JP4954151B2 - Connection structure between high-frequency circuit and waveguide section - Google Patents

Connection structure between high-frequency circuit and waveguide section Download PDF

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JP4954151B2
JP4954151B2 JP2008167406A JP2008167406A JP4954151B2 JP 4954151 B2 JP4954151 B2 JP 4954151B2 JP 2008167406 A JP2008167406 A JP 2008167406A JP 2008167406 A JP2008167406 A JP 2008167406A JP 4954151 B2 JP4954151 B2 JP 4954151B2
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waveguide
frequency signal
connection structure
slot
frequency circuit
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JP2010011029A (en
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健太郎 宮里
弘志 内村
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4905—Shape
    • H01L2224/4909—Loop shape arrangement
    • H01L2224/49095—Loop shape arrangement parallel in plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a simple connection structure which can be miniaturized for connecting a high-frequency circuit with a waveguide. <P>SOLUTION: In the connection structure between the high-frequency circuit and the waveguide part, the waveguide part 10 having a slot 20 which functions as an antenna capable of transmitting and receiving a high-frequency signal at a tube wall 11, and the high-frequency circuit having a high-frequency signal terminal 31 for at least one of input and output of the high-frequency signal arranged adjacent to the slot 20 are electromagnetically connected with each other by arranging conducting wire 40 one end of which is connected to the high-frequency signal terminal 31 and which functions as an antenna capable of transmitting and receiving the high-frequency signal so as to cross the top of the slot 20. Since the connection structure has a few components and simple structure, it can be miniaturized. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

本発明は、ミリ波等の高周波帯で多く用いられる導波管と高周波回路との接続構造に関するものであり、特に導線を用いた接続構造に関するものである。   The present invention relates to a connection structure between a waveguide and a high-frequency circuit that are often used in a high-frequency band such as millimeter waves, and more particularly to a connection structure using a conducting wire.

ミリ波等の高周波帯における伝送線路として導波管が多く用いられており、高周波回路が搭載された高周波部品と導波管との接続構造に関しては、従来から様々な構造が提案されており、例えば、高周波部品をワイヤによってストリップ線路に接続し、そのストリップ線路と導波管とを整合素子を介して電磁気的に結合した構造が提案されている（例えば、特許文献１を参照。）。
特開2001−102821号公報 Waveguides are often used as transmission lines in high-frequency bands such as millimeter waves, and various structures have been proposed for the connection structure between high-frequency components on which high-frequency circuits are mounted and waveguides. For example, a structure in which a high-frequency component is connected to a strip line with a wire and the strip line and a waveguide are electromagnetically coupled via a matching element has been proposed (see, for example, Patent Document 1).
JP 2001-102821

しかしながら、特許文献１にて提案された構造においては、高周波部品をワイヤによってストリップ線路に接続し、そのストリップ線路と導波管とを整合素子を介して電磁気的に結合するため、構造が複雑で多くの部品が必要になるとともに大型化してしまうという問題があった。また、伝送モードおよび特性インピーダンスの異なるワイヤとストリップ線路との間でインピーダンスの不整合による反射が生じてしまうことから、それを防止するための整合回路が別途必要になるため、実際にはさらに大型化してしまうという問題があった。   However, in the structure proposed in Patent Document 1, a high-frequency component is connected to a strip line by a wire, and the strip line and the waveguide are electromagnetically coupled via a matching element, so that the structure is complicated. There is a problem that many parts are required and the size is increased. In addition, since reflection due to impedance mismatch occurs between the wire and the strip line having different transmission modes and characteristic impedances, a matching circuit is additionally required to prevent this. There was a problem of becoming.

本発明はこのような従来の技術における問題点に鑑みて案出されたものであり、その目的は、高周波回路と導波管とを接続する単純で小型化が可能な接続構造を提供することにある。   The present invention has been devised in view of such problems in the prior art, and an object thereof is to provide a simple and miniaturizable connection structure for connecting a high-frequency circuit and a waveguide. It is in.

本発明の高周波回路と導波管部との接続構造は、高周波信号を送信および受信可能なア
ンテナとして機能するスロットを管壁に有する導波管部と、前記スロットに隣接して配置された前記高周波信号の入力および出力の少なくとも一方のための高周波信号端子を有する高周波回路とを、一方端が前記高周波信号端子に接続され、他方端が前記管壁と絶縁されて非接地端とされるとともに、電気長が前記高周波信号の波長の（２ｎ−１）／４倍（ｎは自然数）とされて前記高周波信号を送信および受信可能なアンテナとして機能する導線を前記スロット上を横断するように配置して電磁気的に接続したことを特徴とするものである。
The connection structure between the high-frequency circuit and the waveguide portion according to the present invention includes a waveguide portion having a slot functioning as an antenna capable of transmitting and receiving a high-frequency signal in the tube wall, and the waveguide portion disposed adjacent to the slot. A high-frequency circuit having a high-frequency signal terminal for at least one of input and output of a high-frequency signal, with one end connected to the high-frequency signal terminal and the other end insulated from the tube wall to be a non-grounded end The electrical length is set to (2n-1) / 4 times the wavelength of the high-frequency signal (n is a natural number), and a conducting wire that functions as an antenna capable of transmitting and receiving the high-frequency signal is arranged so as to cross the slot. Thus, the electromagnetic connection is made.

さらに、本発明の導波管部と高周波回路との接続構造は、上記各構成において、前記スロットの長さは該スロットにおける前記高周波信号の波長のｎ／２倍（ｎは自然数）であることを特徴とするものである。   Furthermore, in the connection structure between the waveguide section and the high frequency circuit according to the present invention, in each of the above configurations, the length of the slot is n / 2 times the wavelength of the high frequency signal in the slot (n is a natural number). It is characterized by.

またさらに、本発明の高周波回路と導波管部との接続構造は、上記各構成において、前記導波管部は中空導波管の内部に誘電体が充填された構造であることを特徴とするものである。   Furthermore, the connection structure between the high-frequency circuit and the waveguide portion according to the present invention is characterized in that, in each of the above configurations, the waveguide portion is a structure in which a hollow waveguide is filled with a dielectric. To do.

さらにまた、本発明の高周波回路と導波管部との接続構造は、上記各構成において、前記導波管部が、誘電体層の上面に配置されて上側の前記管壁となる上側主導体層と、前記誘電体層の下面に配置されて下側の前記管壁となる下側主導体層と、前記高周波信号の伝送方向に前記高周波信号の波長の１／２未満の繰り返し間隔で、かつ前記伝送方向と直交する方向に所定の間隔をあけて、前記上側主導体層および前記下側主導体層の間を電気的に接続するように配置された２列の側壁用貫通導体群とを具備して成り、前記上側主導体層，前記下側主導体層および前記２列の側壁用貫通導体群で囲まれた領域によって高周波信号を伝送する積層型導波管線路であることを特徴とするものである。   Furthermore, in the connection structure between the high-frequency circuit and the waveguide portion according to the present invention, in each of the above configurations, the upper main conductor serving as the upper tube wall is disposed on the upper surface of the dielectric layer. A lower main conductor layer that is disposed on the lower surface of the dielectric layer and serves as the lower tube wall, and a repetition interval of less than half of the wavelength of the high-frequency signal in the transmission direction of the high-frequency signal, And two rows of through conductor groups for side walls arranged to electrically connect the upper main conductor layer and the lower main conductor layer with a predetermined interval in a direction orthogonal to the transmission direction; A laminated waveguide line that transmits a high-frequency signal by a region surrounded by the upper main conductor layer, the lower main conductor layer, and the two rows of through-conductor groups for side walls. It is what.

なお、本明細書において、導線とは線状もしくは帯状の導体のことであり、例えばリボンワイヤーのようなものも含むものである。また、電磁気的に接続するとは、電磁波を介して高周波信号が導通するようにすることである。   In addition, in this specification, a conducting wire is a linear or strip-shaped conductor, and includes, for example, a ribbon wire. In addition, electromagnetic connection means that a high-frequency signal is conducted through electromagnetic waves.

また、スロットにおける高周波信号の波長は、知られているように導波管部が中空の場合と誘電体で満たされている場合とで異なる。導波管部が中空の場合には真空中における波長に等しいが、例えば、導波管部内が比誘電率εｒの誘電体で満たされており、導波管部の周囲が空気の場合のスロットにおける波長λは、真空中における波長をλ０とすると、λ＝λ０／｛（εｒ＋１）／２｝１／２程度となる。 Further, as is known, the wavelength of the high-frequency signal in the slot differs depending on whether the waveguide portion is hollow or filled with a dielectric. When the waveguide portion is hollow, the wavelength is equal to the wavelength in vacuum. For example, the waveguide portion is filled with a dielectric having a relative dielectric constant εr, and the slot around the waveguide portion is air. The wavelength λ is about λ = λ 0 / {(εr + 1) / 2} 1/2 where λ 0 is the wavelength in vacuum.

本発明の高周波回路と導波管部との接続構造によれば、高周波信号を送信および受信可能なアンテナとして機能するスロットを管壁に有する導波管部と、スロットに隣接して配置された高周波信号の入力および出力の少なくとも一方のための高周波信号端子を有する高周波回路とを、一方端が高周波信号端子に接続されて高周波信号を送信および受信可能なアンテナとして機能する導線をスロット上を横断するように配置して電磁気的に接続したことから、導線から送信される高周波信号をスロットで受信することができ、また、スロットから送信される高周波信号を導線で受信することができるので、導波管部と高周波回路とが電磁気的に良好に接続される。これにより、従来の構造で必要であったストリップ線路，ワイヤとストリップ線路との整合回路およびストリップ線路と導波管とを結合する整合素子等が全て不要になるので、単純かつ小型化が可能な高周波回路と導波管部との接続構造を得ることができる。   According to the connection structure between the high-frequency circuit and the waveguide portion of the present invention, the waveguide portion having a slot functioning as an antenna capable of transmitting and receiving a high-frequency signal in the tube wall, and disposed adjacent to the slot. A high-frequency circuit having a high-frequency signal terminal for at least one of high-frequency signal input and output, and a lead wire connected to the high-frequency signal terminal and functioning as an antenna capable of transmitting and receiving high-frequency signals across the slot The high-frequency signal transmitted from the conductor can be received by the slot, and the high-frequency signal transmitted from the slot can be received by the conductor. The wave tube portion and the high-frequency circuit are electromagnetically favorably connected. This eliminates the need for a stripline, a wire-to-stripline matching circuit, a matching element for coupling the stripline and the waveguide, and the like, which are necessary in the conventional structure. A connection structure between the high-frequency circuit and the waveguide portion can be obtained.

また、本発明の高周波回路と導波管部との接続構造によれば、導線およびスロットの両方がアンテナとして機能することから、導線とスロットとの位置関係が導線とスロットとの電磁気的な接続における高周波信号の伝送特性に与える影響が小さいため、導線とスロットとの位置関係をある程度自由に設定できるので、設計の自由度が高く、より小型化が可能な高周波回路と導波管部との接続構造を得ることができる。   Further, according to the connection structure between the high-frequency circuit and the waveguide portion of the present invention, since both the conductor and the slot function as an antenna, the positional relationship between the conductor and the slot is an electromagnetic connection between the conductor and the slot. Because the influence on the transmission characteristics of high-frequency signals is small, the positional relationship between the conductors and the slots can be set to some degree of freedom. Therefore, the degree of freedom in design is high, and the high-frequency circuit and waveguide section can be made more compact. A connection structure can be obtained.

さらに、本発明の高周波回路と導波管部との接続構造によれば、導線は他方端が管壁と絶縁されて非接地端とされているとともに電気長が高周波信号の波長の（２ｎ−１）／４倍（ｎは自然数）であることから、導線がモノポールアンテナとして良好に機能するので、高周波回路と導波管部とを良好に電磁気的に接続することができる。 Furthermore, according to the connection structure between the high-frequency circuit and the waveguide portion of the present invention, the other end of the conducting wire is insulated from the tube wall to be a non-grounded end, and the electrical length is (2n− since 1) / 4 times (n is a natural number), wire since functions well as a monopole antenna, can be satisfactorily electromagnetically connect the high frequency circuit and the waveguide section.

またさらに、本発明の導波管部と高周波回路との接続構造によれば、スロットの長さはスロットにおける高周波信号の波長のｎ／２倍（ｎは自然数）であることから、スロットがアンテナとして良好に機能するので、高周波回路と導波管部とを良好に電磁気的に接続することができる。   Furthermore, according to the connection structure between the waveguide portion and the high-frequency circuit of the present invention, the slot is n / 2 times the wavelength of the high-frequency signal in the slot (n is a natural number). Therefore, the high-frequency circuit and the waveguide portion can be connected electromagnetically satisfactorily.

さらにまた、本発明の高周波回路と導波管部との接続構造によれば、導波管部は中空導波管の内部に誘電体が充填された構造であるときには、導波管部内の高周波信号の波長が短縮されて導波管部を小型化することができるので、より小型の高周波回路と導波管部との接続構造を得ることができる。   Furthermore, according to the connection structure between the high-frequency circuit and the waveguide section of the present invention, when the waveguide section has a structure in which a dielectric is filled in the hollow waveguide, the high-frequency circuit in the waveguide section is used. Since the wavelength of the signal is shortened and the waveguide portion can be reduced in size, a connection structure between a smaller high-frequency circuit and the waveguide portion can be obtained.

またさらに、本発明の高周波回路と導波管部との接続構造によれば、導波管部が、誘電体層の上面に配置されて上側の管壁となる上側主導体層と、誘電体層の下面に配置されて下側の管壁となる下側主導体層と、高周波信号の伝送方向に高周波信号の波長の１／２未満の繰り返し間隔で、かつ伝送方向と直交する方向に所定の間隔をあけて、上側主導体層および下側主導体層の間を電気的に接続するように配置された２列の側壁用貫通導体群とを具備して成り、上側主導体層，下側主導体層および２列の側壁用貫通導体群で囲まれた領域によって高周波信号を伝送する積層型導波管線路であるときには、誘電体からなる積層体の内部に容易に導波管部を形成することができるので、量産性に優れた高周波回路と導波管部との接続構造を得ることができる。   Still further, according to the connection structure between the high-frequency circuit and the waveguide portion of the present invention, the waveguide portion is disposed on the upper surface of the dielectric layer, the upper main conductor layer serving as the upper tube wall, and the dielectric A lower main conductor layer disposed on the lower surface of the layer and serving as a lower tube wall, and a predetermined interval in the direction orthogonal to the transmission direction at a repetition interval of less than 1/2 of the wavelength of the high-frequency signal in the transmission direction of the high-frequency signal And having two rows of through conductor groups for side walls arranged so as to be electrically connected between the upper main conductor layer and the lower main conductor layer with an interval of When the laminated waveguide line transmits a high-frequency signal by the region surrounded by the side main conductor layer and the two rows of through-wall conductors for the side wall, the waveguide portion can be easily placed inside the dielectric laminate. Since it can be formed, it is possible to obtain a connection structure between a high-frequency circuit and a waveguide portion that is excellent in mass productivity. Can.

以下、本発明の高周波回路と導波管部との接続構造を添付の図面を参照しつつ詳細に説明する。   Hereinafter, a connection structure between a high-frequency circuit and a waveguide portion according to the present invention will be described in detail with reference to the accompanying drawings.

（実施の形態の第１の例）
図１は本発明の高周波回路と導波管部との接続構造の実施の形態の第１の例を模式的に示す斜視図である。図２は図１に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。 (First example of embodiment)
FIG. 1 is a perspective view schematically showing a first example of an embodiment of a connection structure between a high-frequency circuit and a waveguide portion of the present invention. FIG. 2 is a longitudinal sectional view schematically showing an example of a connection structure between the high-frequency circuit and the waveguide portion shown in FIG.

本例の高周波回路と導波管部との接続構造は、図１および図２に示すように、高周波信号を送信および受信可能なアンテナとして機能するスロット20を上側の管壁11に有する導波管部10と、スロット20に隣接して配置された高周波信号の入力および出力の少なくとも一方のための高周波信号端子31を有する高周波回路とを、一方端が高周波信号端子31に接続されて高周波信号を送信および受信可能なアンテナとして機能する導線40をスロット20上を横断するように配置して電磁気的に接続した構造を備えている。なお、高周波回路は導波管部10の上に配置された高周波部品30に内蔵されており、高周波信号端子31は高周波部品30の上面に配置されている。そして、導線40の電気長は高周波信号の波長の１／４倍とされており、導線40の他方端は導波管部10の管壁11から離れて宙に浮いた状態とされている。また、導線40は平面視したときにスロット20の長さ方向の中央でスロット20と直交するように配置されている。   As shown in FIGS. 1 and 2, the connection structure between the high-frequency circuit and the waveguide portion in this example is a waveguide having a slot 20 in the upper tube wall 11 that functions as an antenna capable of transmitting and receiving high-frequency signals. A high-frequency circuit having a high-frequency signal terminal 31 for at least one of input and output of a high-frequency signal disposed adjacent to the tube portion 10 and the slot 20 is connected to the high-frequency signal terminal 31 at one end thereof. A conductor 40 that functions as an antenna capable of transmitting and receiving is disposed so as to cross the slot 20 and is electromagnetically connected. The high-frequency circuit is built in the high-frequency component 30 disposed on the waveguide portion 10, and the high-frequency signal terminal 31 is disposed on the upper surface of the high-frequency component 30. The electrical length of the conducting wire 40 is ¼ times the wavelength of the high-frequency signal, and the other end of the conducting wire 40 is separated from the tube wall 11 of the waveguide portion 10 and floats in the air. Further, the conductive wire 40 is disposed so as to be orthogonal to the slot 20 at the center in the length direction of the slot 20 when viewed in plan.

また、本例の高周波回路と導波管部との接続構造において、導波管部10は中空の方形導波管とされており、スロット20は、導波管部10の上側の管壁11の幅方向の中央部に、長さ方向が導波管部10の幅方向と平行になるように形成されており、スロット20の長さはスロット20における高周波信号の波長の１／２倍に設定されている。   In the connection structure between the high-frequency circuit and the waveguide portion of this example, the waveguide portion 10 is a hollow rectangular waveguide, and the slot 20 is formed on the tube wall 11 on the upper side of the waveguide portion 10. Is formed so that the length direction is parallel to the width direction of the waveguide portion 10 and the length of the slot 20 is ½ times the wavelength of the high-frequency signal in the slot 20. Is set.

このような構造を備える本例の高周波回路と導波管部との接続構造によれば、一方端が高周波回路を内蔵した高周波部品30の高周波信号端子31に接続されて高周波信号を送信および受信可能なアンテナとして機能する導線40を、高周波信号を送信および受信可能なアンテナとして機能するスロット20上を横断するように配置したことから、導線40から送信される高周波信号をスロット20で受信することができ、また、スロット20から送信される高周波信号を導線40で受信することができるので、スロット20が形成された導波管部10と高周波部品30に内蔵された高周波回路とを電磁気的に良好に接続することができる。これにより、従来の構造で必要であったストリップ線路，ワイヤとストリップ線路との整合回路およびストリップ線路と導波管とを結合する整合素子等が全て不要になるため、単純かつ小型化が可能な高周波回路と導波管部との接続構造を得ることができる。   According to the connection structure between the high-frequency circuit of this example having such a structure and the waveguide section, one end is connected to the high-frequency signal terminal 31 of the high-frequency component 30 incorporating the high-frequency circuit to transmit and receive high-frequency signals. Because the conductor 40 that functions as a possible antenna is arranged so as to cross over the slot 20 that functions as an antenna capable of transmitting and receiving high-frequency signals, the high-frequency signal transmitted from the conductor 40 is received in the slot 20. In addition, since the high-frequency signal transmitted from the slot 20 can be received by the conducting wire 40, the waveguide section 10 in which the slot 20 is formed and the high-frequency circuit built in the high-frequency component 30 are electromagnetically connected. It can be connected well. This eliminates the need for a stripline, a wire-to-stripline matching circuit, a matching element for coupling the stripline and the waveguide, and the like, which are necessary in the conventional structure. A connection structure between the high-frequency circuit and the waveguide portion can be obtained.

また、本例の高周波回路と導波管部との接続構造によれば、導線40およびスロット20の両方がアンテナとして機能することから、導線40とスロット20との位置関係が導線40とスロット20との電磁気的な接続における高周波信号の伝送特性に与える影響が小さいため、導線40とスロット20との位置関係をある程度自由に設定できるので、設計の自由度が高く、より小型化が可能な高周波回路と導波管部との接続構造を得ることができる。   In addition, according to the connection structure between the high-frequency circuit and the waveguide portion in this example, since both the conductor 40 and the slot 20 function as an antenna, the positional relationship between the conductor 40 and the slot 20 is the same as the conductor 40 and the slot 20. Because the influence on the transmission characteristics of the high-frequency signal in the electromagnetic connection with the cable is small, the positional relationship between the conductor 40 and the slot 20 can be set freely to some extent, so the design freedom is high and the high-frequency that can be made smaller A connection structure between the circuit and the waveguide portion can be obtained.

なお、本例の高周波回路と導波管部との接続構造においては、高周波部品30に内蔵された高周波回路から高周波信号端子31を介して出力された高周波信号は、導線40およびスロット20を介して導波管部10の長さ方向の両側へ伝送される。また、導波管部10の長さ方向の一方または他方あるいは両方から伝送された信号はスロット20，導線40および高周波信号端子31を介して高周波部品30に内蔵された高周波回路に伝送される。   In the connection structure between the high-frequency circuit and the waveguide portion in this example, the high-frequency signal output from the high-frequency circuit built in the high-frequency component 30 via the high-frequency signal terminal 31 is transmitted via the conductor 40 and the slot 20. Then, it is transmitted to both sides in the length direction of the waveguide portion 10. Further, a signal transmitted from one or the other or both in the length direction of the waveguide portion 10 is transmitted to a high frequency circuit built in the high frequency component 30 through the slot 20, the conductive wire 40, and the high frequency signal terminal 31.

また、本例の高周波回路と導波管部との接続構造によれば、導線40は他方端が導波管部10の管壁11と絶縁されて非接地端とされているとともに電気長が高周波信号の波長の１／４倍であることから、導線40がモノポールアンテナとして良好に機能するので、高周波回路と導波管部10とを良好に接続することができる。   Further, according to the connection structure between the high-frequency circuit and the waveguide portion in this example, the other end of the conducting wire 40 is insulated from the tube wall 11 of the waveguide portion 10 to be a non-grounded end and has an electrical length. Since it is 1/4 times the wavelength of the high-frequency signal, the conductive wire 40 functions well as a monopole antenna, so that the high-frequency circuit and the waveguide portion 10 can be connected well.

さらに、本例の高周波回路と導波管部との接続構造によれば、スロット20の長さがスロット20における高周波信号の波長の１／２倍であることから、スロット20がアンテナとして良好に機能するので、高周波回路と導波管部10とを良好に接続することができる。   Furthermore, according to the connection structure between the high-frequency circuit and the waveguide portion in this example, the length of the slot 20 is ½ times the wavelength of the high-frequency signal in the slot 20, so that the slot 20 is excellent as an antenna. Since it functions, the high-frequency circuit and the waveguide section 10 can be connected well.

またさらに、本例の高周波回路と導波管部との接続構造によれば、平面視したときに導線40がスロット20の長さ方向と直交するように配置されていることから、導線40から発生する電磁波における電界および磁界の向きとスロット20から発生する電磁波における電界および磁界の向きとが水平方向において一致するので、高周波回路と導波管部とを良好に電磁気的に接続することができる。   Still further, according to the connection structure between the high-frequency circuit and the waveguide portion of the present example, the conductor 40 is arranged so as to be orthogonal to the length direction of the slot 20 when viewed in plan. Since the direction of the electric field and magnetic field in the generated electromagnetic wave coincides with the direction of the electric field and magnetic field in the electromagnetic wave generated from the slot 20 in the horizontal direction, the high-frequency circuit and the waveguide portion can be connected electromagnetically satisfactorily. .

（実施の形態の第２の例）
図３は本発明の高周波回路と導波管部との接続構造の実施の形態の第２の例を模式的に示す斜視図である。図４は図３に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。なお、本例においては前述した第１の例と異なる点のみについて説明し、同様の構成要素については同一の参照符号を用いて重複する説明を省略する。 (Second example of embodiment)
FIG. 3 is a perspective view schematically showing a second example of the embodiment of the connection structure between the high-frequency circuit and the waveguide portion of the present invention. FIG. 4 is a longitudinal sectional view schematically showing an example of a connection structure between the high-frequency circuit and the waveguide portion shown in FIG. Note that in this example, only differences from the first example described above will be described, and the same components will be denoted by the same reference numerals, and redundant description will be omitted.

本例の高周波回路と導波管部との接続構造においては、図３および図４に示すように、導波管部10が、誘電体層15の上面に配置されて上側の管壁11となる上側主導体層11ａと、誘電体層15の下面に配置されて下側の管壁11となる下側主導体層11ｂと、高周波信号の伝送方向に高周波信号の波長の１／２未満の繰り返し間隔で、かつ伝送方向と直交する方向に所定の間隔をあけて、上側主導体層11ａおよび下側主導体層11ｂの間を電気的に接続するように配置された２列の側壁用貫通導体群11ｃ，11ｃとを具備して成り、上側主導体層11ａ，下側主導体層11ｂおよび２列の側壁用貫通導体群11ｃ，11ｃで囲まれた領域によって高周波信号を伝送する積層型導波管線路で構成されている。そして、導波管部10の上側の管壁11を構成する上側主導体層11ａにスロット20が形成されており、上側主導体層11ａの上に高周波部品30が配置されている。なお、図３においては、導波管部10の内部構造をわかり易くするために、誘電体層15の図示を省略し、導波管部10の上側の管壁11となる上側主導体層11ａを部分的に取り除いた状態を示している。   In the connection structure between the high-frequency circuit and the waveguide portion of this example, as shown in FIGS. 3 and 4, the waveguide portion 10 is disposed on the upper surface of the dielectric layer 15 and is connected to the upper tube wall 11. An upper main conductor layer 11a, a lower main conductor layer 11b disposed on the lower surface of the dielectric layer 15 and serving as the lower tube wall 11, and less than a half of the wavelength of the high frequency signal in the transmission direction of the high frequency signal. Two rows of side wall penetrations arranged to electrically connect the upper main conductor layer 11a and the lower main conductor layer 11b with a predetermined interval in the direction orthogonal to the transmission direction at a repetition interval A laminated conductor that includes a conductor group 11c, 11c and transmits a high-frequency signal by a region surrounded by the upper main conductor layer 11a, the lower main conductor layer 11b, and the two rows of through-hole conductor groups 11c, 11c. It consists of a wave tube line. A slot 20 is formed in the upper main conductor layer 11a constituting the upper tube wall 11 of the waveguide portion 10, and the high-frequency component 30 is arranged on the upper main conductor layer 11a. In FIG. 3, in order to make the internal structure of the waveguide portion 10 easier to understand, the dielectric layer 15 is not shown, and the upper main conductor layer 11 a serving as the upper tube wall 11 of the waveguide portion 10 is provided. A partially removed state is shown.

本例の高周波回路と導波管部との接続構造によれば、導波管部10が積層型導波管線路で構成されていることから、誘電体からなる積層体の内部に容易に導波管部10を形成することができるので、量産性に優れた高周波回路と導波管部との接続構造を得ることができる。また、誘電体層15の存在により導波管部10内の高周波信号の波長が短縮されて導波管部10を小型化することができるので、より小型の高周波回路と導波管部10との接続構造を得ることができる。   According to the connection structure between the high-frequency circuit and the waveguide portion in this example, since the waveguide portion 10 is composed of a laminated waveguide line, it can be easily introduced into the inside of the dielectric laminate. Since the wave tube portion 10 can be formed, a connection structure between the high frequency circuit and the waveguide portion that is excellent in mass productivity can be obtained. Further, the presence of the dielectric layer 15 shortens the wavelength of the high-frequency signal in the waveguide section 10 and can reduce the size of the waveguide section 10. Therefore, the smaller-sized high-frequency circuit and the waveguide section 10 The connection structure can be obtained.

（実施の形態の第３の例）
図５は本発明の高周波回路と導波管部との接続構造の実施の形態の第３の例を模式的に示す斜視図である。図６は図５に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。なお、本例においては前述した第１の例と異なる点のみについて説明し、同様の構成要素については同一の参照符号を用いて重複する説明を省略する。 (Third example of embodiment)
FIG. 5 is a perspective view schematically showing a third example of the embodiment of the connection structure between the high-frequency circuit and the waveguide portion of the present invention. FIG. 6 is a longitudinal sectional view schematically showing an example of a connection structure between the high-frequency circuit and the waveguide portion shown in FIG. Note that in this example, only differences from the first example described above will be described, and the same components will be denoted by the same reference numerals, and redundant description will be omitted.

本例の高周波回路と導波管部との接続構造においては、図５および図６に示すように、導波管部10が中空導波管の内部に誘電体13が充填された構造とされている。そして、導波管部10の管壁11のスロット20を間に挟んで高周波信号端子31と反対側に管壁11から絶縁された島状導体17が配置されており、その島状導体17に導線40の他方端が接続されている。なお、島状導体17は誘電体13の上面における管壁11に形成された貫通孔の中央に管壁11から離して配置されている。   In the connection structure between the high-frequency circuit and the waveguide portion in this example, as shown in FIGS. 5 and 6, the waveguide portion 10 has a structure in which a dielectric 13 is filled in a hollow waveguide. ing. An island-shaped conductor 17 insulated from the tube wall 11 is arranged on the opposite side of the slot 20 of the tube wall 11 of the waveguide portion 10 from the high-frequency signal terminal 31, and the island-shaped conductor 17 The other end of the conducting wire 40 is connected. The island-like conductor 17 is disposed away from the tube wall 11 in the center of the through hole formed in the tube wall 11 on the upper surface of the dielectric 13.

このような構成を備える本例の高周波回路と導波管部との接続構造によれば、導波管部10の管壁11のスロット20を間に挟んで高周波信号端子31と反対側に管壁11から絶縁されて配置された島状導体17に導線40の他方端が接続されていることから、導線40の両端を固定することができるので、導線40の形状が安定して信頼性に優れた高周波回路と導波管部との接続構造を得ることができる。   According to the connection structure between the high-frequency circuit and the waveguide portion of this example having such a configuration, the tube is placed on the opposite side of the high-frequency signal terminal 31 with the slot 20 of the tube wall 11 of the waveguide portion 10 interposed therebetween. Since the other end of the conducting wire 40 is connected to the island-shaped conductor 17 arranged insulated from the wall 11, both ends of the conducting wire 40 can be fixed, so that the shape of the conducting wire 40 is stable and reliable. An excellent connection structure between the high-frequency circuit and the waveguide portion can be obtained.

また、本例の高周波回路と導波管部との接続構造によれば、誘電体13の存在により導波管部10内の高周波信号の波長が短縮されて導波管部10を小型化することができるので、より小型の高周波回路と導波管部10との接続構造を得ることができる。   In addition, according to the connection structure between the high-frequency circuit and the waveguide portion of this example, the wavelength of the high-frequency signal in the waveguide portion 10 is shortened due to the presence of the dielectric 13, thereby reducing the size of the waveguide portion 10. Therefore, a connection structure between a smaller high-frequency circuit and the waveguide unit 10 can be obtained.

（実施の形態の第４の例）
図７は本発明の高周波回路と導波管部との接続構造の実施の形態の第４の例を模式的に示す斜視図である。図８は図７に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。図９は図７に示す高周波回路と導波管部との接続構造の例を模式的に示す平面図である。なお、本例においては前述した第２の例と異なる点のみについて説明し、同様の構成要素については同一の参照符号を用いて重複する説明を省略する。 (Fourth example of embodiment)
FIG. 7 is a perspective view schematically showing a fourth example of the embodiment of the connection structure between the high-frequency circuit and the waveguide portion of the present invention. FIG. 8 is a longitudinal sectional view schematically showing an example of a connection structure between the high-frequency circuit and the waveguide portion shown in FIG. FIG. 9 is a plan view schematically showing an example of a connection structure between the high-frequency circuit and the waveguide portion shown in FIG. In this example, only points different from the second example described above will be described, and the same components will be denoted by the same reference numerals, and redundant description will be omitted.

本例の高周波回路と導波管部との接続構造においては、図７〜図９に示すように、導波管部10の長さ方向における一方の端部に、高周波信号の伝送方向（導波管部10の長さ方向）と直交する方向に高周波信号の波長の１／２未満の繰り返し間隔で上側主導体層11ａおよび下側主導体層11ｂを接続するように端面用貫通導体群11ｄが配置されており、この端面用貫通導体群11ｄが導波管部10の端面となる管壁11を構成している。   In the connection structure between the high-frequency circuit and the waveguide portion in this example, as shown in FIGS. The end face through conductor group 11d is connected so that the upper main conductor layer 11a and the lower main conductor layer 11b are connected in a direction orthogonal to the length direction of the wave tube section 10 at a repetition interval of less than half of the wavelength of the high frequency signal. This end face through conductor group 11d constitutes a tube wall 11 serving as an end face of the waveguide section 10.

このような構造を備える本例の高周波回路と導波管部との接続構造においては、高周波部品30に内蔵された高周波回路から高周波信号端子31を介して出力された高周波信号は、導線40およびスロット20を介して導波管部10の長さ方向における他方の端部へ向けて伝送される。また、導波管部10の長さ方向の他方の端部側から伝送された高周波信号はスロット20，導線40および高周波信号端子31を介して高周波部品30に内蔵された高周波回路に伝送される。   In the connection structure between the high-frequency circuit having this structure and the waveguide section, the high-frequency signal output from the high-frequency circuit built in the high-frequency component 30 through the high-frequency signal terminal 31 is the conductor 40 and The signal is transmitted toward the other end in the length direction of the waveguide portion 10 through the slot 20. Further, the high frequency signal transmitted from the other end side in the length direction of the waveguide portion 10 is transmitted to the high frequency circuit incorporated in the high frequency component 30 through the slot 20, the conductive wire 40 and the high frequency signal terminal 31. .

なお、本例の高周波回路と導波管部との接続構造においては、導波管の端面となる管壁11の内側からスロット20の幅方向の中心までの距離を導波管部10における高周波信号の波長のｎ／２倍（ｎは自然数）に設定すると、導波管部10の長さ方向において方形導波管の基本モード（ＴＥ10モード）の電界強度が最も高い位置にスロット20を形成できるので、高周波回路と導波管部10との接続における損失を小さくすることができる。 In the connection structure between the high-frequency circuit and the waveguide portion in this example, the distance from the inside of the tube wall 11 serving as the end face of the waveguide to the center in the width direction of the slot 20 is the high-frequency in the waveguide portion 10. If it is set to n / 2 times the wavelength of the signal (n is a natural number), the slot 20 is formed at a position where the electric field strength of the fundamental mode (TE 10 mode) of the rectangular waveguide is highest in the length direction of the waveguide section 10. Since it can be formed, the loss in the connection between the high-frequency circuit and the waveguide portion 10 can be reduced.

（実施の形態の第５の例）
図10は本発明の高周波回路と導波管部との接続構造の実施の形態の第５の例を模式的に示す斜視図である。図11は図10に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。図12は図10に示す高周波回路と導波管部との接続構造の例を模式的に示す平面図である。なお、本例においては前述した第４の例と異なる点のみについて説明し、同様の構成要素については同一の参照符号を用いて重複する説明を省略する。 (Fifth example of embodiment)
FIG. 10 is a perspective view schematically showing a fifth example of the embodiment of the connection structure between the high-frequency circuit and the waveguide portion of the present invention. FIG. 11 is a longitudinal sectional view schematically showing an example of a connection structure between the high-frequency circuit and the waveguide portion shown in FIG. FIG. 12 is a plan view schematically showing an example of a connection structure between the high-frequency circuit and the waveguide portion shown in FIG. In this example, only points different from the above-described fourth example will be described, and the same components will be denoted by the same reference numerals, and redundant description will be omitted.

本例の高周波回路と導波管部との接続構造においては、図10〜図12に示すように、導波管部10の管壁11のスロット20を間に挟んで高周波信号端子31と反対側に管壁11から絶縁された島状導体17が配置されており、その島状導体17に導線40の他方端が接続されている。なお、島状導体17は誘電体層15の上面における管壁11に形成された貫通孔の中央に管壁11から離して配置されている。   In the connection structure between the high-frequency circuit and the waveguide portion in this example, as shown in FIGS. 10 to 12, the slot 20 of the tube wall 11 of the waveguide portion 10 is sandwiched between and opposite to the high-frequency signal terminal 31. An island conductor 17 insulated from the tube wall 11 is disposed on the side, and the other end of the conducting wire 40 is connected to the island conductor 17. The island-shaped conductor 17 is disposed away from the tube wall 11 in the center of the through hole formed in the tube wall 11 on the upper surface of the dielectric layer 15.

このような構成を備える本例の高周波回路と導波管部との接続構造によれば、導波管部10の管壁11のスロット20を間に挟んで高周波信号端子31と反対側に管壁11から絶縁されて配置された島状導体17に導線40の他方端が接続されていることから、導線40の両端を固定することができるので、導線40の形状が安定して信頼性に優れた高周波回路と導波管部との接続構造を得ることができる。   According to the connection structure between the high-frequency circuit and the waveguide portion of this example having such a configuration, the tube is placed on the opposite side of the high-frequency signal terminal 31 with the slot 20 of the tube wall 11 of the waveguide portion 10 interposed therebetween. Since the other end of the conducting wire 40 is connected to the island-shaped conductor 17 arranged insulated from the wall 11, both ends of the conducting wire 40 can be fixed, so that the shape of the conducting wire 40 is stable and reliable. An excellent connection structure between the high-frequency circuit and the waveguide portion can be obtained.

本発明の高周波回路と導波管部との接続構造において、導波管部10としては、長方形状の断面を有する方形導波管が好適に使用でき、基本モード（ＴＥ10モード）を用いる場合には、例えば、幅が高周波信号の波長の１／２以上１未満とされ、高さは幅の１／２程度とされる。 In the connection structure between the high-frequency circuit and the waveguide portion of the present invention, a rectangular waveguide having a rectangular cross section can be suitably used as the waveguide portion 10 and the fundamental mode (TE 10 mode) is used. For example, the width is not less than ½ and less than 1 of the wavelength of the high-frequency signal, and the height is approximately ½ of the width.

スロット20は、導波管部10の上側の管壁11を貫通するように、矩形状に形成される。また、基本モード（ＴＥ10モード）を使用する場合には、高周波回路と導波管部10とを接続する際の損失を小さくするためにスロット20を導波管部10の幅方向の中央部に形成するのが望ましい。また、スロット20の長さ方向が導波管部10の幅方向に平行になるように形成するのが望ましい。このようなスロット20は、導波管部10を伝送する高周波信号の周波数に応じて、例えば、幅が0.05ｍｍ〜0.5ｍｍ程度、長さが0.3ｍｍ〜４ｍｍ程度の矩形状に形成される。 The slot 20 is formed in a rectangular shape so as to penetrate the upper tube wall 11 of the waveguide portion 10. When the fundamental mode (TE 10 mode) is used, the slot 20 is arranged in the center of the waveguide portion 10 in the width direction in order to reduce the loss when the high frequency circuit and the waveguide portion 10 are connected. It is desirable to form. Further, it is desirable to form the slot 20 so that the length direction thereof is parallel to the width direction of the waveguide portion 10. Such a slot 20 is formed in a rectangular shape having a width of about 0.05 mm to 0.5 mm and a length of about 0.3 mm to 4 mm, for example, according to the frequency of the high-frequency signal transmitted through the waveguide section 10.

導波管部10が金属製の導波管の場合には、例えば、アルミニウムや銅などの良導電性の金属を用いて形成することができ、伝送する高周波信号の周波数に応じて、幅が、例えば２ｍｍ〜８ｍｍ程度、高さが、例えば１ｍｍ〜４ｍｍ程度とされる。また、金属導波管の管壁の厚みは、例えば、0.1ｍｍ〜１ｍｍ程度とされる。   When the waveguide portion 10 is a metal waveguide, for example, it can be formed using a highly conductive metal such as aluminum or copper, and has a width according to the frequency of the high-frequency signal to be transmitted. For example, the height is about 2 mm to 8 mm, and the height is about 1 mm to 4 mm, for example. Moreover, the thickness of the tube wall of a metal waveguide shall be about 0.1 mm-1 mm, for example.

また、中空導波管の内部に充填する誘電体13の材質については、高周波信号の伝送を妨げない特性を有するものであれば特に限定するものではなく、例えばガラスエポキシ等の樹脂を使用することができ、その比誘電率は、例えば２〜20程度とされる。   Further, the material of the dielectric 13 filling the inside of the hollow waveguide is not particularly limited as long as it has characteristics that do not hinder the transmission of high-frequency signals. For example, a resin such as glass epoxy is used. The relative dielectric constant is, for example, about 2 to 20.

導波管部10が積層型導波管線路の場合には、誘電体層15の比誘電率は、例えば２〜20程度とされる。誘電体層15の材質としては、高周波信号の伝送を妨げない特性を有するものであれば特に限定するものではなく、ガラスエポキシ等の樹脂を使用することも可能であるが、積層型導波管線路を形成する際の精度および製造の容易性の点からは誘電体セラミックスを使用することが望ましい。上側主導体層11ａおよび下側主導体層11ｂは、良導電性の金属からなり、その厚みは、例えば、３μｍ〜50μｍ程度とされる。一対の側壁用貫通導体群11ｃ，11ｃは導波管部10の両側面の管壁として機能し、端面用貫通導体群11ｄは導波管部10の長さ方向における一方の端面の管壁として機能する。それぞれの繰り返し間隔は、高周波信号の漏洩を防止する観点から、導波管部10を伝送する高周波信号の波長の１／２未満の繰り返し間隔であることが必要であり、伝送する高周波信号の１／４未満であることが好ましい。このような一対の側壁用貫通導体群11ｃ，11ｃおよび端面用貫通導体群11ｄとしてはビアホールやスルーホールを用いることができ、その直径は、例えば0.05ｍｍ〜0.5ｍｍ程度とされる。   When the waveguide portion 10 is a laminated waveguide line, the dielectric constant of the dielectric layer 15 is, for example, about 2-20. The material of the dielectric layer 15 is not particularly limited as long as it has a characteristic that does not hinder the transmission of high-frequency signals, and a resin such as glass epoxy can be used. It is desirable to use dielectric ceramics from the viewpoint of accuracy in forming the line and ease of manufacturing. The upper main conductor layer 11a and the lower main conductor layer 11b are made of a highly conductive metal and have a thickness of, for example, about 3 μm to 50 μm. The pair of side wall through conductor groups 11c and 11c function as tube walls on both sides of the waveguide portion 10, and the end surface through conductor group 11d functions as a tube wall on one end surface in the length direction of the waveguide portion 10. Function. Each repetition interval needs to be a repetition interval that is less than ½ of the wavelength of the high-frequency signal transmitted through the waveguide unit 10 from the viewpoint of preventing leakage of the high-frequency signal. It is preferably less than / 4. As such a pair of through-hole conductor groups 11c and 11c for side walls and through-hole conductor groups 11d for end faces, via holes or through holes can be used, and the diameter thereof is, for example, about 0.05 mm to 0.5 mm.

このような誘電体層15，上側主導体層11ａ，下側主導体層11ｂ，一対の側壁用貫通導体群11ｃ，11ｃ，端面用貫通導体群11ｄおよびスロット20を備える積層型導波管線路は、例えば、次のようにして作製することができる。まず、ガラス，アルミナ，窒化アルミニウム等を主成分とするセラミック原料粉末に適当な有機溶剤と溶媒とを添加混合して得た泥漿を用いて、ドクターブレード法やカレンダーロール法等によってセラミックグリーンシートを作製する。次に、得られたセラミックグリーンシートにパンチングマシーン等を用いて側壁用貫通導体群11ｃおよび端面用貫通導体群11ｄを形成するための貫通孔を形成し、金属粉末に適当なアルミナ・シリカ・マグネシア等の酸化物や有機溶剤等を添加混合してペースト状にしたものを、厚膜印刷法により貫通孔に充填するとともにセラミックグリーンシートの表面に塗布して導体ペースト付きセラミックグリーンシートを作製する。次に、得られた導体ペースト付きセラミックグリーンシートを積層し、ホットプレス装置を用いて圧着して積層体を形成する。そして、得られた積層体を、誘電体層15がガラスセラミックスの場合は850℃〜1000℃程度、アルミナ質セラミックスの場合は1500℃〜1700℃程度、窒化アルミニウム質セラミックスの場合は1600℃〜1900℃程度のピーク温度で焼成することによって作製される。なお、金属粉末としては、誘電体層15がガラスセラミックスの場合は銅，金または銀が、誘電体層15がアルミナ質セラミックスまたは窒化アルミニウム質セラミックスの場合にはタングステンまたはモリブデンが好適である。   A multilayer waveguide having such a dielectric layer 15, an upper main conductor layer 11a, a lower main conductor layer 11b, a pair of through-hole conductor groups 11c and 11c for side walls, an end-surface through-conductor group 11d and a slot 20 is as follows. For example, it can be produced as follows. First, using a slurry obtained by adding and mixing a suitable organic solvent and solvent to a ceramic raw material powder mainly composed of glass, alumina, aluminum nitride, etc., a ceramic green sheet is formed by a doctor blade method or a calender roll method. Make it. Next, through holes for forming through-hole conductor groups 11c for side walls and through-conductor groups 11d for end faces are formed on the obtained ceramic green sheet using a punching machine or the like, and alumina, silica, magnesia suitable for metal powder is formed. A paste formed by adding an oxide such as an organic solvent or the like to a paste is filled into a through hole by a thick film printing method and applied to the surface of the ceramic green sheet to produce a ceramic green sheet with a conductor paste. Next, the obtained ceramic green sheets with a conductive paste are laminated and pressed using a hot press apparatus to form a laminate. And when the dielectric layer 15 is a glass ceramic, the obtained laminate is about 850 ° C. to 1000 ° C., an alumina ceramic is about 1500 ° C. to 1700 ° C., and an aluminum nitride ceramic is 1600 ° C. to 1900 It is produced by firing at a peak temperature of about ° C. As the metal powder, copper, gold or silver is suitable when the dielectric layer 15 is glass ceramic, and tungsten or molybdenum is suitable when the dielectric layer 15 is alumina ceramic or aluminum nitride ceramic.

導線40は、例えば金，アルミニウム等の金属線からなり、例えば0.01ｍｍ〜0.05ｍｍ程度の太さとされ、例えばワイヤボンダを用いて容易に形成することができる。導線40の他方端を宙に浮かせる場合には、例えば、導線40の一方端を高周波信号端子31に接続した後に、導線40の他方端を接続する場所の状態およびワイヤボンダの設定を調整することにより、導線40の他方端が接続されないようにすればよく、導線40の弾性によって導線40の他方端を宙に浮かせることができる。さらに、導線40およびその周囲を樹脂で被覆して固定することにより、導線40の形状を安定化することができる。   The conducting wire 40 is made of a metal wire such as gold or aluminum, and has a thickness of about 0.01 mm to 0.05 mm, for example, and can be easily formed using, for example, a wire bonder. When the other end of the conducting wire 40 is suspended in the air, for example, after connecting one end of the conducting wire 40 to the high-frequency signal terminal 31, the state of the place where the other end of the conducting wire 40 is connected and the setting of the wire bonder are adjusted. The other end of the conducting wire 40 may be prevented from being connected, and the other end of the conducting wire 40 can be suspended by the elasticity of the conducting wire 40. Furthermore, the shape of the conducting wire 40 can be stabilized by covering and fixing the conducting wire 40 and its periphery with a resin.

（変形例）
本発明は前述した実施の形態の第１〜第５の例に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更，改良が可能である。 (Modification)
The present invention is not limited to the first to fifth examples of the embodiment described above, and various modifications and improvements can be made without departing from the gist of the present invention.

例えば、前述した実施の形態の例においては、高周波回路が内蔵された高周波部品30が導波管部10の管壁11に配置された例を示したが、高周波回路が内蔵された高周波部品30が導波管部10の管壁11に隣接して配置された誘電体基板等に配置されるようにしても構わない。また、導波管部10の管壁11に隣接して配置された誘電体基板に配置されたストリップ線路等によって高周波回路が形成されていても構わない。   For example, in the example of the above-described embodiment, the example in which the high-frequency component 30 incorporating the high-frequency circuit is disposed on the tube wall 11 of the waveguide unit 10 is shown. However, the high-frequency component 30 incorporating the high-frequency circuit is illustrated. May be disposed on a dielectric substrate or the like disposed adjacent to the tube wall 11 of the waveguide portion 10. Further, a high frequency circuit may be formed by a strip line or the like disposed on a dielectric substrate disposed adjacent to the tube wall 11 of the waveguide portion 10.

また、前述した実施の形態の例においては、導波管部10の上側の管壁11にスロット20が形成された例を示したが、方形導波管からなる導波管部10の下面，側面または端面を形成する管壁11あるいは円形導波管からなる導波管部10の端面を形成する管壁11等にスロット20が形成されるようにしても構わない。   Further, in the example of the embodiment described above, an example in which the slot 20 is formed in the tube wall 11 on the upper side of the waveguide unit 10 is shown, but the lower surface of the waveguide unit 10 made of a rectangular waveguide, The slot 20 may be formed on the tube wall 11 forming the side surface or the end surface or the tube wall 11 forming the end surface of the waveguide portion 10 formed of a circular waveguide.

さらに、前述した実施の形態の例においては、長さ方向が導波管部10の幅方向に平行になるようにスロット20が形成された例を示したが、高周波回路と導波管部10とを接続する際の損失の増加を許容できる場合には、長さ方向が導波管部10の幅方向に対して傾斜するようにスロット20が形成されるようにしてもよい。また、長さ方向が導波管部10の長さ方向に平行になるようにスロット20が形成されるようにしてもよいが、そのときには、スロット20が導波管部10の側壁に隣接するか、側壁から高周波信号の波長のｎ／２倍（ｎは自然数）の位置に形成されることが望ましい。   Furthermore, in the example of the above-described embodiment, an example in which the slot 20 is formed so that the length direction is parallel to the width direction of the waveguide portion 10 is shown. Slot 20 may be formed so that the length direction is inclined with respect to the width direction of the waveguide portion 10. Further, the slot 20 may be formed so that the length direction is parallel to the length direction of the waveguide portion 10, but in that case, the slot 20 is adjacent to the side wall of the waveguide portion 10. Alternatively, it is desirable to form it at a position n / 2 times (n is a natural number) the wavelength of the high-frequency signal from the side wall.

またさらに、前述した実施の形態の例においては、スロット20の長さがスロット20における高周波信号の波長の１／２倍である例を示したが、ｎ／２倍（ｎは自然数）であればよいため、導波管部10の幅が充分に大きい場合には、例えば、高周波信号の波長と同じ長さや高周波信号の波長の３／２倍等にしても構わない。   Furthermore, in the example of the embodiment described above, the example in which the length of the slot 20 is ½ times the wavelength of the high-frequency signal in the slot 20 is shown, but it may be n / 2 times (n is a natural number). Therefore, when the width of the waveguide portion 10 is sufficiently large, for example, it may be the same length as the wavelength of the high-frequency signal or 3/2 times the wavelength of the high-frequency signal.

さらにまた、前述した実施の形態の例においては、平面視したときに導線40がスロット20の長さ方向の中央でスロット20と直交する例を示したが、スロット20と斜めに交わるようにしてもよく、また、スロット20の長さ方向の中央からずれた場所で交わるようにしても構わない。   Furthermore, in the example of the above-described embodiment, the example in which the conductor 40 is orthogonal to the slot 20 at the center in the length direction of the slot 20 when viewed in plan is shown. Alternatively, they may intersect at a location shifted from the center of the slot 20 in the length direction.

またさらに、前述した実施の形態の第３および第５の例においては、島状導体17が導波管部10の管壁11に形成された貫通孔の中央に管壁11から離して配置された例を示したが、例えば、導波管部10の管壁11上に絶縁体を介して島状導体17が配置されるようにしても構わない。   Furthermore, in the third and fifth examples of the above-described embodiment, the island-like conductor 17 is arranged away from the tube wall 11 in the center of the through hole formed in the tube wall 11 of the waveguide portion 10. For example, the island-shaped conductor 17 may be disposed on the tube wall 11 of the waveguide portion 10 via an insulator.

さらにまた、前述した実施の形態の第２，第４および第５の例においては、導波管部10の両側面の管壁が一対の側壁用貫通導体群11ｃ，11ｃのみで構成された例を示したが、上側主導体層11ａおよび下側主導体層11ｂに平行に形成され、一対の側壁用貫通導体群11ｃ，11ｃのそれぞれを電気的に接続する一対の側壁用副導体層が、上側主導体層11ａおよび下側主導体層11ｂの間に配置され、この一対の側壁用副導体層および一対の側壁用貫通導体群11ｃ，11ｃによって、導波管部10の両側面の管壁が格子状に形成されるようにしても構わない。これにより、導波管部10の両側面からの高周波信号の漏洩をより確実に防止することができる。   Furthermore, in the second, fourth, and fifth examples of the above-described embodiment, the tube walls on both side surfaces of the waveguide portion 10 are configured by only a pair of side wall through conductor groups 11c, 11c. However, a pair of side wall sub-conductor layers that are formed in parallel to the upper main conductor layer 11a and the lower main conductor layer 11b and electrically connect each of the pair of side wall through conductor groups 11c, 11c, Tube walls on both side surfaces of the waveguide section 10 are disposed between the upper main conductor layer 11a and the lower main conductor layer 11b, and the pair of side wall sub conductor layers and the pair of side wall through conductor groups 11c and 11c. May be formed in a lattice shape. As a result, leakage of high-frequency signals from both side surfaces of the waveguide portion 10 can be prevented more reliably.

次に、本発明の高周波回路と導波管部との接続構造の具体例について説明する。   Next, a specific example of the connection structure between the high-frequency circuit and the waveguide portion of the present invention will be described.

図７〜図９に示した実施の形態の第４の例および図10〜図12に示した実施の形態の第５の例の高周波回路と導波管部との接続構造における電気特性を電磁場解析によるシミュレーションによって算出した。算出条件としては、高周波部品30を比誘電率が9.5で厚みが0.1ｍｍの誘電体とし、高周波信号端子31は高周波部品30の上面に配置された一辺が0.1ｍｍの正方形状とした。導波管部10を構成する積層型導波管線路の他方端部をポート２とした。誘電体層15の比誘電率および厚みをそれぞれ9.4および0.45ｍｍとした。上側主導体層11ａおよび下側主導体層11ｂの厚みはそれぞれ0.1ｍｍとした。一対の側壁用貫通導体群11ｃ，11ｃおよび端面用貫通導体群11ｄは、それぞれ直径0.1ｍｍのヴィアホールが0.3ｍｍのピッチで配列される構成にした。一対の側壁用貫通導体群11ｃ，11ｃ同士の間隔は1.15ｍｍとした。   The electrical characteristics in the connection structure between the high-frequency circuit and the waveguide portion of the fourth example of the embodiment shown in FIGS. 7 to 9 and the fifth example of the embodiment shown in FIGS. It was calculated by simulation by analysis. As calculation conditions, the high-frequency component 30 was a dielectric having a relative permittivity of 9.5 and a thickness of 0.1 mm, and the high-frequency signal terminal 31 was formed in a square shape with a side of 0.1 mm arranged on the upper surface of the high-frequency component 30. The other end of the laminated waveguide constituting the waveguide unit 10 is a port 2. The relative dielectric constant and thickness of the dielectric layer 15 were 9.4 and 0.45 mm, respectively. The thicknesses of the upper main conductor layer 11a and the lower main conductor layer 11b were each 0.1 mm. Each of the pair of side wall through conductor groups 11c and 11c and the end surface through conductor group 11d is configured such that via holes having a diameter of 0.1 mm are arranged at a pitch of 0.3 mm. The distance between the pair of side wall through conductor groups 11c, 11c was 1.15 mm.

図７〜図９に示した実施の形態の第４の例の高周波回路と導波管部との接続構造においては、スロット20は幅が0.09ｍｍで長さが0.82ｍｍの矩形状とし、端面用貫通導体群11ｄによって構成される管壁11の厚み方向の中央から0.57ｍｍの距離にスロット20の幅方向の中心が位置するようにした。導線40の長さを1.08ｍｍとし、導線40の他方端から上側主導体層11ａまでの距離を0.05ｍｍとした。   In the connection structure between the high-frequency circuit and the waveguide portion of the fourth example of the embodiment shown in FIGS. 7 to 9, the slot 20 has a rectangular shape with a width of 0.09 mm and a length of 0.82 mm. The center in the width direction of the slot 20 is located at a distance of 0.57 mm from the center in the thickness direction of the tube wall 11 constituted by the through-conductor group 11d for use. The length of the conducting wire 40 was 1.08 mm, and the distance from the other end of the conducting wire 40 to the upper main conductor layer 11a was 0.05 mm.

図10〜図12に示した実施の形態の第５の例の高周波回路と導波管部との接続構造においては、スロット20は幅が0.1ｍｍで長さが0.85ｍｍの矩形状とし、端面用貫通導体群11ｄによって構成される管壁11の厚み方向の中央から0.52ｍｍの距離にスロット20の幅方向の中央が位置するようにした。島状導体17は直径が0.12ｍｍの円形状とし、上側主導体層11ａに形成された直径が0.22ｍｍの貫通孔の中央に位置するようにした。また、スロット20の幅方向の中央から島状導体17の中央までの距離を0.19ｍｍとした。導線40の長さを0.93ｍｍとした。   In the connection structure between the high-frequency circuit and the waveguide portion of the fifth example of the embodiment shown in FIGS. 10 to 12, the slot 20 has a rectangular shape with a width of 0.1 mm and a length of 0.85 mm. The center in the width direction of the slot 20 is located at a distance of 0.52 mm from the center in the thickness direction of the tube wall 11 constituted by the through-conductor group 11d for use. The island-shaped conductor 17 was formed into a circular shape having a diameter of 0.12 mm, and was positioned at the center of the through hole having a diameter of 0.22 mm formed in the upper main conductor layer 11a. Further, the distance from the center in the width direction of the slot 20 to the center of the island-shaped conductor 17 was set to 0.19 mm. The length of the conducting wire 40 was 0.93 mm.

そして、高周波信号端子31をポート１とし、導波管部10の長さ方向における他方端をポート２として、電気特性として通過特性（Ｓ12）および反射特性（Ｓ11，Ｓ22）を算出した。図13は図７〜図９に示した実施の形態の第４の例の高周波回路と導波管部との接続構造における電気特性のシミュレーション結果を示すグラフであり、図14は図10〜図12に示した実施の形態の第５の例の高周波回路と導波管部との接続構造における電気特性のシミュレーション結果を示すグラフである。それぞれのグラフにおいて、横軸は周波数を表し、縦軸は減衰量を表している。   Then, with the high frequency signal terminal 31 as the port 1 and the other end in the length direction of the waveguide portion 10 as the port 2, the transmission characteristics (S12) and the reflection characteristics (S11, S22) were calculated as electrical characteristics. FIG. 13 is a graph showing simulation results of electrical characteristics in the connection structure between the high-frequency circuit and the waveguide portion of the fourth example of the embodiment shown in FIGS. 7 to 9, and FIG. 12 is a graph showing a simulation result of electrical characteristics in the connection structure between the high-frequency circuit and the waveguide portion in the fifth example of the embodiment shown in FIG. In each graph, the horizontal axis represents frequency and the vertical axis represents attenuation.

図13に示すグラフによれば、77ＧＨｚ付近において、Ｓ11，Ｓ22ともに−30ｄＢを超えてインピーダンスが良好に整合しており、かつ伝送損失も少ない良好な接続特性が得られていることがわかる。図14に示すグラフによれば、76.5ＧＨｚ付近において、Ｓ11は−20ｄＢを超えるとともにＳ22は−30ｄＢ近くに達してインピーダンスが良好に整合しており、かつ伝送損失も少ない良好な接続特性が得られていることがわかる。これにより本発明の有効性が確認できた。   According to the graph shown in FIG. 13, it can be seen that, in the vicinity of 77 GHz, both S11 and S22 exceed -30 dB and the impedance is well matched and good connection characteristics with little transmission loss are obtained. According to the graph shown in FIG. 14, in the vicinity of 76.5 GHz, S11 exceeds -20 dB, S22 reaches -30 dB, impedance is well matched, and good connection characteristics with little transmission loss are obtained. You can see that This confirmed the effectiveness of the present invention.

本発明の高周波回路と導波管部との接続構造の実施の形態の第１の例を模式的に示す斜視図である。It is a perspective view which shows typically the 1st example of embodiment of the connection structure of the high frequency circuit of this invention, and a waveguide part. 図１に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。It is a longitudinal cross-sectional view which shows typically the example of the connection structure of the high frequency circuit and waveguide part shown in FIG. 本発明の高周波回路と導波管部との接続構造の実施の形態の第２の例を模式的に示す斜視図である。It is a perspective view which shows typically the 2nd example of embodiment of the connection structure of the high frequency circuit of this invention, and a waveguide part. 図３に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。It is a longitudinal cross-sectional view which shows typically the example of the connection structure of the high frequency circuit and waveguide part shown in FIG. 本発明の高周波回路と導波管部との接続構造の実施の形態の第３の例を模式的に示す斜視図である。It is a perspective view which shows typically the 3rd example of embodiment of the connection structure of the high frequency circuit of this invention, and a waveguide part. 図５に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。It is a longitudinal cross-sectional view which shows typically the example of the connection structure of the high frequency circuit and waveguide part shown in FIG. 本発明の高周波回路と導波管部との接続構造の実施の形態の第４の例を模式的に示す斜視図である。It is a perspective view which shows typically the 4th example of embodiment of the connection structure of the high frequency circuit of this invention, and a waveguide part. 図７に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。It is a longitudinal cross-sectional view which shows typically the example of the connection structure of the high frequency circuit and waveguide part shown in FIG. 図７に示す高周波回路と導波管部との接続構造の例を模式的に示す平面図である。It is a top view which shows typically the example of the connection structure of the high frequency circuit and waveguide part shown in FIG. 本発明の高周波回路と導波管部との接続構造の実施の形態の第５の例を模式的に示す斜視図である。It is a perspective view which shows typically the 5th example of embodiment of the connection structure of the high frequency circuit of this invention, and a waveguide part. 図１０に示す高周波回路と導波管部との接続構造の例を模式的に示す縦断面図である。It is a longitudinal cross-sectional view which shows typically the example of the connection structure of the high frequency circuit and waveguide part shown in FIG. 図１０に示す高周波回路と導波管部との接続構造の例を模式的に示す平面図である。It is a top view which shows typically the example of the connection structure of the high frequency circuit and waveguide part shown in FIG. 本発明の高周波回路と導波管部との接続構造の実施の形態の第４の例の電気特性のシミュレーション結果を示すグラフである。It is a graph which shows the simulation result of the electrical property of the 4th example of an embodiment of a connection structure of a high frequency circuit and a waveguide part of the present invention. 本発明の高周波回路と導波管部との接続構造の実施の形態の第５の例の電気特性のシミュレーション結果を示すグラフである。It is a graph which shows the simulation result of the electrical property of the 5th example of an embodiment of a connection structure of a high frequency circuit and a waveguide part of the present invention.

符号の説明Explanation of symbols

10：導波管部
11：管壁
11ａ：上側主導体層
11ｂ：下側主導体層
11ｃ：側壁用貫通導体群
13：誘電体
15：誘電体層
20：スロット
31：高周波信号端子
40：導線 10: Waveguide section
11: Pipe wall
11a: Upper main conductor layer
11b: Lower main conductor layer
11c: Side wall through conductor group
13: Dielectric
15: Dielectric layer
20: Slot
31: High frequency signal terminal
40: Conductor

Claims (4)

高周波信号を送信および受信可能なアンテナとして機能するスロットを管壁に有する導波管部と、
前記スロットに隣接して配置された前記高周波信号の入力および出力の少なくとも一方のための高周波信号端子を有する高周波回路とを、
一方端が前記高周波信号端子に接続され、他方端が前記管壁と絶縁されて非接地端とされるとともに、電気長が前記高周波信号の波長の（２ｎ−１）／４倍（ｎは自然数）とされて前記高周波信号を送信および受信可能なアンテナとして機能する導線を前記スロット上を横断するように配置して電磁気的に接続したことを特徴とする高周波回路と導波管部との接続構造。 A waveguide section having a slot in the tube wall that functions as an antenna capable of transmitting and receiving a high-frequency signal;
A high frequency circuit having a high frequency signal terminal for at least one of input and output of the high frequency signal disposed adjacent to the slot;
One end is connected to the high-frequency signal terminal , the other end is insulated from the tube wall to be an ungrounded end, and the electrical length is (2n-1) / 4 times the wavelength of the high-frequency signal (n is a natural number) And connecting the high-frequency circuit and the waveguide section to each other in such a manner that a conductive wire functioning as an antenna capable of transmitting and receiving the high-frequency signal is disposed across the slot and electromagnetically connected. Construction. 前記スロットの長さは該スロットにおける前記高周波信号の波長のｎ／２倍（ｎは自然数）であることを特徴とする請求項１に記載の高周波回路と導波管部との接続構造。 2. The connection structure between a high frequency circuit and a waveguide unit according to claim 1, wherein the length of the slot is n / 2 times the wavelength of the high frequency signal in the slot (n is a natural number). 前記導波管部は中空導波管の内部に誘電体が充填された構造であることを特徴とする請求項１または請求項２に記載の高周波回路と導波管部との接続構造。 3. The connection structure between a high-frequency circuit and a waveguide part according to claim 1, wherein the waveguide part has a structure in which a dielectric is filled in a hollow waveguide. 前記導波管部が、誘電体層の上面に配置されて上側の前記管壁となる上側主導体層と、前記誘電体層の下面に配置されて下側の前記管壁となる下側主導体層と、前記高周波信号の伝送方向に前記高周波信号の波長の１／２未満の繰り返し間隔で、かつ前記伝送方向と直交する方向に所定の間隔をあけて、前記上側主導体層および前記下側主導体層の間を電気的に接続するように配置された２列の側壁用貫通導体群とを具備して成り、前記上側主導体層，前記下側主導体層および前記２列の側壁用貫通導体群で囲まれた領域によって高周波信号を伝送する積層型導波管線路であることを特徴とする請求項１または請求項２に記載の高周波回路と導波管部との接続構造。 The waveguide section is disposed on the upper surface of the dielectric layer and is the upper main conductor layer serving as the upper tube wall; and the lower lead is disposed on the lower surface of the dielectric layer and serves as the lower tube wall. The upper main conductor layer and the lower body layer with a predetermined interval in the direction perpendicular to the transmission direction and a repetition interval of less than half the wavelength of the high frequency signal in the transmission direction of the high frequency signal. Two side wall through conductor groups arranged so as to electrically connect the side main conductor layers, the upper main conductor layer, the lower main conductor layer, and the two rows of side walls. 3. The connection structure between a high-frequency circuit and a waveguide part according to claim 1 , wherein the connection structure is a laminated waveguide line that transmits a high-frequency signal by a region surrounded by a through conductor group for use.
JP2008167406A 2008-06-26 2008-06-26 Connection structure between high-frequency circuit and waveguide section Expired - Fee Related JP4954151B2 (en)

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