JP5081959B2 - 酸化物焼結体及び酸化物半導体薄膜 - Google Patents

酸化物焼結体及び酸化物半導体薄膜 Download PDF

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Publication number: JP5081959B2
Authority: JP; Japan
Prior art keywords: oxide; sintered body; thin film; oxide semiconductor; indium
Prior art date: 2010-08-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

JP2010194455A

Other languages

English (en)

Japanese (ja)

Other versions

JP2012054335A (ja

JP2012054335A5 (zh

Inventor

英生高見

幸三長田

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

JX Nippon Mining and Metals Corp

Original Assignee

JX Nippon Mining and Metals Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2010-08-31

Filing date

2010-08-31

Publication date

2012-11-28

2010-08-31 Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp

2010-08-31 Priority to JP2010194455A priority Critical patent/JP5081959B2/ja

2011-07-27 Priority to PCT/JP2011/067133 priority patent/WO2012029455A1/ja

2011-07-27 Priority to KR1020137007631A priority patent/KR101331293B1/ko

2011-08-10 Priority to TW100128488A priority patent/TWI405863B/zh

2012-03-15 Publication of JP2012054335A publication Critical patent/JP2012054335A/ja

2012-08-23 Publication of JP2012054335A5 publication Critical patent/JP2012054335A5/ja

2012-11-28 Application granted granted Critical

2012-11-28 Publication of JP5081959B2 publication Critical patent/JP5081959B2/ja

Status Active legal-status Critical Current

2030-08-31 Anticipated expiration legal-status Critical

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239000010409 thin film Substances 0.000 title claims abstract description 27
239000004065 semiconductor Substances 0.000 title claims abstract description 24
239000011701 zinc Substances 0.000 claims abstract description 56
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 21
229910052738 indium Inorganic materials 0.000 claims abstract description 20
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 19
229910052751 metal Inorganic materials 0.000 claims abstract description 19
229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
239000001301 oxygen Substances 0.000 claims abstract description 19
239000002184 metal Substances 0.000 claims abstract description 18
JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims abstract description 11
239000011159 matrix material Substances 0.000 claims description 3
239000010408 film Substances 0.000 abstract description 38
239000000203 mixture Substances 0.000 abstract description 23
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 6
229910052733 gallium Inorganic materials 0.000 abstract description 6
229910052782 aluminium Inorganic materials 0.000 abstract description 5
229910052719 titanium Inorganic materials 0.000 abstract description 5
239000000126 substance Substances 0.000 abstract 2
238000004544 sputter deposition Methods 0.000 description 32
239000007789 gas Substances 0.000 description 14
239000002245 particle Substances 0.000 description 14
239000002994 raw material Substances 0.000 description 14
239000000843 powder Substances 0.000 description 13
239000011135 tin Substances 0.000 description 13
238000000034 method Methods 0.000 description 12
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
238000005477 sputtering target Methods 0.000 description 10
230000002159 abnormal effect Effects 0.000 description 9
238000004519 manufacturing process Methods 0.000 description 8
238000005245 sintering Methods 0.000 description 8
239000000758 substrate Substances 0.000 description 8
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
230000015572 biosynthetic process Effects 0.000 description 7
238000009616 inductively coupled plasma Methods 0.000 description 6
238000004458 analytical method Methods 0.000 description 5
229910052786 argon Inorganic materials 0.000 description 5
238000005259 measurement Methods 0.000 description 5
239000011812 mixed powder Substances 0.000 description 5
239000010936 titanium Substances 0.000 description 5
229910052725 zinc Inorganic materials 0.000 description 5
238000000227 grinding Methods 0.000 description 4
238000010438 heat treatment Methods 0.000 description 4
238000010298 pulverizing process Methods 0.000 description 4
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
230000000052 comparative effect Effects 0.000 description 3
239000000470 constituent Substances 0.000 description 3
230000036961 partial effect Effects 0.000 description 3
239000000523 sample Substances 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910007604 Zn—Sn—O Inorganic materials 0.000 description 2
229910021417 amorphous silicon Inorganic materials 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
238000009826 distribution Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000011521 glass Substances 0.000 description 2
239000012535 impurity Substances 0.000 description 2
229910003437 indium oxide Inorganic materials 0.000 description 2
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
238000001755 magnetron sputter deposition Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
238000002156 mixing Methods 0.000 description 2
238000000465 moulding Methods 0.000 description 2
231100000989 no adverse effect Toxicity 0.000 description 2
239000007921 spray Substances 0.000 description 2
230000003746 surface roughness Effects 0.000 description 2
229910052718 tin Inorganic materials 0.000 description 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
238000002441 X-ray diffraction Methods 0.000 description 1
229910007541 Zn O Inorganic materials 0.000 description 1
230000002411 adverse Effects 0.000 description 1
238000004220 aggregation Methods 0.000 description 1
230000002776 aggregation Effects 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
238000000137 annealing Methods 0.000 description 1
238000005219 brazing Methods 0.000 description 1
238000009694 cold isostatic pressing Methods 0.000 description 1
230000002860 competitive effect Effects 0.000 description 1
230000002596 correlated effect Effects 0.000 description 1
238000005336 cracking Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000000151 deposition Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
235000013312 flour Nutrition 0.000 description 1
238000007733 ion plating Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000024121 nodulation Effects 0.000 description 1
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000005498 polishing Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000000746 purification Methods 0.000 description 1
238000001771 vacuum deposition Methods 0.000 description 1
239000011787 zinc oxide Substances 0.000 description 1

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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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Engineering & Computer Science (AREA)
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Manufacturing & Machinery (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Power Engineering (AREA)
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Condensed Matter Physics & Semiconductors (AREA)
Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Chemical Kinetics & Catalysis (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Physical Vapour Deposition (AREA)
Compositions Of Oxide Ceramics (AREA)
Crystallography & Structural Chemistry (AREA)
Thin Film Transistor (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

JP2010194455A 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜 Active JP5081959B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2010194455A JP5081959B2 (ja)	2010-08-31	2010-08-31	酸化物焼結体及び酸化物半導体薄膜
PCT/JP2011/067133 WO2012029455A1 (ja)	2010-08-31	2011-07-27	酸化物焼結体及び酸化物半導体薄膜
KR1020137007631A KR101331293B1 (ko)	2010-08-31	2011-07-27	산화물 소결체 및 산화물 반도체 박막
TW100128488A TWI405863B (zh)	2010-08-31	2011-08-10	Oxide sintered body and oxide semiconductor thin film

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Application Number	Priority Date	Filing Date	Title
JP2010194455A JP5081959B2 (ja)	2010-08-31	2010-08-31	酸化物焼結体及び酸化物半導体薄膜

Publications (3)

Publication Number	Publication Date
JP2012054335A JP2012054335A (ja)	2012-03-15
JP2012054335A5 JP2012054335A5 (zh)	2012-08-23
JP5081959B2 true JP5081959B2 (ja)	2012-11-28

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JP2010194455A Active JP5081959B2 (ja)	2010-08-31	2010-08-31	酸化物焼結体及び酸化物半導体薄膜

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JP (1)	JP5081959B2 (zh)
KR (1)	KR101331293B1 (zh)
TW (1)	TWI405863B (zh)
WO (1)	WO2012029455A1 (zh)

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JP2012151469A (ja) *	2010-12-28	2012-08-09	Kobe Steel Ltd	薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
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