JP4954213B2 - 光起電活性の半導体材料を含む光電池 - Google Patents
光起電活性の半導体材料を含む光電池 Download PDFInfo
- Publication number
- JP4954213B2 JP4954213B2 JP2008533986A JP2008533986A JP4954213B2 JP 4954213 B2 JP4954213 B2 JP 4954213B2 JP 2008533986 A JP2008533986 A JP 2008533986A JP 2008533986 A JP2008533986 A JP 2008533986A JP 4954213 B2 JP4954213 B2 JP 4954213B2
- Authority
- JP
- Japan
- Prior art keywords
- formula
- layer
- photovoltaic cell
- group
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000011701 zinc Substances 0.000 claims description 36
- 239000011777 magnesium Substances 0.000 claims description 33
- 239000002019 doping agent Substances 0.000 claims description 21
- 229910007709 ZnTe Inorganic materials 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000005350 fused silica glass Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005477 sputtering target Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 230000007717 exclusion Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910005900 GeTe Inorganic materials 0.000 claims description 2
- 229910019018 Mg 2 Si Inorganic materials 0.000 claims description 2
- 229910019021 Mg 2 Sn Inorganic materials 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- 229910005642 SnTe Inorganic materials 0.000 claims description 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 2
- 229910007657 ZnSb Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011572 manganese Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- -1 tellurium anion Chemical class 0.000 description 5
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000011149 active material Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
(I) (Zn1-xMgxTe)1-y(MnTem)y、又は
(II) (ZnTe)1-y(MeaMb)y、
[但し、MnTem及びMeaMbが、それぞれドーパントであり、且つMが、ケイ素、ゲルマニウム、スズ、鉛、アンチモン及びビスマスからなる群から選択される少なくとも1種の元素であり、Meが、マグネシウム及び亜鉛からなる群から選択される少なくとも1種の元素であり、
x=0〜0.5、
y=0.0001〜0.05、
n=1〜2、
m=0.5〜4、
a=1〜5、及び
b=1〜3である。]
で表されるか、又は式(I)と(II)の組み合わせである光起電活性の半導体材料を含む光電池を用いる本発明により達成される。
(I) (Zn1-xMgxTe)1-y(MnTem)y、又は
(II) (ZnTe)1-y(MeaMb)y、
[但し、MnTem及びMeaMbが、それぞれドーパントであり、且つMが、ケイ素、ゲルマニウム、スズ、鉛、アンチモン及びビスマスからなる群から選択される少なくとも1種の元素であり、Meが、マグネシウム及び亜鉛からなる群から選択される少なくとも1種の元素であり、
x=0〜0.5、
y=0.0001〜0.05、
n=1〜2、
m=0.5〜4、
a=1〜5、及び
b=1〜3である。]
で表されるか、又は式(I)と(II)の組み合わせである光起電活性の半導体材料を提供する。
式Zn1-xMgxTe又はZnTeで表される半導体材料による層を製造する工程と、
該層にドーパントのMnTem又はMeaMbを導入する工程と、を含み、且つ
Mが、Si、Ge、Sn、Pb、Sb及びBiからなる群から選択される少なくとも1種の元素であり、Meが、Mg及びZnからなる群から選択される少なくとも1種の元素であり、
x=0〜0.5、
y=0.0001〜0.05、
n=1〜2、
m=0.5〜4、
a=1〜5、及び
b=1〜3である、製造方法を提供する。
a)Zn、Te、M及び適宜、Mgを、真空の溶融石英管において800〜1200℃、好ましくは1000〜1100℃の条件下で1〜100時間、好ましくは5〜50時間反応させて、材料を得て、
b)大気酸素及び水分を実質的に排除して冷却した後に材料を摩砕して、1〜30μm、好ましくは2〜20μmの粒径を有する粉末を得て、そして
c)粉末を、300〜1200℃、好ましくは400〜700℃の温度、5〜500MPa、好ましくは20〜200MPaの圧力及び0.2〜10時間、好ましくは1〜3時間の加圧時間の条件下でホットプレスする、ことによって製造される。
a)Zn、Te、及び適宜、Mgを、真空の溶融石英管において800〜1200℃、好ましくは1000〜1100℃の条件下で1〜100時間、好ましくは5〜50時間反応させて、材料を得て、
b)大気酸素及び水分を実質的に排除しつつ冷却した後に材料を摩砕して、1〜30μm、好ましくは2〜20μmの粒径を有する粉末を得て、そして
c)粉末を、300〜1200℃、好ましくは400〜700℃の温度、5〜500MPa、好ましくは20〜200MPaの圧力及び0.2〜10時間、好ましくは1〜3時間の加圧時間の条件下でホットプレスする、ことによって製造される。
(Zn1-xMgxTe)1-u-v(MnTem)u(MeaMb)v (III)
[但し、u+v=yである。]
によって説明可能である。
Claims (11)
- 以下の式:
(I) (Zn1-xMgxTe)1-y(MnTem)y、又は
(II) (ZnTe)1-y(MeaMb)y、
[但し、MnTem及びMeaMbが、それぞれドーパントであり、且つMが、ケイ素、ゲルマニウム、スズ、鉛、アンチモン及びビスマスからなる群から選択される少なくとも1種の元素であり、Meが、マグネシウム及び亜鉛からなる群から選択される少なくとも1種の元素であり、
x=0〜0.5、
y=0.0001〜0.05、
n=1〜2、
m=0.5〜4、
a=1〜5、及び
b=1〜3である。]
で表されるか、又は式(I)と(II)の組み合わせである光起電活性の半導体材料。 - 以下の式:
(I) (Zn1-xMgxTe)1-y(MnTem)y、又は
(II) (ZnTe)1-y(MeaMb)y、
[但し、MnTem及びMeaMbが、それぞれドーパントであり、且つMが、ケイ素、ゲルマニウム、スズ、鉛、アンチモン及びビスマスからなる群から選択される少なくとも1種の元素であり、Meが、マグネシウム及び亜鉛からなる群から選択される少なくとも1種の元素であり、
x=0〜0.5、
y=0.0001〜0.05、
n=1〜2、
m=0.5〜4、
a=1〜5、及び
b=1〜3である。]
で表されるか、又は式(I)と(II)の組み合わせである光起電活性の半導体材料を含む光電池。 - ドーパントが、Si3Te3、GeTe、SnTe、PbTe、Sb2Te3、Bi2Te3、Mg2Si、Mg2Ge、Mg2Sn、Mg2Pb、Mg3Sb2、Mg3Bi2、ZnSb、Zn3Sb2及びZn4Sb3からなる群から選択される少なくとも1種の化合物である請求項2に記載の光電池。
- 式(I)、式(II)で表されるか、又はこれらの組み合わせである材料による少なくとも1層のp−伝導性吸収層を含む請求項2又は3に記載の光電池。
- 酸化インジウムスズ、フッ素−ドープ処理酸化スズ、アンチモン−ドープ処理酸化亜鉛、ガリウム−ドープ処理酸化亜鉛、インジウム−ドープ処理酸化亜鉛及びアルミニウム−ドープ処理酸化亜鉛からなる群から選択される少なくとも1種の半導体材料を含むn−伝導性透明層を含む請求項2〜4のいずれか1項に記載の光電池。
- 式(I)、式(II)で表されるか、又はこれらの組み合わせである材料による少なくとも1層のp−伝導性吸収層と、少なくとも1層のn−伝導層と、電気伝導性材料が被覆されたガラス枠、可撓性の金属箔又は可撓性の金属シートである基板と、を含む請求項2〜5のいずれか1項に記載の光電池。
- 式Zn1-xMgxTe又はZnTeで表される半導体材料による層を製造する工程と、該層にドーパントのMnTem又はMeaMbを導入する工程と、を含む、請求項1に記載の光起電活性の半導体材料又は請求項2〜6のいずれか1項に記載の光電池の製造方法。
- 0.1〜20μmの厚さを有する半導体材料による層を製造する請求項7に記載の方法。
- 層は、スパッタリング、電気化学析出及び無電解析出からなる群から選択される少なくとも1種の析出法によって製造される請求項7又は8に記載の方法。
- 式Zn1-xMgxTe、ZnTe、(Zn1-xMgxTe)1-y(MnTem)y又は(ZnTe)1-y(MeaMb)yで表されるスパッタリングターゲットが、
a)Zn、Te及び適宜、Mg及びMを、真空の溶融石英管において800〜1200℃の条件下で1〜100時間反応させて、材料を得て、
b)大気酸素及び水分を実質的に排除して冷却した後に材料を摩砕して、1〜30μmの粒径を有する粉末を得て、そして
c)粉末を、300〜1200℃、好ましくは400〜700℃の温度、5〜500MPaの圧力及び0.2〜10時間の加圧時間の条件下でホットプレスする、ことによって製造される請求項7〜9のいずれか1項に記載の方法。 - 工程a)におけるZn、Te及び適宜、Mgの反応によって得られる材料を、工程b)においてドーパントのMnTem又はMeaMbとともに摩砕する請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005047907.3 | 2005-10-06 | ||
DE102005047907A DE102005047907A1 (de) | 2005-10-06 | 2005-10-06 | Photovoltaische Zelle mit einem darin enthaltenen photovoltaisch aktiven Halbleitermaterial |
PCT/EP2006/066895 WO2007039562A2 (de) | 2005-10-06 | 2006-09-29 | Photovoltaische zelle mit einem darin enthaltenen photovoltaisch aktiven halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009512181A JP2009512181A (ja) | 2009-03-19 |
JP4954213B2 true JP4954213B2 (ja) | 2012-06-13 |
Family
ID=37499579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008533986A Expired - Fee Related JP4954213B2 (ja) | 2005-10-06 | 2006-09-29 | 光起電活性の半導体材料を含む光電池 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20080210304A1 (ja) |
EP (1) | EP1935031A2 (ja) |
JP (1) | JP4954213B2 (ja) |
KR (1) | KR101312202B1 (ja) |
CN (1) | CN100576571C (ja) |
AU (1) | AU2006298686A1 (ja) |
DE (1) | DE102005047907A1 (ja) |
TW (1) | TW200733404A (ja) |
WO (1) | WO2007039562A2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012037242A2 (en) * | 2010-09-14 | 2012-03-22 | E. I. Du Pont De Nemours And Company | Glass-coated flexible substrates for photovoltaic cells |
US20120064352A1 (en) * | 2010-09-14 | 2012-03-15 | E. I. Du Pont De Nemours And Company | Articles comprising a glass - flexible stainless steel composite layer |
CN102674696B (zh) * | 2011-03-17 | 2015-08-26 | 比亚迪股份有限公司 | 一种玻璃粉及其制备方法和一种导电银浆及其制备方法 |
US8361651B2 (en) * | 2011-04-29 | 2013-01-29 | Toyota Motor Engineering & Manufacturing North America, Inc. | Active material for rechargeable battery |
JP6546791B2 (ja) * | 2015-06-16 | 2019-07-17 | 地方独立行政法人東京都立産業技術研究センター | 光電変換装置 |
KR101778941B1 (ko) | 2015-10-02 | 2017-09-15 | 한국세라믹기술원 | 전기화학적 리튬화를 이용한 ZnSb 나노시트의 제조방법 |
CN115108831B (zh) * | 2022-06-15 | 2023-10-10 | 先导薄膜材料(广东)有限公司 | 一种碲化锌掺杂靶材及其制备方法与应用 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2428921A1 (fr) * | 1978-06-12 | 1980-01-11 | Commissariat Energie Atomique | Procede de realisation de diodes electroluminescentes et/ou photodetectrices |
JPS5831584A (ja) * | 1981-08-19 | 1983-02-24 | Matsushita Electric Ind Co Ltd | 太陽電池の製造方法 |
US4710589A (en) * | 1986-10-21 | 1987-12-01 | Ametek, Inc. | Heterojunction p-i-n photovoltaic cell |
JP2771414B2 (ja) * | 1992-12-28 | 1998-07-02 | キヤノン株式会社 | 太陽電池の製造方法 |
JPH088461A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | 発光受光素子 |
AU709692B2 (en) * | 1996-06-19 | 1999-09-02 | Matsushita Electric Industrial Co., Ltd. | Optoelectronic material, device using the same, and method for manufacturing optoelectronic material |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
US6506321B1 (en) * | 1997-10-24 | 2003-01-14 | Sumitomo Special Metals Co., Ltd. | Silicon based conductive material and process for production thereof |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
JP2003179243A (ja) * | 2001-08-31 | 2003-06-27 | Basf Ag | 光電池活性材料およびこれを含む電池 |
US7605327B2 (en) * | 2003-05-21 | 2009-10-20 | Nanosolar, Inc. | Photovoltaic devices fabricated from nanostructured template |
CN102738259A (zh) * | 2003-12-01 | 2012-10-17 | 加利福尼亚大学董事会 | 用于光伏器件的多频带半导体组合物 |
-
2005
- 2005-10-06 DE DE102005047907A patent/DE102005047907A1/de not_active Withdrawn
-
2006
- 2006-09-29 JP JP2008533986A patent/JP4954213B2/ja not_active Expired - Fee Related
- 2006-09-29 KR KR1020087010584A patent/KR101312202B1/ko not_active IP Right Cessation
- 2006-09-29 AU AU2006298686A patent/AU2006298686A1/en not_active Abandoned
- 2006-09-29 EP EP06793915A patent/EP1935031A2/de not_active Withdrawn
- 2006-09-29 WO PCT/EP2006/066895 patent/WO2007039562A2/de active Application Filing
- 2006-09-29 CN CN200680036753A patent/CN100576571C/zh not_active Expired - Fee Related
- 2006-09-29 US US12/088,859 patent/US20080210304A1/en not_active Abandoned
- 2006-10-05 TW TW095137038A patent/TW200733404A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20080066756A (ko) | 2008-07-16 |
JP2009512181A (ja) | 2009-03-19 |
DE102005047907A1 (de) | 2007-04-12 |
EP1935031A2 (de) | 2008-06-25 |
WO2007039562A3 (de) | 2008-01-17 |
KR101312202B1 (ko) | 2013-09-27 |
CN101278406A (zh) | 2008-10-01 |
AU2006298686A1 (en) | 2007-04-12 |
TW200733404A (en) | 2007-09-01 |
US20080210304A1 (en) | 2008-09-04 |
CN100576571C (zh) | 2009-12-30 |
WO2007039562A2 (de) | 2007-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20080163928A1 (en) | Photovoltaic Cell Containing a Semiconductor Photovoltaically Active Material | |
JP4885237B2 (ja) | 光起電活性半導体材料 | |
JP4954213B2 (ja) | 光起電活性の半導体材料を含む光電池 | |
US10896991B2 (en) | Photovoltaic devices and method of manufacturing | |
TW201212243A (en) | Method of manufacture of chalcogenide-based photovoltaic cells | |
EP2437316A2 (en) | Photovoltaic device and method for making the same | |
TW201240123A (en) | Method of manufacturing transparent conductive film, and method of manufacturing thin-film solar cell | |
US8636926B2 (en) | Compound semiconductors and their application | |
Lee et al. | Sputtered Cd1− xZnxTe films for top junctions in tandem solar cells | |
Park et al. | Yb-doped zinc tin oxide thin film and its application to Cu (InGa) Se2 solar cells | |
JP5348394B2 (ja) | 太陽電池用の(Zn,Al)O系透明電極層およびその形成に用いられるZnO−Al2O3系スパッタリングターゲット | |
JP6359525B2 (ja) | 太陽光発電モジュール | |
WO2012035833A1 (ja) | 半導体膜及び太陽電池 | |
AU2005298837B2 (en) | Photovoltaic cell comprising a photovoltaically active semiconductor material | |
EP2921467B1 (en) | Oxide sinter, sputtering target using same, and oxide film | |
EP2437289A2 (en) | Photovoltaic device and method for making | |
Hien et al. | Investigation of the stability of organic-inorganic halide perovskite thin films: Insight from experimental and simulation | |
Gezgin et al. | The Investigation of Photovoltaic and Electrical Properties of Bi Doped CTS/Si Hetero-Junction Structure for the Solar Cell Application | |
US20090133744A1 (en) | Photovoltaic cell | |
Chinnaiyah et al. | Characterization of Thermally Evaporated Cu2. 2Zn1Sn0. 8S4. Thin Film for Solar Cell Applications |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110208 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120313 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150323 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |