenti un sistema getter
ITMI2007A001238		2007-06-20
PCT/EP2008/057483 WO2008155295A1 (en)	2007-06-20	2008-06-13	White or ultraviolet leds containing a getter system

Publications (2)

Publication Number	Publication Date
JP2010530625A JP2010530625A (ja)	2010-09-09
JP5086432B2 true JP5086432B2 (ja)	2012-11-28

Family

ID=39672629

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2010512654A Expired - Fee Related JP5086432B2 (ja)	2007-06-20	2008-06-13	ゲッタシステムを含む白色または紫外ｌｅｄ

Country Status (8)

Country	Link
US (1)	US8278675B2 (de)
EP (1)	EP2171774B1 (de)
JP (1)	JP5086432B2 (de)
KR (1)	KR20100029222A (de)
CN (1)	CN101689589B (de)
AT (1)	ATE542247T1 (de)
IT (1)	ITMI20071238A1 (de)
WO (1)	WO2008155295A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
ITMI20071238A1 (it) *	2007-06-20	2008-12-21	Getters Spa	Led bianchi o ultravioletti contenenti un sistema getter
US8212469B2 (en)	2010-02-01	2012-07-03	Abl Ip Holding Llc	Lamp using solid state source and doped semiconductor nanophosphor
US8021008B2 (en)	2008-05-27	2011-09-20	Abl Ip Holding Llc	Solid state lighting using quantum dots in a liquid
US9719012B2 (en)	2010-02-01	2017-08-01	Abl Ip Holding Llc	Tubular lighting products using solid state source and semiconductor nanophosphor, E.G. for florescent tube replacement
CN103154186B (zh)	2010-09-28	2015-07-01	皇家飞利浦电子股份有限公司	具有有机磷光体的发光装置
BR112013006778A2 (pt)	2010-09-28	2019-09-24	Koninklijke Philips Eletronics N V	"disposição emissora de luz"
KR20160038325A (ko) *	2014-09-30	2016-04-07	코닝정밀소재 주식회사	색변환용 기판, 그 제조방법 및 이를 포함하는 디스플레이 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5661761A (en)	1979-10-24	1981-05-27	Toshiba Corp	Metal-vapor electric-discharge lamp
JPS6326964U (de) *	1986-08-05	1988-02-22
JPH02236931A (ja) *	1989-03-08	1990-09-19	Toshiba Corp	フラッシュゲッター装置
JPH05343812A (ja)	1992-06-12	1993-12-24	Kubota Corp	半導体装置
IT1283484B1 (it)	1996-07-23	1998-04-21	Getters Spa	Metodo per la produzione di strati sottili supportati di materiale getter non-evaporabile e dispositivi getter cosi' prodotti
TW200507924A (en)	2003-02-17	2005-03-01	Getters Spa	Composition and devices for gas sorption and process for their manufacturing
JP2004352928A (ja)	2003-05-30	2004-12-16	Mitsubishi Chemicals Corp	発光装置及び照明装置
JP4865998B2 (ja) *	2003-11-20	2012-02-01	パナソニック株式会社	光源、光ピックアップ装置、および電子機器
US7407421B2 (en)	2003-11-20	2008-08-05	Matsushita Electric Industrial Co., Ltd.	Light source, optical pickup, and electronic apparatus
US7560820B2 (en)	2004-04-15	2009-07-14	Saes Getters S.P.A.	Integrated getter for vacuum or inert gas packaged LEDs
ITMI20051502A1 (it)	2005-07-29	2007-01-30	Getters Spa	Sistemi getter comprendenti uno o piu' depositi di materiale getter ed uno strato di materiale per il trasporto di h02o
KR100747325B1 (ko)	2006-05-01	2007-08-07	엘지전자 주식회사	전계 발광 소자
JP2008010518A (ja) *	2006-06-27	2008-01-17	Citizen Holdings Co Ltd	蛍光発光装置
ITMI20071238A1 (it) *	2007-06-20	2008-12-21	Getters Spa	Led bianchi o ultravioletti contenenti un sistema getter

2007
- 2007-06-20 IT IT001238A patent/ITMI20071238A1/it unknown
2008
- 2008-06-13 EP EP08802909A patent/EP2171774B1/de not_active Not-in-force
- 2008-06-13 US US12/602,585 patent/US8278675B2/en active Active
- 2008-06-13 CN CN200880020690XA patent/CN101689589B/zh not_active Expired - Fee Related
- 2008-06-13 AT AT08802909T patent/ATE542247T1/de active
- 2008-06-13 WO PCT/EP2008/057483 patent/WO2008155295A1/en active Application Filing
- 2008-06-13 JP JP2010512654A patent/JP5086432B2/ja not_active Expired - Fee Related
- 2008-06-13 KR KR1020097027528A patent/KR20100029222A/ko not_active Application Discontinuation

Also Published As

Publication number	Publication date
KR20100029222A (ko)	2010-03-16
US8278675B2 (en)	2012-10-02
CN101689589A (zh)	2010-03-31
ITMI20071238A1 (it)	2008-12-21
ATE542247T1 (de)	2012-02-15
EP2171774A1 (de)	2010-04-07
JP2010530625A (ja)	2010-09-09
CN101689589B (zh)	2011-04-27
WO2008155295A1 (en)	2008-12-24
US20100176409A1 (en)	2010-07-15
EP2171774B1 (de)	2012-01-18

Legal Events

Date	Code	Title	Description
2011-03-15	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110314
2012-07-31	TRDD	Decision of grant or rejection written
2012-08-08	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120807
2012-08-09	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01
2012-08-09	A977	Report on retrieval	Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120808
2012-09-13	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120906
2012-09-14	R150	Certificate of patent or registration of utility model	Ref document number: 5086432 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150
2012-09-20	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20150914 Year of fee payment: 3
2015-09-15	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2016-09-13	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2017-09-05	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2018-09-04	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2019-09-03	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2020-08-27	R250	Receipt of annual fees	Free format text: JAPANESE INTERMEDIATE CODE: R250
2021-09-14	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
JP5086432B2 (ja)	2012-11-28	ゲッタシステムを含む白色または紫外ｌｅｄ
RU2526809C2 (ru)	2014-08-27	Люминесцентный преобразователь для усиленного люминофором источника света, содержащий органические и неорганические люминофоры
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FR2530076A1 (fr)	1984-01-13	Lampe a decharge dans la vapeur de mercure a basse pression
JP2005322602A (ja)	2005-11-17	無影灯
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TW201212092A (en)	2012-03-16	Fluorescent lamp
KR101581982B1 (ko)	2015-12-31	광조사 유닛
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JPH0794148A (ja)	1995-04-07	反射形放電灯
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