JP5037505B2 - 低濡れヒステリシスポリシロキサン系材料およびその堆積方法 - Google Patents
低濡れヒステリシスポリシロキサン系材料およびその堆積方法 Download PDFInfo
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- JP5037505B2 JP5037505B2 JP2008518916A JP2008518916A JP5037505B2 JP 5037505 B2 JP5037505 B2 JP 5037505B2 JP 2008518916 A JP2008518916 A JP 2008518916A JP 2008518916 A JP2008518916 A JP 2008518916A JP 5037505 B2 JP5037505 B2 JP 5037505B2
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- polysiloxane
- wetting hysteresis
- precursor
- plasma
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (8)
- 直鎖状−Si−O−結合数と環状−Si−O−結合数との比が0.4以下のポリシロキサン系材料であることを特徴とする、低濡れヒステリシス材料。
- 直鎖状−Si−O−結合数と環状−Si−O−結合数との比が0.3以下である、請求項1に記載の低濡れヒステリシス材料。
- 前記濡れヒステリシスが10°未満である、請求項1または2に記載の低濡れヒステリシス材料。
- 前記濡れヒステリシスが5°未満である、請求項3に記載の低濡れヒステリシス材料。
- 請求項1〜4のいずれか一項に記載の低濡れヒステリシス材料を堆積させる方法であって、
ポリシロキサン系材料の堆積をプラズマ強化化学蒸着により行い、その際、環状オルガノシロキサンおよび環状オルガノシラザンから選択された前駆物質を注入し、前記プラズマ中に消散する電力密度と、前記プラズマ中に注入される前記前駆物質の流量との比が100W.cm−2/mol.min−1以下であることを特徴とする、方法。 - 前記前駆物質が、オクタメチルシクロテトラシロキサンおよびその誘導体から選択される、請求項5に記載の堆積方法。
- 前記前駆物質が、オクタメチルシクロシラザンおよびその誘導体から選択される、請求項5に記載の堆積方法。
- 前記前駆物質が、前記プラズマ中に注入される前に、ヘリウムで希釈される、請求項5〜7のいずれか一項に記載の堆積方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0507024 | 2005-07-01 | ||
FR0507024A FR2887891B1 (fr) | 2005-07-01 | 2005-07-01 | Materiau a base de polysiloxane et a faible hysteresis de mouillage et procede de depot d'un tel materiau. |
PCT/FR2006/001492 WO2007003754A1 (fr) | 2005-07-01 | 2006-06-27 | Matériau à base de polysiloxane et à faible hystérésis de mouillage et procédé de dépôt d'un tel matériau |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008545037A JP2008545037A (ja) | 2008-12-11 |
JP5037505B2 true JP5037505B2 (ja) | 2012-09-26 |
Family
ID=36102999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008518916A Expired - Fee Related JP5037505B2 (ja) | 2005-07-01 | 2006-06-27 | 低濡れヒステリシスポリシロキサン系材料およびその堆積方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20090081384A1 (ja) |
EP (1) | EP1910486A1 (ja) |
JP (1) | JP5037505B2 (ja) |
FR (1) | FR2887891B1 (ja) |
WO (1) | WO2007003754A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8474306B1 (en) * | 2009-06-05 | 2013-07-02 | University Of Northern Iowa Research Foundation | Method and apparatus for measurement of fluid properties |
FR2946658B1 (fr) * | 2009-06-11 | 2011-08-05 | Commissariat Energie Atomique | Dispositif microfluidique comportant deux couches hydrophobes assemblees l'une a l'autre et procede d'assemblage |
CN107105824A (zh) * | 2014-10-16 | 2017-08-29 | 欧洲等离子公司 | 具有改善的穿戴舒适度的鞋靴制品的制造方法和根据该方法制造的鞋靴制品 |
BR112017008787A2 (pt) | 2014-10-28 | 2017-12-26 | 3M Innovative Properties Co | componentes de um sistema de aplicação de aspersões que compreende uma superfície repelente & métodos |
JP6873122B2 (ja) * | 2015-10-28 | 2021-05-19 | スリーエム イノベイティブ プロパティズ カンパニー | 撥性表面を含むスプレー塗布システム構成要素及び方法 |
CN108350290B (zh) | 2015-10-28 | 2021-10-15 | 3M创新有限公司 | 包括拒斥性表面的经历冰形成的制品 |
WO2017189475A1 (en) * | 2016-04-26 | 2017-11-02 | 3M Innovative Properties Company | Articles subject to ice formation comprising a repellent surface comprising a siloxane material |
CN109675776A (zh) * | 2017-10-18 | 2019-04-26 | 上海稷以科技有限公司 | 在物体表面形成保护层的方法及表面形成有保护层的产品 |
US20220338768A1 (en) | 2021-04-09 | 2022-10-27 | Medtronic Minimed, Inc. | Hexamethyldisiloxane membranes for analyte sensors |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041637B2 (ja) * | 1980-12-08 | 1985-09-18 | ト−レ・シリコ−ン株式会社 | 無機質吸水性建材の撥水処理方法 |
JP3589679B2 (ja) * | 1992-09-21 | 2004-11-17 | 多摩化学工業株式会社 | 建築材料用表面処理剤 |
JP2851505B2 (ja) * | 1993-02-26 | 1999-01-27 | 信越化学工業株式会社 | シリコーン系防水処理剤およびこれによる防水処理方法 |
US5359109A (en) * | 1993-06-16 | 1994-10-25 | Osi Specialties, Inc. | Surface-active siloxane coating compounds and their use in coatings |
TW437017B (en) * | 1998-02-05 | 2001-05-28 | Asm Japan Kk | Silicone polymer insulation film on semiconductor substrate and method for formation thereof |
US6881683B2 (en) * | 1998-02-05 | 2005-04-19 | Asm Japan K.K. | Insulation film on semiconductor substrate and method for forming same |
JP3938431B2 (ja) * | 1998-03-12 | 2007-06-27 | 大日本印刷株式会社 | 撥水性コーティング膜の製造方法 |
US6068884A (en) * | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
US20040253777A1 (en) * | 2001-08-30 | 2004-12-16 | Hidenori Miyoshi | Method and apparatus for forming film |
JP2003113244A (ja) * | 2001-10-03 | 2003-04-18 | Shin Etsu Chem Co Ltd | パーフルオロポリエーテル変性シクロポリシロキサン及び表面処理剤並びに硬化被膜を形成した物品 |
US7071277B2 (en) * | 2001-10-16 | 2006-07-04 | The University Of Akron | Poly(cyclosiloxane) composition and synthesis |
JP2003206477A (ja) * | 2002-01-10 | 2003-07-22 | Toyo Riken Kk | 超撥水剤組成物 |
JP4217870B2 (ja) * | 2002-07-15 | 2009-02-04 | 日本電気株式会社 | 有機シロキサン共重合体膜、その製造方法、成長装置、ならびに該共重合体膜を用いた半導体装置 |
TWI282124B (en) * | 2002-11-28 | 2007-06-01 | Tosoh Corp | Insulating film material containing an organic silane compound, its production method and semiconductor device |
US20040253378A1 (en) * | 2003-06-12 | 2004-12-16 | Applied Materials, Inc. | Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes |
CN100446193C (zh) * | 2004-02-13 | 2008-12-24 | 松下电器产业株式会社 | 有机无机混合绝缘膜的形成方法 |
EP2256123B1 (en) * | 2005-01-31 | 2013-08-14 | Tosoh Corporation | Cyclic siloxane compound, a material for forming Si-containing film, and its use |
-
2005
- 2005-07-01 FR FR0507024A patent/FR2887891B1/fr not_active Expired - Fee Related
-
2006
- 2006-06-27 WO PCT/FR2006/001492 patent/WO2007003754A1/fr not_active Application Discontinuation
- 2006-06-27 EP EP06778687A patent/EP1910486A1/fr not_active Withdrawn
- 2006-06-27 JP JP2008518916A patent/JP5037505B2/ja not_active Expired - Fee Related
- 2006-06-27 US US11/922,421 patent/US20090081384A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
FR2887891B1 (fr) | 2007-09-21 |
JP2008545037A (ja) | 2008-12-11 |
WO2007003754A1 (fr) | 2007-01-11 |
US20090081384A1 (en) | 2009-03-26 |
EP1910486A1 (fr) | 2008-04-16 |
FR2887891A1 (fr) | 2007-01-05 |
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