JP4936353B2 - Epoxy resin composition for sealing - Google Patents
Epoxy resin composition for sealing Download PDFInfo
- Publication number
- JP4936353B2 JP4936353B2 JP2005310540A JP2005310540A JP4936353B2 JP 4936353 B2 JP4936353 B2 JP 4936353B2 JP 2005310540 A JP2005310540 A JP 2005310540A JP 2005310540 A JP2005310540 A JP 2005310540A JP 4936353 B2 JP4936353 B2 JP 4936353B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- sealing
- ion exchanger
- inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003822 epoxy resin Substances 0.000 title claims description 34
- 229920000647 polyepoxide Polymers 0.000 title claims description 34
- 239000000203 mixture Substances 0.000 title claims description 28
- 238000007789 sealing Methods 0.000 title claims description 24
- 229910001410 inorganic ion Inorganic materials 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 11
- 239000011256 inorganic filler Substances 0.000 claims description 9
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000011777 magnesium Substances 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- RMXQRHVIUMSGLJ-UHFFFAOYSA-N O.[Bi]=O Chemical group O.[Bi]=O RMXQRHVIUMSGLJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- GBNDTYKAOXLLID-UHFFFAOYSA-N zirconium(4+) ion Chemical group [Zr+4] GBNDTYKAOXLLID-UHFFFAOYSA-N 0.000 claims description 2
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000011342 resin composition Substances 0.000 description 5
- 150000001463 antimony compounds Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical class N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- -1 bromine compound Chemical class 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 150000004677 hydrates Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- PWZFXELTLAQOKC-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide;tetrahydrate Chemical compound O.O.O.O.[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O PWZFXELTLAQOKC-UHFFFAOYSA-A 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 235000013872 montan acid ester Nutrition 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
Description
本発明は、電子部品、半導体等の封止用エポキシ樹脂組成物とこれにより封止された電子部品または半導体装置に関するものである。 The present invention relates to an epoxy resin composition for sealing electronic parts, semiconductors, and the like, and an electronic part or a semiconductor device sealed thereby.
従来より、電子部品や半導体装置等に対して使用する封止用樹脂については、難燃性を付与するためにハロゲン系難燃化合物やアンチモン化合物を配合するとともに、高温雰囲気下での電気特性の信頼性、すなわち高温放置特性を向上させるために、酸化ビスマス水和物等の金属水和物と、ハイドロタルサイト系等の無機イオン交換体を添加したものが知られている（たとえば特許文献１〜３）。 Conventionally, for sealing resins used for electronic parts and semiconductor devices, halogen-based flame retardant compounds and antimony compounds are blended in order to impart flame retardancy, and electrical properties under high temperature atmospheres are also included. In order to improve the reliability, that is, the property of standing at high temperature, a metal hydrate such as bismuth oxide hydrate and an inorganic ion exchanger such as hydrotalcite are added (for example, Patent Document 1). ~ 3).
しかしながら、このような従来の封止用樹脂組成物の場合には、ハロゲン系難燃化合物として代表的な臭素化エポキシ樹脂やアンチモン化合物は、半導体装置の高温放置特性を低下させるという欠点があった。また、近年では、環境への配慮から、臭素化合物やアンチモン化合物を含まない封止用樹脂への転換が求められていた。 However, in the case of such a conventional sealing resin composition, brominated epoxy resins and antimony compounds, which are typical halogen-based flame retardant compounds, have the drawback of reducing the high temperature storage characteristics of semiconductor devices. . In recent years, in consideration of the environment, conversion to a sealing resin containing no bromine compound or antimony compound has been required.
そこで、これら従来の難燃化合物の代替材としてリン系難燃剤の使用や、金属水和物、イオン交換体の選択等が試みられている（たとえば特許文献４〜５）が、たとえば自動車に搭載される電子機器１７５℃の場合のように高度な高温放置特性を満足できる封止用樹脂はこれまでのところ実現されていない。
本発明は、上記のとおりの背景から、従来の問題点を解消し、難燃性を有しているとともに、さらに一層の高温放置特性にも優れた新しい封止用の樹脂組成物と、これを用いて封止した電子部品、半導体装置を提供することを課題としている。 In view of the background as described above, the present invention solves the conventional problems, has a flame retardancy, and further has a high temperature storage property, and a new sealing resin composition, It is an object of the present invention to provide an electronic component and a semiconductor device that are sealed using a metal.
本発明は、上記の課題を解決するための手段として封止用エポキシ樹脂組成物を提供するものであって、このものは以下のことを特徴としている。 This invention provides the epoxy resin composition for sealing as a means for solving said subject, Comprising: This thing is characterized by the following.
第１：電子部品または半導体装置向けの封止用エポキシ樹脂組成物であって、（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）無機充填材とともに、（Ｄ）金属水和物並びに（Ｅ）無機イオン交換体を必須成分として含有し、（Ｃ）無機充填材は溶融シリカ、結晶シリカおよび窒化ケイ素のうちの１種以上のものであり、（Ｅ）無機イオン交換体はジルコニウム系イオン交換体とマグネシウム系イオン交換体である。 First: An epoxy resin composition for sealing for electronic components or semiconductor devices, comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, (D) a metal hydrate, and ( E) containing an inorganic ion exchanger as an essential component, (C) the inorganic filler is one or more of fused silica, crystalline silica, and silicon nitride, and (E) the inorganic ion exchanger is a zirconium-based ion An exchanger and a magnesium-based ion exchanger.
第２：（Ｅ）無機イオン交換体は、組成物全体量に対しての０．０５〜５ｗｔ％の範囲で含有されている。 Second: (E) The inorganic ion exchanger is contained in the range of 0.05 to 5 wt% with respect to the total amount of the composition.
第３：（Ｅ）無機イオン交換体としてのジルコニウム系イオン交換体とマグネシウム系イオン交換体との比率は、重量比で１：５〜５：１の範囲内である。 Third: (E) The ratio of the zirconium-based ion exchanger as the inorganic ion exchanger and the magnesium-based ion exchanger is in the range of 1: 5 to 5: 1 by weight.
第４：組成物全体量に対して、（Ａ）エポキシ樹脂 ５〜１０ｗｔ％、（Ｂ）硬化剤 ３〜５ｗｔ％、（Ｃ）無機充填材 ６０〜９０ｗｔ％、（Ｄ）金属水和物 ５〜２０ｗｔ％の範囲で含有されている。
第５：（Ｄ）金属水和物が、酸化ビスマス水和物である。
そして、本発明は、以上いずれかの封止用エポキシ樹脂組成物の硬化物によって封止された電子部品または半導体装置を提供する。
Fourth: (A) Epoxy resin 5 to 10 wt%, (B) Curing agent 3 to 5 wt%, (C) Inorganic filler 60 to 90 wt%, (D) Metal hydrate 5 with respect to the total amount of the composition 5 It is contained in a range of ˜20 wt% .
Fifth: (D) The metal hydrate is bismuth oxide hydrate.
And this invention provides the electronic component or semiconductor device sealed with the hardened | cured material of the epoxy resin composition for sealing in any one of the above.
上記のとおりの第１の発明によるエポキシ樹脂組成物によれば、エポキシ樹脂において、金属水和物とともに、ジルコニウム系、そしてマグネシウム系の、少くとも特定の２種の無機イオン交換体を配合することによって、従来のような臭素樹脂やアンチモン化合物という難燃化合物を使用することなく、難燃性とともに、優れた高温放置特性を有する封止用樹脂を実現可能としている。 According to the epoxy resin composition of the first invention as described above, in the epoxy resin, together with the metal hydrate, at least two specific inorganic ion exchangers of zirconium type and magnesium type are blended. Thus, without using a conventional flame retardant compound such as a bromine resin or an antimony compound, it is possible to realize a sealing resin having flame retardancy and excellent high temperature storage characteristics.
そして、第２から第５の発明の特定の配合割合からなる本発明の封止用エポキシ樹脂組成物によれば、上記のとおりの効果は、より確実に、より一層顕著なものとなる。 And according to the epoxy resin composition for sealing of the present invention comprising the specific blending ratios of the second to fifth inventions, the effects as described above are more reliably and more prominent.
上記第６の発明では、このような優れた効果を体現した電子部品や半導体装置が提供されることになる。 In the sixth aspect of the invention, an electronic component or a semiconductor device that embodies such excellent effects is provided.
本発明の封止用エポキシ樹脂組成物における必須成分の一つとしての（Ａ）エポキシ樹脂については、従来より知られている非ハロゲン系エポキシ樹脂の各種のものであってよく、たとえば、Ｏ−クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂、ナフタレン環を有するエポキシ樹脂等が好適なものとして挙げられる。 The (A) epoxy resin as one of the essential components in the epoxy resin composition for sealing of the present invention may be various types of conventionally known non-halogen epoxy resins. Preferred examples include a cresol novolac type epoxy resin, a biphenyl type epoxy resin, a triphenylmethane type epoxy resin, and an epoxy resin having a naphthalene ring.
なかでも、Ｏ−クレゾールノボラック型エポキシ樹脂は特に好適なものとして例示される。 Especially, an O-cresol novolak type epoxy resin is illustrated as a particularly suitable thing.
また、（Ｂ）硬化剤についても同様に従来より知られている各種のものであってよく、たとえばフェノール樹脂、フェノールノボラック樹脂、アミン類、イミダゾール類、トリフェニルホスフィン等のリン系硬化剤等が例示される。なかでも、硬化剤としては、１分子中に２個以上のフェノール性水酸基を有するフェノール樹脂、フェノールノボラック樹脂の１種以上のものが好適に考慮される。 Similarly, the (B) curing agent may be various conventionally known ones, such as phosphorus curing agents such as phenol resins, phenol novolac resins, amines, imidazoles, and triphenylphosphine. Illustrated. Especially, as a hardening | curing agent, the phenol resin which has a 2 or more phenolic hydroxyl group in 1 molecule, and 1 or more types of a phenol novolak resin are considered suitably.
（Ｃ）無機充填材については、シリカ、アルミナ、窒化アルミニウム、窒化ケイ素、タルク、炭酸カルシウム、ガラス粉、酸化チタン等の従来より知られている各種のものの１種以上であってよく、なかでも、溶融シリカ、結晶シリカ、窒化ケイ素がより好適なものとして考慮される。 (C) The inorganic filler may be one or more of various conventionally known materials such as silica, alumina, aluminum nitride, silicon nitride, talc, calcium carbonate, glass powder, titanium oxide, among others. Fused silica, crystalline silica, silicon nitride are considered more suitable.
（Ｄ）金属水和物については、従来より知られている酸化ビスマス水和物のような、市販品をはじめとする各種の金属化合物の水和物の１種以上であってよい。そして、この（Ｄ）金属水和物とともに必須成分として、本発明の封止用エポキシ樹脂組成物には、（Ｅ）無機イオン交換体として、市販品等としての、イオン交換能を有するジルコニウム（Ｚｒ）系イオン交換体とマグネシウム（Ｍｇ）系イオン交換体とが共に添加配合される。これらの成分の配合なしには難燃性、そして優れた高温放置特性は得られない。また、（Ｅ）無機イオン交換体としてジルコニウム系およびマグネシウム系とを併用することなしに一方のみの配合においても、優れた高温放置特性は得られない。 The metal hydrate (D) may be one or more hydrates of various metal compounds including commercially available products such as bismuth oxide hydrate which has been conventionally known. And as an essential component with this (D) metal hydrate, the epoxy resin composition for sealing of the present invention includes (E) an inorganic ion exchanger, zirconium having ion exchange capacity as a commercially available product ( A Zr) ion exchanger and a magnesium (Mg) ion exchanger are both added and blended. Without blending these components, flame retardancy and excellent high temperature storage characteristics cannot be obtained. In addition, (E) excellent high temperature storage characteristics cannot be obtained even when only one of the inorganic ion exchangers is used in combination without zirconium and magnesium.
なお、本発明における高温放置特性としては、たとえば自動車向けの車載用特性としての１７５℃以上の温度での電気的特性の優れた信頼性の実現を目安としている。 Note that, as the high temperature storage characteristics in the present invention, for example, realization of excellent reliability of electrical characteristics at a temperature of 175 ° C. or more as in-vehicle characteristics for automobiles is used as a guide.
本発明においては、必須成分としての上記の（Ｅ）無機イオン交換体については、樹脂組成物全体量において、０．０５〜５ｗｔ％の範囲で配合することが、好ましく、さらに好ましくは、０．１〜３．５ｗｔ％の範囲とすることが考慮される。また、ジルコニウム系イオン交換体とマグネシウム系イオン交換体との相互の比率については、重量比で、１：５〜５：１の範囲内、さらに好ましくは、１：２〜２：１の範囲内とすることが考慮される。 In the present invention, the above-mentioned (E) inorganic ion exchanger as an essential component is preferably blended in the range of 0.05 to 5 wt% in the total amount of the resin composition, and more preferably 0. Considering a range of 1 to 3.5 wt%. The ratio of the zirconium ion exchanger to the magnesium ion exchanger is, by weight, in the range of 1: 5 to 5: 1, more preferably in the range of 1: 2 to 2: 1. Is considered.
エポキシ樹脂組成物における（Ｅ）無機イオン交換体以外の成分としては、（Ａ）エポキシ樹脂が５〜１０ｗｔ％、（Ｂ）硬化剤が３〜５ｗｔ％、（Ｃ）無機充填材が６０〜９０ｗｔ％、（Ｄ）金属水和物が５〜２０ｗｔ％の範囲が一般的に好適に考慮される。 Components other than the (E) inorganic ion exchanger in the epoxy resin composition include (A) an epoxy resin of 5 to 10 wt%, (B) a curing agent of 3 to 5 wt%, and (C) an inorganic filler of 60 to 90 wt%. %, (D) a range of 5 to 20 wt% metal hydrate is generally suitably considered.
そして、本発明の組成物の効果を阻害しない範囲において、あるいはまた必要に応じて、天然ワックス、合成ワックス、ステアリン酸、モンタン酸、モンタン酸エステル、リン酸エステル等の従来より知られている離型剤をはじめとして、エラストマー等の低応力化成分、着色剤、シランカップリング剤等の無機充填材用の処理剤、硬化促進剤等を適宜に添加配合してもよい。 In addition, as long as the effect of the composition of the present invention is not hindered or necessary, a conventionally known release agent such as natural wax, synthetic wax, stearic acid, montanic acid, montanic acid ester, phosphoric acid ester, etc. In addition to a mold agent, a low stress component such as an elastomer, a colorant, a treatment agent for an inorganic filler such as a silane coupling agent, a curing accelerator, and the like may be appropriately added and blended.
そして、本発明の上記のエポキシ樹脂組成物は、以上のとおりの各種の成分を配合し、ミキサー等で均一に混合した後にロール等で加熱混練することで調製することができる。 And said epoxy resin composition of this invention can be prepared by mix | blending the various components as mentioned above, mixing uniformly with a mixer etc., and then heat-kneading with a roll etc. now.
また、得られた樹脂組成物を用いて電子部品や半導体装置を封止するための方法としては、代表的には低圧トランスファー成形法があるが、射出成形、圧縮成形、あるいは注型等による封止も可能である。封止の際の加熱によって樹脂組成物を硬化させることで、電子部品や半導体装置の封止品が得られることになる。これにより、たとえば、ＩＬＳ、トランジスター、サイリスタ、ダイオード等の封止品が得られる。 Moreover, as a method for sealing electronic parts and semiconductor devices using the obtained resin composition, there is typically a low-pressure transfer molding method, but sealing by injection molding, compression molding, casting or the like. It can also be stopped. By curing the resin composition by heating at the time of sealing, a sealed product of an electronic component or a semiconductor device can be obtained. Thereby, for example, a sealed product such as an ILS, a transistor, a thyristor, or a diode is obtained.
そこで以下に実施例を示し、さらに詳しく説明する。もちろん、以下の例によって発明が限定されることはない。 Therefore, an example will be shown below and will be described in more detail. Of course, the invention is not limited by the following examples.
表１に示した各種の組成配合（重量部）のエポキシ樹脂組成物を上記方法によって調製した。 Epoxy resin compositions having various compositions (parts by weight) shown in Table 1 were prepared by the above method.
表１のエポキシ樹脂組成物の各々について、以下の方法によって難燃性と高温放置特性とを評価した。なお、エポキシ樹脂組成物の成形条件は、金型温度１７５℃、注入圧力６.９ＭＰａ、９０ｓキュアである。
（評価）
１ 難燃性
１７５℃で成形し得られた成形品（厚み０．８ｍｍ）をＵＬ耐炎性規格に基づき燃焼性の試験を実施した。
２ 高温放置特性
１６ＤＩＰ（３μｍのアルミ配線ＴＥＧ：試験用半導体素子）を２００℃の条件下で、ＴＥＧアルミ配線の抵抗変化率を測定し、変化率が５０％越えたものを不良とし、不良数が５０％を超えた時間を表す。
About each of the epoxy resin composition of Table 1, the flame retardance and high temperature leaving property were evaluated with the following method. The molding conditions of the epoxy resin composition are a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a 90 s cure.
(Evaluation)
1 Flame retardance A molded product obtained by molding at 175 ° C. (thickness 0.8 mm) was subjected to a flammability test based on the UL flame resistance standard.
2 High-temperature storage characteristics The resistance change rate of TEG aluminum wiring is measured under the condition of 16 DIP (3 μm aluminum wiring TEG: test semiconductor element) at 200 ° C. Represents the time over 50%.
表１のように、本発明の実施例１−５においては、難燃性とともに、優れた高温放置特性が得られることが確認された。 As shown in Table 1, in Example 1-5 of the present invention, it was confirmed that excellent high temperature storage characteristics were obtained along with flame retardancy.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005310540A JP4936353B2 (en) | 2005-10-25 | 2005-10-25 | Epoxy resin composition for sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005310540A JP4936353B2 (en) | 2005-10-25 | 2005-10-25 | Epoxy resin composition for sealing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007119536A JP2007119536A (en) | 2007-05-17 |
| JP4936353B2 true JP4936353B2 (en) | 2012-05-23 |
Family
ID=38143719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005310540A Expired - Fee Related JP4936353B2 (en) | 2005-10-25 | 2005-10-25 | Epoxy resin composition for sealing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4936353B2 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2712898B2 (en) * | 1991-07-17 | 1998-02-16 | 東レ株式会社 | Epoxy composition for semiconductor encapsulation |
| JPH09188866A (en) * | 1995-12-29 | 1997-07-22 | Toagosei Co Ltd | Adhesive composition for surface mounting |
| JP2003192912A (en) * | 2001-12-27 | 2003-07-09 | Kyocera Chemical Corp | Sealing resin composition and semiconductor device sealed therewith |
| JP4337411B2 (en) * | 2003-06-09 | 2009-09-30 | 東亞合成株式会社 | Inorganic anion exchanger and epoxy resin composition for sealing electronic parts using the same |
| US20070029682A1 (en) * | 2005-08-05 | 2007-02-08 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin composition and semiconductor device |
-
2005
- 2005-10-25 JP JP2005310540A patent/JP4936353B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007119536A (en) | 2007-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5357576B2 (en) | Epoxy resin composition for semiconductor encapsulation, and semiconductor device | |
| JP2012067252A (en) | Sealing epoxy resin composition and semiconductor device | |
| JP5185218B2 (en) | Hollow package for semiconductor device and semiconductor component device | |
| JP4850510B2 (en) | Resin composition for sealing and semiconductor device | |
| JP2004067717A (en) | Epoxy resin composition and semiconductor device | |
| JP4936353B2 (en) | Epoxy resin composition for sealing | |
| JP2000281877A (en) | Epoxy resin composition and semiconductor device | |
| JPH09241483A (en) | Epoxy resin composition | |
| JP5284693B2 (en) | Epoxy resin composition for sealing semiconductor devices | |
| JP2002356539A (en) | Epoxy resin composition and semiconductor device | |
| KR20190081995A (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device encapsulated using the same | |
| KR20120110599A (en) | Environmentally friendly epoxy resin composition for sealing semiconductor and semiconductor device sealed using the same | |
| KR101337247B1 (en) | Epoxy resin composition for sealing semiconductor and semiconductor device sealed using the same | |
| JP2002241587A (en) | Epoxy resin composition and semiconductor device | |
| KR100679491B1 (en) | Epoxy resin composition for sealing semiconductor | |
| JP2007169493A (en) | Epoxy resin composition for sealing and semiconductor device | |
| JP3877935B2 (en) | Resin composition for sealing and electronic device sealing device | |
| KR101190765B1 (en) | Epoxy resin composition for semiconductor | |
| JP2005082731A (en) | Epoxy resin composition and semiconductor sealing device | |
| JP2004256729A (en) | Epoxy resin composition and sealed semiconductor device | |
| JP4513136B2 (en) | Epoxy resin composition and semiconductor device | |
| KR101373572B1 (en) | Polyphenol type epoxy molding compound of ic packaging | |
| JP2774792B2 (en) | Method for manufacturing semiconductor device | |
| JP2004256648A (en) | Epoxy resin composition and sealed semiconductor device | |
| JP2005281597A (en) | Epoxy resin composition and semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080826 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110427 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110510 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110705 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120111 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120124 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120216 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150302 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4936353 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |