JP4994216B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4994216B2 JP4994216B2 JP2007331256A JP2007331256A JP4994216B2 JP 4994216 B2 JP4994216 B2 JP 4994216B2 JP 2007331256 A JP2007331256 A JP 2007331256A JP 2007331256 A JP2007331256 A JP 2007331256A JP 4994216 B2 JP4994216 B2 JP 4994216B2
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- Prior art keywords
- circuit
- film
- demodulated signal
- semiconductor device
- signal generation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0723—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/0701—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management
- G06K19/0702—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips at least one of the integrated circuit chips comprising an arrangement for power management the arrangement including a battery
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
- G06K19/07773—Antenna details
- G06K19/07786—Antenna details the antenna being of the HF type, such as a dipole
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/40—Near-field transmission systems, e.g. inductive or capacitive transmission systems characterised by components specially adapted for near-field transmission
- H04B5/48—Transceivers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
- H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
- H04B5/77—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for interrogation
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- Engineering & Computer Science (AREA)
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- Computer Networks & Wireless Communication (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Semiconductor Integrated Circuits (AREA)
- Near-Field Transmission Systems (AREA)
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
Description
(実施の形態1)
(実施の形態2)
(実施の形態3)
(実施の形態4)
(実施の形態5)
(実施の形態6)
(実施の形態7)
102 アンテナ回路
104 アナログ回路
106 デジタル回路
108 メモリ回路
110 リーダ/ライタ
112 電源回路
114 変調回路
116 リーダ/ライタ
118 通信回線
120 制御装置
130 アナログ回路
150 復調信号生成回路
152 入力部
154 第1の復調回路
156 第2の復調回路
158 第1のバイアス回路
160 第2のバイアス回路
162 コンパレータ
164 アナログバッファ回路
166 出力部
200 電源回路
201 復調信号生成回路
202 復調信号生成回路
204 変調回路
206 入出力部
208 出力部
210 出力部
212 出力部
214 出力部
216 入力部
218 入力部
300 第1の容量
302 整流部
304 平滑化容量
306 遅延回路
400 入力部
402 第1の容量
404 第1のダイオード
406 第2のダイオード
408 第1の抵抗
410 第2の容量
412 第2の抵抗
414 第3の容量
416 出力部
500 入力部
502 第1の復調回路
504 第2の復調回路
506 第1のバイアス回路
508 第2のバイアス回路
510 コンパレータ
512 アナログバッファ回路
514 出力部
518 入力部
600 入力部
602 第1の容量
604 第1のダイオード
606 第2のダイオード
608 第1の抵抗
610 第2の容量
612 第2の抵抗
614 第3の容量
616 出力部
618 回路
620 入力部
622 第1の容量
624 第1のダイオード
626 第2のダイオード
628 第1の抵抗
630 第2の容量
632 第2の抵抗
634 第3の容量
636 出力部
638 回路
700 n型TFT
702 n型TFT
704 p型TFT
706 p型TFT
708 n型TFT
710 n型TFT
712 p型TFT
714 p型TFT
800 入力部
800A 入力部
800B 入力部
802 容量
802A 容量
802B 容量
804 第1の抵抗
804A 第1の抵抗
804B 第1の抵抗
806 第2の抵抗
806A 第2の抵抗
806B 第2の抵抗
808 出力部
808A 出力部
808B 出力部
900A 入力部
900B 入力部
902 第1のTFT
904 第2のTFT
906 第3のTFT
908 第4のTFT
910 第5のTFT
912 出力部
914 配線
914B 配線
916 TFT
916B TFT
916C TFT
918 入力部
1000 入力部
1000B 入力部
1001 ソースフォロワ回路
1001B ソースフォロワ回路
1002 インバータ回路
1003 定電流回路
1003B 定電流回路
1004 インバータ回路
1005 出力部
1005B 出力部
1100 入力部
1102 入力部
1104 インバータ
1106 フリップフロップ回路
1108 セレクタ回路
1110 出力部
1112 出力部
1200 チップ
1201 アンテナ
1202 チップ
1203 アンテナ
1204 チップ
1205 アンテナ
1206 チップ
1207 アンテナ
1208 チップ
1209 アンテナ
1400 波形
1401 波形
1402 領域
1403 波形
1404 波形
1405 領域
1406 波形
1407 領域
1408 領域
1500 半導体装置
1800 半導体装置
1802 アンテナ回路
1803 充放電回路
1804 バッテリー
1805 電源回路
1806 復調信号生成回路
1807 復調信号生成回路
1808 変調回路
1809 制御回路
1810 記憶回路
1811 リーダ/ライタ
1812 通信回線
1813 制御装置
2000 半導体装置
3400a 薄膜トランジスタ
3400b 薄膜トランジスタ
3400c 薄膜トランジスタ
3400e 薄膜トランジスタ
3400f 薄膜トランジスタ
3401 基板
3402 絶縁膜
3403 剥離層
3404 絶縁膜
3405 非晶質半導体膜
3405a 結晶質半導体膜
3405b 結晶質半導体膜
3405c 結晶質半導体膜
3405d 結晶質半導体膜
3405e 結晶質半導体膜
3405f 結晶質半導体膜
3406 ゲート絶縁膜
3407 ゲート電極
3407a 導電膜
3407b 導電膜
3408 不純物領域
3409 不純物領域
3410 絶縁膜
3411 不純物領域
3412a 絶縁膜
3412b 絶縁膜
3413 導電膜
3414 絶縁膜
3415a 導電膜
3415b 導電膜
3416 導電膜
3417 導電膜
3418 絶縁膜
3419 素子形成層
3420 シート材
3421 シート材
3431a 導電膜
3431b 導電膜
3432a 開口部
3432b 開口部
3434a 導電膜
3434b 導電膜
3436a 導電膜
3436b 導電膜
3437 樹脂
3438 導電性粒子
3481 負極活物質層
3482 固体電解質層
3483 正極活物質層
3484 集電体薄膜
3485 層間膜
3486 配線層
3489 二次電池
3500 半導体基板
3502 絶縁膜
3504 領域
3506 領域
3507 pウェル
3532 絶縁膜
3534 絶縁膜
3536 導電膜
3538 導電膜
3540 ゲート電極
3542 ゲート電極
3548 レジストマスク
3550 チャネル形成領域
3552 不純物領域
3566 レジストマスク
3568 チャネル形成領域
3570 不純物領域
3572 絶縁膜
3574 配線
3591 負極活物質層
3592 固体電解質層
3593 正極活物質層
3594 集電体薄膜
3595 配線層
3596 層間膜
3597 配線
3600 基板
3602 絶縁膜
3604 絶縁膜
3606 レジストマスク
3608 凹部
3610 絶縁膜
3611 絶縁膜
3612 領域
3613 領域
3614 領域
3615 pウェル
3632 絶縁膜
3634 絶縁膜
3636 導電膜
3638 導電膜
3640 導電膜
3642 導電膜
3654 サイドウォール
3656 チャネル形成領域
3658 不純物領域
3660 低濃度不純物領域
3662 チャネル形成領域
3664 不純物領域
3666 低濃度不純物領域
3677 絶縁膜
3678 開口部
3680 導電膜
3682a 導電膜
3682d 導電膜
3691 負極活物質層
3692 固体電解質層
3693 正極活物質層
3694 集電体薄膜
3695 配線層
3696 層間膜
3697 配線
3700 半導体装置
Claims (10)
- アンテナ回路と、
前記アンテナ回路に電気的に接続された第1の復調信号生成回路と、
前記アンテナ回路に電気的に接続され、かつ、前記第1の復調信号生成回路よりも変調度の小さい信号を復調する第2の復調信号生成回路と、
前記アンテナ回路を介して受信した信号に応じて、前記第1の復調信号生成回路又は前記第2の復調信号生成回路のどちらを用いるかについて選択を行う選択回路と、を有し、 前記第2の復調信号生成回路は、
前記アンテナ回路に電気的に接続された入力部を有する第1の復調回路と、
前記入力部に電気的に接続された、前記第1の復調回路とは逆の極性の電気信号を復調する第2の復調回路と、
前記第1の復調回路の出力部に電気的に接続された入力部を有する第1のバイアス回路と、
前記第2の復調回路の出力部に電気的に接続された入力部を有する第2のバイアス回路と、
第1の入力部と第2の入力部を有するコンパレータと、を有し、
前記第1のバイアス回路の出力部は前記第1の入力部に電気的に接続され、
前記第2のバイアス回路の出力部は前記第2の入力部に電気的に接続されていることを特徴とする無線通信可能な半導体装置。 - アンテナ回路と、
前記アンテナ回路に電気的に接続された第1の復調信号生成回路と、
前記アンテナ回路に電気的に接続され、かつ、前記第1の復調信号生成回路よりも変調度の小さい信号を復調する第2の復調信号生成回路と、
前記アンテナ回路を介して受信した信号に応じて、前記第1の復調信号生成回路又は前記第2の復調信号生成回路のどちらを用いるかについて選択を行う選択回路と、を有し、 前記第2の復調信号生成回路は、
前記アンテナ回路に電気的に接続された入力部を有する第1の復調回路と、
前記入力部に電気的に接続された、前記第1の復調回路とは逆の極性の電気信号を復調する第2の復調回路と、
前記第1の復調回路の出力部に電気的に接続された入力部を有する第1のバイアス回路と、
前記第2の復調回路の出力部に電気的に接続された入力部を有する第2のバイアス回路と、
第1の入力部と第2の入力部を有するコンパレータと、
前記コンパレータの出力部に電気的に接続されたアナログバッファ回路と、を有し、
前記第1のバイアス回路の出力部は前記第1の入力部に電気的に接続され、
前記第2のバイアス回路の出力部は前記第2の入力部に電気的に接続されていることを特徴とする無線通信可能な半導体装置。 - 請求項2において、
前記アナログバッファ回路はソースフォロワ回路と、定電流回路と、インバータ回路と、を有することを特徴とする無線通信可能な半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第1のバイアス回路の出力と前記第2のバイアス回路の出力に存在するノイズは同位相であることを特徴とする無線通信可能な半導体装置。 - 請求項1乃至請求項4のいずれか一において、
前記第1の復調信号生成回路は、変調度90%以上100%以下の信号を復調し、
前記第2の復調信号生成回路は、変調度10%以上30%以下の信号を復調することを特徴とする無線通信可能な半導体装置。 - 請求項1乃至請求項5のいずれか一において、
前記選択回路はインバータ回路と、フリップフロップ回路と、セレクタ回路と、を有することを特徴とする無線通信可能な半導体装置。 - 請求項1乃至請求項6のいずれか一において、
前記コンパレータは差動回路、差動増幅器、又はオペアンプのいずれか一を有することを特徴とする無線通信可能な半導体装置。 - 請求項1乃至請求項7のいずれか一において、
前記半導体装置が無線により充電可能なバッテリーを有することを特徴とする無線通信可能な半導体装置。 - 請求項1乃至請求項8のいずれか一において、
前記選択回路を有するデジタル回路を有し、
前記第1の復調信号生成回路によって復調された第1の復調信号は前記デジタル回路に入力され、
前記第2の復調信号生成回路によって復調された第2の復調信号は前記デジタル回路に入力され、
前記デジタル回路による復調信号のモニターは、前記第1の復調信号の波形の形状のみを用いて行われることを特徴とする無線通信可能な半導体装置。 - 請求項1乃至請求項9のいずれか一において、
前記選択回路は、前記アンテナ回路を介して受信した信号の変調度に応じて前記第1の復調信号生成回路又は前記第2の復調信号生成回路のいずれか一方を選択し、他方を停止させることを特徴とする無線通信可能な半導体装置。
Priority Applications (1)
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JP2007331256A JP4994216B2 (ja) | 2006-12-25 | 2007-12-24 | 半導体装置 |
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JP2006347086 | 2006-12-25 | ||
JP2006347086 | 2006-12-25 | ||
JP2006350344 | 2006-12-26 | ||
JP2006350344 | 2006-12-26 | ||
JP2007331256A JP4994216B2 (ja) | 2006-12-25 | 2007-12-24 | 半導体装置 |
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JP2008182687A JP2008182687A (ja) | 2008-08-07 |
JP2008182687A5 JP2008182687A5 (ja) | 2011-01-20 |
JP4994216B2 true JP4994216B2 (ja) | 2012-08-08 |
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US (1) | US7877068B2 (ja) |
EP (1) | EP2104910B1 (ja) |
JP (1) | JP4994216B2 (ja) |
KR (1) | KR101516660B1 (ja) |
CN (1) | CN101548286B (ja) |
WO (1) | WO2008078661A1 (ja) |
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CN101278534B (zh) * | 2005-08-11 | 2011-06-08 | 株式会社半导体能源研究所 | 半导体器件和无线通信*** |
US8428528B2 (en) * | 2007-10-24 | 2013-04-23 | Biotronik Crm Patent Ag | Radio communications system designed for a low-power receiver |
US8086200B2 (en) * | 2007-10-24 | 2011-12-27 | Biotronik Crm Patent Ag | Radio communications system designed for a low-power receiver |
KR101563139B1 (ko) * | 2008-09-19 | 2015-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
EP2380266B1 (en) * | 2008-12-18 | 2016-03-16 | Nxp B.V. | Charge-pump circuit |
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- 2007-12-14 WO PCT/JP2007/074603 patent/WO2008078661A1/en active Application Filing
- 2007-12-14 EP EP07851010.4A patent/EP2104910B1/en not_active Expired - Fee Related
- 2007-12-14 CN CN2007800449659A patent/CN101548286B/zh not_active Expired - Fee Related
- 2007-12-21 US US12/003,354 patent/US7877068B2/en not_active Expired - Fee Related
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KR20090094246A (ko) | 2009-09-04 |
KR101516660B1 (ko) | 2015-05-04 |
CN101548286A (zh) | 2009-09-30 |
EP2104910A4 (en) | 2014-01-08 |
US7877068B2 (en) | 2011-01-25 |
US20080153450A1 (en) | 2008-06-26 |
CN101548286B (zh) | 2012-10-10 |
EP2104910B1 (en) | 2017-09-20 |
WO2008078661A1 (en) | 2008-07-03 |
JP2008182687A (ja) | 2008-08-07 |
EP2104910A1 (en) | 2009-09-30 |
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