JP4961314B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP4961314B2 JP4961314B2 JP2007252967A JP2007252967A JP4961314B2 JP 4961314 B2 JP4961314 B2 JP 4961314B2 JP 2007252967 A JP2007252967 A JP 2007252967A JP 2007252967 A JP2007252967 A JP 2007252967A JP 4961314 B2 JP4961314 B2 JP 4961314B2
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- H01L2224/401—Disposition
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- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/732—Location after the connecting process
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Description
2 第二のパワー半導体素子(パワーMOSFET)
3 第一の電極(デート電極)
4 アルミワイヤ
5 配線
5a 第一の電極(デート電極)3が実装される配線
5b 第二の電極(ソース電極)13が実装される配線
6 電気絶縁性と高熱伝導性を具備する高分子材料が積層された導体平板
7 はんだ
8 外部入出力端子
9 絶縁層
10 封止樹脂
11 締結用ボルト穴
12 配線基板
13 第二の電極(ソース電極)
14 第三の電極(ドレイン電極)
15 高チクソ性高分子材料
16 はんだレジスト
17 放熱フィン
18 金属ベース
19 第三のパワー半導体素子(パワーMOSFET)
20 第四のパワー半導体素子(パワーMOSFET)
21 第五のパワー半導体素子(パワーMOSFET)
22 第六のパワー半導体素子(パワーMOSFET)
23 第一の電極(デート電極)に接続された信号端子
24 第一のパワー半導体素子(パワーMOSFET)と第二のパワー半導体素子(パワーMOSFET)を接続する導体平板6から伸びる出力端子
25 第三のパワー半導体素子(パワーMOSFET)と第四のパワー半導体素子(パワーMOSFET)を接続する導体平板6から伸びる出力端子
26 第五のパワー半導体素子(パワーMOSFET)と第六のパワー半導体素子(パワーMOSFET)を接続する導体平板6から伸びる出力端子
27 U相シャント抵抗
28 V相シャント抵抗
29 W相シャント抵抗
30 モータ
31 電気絶縁性と高熱伝導性を有する高分子材料
32 リード
32a リード32の位置合わせ用端子
32b リード32の外部入出力部
32c リード32のパワー半導体素子(パワーMOSFET)を接続する部分から伸びた端子
Claims (12)
- 一つの面に第一の電極と第二の電極が設けられたパワー半導体素子が配線基板に実装されたパワー半導体装置において、
前記配線基板の、前記パワー半導体素子の第一の電極が実装される配線と、前記パワー半導体素子の第二の電極が実装される配線との間に、電気絶縁性で且つチクソ性1.2以上,粘度400Pa・s以下の高分子材料が設けられ、
前記高分子材料の厚さが前記配線の厚さよりも厚いことを特徴とするパワー半導体装置。 - 請求項1に記載のパワー半導体装置において、
前記高分子材料の高さが、前記パワー半導体素子と前記配線とを接続するはんだの厚さの半分以上、はんだ厚さ以下であることを特徴とするパワー半導体装置。 - 請求項1に記載のパワー半導体装置において、
前記配線基板が金属板に搭載され、少なくとも前記配線基板、前記パワー半導体素子が樹脂により封止されていることを特徴とするパワー半導体装置。 - 請求項3に記載のパワー半導体装置において、
前記配線基板上に複数のパワー半導体素子が搭載され、
前記複数のパワー半導体素子の電極間が導体平板により接続され、
前記金属板と導体平板が露出するように樹脂封止されていることを特徴とするパワー半導体装置。 - 請求項4に記載のパワー半導体装置において、
はんだにより、前記配線と前記複数のパワー半導体素子、及び、前記パワー半導体素子と前記導体平板が接続されていることを特徴とするパワー半導体装置。 - 請求項4に記載のパワー半導体装置において、
前記導体平板のパワー半導体素子が実装された面と反対の面に、熱伝導率0.5W/mK以上であり電気絶縁性を有する高分子材料が設けられていることを特徴とするパワー半導体装置。 - 請求項6に記載のパワー半導体装置において、
前記導体平板に設けられた高分子材料は、厚さ0.1mm以上10mm以下で、縦弾性係数0.5MPa以上1.0GPa以下であることを特徴とするパワー半導体装置。 - 請求項4に記載のパワー半導体装置において、
前記導体平板が、銅,銅合金,アルミニウム,アルミニウム合金,炭素繊維複合体のいずれか、または2種類以上の積層板であることを特徴とするパワー半導体装置。 - 請求項6に記載のパワー半導体装置において、
前記導体平板に設けられた高分子材料上に放熱板が搭載されていることを特徴とするパワー半導体装置。 - 絶縁基板の一方の面に配線が形成され、他方の面に金属板を有する配線基板と、
一方の面にゲート電極とソース電極、他方の面にドレイン電極を有し、前記ドレイン電極がはんだにより前記配線と接続された第1のパワー半導体素子と、
一方の面にゲート電極とソース電極、他方の面にドレイン電極を有し、前記ゲート電極とソース電極がはんだにより前記配線と接続された第2のパワー半導体素子と、
前記第1のパワー半導体素子のソース電極と、前記第2のパワー半導体素子のドレイン電極とを電気的に接続するための導体平板と、
前記配線基板と電気的に接続された外部接続用端子と、
前記配線基板、第1,第2のパワー半導体素子,導体平板、及び、外部接続用端子を封止する封止樹脂とを備え、
前記配線基板の、前記第2のパワー半導体素子のゲート電極と接続された配線と、前記第2のパワー半導体素子のソース電極と接続された配線との間に、電気絶縁性で且つチクソ性1.2以上,粘度400Pa・s以下の高分子材料が設けられ、前記高分子材料の厚さが前記配線の厚さよりも厚く、
前記金属板と前記導体平板の表面が、前記封止樹脂の表面に露出していることを特徴とするパワー半導体装置。 - 請求項10に記載のパワー半導体装置において、
前記導体平板のパワー半導体素子と接続された面と反対の面に、熱伝導率0.5W/mK以上であり電気絶縁性を有する高分子材料が設けられていることを特徴とするパワー半導体装置。 - 請求項10に記載のパワー半導体装置において、
前記導体平板の前記第1のパワー半導体素子のゲート電極と隣接する箇所に切り欠け部が設けられていることを特徴とするパワー半導体装置。
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JP2007252967A JP4961314B2 (ja) | 2007-09-28 | 2007-09-28 | パワー半導体装置 |
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JP2007252967A JP4961314B2 (ja) | 2007-09-28 | 2007-09-28 | パワー半導体装置 |
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JP4961314B2 true JP4961314B2 (ja) | 2012-06-27 |
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Families Citing this family (2)
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JP5655339B2 (ja) * | 2010-03-26 | 2015-01-21 | サンケン電気株式会社 | 半導体装置 |
CN113161309B (zh) * | 2020-01-22 | 2024-06-04 | 台达电子企业管理(上海)有限公司 | 载板及其适用的功率模块 |
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JPH08162580A (ja) * | 1994-11-30 | 1996-06-21 | Rohm Co Ltd | 半導体装置 |
JP3379349B2 (ja) * | 1996-09-05 | 2003-02-24 | 株式会社日立製作所 | モールド型電子部品及びその製法 |
JP4078993B2 (ja) * | 2003-01-27 | 2008-04-23 | 三菱電機株式会社 | 半導体装置 |
JP4385324B2 (ja) * | 2004-06-24 | 2009-12-16 | 富士電機システムズ株式会社 | 半導体モジュールおよびその製造方法 |
JP4283741B2 (ja) * | 2004-07-26 | 2009-06-24 | 株式会社日立製作所 | 樹脂モールド型モジュールとその製造方法 |
JP2006196765A (ja) * | 2005-01-14 | 2006-07-27 | Mitsubishi Electric Corp | 半導体装置 |
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