JP5025188B2 - Wafer grinding method - Google Patents

Wafer grinding method Download PDF

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JP5025188B2
JP5025188B2 JP2006226876A JP2006226876A JP5025188B2 JP 5025188 B2 JP5025188 B2 JP 5025188B2 JP 2006226876 A JP2006226876 A JP 2006226876A JP 2006226876 A JP2006226876 A JP 2006226876A JP 5025188 B2 JP5025188 B2 JP 5025188B2
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grinding
wafer
grinding wheel
wheel
water
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JP2008053369A (en
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臣之典 関家
節男 山本
暁治 台井
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Disco Corp
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Description

本発明は、ウエーハ研削方法に関するものである。 The present invention relates to c Eha grinding method.

ＩＣ，ＬＳＩ等のデバイスが表面に複数形成されたウエーハは、裏面が研削されて所定の厚さに形成され、その後、ダイシング装置等の分割装置によって個々のデバイスに分割されて携帯電話、パソコン等の電子機器に利用される。   A wafer in which a plurality of devices such as IC and LSI are formed on the front surface is ground to have a predetermined thickness by grinding the back surface, and then divided into individual devices by a dividing device such as a dicing device. Used in electronic equipment.

ここで、ウエーハの裏面を研削する研削装置は、ウエーハを保持するチャックテーブルと、このチャックテーブルに保持されたウエーハを研削する研削ホイールが装着された研削手段と、チャックテーブルに保持されたウエーハと研削ホイールに研削水を供給する研削水供給手段と、から概ね構成され、ウエーハを所望の厚さに研削することができる。   Here, the grinding apparatus for grinding the back surface of the wafer includes a chuck table for holding the wafer, a grinding means on which a grinding wheel for grinding the wafer held on the chuck table is mounted, and a wafer held on the chuck table. Grinding water supply means for supplying the grinding water to the grinding wheel, and the wafer can be ground to a desired thickness.

特開２００４−１１１４３４号公報JP 2004-111434 A

しかしながら、ウエーハが所望の厚さに形成された後、ウエーハの研削面を観察すると、研削ホイールによるソーマークとは明らかに異なる比較的大きな引っ掻き傷が形成される場合があり、この引っ掻き傷がデバイスの抗折強度を低下させるという問題がある。   However, after the wafer is formed to the desired thickness, when the grinding surface of the wafer is observed, a relatively large scratch may be formed that is clearly different from the saw mark by the grinding wheel. There is a problem of reducing the bending strength.

本発明は、上記に鑑みてなされたものであって、ウエーハを研削ホイールで研削する際に、ウエーハの研削面の引っ掻き傷の発生を抑制することができるウエーハ研削方法を提供することを目的とする。 The present invention was made in view of the above, when grinding the wafer in the grinding wheel, that it provides can be roux Eha grinding method to suppress the occurrence of scratches of the grinding surface of the wafer Objective.

上述した課題を解決し、目的を達成するために、本発明に係るウエーハ研削方法は、チャックテーブルに保持されたウエーハを研削ホイールで研削するウエーハ研削方法であって、ウエーハを研削する際、ウエーハと前記研削ホイールに電解還元水を供給する初期研削工程と、該初期研削工程の後、電解還元水の供給を停止してウエーハと前記研削ホイールに純水を供給しながら前記研削ホイールでウエーハを研削するウエーハ研削工程と、を備えることを特徴とする。 In order to solve the above-described problems and achieve the object, a wafer grinding method according to the present invention is a wafer grinding method for grinding a wafer held on a chuck table with a grinding wheel, and the wafer is ground when grinding the wafer. And an initial grinding step for supplying electrolytic reduced water to the grinding wheel, and after the initial grinding step, the electrolytic reduced water supply is stopped and pure water is supplied to the wafer and the grinding wheel while the wafer is And a wafer grinding step for grinding.

本発明に係るウエーハ研削方法によれば、水の電気分解によって生成される電解還元水を研削水として使用し、研削ホイールの研削面に電解還元水を供給するようにしたので、アルカリ水となって活性化された電解還元水が研削ホイールを構成する研削砥石の研削面に作用して砥粒の脱落を促し目詰まりが生じないように機能するため、ウエーハを研削ホイールで研削する際のウエーハの研削面の引っ掻き傷の発生を抑制することができるという効果を奏する。 According to engagement roux Eha grinding method in the present invention, the electrolytic reduced water produced by electrolysis of water is used as the grinding water, since then supplied electrolytic reduced water to the grinding surface of the grinding wheel, alkaline water When the wafer is ground with the grinding wheel, the activated electrolytically reduced water acts on the grinding surface of the grinding wheel that constitutes the grinding wheel to facilitate the removal of abrasive grains and prevent clogging. There is an effect that the generation of scratches on the ground surface of the wafer can be suppressed.

以下、本発明を実施するための最良の形態である研削装置およびウエーハ研削方法について図面を参照して説明する。   Hereinafter, a grinding apparatus and a wafer grinding method that are the best mode for carrying out the present invention will be described with reference to the drawings.

図１は、本実施の形態の研削装置を示す外観斜視図であり、図２は、仕上げ研削用の研削手段の研削ホイール付近の構成例を示す分解斜視図であり、図３は、仕上げ研削用の研削手段の研削ホイール付近の構成例を示す縦断側面図である。本実施の形態の研削装置１０は、ウエーハＷを吸引保持する３つのチャックテーブル１１と、これらのチャックテーブル１１をそれぞれ回転自在に支持して回転するターンテーブル１２と、ウエーハＷを収容するカセット１３ａ，１３ｂが載置されるカセット載置部１４ａ，１４ｂと、カセット載置部１４ａに載置されたカセット１３ａからウエーハＷを搬出するとともに研削後のウエーハＷをカセット載置部１４ｂに載置されたカセット１３ｂに収容する搬出入手段１５と、搬出入手段１５によって搬出されたウエーハＷの中心位置合わせを行う位置合わせ手段１６と、ウエーハＷを位置合わせ手段１６からチャックテーブル１１に搬送する搬送手段１７と、チャックテーブル１１に保持されたウエーハＷを研削する研削手段３０，４０と、チャックテーブル１１からウエーハＷを搬出する搬出手段５０と、研削後のチャックテーブル１１を洗浄する洗浄手段１８と、ウエーハＷを吸引保持して回転するスピンナーテーブル６１を備え研削後のウエーハＷの研削面を洗浄する洗浄手段６０と、仕上げ研削用の研削手段４０に対して付設された電解還元水供給手段７０とを備えている。ここで、ターンテーブル１２に配設された３個のチャックテーブル１１は、ターンテーブル１２が適宜回転することにより順次移動し、ウエーハ搬入・搬出領域Ｅ１、粗研削加工領域Ｅ２、および仕上げ研削加工領域Ｅ３に順次位置付けられる。   FIG. 1 is an external perspective view showing a grinding apparatus according to the present embodiment, FIG. 2 is an exploded perspective view showing a configuration example near a grinding wheel of a grinding means for finish grinding, and FIG. 3 is finish grinding. It is a vertical side view which shows the example of a structure of the grinding wheel vicinity of the grinding means for use. The grinding apparatus 10 according to the present embodiment includes three chuck tables 11 that suck and hold the wafer W, a turntable 12 that rotatably supports these chuck tables 11 and a cassette 13a that stores the wafer W. , 13b are placed on the cassette placing portions 14a, 14b, and the wafer W is unloaded from the cassette 13a placed on the cassette placing portion 14a, and the ground wafer W is placed on the cassette placing portion 14b. Loading / unloading means 15 accommodated in the cassette 13b, alignment means 16 for aligning the center of the wafer W carried by the loading / unloading means 15, and conveyance means for conveying the wafer W from the alignment means 16 to the chuck table 11. 17 and grinding means 30 and 40 for grinding the wafer W held on the chuck table 11; Grinding surface of wafer W after grinding comprising unloading means 50 for unloading wafer W from chuck table 11, cleaning means 18 for cleaning chuck table 11 after grinding, and spinner table 61 that rotates while sucking and holding wafer W. Cleaning means 60 for cleaning the surface and electrolytic reducing water supply means 70 attached to the grinding means 40 for finish grinding. Here, the three chuck tables 11 arranged on the turntable 12 are sequentially moved as the turntable 12 is appropriately rotated, and a wafer carry-in / out region E1, a rough grinding region E2, and a finish grinding region. Sequentially positioned at E3.

このような研削装置１０においては、カセット１３ａに収納されたウエーハＷが搬出入手段１５によって位置合わせ手段１６に搬送され、ここで中心位置合わせがされた後、搬送手段１７によってウエーハ搬入・搬出領域Ｅ１のチャックテーブル１１上に搬送され載置される。   In such a grinding apparatus 10, the wafer W accommodated in the cassette 13 a is conveyed to the alignment means 16 by the carry-in / out means 15, and after the center alignment is performed here, the wafer carry-in / out area by the conveyance means 17. It is transported and placed on the chuck table 11 of E1.

また、粗研削加工領域Ｅ２に位置付けられたチャックテーブル１１に保持されたウエーハＷに粗研削加工を施す粗研削用の研削手段３０は、壁部３１にＺ軸方向に配設された一対のガイドレール３２にガイドされてモータ３３の駆動に伴うボールねじ３３ａの回転により上下動する支持部３４に支持され、支持部３４の上下動に伴ってＺ軸方向に上下動するように構成されている。この研削手段３０は、回転可能に支持されたスピンドル３５ａを回転するモータ３５と、スピンドル３５ａの先端にホイールマウント３６を介して装着された研削ホイール３７とを備えている。研削ホイール３７は、下面に円環状に固着されてウエーハＷの裏面（上面）を粗研削する研削砥石３８を備えている。   The grinding means 30 for rough grinding that performs rough grinding on the wafer W held on the chuck table 11 positioned in the rough grinding region E2 includes a pair of guides disposed on the wall 31 in the Z-axis direction. It is supported by a support portion 34 that is guided by the rail 32 and moves up and down by rotation of a ball screw 33 a as the motor 33 is driven, and is configured to move up and down in the Z-axis direction as the support portion 34 moves up and down. . The grinding means 30 includes a motor 35 that rotates a spindle 35 a that is rotatably supported, and a grinding wheel 37 that is attached to the tip of the spindle 35 a via a wheel mount 36. The grinding wheel 37 includes a grinding wheel 38 that is fixed to the lower surface in an annular shape and coarsely grinds the back surface (upper surface) of the wafer W.

そこで、研削手段３０がモータ３５によるスピンドル３５ａの回転を伴ってＺ軸方向の下方に研削送りされて、回転する研削ホイール３７の研削砥石３８がウエーハＷの裏面に接触することにより、粗研削加工領域Ｅ２に位置付けられたチャックテーブル１７に保持されているウエーハＷの裏面が粗研削される。   Therefore, the grinding means 30 is ground and fed downward in the Z-axis direction with the rotation of the spindle 35a by the motor 35, and the grinding wheel 38 of the rotating grinding wheel 37 comes into contact with the back surface of the wafer W, so that rough grinding processing is performed. The back surface of the wafer W held on the chuck table 17 positioned in the region E2 is roughly ground.

また、仕上げ研削加工領域Ｅ３に位置付けられたチャックテーブル１１に保持されたウエーハＷに仕上げ研削加工を施す仕上げ研削用の研削手段４０は、壁部３１にＺ軸方向に配設された一対のガイドレール４１にガイドされてモータ４２の駆動伴うボールねじ４２ａの回転により上下動する支持部４３に支持され、支持部４３の上下動に伴ってＺ軸方向に上下動するように構成されている。この研削手段４０は、回転可能に支持されたスピンドル４４ａを回転するモータ４４と、スピンドル４４ａの先端にホイールマウント４５にボルト４６（図２参照）によって装着された研削ホイール４７とを備えている。研削ホイール４７は、図２に示すように、ホイール基台４８と、このホイール基台４８の下面（自由端部）に円環状に固着されてウエーハＷの裏面を仕上げ研削する研削砥石４９を備えている。４５ａは、ボルト貫通孔であり、４８ａは、ボルト孔である。また、研削砥石４９は、ダイヤモンド砥粒等の仕上げ研削用の微細な砥粒をビトリファイドボンド、レジンボンド、メタルボンド等のボンド剤で固定してなるものであり、全周に亘って等間隔で断続するドーナツリング状に形成されている。   The grinding means 40 for finish grinding that performs finish grinding on the wafer W held on the chuck table 11 positioned in the finish grinding region E3 includes a pair of guides disposed on the wall 31 in the Z-axis direction. It is supported by a support portion 43 that is guided by a rail 41 and moves up and down by rotation of a ball screw 42 a that is driven by a motor 42, and is configured to move up and down in the Z-axis direction as the support portion 43 moves up and down. The grinding means 40 includes a motor 44 that rotates a spindle 44a that is rotatably supported, and a grinding wheel 47 that is attached to a wheel mount 45 by bolts 46 (see FIG. 2) at the tip of the spindle 44a. As shown in FIG. 2, the grinding wheel 47 includes a wheel base 48 and a grinding wheel 49 that is fixed to the lower surface (free end) of the wheel base 48 in an annular shape and finish-grinds the back surface of the wafer W. ing. 45a is a bolt through hole, and 48a is a bolt hole. The grinding wheel 49 is formed by fixing fine abrasive grains for finishing grinding such as diamond abrasive grains with a bonding agent such as vitrified bond, resin bond, metal bond, etc., and at equal intervals over the entire circumference. It is formed in an intermittent donut ring shape.

そこで、研削手段４０がモータ４４によるスピンドル４４ａの回転を伴ってＺ軸方向の下方に研削送りされて、回転する研削ホイール４７中の研削砥石４９の研削面４９ａがウエーハＷの研削面である裏面に接触することにより、仕上げ研削加工領域Ｅ３に位置付けられたチャックテーブル１７に保持されているウエーハＷの裏面が仕上げ研削される。   Therefore, the grinding means 40 is ground and fed downward in the Z-axis direction with the rotation of the spindle 44a by the motor 44, and the grinding surface 49a of the grinding wheel 49 in the rotating grinding wheel 47 is the back surface where the grinding surface of the wafer W is the grinding surface. , The back surface of the wafer W held on the chuck table 17 positioned in the finish grinding region E3 is finish ground.

裏面（上面）が仕上げ研削されたウエーハＷを吸引保持しているチャックテーブル１７は、ウエーハ搬入・搬出領域Ｅ１に戻される。裏面が仕上げ研削されたウエーハＷは、この位置で、搬出手段５０によって吸引保持されてチャックテーブル１７から搬出されて洗浄手段６０のスピンナーテーブル６１上に搬送され、洗浄手段６０による洗浄により研削屑が除去された後に、搬出入手段１５によってカセット１４に収容される。また、洗浄手段１８は、ウエーハ搬入・搬出領域Ｅ１に戻されたチャックテーブル１１上の仕上げ研削済みのウエーハＷの裏面（上面）を洗浄するとともに、仕上げ研削されたウエーハＷが搬出手段５０によって取り上げられて空き状態となったウエーハ搬入・搬出領域Ｅ１のチャックテーブル１１の洗浄を行う。   The chuck table 17 that sucks and holds the wafer W whose back surface (upper surface) is finish-ground is returned to the wafer carry-in / out region E1. At this position, the wafer W whose back surface is finish-ground is sucked and held by the unloading means 50, unloaded from the chuck table 17, and conveyed onto the spinner table 61 of the cleaning means 60. After being removed, it is accommodated in the cassette 14 by the loading / unloading means 15. The cleaning means 18 cleans the back surface (upper surface) of the finish-ground wafer W on the chuck table 11 returned to the wafer carry-in / out area E1, and the finish-ground wafer W is taken up by the carry-out means 50. The chuck table 11 in the wafer carry-in / carry-out area E1 that has become empty is washed.

電解還元水供給手段７０は、仕上げ研削用の研削手段４０に装着された研削ホイール４７を構成する研削砥石４９の研削面４９ａに電解還元水を適宜タイミングで選択的に供給するためのものであって、本実施の形態では、研削用の純水を選択的に供給する機能並びに供給水切換え機能を併有させた構成とされている。このため、電解還元水供給手段７０は、純水を蓄えた純水供給源７１と、電解還元水を蓄えた電解還元水供給源７２と、純水供給源７１からの純水の供給と電解還元水供給源７２からの電解還元水の供給とを選択的に切換え制御する切換え弁７３と、切換え弁７３を経た供給水（純水または電解還元水）を、研削手段４０を上下方向に貫通して研削ホイール４７の研削面４９ａ側に向けて供給する供給経路７４とを備えている。電解還元水としては、例えば、株式会社日本トリムが提供するトリムイオンＴＩ−９０００によって生成できる。   The electrolytic reduced water supply means 70 is for selectively supplying electrolytic reduced water to the grinding surface 49a of the grinding wheel 49 constituting the grinding wheel 47 attached to the grinding means 40 for finish grinding at an appropriate timing. Thus, the present embodiment is configured to have both the function of selectively supplying pure water for grinding and the function of switching the supply water. Therefore, the electrolytic reduced water supply means 70 includes a pure water supply source 71 that stores pure water, an electrolytic reduced water supply source 72 that stores electrolytic reduced water, and pure water supply and electrolysis from the pure water supply source 71. A switching valve 73 that selectively switches and controls the supply of electrolytic reduced water from the reduced water supply source 72 and feed water (pure water or electrolytic reduced water) that has passed through the switching valve 73 penetrates the grinding means 40 in the vertical direction. And a supply path 74 for supplying the grinding wheel 47 toward the grinding surface 49a side. As electrolyzed reduced water, it can produce | generate by the trim ion TI-9000 which Nippon Trim Co., Ltd. provides, for example.

また、供給経路７４は、図２および図３に示すように、スピンドル４４ａの軸心とホイールマウント４５の軸心とに形成され供給孔４４ｂ，４５ｂと、ホイールマウント４５内で軸心の供給孔４５ｂから水平方向に複数に分岐されて下面側に開口させた分岐経路４５ｃと、切換え弁７３側から供給される供給水を基台凹部４８ｂ内に受け入れるように各分岐経路４５ｃに対応させて厚み方向に貫通させてホイール基台４８に形成された複数の水噴出孔４８ｃとからなり、基台凹部４８ｂによる内周側から研削砥石４９の研削面４９ａ側に向けて供給水（純水または電解還元水）の噴出供給が可能とされている。   2 and 3, the supply path 74 is formed in the shaft center of the spindle 44 a and the shaft center of the wheel mount 45, and the supply hole of the shaft center in the wheel mount 45. A branch path 45c branched into a plurality of horizontal directions from 45b and opened to the lower surface side, and a thickness corresponding to each branch path 45c so as to receive the supply water supplied from the switching valve 73 side into the base recess 48b. Water supply holes (pure water or electrolytic water) from the inner peripheral side by the base concave portion 48b toward the grinding surface 49a side of the grinding wheel 49. It is possible to supply reduced water).

このような構成において、研削手段４０による仕上げ研削においては、基本的には、チャックテーブル１１上に保持されたウエーハＷと研削ホイール４７を構成する研削砥石４９との加工点に純水供給源７１から純水を供給しながら研削を行わせるが、従来のように、純水を供給しただけでは、研削砥石４９の研削面４９ａが研削の進行に伴い微細な砥粒の目詰まりが生じ、目詰まりを生じたまま研削動作を継続することで、ウエーハＷの研削面に目視上目立つような比較的大きな引っ掻き傷を発生させてしまう。   In such a configuration, in the finish grinding by the grinding means 40, a pure water supply source 71 is basically provided at a processing point between the wafer W held on the chuck table 11 and the grinding wheel 49 constituting the grinding wheel 47. Grinding is performed while supplying pure water from the surface. However, if pure water is supplied as in the past, the grinding surface 49a of the grinding wheel 49 is clogged with fine abrasive grains as the grinding progresses. By continuing the grinding operation with clogging, a relatively large scratch is generated on the ground surface of the wafer W so as to be noticeable.

そこで、本実施の形態の研削装置１０は、電解還元水供給手段７０を備えることで水の電気分解によって生成された電解還元水を研削水として使用可能とし、例えば、チャックテーブル１１に保持されたウエーハＷを研削する際、ウエーハＷと研削砥石４９との加工点に電解還元水供給手段７０によって電解還元水を供給することで、結果的に、研削砥石４９の研削面４９ａに電解還元水を供給し、アルカリ水となって活性化された電解還元水が研削砥石４９の研削面４９ａに作用して微細な砥粒の脱落を促し目詰まりが生じないようにしたものである。このように微細な砥粒の脱落が促され目詰まりが生じていない研削砥石４９の研削面４９ａでウエーハＷを研削することで、ウエーハＷの研削面に発生する引っ掻き傷を抑制することができる。   Therefore, the grinding apparatus 10 according to the present embodiment includes the electrolytically reduced water supply means 70 so that the electrolytically reduced water generated by the electrolysis of water can be used as the grinding water. For example, the grinding device 10 is held by the chuck table 11. When grinding the wafer W, electrolytic reduced water is supplied to the processing point of the wafer W and the grinding wheel 49 by the electrolytic reduced water supply means 70, and as a result, electrolytic reduced water is supplied to the grinding surface 49 a of the grinding wheel 49. The electrolytically reduced water that is supplied and activated as alkaline water acts on the grinding surface 49a of the grinding wheel 49 to facilitate the removal of fine abrasive grains so that clogging does not occur. By grinding the wafer W with the grinding surface 49a of the grinding wheel 49 that is free from clogging as a result of the removal of fine abrasive grains as described above, scratches generated on the grinding surface of the wafer W can be suppressed. .

具体的には、ウエーハＷを研削手段４０で研削する際には、ウエーハＷと研削ホイール４７を構成する研削砥石４９に電解還元水を供給する初期研削工程と、該初期研削工程の後、電解還元水の供給を停止してウエーハＷと研削ホイール４７を構成する研削砥石４９に純水を供給しながら研削砥石４９でウエーハＷを研削するウエーハ研削工程とを行えばよい。   Specifically, when the wafer W is ground by the grinding means 40, an initial grinding step of supplying electrolytic reduced water to the grinding wheel 49 constituting the wafer W and the grinding wheel 47, and after the initial grinding step, A wafer grinding step of grinding the wafer W with the grinding wheel 49 while supplying pure water to the grinding wheel 49 constituting the wafer W and the grinding wheel 47 may be performed by stopping the supply of reducing water.

まず、仕上げ研削対象となるウエーハＷを保持したチャックテーブル１１が仕上げ研削加工領域Ｅ３に位置付けられて、該ウエーハＷに対して研削手段４０で研削する際、初期研削工程として、切換え弁７３で電解還元水供給源７２側を選択して供給経路７４によって水噴出孔４８ｃからウエーハＷと研削砥石４９との加工点に向けて電解還元水を供給する。この時、ウエーハＷと研削砥石４９とは回転動作中にあり（例えば、チャックテーブル１１側は２０〜５００ｒｐｍであり、スピンドル４４ａ側は５００〜３０００ｒｐｍ）、加工点に向けて電解還元水が供給されることで、結果的に、研削砥石４９の刃先部となる研削面４９ａに電解還元水が供給され、アルカリ水となって活性化された電解還元水が研削砥石４９の研削面４９ａに作用して微細な砥粒の脱落が促され目詰まりが生じないようになる。本発明者の実験によれば、ビトリファイドボンドで構成された研削砥石４９の場合において特に効果的であった。この初期研削工程を行う時間は、研削対象となるウエーハＷの材質、研削砥石４９に生ずる目詰まりの程度等に応じて適宜設定される。   First, when the chuck table 11 holding the wafer W to be subjected to finish grinding is positioned in the finish grinding region E3, and grinding is performed on the wafer W by the grinding means 40, an electrolysis is performed by the switching valve 73 as an initial grinding step. The reduced water supply source 72 side is selected, and electrolytic reduced water is supplied from the water ejection hole 48 c toward the processing point of the wafer W and the grinding wheel 49 by the supply path 74. At this time, the wafer W and the grinding wheel 49 are rotating (for example, 20 to 500 rpm on the chuck table 11 side and 500 to 3000 rpm on the spindle 44a side), and electrolytic reduced water is supplied toward the processing point. As a result, electrolytic reduction water is supplied to the grinding surface 49a which is the cutting edge of the grinding wheel 49, and the electrolytic reduction water activated as alkaline water acts on the grinding surface 49a of the grinding wheel 49. The removal of fine abrasive grains is promoted, and clogging does not occur. According to the experiment of the present inventor, it was particularly effective in the case of the grinding wheel 49 composed of vitrified bonds. The time for performing the initial grinding step is appropriately set according to the material of the wafer W to be ground, the degree of clogging generated in the grinding wheel 49, and the like.

初期研削工程が終了した後は、切換え弁７３を純水供給源７１側に切換えることで、ウエーハ研削工程として、電解還元水供給源７２側からの電解還元水の供給を停止させる一方、供給経路７４によって水噴出孔４８ｃからウエーハＷと研削砥石４９との加工点に向けて純水供給源７１から純水を供給しながら、研削砥石４９でウエーハＷの裏面側を研削面として研削する処理を実行する。この際、初期研削工程を経ることで微細な砥粒の脱落が促され目詰まりが生じていない研削砥石４９の研削面４９ａでウエーハＷを研削することとなり、ウエーハＷの研削面での引っ掻き傷の発生は抑制される。   After the initial grinding process is completed, the switching valve 73 is switched to the pure water supply source 71 side to stop the supply of the electrolytic reduced water from the electrolytic reduced water supply source 72 side as the wafer grinding process. A process of grinding the back surface side of the wafer W with the grinding wheel 49 as a grinding surface while supplying pure water from the pure water supply source 71 toward the processing point of the wafer W and the grinding wheel 49 from the water ejection hole 48c by 74. Execute. At this time, the wafer W is ground by the grinding surface 49a of the grinding wheel 49 which is not clogged because the removal of fine abrasive grains is promoted through the initial grinding process, and the wafer W is scratched on the grinding surface. The occurrence of is suppressed.

なお、本実施の形態では、ウエーハＷの研削の際、電解還元水の供給を初期研削工程として初期段階で行うようにしたが、研削砥石４９における目詰まりの発生具合によっては、例えば、ウエーハ研削工程中の途中で電解還元水の供給を適宜行うようにしてもよい。   In the present embodiment, when grinding the wafer W, the electrolytic reduced water is supplied at the initial stage as the initial grinding process. However, depending on the degree of clogging in the grinding wheel 49, for example, the wafer grinding may be performed. You may make it supply electrolytic reduction water suitably in the middle of a process.

また、電解還元水の供給は、ウエーハＷの研削の際に限らず、適宜タイミングで行えばよい。例えば、ウエーハＷを研削する前に事前に研削ホイール４７を構成する研削砥石４９の研削面４９ａに電解還元水を供給し、その後、ウエーハＷと研削ホイール４７を構成する研削砥石４９の加工点に純水を供給しながら研削砥石４９でウエーハＷを研削するようにしてもよい。   The supply of electrolytic reduced water is not limited to the grinding of the wafer W, and may be performed at an appropriate timing. For example, before grinding the wafer W, electrolytic reduced water is supplied to the grinding surface 49 a of the grinding wheel 49 constituting the grinding wheel 47 in advance, and then the processing point of the grinding wheel 49 constituting the wafer W and the grinding wheel 47 is processed. The wafer W may be ground with the grinding wheel 49 while supplying pure water.

本実施の形態の研削装置１０の場合、ウエーハＷを研削する前の電解還元水の供給は、仕上げ研削終了後、次の仕上げ研削対象となるウエーハＷが粗研削加工領域Ｅ２から仕上げ研削加工領域Ｅ３に位置付けられる移動時間を利用して行うことができる。すなわち、仕上げ研削終了後、チャックテーブル１１からＺ軸方向上方に退避して単独状態にあり回転中の研削砥石４９の研削面４９ａに対して水噴出孔４８ｃから電解還元水を直接的に噴出供給させる。このように、研削砥石４９の刃先部となる研削面４９ａに直接的に電解還元水が供給されることで、アルカリ水となって活性化された電解還元水が研削砥石４９の研削面４９ａに作用して前回の仕上げ研削に伴う微細な砥粒の脱落が促される。   In the case of the grinding apparatus 10 according to the present embodiment, the electrolytic reduced water before grinding the wafer W is supplied from the rough grinding region E2 to the final grinding region after the finish grinding is finished. This can be done using the travel time positioned at E3. That is, after the finish grinding is completed, electrolytic reduced water is directly ejected from the water ejection hole 48c to the grinding surface 49a of the grinding wheel 49 which is in a single state and retracts upward from the chuck table 11 in the Z-axis direction. Let In this way, electrolytic reduction water is directly supplied to the grinding surface 49 a that is the cutting edge of the grinding wheel 49, so that the electrolytic reduction water activated as alkaline water is applied to the grinding surface 49 a of the grinding wheel 49. It acts to facilitate the removal of fine abrasive grains accompanying the last finish grinding.

その後、次に仕上げ研削対象となるウエーハＷを保持したチャックテーブル１１が仕上げ研削加工領域Ｅ３に位置付けられ研削砥石４９が下降して仕上げ研削が開始される時点で、切換え弁７３で純水供給源７１側を選択して供給経路７４によって水噴出孔４８ｃからウエーハＷと研削砥石４９との加工点に向けて純水を供給しながら、研削砥石４９でウエーハＷを研削する。この際、事前の電解還元水の供給に伴い前回仕上げ研削時の微細な砥粒の脱落が促され目詰まりが生じていない研削砥石４９の研削面４９ａでウエーハＷを研削することとなり、ウエーハＷの研削面での引っ掻き傷の発生は抑制される。   After that, when the chuck table 11 holding the wafer W to be subjected to finish grinding is positioned in the finish grinding region E3 and the grinding wheel 49 is lowered and finish grinding is started, the switching valve 73 is used to supply pure water. The wafer W is ground by the grinding wheel 49 while the pure water is supplied from the water ejection hole 48 c toward the processing point of the wafer W and the grinding wheel 49 by the supply path 74 by selecting the 71 side. At this time, the wafer W is ground by the grinding surface 49a of the grinding wheel 49 which is not clogged due to the advance of the electrolytic reduction water, which facilitates the removal of fine abrasive grains during the last finish grinding. Occurrence of scratches on the ground surface is suppressed.

本発明は、上述した実施の形態に限らず、本発明の趣旨を逸脱しない範囲であれば、種々の変形が可能である。例えば、本実施の形態の電解還元水供給手段７０は、電解還元水／純水の選択的な切換え供給が可能な併用構成としたが、仕上げ研削領域Ｅ３においてウエーハＷと研削ホイール４７の加工点に電解還元水を供給する場合であれば、図４に示すように、ウエーハＷと研削ホイール４７の加工点に向けて電解還元水を供給する専用の電解還元水供給手段８０を、純水供給手段８１とは別個に設け、それぞれ選択的に動作させるようにしてもよい。   The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the electrolytically reduced water supply means 70 of the present embodiment has a combined configuration capable of selectively switching supply of electrolytically reduced water / pure water, but the processing points of the wafer W and the grinding wheel 47 in the finish grinding region E3. In the case of supplying electrolytic reduced water to the apparatus, as shown in FIG. 4, a dedicated electrolytic reduced water supply means 80 for supplying electrolytic reduced water toward the processing points of the wafer W and the grinding wheel 47 is supplied with pure water. It may be provided separately from the means 81 and selectively operated.

本発明の実施の形態の研削装置を示す外観斜視図である。1 is an external perspective view showing a grinding apparatus according to an embodiment of the present invention. 仕上げ研削用の研削手段の研削ホイール付近の構成例を示す分解斜視図である。It is a disassembled perspective view which shows the structural example of the grinding wheel vicinity of the grinding means for finish grinding. 仕上げ研削用の研削手段の研削ホイール付近の構成例を示す縦断側面図である。It is a vertical side view which shows the structural example of the grinding wheel vicinity of the grinding means for finish grinding. 変形例の研削装置を示す外観斜視図である。It is an external appearance perspective view which shows the grinding device of a modification.

符号の説明Explanation of symbols

１１ チャックテーブル
４０ 研削手段
４７ 研削ホイール
４９ 研削砥石
４９ａ 研削面
７０ 電解還元水供給手段
Ｗ ウエーハ 11 Chuck table 40 Grinding means 47 Grinding wheel 49 Grinding wheel 49a Grinding surface 70 Electrolytically reduced water supply means

Claims (1)

チャックテーブルに保持されたウエーハを研削ホイールで研削するウエーハ研削方法であって、
ウエーハを研削する際、ウエーハと前記研削ホイールに電解還元水を供給する初期研削工程と、
該初期研削工程の後、電解還元水の供給を停止してウエーハと前記研削ホイールに純水を供給しながら前記研削ホイールでウエーハを研削するウエーハ研削工程と、
を備えることを特徴とするウエーハ研削方法。 A wafer grinding method for grinding a wafer held on a chuck table with a grinding wheel,
An initial grinding step of supplying electrolytic reduced water to the wafer and the grinding wheel when grinding the wafer;
After the initial grinding step, the wafer grinding step of grinding the wafer with the grinding wheel while stopping the supply of electrolytic reduced water and supplying pure water to the wafer and the grinding wheel;
A wafer grinding method characterized by comprising:
JP2006226876A 2006-08-23 2006-08-23 Wafer grinding method Active JP5025188B2 (en)

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