JP4961701B2 - プラズマディスプレイパネルの製造方法 - Google Patents
プラズマディスプレイパネルの製造方法 Download PDFInfo
- Publication number
- JP4961701B2 JP4961701B2 JP2005266557A JP2005266557A JP4961701B2 JP 4961701 B2 JP4961701 B2 JP 4961701B2 JP 2005266557 A JP2005266557 A JP 2005266557A JP 2005266557 A JP2005266557 A JP 2005266557A JP 4961701 B2 JP4961701 B2 JP 4961701B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- chamber
- cryotrap
- film forming
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/12—AC-PDPs with at least one main electrode being out of contact with the plasma with main electrodes provided on both sides of the discharge space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/40—Layers for protecting or enhancing the electron emission, e.g. MgO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Physical Vapour Deposition (AREA)
Description
本発明の保護膜の製造方法および保護膜の製造装置によって製造した保護膜は、PDPの誘電体層を保護する保護膜として有用である。そこで、まずこの保護膜が適用されるPDPについて説明する。
12 表示電極対
12a 走査電極
12b 維持電極
13 誘電体ガラス層
14 保護膜
16 背面ガラス基板
17 アドレス電極
18 下地誘電体層
19 隔壁
20 蛍光体層
21 放電空間
30 基板搬入室
31 基板予備加熱室
32 成膜室
33 基板冷却室
34 基板取出室
40 蒸着材料
41 蒸着ハース
42 電子銃
43 排気ポンプ
44 電子ビーム
45 照射ポイント
46 シャッター
47 ガス導入口
48 トレイ
49 ガス分析装置
51 クライオトラップ
52 ターボ分子ポンプ
53 冷凍機
54 熱電対
100 前面パネル
200 背面パネル
Claims (2)
- 基板上に保護膜を形成するプラズマディスプレイパネルの製造方法であって、
成膜室内で保護膜を成膜する際に、前記成膜室をクライオトラップを備えた排気手段によって排気し、前記成膜室の全圧を一定にするとともに、
前記成膜室内の酸素の分圧および水素の分圧を測定し、前記測定結果から、前記クライオトラップの温度を制御する、プラズマディスプレイパネルの製造方法。 - 前記クライオトラップの冷却温度を170Kから210Kの範囲で制御することを特徴とする請求項1に記載のプラズマディスプレイパネルの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005266557A JP4961701B2 (ja) | 2005-09-14 | 2005-09-14 | プラズマディスプレイパネルの製造方法 |
KR1020077009058A KR100868605B1 (ko) | 2005-09-14 | 2006-09-11 | 보호막의 제조 방법 및 그 제조 장치 |
US11/666,602 US7842342B2 (en) | 2005-09-14 | 2006-09-11 | Method for manufacturing protective layer |
PCT/JP2006/317966 WO2007032303A1 (ja) | 2005-09-14 | 2006-09-11 | 保護膜の製造方法およびその製造装置 |
CN2006800015015A CN101090992B (zh) | 2005-09-14 | 2006-09-11 | 保护膜制造方法及其制造装置 |
EP06783254A EP1925690A4 (en) | 2005-09-14 | 2006-09-11 | METHOD AND APPARATUS FOR PRODUCING PROTECTIVE FILM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005266557A JP4961701B2 (ja) | 2005-09-14 | 2005-09-14 | プラズマディスプレイパネルの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007077446A JP2007077446A (ja) | 2007-03-29 |
JP4961701B2 true JP4961701B2 (ja) | 2012-06-27 |
Family
ID=37864896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005266557A Expired - Fee Related JP4961701B2 (ja) | 2005-09-14 | 2005-09-14 | プラズマディスプレイパネルの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7842342B2 (ja) |
EP (1) | EP1925690A4 (ja) |
JP (1) | JP4961701B2 (ja) |
KR (1) | KR100868605B1 (ja) |
CN (1) | CN101090992B (ja) |
WO (1) | WO2007032303A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201022468A (en) * | 2008-10-01 | 2010-06-16 | Tera Semicon Corp | Apparatus for supplying source gas |
KR101841980B1 (ko) * | 2012-10-18 | 2018-03-26 | 가부시키가이샤 알박 | 성막 장치 |
CN103469159B (zh) * | 2013-08-26 | 2015-07-08 | 广东太阳之约健康科技有限公司 | 远红外线能量发热板专用生产设备 |
DE102017106431A1 (de) * | 2017-03-24 | 2018-09-27 | Aixtron Se | Vorrichtung und Verfahren zum Herabsetzen des Wasserpartialdrucks in einer OVPD-Beschichtungseinrichtung |
CN111293192A (zh) * | 2020-02-25 | 2020-06-16 | 东方日升(常州)新能源有限公司 | 制备太阳能电池tco膜时控制真空腔体水蒸气的方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04326943A (ja) * | 1991-04-25 | 1992-11-16 | Hitachi Ltd | 真空排気システム及び排気方法 |
JP3419414B2 (ja) * | 1993-04-23 | 2003-06-23 | アネルバ株式会社 | スパッタリング装置の排気機構 |
US5685963A (en) * | 1994-10-31 | 1997-11-11 | Saes Pure Gas, Inc. | In situ getter pump system and method |
JP4197204B2 (ja) * | 1998-10-23 | 2008-12-17 | キヤノンアネルバ株式会社 | 酸化マグネシウムの作製装置 |
JP2000329324A (ja) * | 1999-05-14 | 2000-11-30 | Babcock Hitachi Kk | ごみ焼却炉伝熱管の腐食防止方法及び装置 |
JP2001026868A (ja) * | 1999-07-16 | 2001-01-30 | Teijin Ltd | 透明導電積層体の製造方法 |
CN1220239C (zh) * | 1999-11-11 | 2005-09-21 | 松下电器产业株式会社 | 气体放电板的制造方法 |
JP2002260535A (ja) * | 2001-03-01 | 2002-09-13 | Hitachi Ltd | プラズマディスプレイパネル |
JP4669634B2 (ja) * | 2001-07-02 | 2011-04-13 | 余合住金産業株式会社 | 昇降扉ユニット |
JP2003313661A (ja) * | 2002-04-23 | 2003-11-06 | Toppan Printing Co Ltd | スパッタリング装置 |
WO2004001804A2 (en) * | 2002-06-19 | 2003-12-31 | Ziegler Byron J | Device for generation of reactive ions |
WO2004095496A1 (ja) * | 2003-04-22 | 2004-11-04 | Matsushita Electric Industrial Co., Ltd. | プラズマディスプレイパネルおよびその製造方法 |
JP2005050804A (ja) | 2003-07-15 | 2005-02-24 | Matsushita Electric Ind Co Ltd | プラズマディスプレイパネルの製造方法およびその製造装置 |
JP4541832B2 (ja) * | 2004-03-19 | 2010-09-08 | パナソニック株式会社 | プラズマディスプレイパネル |
JP2006066273A (ja) * | 2004-08-27 | 2006-03-09 | Canon Inc | 画像表示装置 |
JP5040217B2 (ja) * | 2005-09-13 | 2012-10-03 | パナソニック株式会社 | 保護膜形成方法および保護膜形成装置 |
WO2007139051A1 (ja) * | 2006-05-30 | 2007-12-06 | Ulvac, Inc. | パネルの製造方法 |
KR100846713B1 (ko) * | 2007-03-21 | 2008-07-16 | 삼성에스디아이 주식회사 | 플라즈마 디스플레이 장치, 및 이의 제조 방법 |
JP2008266682A (ja) * | 2007-04-17 | 2008-11-06 | Air Water Inc | 酸化マグネシウム膜の成膜方法 |
-
2005
- 2005-09-14 JP JP2005266557A patent/JP4961701B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-11 US US11/666,602 patent/US7842342B2/en not_active Expired - Fee Related
- 2006-09-11 CN CN2006800015015A patent/CN101090992B/zh not_active Expired - Fee Related
- 2006-09-11 WO PCT/JP2006/317966 patent/WO2007032303A1/ja active Application Filing
- 2006-09-11 EP EP06783254A patent/EP1925690A4/en not_active Withdrawn
- 2006-09-11 KR KR1020077009058A patent/KR100868605B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US7842342B2 (en) | 2010-11-30 |
EP1925690A1 (en) | 2008-05-28 |
JP2007077446A (ja) | 2007-03-29 |
CN101090992A (zh) | 2007-12-19 |
WO2007032303A1 (ja) | 2007-03-22 |
KR100868605B1 (ko) | 2008-11-13 |
KR20070060123A (ko) | 2007-06-12 |
EP1925690A4 (en) | 2010-12-15 |
US20070298162A1 (en) | 2007-12-27 |
CN101090992B (zh) | 2010-12-01 |
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