JP4934942B2 - 剥離方法 - Google Patents
剥離方法 Download PDFInfo
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- JP4934942B2 JP4934942B2 JP2003278632A JP2003278632A JP4934942B2 JP 4934942 B2 JP4934942 B2 JP 4934942B2 JP 2003278632 A JP2003278632 A JP 2003278632A JP 2003278632 A JP2003278632 A JP 2003278632A JP 4934942 B2 JP4934942 B2 JP 4934942B2
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- Prior art keywords
- light
- layer
- resin
- substrate
- metal layer
- Prior art date
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
Description
[第1の実施の形態]
[第2の実施の形態]
実施例
2,13 樹脂層
2a,2b,13a,13b 樹脂部
3,12,12a,32 金属層
4,14 素子
5,15 素子分離溝
31 サファイア基板
33 樹脂チップ
L1,L2 パルスレーザ光
L3 YAGレーザ光
Claims (11)
- 基板上に光吸収層を形成し、この上部に樹脂層を介して素子を形成し、
前記光吸収層に光を照射し、
前記光吸収層で発生する熱を前記樹脂層に伝熱することによって当該樹脂層をアブレーションさせて前記基板から前記素子を剥離する
剥離方法。 - 前記樹脂層及び前記光吸収層が積層される基板の裏面側から前記光を照射する
請求項1記載の剥離方法。 - 前記基板は、光透過性を有する無機材料、又は光透過性を有する合成樹脂を主たる材料とする
請求項2記載の剥離方法。 - 前記樹脂層は前記光吸収層の上側に形成され、
前記素子のサイズに合わせて前記樹脂層が分離されている
請求項1記載の剥離方法。 - 前記光吸収層がアブレーションされる温度は、前記樹脂層がアブレーションされる温度より高い
請求項1記載の剥離方法。 - 前記光吸収層は、金属を主たる材料とする
請求項1記載の剥離方法。 - 前記金属は、Ti、Cr、Niから選択された一種、又は2種以上の材料である
請求項6記載の剥離方法。 - 前記光吸収層に照射される光の波長は、可視光、又は赤外光の波長領域にある
請求項1記載の剥離方法。 - 前記光は、レーザ光である
請求項1記載の剥離方法。 - 基板上に光吸収層を形成し、この上部に樹脂層を介して素子を形成し、
前記光吸収層に選択的に光を照射し、
前記光吸収層のうち前記光が照射された領域に接する前記樹脂層に当該光吸収層で発生する熱を伝熱することによって当該樹脂層をアブレーションさせて前記基板から前記素子を剥離する
剥離方法。 - 前記光吸収層は、半透明である
請求項10記載の剥離方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003278632A JP4934942B2 (ja) | 2003-07-23 | 2003-07-23 | 剥離方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003278632A JP4934942B2 (ja) | 2003-07-23 | 2003-07-23 | 剥離方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005045074A JP2005045074A (ja) | 2005-02-17 |
JP4934942B2 true JP4934942B2 (ja) | 2012-05-23 |
Family
ID=34264985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003278632A Expired - Fee Related JP4934942B2 (ja) | 2003-07-23 | 2003-07-23 | 剥離方法 |
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JP (1) | JP4934942B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021091218A1 (ko) * | 2019-11-07 | 2021-05-14 | 양진석 | 복수의 칩 이송 장치 및 복수의 칩 이송 방법 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006286493A (ja) * | 2005-04-04 | 2006-10-19 | Sony Corp | 表示素子、表示装置および表示素子の製造方法 |
EP1888808A2 (en) * | 2005-06-07 | 2008-02-20 | Fujifilm Corporation | Functional film containing structure and method of manufacturing functional film |
JP5003349B2 (ja) * | 2007-08-23 | 2012-08-15 | セイコーエプソン株式会社 | 電気光学装置の製造方法、電気光学装置の製造装置 |
KR101767078B1 (ko) * | 2013-07-29 | 2017-08-10 | 에피스타 코포레이션 | 반도체 소자를 선택적으로 전이하는 방법 |
CN106132627B (zh) * | 2015-01-13 | 2018-09-07 | 罗芬-新纳技术有限责任公司 | 用于对脆性材料进行划割并随后进行化学蚀刻的方法和*** |
FR3079657B1 (fr) * | 2018-03-29 | 2024-03-15 | Soitec Silicon On Insulator | Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure |
JP2019075569A (ja) * | 2018-12-12 | 2019-05-16 | 晶元光電股▲ふん▼有限公司Epistar Corporation | 半導体素子を選択的にトランスファーする方法 |
JP7272078B2 (ja) * | 2019-04-10 | 2023-05-12 | 大日本印刷株式会社 | 保持部材、転写部材、保持部材の製造方法、転写部材の製造方法、及び、発光基板の製造方法 |
JPWO2022201767A1 (ja) * | 2021-03-26 | 2022-09-29 | ||
TWI794783B (zh) * | 2021-04-07 | 2023-03-01 | 梁晋碩 | 轉移多個晶片的裝置和轉移多個晶片的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3890921B2 (ja) * | 2001-06-05 | 2007-03-07 | ソニー株式会社 | 素子の配列方法及び画像表示装置の製造方法 |
JP3959988B2 (ja) * | 2001-06-27 | 2007-08-15 | ソニー株式会社 | 素子の転写方法 |
WO2003010825A1 (en) * | 2001-07-24 | 2003-02-06 | Seiko Epson Corporation | Transfer method, method of manufacturing thin film element, method of manufacturing integrated circuit, circuit substrate and method of manufacturing the circuit substrate, electro-optic device and method of manufacturing the electro-optic device, and ic card and electronic equipmen |
-
2003
- 2003-07-23 JP JP2003278632A patent/JP4934942B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021091218A1 (ko) * | 2019-11-07 | 2021-05-14 | 양진석 | 복수의 칩 이송 장치 및 복수의 칩 이송 방법 |
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JP2005045074A (ja) | 2005-02-17 |
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