JP5077278B2 - ワイヤボンディング方法 - Google Patents
ワイヤボンディング方法 Download PDFInfo
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- JP5077278B2 JP5077278B2 JP2009091795A JP2009091795A JP5077278B2 JP 5077278 B2 JP5077278 B2 JP 5077278B2 JP 2009091795 A JP2009091795 A JP 2009091795A JP 2009091795 A JP2009091795 A JP 2009091795A JP 5077278 B2 JP5077278 B2 JP 5077278B2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
図1は、本発明の第1実施形態に係る電子装置S1の概略断面構成を示す図である。本実施形態の電子装置S1は、大きくは、基板10と、基板10の一面上に搭載された被接合用ランドとしての1次ボンディングランド21を有する電子部品20と、基板10の一面上に設けられた2次ボンディングランド30と、電子部品20とボンディングランド30とを結線するCuよりなるワイヤ40とを備えて構成されている。
ものである。
図5は、本発明の第2実施形態に係るワイヤボンディング方法の要部を示す工程図である。ここでは、上記第1実施形態のワイヤボンディング方法との相違点を中心に述べることとする。
図6は、本発明の他の実施形態に係るダミーランド50を示す図であり、(a)は概略平面図、(b)は概略断面図である。
21 被接合用ランドとしての1次ボンディングランド
40 ワイヤ
40a ワイヤの引き出し部
41 イニシャルボール
50 ダミーランド
51 ダミーランドの下地層としてのメタライズ層
52 ダミーランドの貴金属層としてのAuメッキ層
100 ツール
Claims (4)
- Cuよりなるワイヤ(40)を被接合用ランド(21)にワイヤボンディングする方法であって、
先端部から前記ワイヤ(40)が引き出されるようになっているワイヤボンディング用のツール(100)を用い、前記ツール(100)の先端部から引き出された前記ワイヤ(40)の引き出し部(40a)を放電により溶融させて球状のイニシャルボール(41)を形成するボール形成工程と、
その後、前記ツール(100)によって、前記被接合用ランド(21)に前記イニシャルボール(41)を押し当て前記イニシャルボール(41)に超音波を印加することにより、前記被接合用ランド(21)に前記イニシャルボール(41)を接合するボンディング工程と、を備えるワイヤボンディング方法において、
前記被接合用ランド(21)とは別部位に、下地層(51)の上に表層としてCuよりも融点の低い貴金属よりなる貴金属層(52)を形成してなるダミーランド(50)を配置しておき、
前記ボール形成工程の前に、前記ツール(100)によって、前記ワイヤ(40)の引き出し部(40a)を前記ダミーランド(50)の前記貴金属層(52)に押し付けた後、前記ダミーランド(50)から離脱させることにより、前記引き出し部(40a)とともに前記下地層(51)から前記貴金属層(52)を剥離させて、当該離脱した前記引き出し部(40a)の先端部に前記貴金属層(52)を付着させる貴金属付着工程を行い、
次に、前記ボール形成工程では、前記貴金属層(52)を構成する前記貴金属が付着した前記ワイヤ(40)の引き出し部(40a)に対して前記放電を行うことにより、前記イニシャルボール(41)として先端部側が前記貴金属よりなるものを形成し、
続いて、前記イニシャルボール(41)の先端部側を、前記被接合用ランド(21)に押し当てて前記ボンディング工程を行うことを特徴とするワイヤボンディング方法。 - 前記ダミーランド(50)として、前記下地層(51)の表面に平坦化処理を施し、前記下地層(51)と前記貴金属層(52)との密着力を低減したものを用意することを特徴とする請求項1に記載のワイヤボンディング方法。
- 前記ダミーランド(50)として、前記下地層(51)の上に前記貴金属層(52)が2層、積層形成されるとともに、当該2層の前記貴金属層(52)のうち前記下地層(51)側に位置する前記貴金属層(52a)の表面が鏡面処理され、その上に表層側の前記貴金属層(52b)が形成されたものを用意し、
前記貴金属付着工程では、前記表層側の前記貴金属層(52b)を剥離させることを特徴とする請求項1に記載のワイヤボンディング方法。 - 前記貴金属付着工程の後、先端部に前記貴金属層(52)が付着した前記引き出し部(40a)の当該先端部に、インクジェット法により貴金属を含む貴金属ペーストを付着させ、続いてボール形成工程を行うことを特徴とする請求項1ないし3のいずれか1つに記載のワイヤボンディング方法。
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