JP5003366B2 - 電気光学装置及びその製造方法、並びに電子機器 - Google Patents
電気光学装置及びその製造方法、並びに電子機器 Download PDFInfo
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- JP5003366B2 JP5003366B2 JP2007233694A JP2007233694A JP5003366B2 JP 5003366 B2 JP5003366 B2 JP 5003366B2 JP 2007233694 A JP2007233694 A JP 2007233694A JP 2007233694 A JP2007233694 A JP 2007233694A JP 5003366 B2 JP5003366 B2 JP 5003366B2
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- 238000004519 manufacturing process Methods 0.000 title description 25
- 239000000758 substrate Substances 0.000 claims description 92
- 239000004065 semiconductor Substances 0.000 claims description 68
- 150000004767 nitrides Chemical class 0.000 claims description 37
- 239000010408 film Substances 0.000 description 268
- 239000010410 layer Substances 0.000 description 118
- 239000004973 liquid crystal related substance Substances 0.000 description 54
- 239000003990 capacitor Substances 0.000 description 35
- 230000001443 photoexcitation Effects 0.000 description 28
- 238000000034 method Methods 0.000 description 26
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 22
- 230000000694 effects Effects 0.000 description 16
- 238000003860 storage Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 238000010306 acid treatment Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000007257 malfunction Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- DKNWGRAKEGQOFM-UHFFFAOYSA-N [H]C([H])([H])OP(OC([H])([H])[H])(OC([H])([H])[H])OC([H])([H])[H] Chemical compound [H]C([H])([H])OP(OC([H])([H])[H])(OC([H])([H])[H])OC([H])([H])[H] DKNWGRAKEGQOFM-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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- Liquid Crystal Display Device Control (AREA)
Description
先ず、本実施形態に係る液晶装置の全体構成について、図1及び図2を参照して説明する。ここに、図1は、TFTアレイ基板をその上に形成された各構成要素と共に、対向基板の側から見た液晶装置の概略的な平面図であり、図2は、図1のH−H’断面図である。
以下では、上述した本実施形態に係る液晶装置の製造プロセスについて、図16から図18を参照して説明する。ここに、図16、図17及び図18は夫々、製造プロセスの各工程を、順を追って示す工程図である。尚、図16から図18では、トランジスタ30を画像表示用トランジスタPixとドライバ用トランジスタDrとに分けて示している。
次に、上述した電気光学装置である液晶装置を各種の電子機器に適用する場合について説明する。ここに図19は、プロジェクタの構成例を示す平面図である。以下では、この液晶装置をライトバルブとして用いたプロジェクタについて説明する。
Claims (11)
- 基板と、
該基板上において、互いに交差して延在するデータ線及び走査線と、
前記データ線及び前記走査線の交差に対応して規定される画素毎に設けられた画素電極と、
前記データ線又は前記走査線の延在方向に沿ったチャネル長を有するチャネル領域、前記データ線に電気的に接続されたデータ線側ソースドレイン領域、前記画素電極に電気的に接続された画素電極側ソースドレイン領域、前記チャネル領域及び前記データ線側ソースドレイン領域間に形成された第1の接合領域、並びに前記チャネル領域及び前記画素電極側ソースドレイン領域間に形成された第2の接合領域を有する半導体層と、
前記第1の接合領域を覆うように島状に設けられた第1絶縁膜と、
前記第2の接合領域を覆うように島状に設けられた第2絶縁膜と、
前記チャネル領域にゲート絶縁膜を介して対向すると共に、前記第1及び第2絶縁膜上に延在されるゲート電極と
を備えることを特徴とする電気光学装置。 - 前記基板上で平面的に見て、
前記第1絶縁膜は、前記データ線側ソースドレイン領域の少なくとも一部に重ならないように設けられており、
前記第2絶縁膜は、前記画素電極側ソースドレイン領域の少なくとも一部に重ならないように設けられており、
前記ゲート電極は、前記データ線側ソースドレイン領域の少なくとも一部と重なるように延在されており、前記画素電極側ソースドレイン領域の少なくとも一部と重なるように延在されている
ことを特徴とする請求項1に記載の電気光学装置。 - 前記ゲート絶縁膜は、前記チャネル領域に加えて前記第1及び第2の接合領域に対向する領域に、前記第1及び第2絶縁膜の下地層として形成されている
ことを特徴とする請求項1又は2に記載の電気光学装置。 - 前記ゲート絶縁膜は、前記第1及び第2の接合領域に対向する領域に形成されておらず、
前記第1及び第2絶縁膜は夫々、前記ゲート絶縁膜よりも厚い
ことを特徴とする請求項1又は2に記載の電気光学装置。 - 前記第1及び第2絶縁膜は、互いに同一層に同一膜で形成されることを特徴とする請求項1から4のいずれか一項に記載の電気光学装置。
- 前記第1絶縁膜は、前記基板上で平面的に見て、前記第1の接合領域に加えて、前記データ線側ソースドレイン領域を少なくとも部分的に覆うように設けられており、
前記ゲート電極は、前記第1絶縁膜における前記データ線側ソースドレイン領域を覆うように延在されている
ことを特徴とする請求項1に記載の電気光学装置。 - 前記第2絶縁膜は、前記基板上で平面的に見て、前記第2の接合領域に加えて、前記画素電極側ソースドレイン領域を少なくとも部分的に覆うように設けられており、
前記ゲート電極は、前記第2絶縁膜における前記画素電極側ソースドレイン領域を覆うように延在されている
ことを特徴とする請求項1に記載の電気光学装置。 - 前記第1及び第2絶縁膜の少なくとも一方は、前記基板上で平面的に見て、前記チャネル領域から所定距離隔てた位置に配置されていることを特徴とする請求項1から7のいずれか一項に記載の電気光学装置。
- 前記第1及び第2絶縁膜の少なくとも一方は、前記半導体層に窒化膜を介して対向するように配置されていることを特徴とする請求項1から8のいずれか一項に記載の電気光学装置。
- 前記第2の接合領域は、前記基板上で平面的に見て、前記データ線及び前記走査線の交差する交差領域内に少なくとも部分的に配置されていることを特徴とする請求項1から9のいずれか一項に記載の電気光学装置。
- 請求項1から10のいずれか一項に記載の電気光学装置を具備してなることを特徴とする電子機器。
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JP2007233694A JP5003366B2 (ja) | 2007-09-10 | 2007-09-10 | 電気光学装置及びその製造方法、並びに電子機器 |
US12/185,195 US7830465B2 (en) | 2007-09-10 | 2008-08-04 | Electro-optical device and electronic apparatus |
CN2008102159182A CN101388400B (zh) | 2007-09-10 | 2008-09-09 | 电光装置及其制造方法以及电子设备 |
KR1020080089260A KR20090026741A (ko) | 2007-09-10 | 2008-09-10 | 전기 광학 장치 및 그 제조 방법, 그리고 전자 기기 |
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JP (1) | JP5003366B2 (ja) |
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WO2010032611A1 (en) * | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5521495B2 (ja) * | 2009-11-04 | 2014-06-11 | セイコーエプソン株式会社 | 半導体装置用基板、半導体装置及び電子機器 |
JP2015206819A (ja) * | 2014-04-17 | 2015-11-19 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6433169B2 (ja) * | 2014-06-23 | 2018-12-05 | 株式会社ジャパンディスプレイ | 薄膜半導体装置 |
CN104485338B (zh) * | 2014-12-15 | 2017-06-20 | 京东方科技集团股份有限公司 | 阵列基板及制作方法、液晶显示面板和反射式液晶显示器 |
CN105161496A (zh) * | 2015-07-30 | 2015-12-16 | 京东方科技集团股份有限公司 | 一种薄膜晶体管阵列基板及其制造方法、显示装置 |
WO2024084815A1 (ja) * | 2022-10-19 | 2024-04-25 | ソニーセミコンダクタソリューションズ株式会社 | 表示装置 |
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US6590553B1 (en) * | 1999-07-23 | 2003-07-08 | Nec Corporation | Liquid crystal display device and method for driving the same |
JP3386017B2 (ja) * | 1999-10-15 | 2003-03-10 | 日本電気株式会社 | 液晶表示装置用の薄膜トランジスタの製造方法 |
JP3731447B2 (ja) | 2000-06-15 | 2006-01-05 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法 |
JP3870897B2 (ja) | 2002-01-07 | 2007-01-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP2004004722A (ja) * | 2002-04-25 | 2004-01-08 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2004053630A (ja) * | 2002-07-16 | 2004-02-19 | Sharp Corp | 液晶表示装置及びその製造方法 |
JP4360151B2 (ja) * | 2003-08-11 | 2009-11-11 | セイコーエプソン株式会社 | 基板装置の製造方法 |
JP4645022B2 (ja) * | 2003-11-27 | 2011-03-09 | 日本電気株式会社 | 薄膜トランジスタアレイ基板及びアクティブマトリクス型液晶表示装置 |
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JP3969439B2 (ja) * | 2005-07-27 | 2007-09-05 | セイコーエプソン株式会社 | 電気光学装置 |
JP4876548B2 (ja) | 2005-11-22 | 2012-02-15 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
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US20090065783A1 (en) | 2009-03-12 |
KR20090026741A (ko) | 2009-03-13 |
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