JP4949159B2 - Circuit board, package using the same, and electronic device - Google Patents

Circuit board, package using the same, and electronic device Download PDF

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JP4949159B2
JP4949159B2 JP2007196217A JP2007196217A JP4949159B2 JP 4949159 B2 JP4949159 B2 JP 4949159B2 JP 2007196217 A JP2007196217 A JP 2007196217A JP 2007196217 A JP2007196217 A JP 2007196217A JP 4949159 B2 JP4949159 B2 JP 4949159B2
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substrate
circuit board
frame
heat radiating
radiating member
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JP2009032959A (en
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義明 植田
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

本発明は、回路基板及びにこれを用いたパッケージ並びに電子装置に関する。   The present invention relates to a circuit board, a package using the circuit board, and an electronic device.

近年、電力、鉄道車両、産業機器や家電製品のインバータ部分やコンバータに用いられているスイッチングデバイスとして、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）等のパワーモジュールが幅広く使用されている。これらパワーモジュールは、その内部搭載される半導体素子を比較的安価な樹脂によってモールドしたものが一般的であった。   In recent years, power modules such as IGBTs (Insulated Gate Bipolar Transistors) have been widely used as switching devices used in inverters and converters of electric power, railway vehicles, industrial equipment, and home appliances. These power modules are generally obtained by molding a semiconductor element mounted therein with a relatively inexpensive resin.

また、このようなパワーモジュールは大電流が流れることから、絶縁性セラミック基板の下面の全面にヒートシンクを設けることが開示されている（例えば特許文献１参照）。
特開２００１−２８４５２５号公報 In addition, since a large current flows in such a power module, it is disclosed that a heat sink is provided on the entire lower surface of the insulating ceramic substrate (see, for example, Patent Document 1).
JP 2001-284525 A

しかしながら、特許文献１に記載の技術は、図６に示すように、半導体チップ１０５が搭載される絶縁性セラミック基板１０１の下方にも放熱部材１０４が設けられていることから、絶縁性セラミック基板１０１とその下方に位置する放熱部材１０４との熱膨張係数差から絶縁性セラミック基板１０１に加わる引っ張り応力を緩和することは困難であった。   However, as shown in FIG. 6, the technique disclosed in Patent Document 1 includes the heat dissipating member 104 below the insulating ceramic substrate 101 on which the semiconductor chip 105 is mounted. It is difficult to relieve the tensile stress applied to the insulating ceramic substrate 101 from the difference in thermal expansion coefficient between the heat dissipation member 104 and the heat dissipating member 104 located therebelow.

本発明は、上記課題に鑑みなされたものであり、基板と放熱部材との熱膨張係数差から、基板に加わる引っ張り応力を緩和した回路基板及びパッケージ並びに電子装置を提供することを目的とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a circuit board, a package, and an electronic device in which a tensile stress applied to the board is relieved from a difference in thermal expansion coefficient between the board and the heat dissipation member.

上記の課題を解決するために、請求項１に記載の回路基板は、配線導体を有する基板と、前記基板を平面視して、前記基板の一主面に設けられた枠体と、前記基板の他主面における前記枠体に囲まれた領域に設けられ、前記枠体よりも熱膨張係数の大きい第１の放熱部材と、前記基板の他主面における前記枠体の直下に位置する領域に設けられ、前記枠体よりも熱膨張係数の大きい第２の放熱部材と、前記基板の他主面に設けられ、前記枠体よりも熱膨張係数の大きい放熱部材と、を備え、前記第２の放熱部材の厚みが、前記第１の放熱部材の厚みよりも薄いことを特徴とするものである。
In order to solve the above-described problem, a circuit board according to claim 1 includes a board having a wiring conductor, a frame body provided on one main surface of the board in plan view, and the board. the other main surface provided in a region surrounded by the frame in a first heat radiating member having a large coefficient of thermal expansion than the frame body, a region located immediately below the frame in the other main surface of the substrate provided, the larger the second heat radiation member of the thermal expansion coefficient than the frame body, provided in the other main surface of the substrate, and a large heat radiation member of the thermal expansion coefficient than the frame body, the first The thickness of the heat radiating member 2 is smaller than the thickness of the first heat radiating member.

請求項１に記載の発明によれば、回路基板が冷却され、例えば放熱部材の熱収縮に起因して基板に引っ張り応力が加わった場合であっても、枠体の直下に位置する第２の放熱部材の厚みを、基板の他主面における枠体に囲まれた領域に設けられた第１の放熱部材の厚みよりも薄くしたことから、基板の他主面のうち、枠体の直下に位置する領域では、上記引っ張り応力を抑制できるため、枠体が基板から剥離することを抑制できる。
According to the first aspect of the present invention, even if the circuit board is cooled and, for example, a tensile stress is applied to the board due to thermal contraction of the heat dissipation member, the second board is located immediately below the frame . Since the thickness of the heat dissipating member is made thinner than the thickness of the first heat dissipating member provided in the region surrounded by the frame on the other main surface of the substrate, the thickness of the heat dissipating member is directly below the frame on the other main surface of the substrate. In the area | region located, since the said tensile stress can be suppressed, it can suppress that a frame peels from a board | substrate.

本発明の回路基板及びこれを用いたパッケージ並びに電子装置について、以下に詳細に説明する。   The circuit board of the present invention, a package using the circuit board, and an electronic device will be described in detail below.

図１は本発明の回路基板の一例を示す斜視図である。また、図２（ａ）、図２（ｂ）は図１のＸ−Ｘ’線における断面概略図である。   FIG. 1 is a perspective view showing an example of a circuit board of the present invention. 2A and 2B are schematic cross-sectional views taken along the line X-X 'of FIG.

図中、１は基板、２は配線導体、３は枠体、４は放熱部材、５は電子素子、７はリード端子、９はワイヤー、５０は回路基板である。   In the figure, 1 is a substrate, 2 is a wiring conductor, 3 is a frame, 4 is a heat radiating member, 5 is an electronic element, 7 is a lead terminal, 9 is a wire, and 50 is a circuit board.

例えば、このような回路基板５０の枠体３上に蓋部材を備えることによりパッケージとすることができる。また、このパッケージ内部に配線導体と電気的に接続してなる電子素子を備えることで電子装置９０とすることができる。なお、図面に施したクロスハッチング線は、金属の層が形成されている部分であることを示し、その領域が断面領域を示すものではない。   For example, it can be set as a package by providing a cover member on the frame 3 of such a circuit board 50. Moreover, the electronic device 90 can be obtained by providing an electronic element electrically connected to the wiring conductor in the package. In addition, the cross hatching line given to drawing shows that it is a part in which the metal layer is formed, and the area | region does not show a cross-sectional area | region.

＜回路基板＞
基板１は、放熱性の観点から比較的高い熱伝導率を有しているＡｌＮ（窒化アルミニウム）基板やＳｉＣ（窒化ケイ素）基板などのセラミックスの基板１を用いることが好ましい。配線導体２は、例えば銅箔等の導電性材料がセラミックの基板１上にパターニングされている。 <Circuit board>
The substrate 1 is preferably a ceramic substrate 1 such as an AlN (aluminum nitride) substrate or a SiC (silicon nitride) substrate having a relatively high thermal conductivity from the viewpoint of heat dissipation. For the wiring conductor 2, for example, a conductive material such as copper foil is patterned on the ceramic substrate 1.

配線導体２と基板１との接合は、基板１の一主面にメタライズ層を形成し、このメタライズ層と配線導体２とを従来周知のＡｇ（銀）−Ｃｕ（銅）ロウ材等を用いて接合してもよいし、活性金属ロウ材を用いて接合してもよい。特に、Ｔｉ（チタン）を含有する活性金属ロウ材を用いた場合には、セラミックスの基板１と配線導体２との接合界面に、Ｔｉ（チタン）とセラミックスとの化合物を生じるため、該化合物によってセラミックスの基板１と配線導体２との接合信頼性を高めることができる。   The wiring conductor 2 and the substrate 1 are joined by forming a metallized layer on one main surface of the substrate 1 and using a conventionally known Ag (silver) -Cu (copper) brazing material or the like for the metallized layer and the wiring conductor 2. Or may be joined using an active metal brazing material. In particular, when an active metal brazing material containing Ti (titanium) is used, a compound of Ti (titanium) and ceramic is produced at the bonding interface between the ceramic substrate 1 and the wiring conductor 2. The bonding reliability between the ceramic substrate 1 and the wiring conductor 2 can be improved.

枠体３は、基板１の一主面を平面視して、例えば配線導体２を囲うようにして設けられるものである。枠体３は、枠体３の取り付け安定性の観点から基板１の外周よりも内側に位置するように設けることが好ましい。枠体３と基板１との接合は、基板１の一主面にメタライズ層を形成し、このメタライズ層と枠体３とを従来周知のＡｇ（銀）−Ｃｕ（銅）ロウ材を用いて接合してもよいし、活性金属ロウ材を用いて接合してもよい。特にＴｉ（チタン）を含有する活性金属ロウ材を用いた場合には、上述した理由によって基板１と枠体３との接合信頼性を高めることができる。   The frame 3 is provided so as to surround, for example, the wiring conductor 2 in plan view of one main surface of the substrate 1. The frame body 3 is preferably provided so as to be located inside the outer periphery of the substrate 1 from the viewpoint of the attachment stability of the frame body 3. The frame 3 and the substrate 1 are joined by forming a metallized layer on one main surface of the substrate 1 and using a conventionally known Ag (silver) -Cu (copper) brazing material for the metallized layer and the frame 3. It may be joined or may be joined using an active metal brazing material. In particular, when an active metal brazing material containing Ti (titanium) is used, the bonding reliability between the substrate 1 and the frame body 3 can be increased for the reasons described above.

また、枠体３は金属からなるとともに基板１上に接合材を介して設ければ、枠体３とこの枠体３上の金属部材１１とをシーム溶接により接合することができる。特に、枠体３をＦｅ（鉄）−Ｎｉ（ニッケル）系の高抵抗の金属とすれば、枠体３と金属部材１１とのシーム溶接を好適に行なうことができる。   If the frame 3 is made of metal and provided on the substrate 1 via a bonding material, the frame 3 and the metal member 11 on the frame 3 can be bonded by seam welding. In particular, if the frame 3 is made of an Fe (iron) -Ni (nickel) -based high-resistance metal, seam welding between the frame 3 and the metal member 11 can be suitably performed.

金属部材１１は、Ｆｅ（鉄）−Ｎｉ（ニッケル）−Ｃｏ（コバルト）合金やＦｅ（鉄）−Ｎｉ（ニッケル）合金等からなる。なお、この金属部材１１をシールリング８として後述する蓋部材１０で封止してもよい。   The metal member 11 is made of an Fe (iron) -Ni (nickel) -Co (cobalt) alloy, an Fe (iron) -Ni (nickel) alloy, or the like. The metal member 11 may be sealed as a seal ring 8 with a lid member 10 described later.

枠体３と金属部材１１とをシーム溶接することで、枠体３付近を局所的に熱処理することが可能となるため、回路基板５０に過剰な熱量が加わることを抑制できる。さらに、シーム溶接を行なう際に枠体３を伝わる熱は、Ａｇ（銀）−Ｃｕ（銅）ロウ材や活性金属ロウ材等の接合材にも伝わり、接合材は軟化する。加えて、図４に示すように、金属部材１１から枠体３に向かって加圧するため、接合材と枠体３及び基板１との接着面積が増加し、枠体３と基板１との固定をさらに強固なものとすることができる。   By seam welding the frame 3 and the metal member 11, the vicinity of the frame 3 can be locally heat-treated, so that it is possible to suppress an excessive amount of heat from being applied to the circuit board 50. Furthermore, the heat transmitted through the frame 3 when performing seam welding is also transmitted to a bonding material such as an Ag (silver) -Cu (copper) brazing material or an active metal brazing material, and the bonding material is softened. In addition, as shown in FIG. 4, since pressure is applied from the metal member 11 toward the frame 3, the bonding area between the bonding material, the frame 3, and the substrate 1 increases, and the frame 3 and the substrate 1 are fixed. Can be further strengthened.

また、シーム溶接をすることで、配線部材２と基板１、若しくは、後述する放熱部材４と基板１との接合面に介在するロウ材や半田等の接合材が再溶融することを抑制できるため、基板１と配線部材２、若しくは基板１と放熱部材４との位置ずれを抑制できる。その結果、基板１上で上述した引っ張り応力が加わる部位が変化しにくくなるため、より一層枠体３が基板１から剥離しにくくなる。   In addition, by performing seam welding, it is possible to suppress remelting of a bonding material such as a brazing material or solder that intervenes on a bonding surface between the wiring member 2 and the substrate 1 or a heat dissipation member 4 and the substrate 1 described later. The positional deviation between the substrate 1 and the wiring member 2 or between the substrate 1 and the heat dissipation member 4 can be suppressed. As a result, the portion to which the above-described tensile stress is applied on the substrate 1 is less likely to change, so that the frame body 3 becomes even more difficult to peel from the substrate 1.

放熱部材４は、基板１の他主面に設けられ、枠体３よりも熱膨張係数の大きいものである。放熱部材４は、放熱性の観点から比較的高い熱伝導率を有しているアルミニウムや銅などの金属からなることが好ましい。放熱部材４と基板１との接合は、基板１の他主面にメタライズ層を形成し、このメタライズ層と放熱部材４とを従来周知のＡｇ（銀）−Ｃｕ（銅）ロウ材を用いて接合してもよいし、活性金属ロウ材を用いて放熱部材４と基板１とを接合してもよい。特にＴｉ（チタン）を含有する活性金属ロウ材を用いた場合には、上述した理由によって基板１と放熱部材４との接合信頼性を高めることができる。   The heat radiating member 4 is provided on the other main surface of the substrate 1 and has a thermal expansion coefficient larger than that of the frame 3. The heat radiating member 4 is preferably made of a metal such as aluminum or copper having a relatively high thermal conductivity from the viewpoint of heat dissipation. The heat radiating member 4 and the substrate 1 are joined by forming a metallized layer on the other main surface of the substrate 1 and using a conventionally known Ag (silver) -Cu (copper) brazing material for the metallized layer and the heat radiating member 4. The heat radiating member 4 and the substrate 1 may be bonded using an active metal brazing material. In particular, when an active metal brazing material containing Ti (titanium) is used, the bonding reliability between the substrate 1 and the heat radiating member 4 can be increased for the reasons described above.

本発明に係る回路基板５０の一実施形態は、図２（ａ）に示すように、基板１の他主面において、枠体３の直下に位置する放熱部材４の厚みは、その他の部分における放熱部材４の厚みよりも薄いことを特徴とするものである。   In one embodiment of the circuit board 50 according to the present invention, as shown in FIG. 2A, the thickness of the heat radiation member 4 located directly below the frame 3 on the other main surface of the board 1 It is characterized by being thinner than the thickness of the heat dissipating member 4.

かかる構成によれば、回路基板５０が冷却され、放熱部材４の熱収縮に起因して基板１に引っ張り応力が加わった場合であっても、基板１の他主面のうち、枠体３の直下に位置する領域では、上記引っ張り応力を抑制できるため、枠体３が基板１から剥離することを抑制できる。   According to such a configuration, even when the circuit board 50 is cooled and a tensile stress is applied to the board 1 due to the thermal contraction of the heat radiating member 4, among the other main surfaces of the board 1, In the region located immediately below, the tensile stress can be suppressed, so that the frame body 3 can be prevented from peeling from the substrate 1.

ここで、基板１の他主面のうち、枠体３の直下に位置する領域とは、図２（ａ）中、点線で囲った領域である。また、放熱部材４の厚みを測定するためには、研削盤等を用いて図２（ａ）に示すような断面を作製して、放熱部材４の厚みを測定すればよい。   Here, in the other main surface of the substrate 1, the region located immediately below the frame 3 is a region surrounded by a dotted line in FIG. Moreover, in order to measure the thickness of the heat radiating member 4, a cross section as shown in FIG. 2A is prepared using a grinding machine or the like, and the thickness of the heat radiating member 4 is measured.

また、本発明に係る回路基板５０の他の実施形態は、図２（ｂ）に示すように、基板１の他主面のうち、枠体３の直下に位置する領域では、放熱部材４を設けていないことを特徴とするものである。   Further, in another embodiment of the circuit board 50 according to the present invention, as shown in FIG. 2 (b), the heat radiating member 4 is disposed in a region located directly below the frame body 3 on the other main surface of the board 1. It is characterized in that it is not provided.

かかる構成によれば、回路基板５０が冷却され、放熱部材４の熱収縮に起因して基板１に引っ張り応力が加わった場合であっても、枠体３の直下に位置する領域では、放熱部材４を設けていないことから、上記領域では上記引っ張り応力を抑制できるため、枠体３が基板１から剥離することを抑制できる。また、基板１の他主面において放熱部材４が設けられていない箇所を有することから、上記領域を境界部分として、上記引っ張り応力を分散させることができるため、より枠体３が基板１から剥離することを抑制できる。   According to such a configuration, even when the circuit board 50 is cooled and a tensile stress is applied to the substrate 1 due to the thermal contraction of the heat radiating member 4, the heat radiating member is disposed in the region located immediately below the frame 3. Since 4 is not provided, the tensile stress can be suppressed in the region, so that the frame body 3 can be prevented from peeling from the substrate 1. In addition, since the other main surface of the substrate 1 has a portion where the heat radiating member 4 is not provided, the tensile stress can be dispersed using the region as a boundary portion. Can be suppressed.

ここで、基板１の他主面のうち、枠体３の直下に位置する領域とは、図２（ｂ）中、点線で囲った領域である。また、放熱部材４が設けられていない箇所の有無を確認するためには、研削盤等を用いて図２（ｂ）に示すような断面を作製して放熱部材４の有無を確認すればよい。   Here, in the other main surface of the substrate 1, the region located directly below the frame 3 is a region surrounded by a dotted line in FIG. Moreover, in order to confirm the presence or absence of the location where the heat radiating member 4 is not provided, a cross section as shown in FIG. .

なお、枠体３と放熱部材４との熱膨張係数の関係は、以下のようにして測定することが可能である。   In addition, the relationship of the thermal expansion coefficient of the frame 3 and the heat radiating member 4 can be measured as follows.

例えばＥＰＭＡ（Ｅｌｅｃｔｒｏｎ Ｐｒｏｂｅ Ｍｉｃｒｏａｎａｌｙｓｉｓ）による測定が挙げられる。まず回路基板を樹脂でモールドし、所定の断面構造とする。次に、枠体３の部位及び放熱部材４の部位に対して、例えば日本電子製ＪＸＡ−８１００を用いて成分分析を行なえば、測定対象の成分を確認することができる。ここで、測定対象の成分結果が単体である場合は、既知の線膨張率を熱膨張係数とみなせばよい。   For example, measurement by EPMA (Electron Probe Microanalysis) can be mentioned. First, the circuit board is molded with resin to obtain a predetermined cross-sectional structure. Next, if the component analysis is performed on the part of the frame 3 and the part of the heat dissipation member 4 using, for example, JXA-8100 manufactured by JEOL, the component to be measured can be confirmed. Here, when the component result to be measured is a simple substance, a known linear expansion coefficient may be regarded as a thermal expansion coefficient.

また、測定対象の成分結果が合金等の化合物からなる場合は、枠体３及び放熱部材４を各々所定の大きさに切断し、常温から例えばヒーターブロック等で所定の熱量を加えた時の各部材の変位を測定することによって各部材の熱膨張係数の関係を確認することができる。   In addition, when the component result to be measured is made of a compound such as an alloy, the frame 3 and the heat radiating member 4 are each cut to a predetermined size, and each time when a predetermined amount of heat is applied from room temperature, for example, with a heater block or the like. By measuring the displacement of the members, the relationship between the thermal expansion coefficients of the members can be confirmed.

＜パッケージ及び電子装置＞
次に、上述した回路基板５０を用いたパッケージについて説明する。 <Packages and electronic devices>
Next, a package using the circuit board 50 described above will be described.

本発明に係るパッケージは、枠体３上に蓋部材１０を備えてなるものである。   The package according to the present invention includes the lid member 10 on the frame 3.

蓋部材１０は、アルミナ等のセラミックスからなるものでもよいし、Ｆｅ（鉄）−Ｎｉ（ニッケル）合金や、Ｆｅ（鉄）−Ｎｉ（ニッケル）−Ｃｏ（コバルト）合金等の金属からなるものでもよい。   The lid member 10 may be made of a ceramic such as alumina, or may be made of a metal such as an Fe (iron) -Ni (nickel) alloy or an Fe (iron) -Ni (nickel) -Co (cobalt) alloy. Good.

枠体３に蓋部材１０を直接取り付ける場合は、枠体３に貫通孔を設け、当該貫通孔にパッケージの内外を挿通するリード７を備えればよい。   When the lid member 10 is directly attached to the frame 3, a through hole may be provided in the frame 3, and the lead 7 inserted through the inside and outside of the package may be provided in the through hole.

また、図３に示すように枠体３と蓋部材１０との間に枠体３に入出力端子６を設けることにより、パッケージ内外を電気的に接続してもよい。   In addition, as shown in FIG. 3, the input and output terminals 6 may be provided on the frame 3 between the frame 3 and the lid member 10 to electrically connect the inside and outside of the package.

入出力端子６は、例えば長方形の誘電体から成る平板部の上面の一方の長辺から他方の長辺にかけてＷ，Ｍｏ，Ｍｎ等のメタライズ層によって線路導体が形成される。この平板部の短辺方向のほぼ中央部に四角柱状の誘電体から成る立壁部が線路導体を間に挟んで入出力端子６が形成される。線路導体は、例えば、Ｗ，Ｍｏ等の粉末に有機溶剤、溶媒を添加混合して得た金属ペーストを、平板部となるセラミック生成形体の上面に、予め従来周知のスクリーン印刷法により所定パターンに印刷塗布しておき、焼成することにより形成される。この線路導体とリード端子７とが電気的に接続される。平板部および立壁部は、アルミナ（Ａｌ２Ｏ３）質セラミックス，窒化アルミニウム（ＡｌＮ）質セラミックス，ムライト（３Ａｌ２Ｏ３・２ＳｉＯ２）質セラミックス等の誘電体から成り、好ましくは、セラミックグリーンシート積層法によって形成されるのがよい。 In the input / output terminal 6, for example, a line conductor is formed of a metallized layer such as W, Mo, or Mn from one long side to the other long side of the upper surface of a flat plate portion made of a rectangular dielectric. An input / output terminal 6 is formed at a substantially central portion in the short side direction of the flat plate portion with an upright wall portion made of a quadrangular columnar dielectric sandwiching a line conductor therebetween. The line conductor is formed in a predetermined pattern in advance by a conventionally well-known screen printing method on the upper surface of the ceramic generating body to be a flat plate portion, for example, a metal paste obtained by adding and mixing an organic solvent and a solvent to powders such as W and Mo. It is formed by printing and applying and baking. The line conductor and the lead terminal 7 are electrically connected. The flat plate portion and the standing wall portion are made of a dielectric such as alumina (Al 2 O 3 ) ceramics, aluminum nitride (AlN) ceramics, mullite (3Al 2 O 3 · 2SiO 2 ) ceramics, and preferably a ceramic green sheet It may be formed by a lamination method.

なお、図４に示す方法と同様にして入出力端子６と蓋部材１０とをシーム溶接によってシールリング８を介して接合してもよい。このようにすれば、枠体３付近を局所的に熱処理することが可能となるため、回路基板５０に過剰な熱量が加わることを抑制できる。したがって、枠体３の取り付け時だけではなく、蓋部材１０取り付け時にも枠体３が基板１から剥離することを抑制できる。   In addition, you may join the input / output terminal 6 and the cover member 10 through the seal ring 8 by seam welding similarly to the method shown in FIG. In this way, the vicinity of the frame 3 can be locally heat-treated, so that an excessive amount of heat can be suppressed from being applied to the circuit board 50. Therefore, it is possible to suppress the peeling of the frame 3 from the substrate 1 not only when the frame 3 is attached but also when the lid member 10 is attached.

本発明に係るパッケージによれば、例えパッケージが加熱され、その後冷却された場合であっても、基板１と枠体３とが剥離することを抑制できるため、パッケージ内部の封止信頼性を高めることができる。それゆえ、パッケージ内部を大気圧よりも気圧が低い状態に維持し易く、基板１に形成されている配線導体２どうしの距離を近づけた場合であっても、配線導体２どうしの間で漏れ電流が発生することを抑制できる。したがって、配線導体２どうしの距離を近づけることが可能となり、配線導体２の複雑な配線パターンも形成できるとともに、パッケージの小型化にも対応することができる。   According to the package of the present invention, even if the package is heated and then cooled, it is possible to prevent the substrate 1 and the frame body 3 from being peeled off, so that the sealing reliability inside the package is improved. be able to. Therefore, it is easy to maintain the interior of the package at a pressure lower than the atmospheric pressure, and even when the distance between the wiring conductors 2 formed on the substrate 1 is reduced, a leakage current is generated between the wiring conductors 2. Can be prevented from occurring. Therefore, the distance between the wiring conductors 2 can be reduced, a complicated wiring pattern of the wiring conductors 2 can be formed, and the package can be reduced in size.

最後に、上述したパッケージを用いた電子装置９０について説明する。   Finally, an electronic device 90 using the above-described package will be described.

本発明に係る電子装置９０は、パッケージ内部に配線導体２と電気的に接続してなる電子素子５を備えたものである。   The electronic device 90 according to the present invention includes an electronic element 5 that is electrically connected to the wiring conductor 2 inside the package.

電子素子５は、上述した大電流が流れる半導体素子を用いることができる。電子素子５の取り付け方法は、上述した配線導体２にワイヤーボンディングによって電気的に接続してもよいし、上述した配線導体２上にフリップチップ接合してもよい。特に、電子素子５をフリップチップ接合した場合には、電子素子５が発熱した場合であっても、配線導体２を介してパッケージ外部へ放熱し易いため好ましい。   As the electronic element 5, the above-described semiconductor element through which a large current flows can be used. The electronic element 5 may be attached to the above-described wiring conductor 2 by wire bonding or may be flip-chip bonded onto the above-described wiring conductor 2. In particular, when the electronic element 5 is flip-chip bonded, even if the electronic element 5 generates heat, it is preferable because heat is easily radiated to the outside of the package through the wiring conductor 2.

＜電子装置の製造方法＞
次に、本発明に係るパッケージの製造方法について入出力端子６を用いた場合について説明する。 <Method for Manufacturing Electronic Device>
Next, the case where the input / output terminal 6 is used will be described for the manufacturing method of the package according to the present invention.

本発明に係る電子装置９０の製造方法は、回路基板５０を準備する工程と、入出力端子６の上面にシールリング８を、入出力端子６の下面に金属部材１１を接合する工程と、金属枠体３上に金属部材１１を挟んで入出力端子６を載置する工程と、金属枠体３と金属部材１１とをシーム溶接によって接合する工程と、を備えるものである。   The manufacturing method of the electronic device 90 according to the present invention includes a step of preparing the circuit board 50, a step of bonding the seal ring 8 to the upper surface of the input / output terminal 6, the metal member 11 to the lower surface of the input / output terminal 6, and a metal A step of placing the input / output terminal 6 on the frame 3 with the metal member 11 interposed therebetween and a step of joining the metal frame 3 and the metal member 11 by seam welding are provided.

このような電子装置９０の製造方法によれば、シーム溶接によって少ない熱量で枠体３付近を局所的に熱処理することが可能となるため、回路基板５０に過剰な熱量が加わることを抑制できる。それゆえ、上述した引っ張り応力によって、枠体３が基板１から剥離することを一層抑制できる。また、シーム溶接をすることで、配線部材２と基板１、若しくは放熱部材４と基板１との接合面に介在するロウ材や半田等の接合材が再溶融することを抑制できるため、基板１と配線部材２、若しくは基板１と放熱部材４との位置ずれを抑制できる。その結果、基板１上で上述した引っ張り応力が加わる部位が変化しにくくなるため、より一層枠体３が基板１から剥離しにくくなる。   According to such a manufacturing method of the electronic device 90, the vicinity of the frame 3 can be locally heat-treated with a small amount of heat by seam welding, so that it is possible to suppress an excessive amount of heat from being applied to the circuit board 50. Therefore, it is possible to further suppress the peeling of the frame 3 from the substrate 1 due to the tensile stress described above. Further, by performing seam welding, it is possible to suppress remelting of a bonding material such as a brazing material or solder interposed on the bonding surface between the wiring member 2 and the substrate 1 or the heat dissipation member 4 and the substrate 1. And the displacement of the wiring member 2 or the substrate 1 and the heat dissipation member 4 can be suppressed. As a result, the portion to which the above-described tensile stress is applied on the substrate 1 is less likely to change, so that the frame body 3 becomes even more difficult to peel from the substrate 1.

＜その他＞
なお、本発明は上記実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲内で種々の変更を施すことは何等支障ない。例えば、金属部材１１を図５に示すように突起部１１ａを備えることにより、金属部材１１と入出力端子６とを接合する際に金属部材１１が冷却される場合であっても、突起部１１ａで塑性変形し易いため、入出力端子６に加わる応力を緩和することができる。それゆえ、金属部材１１から入出力端子６が剥離することを抑制することができる。 <Others>
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. For example, by providing the metal member 11 with the protrusion 11a as shown in FIG. 5, even when the metal member 11 is cooled when the metal member 11 and the input / output terminal 6 are joined, the protrusion 11a. Therefore, the stress applied to the input / output terminal 6 can be relaxed. Therefore, peeling of the input / output terminal 6 from the metal member 11 can be suppressed.

本発明の回路基板の一例を示す斜視図である。It is a perspective view which shows an example of the circuit board of this invention. 図１のＸ−Ｘ’線における概略断面図であり、（ａ）は本発明に係る一実施形態示すものであり、（ｂ）は本発明に係る他の実施形態を示すものである。It is a schematic sectional drawing in the X-X 'line | wire of FIG. 1, (a) shows one Embodiment which concerns on this invention, (b) shows other Embodiment based on this invention. 本発明の電子装置の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the electronic device of this invention. 本発明の電子装置の一部拡大図を示すものである。1 is a partially enlarged view of an electronic device according to the present invention. 本発明の他の電子装置を示す概略断面図である。It is a schematic sectional drawing which shows the other electronic device of this invention. 従来の回路基板を示す図である。It is a figure which shows the conventional circuit board.

符号の説明Explanation of symbols

１：基板
２：配線導体
３：枠体
４：放熱部材
５：電子素子
６：入出力端子
７：リード端子
８：シールリング
９：ワイヤー
１０：蓋部材
１１：金属部材
１１ａ：突起部
１２：シーム溶接器具
５０：回路基板
９０：電子装置 1: Board 2: Wiring conductor 3: Frame 4: Heat dissipation member 5: Electronic element 6: Input / output terminal 7: Lead terminal 8: Seal ring 9: Wire 10: Lid member 11: Metal member 11a: Protrusion 12: Seam Welding instrument 50: Circuit board 90: Electronic device

Claims (8)

配線導体を有する基板と、
前記基板を平面視して、前記基板の一主面に設けられた枠体と、
前記基板の他主面における前記枠体に囲まれた領域に設けられ、前記枠体よりも熱膨張係数の大きい第１の放熱部材と、
前記基板の他主面における前記枠体の直下に位置する領域に設けられ、前記枠体よりも熱膨張係数の大きい第２の放熱部材と、
を備え、
前記第２の放熱部材の厚みが、前記第１の放熱部材の厚みよりも薄いことを特徴とする回路基板。 A substrate having a wiring conductor;
A frame provided on one main surface of the substrate in plan view of the substrate;
A first heat dissipating member provided in a region surrounded by the frame body on the other main surface of the substrate, and having a larger thermal expansion coefficient than the frame body;
A second heat dissipating member provided in a region located immediately below the frame body on the other main surface of the substrate, and having a larger thermal expansion coefficient than the frame body;
With
The circuit board , wherein the thickness of the second heat radiating member is smaller than the thickness of the first heat radiating member. 前記第１の放熱部材と前記第２の放熱部材との間に隙間が設けられていることを特徴とする請求項１に記載の回路基板。The circuit board according to claim 1, wherein a gap is provided between the first heat radiating member and the second heat radiating member. 前記配線導体と前記基板との間、又は前記第１の放熱部材及び前記第２の放熱部材と前記基板との間に配された接合材を備え、
金属からなる前記枠体と、該枠体上に載置される入出力端子に設けられた金属部材とをシーム溶接により接合してなることを特徴とする請求項１又は請求項２に記載の回路基板。 A bonding material disposed between the wiring conductor and the substrate, or between the first heat radiating member and the second heat radiating member and the substrate;
The said frame body which consists of metal, and the metal member provided in the input-output terminal mounted on this frame body are joined by seam welding, The Claim 1 or Claim 2 characterized by the above-mentioned. Circuit board. 前記基板は、窒化アルミニウム基板又は窒化ケイ素基板であることを特徴とする請求項１乃至請求項３のいずれかに記載の回路基板。   The circuit board according to any one of claims 1 to 3, wherein the substrate is an aluminum nitride substrate or a silicon nitride substrate. 前記第１の放熱部材及び前記第２の放熱部材は、銅からなることを特徴とする請求項１乃至請求項４のいずれかに記載の回路基板。 The circuit board according to claim 1, wherein the first heat radiating member and the second heat radiating member are made of copper. 前記配線導体は、銅からなることを特徴とする請求項１乃至請求項５のいずれかに記載の回路基板。   The circuit board according to claim 1, wherein the wiring conductor is made of copper. 請求項１乃至請求項６のいずれかに記載の回路基板を用いたパッケージであって、前記枠体上に蓋部材を備えたパッケージ。   A package using the circuit board according to claim 1, wherein the package includes a lid member on the frame. 請求項７に記載のパッケージを用いた電子装置であって、前記パッケージ内部に前記配線導体と電気的に接続してなる電子素子を備えた電子装置。   8. An electronic device using the package according to claim 7, comprising an electronic element that is electrically connected to the wiring conductor inside the package.
JP2007196217A 2007-07-27 2007-07-27 Circuit board, package using the same, and electronic device Expired - Fee Related JP4949159B2 (en)

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