JP5018420B2 - Wire bonding method and wire bonding structure - Google Patents
Wire bonding method and wire bonding structure Download PDFInfo
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- JP5018420B2 JP5018420B2 JP2007299228A JP2007299228A JP5018420B2 JP 5018420 B2 JP5018420 B2 JP 5018420B2 JP 2007299228 A JP2007299228 A JP 2007299228A JP 2007299228 A JP2007299228 A JP 2007299228A JP 5018420 B2 JP5018420 B2 JP 5018420B2
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- wire
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Abstract
Description
本発明は、第1の部材上の電極と第2の部材上の電極との間をワイヤボンディング接続してなるワイヤボンディング方法、および、第1の部材上の電極と第2の部材上の電極との間をワイヤボンディング接続してなるワイヤボンディング構造体に関し、特に、1組の電極間にて複数本のボンディングワイヤを重ねて接続する方法および構造体に関する。 The present invention relates to a wire bonding method in which an electrode on a first member and an electrode on a second member are connected by wire bonding, and an electrode on the first member and an electrode on the second member In particular, the present invention relates to a method and a structure in which a plurality of bonding wires are overlapped and connected between a pair of electrodes.
一般に、この種のワイヤボンディング方法は、先端部からワイヤが引き出されるようになっているワイヤボンディング用のツールによって、半導体チップ上の電極および基板上の電極の一方の電極に1次ボンディングを行い、次に、他方の電極までワイヤを引き出して当該他方の電極に2次ボンディングするという接続工程を行うことで、両電極間をワイヤにより結線するものである(たとえば、特許文献1参照)。 In general, this type of wire bonding method performs primary bonding to one of an electrode on a semiconductor chip and an electrode on a substrate by using a wire bonding tool in which a wire is drawn from the tip. Next, a connection step of drawing the wire to the other electrode and performing secondary bonding to the other electrode is performed to connect the electrodes with the wire (see, for example, Patent Document 1).
ここで、電流容量の点から複数のワイヤが必要である場合、チップの電極と基板の電極の数を増やす必要があるが、そのためには、チップや基板のサイズを大きくする必要がある。その点、上記特許文献1では、チップの電極上にてワイヤを重ねて接続することで、チップサイズの増加を防止していた。
しかしながら、上記従来技術では、基板の電極は依然として複数設ける必要があり、基板サイズの増加は避けられなかった。本発明者は、上記従来技術に基づいて、試作検討を行った。図8は、本発明者の試作としてのワイヤボンディング構造体を示す概略断面図であり、図9は、本発明者の試作としてのワイヤボンディング方法を示す図である。 However, in the above prior art, it is still necessary to provide a plurality of electrodes on the substrate, and an increase in the substrate size is inevitable. The present inventor conducted a trial production based on the above-described conventional technology. FIG. 8 is a schematic cross-sectional view showing a wire bonding structure as a prototype of the present inventor, and FIG. 9 is a diagram showing a wire bonding method as a prototype of the present inventor.
図8に示されるように、複数本のワイヤ30が、基板20上の電極21にて複数箇所で1次ボンディングされ、半導体チップ10上の電極11に重ねられて2次ボンディングされることにより、半導体チップ10と基板20とが複数本のワイヤ30により結線されている。
As shown in FIG. 8, a plurality of
この場合、上述のように、基板20の電極21は複数設けられているので、基板サイズの増加は避けられない。そこで、基板20の電極21も1個として、当該1個の基板20の電極21に対して複数本のワイヤを重ねて1次ボンディングすることを検討した。
In this case, as described above, since a plurality of
しかしながら、この場合、図9に示されるように、ワイヤ30には、当該ワイヤ30における1次ボンディング部30a側の根元部から垂直上方に延びて形成されるネック部Nが存在する。そのため、ツール100により、その上からワイヤ30を重ねて1次ボンディングしようとすると、下側のワイヤ30のネック部Nが潰れて当該下側のワイヤ30が変形してしまい、ワイヤ30を重ねて形成することはできない。
In this case, however, as shown in FIG. 9, the
なお、上記した問題は、半導体チップの電極と基板の電極との間で複数本のワイヤを接続するワイヤボンディング方法およびワイヤボンディング構造体に限らず、第1の部材上の電極と第2の部材上の電極との間をワイヤボンディング接続してなるワイヤボンディング方法およびワイヤボンディング構造体においては、共通して発生する問題であると考えられる。 The above-described problem is not limited to the wire bonding method and the wire bonding structure in which a plurality of wires are connected between the electrode of the semiconductor chip and the electrode of the substrate, but the electrode on the first member and the second member In the wire bonding method and the wire bonding structure in which the upper electrode is connected by wire bonding, it is considered that the problem occurs in common.
本発明は、上記問題に鑑みてなされたものであり、第1の部材上の電極と第2の部材上の電極との間で複数本のワイヤを接続する場合に、1組の電極間にて複数本のワイヤを重ねるにあたって適切なワイヤ形状を形成できるようにすることを目的とする。 This invention is made | formed in view of the said problem, and when connecting a several wire between the electrode on a 1st member, and the electrode on a 2nd member, between one set of electrodes It is an object of the present invention to form an appropriate wire shape when stacking a plurality of wires.
上記目的を達成するため、請求項1に記載の発明では、両電極11、21間で接続工程を複数回行って両電極(11、21)上にワイヤ(30)を複数本重ねて形成するものであって、重ねられた複数本のワイヤ(30)のうち最上部に位置するワイヤ(30)よりも下側に位置するワイヤ(30)を形成する接続工程では、1次ボンディング後のワイヤ(30)の引き出しを、当該ワイヤ(30)における1次ボンディング部(30a)側の根元部から中間部までが2次ボンディング側の電極(21)に向かって水平面から斜め上方の方向に延びる形状となるように行うものであり、
ワイヤ(30)の1次ボンディング部(30a)の一部が、その下側に位置するワイヤ(30)の1次ボンディング部(30a)から2次ボンディング側の電極(21)とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ(30)を重ねていくことを特徴としている。
In order to achieve the above object, in the invention described in claim 1, a plurality of wires (30) are formed on both electrodes (11, 21) by performing a connecting step between the
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .
それによれば、従来問題となっていた1次ボンディング部側の根元部から垂直上方に延びて形成されるワイヤのネック部を無くして、ワイヤを重ねるときの当該ネック部潰れによるワイヤ変形を防止できるため、1組の電極(11、21)間にて複数本のワイヤ(30)を重ねるにあたって適切なワイヤ形状を形成することが可能となる。 According to this, the wire neck portion formed by extending vertically upward from the root portion on the primary bonding portion side, which has been a problem in the past, can be eliminated, and wire deformation due to the neck portion collapse when the wires are stacked can be prevented. Therefore, an appropriate wire shape can be formed when a plurality of wires (30) are stacked between a pair of electrodes (11, 21).
請求項2に記載の発明では、両電極11、21間で接続工程を複数回行って両電極(11、21)上にワイヤ(30)を複数本重ねて形成するものであって、重ねられた複数本のワイヤ(30)のうち最上部に位置するワイヤ(30)よりも下側に位置するワイヤ(30)を形成する接続工程では、1次ボンディング後のワイヤ(30)の引き出しを、形成後の当該ワイヤ(30)における頂部(30c)が1次ボンディングされた電極(11)の垂直上方ではなく両電極(11、21)の間に位置するように、2次ボンディング側の電極(21)に向かって水平面から斜め上方の方向に向かって行うものであり、
ワイヤ(30)の1次ボンディング部(30a)の一部が、その下側に位置するワイヤ(30)の1次ボンディング部(30a)から2次ボンディング側の電極(21)とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ(30)を重ねていくこと特徴としている。
In the second aspect of the invention, the connection process is performed a plurality of times between the
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .
この場合も、従来問題となっていた1次ボンディング部側の根元部から垂直上方に延びて形成されるワイヤのネック部を無くして、ワイヤを重ねるときの当該ネック部潰れによるワイヤ変形を防止できるため、1組の電極(11、21)間にて複数本のワイヤ(30)を重ねるにあたって適切なワイヤ形状を形成することが可能となる。 Also in this case, the wire neck formed by extending vertically upward from the base portion on the primary bonding portion side, which has been a problem in the prior art, can be eliminated, and wire deformation due to the collapse of the neck portion when the wires are stacked can be prevented. Therefore, an appropriate wire shape can be formed when a plurality of wires (30) are stacked between a pair of electrodes (11, 21).
ここで、請求項3に記載の発明のように、上記の斜め上方の方向とは、当該方向と水平面とのなす角度(θ)が10〜45°となっているものであることが好ましい。 Here, as in the invention described in claim 3, the above obliquely upward direction is preferably such that an angle (θ) between the direction and the horizontal plane is 10 to 45 °.
また、請求項1、請求項2に記載の発明のように、ワイヤ(30)の1次ボンディング部(30a)の一部が、その下側に位置するワイヤ(30)の1次ボンディング部(30a)から2次ボンディング側の電極(21)とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ(30)を重ねていくようにすれば、下側のワイヤ(30)の1次ボンディング部(30a)寄りの部分の変形をより小さくできる。 In addition, as in the first and second aspects of the present invention, a part of the primary bonding portion (30a) of the wire (30) is a primary bonding portion ( while shifting the position so as to extend to the outside of the opposite direction to the secondary bonding side of the electrode (21) from 30a), if as to superimpose the wire (30), the first-order lower side of the wire (30) The deformation of the portion near the bonding portion (30a) can be further reduced.
また、請求項4に記載の発明では、第1の部材(10)上の電極(11)および第2の部材(20)上の電極(21)のうち一方の電極に1次ボンディングを行い、他方の電極に2次ボンディングすることにより、両電極(11、21)間をワイヤ(30)により結線してなるワイヤボンディング構造体において、両電極(11、21)間にて両電極(11、21)上にワイヤ(30)を複数本重ねて形成し、重ねられた複数本のワイヤ(30)のうち最上部に位置するワイヤ(30)よりも下側に位置するワイヤ(30)を、当該ワイヤ(30)における1次ボンディング部(30a)側の根元部から中間部までが2次ボンディング側の電極(21)に向かって水平面から斜め上方の方向に延びる形状となるように引き出されており、
ワイヤ(30)の1次ボンディング部(30a)の一部が、その下側に位置するワイヤ(30)の1次ボンディング部(30a)から2次ボンディング側の電極(21)とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ(30)が重ねられていることを特徴とする。
In the invention according to claim 4 , primary bonding is performed on one of the electrode (11) on the first member (10) and the electrode (21) on the second member (20), In a wire bonding structure in which the electrodes (11, 21) are connected by wires (30) by secondary bonding to the other electrode, both electrodes (11, 21) are connected between the electrodes (11, 21). 21) A plurality of wires (30) are formed on top of each other, and a wire (30) positioned below the uppermost wire (30) among the plurality of stacked wires (30), primary bonding portion of the wire (30) (30a) side of the drawn out from the base portion so as to the intermediate portion is made of a horizontal plane toward the secondary bonding side of the electrode (21) and shaped to extend obliquely upward direction And
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .
また、請求項5に記載の発明では、両電極(11、21)間にて両電極(11、21)上にワイヤ(30)を複数本重ねて形成し、重ねられた複数本のワイヤ(30)のうち最上部に位置するワイヤ(30)よりも下側に位置するワイヤ(30)を、当該ワイヤ(30)における頂部(30c)が1次ボンディングされた電極(11)の垂直上方ではなく前記両電極(11、21)の間に位置するように、2次ボンディング側の電極(21)に向かって水平面から斜め上方の方向に向かって引き出されており、
ワイヤ(30)の1次ボンディング部(30a)の一部が、その下側に位置するワイヤ(30)の1次ボンディング部(30a)から2次ボンディング側の電極(21)とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ(30)が重ねられていることを特徴とする。
In the invention according to claim 5 , a plurality of wires (30) are formed on both electrodes (11, 21) between the electrodes (11, 21), and the plurality of wires ( 30), the wire (30) positioned below the uppermost wire (30) is vertically above the electrode (11) to which the top (30c) of the wire (30) is primarily bonded. Without being drawn between the two electrodes (11, 21) and toward the electrode (21) on the secondary bonding side from the horizontal plane in an obliquely upward direction ,
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .
これら請求項4、請求項5の構造体は、それぞれ上記請求項1、上記請求項2に記載のワイヤボンディング方法によって適切に製造されるものであり、これらの構造体によっても、1組の電極(11、21)間にて複数本のワイヤ(30)を重ねるにあたって適切なワイヤ形状を形成することが可能となる。 The structures according to claims 4 and 5 are appropriately manufactured by the wire bonding method according to claim 1 and claim 2, respectively, and a set of electrodes is also formed by these structures. An appropriate wire shape can be formed when a plurality of wires (30) are stacked between (11, 21).
なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.
以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.
(第1実施形態)
図1は、本発明の第1実施形態に係るワイヤボンディング構造体の概略断面構成を示す図である。この構造体は、大きくは、第1の部材としての半導体チップ10と第2の部材としての基板20とが、ワイヤボンディングにより形成されたワイヤ30により電気的に接続されたものである。
(First embodiment)
FIG. 1 is a diagram showing a schematic cross-sectional configuration of a wire bonding structure according to a first embodiment of the present invention. In this structure, the
この構造体において、基板20は、セラミック基板、プリント基板などの各種の配線基板、あるいはリードフレーム、ヒートシンクなどである。基板20の一面(図1中の上面)には、半導体チップ10が搭載されている。そして、半導体チップ10は、図示しないダイボンド材により基板に接合されている。
In this structure, the
半導体チップ10は、シリコン半導体などにトランジスタ素子などによりIC回路を形成してなる一般的なものであり、半導体プロセス形成されたものである。また、上記ダイボンド材は、Agペースト、はんだ、導電性接着剤などである。
The
この半導体チップ10の表面上には、半導体チップ上の電極としてのAl(アルミニウム)やCu(銅)などよりなる電極11が備えられている。また、基板20の一面において半導体チップ10の近傍には、基板上の電極としてのランド21が設けられている。
On the surface of the
このランド21は、基板20が配線基板の場合は、Au(金)やCuなどの箔や導体ペーストなどよりなるものであり、基板20がリードフレームやヒートシンクの場合には、Auなどのめっき膜などよりなる。
The
そして、この基板20のランド21と半導体チップ10の電極11とが、ボンディングワイヤ30を介して結線されている。ここでは、半導体チップ10の電極11を1次ボンディング側、ランド21を2次ボンディング側としてワイヤボンディングされている。
The
さらに、ここでは、両電極11、21間にて当該両電極11、21上にワイヤ30が複数本、本実施形態では3本のワイヤ30が重ねて形成されている。この3本のワイヤ30によって、1組の両電極11、21が結線されることにより、基板20と半導体チップ10とが電気的に接続されている。
Further, here, a plurality of
ここで、ボンディングワイヤ30は、後述するようにボールボンディング法を用いたワイヤボンディングにより形成されたものであり、たとえばAuやCuなどよりなる。そして、3本の各ワイヤ30において半導体チップ10の電極11と接続された部分である1次ボンディング部は、ボール30aである。
Here, the
また、2次ボンディング側であるランド21には、接合性を向上させるためのボール30bが設けられており、各ワイヤ30の2次ボンディング部は、このランド21上のボール30bに接続されている部分である。
The
次に、本実施形態のワイヤボンディング構造体の製造方法について述べる。本ワイヤボンディング構造体は、基板20と半導体チップ10とを上記ダイマウント材を介して接続した後、ワイヤボンディングを行って、半導体チップ10と基板20とを接続することにより形成される。
Next, a method for manufacturing the wire bonding structure according to this embodiment will be described. The wire bonding structure is formed by connecting the
本実施形態におけるボンディングワイヤ30の形成方法すなわちワイヤボンディング方法について、図2、図3を参照して述べる。図2、図3は、本実施形態に係るワイヤボンディング方法を用いたボンディングワイヤ30の接続工程を示す工程図である。
A method for forming the
ここでは、半導体チップ10の電極11と基板20のランド21とは、ボールボンディング法によりワイヤボンドされる。なお、本実施形態におけるワイヤボンディング装置は、一般的なボールボンディングを行うことのできるボールボンディング装置であり、図2に示されるような超音波などにより振動するワイヤボンディング用のツール100を有するものである。
Here, the
そして、ツール100は、その内孔にボンディングワイヤ30を挿入して当該ワイヤ30を保持するとともに、先端部からワイヤ30を引き出すようにしたものである。
And the
本実施形態の接続工程は、半導体チップ10の電極11に1次ボンディングを行い、次に基板20のランド21に2次ボンディングを行うが、この接続工程を両電極11、21間で3回行って、両電極11、21上にワイヤ30を3本重ねて形成する。このとき、図2、図3に示されるように、3本のワイヤ30は、下側のものから順に形成していく。
In the connection process of this embodiment, primary bonding is performed on the
まず、一番下側のワイヤ30すなわち1本目のワイヤ30の接続工程では、2次ボンディング側の電極であるランド21上にプレボールボンドを実行して、図2に示されるように、プレボール30bを作成する。
First, in the connection process of the
このプレボールボンドは、一般的な方法行うことができる。すなわち、図2(a)、(b)に示されるように、ワイヤボンディング用のツール100の先端から引き出されたワイヤ30の先端にボール30bを形成し、ツール100をランド21上に下降させ、続いて、ツール100によりボール30bに対して加重と超音波を印加することにより、ボール30bをランド21に接合する。
This pre-ball bond can be performed by a general method. That is, as shown in FIGS. 2A and 2B, a
そして、ツール100を上昇させることにより、ワイヤ30をプルカットすれば、プレボール30bが形成される。なお、このプレボール30bは、2次ボンディング部における接合性を向上するために設けるものであり、当該接合性が確保されるならば、接続工程において省略してもよい。
And if the
次に、図2(c)に示されるように、1本目のワイヤ30の1次ボンディング、2次ボンディングを行う。図2(c)では、上記ツール100は省略してあるが、このときの当該ツール100の動きを、図2(c)中の破線矢印Y1、Y2、Y3に示す。
Next, as shown in FIG. 2C, primary bonding and secondary bonding of the
図2(c)中の矢印Y1に示されるように、先端に上記ボール30aが設けられたワイヤ30がセットされた上記ツール100を、半導体チップ10の電極11上に下降させ、ツール100により当該ボール30aに対して加重及び超音波印加を行うことにより、半導体チップ10の電極11上に当該ボール30aを接続する。これにより、ボールボンドとしての1次ボンディングが完了する。
As shown by an arrow Y1 in FIG. 2C, the
その後、1次ボンディングに続くワイヤ30の引き出しを、半導体チップ10の電極11の垂直上方ではなく2次ボンディング側の電極であるランド21に向かって水平面Hから斜め上方の方向に行う。この1次ボンディングに続くワイヤ30の引き出しにおける上記ツール100の動きは、図2(c)中の矢印Y2に示されるが、この矢印Y2におけるツールの動きの詳細を図4に示す。
Thereafter, the
この引き出しにおいては、図4(a)、(b)に示されるように、ツール100を高さHの分、半導体チップ10の電極11から垂直に上昇させて1次ボンディング部30aから離し、その後、図4(c)に示されるように、ランド21に向かってツール100を水平方向に移動させ、ランド21上にツール100を位置させる。ここまでが、上記矢印Y2におけるツール100の動きである。
In this extraction, as shown in FIGS. 4A and 4B, the
これにより、上記図2(c)に示されるように、1次ボンディング後のワイヤ30の引き出しが、当該ワイヤ30の1次ボンディング部30aの根元部から中間部までがランド21に向かって水平面Hから斜め上方の方向に延びる形状となるように行われることになる。
As a result, as shown in FIG. 2C, the
また、別の言い方をすれば、1次ボンディング後のワイヤ30の引き出しは、形成後の当該ワイヤ30における頂部30cが1次ボンディングされた半導体チップ10の電極11の垂直上方ではなく両電極11、21の間に位置するように、ランド21に向かって水平面Hから斜め上方の方向に行われる(図2(c)参照)。ここで、ワイヤ30における頂部30cとは、両電極11、21側から見てワイヤ30の最も高い位置にある部位のことである。
In other words, the lead-out of the
こうして、1次ボンディング後の引き出しを行い、その後、図2(c)中の矢印Y3に示されるようにランド21のプレボール30b上方に位置する上記ツール100を、ランド21へ下降させることにより、ワイヤ30をランド21上に着地させ、ステッチ形状にて接合して接続する。
In this way, after the primary bonding is performed, the
この後、ツール100を上昇させることにより、ワイヤ30をプルカットする。これにより、2次ボンディング(ステッチボンド)が完了するとともに、図2(c)に示されるように、1本目のワイヤ30の接続工程が完了する。
Thereafter, the
続いて、図3(a)、(b)に示されるように、下側から2番目のワイヤ30すなわち2本目のワイヤ30の接続工程を行う。この2本目のワイヤ30についても、上記1本目のワイヤ30の接続工程と基本的に同様に行う。具体的には、1本目のワイヤ30の2次ボンディング部の上に、上記プレボール30bを形成し、その後、1本目のワイヤ30の1次ボンディング部30aの上に、2本目のワイヤ30を1次ボンディングする。
Subsequently, as shown in FIGS. 3A and 3B, a connecting process of the
そして、2本目のワイヤ30についても、上記1本目と同様に1次ボンディングに続くワイヤ30の引き出しを行い、その後、プレボール30b上に2本目のワイヤ30を2次ボンディングする。それにより、1本目のワイヤ30の上に2本目のワイヤ30が重ねて形成される。
As for the
その後、図3(c)、(d)に示されるように、一番上側のワイヤ30すなわち3本目のワイヤ30の接続工程を行う。この3本目については、さらにその上に重ねられるワイヤが無いため、ここでは、一般的なワイヤボンディングを行う。
Thereafter, as shown in FIGS. 3C and 3D, a connection process of the
つまり、3本目のワイヤ30については、1次ボンディング後のワイヤ30の引き出しを、当該ワイヤ30の1次ボンディング部30a側の根元部から中間部までが半導体チップ10の電極11の垂直上方に延びる形状となるように行い、形成後の3本目のワイヤ30における頂部30cを、半導体チップ10の電極11の垂直上方に位置させる。
That is, with respect to the
こうして、1組の電極11とランド21との間で、3本のワイヤ30が積み重ねられて形成される。この結果、上記図1に示す構成を有する本実施形態のワイヤボンディング構造体が製造される。
Thus, the three
ところで、本実施形態によれば、従来問題となっていた1次ボンディング側の根元部から垂直上方に延びて形成されるワイヤのネック部(上記図9参照)を無くして、ワイヤを重ねるときの当該ネック部潰れによるワイヤ変形を防止できるため、1組の電極11、21間にて複数本のワイヤ30を重ねるにあたって適切なワイヤ形状を形成することが可能となる。
By the way, according to this embodiment, the wire neck portion (see FIG. 9) formed by extending vertically upward from the root portion on the primary bonding side, which has been a problem in the past, is eliminated, and the wires are overlapped. Since wire deformation due to the crushing of the neck portion can be prevented, an appropriate wire shape can be formed when a plurality of
そして、半導体チップ10上に設ける電極11の個数を少なくすることができるだけでなく、ランド21の個数も少なくでき、チップサイズおよび基板サイズを小さくすることが可能になる。また、本実施形態の構造体においては、上記図2(c)に示したような1次ボンディング後のワイヤ30の引き出し形状がそのまま継承されている。
Further, not only can the number of
ここで、上記した1次ボンディング後のワイヤ30の引き出しは、2次ボンディング側のランド21に向かって水平面Hから斜め上方の方向に向かって行われるが、当該斜め上方の方向とは、当該斜め上方の方向と上記水平面Hとのなす角度θ(上記図1、図2(c)、図3(b)参照)が10°以上45°以下となっていることが好ましい。以下、この角度を引き出し角度θという。
Here, the drawing of the
このように引き出し角度θを10〜45°とすれば、その上側のワイヤ30を1次ボンディングするときに、その下側のワイヤ30が変形しにくく、且つ半導体チップ10に接触して短絡しにくいものとなる。
Thus, when the lead angle θ is 10 to 45 °, when the
図5は、この引き出し角度θと上記高さH(図4(b)参照)との関係を示す図である。角度θを大きくしていくには、上記高さHを大きくしていけばよい。予めこの図5の関係を求めておけば、この関係に基づいて、高さHを決めてツール100を移動させれば、上記引き出し角度θを所望の大きさにすることができる。
FIG. 5 is a diagram showing the relationship between the pulling angle θ and the height H (see FIG. 4B). In order to increase the angle θ, the height H may be increased. If the relationship of FIG. 5 is obtained in advance, the drawing angle θ can be set to a desired size by determining the height H and moving the
なお、本実施形態の上記例では、半導体チップ10の電極11を1次ボンディング側、ランド21を2次ボンディング側としてワイヤボンディングしたものであったが、ランド21を1次ボンディング側、半導体チップ10の電極11を2次ボンディング側として、上記同様にワイヤボンディングを行ってもよい。
In the above example of the present embodiment, the
また、本実施形態において、1番上の3本目のワイヤ30についても、1本目および2本目のワイヤ30と同様の要領で、1次ボンディングに続くワイヤの引き出しを行うようにしてもよい。
In the present embodiment, the
また、上記例においては、半導体チップ10の電極11とランド21との間を3本のワイヤ30でワイヤボンディングするように構成したが、これに限るものではなく、2本または4本以上のワイヤでワイヤボンディングするようにしてもよい。
In the above example, the
(第2実施形態)
図6は、本発明の第2実施形態に係るワイヤボンディング方法を用いたボンディングワイヤ30の接続工程を示す工程図である。
(Second Embodiment)
FIG. 6 is a process diagram illustrating a connection process of the
本実施形態では、上記第1実施形態と同様に、1本目のワイヤ30の接続工程では、ランド21上にプレボール30bを作成し、その後、上記第1実施形態における1本目のワイヤ30と同様に、1次ボンディング、1次ボンディングに続くワイヤ30の引き出し、2次ボンディングを行い、1本目のワイヤ30を接続する。
In the present embodiment, as in the first embodiment, in the connection process of the
この後、2本目のワイヤ30の接続工程では、まず、図6(a)に示されるように、1本目のワイヤ30の2次ボンディング部の上に、上記プレボール30bを形成する。そして、図6(b)に示されるように、2本目のワイヤ30の1次ボンディングにおいては、当該2本目のワイヤ30の1次ボンディング部30aの一部が、その下側に位置する1本目のワイヤ30の1次ボンディング部30aからはみ出すようにする。
Thereafter, in the step of connecting the
このはみ出し方向は、2次ボンディング側の電極であるランド21とは反対側の方向(図6(b)中の右方向)とする。このように、2本目のワイヤ30については、1本目のワイヤ30の1次ボンディング部30aに対して位置をずらしながら、1次ボンディングを行う。そして、2本目のワイヤ30の2次ボンディングを行うことによって、2本目のワイヤ30が形成される。
The protruding direction is the direction opposite to the
同様に、図6(c)、(d)に示されるように、3本目のワイヤ30についても、その下側に位置する2本目のワイヤ30の1次ボンディング部30aからランド21とは反対側の方向へはみ出るように位置をずらしながら、1次ボンディング、さらには2次ボンディングを行う。こうして、本実施形態においても、3本のワイヤ30が重ねられて形成される。
Similarly, as shown in FIGS. 6C and 6D, the
本実施形態のワイヤボンディング方法によれば、ワイヤ30を重ねて行くにあたって、その下側に位置するワイヤ30の1次ボンディング部30a寄りの部分に対して、その上側のワイヤ30の1次ボンディング部30aが外れた位置に形成されるため、当該下側のワイヤ30の1次ボンディング部30寄りの部分の変形をより小さくできる。
According to the wire bonding method of the present embodiment, when the
(第3実施形態)
図7は、本発明の第3実施形態に係るワイヤボンディング方法を用いたボンディングワイヤ30の接続工程を示す工程図である。
(Third embodiment)
FIG. 7 is a process diagram showing a connection process of the
本実施形態では、上記第1実施形態と同様に、半導体チップ10の電極11を1次ボンディング側、ランド21を2次ボンディング側として1本目のワイヤ30の接続工程を行い、1本目のワイヤ30を形成する。
In the present embodiment, as in the first embodiment, the connection process of the
次に、本実施形態では、ランド21を1次ボンディング側、半導体チップ10の電極11を2次ボンディング側として、2本目のワイヤ30を形成する。その後は、半導体チップ10の電極11を1次ボンディング側、ランド21を2次ボンディング側として3本目のワイヤ30を形成する。
Next, in the present embodiment, the
つまり、本実施形態では、ワイヤの張り方の順序を交互にすることで、上側のワイヤ30における2次ボンディング側のプレボールを、その下側のワイヤ30の1次ボンディング部30aであるボールによって兼用できるため、ボール形成時間やツール100の移動時間を短くできる。
That is, in this embodiment, the pre-ball on the secondary bonding side of the
また、本実施形態において、ランド21を1次ボンディング側としてワイヤ30を形成する場合でも、上記実施形態と同様に、1次ボンディング後のワイヤ30の引き出しを、当該ワイヤ30の1次ボンディング部30aの根元部から中間部までがランド21に向かって水平面Hから斜め上方の方向に延びる形状となるように行うことはもちろんである。
Further, in the present embodiment, even when the
(他の実施形態)
なお、上記実施形態では、第1の部材は半導体チップ、第2の部材は基板であったが、第1の部材、第2の部材は、共にワイヤボンディングされる電極を有するものであればよく、これらに限定されるものではない。たとえば、第1の部材および第2の部材の組合せとしては、当該両部材がともに基板である場合や、ともに半導体チップである場合も可能である。
(Other embodiments)
In the above embodiment, the first member is a semiconductor chip, and the second member is a substrate. However, the first member and the second member may be any members as long as they have electrodes that are wire-bonded together. However, it is not limited to these. For example, the combination of the first member and the second member may be a case where both the members are substrates or a semiconductor chip.
10…半導体チップ、11…半導体チップの電極、20…基板、21…基板の電極、
30…ボンディングワイヤ、30a…ボンディングワイヤの1次ボンディング部、
30c…ボンディングワイヤの頂部、100…ツール、θ…引き出し角度。
DESCRIPTION OF
30 ... Bonding wire, 30a ... Primary bonding part of bonding wire,
30c: Top of bonding wire, 100: Tool, θ: Pull-out angle.
Claims (5)
次に、他方の電極まで前記ワイヤ(30)を引き出して当該他方の電極に2次ボンディングするという接続工程を行うことで、前記両電極(11、21)間を前記ワイヤ(30)により結線するワイヤボンディング方法において、
前記両電極(11、21)間で前記接続工程を複数回行って前記両電極(11、21)上に前記ワイヤ(30)を複数本重ねて形成するものであり、
前記重ねられた複数本の前記ワイヤ(30)のうち最上部に位置する前記ワイヤ(30)よりも下側に位置する前記ワイヤ(30)を形成する前記接続工程では、前記1次ボンディング後の前記ワイヤ(30)の引き出しを、当該ワイヤ(30)における1次ボンディング部(30a)側の根元部から中間部までが前記2次ボンディング側の前記電極(21)に向かって水平面から斜め上方の方向に延びる形状となるように行い、
その後、当該ワイヤ(30)を前記2次ボンディング側の前記電極(21)に着地させて、前記2次ボンディングを行うものであり、
前記ワイヤ(30)の前記1次ボンディング部(30a)の一部が、その下側に位置する前記ワイヤ(30)の前記1次ボンディング部(30a)から前記2次ボンディング側の前記電極(21)とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ(30)を重ねていくことを特徴とするワイヤボンディング方法。 The electrode (11) on the first member (10) and the electrode on the second member (20) (by the wire bonding tool (100) in which the wire (30) is drawn from the tip end ( 21) Perform primary bonding on one of the electrodes,
Next, the wire (30) is connected to the other electrode by performing a connecting step of drawing the wire (30) to the other electrode and performing secondary bonding to the other electrode. In the wire bonding method,
The connection step is performed a plurality of times between the electrodes (11, 21) to form a plurality of the wires (30) on the electrodes (11, 21),
In the connecting step of forming the wire (30) positioned below the uppermost wire (30) among the plurality of the stacked wires (30), in the connection step after the primary bonding Pulling out the wire (30) from the base part of the wire (30) on the primary bonding part (30a) side to the intermediate part is obliquely upward from the horizontal plane toward the electrode (21) on the secondary bonding side. Doing so that the shape extends in the direction,
Then, the wire (30) is landed on the electrode (21) on the secondary bonding side, and the secondary bonding is performed .
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding method is characterized in that the wire (30) is piled up while shifting the position so as to protrude in the direction opposite to () .
次に、他方の電極まで前記ワイヤ(30)を引き出して当該他方の電極に2次ボンディングするという接続工程を行うことで、前記両電極(11、21)間を前記ワイヤ(30)により結線するワイヤボンディング方法において、
前記両電極(11、21)間で前記接続工程を複数回行って前記両電極(11、21)上に前記ワイヤ(30)を複数本重ねて形成するものであり、
前記重ねられた複数本の前記ワイヤ(30)のうち最上部に位置する前記ワイヤ(30)よりも下側に位置する前記ワイヤ(30)を形成する前記接続工程では、前記1次ボンディング後の前記ワイヤ(30)の引き出しを、形成後の当該ワイヤ(30)における頂部(30c)が前記1次ボンディングされた前記電極(11)の垂直上方ではなく前記両電極(11、21)の間に位置するように、前記2次ボンディング側の前記電極(21)に向かって水平面から斜め上方の方向に向かって行い、
その後、当該ワイヤ(30)を前記2次ボンディング側の前記電極(21)に着地させて、前記2次ボンディングを行うものであり、
前記ワイヤ(30)の前記1次ボンディング部(30a)の一部が、その下側に位置する前記ワイヤ(30)の前記1次ボンディング部(30a)から前記2次ボンディング側の前記電極(21)とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ(30)を重ねていくことを特徴とするワイヤボンディング方法。 The electrode (11) on the first member (10) and the electrode on the second member (20) (by the wire bonding tool (100) in which the wire (30) is drawn from the tip end ( 21) Perform primary bonding on one of the electrodes,
Next, the wire (30) is connected to the other electrode by performing a connecting step of drawing the wire (30) to the other electrode and performing secondary bonding to the other electrode. In the wire bonding method,
The connection step is performed a plurality of times between the electrodes (11, 21) to form a plurality of the wires (30) on the electrodes (11, 21),
In the connecting step of forming the wire (30) positioned below the uppermost wire (30) among the plurality of the stacked wires (30), in the connection step after the primary bonding The lead (30) of the wire (30) after the formation is formed between the electrodes (11, 21) instead of the top (30c) of the wire (30) between the electrodes (11, 21) rather than vertically above the primary-bonded electrode (11). In order to be located, it is performed from the horizontal plane toward the obliquely upward direction toward the electrode (21) on the secondary bonding side,
Then, the wire (30) is landed on the electrode (21) on the secondary bonding side, and the secondary bonding is performed .
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding method is characterized in that the wire (30) is piled up while shifting the position so as to protrude in the direction opposite to () .
前記両電極(11、21)間にて前記両電極(11、21)上に前記ワイヤ(30)が複数本重ねて形成されており、
前記重ねられた複数本の前記ワイヤ(30)のうち最上部に位置する前記ワイヤ(30)よりも下側に位置する前記ワイヤ(30)は、当該ワイヤ(30)における1次ボンディング部(30a)側の根元部から中間部までが前記2次ボンディング側の前記電極(21)に向かって水平面から斜め上方の方向に延びる形状となるように引き出されており、
前記ワイヤ(30)の前記1次ボンディング部(30a)の一部が、その下側に位置する前記ワイヤ(30)の前記1次ボンディング部(30a)から前記2次ボンディング側の前記電極(21)とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ(30)が重ねられていることを特徴とするワイヤボンディング構造体。 By performing primary bonding on one of the electrodes (11) on the first member (10) and the electrode (21) on the second member (20) and performing secondary bonding on the other electrode, In the wire bonding structure formed by connecting the electrodes (11, 21) with the wire (30),
A plurality of the wires (30) are stacked on the electrodes (11, 21) between the electrodes (11, 21);
The wire (30) positioned below the uppermost wire (30) among the plurality of the stacked wires (30) is a primary bonding portion (30a) of the wire (30). ) Side root part to the middle part are drawn out so as to have a shape extending obliquely upward from the horizontal plane toward the electrode (21) on the secondary bonding side ,
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding structure is characterized in that the wire (30) is overlapped while shifting the position so as to protrude in the direction opposite to () .
前記両電極(11、21)間にて前記両電極(11、21)上に前記ワイヤ(30)が複数本重ねて形成されており、
前記重ねられた複数本の前記ワイヤ(30)のうち最上部に位置する前記ワイヤ(30)よりも下側に位置する前記ワイヤ(30)は、当該ワイヤ(30)における頂部(30c)が前記1次ボンディングされた前記電極(11)の垂直上方ではなく前記両電極(11、21)の間に位置するように、前記2次ボンディング側の前記電極(21)に向かって水平面から斜め上方の方向に向かって引き出されており、
前記ワイヤ(30)の前記1次ボンディング部(30a)の一部が、その下側に位置する前記ワイヤ(30)の前記1次ボンディング部(30a)から前記2次ボンディング側の前記電極(21)とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ(30)が重ねられていることを特徴とするワイヤボンディング構造体。 By performing primary bonding on one of the electrodes (11) on the first member (10) and the electrode (21) on the second member (20) and performing secondary bonding on the other electrode, In the wire bonding structure formed by connecting the electrodes (11, 21) with the wire (30),
A plurality of the wires (30) are stacked on the electrodes (11, 21) between the electrodes (11, 21);
Of the plurality of the stacked wires (30), the wire (30) positioned below the uppermost wire (30) has a top portion (30c) in the wire (30). It is obliquely above the horizontal plane toward the electrode (21) on the secondary bonding side so as to be positioned between the electrodes (11, 21), not vertically above the electrode (11) subjected to primary bonding. Pulled out in the direction ,
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding structure is characterized in that the wire (30) is overlapped while shifting the position so as to protrude in the direction opposite to () .
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US8008785B2 (en) * | 2009-12-22 | 2011-08-30 | Tessera Research Llc | Microelectronic assembly with joined bond elements having lowered inductance |
WO2012071325A1 (en) | 2010-11-24 | 2012-05-31 | Tessera, Inc. | Lead structures with vertical offsets |
JP2015146393A (en) * | 2014-02-03 | 2015-08-13 | カルソニックカンセイ株式会社 | ultrasonic wedge bonding structure |
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