JP5071437B2 - Plasma processing apparatus and tray mounting method in plasma processing apparatus - Google Patents

Plasma processing apparatus and tray mounting method in plasma processing apparatus Download PDF

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JP5071437B2
JP5071437B2 JP2009119506A JP2009119506A JP5071437B2 JP 5071437 B2 JP5071437 B2 JP 5071437B2 JP 2009119506 A JP2009119506 A JP 2009119506A JP 2009119506 A JP2009119506 A JP 2009119506A JP 5071437 B2 JP5071437 B2 JP 5071437B2
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tray
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processing apparatus
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尚吾 置田
浩海 朝倉
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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本発明は、処理対象物に対してプラズマ処理を行うプラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法に関するものである。   The present invention relates to a plasma processing apparatus that performs plasma processing on an object to be processed and a tray mounting method in the plasma processing apparatus.

プラズマ処理装置は、チャンバ内に形成される処理室内に設けられた支持部材上に処理対象物を支持し、密閉状態にした処理室内に高周波電圧を印加するとともにプラズマ発生用のガスを供給して処理室内にプラズマを発生させることにより、処理対象物にドライエッチング等のプラズマ処理を施すようになっている。   The plasma processing apparatus supports a processing object on a support member provided in a processing chamber formed in a chamber, applies a high frequency voltage to a sealed processing chamber, and supplies a plasma generating gas. By generating plasma in the processing chamber, plasma processing such as dry etching is performed on the processing target.

このようなプラズマ処理装置では、複数の処理対象物を一括して支持部材上に支持させるためのトレイが用いられる。トレイは厚さ方向に貫通して設けられた複数の収容孔を有し、各収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するように構成されている。支持部材には同期して昇降する複数のピン状部材が設けられており、処理対象物を収容したトレイを支持部材の上方で位置合わせをしたところでピン状部材を上昇させてトレイを下方から支持し、それからピン状部材を下降させると、支持部材の上面に設けられた複数の台状部がそれぞれトレイの各収容孔を相対的に上方に突き抜けるので、トレイの収容孔内に収容された処理対象物は台状部によって相対的に押し上げられ、処理対象物は張り出し部から上方に離間した状態で、各台状部の上面に支持される（例えば特許文献１）。   In such a plasma processing apparatus, a tray for supporting a plurality of processing objects collectively on a support member is used. The tray has a plurality of receiving holes provided penetrating in the thickness direction, and the outer edge of the object to be processed is projected from below by an overhanging portion provided to protrude inward from the inner peripheral portion of each receiving hole. The processing object is supported and accommodated inside the accommodation hole. The support member is provided with a plurality of pin-like members that move up and down in synchronization. When the tray containing the processing object is aligned above the support member, the pin-like member is raised to support the tray from below. Then, when the pin-shaped member is lowered, the plurality of platform-like portions provided on the upper surface of the support member penetrate each of the receiving holes of the tray relatively upward, so that the processing accommodated in the receiving hole of the tray The target object is relatively pushed up by the table-shaped part, and the processing object is supported on the upper surface of each table-shaped part in a state of being spaced upward from the projecting part (for example, Patent Document 1).

特開２００７−１０９７７０号公報JP 2007-109770 A

しかしながら、上記従来のプラズマ処理装置において、トレイを支持部材の上面に載置する際、トレイの支持部材に対する位置合わせを正確に行った状態でトレイをピン状部材に支持させたとしても、ピン状部材が下降してトレイがトレイ載置面に接触するとき、位置ずれが生じてしまう可能性があった。そうすると、台状部は収容孔を突き抜けることができずにトレイと干渉してしまい、処理対象物を支持部材上に正しい姿勢で支持することができなくなるおそれがあるという問題点があった。処理対象物を支持部材上に正しい姿勢で支持できなかった場合には、トレイの載置に関する一連の作業をやり直さなければならず、プラズマ処理の作業効率を低下させる要因となっていた。   However, in the conventional plasma processing apparatus, when the tray is placed on the upper surface of the support member, even if the tray is supported by the pin-like member in a state where the tray is accurately aligned with the support member, When the member descends and the tray comes into contact with the tray mounting surface, there is a possibility that the position shift occurs. If it does so, the base-shaped part cannot penetrate the accommodation hole and interferes with the tray, and there is a problem that the processing object may not be supported in a correct posture on the support member. When the object to be processed cannot be supported on the support member in a correct posture, a series of operations related to tray placement must be performed again, which is a factor of reducing the work efficiency of the plasma processing.

また、近年のプラズマ処理装置では、より多くの処理対象物に対して一括してプラズマ処理（バッチ処理）を施して効率化を図ろうとする傾向が強い。より多くの処理対象物を収納するためにトレイサイズを２００ｍｍから３４０ｍｍと大型化することで、θ方向（水平面内における回転方向）のずれによる位置ずれが大きくなり、また１つのトレイに収容される処理対象物の数が多くなるほど許容できるトレイの位置ずれは小さくなるため、上記の問題は早急に解決する必要がある。特にＬＥＤ基板の処理対象物では、処理対象物の外周部付近までの歩留まり向上が求められており、処理対象物を支持部材の台状部上に載置して静電吸着保持させて冷却しながら処理対象物をプラズマ処理する際に、処理対象物の外周部付近まで支持部の台状部にて静電吸着保持させるため、台状部の外径とトレイの収容孔の隙間をより小さくする必要があり、許容できるトレイの位置ずれは更に小さくなる。   In recent plasma processing apparatuses, there is a strong tendency to increase the efficiency by performing plasma processing (batch processing) on a larger number of processing objects at once. By increasing the tray size from 200 mm to 340 mm in order to store more processing objects, the positional shift due to the shift in the θ direction (rotation direction in the horizontal plane) increases, and the tray is stored in one tray. The larger the number of objects to be processed, the smaller the allowable tray misalignment. Therefore, the above problem needs to be solved quickly. In particular, the processing target of the LED substrate is required to improve the yield up to the vicinity of the outer periphery of the processing target, and the processing target is placed on the base portion of the support member and held by electrostatic adsorption to be cooled. However, when plasma processing is performed on the object to be processed, electrostatic chucking is performed on the platform portion of the support portion up to the vicinity of the outer periphery of the object to be processed, so that the gap between the outside diameter of the platform portion and the tray accommodation hole is made smaller. The allowable tray misalignment is further reduced.

そこで本発明は、処理対象物を支持部材上の正確な位置に載置して処理対象物を支持部材上に正しい姿勢で支持することができるようにしたプラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法を提供することを目的とする。   Therefore, the present invention provides a plasma processing apparatus in which a processing object is placed at an accurate position on a support member so that the processing object can be supported on the support member in a correct posture. It aims at providing the mounting method.

請求項１に記載のプラズマ処理装置は、厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイと、トレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材と、支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段と、トレイの下面 側から下方に突出して設けられた突起と、トレイ載置面に下方に窪んで設けられ、トレイ昇降手段によってトレイがトレイ載置面に載置される過程で前記突起が上方から嵌入する突起嵌入穴とを備え、トレイの張り出し部の処理対象物を支持する支持面と前記突起の下端部との間の上下方向距離は、トレイ載置面と台状部の上面との間の上下方向距離よりも大きい。 The plasma processing apparatus according to claim 1 has a receiving hole provided penetrating in the thickness direction, and is processed by an overhanging portion provided to protrude from the inner peripheral portion of the receiving hole to the inside of the receiving hole. A tray that supports the outer edge of the object from below and accommodates the object to be processed in the accommodation hole, a tray placement surface on which the tray is placed, and a platform portion that protrudes upward from the tray placement surface In the process in which the tray is placed on the tray placement surface from above, the table-shaped portion penetrates the tray accommodation hole relatively upward, and thus is processed in the tray accommodation hole. The object is pushed upward relatively by the platform, the support member is supported on the upper surface of the platform in a state where the object to be processed is spaced upward from the projecting portion, and the tray is raised and lowered relative to the support member. On the tray mounting surface of the Tray lifting / lowering means for separating from the lay placement surface, protrusions protruding downward from the lower surface side of the tray, and depressions provided on the tray placement surface, the tray being placed on the tray by the tray lifting / lowering means. A protrusion insertion hole into which the protrusion is inserted from above in the process of being placed on the surface, and the vertical distance between the support surface that supports the processing target of the projecting portion of the tray and the lower end portion of the protrusion, It is larger than the vertical distance between the tray placement surface and the upper surface of the table-like portion .

請求項２に記載のプラズマ処理装置は、厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイと、トレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材と、支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段と、トレイの下面 側から下方に突出して設けられた突起と、トレイ載置面に下方に窪んで設けられ、トレイ昇降手段によってトレイがトレイ載置面に載置される過程で前記突起が上方から嵌入する突起嵌入穴とを備え、トレイ昇降手段はトレイ載置面から上方に延びた部分が同期して昇降する複数のピン状部材から成り、トレイの下面側には各ピン状部材の上端部が嵌入するピン状部材嵌入穴が設けられている。 The plasma processing apparatus according to claim 2 has an accommodation hole provided penetrating in the thickness direction, and is subject to treatment by an overhanging portion provided so as to project from the inner periphery of the accommodation hole to the inside of the accommodation hole. A tray that supports the outer edge of the object from below and accommodates the object to be processed in the accommodation hole, a tray placement surface on which the tray is placed, and a platform portion that protrudes upward from the tray placement surface In the process in which the tray is placed on the tray placement surface from above, the table-shaped portion penetrates the tray accommodation hole relatively upward, and thus is processed in the tray accommodation hole. The object is pushed upward relatively by the platform, the support member is supported on the upper surface of the platform in a state where the object to be processed is spaced upward from the projecting portion, and the tray is raised and lowered relative to the support member. On the tray mounting surface of the Tray lifting / lowering means for separating from the lay placement surface, protrusions protruding downward from the lower surface side of the tray, and depressions provided on the tray placement surface, the tray being placed on the tray by the tray lifting / lowering means. A protrusion insertion hole into which the protrusion is inserted from above in the process of being placed on the surface, and the tray lifting and lowering means is composed of a plurality of pin-like members whose portions extending upward from the tray placement surface are moved up and down synchronously, A pin-like member insertion hole into which the upper end portion of each pin-like member is fitted is provided on the lower surface side of the tray .

請求項３に記載のプラズマ処理装置は、請求項１又は２に記載のプラズマ処理装置であって、前記突起嵌入穴の内壁面は上方に広がるテーパ形状に形成されている。   A plasma processing apparatus according to a third aspect is the plasma processing apparatus according to the first or second aspect, wherein an inner wall surface of the protrusion insertion hole is formed in a tapered shape extending upward.

請求項４に記載のプラズマ処理装置は、請求項１乃至３の何れかに記載のプラズマ処理装置であって、前記突起及び前記突起嵌入穴は少なくとも３組設けられている。   A plasma processing apparatus according to a fourth aspect is the plasma processing apparatus according to any one of the first to third aspects, wherein at least three sets of the protrusions and the protrusion insertion holes are provided.

請求項５に記載のプラズマ処理装置は、厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイと、トレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材と、支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段とを備え、トレイ昇降手段はトレイ載置面から上方に延びた部分が同期して昇降する複数のピン状部材から成り、トレイの下面側には各ピン状部材の上端部が嵌入するピン状部材嵌入穴が設けられている。 The plasma processing apparatus according to claim 5 has an accommodation hole provided penetrating in the thickness direction, and is subject to treatment by an overhanging portion provided to project inward from the inner peripheral portion of the accommodation hole. A tray that supports the outer edge of the object from below and accommodates the object to be processed in the accommodation hole, a tray placement surface on which the tray is placed, and a platform portion that protrudes upward from the tray placement surface In the process in which the tray is placed on the tray placement surface from above, the table-shaped portion penetrates the tray accommodation hole relatively upward, and thus is processed in the tray accommodation hole. The object is pushed upward relatively by the platform, the support member is supported on the upper surface of the platform in a state where the object to be processed is spaced upward from the projecting portion, and the tray is raised and lowered relative to the support member. On the tray mounting surface of the A tray elevating means for separating from the lay placement surface, and the tray elevating means is composed of a plurality of pin-like members whose portions extending upward from the tray placement surface are moved up and down in synchronization. A pin-like member insertion hole into which the upper end portion of each pin-like member is fitted is provided.

請求項６に記載のプラズマ処理装置は、請求項２又は５に記載のプラズマ処理装置であって、前記ピン状部材嵌入穴の内壁面は下方に広がるテーパ形状に形成されている。 A plasma processing apparatus according to a sixth aspect is the plasma processing apparatus according to the second or fifth aspect , wherein an inner wall surface of the pin-like member insertion hole is formed in a tapered shape extending downward.

請求項７に記載のプラズマ処理装置におけるトレイの載置方法は、厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイを、このトレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材に載置するプラズマ処理装置におけるトレイの載置方法であって、支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段を、トレイ載置面から上方に延びた部分が同期して昇降する複数のピン状部材から構成し、これら複数のピン状部材の上端部を、トレイの下面側に設けられたピン状部材嵌入穴に嵌入させるようにした。 The method for placing a tray in a plasma processing apparatus according to claim 7 has a receiving hole provided penetrating in the thickness direction, and is provided so as to protrude from the inner periphery of the receiving hole to the inside of the receiving hole. The tray that supports the outer edge of the object to be processed from below and accommodates the object to be processed inside the accommodation hole is projected upward from the tray placement surface and the tray placement surface. The tray receiving hole is formed by relatively projecting upward through the tray receiving hole in the process of placing the tray on the tray mounting surface from above. The plasma processing is performed by pushing up the processing object accommodated in the inside relatively upward by the platform, and placing the processing object on the support member supported on the upper surface of the platform in a state where the processing object is spaced upward from the projecting portion. In the tray mounting method in the device Thus, a tray lifting / lowering means for lifting and lowering the tray with respect to the support member and separating the tray from the tray mounting surface and extending from the tray mounting surface extends upward from the tray mounting surface. The portion is composed of a plurality of pin-like members that move up and down synchronously, and the upper ends of the plurality of pin-like members are fitted into pin-like member insertion holes provided on the lower surface side of the tray.

本発明では、トレイがトレイ載置面に載置される過程において、トレイの下面側から下方に突出して設けられた突起が、トレイ載置面上に下方に窪んで設けられた突起嵌入穴に上方から嵌入するようになっているので、トレイは支持部材上の正確な位置に載置される。このため台状部とトレイは干渉せず、処理対象物を支持部材上に正しい姿勢で支持することができるので、プラズマ処理における作業効率の低下を防止することができる。   In the present invention, in the process in which the tray is placed on the tray placement surface, the projection that protrudes downward from the lower surface side of the tray is formed in the projection insertion hole that is recessed downward on the tray placement surface. Since the tray is inserted from above, the tray is placed at an accurate position on the support member. For this reason, the platform and the tray do not interfere with each other, and the object to be processed can be supported on the support member in a correct posture, so that it is possible to prevent a reduction in work efficiency in the plasma processing.

本発明の一実施の形態におけるプラズマ処理装置の構成図The block diagram of the plasma processing apparatus in one embodiment of this invention 本発明の一実施の形態におけるプラズマ処理装置が備えるトレイを基板とともに示す（ａ）斜視図（ｂ）平面図The tray with which the plasma processing apparatus in one embodiment of the present invention is provided is shown with a substrate (a) perspective view (b) top view 本発明の一実施の形態におけるプラズマ処理装置が備えるトレイを基板とともに示す側断面図The sectional side view which shows the tray with which the plasma processing apparatus in one embodiment of this invention is provided with a board | substrate 本発明の一実施の形態におけるプラズマ処理装置が備える基板サセプタの一部の（ａ）斜視図（ｂ）側断面図(A) Perspective view (b) Side sectional view of a part of a substrate susceptor provided in a plasma processing apparatus in an embodiment of the present invention （ａ）（ｂ）（ｃ）本発明の一実施の形態におけるプラズマ処理装置が備えるトレイを基板サセプタ上に載置する手順を説明する基板サセプタの側断面図(A) (b) (c) Side sectional view of the substrate susceptor for explaining the procedure for placing the tray provided in the plasma processing apparatus in one embodiment of the present invention on the substrate susceptor （ａ）（ｂ）（ｃ）本発明の一実施の形態におけるプラズマ処理装置が備えるトレイの部分側断面図(A) (b) (c) Partial sectional side view of the tray with which the plasma processing apparatus in one embodiment of this invention is provided （ａ）（ｂ）（ｃ）本発明の一実施の形態におけるプラズマ処理装置が備えるトレイ及び基板支持部材の部分側断面図(A) (b) (c) Partial side sectional view of a tray and a substrate support member provided in the plasma processing apparatus according to one embodiment of the present invention. （ａ）（ｂ）（ｃ）本発明の一実施の形態におけるトレイを基板支持部材上に載置する手順の説明図(A) (b) (c) Explanatory drawing of the procedure which mounts the tray in one embodiment of this invention on a board | substrate support member. 本発明の一実施の形態におけるプラズマ処理装置が備える基板支持部材、トレイ及び基板の部分側断面図1 is a partial side sectional view of a substrate support member, a tray, and a substrate included in a plasma processing apparatus according to an embodiment of the present invention. 本発明の一実施の形態におけるプラズマ処理装置が備えるトレイを基板とともに示す斜視図The perspective view which shows the tray with which the plasma processing apparatus in one embodiment of this invention is provided with a board | substrate 本発明の一実施の形態におけるプラズマ処理装置が備える基板サセプタの一部の斜視図The perspective view of a part of substrate susceptor with which the plasma processing apparatus in one embodiment of the present invention is provided 本発明の一実施の形態におけるプラズマ処理装置が備える基板サセプタ及びトレイの一部を示す平面図The top view which shows a part of substrate susceptor and tray with which the plasma processing apparatus in one embodiment of this invention is equipped （ａ）（ｂ）（ｃ）本発明の一実施の形態におけるプラズマ処理装置が備えるトレイの部分側断面図(A) (b) (c) Partial sectional side view of the tray with which the plasma processing apparatus in one embodiment of this invention is provided

以下、図面を参照して本発明の実施の形態について説明する。図１において、本発明の一実施の形態におけるプラズマ処理装置１は処理対象物の一例としての基板Ｗに対してプラズマ処理（例えばドライエッチング）を施すものであり、内部に処理室２が形成されたチャンバ（真空容器）３と、処理室２内に設けられ、複数の基板Ｗを支持可能な基板サセプタ４と、複数の基板Ｗを収容した状態で処理室２内に搬入され、基板サセプタ４の（後述する基板支持部材３３の）の上面のトレイ載置面５に載置されることによって複数の基板Ｗを基板サセプタ４の上面に支持させるトレイ６と、トレイ６を基板サセプタ４の上方で昇降させることによりトレイ６のトレイ載置面５への載置及びトレイ６のトレイ載置面５からの離間を行うトレイ昇降手段としての複数（ここでは４つ）の昇降ピン７等を備えて構成されている。   Embodiments of the present invention will be described below with reference to the drawings. In FIG. 1, a plasma processing apparatus 1 according to an embodiment of the present invention performs plasma processing (for example, dry etching) on a substrate W as an example of a processing object, and a processing chamber 2 is formed inside. The substrate (vacuum container) 3, the substrate susceptor 4 provided in the processing chamber 2 and capable of supporting a plurality of substrates W, and the substrate susceptor 4 loaded into the processing chamber 2 while accommodating the plurality of substrates W. The tray 6 that supports the plurality of substrates W on the upper surface of the substrate susceptor 4 by being placed on the tray placement surface 5 on the upper surface of the substrate support member 33 (to be described later), and the tray 6 above the substrate susceptor 4. A plurality of (four in this case) lifting pins 7 are provided as tray lifting means for placing the tray 6 on the tray placement surface 5 and moving the tray 6 away from the tray placement surface 5 by raising and lowering the tray 6. Te It is.

図１において、プラズマ処理装置１にはプラズマ発生用のガスが充填されたガス供給源１１、真空ポンプ等から成る真空排気装置１２が設けられている。チャンバ３の上方には誘電コイル１３が設けられており、誘電コイル１３は高周波電源及びマッチング回路等を有して構成される高周波電圧印加装置１４と繋がっている。   In FIG. 1, a plasma processing apparatus 1 is provided with a gas supply source 11 filled with a plasma generating gas, and a vacuum exhaust apparatus 12 including a vacuum pump and the like. A dielectric coil 13 is provided above the chamber 3, and the dielectric coil 13 is connected to a high-frequency voltage application device 14 having a high-frequency power source and a matching circuit.

ガス供給源１１は、このプラズマ処理装置１が備えるコントローラ１５（図１）により作動制御がなされてチャンバ３の処理室２内にプラズマ発生用のガスを供給し、真空排気装置１２はコントローラ１５により作動制御がなされて処理室２内のガスを真空排気する。高周波電圧印加装置１４はコントローラ１５により作動制御がなされて誘電コイル１３に高周波電圧を印加する。   The gas supply source 11 is controlled in operation by a controller 15 (FIG. 1) provided in the plasma processing apparatus 1 to supply a gas for generating plasma into the processing chamber 2 of the chamber 3, and the vacuum exhaust apparatus 12 is controlled by the controller 15. The operation is controlled and the gas in the processing chamber 2 is evacuated. The high frequency voltage application device 14 is controlled by a controller 15 to apply a high frequency voltage to the dielectric coil 13.

図２（ａ），（ｂ）及び図３において、トレイ６は薄板円盤状の部材から成り、セラミックス材料等の電気絶縁性材料から形成される。トレイ６には厚さ方向に貫通して設けられた複数（ここでは７つ）の円形の基板収容孔２１が設けられており、各基板収容孔２１の内周部の下縁部には、その基板収容孔２１の内方に張り出して設けられたリング状の張り出し部２２が設けられている。   2A, 2B, and 3, the tray 6 is made of a thin disk-like member, and is made of an electrically insulating material such as a ceramic material. The tray 6 is provided with a plurality (seven in this case) of circular substrate accommodation holes 21 provided penetrating in the thickness direction, and the lower edge of the inner peripheral portion of each substrate accommodation hole 21 is A ring-shaped projecting portion 22 is provided so as to project inward of the substrate housing hole 21.

図３に示すように、トレイ６が有する各基板収容孔２１の内径Ｒ１は基板Ｗの外径Ｒ０よりも大きく、張り出し部２２の内径Ｒ２は基板Ｗの外径Ｒ０よりも小さくなっている。このため基板Ｗは、その外縁が張り出し部２２によって下方から支持された状態で基板収容孔２１の内部に収容される。基板収容孔２１内に基板Ｗが収容された状態では、基板Ｗの下面は基板収容孔２１から（張り出し部２２から）下方に露出した状態となる。   As shown in FIG. 3, the inner diameter R <b> 1 of each substrate accommodation hole 21 included in the tray 6 is larger than the outer diameter R <b> 0 of the substrate W, and the inner diameter R <b> 2 of the overhang portion 22 is smaller than the outer diameter R <b> 0 of the substrate W. For this reason, the substrate W is accommodated in the substrate accommodation hole 21 with its outer edge supported from below by the overhanging portion 22. In a state where the substrate W is accommodated in the substrate accommodation hole 21, the lower surface of the substrate W is exposed downward from the substrate accommodation hole 21 (from the projecting portion 22).

図１において、基板サセプタ４は、チャンバ３の上面に設置されたベース部３１と、ベース部３１の上面に設けられた下部電極３２と、下部電極３２の上面に設けられた基板支持部材３３と、下部電極３２及び基板支持部材３３の外周を囲うように設けられた円筒状のガイド部材３４と、ガイド部材３４の外周を覆って設けられたアースシールド部材３５
と、ガイド部材３４及びアースシールド部材３５の上方を覆うように設けられた円環状のガイドリング３６を有して構成されている。ここで、ベース部３１、基板支持部材３３、ガイド部材３４及びガイドリング３６はセラミックス等の誘電体材料から成り、下部電極３２及びアースシールド部材３５は金属等の導電性材料から成っている。なお、ガイドリング３６の内径はトレイ６の外径よりも大きい寸法となっている。 In FIG. 1, the substrate susceptor 4 includes a base portion 31 installed on the upper surface of the chamber 3, a lower electrode 32 provided on the upper surface of the base portion 31, and a substrate support member 33 provided on the upper surface of the lower electrode 32. A cylindrical guide member 34 provided so as to surround the outer periphery of the lower electrode 32 and the substrate support member 33, and an earth shield member 35 provided so as to cover the outer periphery of the guide member 34.
And an annular guide ring 36 provided so as to cover the upper part of the guide member 34 and the ground shield member 35. Here, the base portion 31, the substrate support member 33, the guide member 34, and the guide ring 36 are made of a dielectric material such as ceramics, and the lower electrode 32 and the earth shield member 35 are made of a conductive material such as metal. The inner diameter of the guide ring 36 is larger than the outer diameter of the tray 6.

下部電極３２は、高周波電源及びマッチング回路を有して構成されるバイアス電圧印加装置３７と繋がっており、バイアス電圧印加装置３７はコントローラ１５により作動制御がなされて下部電極３２に高周波のバイアス電圧を印加する。   The lower electrode 32 is connected to a bias voltage applying device 37 having a high frequency power source and a matching circuit. The bias voltage applying device 37 is controlled by the controller 15 to apply a high frequency bias voltage to the lower electrode 32. Apply.

図４及び図５において、基板支持部材３３は、トレイ６が載置される前述のトレイ載置面５と、トレイ載置面５から上方に突出して設けられた複数の台状部４１を有している。図４（ａ），（ｂ）において、各台状部４１には下方に窪んだ凹部４１ａが形成されており、各台状部４１は基板Ｗの外径Ｒ０より１〜３ｍｍ程度小さい外径を有する円環状部分４２と、円環状部分４２の内部に位置する複数の円柱状部分４３から成る。円環状部分４２の上面４２ａと各円柱状部分４３の上面４３ａは各台状部４１の上面の基板Ｗを支持する基板支持面４４となっている（図４（ｂ）及び図５（ａ））。   4 and 5, the substrate support member 33 has the above-described tray mounting surface 5 on which the tray 6 is mounted and a plurality of table-like portions 41 provided so as to protrude upward from the tray mounting surface 5. is doing. 4 (a) and 4 (b), each base portion 41 is formed with a recessed portion 41a that is recessed downward, and each base portion 41 has an outer diameter that is smaller by about 1 to 3 mm than the outer diameter R0 of the substrate W. And a plurality of cylindrical portions 43 located inside the annular portion 42. The upper surface 42a of the annular portion 42 and the upper surface 43a of each columnar portion 43 form a substrate support surface 44 that supports the substrate W on the upper surface of each table-like portion 41 (FIGS. 4B and 5A). ).

図１において、各台状部４１内には静電吸着用電極４６が内蔵されており、各静電吸着用電極４６は直流電源及び可変抵抗等を有して構成される直流電圧印加装置４７に接続されている。直流電圧印加装置４７はコントローラ１５より作動制御がなされて各静電吸着用電極４６に直流電圧を印加し、台状部４１に載置された基板Ｗを台状部４１の上面（基板支持面４４）に静電吸着する。   In FIG. 1, each electrostatic chucking electrode 46 is built in each table-like portion 41, and each electrostatic chucking electrode 46 includes a DC power source, a variable resistor, and the like, and a DC voltage application device 47 configured. It is connected to the. The DC voltage application device 47 is controlled by the controller 15 to apply a DC voltage to each electrostatic adsorption electrode 46, and the substrate W placed on the table-like portion 41 is placed on the upper surface (substrate support surface) of the table-like portion 41. 44).

図１及び図５において、昇降ピン７は基板サセプタ４を上下に貫通するように上下方向に延びて設けられており、コントローラ１５によって作動制御がなされる昇降ピン駆動装置５０により駆動されて同期して昇降し、その上端部を基板支持部材３３のトレイ載置面５の上方領域で突没させる。   In FIGS. 1 and 5, the elevating pins 7 are provided to extend in the vertical direction so as to penetrate the substrate susceptor 4, and are driven and synchronized by the elevating pin driving device 50 whose operation is controlled by the controller 15. The upper end of the substrate support member 33 is projected and subtracted in the upper region of the tray mounting surface 5.

図３及び図５（ａ）の拡大図において、トレイ６の下面側には上方に窪んだ複数（ここでは４つ）の昇降ピン嵌入穴５１が設けられている（図２（ａ），（ｂ）も参照）。これら昇降ピン嵌入穴５１は、基板サセプタ４に設けられた４つの昇降ピン７と同じ配置で設けられており、基板支持部材３３の上方に位置したトレイ６の４つの昇降ピン嵌入穴５１それぞれに各昇降ピン７の上端部を下方から嵌入させることにより、これら昇降ピン７に対して位置合わせした状態でトレイ６を支持することができる（図５（ａ））。   3 and 5A, a plurality of (here, four) elevating pin insertion holes 51 that are recessed upward are provided on the lower surface side of the tray 6 (FIGS. 2A and 2A). See also b)). These elevating pin insertion holes 51 are provided in the same arrangement as the four elevating pins 7 provided in the substrate susceptor 4, and are respectively provided in the four elevating pin insertion holes 51 of the tray 6 positioned above the substrate support member 33. By fitting the upper end portions of the elevating pins 7 from below, the tray 6 can be supported while being aligned with the elevating pins 7 (FIG. 5A).

ここで、図６（ａ）に示すように、昇降ピン嵌入穴５１の内壁面５１ａは下方に広がるテーパ形状に形成されている。このため、昇降ピン７の中心軸Ｊ１が昇降ピン嵌入穴５１の中心軸Ｊ２からずれた状態で昇降ピン７の上端部が昇降ピン嵌入穴５１内に入り込んだとしても、昇降ピン７の上端部は昇降ピン嵌入穴５１の内壁面５１ａに下方から当接した後（図６（ｂ））、昇降ピン嵌入穴５１の内壁面５１ａのテーパ形状に案内されて昇降ピン嵌入穴５１内への進入を続けるため、最終的には昇降ピン７の中心軸Ｊ１と昇降ピン嵌入穴５１の中心軸Ｊ２とが一致する状態で昇降ピン７の上端部は昇降ピン嵌入穴５１内に嵌入する（図６（ｃ））。   Here, as shown to Fig.6 (a), the inner wall surface 51a of the raising / lowering pin insertion hole 51 is formed in the taper shape which spreads below. For this reason, even if the upper end of the elevating pin 7 enters the elevating pin insertion hole 51 with the central axis J1 of the elevating pin 7 shifted from the central axis J2 of the elevating pin insertion hole 51, the upper end of the elevating pin 7 Is brought into contact with the inner wall surface 51a of the elevating pin insertion hole 51 from below (FIG. 6B) and then guided into the tapered shape of the inner wall surface 51a of the elevating pin insertion hole 51 to enter the elevating pin insertion hole 51. Therefore, the upper end of the lift pin 7 is finally inserted into the lift pin insertion hole 51 in a state where the center axis J1 of the lift pin 7 and the center axis J2 of the lift pin insertion hole 51 coincide (FIG. 6). (C)).

また、図３及び図５（ａ）の拡大図に示すように、トレイ６はトレイ６の下面側から下方に突出して設けられた複数（ここでは３つ）の突起５２を有しており（図２（ａ），（ｂ）も参照）、図４において、基板支持部材３３は、トレイ載置面５に下方に窪んで設けられた複数（ここでは３つ）の突起嵌入穴５３を有している。   As shown in the enlarged views of FIGS. 3 and 5A, the tray 6 has a plurality of (here, three) protrusions 52 that protrude downward from the lower surface side of the tray 6 ( 2 (see also FIGS. 2 (a) and 2 (b)), in FIG. 4, the substrate support member 33 has a plurality (three in this case) of protrusion insertion holes 53 provided in the tray mounting surface 5 so as to be depressed downward. is doing.

ここで、３つの突起嵌入穴５３は、３つの突起５２に対応する位置に設けられている。また、この３つの突起嵌入穴５３及び３つの突起５２は、等間隔（例えば１２０°）に配置された３点支持構造となっており、この３点支持によりトレイ６が傾きにくく、トレイ６の基板収容孔２１に収容された基板Ｗに位置ずれが生じにくい。このため、昇降ピン駆動装置５０によって昇降される昇降ピン７によってトレイ６がトレイ載置面５に載置される過程において、トレイ６の下面側に設けられた３つの突起５２のそれぞれは、対応する突起嵌入穴５３に上方から嵌入し、トレイ６にθ方向（水平面内における回転方向）のずれが生じている場合でも３つの突起５２がそれぞれ対応する突起嵌入穴５３に案内補正され、これによりトレイ６は基板支持部材３３上（トレイ載置面５）の正確な位置に載置される。このため基板収容孔２１は基板支持部材３３の台状部４１を確実に突き抜けることができる。   Here, the three protrusion insertion holes 53 are provided at positions corresponding to the three protrusions 52. Further, the three protrusion insertion holes 53 and the three protrusions 52 have a three-point support structure arranged at equal intervals (for example, 120 °). It is difficult for the substrate W accommodated in the substrate accommodation hole 21 to be displaced. For this reason, in the process in which the tray 6 is placed on the tray placing surface 5 by the raising and lowering pins 7 that are raised and lowered by the raising and lowering pin driving device 50, each of the three protrusions 52 provided on the lower surface side of the tray 6 corresponds to each other. 3 even when the tray 6 is displaced in the θ direction (rotation direction in the horizontal plane), the three protrusions 52 are guided and corrected to the corresponding protrusion insertion holes 53, respectively. The tray 6 is placed at an accurate position on the substrate support member 33 (tray placement surface 5). For this reason, the substrate accommodation hole 21 can penetrate through the base portion 41 of the substrate support member 33 with certainty.

すなわち基板支持部材３３は、トレイ載置面５にトレイ６が上方から載置される過程において台状部４１がトレイ６の基板収容孔２１を相対的に上方に突き抜けることによって、トレイ６の基板収容孔２１内に収容された基板Ｗを台状部４１によって相対的に上方に押し上げ、基板Ｗを張り出し部２２から上方に離間させた状態で台状部４１の上面（基板支持面４４）に支持するものとなっている。   That is, the substrate support member 33 is configured so that the base portion 41 penetrates the substrate receiving hole 21 of the tray 6 relatively upward in the process in which the tray 6 is placed on the tray placement surface 5 from above. The substrate W accommodated in the accommodation hole 21 is pushed upward relatively by the platform portion 41, and is placed on the upper surface (substrate support surface 44) of the platform portion 41 in a state where the substrate W is separated upward from the projecting portion 22. It is to support.

ここで、図７（ａ）に示すように、突起嵌入穴５３の内壁面５３ａは上方に広がるテーパ形状に形成されているため、突起５２の中心軸Ｊ３が突起嵌入穴５３の中心軸Ｊ４からずれた状態で突起５２が突起嵌入穴５３内に入り込んだとしても、突起５２は突起嵌入穴５３の内壁面５３ａに上方から当接した後（図７（ｂ））、突起嵌入穴５３の内壁面５３ａのテーパ形状に案内されて突起嵌入穴５３内への進入を続けるため、最終的には突起５２の中心軸Ｊ３と突起嵌入穴５３の中心軸Ｊ４とが一致する状態で突起５２は突起嵌入穴５３内に嵌入する（図７（ｃ））。   Here, as shown in FIG. 7A, the inner wall surface 53 a of the protrusion insertion hole 53 is formed in a tapered shape that spreads upward, so that the central axis J <b> 3 of the protrusion 52 extends from the central axis J <b> 4 of the protrusion insertion hole 53. Even if the protrusion 52 enters the protrusion insertion hole 53 in a shifted state, the protrusion 52 contacts the inner wall surface 53a of the protrusion insertion hole 53 from above (FIG. 7B), and then the inside of the protrusion insertion hole 53. Since the wall 53a is guided by the tapered shape and continues to enter the protrusion insertion hole 53, the protrusion 52 protrudes with the center axis J3 of the protrusion 52 and the center axis J4 of the protrusion insertion hole 53 finally matching. It inserts in the insertion hole 53 (FIG.7 (c)).

また、このプラズマ処理装置１では、トレイ６の張り出し部２２の基板Ｗを支持する支持面２２ａとトレイ６の下面側に設けられた突起５２の下端部との間の上下方向距離ｔ（図５（ａ）中の拡大図及び図６（ａ））は、トレイ載置面５と台状部４１の上面（基板支持面４４）との間の上下方向距離Ｈ（図５（ａ）の拡大図及び図７（ｃ））よりも大きくなるように寸法設定がなされている。また、トレイ載置面５と台状部４１の上面（基板支持面４４）との間の上下方向距離Ｈは、トレイ６の張り出し部２２の基板Ｗを支持する支持面２２ａとトレイ６の下面側の支持面２２ａの裏面との間の上下方向距離ｈ（図５（ａ）中の拡大図、図６（ａ）及び図７（ｃ））よりも大きくなるように寸法設定がなされている。   Further, in this plasma processing apparatus 1, the vertical distance t between the support surface 22 a that supports the substrate W of the projecting portion 22 of the tray 6 and the lower end portion of the protrusion 52 provided on the lower surface side of the tray 6 (FIG. 5). 6A and 6A are enlarged views of the vertical distance H between the tray placement surface 5 and the upper surface (substrate support surface 44) of the table-like portion 41 (FIG. 5A). The dimensions are set so as to be larger than those in FIG. 7 and FIG. Further, the vertical distance H between the tray placement surface 5 and the upper surface (substrate support surface 44) of the platform 41 is such that the support surface 22 a that supports the substrate W of the overhanging portion 22 of the tray 6 and the lower surface of the tray 6. The dimension is set to be larger than the vertical distance h (enlarged view in FIG. 5A, FIG. 6A and FIG. 7C) between the back surface of the support surface 22a on the side. .

図１及び図５において、下部電極３２内には冷媒流路６１が設けられており、この冷媒流路６１内には、コントローラ１５より作動制御がなされる冷媒循環装置６２より温度調節がなされた冷媒が供給される。   In FIG. 1 and FIG. 5, a refrigerant channel 61 is provided in the lower electrode 32, and the temperature is adjusted in the refrigerant channel 61 from a refrigerant circulation device 62 that is controlled by the controller 15. Refrigerant is supplied.

図１において、基板サセプタ４を構成するベース部３１、下部電極３２及び基板支持部材３３には、基板支持部材３３の上面（台状部４１に設けられた凹部４１ａ内）に開口する冷却ガス供給管路６３が設けられており（図４（ｂ）も参照）、コントローラ１５により作動制御がなされる冷却ガス供給装置６４より、基板冷却用のガス（例えばヘリウムガス）が、冷却ガス供給管路６３を通じて各台状部４１の凹部４１ａ内に供給される。   In FIG. 1, a base 31, a lower electrode 32, and a substrate support member 33 constituting the substrate susceptor 4 are supplied with a cooling gas that opens to the upper surface of the substrate support member 33 (inside the recess 41 a provided in the platform 41). A pipe 63 is provided (see also FIG. 4B), and a substrate cooling gas (for example, helium gas) is supplied from a cooling gas supply device 64 whose operation is controlled by the controller 15 to a cooling gas supply pipe. 63 is supplied into the recess 41 a of each table-like portion 41 through 63.

次に、このプラズマ処理装置１により複数の基板Ｗをバッチ処理により一括してプラズマ処理を施す手順について説明する。コントローラ１５は先ず、各基板収容孔２１に基板Ｗが収容されたトレイ６の外縁部をトレイ把持手段７０（図８（ａ））によって把持する。これは、コントローラ１５が、トレイ把持手段７０の駆動機構（図示せず）の作動制御
を行うことによって行う。 Next, a procedure for performing plasma processing on a plurality of substrates W by batch processing using the plasma processing apparatus 1 will be described. First, the controller 15 grips the outer edge portion of the tray 6 in which the substrates W are accommodated in the substrate accommodating holes 21 by the tray gripping means 70 (FIG. 8A). This is performed by the controller 15 controlling the operation of a drive mechanism (not shown) of the tray gripping means 70.

コントローラ１５は、トレイ把持手段７０によってトレイ６を把持したら、そのトレイ把持手段７０をチャンバ３の処理室２内に進入させてトレイ６を基板サセプタ４の上方に位置させる（図８（ａ））。そして、トレイ６の下面側に設けられた４つの昇降ピン嵌入穴５１が、基板サセプタ４に設けられた４つの昇降ピン７の上端部と上下に対向するようにトレイ６を基板支持部材３３に対して位置合わせする。   When the controller 15 grips the tray 6 by the tray gripping means 70, the controller 15 moves the tray gripping means 70 into the processing chamber 2 of the chamber 3 to position the tray 6 above the substrate susceptor 4 (FIG. 8A). . Then, the tray 6 is attached to the substrate support member 33 such that the four lifting pin insertion holes 51 provided on the lower surface side of the tray 6 are vertically opposed to the upper ends of the four lifting pins 7 provided in the substrate susceptor 4. Align with respect to.

コントローラ１５は、トレイ６を基板支持部材３３に対して位置合わせしたら、コントローラ１５から昇降ピン駆動装置５０を作動させて４つの昇降ピン７を上昇させ、各昇降ピン７の上端部をトレイ６の下面側の４つの昇降ピン嵌入穴５１に嵌入させる（図５（ａ）及び図８（ｂ））。これによりトレイ６は４つの昇降ピン７によって位置ずれなく支持される。また、これによりトレイ６の下面側に設けられた３つの突起５２は、基板支持部材３３の上面に設けられた３つの突起嵌入穴５３と上下に対向した状態となる。   When the controller 15 aligns the tray 6 with respect to the substrate support member 33, the controller 15 operates the lifting pin driving device 50 to raise the four lifting pins 7, and the upper end portion of each lifting pin 7 is connected to the tray 6. It is made to fit in the four raising / lowering pin insertion holes 51 of a lower surface side (FIG. 5 (a) and FIG.8 (b)). Accordingly, the tray 6 is supported by the four elevating pins 7 without being displaced. As a result, the three protrusions 52 provided on the lower surface side of the tray 6 are vertically opposed to the three protrusion insertion holes 53 provided on the upper surface of the substrate support member 33.

コントローラ１５は、トレイ６を４つの昇降ピン７によって支持したら、トレイ把持手段７０によるトレイ６の把持を解除してトレイ把持手段７０を処理室２から退去させ、チャンバ３に設けられた図示しない扉を閉止してチャンバ３（処理室２）を密閉状態にする。   When the controller 15 supports the tray 6 with the four lifting pins 7, the controller 15 releases the tray gripping means 70 from the processing chamber 2 by releasing the gripping of the tray 6 by the tray gripping means 70, and opens a door (not shown) provided in the chamber 3. To close the chamber 3 (processing chamber 2).

コントローラ１５は、チャンバ３を密閉状態にしたら、昇降ピン駆動装置５０を作動させて昇降ピン７を下降させ、トレイ６を基板支持部材３３のトレイ載置面５に載置させる。このトレイ６をトレイ載置面５に載置させる過程において、台状部４１はトレイ６の基板収容孔２１を相対的に上方に突き抜けることになるが、前述のように、トレイ載置面５と台状部４１の上面（基板支持面４４）との間の上下方向距離Ｈは、トレイ６の張り出し部２２の基板Ｗを支持する支持面２２ａとトレイ６の下面側の支持面２２ａの裏面との間の上下方向距離ｈよりも大きくなっているので、トレイ６の下面側の支持面２２ａの裏面がトレイ載置面５に接触する前に、基板Ｗの下面が台状部４１の上面（基板支持面４４）に接触する（図５（ｂ））。そして、トレイ６がその後も下降を続けることによって、トレイ６の下面側の支持面２２ａの裏面がトレイ載置面５に接触するが、基板Ｗは台状部４１によって相対的に上方に押し上げられるのでトレイ６とともには下降せず、外縁が張り出し部２２の上面から離間して台状部４１の上面（基板支持面４４）に支持された状態となる（図５（ｃ）及び図８（ｃ））。   When the chamber 3 is in a sealed state, the controller 15 operates the lift pin driving device 50 to lower the lift pins 7 and place the tray 6 on the tray placement surface 5 of the substrate support member 33. In the process of placing the tray 6 on the tray placing surface 5, the base portion 41 penetrates the substrate receiving hole 21 of the tray 6 relatively upward, but as described above, the tray placing surface 5. And the upper surface (substrate support surface 44) of the table-like portion 41 is a vertical distance H between the support surface 22a for supporting the substrate W of the overhanging portion 22 of the tray 6 and the back surface of the support surface 22a on the lower surface side of the tray 6. Therefore, before the back surface of the support surface 22a on the lower surface side of the tray 6 comes into contact with the tray mounting surface 5, the lower surface of the substrate W is the upper surface of the base portion 41. It contacts the (substrate support surface 44) (FIG. 5B). Then, as the tray 6 continues to descend thereafter, the back surface of the support surface 22a on the lower surface side of the tray 6 comes into contact with the tray mounting surface 5, but the substrate W is pushed upward relatively by the platform 41. Therefore, it does not descend together with the tray 6, and the outer edge is separated from the upper surface of the overhanging portion 22 and is supported on the upper surface (substrate support surface 44) of the base portion 41 (FIGS. 5C and 8C). )).

ここで、前述のように、トレイ６の張り出し部２２の基板Ｗを支持する支持面２２ａとトレイ６の下面側に設けられた突起５２の下端部との間の上下方向距離ｔは、トレイ載置面５と台状部４１の上面（基板支持面４４）との間の上下方向距離Ｈよりも大きくなっているので、トレイ６に収容された基板Ｗの下面が台状部４１の上面（基板支持面４４）と接触したときには（図５（ｂ））、突起５２は既に突起嵌入穴５３に嵌入を始めており（図９）、その後、トレイ６が降下してトレイ載置面５に接触するまでの過程において、突起５２は必ず突起嵌入穴５３内に入り込むことになる。このためトレイ６は基板支持部材３３上（トレイ載置面５）の正確な位置に載置される。   Here, as described above, the vertical distance t between the support surface 22a that supports the substrate W of the overhanging portion 22 of the tray 6 and the lower end portion of the protrusion 52 provided on the lower surface side of the tray 6 is the tray mounting amount. Since the vertical distance H between the mounting surface 5 and the upper surface (substrate support surface 44) of the table-like portion 41 is larger, the lower surface of the substrate W accommodated in the tray 6 is the upper surface ( When contacted with the substrate support surface 44 (FIG. 5B), the protrusion 52 has already started to be inserted into the protrusion insertion hole 53 (FIG. 9), and then the tray 6 is lowered to contact the tray placement surface 5 In the process up to this, the protrusion 52 is surely inserted into the protrusion insertion hole 53. For this reason, the tray 6 is placed at an accurate position on the substrate support member 33 (tray placement surface 5).

トレイ６を基板支持部材３３上（トレイ載置面５）に載置したら、コントローラ１５は直流電圧印加装置４７を作動させて各静電吸着用電極４６に直流電圧を印加し、各基板Ｗを台状部４１の上面（基板支持面４４）に静電吸着させる。これにより各基板Ｗは台状部４１上に固定される。   When the tray 6 is placed on the substrate support member 33 (tray placement surface 5), the controller 15 activates the DC voltage application device 47 to apply a DC voltage to each electrostatic chucking electrode 46, so that each substrate W is placed. It is electrostatically adsorbed to the upper surface (substrate support surface 44) of the base portion 41. Thereby, each substrate W is fixed on the table-like portion 41.

各基板Ｗを台状部４１の上面に静電吸着させたら、コントローラ１５は冷却ガス供給装置６４を作動させて冷却ガス供給管路６３から各台状部４１に設けられた凹部４１ａ内に
基板冷却用のガスを充填させる。コントローラ１５は、各台状部４１に設けられた凹部４１ａ内に基板冷却用のガスを充填させたら、ガス供給源１１の作動制御を行って処理室２内にプラズマ発生用のガスを供給し、高周波電圧印加装置１４の作動制御を行って誘電コイル１３に高周波電圧を印加するとともに、バイアス電圧印加装置３７の作動制御を行って下部電極３２にバイアス電圧を印加する。これにより処理室２内にプラズマが発生し、基板Ｗの表面がプラズマ処理される。 When each substrate W is electrostatically attracted to the upper surface of the table-like portion 41, the controller 15 operates the cooling gas supply device 64 to enter the substrate from the cooling gas supply line 63 into the recess 41a provided in each table-like portion 41. Fill with cooling gas. When the controller 15 fills the recess 41 a provided in each of the table-like portions 41 with the gas for cooling the substrate, the controller 15 controls the operation of the gas supply source 11 to supply the gas for generating plasma into the processing chamber 2. The high frequency voltage application device 14 is controlled to apply a high frequency voltage to the dielectric coil 13, and the bias voltage application device 37 is controlled to apply a bias voltage to the lower electrode 32. As a result, plasma is generated in the processing chamber 2 and the surface of the substrate W is subjected to plasma processing.

上記のプラズマ処理中、コントローラ１５は、冷媒循環装置６２の作動制御を行って冷媒流路６１内に冷媒を循環させて下部電極３２を冷却する。これにより下部電極３２を通じて基板Ｗが冷却され、基板冷却用のガスを通じた基板Ｗの冷却と相俟って、プラズマ処理効率が向上する。   During the plasma processing, the controller 15 controls the operation of the refrigerant circulation device 62 to circulate the refrigerant in the refrigerant flow path 61 and cool the lower electrode 32. As a result, the substrate W is cooled through the lower electrode 32, and combined with the cooling of the substrate W through the substrate cooling gas, the plasma processing efficiency is improved.

プラズマ処理が終了したら、コントローラ１５は高周波電圧印加装置１４による誘電コイル１３への高周波電圧の印加及びバイアス電圧印加装置３７による下部電極３２への高周波電圧の印加を停止したうえで、ガス供給源１１からの処理室２内へのガスの供給を停止するとともに、真空排気装置１２により処理室２内のガスをチャンバ３の外部に排気する。また、コントローラ１５は、冷却ガス供給装置６４による基板冷却用のガスの供給を停止し、直流電圧印加装置４７による静電吸着用電極４６への直流電圧の印加を停止して、基板Ｗの静電吸着を解除する。   When the plasma processing is completed, the controller 15 stops the application of the high frequency voltage to the dielectric coil 13 by the high frequency voltage application device 14 and the application of the high frequency voltage to the lower electrode 32 by the bias voltage application device 37, and then the gas supply source 11. Gas supply to the processing chamber 2 is stopped, and the gas in the processing chamber 2 is exhausted to the outside of the chamber 3 by the vacuum exhaust device 12. In addition, the controller 15 stops the supply of the substrate cooling gas by the cooling gas supply device 64, stops the application of the DC voltage to the electrostatic attraction electrode 46 by the DC voltage application device 47, Release electroadsorption.

基板Ｗの静電吸着を解除したら、コントローラ１５は昇降ピン駆動装置５０を作動させて４つの昇降ピン７を上昇させ、これら昇降ピン７によりトレイ６を基板支持部材３３の上方に持ち上げ支持する。４つの昇降ピン７はその上昇過程で上端部がトレイ６の下面側の昇降ピン嵌入穴５１内に下方から嵌入し、トレイ６の下面側に設けられた３つの突起５２はそれまで嵌入していた突起嵌入穴５３から上方に離脱する。   When the electrostatic attraction of the substrate W is released, the controller 15 operates the lifting pin driving device 50 to raise the four lifting pins 7, and the tray 6 is lifted and supported above the substrate support member 33 by these lifting pins 7. The upper and lower ends of the four elevating pins 7 are inserted into the elevating pin insertion holes 51 on the lower surface side of the tray 6 in the upward process, and the three protrusions 52 provided on the lower surface side of the tray 6 are inserted so far. The upper part is detached from the protrusion insertion hole 53.

昇降ピン７の上昇作動によりトレイ６を基板支持部材３３の上方に持ち上げ支持したら、コントローラ１５はチャンバ３の扉を開いてトレイ把持手段７０を処理室２内に進入させ、昇降ピン７によって持ち上げ支持されたトレイ６の外縁部をトレイ把持手段７０によって把持して処理室２から退去させる。これにより複数の基板Ｗの１回当たりのバッチ処理が終了する。   When the tray 6 is lifted and supported above the substrate support member 33 by the lifting operation of the lifting pins 7, the controller 15 opens the chamber 3 door and enters the tray gripping means 70 into the processing chamber 2, and lifts and supports the tray 6 by the lifting pins 7. The outer edge portion of the tray 6 is gripped by the tray gripping means 70 and moved away from the processing chamber 2. Thereby, batch processing per time of the plurality of substrates W is completed.

以上説明したように、本実施の形態におけるプラズマ処理装置１では、トレイ６がトレイ載置面５に載置される過程において、トレイ６の下面側から下方に突出して設けられた突起５２が、トレイ載置面５上に下方に窪んで設けられた突起嵌入穴５３に上方から嵌入するようにしており、本実施の形態のプラズマ処理装置１におけるトレイ６の載置方法では、トレイ６がトレイ載置面５に載置される過程で、トレイの下面側から下方に突出して設けられた突起５２を、トレイ載置面５に下方に窪んで設けられた突起嵌入穴５３に上方から嵌入させるようにしているので、トレイ６は基板支持部材３３上（トレイ載置面５上）の正確な位置に載置される。このため台状部４１とトレイ６は干渉せず、基板Ｗを基板支持部材３３上に正しい姿勢で支持することができるので、プラズマ処理における作業効率の低下を防止することができる。   As described above, in the plasma processing apparatus 1 according to the present embodiment, in the process in which the tray 6 is placed on the tray placing surface 5, the protrusion 52 provided to protrude downward from the lower surface side of the tray 6 is provided. In the method of placing the tray 6 in the plasma processing apparatus 1 according to the present embodiment, the tray 6 is inserted into the projection insertion hole 53 provided in a downwardly recessed manner on the tray placement surface 5. In the process of being placed on the placement surface 5, a protrusion 52 that protrudes downward from the lower surface side of the tray is inserted into a protrusion insertion hole 53 that is recessed downward on the tray placement surface 5 from above. Thus, the tray 6 is placed at an accurate position on the substrate support member 33 (on the tray placement surface 5). For this reason, the platform 41 and the tray 6 do not interfere with each other, and the substrate W can be supported on the substrate support member 33 in a correct posture, so that it is possible to prevent a reduction in work efficiency in plasma processing.

なお、本実施の形態では、突起５２及び突起嵌入穴５３は３組設けられていたが、少なくとも３組設けられていればよく、これによりトレイ６の基板支持部材３３の上面（トレイ載置面５）に対する安定した位置決めを行うことができる。また、本実施の形態では、昇降ピン７（ピン状部材）及び昇降ピン嵌入穴５１は４組設けられていたが、少なくとも３組設けられていればよく、これにより昇降ピン７によってトレイ６を安定的に支持することができる。   In the present embodiment, three sets of protrusions 52 and protrusion insertion holes 53 are provided. However, it is sufficient that at least three sets are provided, whereby the upper surface (tray mounting surface) of the substrate support member 33 of the tray 6 is sufficient. Stable positioning with respect to 5) can be performed. In the present embodiment, four sets of lifting pins 7 (pin-like members) and lifting pin insertion holes 51 are provided, but it is sufficient that at least three sets are provided. It can be supported stably.

また、本実施の形態では、突起５２及び突起嵌入穴５３から成る手段と、ピン状部材（昇降ピン７）及びピン状部材嵌入穴（昇降ピン嵌入穴５１）から成るトレイ６の位置決め手段が並存しており、両手段ともトレイ６を基板支持部材３３上の正確な位置に載置する効果を発揮していたが、どちらか一方のみの手段を用いるようにしても構わない。   In the present embodiment, means comprising the protrusion 52 and the protrusion insertion hole 53 and positioning means for the tray 6 including the pin-like member (elevating pin 7) and the pin-like member insertion hole (elevating pin insertion hole 51) coexist. However, both means exerted the effect of placing the tray 6 at an accurate position on the substrate support member 33, but only one of the means may be used.

すなわち、プラズマ処理装置１は、基板支持部材３３に対してトレイ６を昇降させ、トレイ６のトレイ載置面５上への載置及びトレイ６のトレイ載置面５からの離間を行うトレイ昇降手段を備えており、このトレイ昇降手段が、トレイ載置面５から上方に延びた部分が同期して昇降する複数のピン状部材（昇降ピン７）から成り、トレイ６の下面側には各ピン状部材の上端部が嵌入するピン状部材嵌入穴５１が設けられていればよい。また、プラズマ処理装置１におけるトレイ６の載置方法では、基板支持部材３３に対してトレイ６を昇降させ、トレイ６のトレイ載置面５上への載置及びトレイ６のトレイ載置面５からの離間を行うトレイ昇降手段を、トレイ載置面５から上方に延びた部分が同期して昇降する複数のピン状部材（昇降ピン７）から構成し、これら複数のピン状部材の上端部を、トレイ６の下面側に設けられたピン状部材嵌入穴５１に嵌入させるようにしていればよい。   That is, the plasma processing apparatus 1 raises and lowers the tray 6 with respect to the substrate support member 33, and raises and lowers the tray 6 to place the tray 6 on the tray placement surface 5 and separate the tray 6 from the tray placement surface 5. The tray elevating means is composed of a plurality of pin-like members (elevating pins 7) that move upward and downward synchronously with the portion extending upward from the tray mounting surface 5. The pin-shaped member insertion hole 51 into which the upper end portion of the pin-shaped member is inserted may be provided. Further, in the method for placing the tray 6 in the plasma processing apparatus 1, the tray 6 is moved up and down with respect to the substrate support member 33 to place the tray 6 on the tray placement surface 5 and the tray placement surface 5 of the tray 6. The tray lifting / lowering means that separates from the tray is composed of a plurality of pin-shaped members (lifting pins 7) whose portions extending upward from the tray mounting surface 5 are moved up and down synchronously, and upper end portions of the plurality of pin-shaped members May be inserted into the pin-like member insertion hole 51 provided on the lower surface side of the tray 6.

上述の説明では、台状部４１は基板Ｗの外径Ｒ０よりも１〜３ｍｍ程度小さい外径を有するとしていたが、図１０、図１１及び図１２に示すように、トレイ６の基板収容孔２１の内壁に、内方に張り出した突起状の張り出し部２２ｔを周方向に所定間隔あけて複数（少なくとも３つ）設けるとともに、台状部４１の外周部には上記突起状の張り出し部２２ｔを収容する収容溝４２ｍを設けることにより、台状部４１の外径と基板Ｗの外径Ｒ０を実質的に揃えるようにすることができる。このような構成では、基板Ｗを外周部の端まで台状部４１で支持することができるので、基板Ｗの冷却を効率よく行うことができる。   In the above description, the base portion 41 has an outer diameter that is about 1 to 3 mm smaller than the outer diameter R0 of the substrate W. However, as shown in FIGS. A plurality of (at least three) projecting projecting portions 22t projecting inward are provided on the inner wall 21 at predetermined intervals in the circumferential direction, and the projecting projecting projecting portions 22t are provided on the outer peripheral portion of the base-shaped portion 41. By providing the accommodating groove 42m for accommodating, the outer diameter of the base portion 41 and the outer diameter R0 of the substrate W can be substantially aligned. In such a configuration, since the substrate W can be supported by the base portion 41 up to the end of the outer peripheral portion, the substrate W can be efficiently cooled.

なお、このような構成を採用した場合、トレイ６の基板収容孔２１の内壁に設けた複数の張り出し部２２ｔは台状部４１の外周部に設けた複数の収容溝４２ｍに上方から嵌入する構造となるため、θ方向のトレイ６の高い位置決め精度が必要となるが、本実施の形態におけるプラズマ処理装置１では前述のように、トレイ６の位置決めを高精度に行うことができるのでその点問題はなく、各突起状の張り出し部２２ｔを対応する台状部４１の収容溝４２ｍに確実に嵌入させて、基板Ｗを台状部４１支持させることができる（図１３参照）。   When such a configuration is adopted, the plurality of projecting portions 22t provided on the inner wall of the substrate accommodation hole 21 of the tray 6 are fitted into the plurality of accommodation grooves 42m provided on the outer peripheral portion of the base-like portion 41 from above. Therefore, a high positioning accuracy of the tray 6 in the θ direction is required. However, in the plasma processing apparatus 1 according to the present embodiment, as described above, the tray 6 can be positioned with high accuracy. Rather, each protrusion-like protruding portion 22t can be securely fitted into the receiving groove 42m of the corresponding base-like portion 41 to support the substrate W (see FIG. 13).

処理対象物を支持部材上の正確な位置に載置して処理対象物を支持部材上に正しい姿勢で支持することができるようにしたプラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法を提供する。   Provided are a plasma processing apparatus and a method for placing a tray in the plasma processing apparatus, in which the processing object is placed at an accurate position on the support member so that the processing object can be supported on the support member in a correct posture. To do.

１ プラズマ処理装置
５ トレイ載置面
６ トレイ
７ 昇降ピン（トレイ昇降手段、ピン状部材）
２１ 基板収容孔（収容孔）
２２ 張り出し部
２２ａ 支持面
３３ 基板支持部材（支持部材）
４１ 台状部
４４ 基板支持面（台状部の上面）
５１ 昇降ピン嵌入穴（ピン状部材嵌入穴）
５１ａ 昇降ピン嵌入穴の内壁面（ピン状部材嵌入穴の内壁面）
５２ 突起
５３ 突起嵌入穴
５３ａ 突起嵌入穴の内壁面
Ｗ 基板（処理対象物） DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus 5 Tray mounting surface 6 Tray 7 Elevating pin (tray elevating means, pin-shaped member)
21 Substrate accommodation hole (accommodation hole)
22 Overhanging portion 22a Support surface 33 Substrate support member (support member)
41 platform 44 substrate support surface (upper surface of platform)
51 Elevating pin insertion hole (pin-shaped member insertion hole)
51a Inner wall surface of elevating pin insertion hole (inner wall surface of pin-like member insertion hole)
52 Projection 53 Projection insertion hole 53a Inner wall surface of projection insertion hole W Substrate (object to be processed)

Claims (7)

厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイと、
トレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材と、
支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段と、
トレイの下面 側から下方に突出して設けられた突起と、
トレイ載置面に下方に窪んで設けられ、トレイ昇降手段によってトレイがトレイ載置面に載置される過程で前記突起が上方から嵌入する突起嵌入穴とを備え、
トレイの張り出し部の処理対象物を支持する支持面と前記突起の下端部との間の上下方向距離は、トレイ載置面と台状部の上面との間の上下方向距離よりも大きいことを特徴とするプラズマ処理装置。 It has an accommodation hole provided penetrating in the thickness direction, and supports the outer edge of the object to be processed from below by an overhanging portion that projects from the inner periphery of the accommodation hole to the inside of the accommodation hole. A tray for storing the object inside the receiving hole;
A tray mounting surface on which the tray is mounted, and a table-shaped portion provided so as to protrude upward from the tray mounting surface, and the table-shaped portion in the process of mounting the tray on the tray mounting surface from above Pierce the tray receiving hole relatively upward, so that the processing object accommodated in the tray receiving hole is pushed upward relatively by the platform, and the processing object is separated upward from the overhanging part. A supporting member that supports the upper surface of the base portion in a state of being
Tray raising and lowering means for raising and lowering the tray with respect to the support member, placing the tray on the tray placement surface, and separating the tray from the tray placement surface;
A protrusion provided to protrude downward from the lower surface side of the tray;
A projection insertion hole provided in the tray placement surface that is recessed downward, and the projection is inserted from above in the process of placing the tray on the tray placement surface by the tray lifting means ,
The vertical distance between the support surface that supports the object to be processed in the protruding portion of the tray and the lower end portion of the protrusion is larger than the vertical distance between the tray placement surface and the upper surface of the table-shaped portion. A plasma processing apparatus. 厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイと、
トレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材と、
支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段と、
トレイの下面 側から下方に突出して設けられた突起と、
トレイ載置面に下方に窪んで設けられ、トレイ昇降手段によってトレイがトレイ載置面に載置される過程で前記突起が上方から嵌入する突起嵌入穴とを備え、
トレイ昇降手段はトレイ載置面から上方に延びた部分が同期して昇降する複数のピン状部材から成り、トレイの下面側には各ピン状部材の上端部が嵌入するピン状部材嵌入穴が設けられていることを特徴とするプラズマ処理装置。 It has an accommodation hole provided penetrating in the thickness direction, and supports the outer edge of the object to be processed from below by an overhanging portion that projects from the inner periphery of the accommodation hole to the inside of the accommodation hole. A tray for storing the object inside the receiving hole;
A tray mounting surface on which the tray is mounted, and a table-shaped portion provided so as to protrude upward from the tray mounting surface, and the table-shaped portion in the process of mounting the tray on the tray mounting surface from above Pierce the tray receiving hole relatively upward, so that the processing object accommodated in the tray receiving hole is pushed upward relatively by the platform, and the processing object is separated upward from the overhanging part. A supporting member that supports the upper surface of the base portion in a state of being
Tray raising and lowering means for raising and lowering the tray with respect to the support member, placing the tray on the tray placement surface, and separating the tray from the tray placement surface;
A protrusion provided to protrude downward from the lower surface side of the tray;
A projection insertion hole provided in the tray placement surface that is recessed downward, and the projection is inserted from above in the process of placing the tray on the tray placement surface by the tray lifting means,
The tray lifting / lowering means is composed of a plurality of pin-shaped members whose portions extending upward from the tray mounting surface move up and down in synchronization, and pin-shaped member insertion holes into which the upper ends of the respective pin-shaped members are fitted on the lower surface side of the tray. it is provided, wherein the to pulp plasma processing apparatus. 前記突起嵌入穴の内壁面は上方に広がるテーパ形状に形成されていることを特徴とする請求項１又は２に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein an inner wall surface of the protrusion insertion hole is formed in a tapered shape that spreads upward. 前記突起及び前記突起嵌入穴は少なくとも３組設けられていることを特徴とする請求項１乃至３の何れかに記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein at least three sets of the protrusions and the protrusion insertion holes are provided. 厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイと、
トレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材と、
支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段とを備え、
トレイ昇降手段はトレイ載置面から上方に延びた部分が同期して昇降する複数のピン状部材から成り、トレイの下面側には各ピン状部材の上端部が嵌入するピン状部材嵌入穴が設けられていることを特徴とするプラズマ処理装置。 It has an accommodation hole provided penetrating in the thickness direction, and supports the outer edge of the object to be processed from below by an overhanging portion that projects from the inner periphery of the accommodation hole to the inside of the accommodation hole. A tray for storing the object inside the receiving hole;
A tray mounting surface on which the tray is mounted, and a table-shaped portion provided so as to protrude upward from the tray mounting surface, and the table-shaped portion in the process of mounting the tray on the tray mounting surface from above Pierce the tray receiving hole relatively upward, so that the processing object accommodated in the tray receiving hole is pushed upward relatively by the platform, and the processing object is separated upward from the overhanging part. A supporting member that supports the upper surface of the base portion in a state of being
A tray raising / lowering means for raising and lowering the tray with respect to the support member, placing the tray on the tray placement surface, and separating the tray from the tray placement surface;
The tray lifting / lowering means is composed of a plurality of pin-shaped members whose portions extending upward from the tray mounting surface move up and down in synchronization, and pin-shaped member insertion holes into which the upper ends of the respective pin-shaped members are fitted on the lower surface side of the tray. A plasma processing apparatus is provided. 前記ピン状部材嵌入穴の内壁面は下方に広がるテーパ形状に形成されていることを特徴とする請求項２又は５に記載のプラズマ処理装置。 The plasma processing apparatus according to claim 2 or 5 the inner wall surface of the pin-like member insertion hole is characterized in that it is formed in a tapered shape spreading downward. 厚さ方向に貫通して設けられた収容孔を有し、収容孔の内周部から収容孔の内方に張り出して設けられた張り出し部により処理対象物の外縁を下方から支持してその処理対象物を収容孔の内部に収容するトレイを、このトレイが載置されるトレイ載置面及びトレイ載置面から上方に突出して設けられた台状部を有して成り、トレイ載置面にトレイが上方から載置される過程で台状部がトレイの収容孔を相対的に上方に突き抜けることによって、トレイの収容孔内に収容された処理対象物を台状部によって相対的に上方に押し上げ、処理対象物を張り出し部から上方に離間させた状態で台状部の上面に支持する支持部材に載置するプラズマ処理装置におけるトレイの載置方法であって、
支持部材に対してトレイを昇降させ、トレイのトレイ載置面上への載置及びトレイのトレイ載置面からの離間を行うトレイ昇降手段を、トレイ載置面から上方に延びた部分が同期して昇降する複数のピン状部材から構成し、これら複数のピン状部材の上端部を、トレイの下面側に設けられたピン状部材嵌入穴に嵌入させるようにしたことを特徴とするプラズマ処理装置におけるトレイの載置方法。 It has an accommodation hole provided penetrating in the thickness direction, and supports the outer edge of the object to be processed from below by an overhanging portion that projects from the inner periphery of the accommodation hole to the inside of the accommodation hole. A tray for storing a target object inside the receiving hole has a tray mounting surface on which the tray is mounted, and a platform portion provided so as to protrude upward from the tray mounting surface. When the tray is placed on the tray from above, the platform portion penetrates the tray accommodation hole relatively upward, so that the processing object accommodated in the tray accommodation hole is relatively elevated by the platform portion. A mounting method of a tray in a plasma processing apparatus that is mounted on a support member that is supported on an upper surface of a table-shaped portion in a state where the object to be processed is spaced upward from the overhanging portion,
The tray elevating means that moves the tray up and down relative to the support member and places the tray on the tray placement surface and separates the tray from the tray placement surface is synchronized with the portion extending upward from the tray placement surface. And a plurality of pin-like members that move up and down, and the upper ends of the plurality of pin-like members are inserted into pin-like member insertion holes provided on the lower surface side of the tray. A tray mounting method in the apparatus.
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