JP5004161B2 - 膜形成材料および膜形成方法 - Google Patents
膜形成材料および膜形成方法 Download PDFInfo
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- JP5004161B2 JP5004161B2 JP2006552911A JP2006552911A JP5004161B2 JP 5004161 B2 JP5004161 B2 JP 5004161B2 JP 2006552911 A JP2006552911 A JP 2006552911A JP 2006552911 A JP2006552911 A JP 2006552911A JP 5004161 B2 JP5004161 B2 JP 5004161B2
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- dicyclopentyldimethoxysilane
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- 238000000034 method Methods 0.000 title claims description 42
- 239000000463 material Substances 0.000 title claims description 40
- 238000000354 decomposition reaction Methods 0.000 claims description 29
- 238000005229 chemical vapour deposition Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000011261 inert gas Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 17
- JWCYDYZLEAQGJJ-UHFFFAOYSA-N dicyclopentyl(dimethoxy)silane Chemical compound C1CCCC1[Si](OC)(OC)C1CCCC1 JWCYDYZLEAQGJJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005587 bubbling Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000011229 interlayer Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 14
- 239000002994 raw material Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 1
- -1 alkyl alkoxide Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- A—HUMAN NECESSITIES
- A22—BUTCHERING; MEAT TREATMENT; PROCESSING POULTRY OR FISH
- A22C—PROCESSING MEAT, POULTRY, OR FISH
- A22C21/00—Processing poultry
- A22C21/0023—Dividing poultry
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
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- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
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- B26D1/08—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a linearly-movable cutting member wherein the cutting member reciprocates of the guillotine type
- B26D1/09—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a linearly-movable cutting member wherein the cutting member reciprocates of the guillotine type with a plurality of cutting members
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- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/06—Arrangements for feeding or delivering work of other than sheet, web, or filamentary form
- B26D7/0625—Arrangements for feeding or delivering work of other than sheet, web, or filamentary form by endless conveyors, e.g. belts
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B26D7/27—Means for performing other operations combined with cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/314—Inorganic layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D2210/00—Machines or methods used for cutting special materials
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- H01L21/02107—Forming insulating materials on a substrate
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Description
その結果、ジシクロペンチルジメトキシシラン[(c−C5H9)2Si(OCH3)2]を原料として作成した膜が層間絶縁膜として非常に有望である事実に到達するに至った。
すなわち、前記の課題は、
化学気相成長方法により膜を形成する為の材料であって、
(c−C5H9)2Si(OCH3)2を含む
ことを特徴とする膜形成材料によって解決される。
(c−C5H9)2Si(OCH3)2からなる
ことを特徴とする膜形成材料によって解決される。
(c−C5H9)2Si(OCH3)2を含む
ことを特徴とする膜形成材料によって解決される。
(c−C5H9)2Si(OCH3)2からなる
ことを特徴とする膜形成材料によって解決される。
化学気相成長方法により基板上に膜を形成する方法であって、
(c−C5H9)2Si(OCH3)2を供給する供給工程と、
前記供給工程で供給された(c−C5H9)2Si(OCH3)2の分解による分解生成物が前記基板上に堆積する堆積工程
とを具備することを特徴とする膜形成方法によって解決される。
(c−C5H9)2Si(OCH3)2を不活性ガスのバブリングにより供給する供給工程と、
前記供給工程で供給された(c−C5H9)2Si(OCH3)2の分解による分解生成物が前記基板上に堆積する堆積工程
とを具備することを特徴とする膜形成方法によって解決される。
(c−C5H9)2Si(OCH3)2を流量が10〜500sccm(特に、50sccm以上。200sccm以下。)の不活性ガスのバブリングにより供給する供給工程と、
前記供給工程で供給された(c−C5H9)2Si(OCH3)2の分解による分解生成物が前記基板上に堆積する堆積工程
とを具備することを特徴とする膜形成方法によって解決される。
2 加熱器・プラズマ放電用電極
3 分解反応炉
4 Si基板
5 ガス流量制御器
6 ガス吹出しシャワーヘッド・プラズマ放電用電極
7 不活性ガス供給路
図1中、1は原料容器、2は加熱器兼プラズマ放電用電極、3は分解反応炉、4はSi基板、5はガス流量制御器、6はガス吹出しシャワーヘッド兼プラズマ放電用電極、7は不活性ガス供給路である。
キャリアガスによるバブリングで気化した(c−C5H9)2Si(OCH3)2が、分解反応炉3内に導かれた。分解反応炉3内は、当初、3.5torrに排気されている。尚、原料ガスの供給により、分解反応炉3内における(c−C5H9)2Si(OCH3)2圧は80torr、不活性ガス圧は245torrになる。
Si基板4は、加熱器兼プラズマ放電用電極2上に保持され、200〜500℃に加熱されている。
加熱器兼プラズマ放電用電極2とガス吹出しシャワーヘッド兼プラズマ放電用電極6との間の距離は100mmとなるように設定されている。そして、電極間には所定の電圧が印加されて200Wのプラズマ放電が起こされている。
そして、(c−C5H9)2Si(OCH3)2の分解・結合・酸化が行われ、Si基板4上に膜が形成された。
又、この膜について、電流−電圧特性を測定した。その結果は、20Vでリーク電流が1.0×10−8A/cm2以下であることが判った。すなわち、絶縁膜として良好である。
更に、膜の容量−電圧特性を調べ、膜厚と電極から比誘電率を算出した。その結果、膜の比誘電率は2.1であった。
更に、膜の機械的強度をナノインデンテイションで調べた。その結果、膜の弾性率は8.3GPaであった。
本比較例1で得られた膜の比誘電率は2.7であった。又、弾性率は3GPaであった。従って、本発明の特長を到底に奏することが出来ない。
本比較例2で得られた膜の比誘電率は2.6であった。又、弾性率は4GPaであった。従って、本発明の特長を到底に奏することが出来ない。
本比較例3で得られた膜の比誘電率は3.6であった。又、弾性率は2GPaであった。従って、本発明の特長を到底に奏することが出来ない。
本比較例4で得られた膜の比誘電率は3.2であった。又、弾性率は4GPaであった。従って、本発明の特長を到底に奏することが出来ない。
本比較例5で得られた膜の比誘電率は3.3であった。又、弾性率は4GPaであった。従って、本発明の特長を到底に奏することが出来ない。
本比較例6では電気的測定が可能な程の均一な膜は出来なかった。従って、本発明の特長を到底に奏することが出来ない。
本比較例7で得られた膜の比誘電率は2.8であった。又、弾性率は3GPaであった。従って、本発明の特長を到底に奏することが出来ない。
その結果、照射時間に比例して誘電率が低下した。そして、照射時間が約90秒程度で誘電率は最低値(照射前に比べて約15%低下)を示した。尚、更に照射を続けると、誘電率は徐々に大きくなったので、照射時間は約130秒以内であるのが好ましかった。
その結果、加熱温度が高くなるにつれて誘電率が低下した。その結果を、下記の表に示す。
表
加熱温度 加熱時間 誘電率
300℃ 30分 2.18
350℃ 30分 2.14
400℃ 30分 1.89
450℃ 30分 1.84
Claims (16)
- 化学気相成長方法により膜を形成する為の材料であって、
ジシクロペンチルジメトキシシランを含む
ことを特徴とする膜形成材料。 - 誘電率が2.2以下の絶縁膜を形成する為の材料である
ことを特徴とする請求項1の膜形成材料。 - 弾性率が5GPa以上の絶縁膜を形成する為の材料である
ことを特徴とする請求項1の膜形成材料。 - Si−O−C−H系の膜を形成する為の材料である
ことを特徴とする請求項1の膜形成材料。 - 化学気相成長方法により基板上に膜を形成する方法であって、
ジシクロペンチルジメトキシシランを供給する供給工程と、
前記供給工程で供給されたジシクロペンチルジメトキシシランの分解による分解生成物が前記基板上に堆積する堆積工程
とを具備することを特徴とする膜形成方法。 - ジシクロペンチルジメトキシシランは不活性ガスのバブリングにより供給される
ことを特徴とする請求項5の膜形成方法。 - 不活性ガスの流量が10〜500sccmである
ことを特徴とする請求項6の膜形成方法。 - ジシクロペンチルジメトキシシランと不活性ガスとの供給割合が前者/後者=1/10〜1/2である
ことを特徴とする請求項6の膜形成方法。 - ジシクロペンチルジメトキシシランと不活性ガスとの分解室における合計圧力が0.1〜10torrである
ことを特徴とする請求項6の膜形成方法。 - ジシクロペンチルジメトキシシランの分解・堆積はプラズマ手段と加熱手段との併用によって行われる
ことを特徴とする請求項5の膜形成方法。 - 電極間距離が20〜250mmの平行平板型電極によるプラズマ手段が用いられて行われる
ことを特徴とする請求項5の膜形成方法。 - 平行平板型電極の一方の電極が基板ステージを兼ねると共に他方の電極がジシクロペンチルジメトキシシランの吹出しシャワーを兼ねているプラズマ手段が用いられて行われる
ことを特徴とする請求項5の膜形成方法。 - 堆積工程で形成された膜に電磁波を照射する電磁波照射工程を更に具備する
ことを特徴とする請求項5の膜形成方法。 - 堆積工程で形成された膜を加熱する加熱工程を更に具備する
ことを特徴とする請求項5の膜形成方法。 - 照射される電磁波は紫外線であって、その出力パワーが1〜10mW/cm2で、照射時間が0.1〜130secである
ことを特徴とする請求項13の膜形成方法。 - 加熱温度が300〜500℃で、加熱時間が1sec〜1時間である
ことを特徴とする請求項14の膜形成方法。
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