JP5031079B2 - Switchgear - Google Patents

Switchgear Download PDF

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JP5031079B2
JP5031079B2 JP2010223713A JP2010223713A JP5031079B2 JP 5031079 B2 JP5031079 B2 JP 5031079B2 JP 2010223713 A JP2010223713 A JP 2010223713A JP 2010223713 A JP2010223713 A JP 2010223713A JP 5031079 B2 JP5031079 B2 JP 5031079B2
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main circuit
circuit conductor
insulating barrier
curved surface
recess
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JP2011004600A (en
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忠広 吉田
正博 有岡
暁 吉田
伸治 佐藤
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Description

この発明は、電力の送配電及び受電設備などに用いられるスイッチギヤ、特にその内部に配設される主回路導体及びその電界緩和手段に関するものである。   The present invention relates to a switchgear used in power transmission / distribution and power receiving facilities, and more particularly to a main circuit conductor disposed therein and an electric field relaxation means thereof.

従来のスイッチギヤにおける主回路導体及びその電界緩和手段である絶縁層は図１０に示す構成とされていた。この図は、三相分の主回路導体のうち二相分の主回路導体２５を示すもので、紙面と直角方向に主回路導体２５が延びている状態を示している。   The main circuit conductor in the conventional switchgear and the insulating layer as the electric field relaxation means have the configuration shown in FIG. This figure shows the main circuit conductor 25 for two phases among the main circuit conductors for three phases, and shows a state in which the main circuit conductor 25 extends in a direction perpendicular to the paper surface.

各主回路導体２５は所定の間隔を保って配設されると共に、各主回路導体２５の先端部は曲面とされ、それぞれの曲面部には絶縁層２６が設けられている。また、主回路導体２５の中間位置には絶縁バリヤ２７が設置され、接地金属容器１０に固定されている。   Each main circuit conductor 25 is disposed at a predetermined interval, and the front end portion of each main circuit conductor 25 is a curved surface, and an insulating layer 26 is provided on each curved surface portion. An insulation barrier 27 is installed at an intermediate position of the main circuit conductor 25 and is fixed to the ground metal container 10.

このような構成とすることにより、主回路導体２５間の絶縁特性が向上し、絶縁バリヤなしの場合にはSF6ガスを封入していたスイッチギヤと同程度のスイッチギヤを乾燥空気
封入で構成することが可能となっていた。（例えば特許文献１参照）。 By adopting such a configuration, the insulation characteristics between the main circuit conductors 25 are improved, and when there is no insulation barrier, a switch gear similar to the switch gear in which the SF6 gas is sealed is sealed with dry air. It was possible. (For example, refer to Patent Document 1).

特開２０００−３４１８１６号公報JP 2000-341816 A

従来のスイッチギヤは上記のように構成され、主回路導体２５の先端の曲面部に絶縁層２６を主回路導体２５に密着するように形成していたため、絶縁層２６の形成に注型等の加工が必要であり、絶縁層２６を形成するためのコストが高くなるという問題点があった。   The conventional switchgear is configured as described above, and the insulating layer 26 is formed on the curved surface at the tip of the main circuit conductor 25 so as to be in close contact with the main circuit conductor 25. There is a problem that processing is necessary and the cost for forming the insulating layer 26 is increased.

また、主回路導体２５間に設置した絶縁バリヤ２７の端部がエッジ形状とされていることから、主回路導体２５の外径に対して絶縁バリヤの端部までの距離ｈがあまり大きくない場合には、絶縁バリヤ２７の端部におけるエッジ部周辺が高電界となる結果、耐電圧性能を低下させないようにするためには絶縁バリヤ２７を大きくしてｈを大きくする必要があるためスイッチギヤの小型化が困難になるという問題点もあった。   In addition, since the end of the insulation barrier 27 installed between the main circuit conductors 25 has an edge shape, the distance h to the end of the insulation barrier is not so large with respect to the outer diameter of the main circuit conductor 25. As a result of the high electric field around the edge portion at the end of the insulating barrier 27, it is necessary to increase the insulating barrier 27 and h to prevent the breakdown voltage performance from deteriorating. There was also a problem that miniaturization became difficult.

この発明は上記のような問題点に対処するためになされたもので、主回路導体の絶縁層の形成に注型等の加工を必要とせず、また、主回路導体の耐電圧性能を向上することができるスイッチギヤを提供することを目的とする。   The present invention has been made to cope with the above-described problems, and does not require casting or the like for forming the insulating layer of the main circuit conductor, and improves the withstand voltage performance of the main circuit conductor. An object of the present invention is to provide a switchgear that can be used.

この発明に係るスイッチギヤは、接地金属容器内に封入された絶縁性ガス中に配設され、先端部に曲面が形成された主回路導体と、この主回路導体との間に空隙を形成して上記曲面全体を覆う絶縁バリヤとを備え、上記絶縁バリヤの端部に絶縁バリヤの厚みの１／２以下の曲率を有する曲面を形成したものである。   The switchgear according to the present invention is disposed in an insulating gas sealed in a ground metal container, and forms a gap between the main circuit conductor having a curved surface at the tip and the main circuit conductor. And an insulating barrier that covers the entire curved surface, and a curved surface having a curvature of 1/2 or less of the thickness of the insulating barrier is formed at the end of the insulating barrier.

この発明に係るスイッチギヤは上記のように構成され、主回路導体の先端部に曲面を形成して主回路導体表面における電界を低減すると共に、上記曲面に沿って曲面全体を覆う絶縁バリヤを設けることにより、主回路導体表面から他への閃絡を抑制し、また、絶縁バリヤの端部に絶縁バリヤの厚みの１／２以下の曲率を有する曲面を形成することにより、絶縁バリヤ端部における電界を低減し、耐電圧性能を向上することができる。   The switchgear according to the present invention is configured as described above, and a curved surface is formed at the front end portion of the main circuit conductor to reduce the electric field on the surface of the main circuit conductor, and an insulating barrier covering the entire curved surface is provided along the curved surface. By suppressing the flashing from the surface of the main circuit conductor to the other, and forming a curved surface having a curvature of 1/2 or less of the thickness of the insulating barrier at the end of the insulating barrier, The electric field can be reduced and the withstand voltage performance can be improved.

更に、絶縁バリヤで覆われていない部位の主回路導体の外径を、絶縁バリヤで覆われた部位の主回路導体の外径より小さくしているため、絶縁バリヤ端部における電界を低減し、耐電圧性能を向上することができる。   Furthermore, since the outer diameter of the main circuit conductor in the portion not covered with the insulating barrier is made smaller than the outer diameter of the main circuit conductor in the portion covered with the insulating barrier, the electric field at the end of the insulating barrier is reduced, Withstand voltage performance can be improved.

更にまた、絶縁バリヤの内側面または外側面を主回路導体の直径方向に延びる第１の平面と、主回路導体の延長方向に延びる第２の平面とから構成し、第１の平面と第２の平面とを主回路導体の曲面の曲率より小さな曲率の曲面で結合するようにしているため、耐電圧性能の向上を図ることが可能となる。   Furthermore, the inner surface or the outer surface of the insulation barrier is composed of a first plane extending in the diametrical direction of the main circuit conductor and a second plane extending in the extending direction of the main circuit conductor, and the first plane and the second plane With the curved surface having a curvature smaller than that of the curved surface of the main circuit conductor, the withstand voltage performance can be improved.

また、絶縁バリヤをテフロン（登録商標）やポリカーボネイトなどの比誘電率が３以下の絶縁材料で構成しているため、絶縁バリヤの表面空間の電界を低減することができ、耐電圧性能を向上することができる。   In addition, since the insulating barrier is made of an insulating material having a relative dielectric constant of 3 or less, such as Teflon (registered trademark) or polycarbonate, the electric field in the surface space of the insulating barrier can be reduced, and the withstand voltage performance is improved. be able to.

また、絶縁バリヤには主回路導体にねじ込み可能な雄ねじ等を形成したため、主回路導体と絶縁バリヤとを確実に強固に結合することができ、かつ、結合部における高電界を抑制することができるため、耐電圧性能の向上を図ることができる。   In addition, since the insulation barrier is formed with a male screw or the like that can be screwed into the main circuit conductor, the main circuit conductor and the insulation barrier can be securely and firmly coupled, and a high electric field at the coupling portion can be suppressed. Therefore, the withstand voltage performance can be improved.

この発明の実施の形態１によるスイッチギヤの主要部を構成する主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。BRIEF DESCRIPTION OF THE DRAWINGS The structure of the main circuit conductor etc. which comprise the principal part of the switchgear by Embodiment 1 of this invention is shown, (a) is the schematic which shows the structure of a main circuit conductor and an insulation barrier, (b) is (a It is a figure which shows the electric potential distribution in the structure of (). この発明の実施の形態２によるスイッチギヤの主要部を構成する主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。FIG. 2 shows a configuration of main circuit conductors and the like constituting a main part of a switchgear according to Embodiment 2 of the present invention, wherein (a) is a schematic diagram showing configurations of a main circuit conductor and an insulation barrier, and (b) is (a). It is a figure which shows the electric potential distribution in the structure of (). この発明の実施の形態３によるスイッチギヤの主要部を構成する主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。FIG. 3 shows a configuration of main circuit conductors and the like constituting a main part of a switchgear according to Embodiment 3 of the present invention, in which (a) is a schematic diagram showing configurations of a main circuit conductor and an insulation barrier, and (b) is (a). It is a figure which shows the electric potential distribution in the structure of (). この発明の実施の形態４によるスイッチギヤの主要部を構成する主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。FIG. 7 shows the configuration of main circuit conductors and the like constituting the main part of a switchgear according to Embodiment 4 of the present invention, wherein (a) is a schematic diagram showing the configurations of the main circuit conductor and the insulation barrier, and (b) is (a). It is a figure which shows the electric potential distribution in the structure of (). この発明の実施の形態５によるスイッチギヤの主要部を構成する主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。FIG. 7 shows a configuration of main circuit conductors and the like constituting the main part of a switchgear according to Embodiment 5 of the present invention, in which (a) is a schematic diagram showing the configurations of the main circuit conductor and the insulation barrier, and (b) is (a). It is a figure which shows the electric potential distribution in the structure of (). この発明の実施の形態６によるスイッチギヤの主要部を構成する主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。FIG. 7 shows the configuration of main circuit conductors and the like constituting the main part of a switchgear according to Embodiment 6 of the present invention, wherein (a) is a schematic diagram showing the configurations of the main circuit conductor and the insulation barrier, and (b) is (a). It is a figure which shows the electric potential distribution in the structure of (). 実施の形態７における電位分布を示す図である。FIG. 20 shows a potential distribution in the seventh embodiment. 実施の形態８における主回路導体等の構成を示す概略図である。FIG. 20 is a schematic diagram showing a configuration of a main circuit conductor and the like in the eighth embodiment. 実施の形態９における主回路導体等の構成を示す概略図である。FIG. 20 is a schematic diagram illustrating a configuration of a main circuit conductor and the like in the ninth embodiment. 従来のスイッチギヤにおける主回路導体等の構成を示す概略図である。It is the schematic which shows the structure of the main circuit conductor etc. in the conventional switchgear.

実施の形態１．
以下、この発明の実施の形態１を図にもとづいて説明する。図１は、実施の形態１によるスイッチギヤの主要部を構成する主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。 Embodiment 1 FIG.
Embodiment 1 of the present invention will be described below with reference to the drawings. 1A and 1B show the configuration of main circuit conductors and the like constituting the main part of the switchgear according to the first embodiment. FIG. 1A is a schematic diagram showing the configuration of a main circuit conductor and an insulation barrier, and FIG. It is a figure which shows the electric potential distribution in the structure of a).

図１（ａ）において、主回路導体１はスイッチギヤを構成する遮断器、断路器、接地開閉器あるいは断路器に接地開閉機能を付加した３位置断路器などの主回路を構成する導体で、スイッチギヤの箱体を構成する接地金属容器１０内に封入されたSF6ガス、乾燥空気、窒素、二酸化炭素などの絶縁性ガス雰囲気中に配設されている。   In FIG. 1A, a main circuit conductor 1 is a conductor constituting a main circuit such as a circuit breaker, a disconnecting switch, a grounding switch, or a three-position disconnecting switch having a grounding switching function added to the disconnecting switch. It is disposed in an insulating gas atmosphere such as SF6 gas, dry air, nitrogen, carbon dioxide, etc. enclosed in a grounded metal container 10 constituting the box of the switchgear.

主回路導体１の、同相の対向電極あるいは他相の電極や接地金属容器と対向する先端部には曲面１ａが形成されると共に、この曲面１ａに沿って曲面全体を覆う絶縁バリヤ２が曲面１ａと僅かの間隔を介して設けられている。また、絶縁バリヤ２の端部には、絶縁バリヤの厚みｔの１／２以下の曲率を有する曲面２ａが形成されている。   A curved surface 1a is formed at the tip of the main circuit conductor 1 facing the counter electrode of the same phase, the electrode of the other phase, or the ground metal container, and an insulating barrier 2 covering the entire curved surface along the curved surface 1a. And a slight gap. A curved surface 2 a having a curvature equal to or less than ½ of the thickness t of the insulating barrier is formed at the end of the insulating barrier 2.

このような構成とすることにより、絶縁バリヤの端部の曲面２ａにおける電位分布が図１（ｂ）に示すように、粗になっており、この部分における電界が低くなっていることが認識できる。   By adopting such a configuration, it can be recognized that the potential distribution on the curved surface 2a at the end of the insulating barrier is rough as shown in FIG. 1B, and the electric field in this portion is low. .

実施の形態２．
次に、この発明の実施の形態２を図にもとづいて説明する。図２は、実施の形態２における主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。 Embodiment 2. FIG.
Next, a second embodiment of the present invention will be described with reference to the drawings. 2A and 2B show the configuration of the main circuit conductor and the like in the second embodiment. FIG. 2A is a schematic diagram showing the configuration of the main circuit conductor and the insulation barrier, and FIG. 2B shows the potential distribution in the configuration of FIG. FIG.

これらの図において、図１と同一または相当部分には同一符号を付して説明を省略する。図１と異なる点は、図２（ａ）に示すように、絶縁バリヤ２の端部に、主回路導体１側に突出する突出部２ｂを形成し、この突出部２ｂを含む絶縁バリヤの端部に、絶縁バリヤの厚みｔの１／２以上の曲率を有する曲面２ｃを形成した点である。   In these drawings, the same or corresponding parts as those in FIG. The difference from FIG. 1 is that, as shown in FIG. 2 (a), a protruding portion 2b protruding toward the main circuit conductor 1 is formed at the end of the insulating barrier 2, and the end of the insulating barrier including the protruding portion 2b is formed. This is the point that a curved surface 2c having a curvature of 1/2 or more of the thickness t of the insulating barrier is formed in the part.

このような構成とすることにより、絶縁バリヤの端部の曲面２ｃにおける電位分布が図２（ｂ）に示すように、図１（ｂ）より更に粗になっており、この部分における電界が一層低くなっていることが認識できる。   By adopting such a configuration, the potential distribution on the curved surface 2c at the end of the insulating barrier is further coarser than that in FIG. 1B as shown in FIG. 2B, and the electric field in this portion is further increased. You can see that it is lower.

実施の形態３．
次に、この発明の実施の形態３を図にもとづいて説明する。図３は、実施の形態３における主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。 Embodiment 3 FIG.
Next, a third embodiment of the present invention will be described with reference to the drawings. 3A and 3B show the configuration of the main circuit conductor and the like in the third embodiment. FIG. 3A is a schematic diagram showing the configuration of the main circuit conductor and the insulation barrier, and FIG. 3B shows the potential distribution in the configuration of FIG. FIG.

これらの図において、図１と同一または相当部分には同一符号を付して説明を省略する。図１と異なる点は、図３（ａ）に示すように、絶縁バリヤ２の端部に、主回路導体と対向する側の反対側に突出する突出部２ｄを形成し、この突出部２ｄを含む絶縁バリヤの端部に、絶縁バリヤの厚みｔの１／２以上の曲率を有する曲面２ｅを形成した点である。   In these drawings, the same or corresponding parts as those in FIG. The difference from FIG. 1 is that, as shown in FIG. 3 (a), a protruding portion 2d protruding on the opposite side of the side facing the main circuit conductor is formed at the end of the insulating barrier 2, and this protruding portion 2d is This is that a curved surface 2e having a curvature of 1/2 or more of the thickness t of the insulating barrier is formed at the end of the insulating barrier.

このような構成とすることにより、絶縁バリヤの端部の曲面２ｅにおける電位分布が図３（ｂ）に示すように、図１（ｂ）より更に粗になっており、この部分における電界が一層低くなっていることが認識できる。   By adopting such a configuration, the potential distribution on the curved surface 2e at the end of the insulating barrier is further coarser than that in FIG. 1B as shown in FIG. 3B, and the electric field in this portion is further increased. You can see that it is lower.

実施の形態４．
次に、この発明の実施の形態４を図にもとづいて説明する。図４は、実施の形態４における主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。 Embodiment 4 FIG.
Next, a fourth embodiment of the present invention will be described with reference to the drawings. 4A and 4B show the configuration of the main circuit conductor and the like in the fourth embodiment. FIG. 4A is a schematic diagram showing the configuration of the main circuit conductor and the insulation barrier, and FIG. 4B shows the potential distribution in the configuration of FIG. FIG.

これらの図において、図１と同一または相当部分には同一符号を付して説明を省略する。これらの図に示すように、絶縁バリヤ２の構成は図１（ａ）と同じであるが、主回路導体１の絶縁バリヤ２に覆われていない部位の導体１ｂの外径が絶縁バリヤ２に覆われた部位の導体１ｃの外径より小さくされている点が図１（ａ）とは異なる。   In these drawings, the same or corresponding parts as those in FIG. As shown in these drawings, the configuration of the insulation barrier 2 is the same as that of FIG. 1A, but the outer diameter of the conductor 1b in the portion of the main circuit conductor 1 not covered by the insulation barrier 2 is the insulation barrier 2. The point which is made smaller than the outer diameter of the covered conductor 1c is different from FIG.

このような構成とすることにより、絶縁バリヤの端部の曲面２ａにおける電位分布が図４（ｂ）に示すように、図１（ｂ）より更に粗になっており、この部分における電界が一層低くなっていることが認識できる。   By adopting such a configuration, the potential distribution on the curved surface 2a at the end of the insulating barrier is further coarser than that in FIG. 1B as shown in FIG. 4B, and the electric field in this portion is further increased. You can see that it is lower.

実施の形態５．
次に、この発明の実施の形態５を図にもとづいて説明する。図５は、実施の形態５における主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。 Embodiment 5 FIG.
Next, a fifth embodiment of the present invention will be described with reference to the drawings. 5A and 5B show the configuration of the main circuit conductor and the like in the fifth embodiment. FIG. 5A is a schematic diagram showing the configuration of the main circuit conductor and the insulation barrier, and FIG. 5B shows the potential distribution in the configuration of FIG. FIG.

これらの図において、図４と同一または相当部分には同一符号を付して説明を省略する。図４と異なる点は、絶縁バリヤ２の内側面を、主回路導体１の直径方向に延びる第１の内側平面２ｆと、主回路導体１の延長方向に延びる第２の内側平面２ｇとから構成し、第１の内側平面２ｆと第２の内側平面２ｇとを主回路導体１の先端部の曲面１ａの曲率より小さな曲率の曲面２ｈで結合するようにした点である。   In these drawings, the same or corresponding parts as in FIG. The difference from FIG. 4 is that the inner side surface of the insulation barrier 2 is composed of a first inner plane 2 f extending in the diameter direction of the main circuit conductor 1 and a second inner plane 2 g extending in the extending direction of the main circuit conductor 1. The first inner plane 2f and the second inner plane 2g are connected by a curved surface 2h having a curvature smaller than the curvature of the curved surface 1a at the tip of the main circuit conductor 1.

このような構成とすることにより、絶縁バリヤの端部の曲面２ａにおける電位分布が図５（ｂ）に示すように、図１（ｂ）より更に粗になっているのに加え、絶縁バリヤ２から接地金属容器１０までの電位差が小さく（等電位線の本数が少なく）なり、絶縁バリヤ２の表面における電界が図１（ｂ）に比して低くなっていることが認識できる。   By adopting such a configuration, the potential distribution on the curved surface 2a at the end of the insulation barrier is further coarser than that shown in FIG. 1B as shown in FIG. It can be recognized that the potential difference from the ground metal container 10 is small (the number of equipotential lines is small), and the electric field on the surface of the insulating barrier 2 is lower than that in FIG.

実施の形態６．
次に、この発明の実施の形態６を図にもとづいて説明する。図６は、実施の形態６における主回路導体等の構成を示すもので、（ａ）は主回路導体及び絶縁バリヤの構成を示す概略図、（ｂ）は（ａ）の構成における電位分布を示す図である。 Embodiment 6 FIG.
Next, a sixth embodiment of the present invention will be described with reference to the drawings. 6A and 6B show the configuration of the main circuit conductor and the like in the sixth embodiment. FIG. 6A is a schematic diagram showing the configuration of the main circuit conductor and the insulation barrier, and FIG. 6B shows the potential distribution in the configuration of FIG. FIG.

これらの図において、図４と同一または相当部分には同一符号を付して説明を省略する。図４と異なる点は、絶縁バリヤ２の外側面を、主回路導体１の直径方向に延びる第１の外側平面２ｊと、主回路導体１の延長方向に延びる第２の外側平面２ｋとから構成し、第１の外側平面２ｊと第２の外側平面２ｋとを主回路導体１の先端部の曲面１ａの曲率より小さな曲率の曲面２ｌで結合するようにした点である。   In these drawings, the same or corresponding parts as in FIG. The difference from FIG. 4 is that the outer surface of the insulating barrier 2 is composed of a first outer plane 2j extending in the diameter direction of the main circuit conductor 1 and a second outer plane 2k extending in the extending direction of the main circuit conductor 1. The first outer plane 2j and the second outer plane 2k are connected by a curved surface 2l having a curvature smaller than the curvature of the curved surface 1a at the tip of the main circuit conductor 1.

このような構成とすることにより、絶縁バリヤの端部の曲面２ａにおける電位分布が図６（ｂ）に示すように、図１（ｂ）より更に粗になっているのに加え、絶縁バリヤ２の厚さをこのように変化させると、絶縁物表面上の最大電界発生部から絶縁バリヤ端部までの絶縁物表面上の電位において、極値（極小値または極大値であるが印加電圧の極性によって変わるのでここでは極値とする）が発生する。   By adopting such a configuration, the potential distribution on the curved surface 2a at the end of the insulation barrier is further coarser than that shown in FIG. 1B as shown in FIG. When the thickness of the electrode is changed in this way, the potential on the surface of the insulator from the maximum electric field generating portion on the surface of the insulator to the end of the insulating barrier is the extreme value (the minimum value or the maximum value, but the polarity of the applied voltage). Here, it is an extreme value).

そして絶縁物表面上の最大電界発生部から絶縁バリヤ端部の間では全路破壊に先立って、絶縁バリヤ表面の最大電界発生部から絶縁バリヤの端部に向かってストリーマと呼ばれる先行放電が発生する場合がある。   A leading discharge called streamer is generated between the maximum electric field generating portion on the insulating surface and the end of the insulating barrier, before the entire path breakage, from the maximum electric field generating portion on the insulating barrier surface to the end of the insulating barrier. There is a case.

ストリーマの先端は正または負の極性を持っており、高電圧を印加した主回路導体の極性が正の場合には先端が負極性のストリーマが、また、主回路導体の極性が負の場合には先端が正極性のストリーマが現れる。   The streamer tip has a positive or negative polarity.When the polarity of the main circuit conductor to which high voltage is applied is positive, the tip of the streamer has a negative polarity, and when the polarity of the main circuit conductor is negative. Shows a streamer with positive polarity at the tip.

正ストリーマは電位の高い部位から低い部位へ、負ストリーマは電位の低い部位から高い部位へ進展しやすい性質がある。逆に、正ストリーマは電位の低い部位から高い部位へ、負ストリーマは電位の高い部位から低い部位へは進展しにくい性質がある。   Positive streamers tend to progress from high potential sites to low sites, and negative streamers tend to progress from low potential sites to high sites. On the contrary, the positive streamer has a property that it is difficult to progress from a site having a low potential to a high site, and the negative streamer is difficult to progress from a site having a high potential to a low site.

従って、絶縁物表面の電位変化に上述の極値が発生すると、最大電界発生部から極値を持つ部位に達するまでの区間では、正負どちらの場合でもストリーマが進展しにくくなる電位の変化が現れる。その結果、この区間ではストリーマの進展が遅れ、その分だけ絶縁破壊電圧が上昇することになる。   Therefore, when the above-mentioned extreme value is generated in the potential change of the insulator surface, a change in potential that makes it difficult for the streamer to progress in either case of positive or negative appears in the interval from the maximum electric field generating portion to the portion having the extreme value. . As a result, the progress of the streamer is delayed in this section, and the dielectric breakdown voltage increases accordingly.

実施の形態７．
次に、この発明の実施の形態７について説明する。この実施の形態では、上述した各実施の形態において、絶縁バリヤ２をテフロン（登録商標）（比誘電率：2.1）、ポリカーボネイト（比誘電率：2.9）などの比誘電率が３以下の絶縁材料で構成するものである。 Embodiment 7 FIG.
Next, a seventh embodiment of the present invention will be described. In this embodiment, in each of the embodiments described above, the insulating barrier 2 is made of an insulating material having a relative dielectric constant of 3 or less, such as Teflon (registered trademark) (relative dielectric constant: 2.1), polycarbonate (relative dielectric constant: 2.9), or the like. It consists of.

絶縁バリヤ２をこの種の絶縁材料で構成すると、絶縁バリヤ２の端部の曲面２ａにおける電位分布が図７に示すように、図１（ｂ）に比して更に粗となり、この部分における電界が一層低くなることが認識できる。   When the insulating barrier 2 is made of this kind of insulating material, the potential distribution on the curved surface 2a at the end of the insulating barrier 2 becomes further coarser than that in FIG. 1B as shown in FIG. Can be recognized to be even lower.

実施の形態８．
次に、この発明の実施の形態８を図にもとづいて説明する。図８は、実施の形態８における主回路導体等の構成を示す概略図である。この図において、図１（ａ）と同一または相当部分には同一符号を付して説明を省略する。 Embodiment 8 FIG.
Next, an eighth embodiment of the present invention will be described with reference to the drawings. FIG. 8 is a schematic diagram showing the configuration of the main circuit conductor and the like in the eighth embodiment. In this figure, the same or corresponding parts as in FIG.

図１（ａ）と異なる点は、主回路導体１の先端部中央に第１の凹所１ｄを形成してその周面と曲面１ａとを連結し、第１の凹所１ｄの底面部に第１の凹所より小径の第２の凹所１ｆを形成し、この第２の凹所１ｆの周面に雌ねじを形成して結合部を構成すると共に、絶縁バリヤ２の内面中央部に雄ねじ２ｍを形成し、第２の凹所１ｆの雌ねじにねじ込む形で主回路導体１と絶縁バリヤ２とを結合するようにした点である。   1A differs from FIG. 1A in that a first recess 1d is formed at the center of the front end of the main circuit conductor 1 and its peripheral surface and the curved surface 1a are connected to each other at the bottom of the first recess 1d. A second recess 1f having a diameter smaller than that of the first recess is formed, a female screw is formed on the peripheral surface of the second recess 1f to form a coupling portion, and a male screw is formed at the center of the inner surface of the insulating barrier 2 2m is formed, and the main circuit conductor 1 and the insulation barrier 2 are coupled to each other by screwing into the female screw of the second recess 1f.

このような構成とすることにより、絶縁バリヤ２を主回路導体１に強固に固定すると共に、絶縁バリヤ２の端部の曲面２ａにおける電界を上述した各実施の形態と同様に緩和することができる。   With such a configuration, the insulating barrier 2 can be firmly fixed to the main circuit conductor 1, and the electric field on the curved surface 2a at the end of the insulating barrier 2 can be relaxed in the same manner as in the above-described embodiments. .

実施の形態９．
次に、この発明の実施の形態９を図にもとづいて説明する。図９は、実施の形態９における主回路導体等の構成を示す概略図である。この図において、図８と同一または相当部分には同一符号を付して説明を省略する。 Embodiment 9 FIG.
Next, a ninth embodiment of the present invention will be described with reference to the drawings. FIG. 9 is a schematic diagram showing the configuration of the main circuit conductor and the like in the ninth embodiment. In this figure, the same or corresponding parts as in FIG.

図８と異なる点は、第２の凹所１ｆの底面部に第２の凹所１ｆより小径の孔１ｇを形成すると共に、絶縁バリヤ２の中央部に絶縁バリヤの内面側に突出する雄ねじ２ｎを設け、更に、雄ねじ２ｎの中央部に孔１ｇより大径の孔２ｐを形成して、この孔２ｐと絶縁バリヤ２の外面との間に曲面２ｑを形成した点である。   8 differs from FIG. 8 in that a hole 1g having a diameter smaller than that of the second recess 1f is formed in the bottom surface of the second recess 1f, and a male screw 2n that protrudes toward the inner surface of the insulation barrier 2 at the center of the insulation barrier 2. Further, a hole 2p having a diameter larger than that of the hole 1g is formed in the central portion of the male screw 2n, and a curved surface 2q is formed between the hole 2p and the outer surface of the insulating barrier 2.

このような構成とすることにより、絶縁バリヤ２を主回路導体１に強固に固定すると共に、ねじ固定部における高電界の発生を抑制し、耐電圧性能を向上することができる。   With such a configuration, it is possible to firmly fix the insulating barrier 2 to the main circuit conductor 1, suppress the generation of a high electric field in the screw fixing portion, and improve the withstand voltage performance.

１ 主回路導体、 １ａ 曲面、 １ｄ 第１の凹所、 １ｆ 第２の凹所、
１ｇ 孔、 ２ 絶縁バリヤ、 ２ａ、２ｃ、２ｅ 曲面、
２ｂ、２ｄ 突出部、 ２ｆ 第１の内側平面、 ２ｇ 第２の内側平面、
２ｈ、２ｌ 曲面、 ２ｊ 第１の外側平面、 ２ｋ 第２の外側平面、
２ｍ、２ｎ 雄ねじ、 ２ｐ 孔、 ２ｑ 曲面、 １０ 接地金属容器。 1 main circuit conductor, 1a curved surface, 1d first recess, 1f second recess,
1g hole, 2 insulation barrier, 2a, 2c, 2e curved surface,
2b, 2d protrusion, 2f first inner plane, 2g second inner plane,
2h, 2l curved surface, 2j first outer plane, 2k second outer plane,
2m, 2n male thread, 2p hole, 2q curved surface, 10 ground metal container.

Claims (8)

接地金属容器内に封入された絶縁性ガス中に配設され、先端部に曲面が形成された主回路導体と、この主回路導体との間に空隙を形成して上記曲面全体を覆う絶縁バリヤとを備え、上記絶縁バリヤの端部に絶縁バリヤの厚みの１／２以下の曲率を有する曲面を形成したことを特徴とするスイッチギヤ。   A main circuit conductor that is disposed in an insulating gas sealed in a grounded metal container and has a curved surface at the tip, and an insulating barrier that covers the entire curved surface by forming a gap between the main circuit conductor And a curved surface having a curvature of 1/2 or less of the thickness of the insulating barrier is formed at the end of the insulating barrier. 上記主回路導体は、上記絶縁バリヤに覆われていない部位の導体の外径を、上記絶縁バリヤに覆われた部位の導体の外径より小さくしたことを特徴とする請求項１に記載のスイッチギヤ。   2. The switch according to claim 1, wherein the main circuit conductor has an outer diameter of a portion of the conductor not covered with the insulating barrier smaller than an outer diameter of the portion of the conductor covered with the insulating barrier. gear. 上記絶縁バリヤは、上記主回路導体の直径方向に延びる第１の内側平面と、上記主回路導体の延長方向に延びる第２の内側平面とを有し、上記絶縁バリヤの第１の内側平面と第２の内側平面とを上記主回路導体の曲面の曲率より小さな曲率の曲面で結合するようにしたことを特徴とする請求項１または２に記載のスイッチギヤ。   The insulation barrier has a first inner plane extending in the diameter direction of the main circuit conductor and a second inner plane extending in the extension direction of the main circuit conductor, and the first inner plane of the insulation barrier; The switchgear according to claim 1 or 2, wherein the second inner plane is coupled to a curved surface having a smaller curvature than the curved surface of the main circuit conductor. 上記絶縁バリヤは、上記主回路導体の直径方向に延びる第１の外側平面と、上記主回路導体の延長方向に延びる第２の外側平面とを有し、上記絶縁バリヤの第１の外側平面と第２の外側平面とを上記主回路導体の曲面の曲率より小さな曲率の曲面で結合するようにしたことを特徴とする請求項１または２に記載のスイッチギヤ。   The insulation barrier has a first outer plane extending in a diameter direction of the main circuit conductor and a second outer plane extending in an extension direction of the main circuit conductor, and the first outer plane of the insulation barrier; The switchgear according to claim 1 or 2, wherein the second outer plane is coupled to a curved surface having a smaller curvature than the curved surface of the main circuit conductor. 上記絶縁バリヤは、比誘電率が３以下の絶縁材料で構成されたことを特徴とする請求項１〜４のいずれか一項に記載のスイッチギヤ。   The switchgear according to any one of claims 1 to 4, wherein the insulating barrier is made of an insulating material having a relative dielectric constant of 3 or less. 比誘電率が３以下の絶縁材料は、テフロン（登録商標）あるいはポリカーボネイトであることを特徴とする請求項５に記載のスイッチギヤ。   6. The switchgear according to claim 5, wherein the insulating material having a relative dielectric constant of 3 or less is Teflon (registered trademark) or polycarbonate. 上記主回路導体は、先端部の中心部に結合部を設け、上記結合部に連なる外面を曲面にすると共に、上記絶縁バリヤを上記結合部に結合して上記主回路導体に固定したことを特徴とする請求項１〜６のいずれか一項に記載のスイッチギヤ。   The main circuit conductor is provided with a coupling portion at the center of the tip portion, the outer surface connected to the coupling portion is curved, and the insulating barrier is coupled to the coupling portion and fixed to the main circuit conductor. The switchgear according to any one of claims 1 to 6. 上記主回路導体の先端部には、上記曲面に連なる第１の凹所と、上記第１の凹所の底面部に形成され、上記第１の凹所より小さな径を有し内周面に雌ねじが形成された第２の凹所と、上記第２の凹所の底面部に形成され、上記第２の凹所より小さな径で上記主回路導体の延長方向に形成された孔部とを設け、上記絶縁バリヤには上記第２の凹所の内周面の雌ねじと螺合する雄ねじを設け、この雄ねじを上記雌ねじと螺合させて上記主回路導体と絶縁バリヤとを結合するようにしたことを特徴とする請求項１〜６のいずれか一項に記載のスイッチギヤ。   At the tip of the main circuit conductor, a first recess connected to the curved surface and a bottom surface of the first recess are formed, and have a smaller diameter than the first recess on the inner peripheral surface. A second recess formed with an internal thread, and a hole formed in the bottom surface of the second recess and having a smaller diameter than the second recess in the extending direction of the main circuit conductor. The insulating barrier is provided with a male screw that is screwed with a female screw on the inner peripheral surface of the second recess, and the male circuit screw is screwed with the female screw so as to couple the main circuit conductor and the insulating barrier. The switchgear according to any one of claims 1 to 6, wherein
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