JP4949966B2 - 有機発光表示装置 - Google Patents
有機発光表示装置 Download PDFInfo
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- JP4949966B2 JP4949966B2 JP2007210180A JP2007210180A JP4949966B2 JP 4949966 B2 JP4949966 B2 JP 4949966B2 JP 2007210180 A JP2007210180 A JP 2007210180A JP 2007210180 A JP2007210180 A JP 2007210180A JP 4949966 B2 JP4949966 B2 JP 4949966B2
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- light emitting
- organic light
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- 239000000758 substrate Substances 0.000 claims description 143
- 229910052751 metal Inorganic materials 0.000 claims description 86
- 239000002184 metal Substances 0.000 claims description 86
- 239000012780 transparent material Substances 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 230000010287 polarization Effects 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010549 co-Evaporation Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 426
- 239000010408 film Substances 0.000 description 90
- 238000007789 sealing Methods 0.000 description 73
- 239000003989 dielectric material Substances 0.000 description 49
- 230000000694 effects Effects 0.000 description 32
- 239000010409 thin film Substances 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 18
- 239000011368 organic material Substances 0.000 description 16
- 238000013459 approach Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- 239000011241 protective layer Substances 0.000 description 14
- 229910010272 inorganic material Inorganic materials 0.000 description 13
- 239000011147 inorganic material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 229920000620 organic polymer Polymers 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 2
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910003070 TaOx Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229920001795 coordination polymer Polymers 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000009975 flexible effect Effects 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229920000592 inorganic polymer Polymers 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Polarising Elements (AREA)
Description
11,110 ベース
12,13,120 グリッド
12a,13a,120a 第1成分
12b,13b,120b 第2成分
20,200 基板
21,210 1/4波長位相差層
22,220 線形偏光層
30,300 有機発光素子
31,310 第1電極
32,320 有機発光層
33,330 第2電極
34,340 反射膜
35,350 内部絶縁膜
36,360 セパレータ
40,400 保護層
41,410 バッファ層
42,420 半導体層
43,430 ゲート絶縁膜
44,440 ゲート電極
45,450 層間絶縁膜
46,460 ソース電極
47,470 ドレイン電極
48,480 パッシべーション膜
49,490 画素定義膜
50,500 密封部材
Claims (3)
- 基板と、
画像を具現する有機発光素子と、
1/4波長位相差層と、
前記1/4波長位相差層より前記画像が具現される方向に近く位置する線形偏光層と、を備え、
前記線形偏光層は、第1成分及び第2成分を備える複数のグリッドを備え、前記第1成分及び前記第2成分は、前記グリッドの厚さ方向の全域にわたって、該方向に漸進的に増加又は減少する濃度勾配を有し、前記第1成分は、絶縁透明物質又は導電性透明物質を含み、前記第2成分は、金属を含み、前記第1成分は、SiOx(x≧1),SiNx(x≧1),MgF2,CaF2,Al2O3,SnO2,ITO,IZO,ZnO及びIn2O3からなる群から選択されたいずれか一つを含み、前記グリッドは、前記第1成分及び前記第2成分の共蒸着により形成されたことを特徴とする有機発光表示装置。 - 前記第2成分は、Fe,Co,V,Ti,Al,Ag,Si,Cr,Mo,Ge,Y,Zn,Zr,W,Ta,Cu及びPtからなる群から選択されたいずれか一つを含むことを特徴とする請求項1に記載の有機発光表示装置。
- 前記グリッドは、所定の間隔で離隔されてストライプ状にパターニングされたことを特徴とする請求項1に記載の有機発光表示装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0021159 | 2007-03-02 | ||
KR1020070021159A KR100829756B1 (ko) | 2007-03-02 | 2007-03-02 | 편광자 및 그를 포함하는 유기 발광 표시 장치 |
KR10-2007-0024191 | 2007-03-12 | ||
KR1020070024191A KR100863908B1 (ko) | 2007-03-12 | 2007-03-12 | 편광자 및 그를 포함하는 평판 표시 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008216964A JP2008216964A (ja) | 2008-09-18 |
JP4949966B2 true JP4949966B2 (ja) | 2012-06-13 |
Family
ID=39469405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007210180A Active JP4949966B2 (ja) | 2007-03-02 | 2007-08-10 | 有機発光表示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7772768B2 (ja) |
EP (1) | EP1965233B1 (ja) |
JP (1) | JP4949966B2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008164680A (ja) * | 2006-12-27 | 2008-07-17 | Canon Inc | 光学波長板及び該波長板の製造方法 |
US8373928B2 (en) * | 2007-04-19 | 2013-02-12 | Samsung Display Co., Ltd. | Polarizer and organic light emitting display apparatus comprising the polarizer |
KR100927587B1 (ko) * | 2008-04-30 | 2009-11-23 | 삼성모바일디스플레이주식회사 | 액정 표시 장치 |
KR20130000218A (ko) * | 2011-06-22 | 2013-01-02 | 삼성디스플레이 주식회사 | 자성체 물질을 함유한 전극 및 상기 전극을 갖는 유기발광소자 |
KR101861737B1 (ko) | 2011-11-17 | 2018-05-29 | 삼성디스플레이 주식회사 | 광학 유닛 및 이를 포함하는 표시 장치 |
JP5938241B2 (ja) * | 2012-03-15 | 2016-06-22 | 日立マクセル株式会社 | 光学素子およびその製造方法 |
KR101979233B1 (ko) * | 2012-07-27 | 2019-05-17 | 삼성디스플레이 주식회사 | 와이어 그리드 편광 구조물, 와이어 그리드 편광 구조물의 제조 방법 및 와이어 그리드 편광 구조물을 포함하는 유기 발광 표시 장치 |
US9599869B2 (en) | 2013-01-23 | 2017-03-21 | Samsung Display Co., Ltd. | Display apparatus |
KR102038693B1 (ko) | 2013-04-15 | 2019-10-31 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102151205B1 (ko) * | 2013-05-21 | 2020-09-03 | 삼성디스플레이 주식회사 | 표시 장치 |
KR102080131B1 (ko) * | 2013-06-17 | 2020-04-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20150061967A (ko) * | 2013-11-28 | 2015-06-05 | 삼성디스플레이 주식회사 | 표시장치 |
KR102234571B1 (ko) * | 2013-12-13 | 2021-03-30 | 엘지디스플레이 주식회사 | 표시장치 및 그 제조방법 |
KR102574641B1 (ko) * | 2016-07-19 | 2023-09-06 | 삼성디스플레이 주식회사 | 표시 장치 |
JP6836360B2 (ja) * | 2016-09-06 | 2021-03-03 | デクセリアルズ株式会社 | 無機偏光板及びその製造方法 |
JP6312917B1 (ja) | 2017-02-07 | 2018-04-18 | デクセリアルズ株式会社 | 無機偏光板及びその製造方法、並びに光学機器 |
JP7063452B2 (ja) * | 2017-12-28 | 2022-05-09 | 株式会社ホタルクス | 有機el素子 |
JP6642622B2 (ja) | 2018-05-23 | 2020-02-05 | セイコーエプソン株式会社 | ワイヤーグリッド偏光素子、液晶装置、および電子機器 |
JP7332324B2 (ja) * | 2019-04-10 | 2023-08-23 | デクセリアルズ株式会社 | 無機偏光板及びその製造方法、並びに光学機器 |
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US6122103A (en) | 1999-06-22 | 2000-09-19 | Moxtech | Broadband wire grid polarizer for the visible spectrum |
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JP2003058069A (ja) | 2001-08-21 | 2003-02-28 | Sharp Corp | 自発光型画像表示装置 |
JP2003108019A (ja) | 2001-10-01 | 2003-04-11 | Sharp Corp | 自発光型画像表示装置 |
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KR100565742B1 (ko) | 2003-12-31 | 2006-03-29 | 엘지.필립스 엘시디 주식회사 | 유기전계발광소자 |
JP2006178186A (ja) | 2004-12-22 | 2006-07-06 | Seiko Epson Corp | 偏光制御素子、偏光制御素子の製造方法、偏光制御素子の設計方法、電子機器 |
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JP4762804B2 (ja) * | 2006-06-28 | 2011-08-31 | チェイル インダストリーズ インコーポレイテッド | 偏光分離素子およびその製造方法 |
KR100838066B1 (ko) | 2006-07-14 | 2008-06-16 | 삼성에스디아이 주식회사 | 유기 발광 장치 |
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- 2007-08-10 JP JP2007210180A patent/JP4949966B2/ja active Active
- 2007-08-10 US US11/837,451 patent/US7772768B2/en active Active
- 2007-08-10 EP EP07253133.8A patent/EP1965233B1/en active Active
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US7772768B2 (en) | 2010-08-10 |
EP1965233A1 (en) | 2008-09-03 |
EP1965233B1 (en) | 2015-09-16 |
US20080225389A1 (en) | 2008-09-18 |
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