JP4956776B2 - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 184
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 125000005842 heteroatom Chemical group 0.000 claims description 127
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 63
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 230000000694 effects Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 13
- 230000005669 field effect Effects 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009313 farming Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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Description
本発明の第一の実施の形態例について、図1で説明する。図1は、本発明に係る半導体装置である電界効果トランジスタのデバイス断面構造を示すものである。図は、単位セルを2つ対向して並べた断面に相当する。実際には、これらのセルが複数、並列に接続されて素子を形成するが、この断面構造を代表として説明する。
図2は、本発明における第二の実施の形態例である電界効果トランジスタのデバイス断面構造を示す。この断面構造は、図1で示した構造と同様に、単位セルを2つ対向して並べた断面構造に相当する。基本的な構成は図1で説明したものと同様であるので、異なる部分のみを説明する。
図3、図4に、本発明における第三の実施の形態例である電界効果トランジスタのデバイス断面構造を示す。この場合の断面は、ソース電極8とドレイン電極9との間に流れる電流に平行でゲート電極6と交わる平面による断面であり、図3、図4に示した断面は互いに平行であるとする。また、図10には、図3、図4のそれぞれに示した断面構造が現れる位置を示す平面レイアウト図を示す。
図5に、本発明における第四の実施の形態例である電界効果トランジスタのデバイス断面構造を示す。この場合の断面は、ソース電極8とドレイン電極9との間に流れる電流に平行でゲート電極6と交わる平面による断面である。この断面構造は、図1で示した断面構造と同様に、単位セルを2つ対向して並べた断面構造に相当する。基本的な構成は図1で説明したものと同様であるので、異なる部分のみを説明する。
Claims (9)
- 第一導電型の半導体基体と、前記半導体基体に接して前記半導体基体とはバンドギャップが異なったヘテロ半導体領域と、前記ヘテロ半導体領域と前記半導体基体との接合部の一部にゲート絶縁膜を介して接するゲート電極と、前記ヘテロ半導体領域と接続されたソース電極と、前記半導体基体と接続されたドレイン電極とを有する半導体装置を製造する半導体装置の製造方法において、
前記ヘテロ半導体領域を第一及び第二のヘテロ半導体領域から構成し、該第一のヘテロ半導体領域を、前記ゲート絶縁膜を形成する前に形成し、該第二のヘテロ半導体領域を、前記ゲート絶縁膜を形成した後に形成することを特徴とする半導体装置の製造方法。 - 請求項1に記載の半導体装置の製造方法において、
前記第二のヘテロ半導体領域を、前記ゲート絶縁膜を熱処理した後に形成することを特徴とする半導体装置の製造方法。 - 請求項1または2に記載の半導体装置の製造方法において、
前記第一のヘテロ半導体領域を、前記第二のヘテロ半導体領域を形成する前に熱処理することを特徴とする半導体装置の製造方法。 - 請求項1乃至3の何れかに記載の半導体装置の製造方法において、
前記第一のヘテロ半導体領域と前記第二のヘテロ半導体領域とが、前記ソース電極から前記ドレイン電極に至る方向に重なる部分を有するように前記第二のヘテロ半導体領域を形成し、前記第一のヘテロ半導体領域が前記ソース電極と直接接する部分を有するように前記ソース電極を形成することを特徴とする半導体装置の製造方法。 - 請求項1乃至3の何れかに記載の半導体装置の製造方法において、
前記第一のヘテロ半導体領域をパターニングする際に、前記ゲート電極を形成するための領域と、前記第二のヘテロ半導体領域と前記半導体基体とが接するための領域とを同一のエッチング工程で形成することを特徴とする半導体装置の製造方法。 - 請求項4に記載の半導体装置の製造方法において、
前記第一のヘテロ半導体領域が前記半導体基体に接する位置よりも前記ドレイン電極に近い位置に至る溝部を前記半導体基体に形成し、該溝部において、前記第二のヘテロ半導体領域が前記半導体基体に接するように前記第二のヘテロ半導体領域を形成することを特徴とする半導体装置の製造方法。 - 請求項5に記載の半導体装置の製造方法において、
前記第一のヘテロ半導体領域をパターニングする工程中あるいは該工程に続けて、前記第二のヘテロ半導体領域と前記半導体基体とが接するための領域及び前記ゲート電極を形成するための領域に、前記第一のヘテロ半導体領域が前記半導体基体に接する位置よりも前記ドレイン電極に近い位置に至る溝部を前記半導体基体に、エッチングによって、形成することを特徴とする半導体装置の製造方法。 - 請求項1乃至3の何れかに記載の半導体装置の製造方法において、
前記ソース電極と前記ドレイン電極との間に流れる電流に平行で前記ゲート電極と交わる平面による断面における前記第一のヘテロ半導体領域の断面形状が下底よりも長い上底を持つ逆台形であり、該下底が前記半導体基体と接するように前記第一のヘテロ半導体領域を形成し、前記ソース電極が該上底に接するように前記ソース電極を形成することを特徴とする半導体装置の製造方法。 - 請求項1乃至8の何れかに記載の半導体装置の製造方法において、
前記半導体基体が炭化珪素、窒化ガリウム、ダイヤモンドのいずれかからなり、前記ヘテロ半導体領域が単結晶シリコン、多結晶シリコン、アモルファスシリコン、ゲルマニウム、ヒ化ガリウムのいずれかからなることを特徴とする半導体装置の製造方法。
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JP2005260696A JP4956776B2 (ja) | 2005-09-08 | 2005-09-08 | 半導体装置の製造方法 |
KR1020087001244A KR100964771B1 (ko) | 2005-09-08 | 2006-08-02 | 반도체 장치 및 그 제조 방법 |
CN2006800280082A CN101233618B (zh) | 2005-09-08 | 2006-08-02 | 半导体装置及其制造方法 |
EP06768429.0A EP1929534B1 (en) | 2005-09-08 | 2006-08-02 | Semiconductor device and method of manufacturing the same |
US12/066,145 US7768035B2 (en) | 2005-09-08 | 2006-08-02 | Semiconductor device and method of manufacturing the same |
PCT/JP2006/315690 WO2007029444A2 (en) | 2005-09-08 | 2006-08-02 | Semiconductor device and method of manufacturing the same |
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JP4956776B2 true JP4956776B2 (ja) | 2012-06-20 |
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JP5352999B2 (ja) * | 2007-06-08 | 2013-11-27 | 日産自動車株式会社 | 半導体装置の製造方法 |
CN101853882B (zh) | 2009-04-01 | 2016-03-23 | 台湾积体电路制造股份有限公司 | 具有改进的开关电流比的高迁移率多面栅晶体管 |
US9768305B2 (en) | 2009-05-29 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gradient ternary or quaternary multiple-gate transistor |
US8617976B2 (en) * | 2009-06-01 | 2013-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain re-growth for manufacturing III-V based transistors |
DE102011053641A1 (de) * | 2011-09-15 | 2013-03-21 | Infineon Technologies Ag | SiC-MOSFET mit hoher Kanalbeweglichkeit |
JP6285668B2 (ja) * | 2013-09-03 | 2018-02-28 | 株式会社東芝 | 半導体装置及びその製造方法 |
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JP3016298B2 (ja) * | 1992-02-26 | 2000-03-06 | 日本電気株式会社 | 半導体装置 |
JPH08213607A (ja) * | 1995-02-08 | 1996-08-20 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
US7282739B2 (en) * | 2002-04-26 | 2007-10-16 | Nissan Motor Co., Ltd. | Silicon carbide semiconductor device |
JP3620513B2 (ja) | 2002-04-26 | 2005-02-16 | 日産自動車株式会社 | 炭化珪素半導体装置 |
JP3573149B2 (ja) * | 2002-10-16 | 2004-10-06 | 日産自動車株式会社 | 炭化珪素半導体装置 |
JP2005011846A (ja) * | 2003-06-16 | 2005-01-13 | Nissan Motor Co Ltd | 半導体装置 |
US20060025233A1 (en) * | 2004-08-02 | 2006-02-02 | Ming-Chuan Lin | Striking surface of golf club heads |
EP1641030B1 (en) * | 2004-09-28 | 2012-01-11 | Nissan Motor Co., Ltd. | Method of manufacturing a semiconductor device |
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Publication number | Publication date |
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KR20080028430A (ko) | 2008-03-31 |
WO2007029444A3 (en) | 2007-07-05 |
US20090267113A1 (en) | 2009-10-29 |
CN101233618A (zh) | 2008-07-30 |
US7768035B2 (en) | 2010-08-03 |
JP2007073818A (ja) | 2007-03-22 |
CN101233618B (zh) | 2011-11-16 |
EP1929534A2 (en) | 2008-06-11 |
KR100964771B1 (ko) | 2010-06-21 |
WO2007029444A2 (en) | 2007-03-15 |
EP1929534B1 (en) | 2019-11-13 |
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