JP4959235B2 - 非軸上プロジェクション光学系及びこれを適用した極紫外線リソグラフィ装置 - Google Patents
非軸上プロジェクション光学系及びこれを適用した極紫外線リソグラフィ装置 Download PDFInfo
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- JP4959235B2 JP4959235B2 JP2006167640A JP2006167640A JP4959235B2 JP 4959235 B2 JP4959235 B2 JP 4959235B2 JP 2006167640 A JP2006167640 A JP 2006167640A JP 2006167640 A JP2006167640 A JP 2006167640A JP 4959235 B2 JP4959235 B2 JP 4959235B2
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- mirror
- optical system
- projection optical
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- 230000003287 optical effect Effects 0.000 title claims description 51
- 238000001900 extreme ultraviolet lithography Methods 0.000 title description 13
- 230000004075 alteration Effects 0.000 description 10
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Description
8 支持部。
Claims (11)
- 非軸上配置関係にある第1ミラー及び第2ミラーを備え、
前記第1ミラーのタンジェンシャル曲率半径及びサジタル曲率半径をそれぞれR1t、R1s、前記第2ミラーのタンジェンシャル曲率半径及びサジタル曲率半径をそれぞれR2t、R2s、物体点からの光線が前記第1ミラーに入射される角度をi1、第1ミラーから反射された光線が前記第2ミラーに入射される角度をi2とした場合、下記の式を満足することを特徴とする非軸上プロジェクション光学系。
- 前記第1ミラーは凸ミラー、前記第2ミラーは凹ミラーであることを特徴とする請求項1に記載の非軸上プロジェクション光学系。
- 前記第1ミラー及び前記第2ミラーは、非球面ミラーであることを特徴とする請求項2に記載の非軸上プロジェクション光学系。
- 前記第1ミラー及び前記第2ミラーは、非球面ミラーであることを特徴とする請求項1に記載の非軸上プロジェクション光学系。
- 前記第1ミラー及び前記第2ミラーは、両側対称形態であることを特徴とする請求項1〜4のうちいずれか1項に記載の非軸上プロジェクション光学系。
- マスクのパターン情報を持つビームをプロジェクション光学系によりウェーハに照射するリソグラフィ装置において、
前記プロジェクション光学系は、請求項1〜4のうちいずれか1項に記載の非軸上プロジェクション光学系を含むことを特徴とするリソグラフィ装置。 - 前記第1ミラー及び前記第2ミラーは、両側対称形態であることを特徴とする請求項6に記載のリソグラフィ装置。
- 前記ビームは、極紫外線ビームであることを特徴とする請求項6に記載のリソグラフィ装置。
- 前記マスクは反射型マスクであることを特徴とする請求項8に記載のリソグラフィ装置。
- 前記光線の波長をλとした時、前記ウェーハ上に形成されたパターンの波面エラーは、0.1λ以下であることを特徴とする請求項7〜9のいずれか一項に記載のリソグラフィ装置。
- 前記第1ミラー及び前記第2ミラーに加えて、少なくとも1つのミラーを追加的に備えることを特徴とする請求項7〜10のいずれか一項に記載のリソグラフィ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050052727A KR100604942B1 (ko) | 2005-06-18 | 2005-06-18 | 비축상(off-axis) 프로젝션 광학계 및 이를 적용한극자외선 리소그래피 장치 |
KR10-2005-0052727 | 2005-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006352140A JP2006352140A (ja) | 2006-12-28 |
JP4959235B2 true JP4959235B2 (ja) | 2012-06-20 |
Family
ID=37184548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006167640A Active JP4959235B2 (ja) | 2005-06-18 | 2006-06-16 | 非軸上プロジェクション光学系及びこれを適用した極紫外線リソグラフィ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7301694B2 (ja) |
JP (1) | JP4959235B2 (ja) |
KR (1) | KR100604942B1 (ja) |
CN (1) | CN100573336C (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100962911B1 (ko) * | 2005-09-13 | 2010-06-10 | 칼 짜이스 에스엠테 아게 | 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법 |
DE102006014380A1 (de) * | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
CN101416117B (zh) * | 2006-04-07 | 2014-11-05 | 卡尔蔡司Smt有限责任公司 | 微光刻投影光学***、工具及其制造方法 |
EP1950594A1 (de) | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
DE102008005006A1 (de) | 2007-01-17 | 2008-07-24 | Carl Zeiss Smt Ag | Projektionsoptik für die Mikrolithographie, Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage sowie durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement |
US7929114B2 (en) * | 2007-01-17 | 2011-04-19 | Carl Zeiss Smt Gmbh | Projection optics for microlithography |
DE102008033340B3 (de) * | 2008-07-16 | 2010-04-08 | Carl Zeiss Smt Ag | Abbildende Optik |
DE102009030501A1 (de) * | 2009-06-24 | 2011-01-05 | Carl Zeiss Smt Ag | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes |
DE102010043498A1 (de) | 2010-11-05 | 2012-05-10 | Carl Zeiss Smt Gmbh | Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives |
CN102590996A (zh) * | 2012-03-23 | 2012-07-18 | 北京理工大学 | 宽谱段大视场离轴三反射镜变焦距光学*** |
CN107219611A (zh) * | 2017-07-28 | 2017-09-29 | 长春国科精密光学技术有限公司 | 一种日盲紫外成像光学镜头和*** |
US11042097B1 (en) * | 2019-12-31 | 2021-06-22 | Soulnano Limited | Multi-mirror UV-LED optical lithography system |
DE102022211866A1 (de) * | 2022-11-09 | 2024-05-16 | Carl Zeiss Smt Gmbh | Spiegelelement, Lithographiesystem und Verfahren zur Bereitstellung eines Spiegelelements |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0789537B2 (ja) * | 1986-09-02 | 1995-09-27 | 日本電信電話株式会社 | X線縮小投影露光装置 |
JP2689341B2 (ja) * | 1988-12-26 | 1997-12-10 | 日本電信電話株式会社 | X線投影露光装置 |
US5805365A (en) * | 1995-10-12 | 1998-09-08 | Sandia Corporation | Ringfield lithographic camera |
AU2002316719A1 (en) * | 2002-07-17 | 2004-02-09 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Catadioptric multi-mirror systems for protection lithography |
JP4387902B2 (ja) * | 2004-09-09 | 2009-12-24 | キヤノン株式会社 | 反射型投影光学系、当該投影光学系を有する露光装置、並びに、デバイス製造方法 |
-
2005
- 2005-06-18 KR KR1020050052727A patent/KR100604942B1/ko active IP Right Grant
-
2006
- 2006-06-16 JP JP2006167640A patent/JP4959235B2/ja active Active
- 2006-06-16 US US11/453,775 patent/US7301694B2/en active Active
- 2006-06-19 CN CNB2006101060804A patent/CN100573336C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US7301694B2 (en) | 2007-11-27 |
KR100604942B1 (ko) | 2006-07-31 |
CN1881091A (zh) | 2006-12-20 |
US20060284113A1 (en) | 2006-12-21 |
JP2006352140A (ja) | 2006-12-28 |
CN100573336C (zh) | 2009-12-23 |
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