JP5027192B2 - 放射源および極端紫外線放射を発生させる方法 - Google Patents
放射源および極端紫外線放射を発生させる方法 Download PDFInfo
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- JP5027192B2 JP5027192B2 JP2009189611A JP2009189611A JP5027192B2 JP 5027192 B2 JP5027192 B2 JP 5027192B2 JP 2009189611 A JP2009189611 A JP 2009189611A JP 2009189611 A JP2009189611 A JP 2009189611A JP 5027192 B2 JP5027192 B2 JP 5027192B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (14)
- 極端紫外線放射を発生させる放射源であって、
燃料小滴を発生させる小滴ジェネレータと、
前記小滴ジェネレータによる前記燃料小滴の発生に続いて前記燃料小滴を加熱することで、前記燃料小滴中にある燃料の質量を低減するおよび/または前記燃料小滴の密度を低減するヒータと、
前記小滴が前記ヒータにより加熱される際に発生される燃料蒸気を軽減する軽減システムと、
前記ヒータによって加熱された前記燃料小滴上に放射を誘導することで、前記極端紫外線放射を発生させる放射エミッタと、
を含む放射源。 - 極端紫外線放射を発生させる放射源であって、
燃料小滴を発生させる小滴ジェネレータと、
前記小滴ジェネレータによる前記燃料小滴の発生に続いて前記燃料小滴を加熱することで、前記燃料小滴中にある燃料の質量を低減するおよび/または前記燃料小滴の密度を低減するヒータと、
前記ヒータによって加熱された前記燃料小滴上に放射を誘導することで、前記極端紫外線放射を発生させる放射エミッタと、
を含み、
前記ヒータは、10%よりも大きく前記燃料小滴中にある燃料量を低減する、
放射源。 - 前記ヒータは、前記燃料小滴を熱的に加熱するサーマルヒータである、請求項1又は2に記載の放射源。
- 前記サーマルヒータは、前記小滴上に熱を当てる1つ以上のヒータ素子を含む、請求項3に記載の放射源。
- 前記ヒータは、前記燃料小滴上に電磁放射を誘導する電磁放射源である、請求項1又は2に記載の放射源。
- 前記電磁放射源は、前記燃料小滴の進行方向に対して鋭角をなす電磁放射ビームを発生させる、請求項5に記載の放射源。
- 前記ヒータは、電子銃である、請求項1又は2に記載の放射源。
- 前記ヒータは、前記燃料小滴に誘導される無線周波数またはマイクロ波周波数を発生させる、請求項1又は2に記載の放射源。
- 前記小滴が前記ヒータにより加熱される際に発生される燃料蒸気を軽減する軽減システムを更に含む、請求項2に記載の放射源。
- 前記軽減システムは、前記小滴を実質的に囲む円筒を含み、また前記軽減システムは、ペクレ効果を利用して前記蒸気を軽減する、請求項1又は9に記載の放射源。
- 前記ヒータは、40%よりも大きく前記燃料小滴中にある燃料量を低減する、請求項1又は2に記載の放射源。
- 請求項1乃至11のいずれか一項に記載される放射源を含み、且つ、極端紫外線放射を含む放射ビームにパターンを付けるパターニングデバイスを支持するサポートと、前記パターン付き放射を基板上に投影する投影システムとを更に含む、リソグラフィ装置。
- 極端紫外線放射を発生させる方法であって、
燃料小滴を発生させることと、
前記燃料小滴を加熱することで、前記燃料小滴中にある燃料の質量を10%よりも大きく低減することと、
続いて、極端紫外線放射が発生されるように前記燃料小滴上に放射を誘導することと、
を含む方法。 - 前記燃料小滴中にある燃料量は、40%よりも大きく低減される、請求項13に記載の方法。
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US13630508P | 2008-08-26 | 2008-08-26 | |
US61/136,305 | 2008-08-26 | ||
US19320108P | 2008-11-05 | 2008-11-05 | |
US61/193,201 | 2008-11-05 |
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JP2010056551A JP2010056551A (ja) | 2010-03-11 |
JP5027192B2 true JP5027192B2 (ja) | 2012-09-19 |
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EP (1) | EP2159638B1 (ja) |
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US9632419B2 (en) | 2011-09-22 | 2017-04-25 | Asml Netherlands B.V. | Radiation source |
JP6174605B2 (ja) * | 2012-02-22 | 2017-08-02 | エーエスエムエル ネザーランズ ビー.ブイ. | 燃料流生成器、ソースコレクタ装置、及び、リソグラフィ装置 |
KR20140036538A (ko) * | 2012-09-17 | 2014-03-26 | 삼성전자주식회사 | 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스 |
WO2014090480A1 (en) * | 2012-12-12 | 2014-06-19 | Asml Netherlands B.V. | Power source for a lithographic apparatus, and lithographic apparatus comprising such a power source |
KR102115543B1 (ko) * | 2013-04-26 | 2020-05-26 | 삼성전자주식회사 | 극자외선 광원 장치 |
US10237960B2 (en) | 2013-12-02 | 2019-03-19 | Asml Netherlands B.V. | Apparatus for and method of source material delivery in a laser produced plasma EUV light source |
US9301382B2 (en) * | 2013-12-02 | 2016-03-29 | Asml Netherlands B.V. | Apparatus for and method of source material delivery in a laser produced plasma EUV light source |
US9301381B1 (en) | 2014-09-12 | 2016-03-29 | International Business Machines Corporation | Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas |
US9451683B1 (en) * | 2015-07-14 | 2016-09-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Solution for EUV power increment at wafer level |
JP6616427B2 (ja) | 2015-12-15 | 2019-12-04 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US11013097B2 (en) * | 2017-11-15 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for generating extreme ultraviolet radiation |
US10631392B2 (en) * | 2018-04-30 | 2020-04-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV collector contamination prevention |
CN117999857A (zh) * | 2021-09-15 | 2024-05-07 | Asml荷兰有限公司 | 用于主动加热euv光源中的基板的装置和方法 |
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FR2799667B1 (fr) * | 1999-10-18 | 2002-03-08 | Commissariat Energie Atomique | Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
US6493423B1 (en) * | 1999-12-24 | 2002-12-10 | Koninklijke Philips Electronics N.V. | Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit |
US7476886B2 (en) * | 2006-08-25 | 2009-01-13 | Cymer, Inc. | Source material collection unit for a laser produced plasma EUV light source |
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US7465946B2 (en) * | 2004-03-10 | 2008-12-16 | Cymer, Inc. | Alternative fuels for EUV light source |
US6738452B2 (en) * | 2002-05-28 | 2004-05-18 | Northrop Grumman Corporation | Gasdynamically-controlled droplets as the target in a laser-plasma extreme ultraviolet light source |
JP4264505B2 (ja) * | 2003-03-24 | 2009-05-20 | 独立行政法人産業技術総合研究所 | レーザープラズマ発生方法及び装置 |
JP4517147B2 (ja) | 2004-11-26 | 2010-08-04 | 国立大学法人 宮崎大学 | 極端紫外光源装置 |
US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7193229B2 (en) * | 2004-12-28 | 2007-03-20 | Asml Netherlands B.V. | Lithographic apparatus, illumination system and method for mitigating debris particles |
JP2006210157A (ja) | 2005-01-28 | 2006-08-10 | Ushio Inc | レーザ生成プラズマ方式極端紫外光光源 |
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JP5335298B2 (ja) * | 2008-06-20 | 2013-11-06 | ギガフォトン株式会社 | 極端紫外光源装置及び極端紫外光の生成方法 |
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US20100053581A1 (en) | 2010-03-04 |
JP2010056551A (ja) | 2010-03-11 |
EP2159638A1 (en) | 2010-03-03 |
EP2159638B1 (en) | 2015-06-17 |
US8507882B2 (en) | 2013-08-13 |
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