JP4981013B2 - 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet - Google Patents
完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet Download PDFInfo
- Publication number
- JP4981013B2 JP4981013B2 JP2008289444A JP2008289444A JP4981013B2 JP 4981013 B2 JP4981013 B2 JP 4981013B2 JP 2008289444 A JP2008289444 A JP 2008289444A JP 2008289444 A JP2008289444 A JP 2008289444A JP 4981013 B2 JP4981013 B2 JP 4981013B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- trench
- gate
- source
- body region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 210000000746 body region Anatomy 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000002301 combined effect Effects 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 10
- 230000009471 action Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
上述の実施例は本発明を説明するためのものであり、本発明の実施形態を限定しようとするものではない。本発明の原理に基づく他の様々な実施形態が当業者には明らかであろう。本発明の範囲は以下の請求項によってのみ限定される。
Claims (6)
- トレンチゲート型パワーMOSFETであって、
半導体基板と、
溝形状のトレンチ内に配置されたゲートであって、前記トレンチが前記基板の上側表面から前記基板の内部に延在しており、前記ゲートが第1導電型の材料でドープされている、該ゲートと、
前記上側表面に隣接した前記第1導電型のソース領域と、
前記ソース領域の下層をなし、前記ソース領域とソース−ボディ接合部を形成している前記第1導電型とは異なる第2導電型のボディ領域と、
前記ボディ領域の下層をなし、前記ボディ領域とドレイン−ボディ接合部を形成している前記第1導電型のドレイン領域と、
前記ゲートに隣接し、第2導電型の深いボディ領域を有するダイオードセルであって、前記深いボディ領域がドレイン電圧をクランプする、該ダイオードセルとを有することを特徴とし、
前記ソース−ボディ接合部と前記ドレイン−ボディ接合部との間で測定された前記ボディ領域の長さは、前記ゲートが前記ソース領域の電圧に等しい電圧でバイアスされている時に、前記ソースーボディ接合部によって形成された第1の空乏領域と前記ドレイン−ボディ接合部によって形成された第2の空乏領域とが前記ボディ領域の長さ方向全体に及ばないような長さであり、
前記ボディ領域の長さ方向の任意の一点において前記長さ方向に対して直角の方向に測定された前記ボディ領域の幅は、前記ゲートが前記ソース領域の電圧に等しい電圧でバイアスされている時に、前記ゲートの効果と、前記ソース−ボディ接合部及び前記ドレイン−ボディ接合部の効果との複合効果が前記ボディ領域の全体を空乏領域化させるような幅であることを特徴とするトレンチ−ゲート型パワーMOSFET。 - 前記ボディ領域の長さは、前記ボディ領域の幅より大きいことを特徴とする請求項1に記載のトレンチ−ゲート型パワーMOSFET。
- 前記ボディ領域がメサ内に形成されており、前記メサが前記トレンチと第2のトレンチとの間に形成され、前記第2のトレンチが前記トレンチの前記メサの反対側に位置していることを特徴とする請求項1に記載のトレンチ−ゲート型パワーMOSFET。
- 前記基板がエピタキシャル層を含み、前記トレンチが前記エピタキシャル層の中に延在していることを特徴とする請求項1に記載のトレンチ−ゲート型パワーMOSFET。
- 複数の前記トレンチを有し、前記トレンチが平行な縞形状のパターンに配列されていることを特徴とする請求項1に記載のトレンチ−ゲート型パワーMOSFET。
- 前記トレンチがポリシリコンを含むことを特徴とする請求項1に記載のトレンチ−ゲート型パワーMOSFET。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/651,232 US5998834A (en) | 1996-05-22 | 1996-05-22 | Long channel trench-gated power MOSFET having fully depleted body region |
US651,232 | 1996-05-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54252197A Division JP4286321B2 (ja) | 1996-05-22 | 1997-05-21 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009060136A JP2009060136A (ja) | 2009-03-19 |
JP2009060136A5 JP2009060136A5 (ja) | 2009-05-28 |
JP4981013B2 true JP4981013B2 (ja) | 2012-07-18 |
Family
ID=24612075
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54252197A Expired - Fee Related JP4286321B2 (ja) | 1996-05-22 | 1997-05-21 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
JP2008289444A Expired - Fee Related JP4981013B2 (ja) | 1996-05-22 | 2008-11-12 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54252197A Expired - Fee Related JP4286321B2 (ja) | 1996-05-22 | 1997-05-21 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
Country Status (7)
Country | Link |
---|---|
US (1) | US5998834A (ja) |
EP (1) | EP0902980B1 (ja) |
JP (2) | JP4286321B2 (ja) |
KR (1) | KR100381845B1 (ja) |
AU (1) | AU3125797A (ja) |
DE (1) | DE69739058D1 (ja) |
WO (1) | WO1997044828A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998834A (en) * | 1996-05-22 | 1999-12-07 | Siliconix Incorporated | Long channel trench-gated power MOSFET having fully depleted body region |
DE69941769D1 (en) * | 1998-02-02 | 2010-01-21 | Cree Inc | Sic transistor |
US6104068A (en) * | 1998-09-01 | 2000-08-15 | Micron Technology, Inc. | Structure and method for improved signal processing |
US6320222B1 (en) * | 1998-09-01 | 2001-11-20 | Micron Technology, Inc. | Structure and method for reducing threshold voltage variations due to dopant fluctuations |
GB9820904D0 (en) * | 1998-09-26 | 1998-11-18 | Koninkl Philips Electronics Nv | Bi-directional semiconductor switch and switch circuit for battery-powered equipment |
JP3494063B2 (ja) * | 1999-02-24 | 2004-02-03 | トヨタ自動車株式会社 | 半導体装置 |
US6855983B1 (en) * | 1998-11-10 | 2005-02-15 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device having reduced on resistance |
US6777745B2 (en) * | 2001-06-14 | 2004-08-17 | General Semiconductor, Inc. | Symmetric trench MOSFET device and method of making same |
US20060170053A1 (en) * | 2003-05-09 | 2006-08-03 | Yee-Chia Yeo | Accumulation mode multiple gate transistor |
JP3744513B2 (ja) * | 2003-05-30 | 2006-02-15 | トヨタ自動車株式会社 | ダイオード |
KR100616159B1 (ko) * | 2005-06-29 | 2006-08-28 | 주식회사 한국오도텍 | 비닐팩 방향제 및 그 제조방법 |
US9054183B2 (en) * | 2012-07-13 | 2015-06-09 | United Silicon Carbide, Inc. | Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor |
US9696736B2 (en) | 2013-03-15 | 2017-07-04 | Fairchild Semiconductor Corporation | Two-terminal current limiter and apparatus thereof |
US9679890B2 (en) * | 2013-08-09 | 2017-06-13 | Fairchild Semiconductor Corporation | Junction-less insulated gate current limiter device |
US9735147B2 (en) * | 2014-09-15 | 2017-08-15 | Fairchild Semiconductor Corporation | Fast and stable ultra low drop-out (LDO) voltage clamp device |
JP6478316B2 (ja) | 2014-11-10 | 2019-03-06 | ローム株式会社 | トレンチゲート構造を備えた半導体装置およびその製造方法 |
DE102014119395B4 (de) * | 2014-12-22 | 2022-10-06 | Infineon Technologies Ag | Transistorbauelement mit Feldelektrode |
US10510836B1 (en) * | 2018-08-08 | 2019-12-17 | Infineon Technologies Austria Ag | Gate trench device with oxygen inserted si-layers |
JP7224823B2 (ja) * | 2018-09-19 | 2023-02-20 | キヤノン株式会社 | 光検出装置 |
JP7063218B2 (ja) * | 2018-09-27 | 2022-05-09 | 株式会社デンソー | 炭化珪素半導体装置 |
US11728422B2 (en) * | 2019-11-14 | 2023-08-15 | Stmicroelectronics S.R.L. | Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof |
IT202000015076A1 (it) | 2020-06-23 | 2021-12-23 | St Microelectronics Srl | Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2859351B2 (ja) * | 1990-02-07 | 1999-02-17 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2837033B2 (ja) * | 1992-07-21 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2561413B2 (ja) * | 1993-02-23 | 1996-12-11 | 日産自動車株式会社 | 半導体装置 |
JPH07202182A (ja) * | 1993-12-28 | 1995-08-04 | Nissan Motor Co Ltd | 半導体装置 |
JP3481287B2 (ja) * | 1994-02-24 | 2003-12-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
US5998834A (en) * | 1996-05-22 | 1999-12-07 | Siliconix Incorporated | Long channel trench-gated power MOSFET having fully depleted body region |
-
1996
- 1996-05-22 US US08/651,232 patent/US5998834A/en not_active Expired - Lifetime
-
1997
- 1997-05-21 DE DE69739058T patent/DE69739058D1/de not_active Expired - Lifetime
- 1997-05-21 JP JP54252197A patent/JP4286321B2/ja not_active Expired - Fee Related
- 1997-05-21 EP EP97926508A patent/EP0902980B1/en not_active Expired - Lifetime
- 1997-05-21 KR KR10-1998-0709589A patent/KR100381845B1/ko not_active IP Right Cessation
- 1997-05-21 AU AU31257/97A patent/AU3125797A/en not_active Abandoned
- 1997-05-21 WO PCT/US1997/008187 patent/WO1997044828A1/en active IP Right Grant
-
2008
- 2008-11-12 JP JP2008289444A patent/JP4981013B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20000016027A (ko) | 2000-03-25 |
US5998834A (en) | 1999-12-07 |
WO1997044828A1 (en) | 1997-11-27 |
EP0902980A1 (en) | 1999-03-24 |
JP2009060136A (ja) | 2009-03-19 |
JP2000511353A (ja) | 2000-08-29 |
JP4286321B2 (ja) | 2009-06-24 |
EP0902980A4 (en) | 1999-06-16 |
AU3125797A (en) | 1997-12-09 |
KR100381845B1 (ko) | 2003-07-16 |
EP0902980B1 (en) | 2008-10-22 |
DE69739058D1 (de) | 2008-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4981013B2 (ja) | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet | |
US10157983B2 (en) | Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islands | |
US6444527B1 (en) | Method of operation of punch-through field effect transistor | |
JP5001895B2 (ja) | デルタ層を有する低オン抵抗のトレンチ型mosfet | |
KR100628938B1 (ko) | 개선된 고주파 스위칭 특성 및 항복 특성을 갖는 전력용반도체 장치들 | |
US6008520A (en) | Trench MOSFET with heavily doped delta layer to provide low on- resistance | |
US6285060B1 (en) | Barrier accumulation-mode MOSFET | |
US8053858B2 (en) | Integrated latch-up free insulated gate bipolar transistor | |
US7368777B2 (en) | Accumulation device with charge balance structure and method of forming the same | |
US7605426B2 (en) | Power semiconductor device | |
JPH09102607A (ja) | トレンチゲートパワーmosfet | |
KR100317458B1 (ko) | 선형 전류-전압특성을 가진 반도체 소자 | |
SE513284C3 (sv) | Halvledarkomponent med linjär ström-till-spänningskarakteristik | |
US12034001B2 (en) | Concept for silicon carbide power devices | |
KR19990037016A (ko) | 트렌치-게이트 제어된 파워 mosfet | |
US20220199766A1 (en) | SiC Devices with Shielding Structure | |
JP2023530711A (ja) | ハイブリッド・ゲート構造を有するパワー・デバイス | |
US20050280077A1 (en) | Triple-diffused trench MOSFET | |
US11367775B1 (en) | Shielding structure for SiC devices | |
TW201803125A (zh) | 垂直碳化矽金屬氧化物半導體場效電晶體 | |
US20230163167A1 (en) | Semiconductor device including a trench gate structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090415 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111220 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120315 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120403 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120419 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150427 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |