JP4932671B2 - エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体 - Google Patents
エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体 Download PDFInfo
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- JP4932671B2 JP4932671B2 JP2007278450A JP2007278450A JP4932671B2 JP 4932671 B2 JP4932671 B2 JP 4932671B2 JP 2007278450 A JP2007278450 A JP 2007278450A JP 2007278450 A JP2007278450 A JP 2007278450A JP 4932671 B2 JP4932671 B2 JP 4932671B2
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- 238000005530 etching Methods 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 238000000059 patterning Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 8
- 238000009966 trimming Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (3)
- 基板上の被エッチング層を所定のパターンにエッチングするためのエッチングマスクを形成する方法であって、
第1のマスクパターン形成ステップと、
前記第1のマスクパターン形成ステップの後に行われる第2のマスクパターン形成ステップと、
前記第1のマスクパターン形成ステップと、前記第2のマスクパターン形成ステップとの間に、前記第1のマスクパターン形成ステップにより形成された第1のパターンの幅を測定する第1測定ステップとを具備し、
前記第2のマスクパターン形成ステップは、
フォトレジストをパターニングする工程と、
このフォトレジストのパターンの幅を測定する第2測定ステップと、
当該第2測定ステップで測定されたフォトレジストのパターンの幅の値と前記第1測定ステップで測定された第1のパターンの幅の値とに基づいて、前記フォトレジストのパターンをトリミングすることによって、当該第2のマスクパターン形成ステップの際に形成される第2のパターンの幅を補正するステップとを具備し、
これによって前記第1のマスクパターン形成ステップで形成された第1のパターンと前記第2のマスクパターン形成ステップで形成された第2のパターンの幅を同一にし、
かつ、前記基板は、前記被エッチング層上に形成された第2マスク層と、前記第2マスク層の上に形成された第1マスク層とを有し、
前記第1のマスクパターン形成ステップにおいては、前記第1のパターンを前記第1マスク層に形成し、
前記第2のマスクパターン形成ステップにおいては、前記第1のパターンと前記第2のパターンを前記第2マスク層に形成する
ことを特徴とするエッチングマスクの形成方法。 - コンピュータ上で動作し、基板上の被エッチング層を所定のパターンにエッチングするためのエッチングマスクを形成する装置を制御する制御プログラムであって、
実行時に、請求項1に記載のエッチングマスクの形成方法が実行されるように、前記エッチングマスクを形成する装置を制御することを特徴とする制御プログラム。 - 基板上の被エッチング層を所定のパターンにエッチングするためのエッチングマスクを形成する装置を制御するためのコンピュータ上で動作する制御プログラムが記憶されたプログラム記憶媒体であって、
前記制御プログラムは、実行時に、請求項1に記載のエッチングマスクの形成方法が行われるように、前記エッチングマスクを形成する装置を制御することを特徴とするプログラム記憶媒体。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007278450A JP4932671B2 (ja) | 2007-10-26 | 2007-10-26 | エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体 |
PCT/JP2008/002997 WO2009054131A1 (en) | 2007-10-26 | 2008-10-23 | Forming method of etching mask, control program and program storage medium |
US12/441,823 US8198183B2 (en) | 2007-10-26 | 2008-10-23 | Forming method of etching mask, control program and program storage medium |
KR1020097004260A KR101126154B1 (ko) | 2007-10-26 | 2008-10-23 | 에칭 마스크 형성 방법 및 프로그램 저장 매체 |
TW097141022A TWI369734B (en) | 2007-10-26 | 2008-10-24 | Forming method of etching mask, control program and program storage medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007278450A JP4932671B2 (ja) | 2007-10-26 | 2007-10-26 | エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009110986A JP2009110986A (ja) | 2009-05-21 |
JP4932671B2 true JP4932671B2 (ja) | 2012-05-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007278450A Active JP4932671B2 (ja) | 2007-10-26 | 2007-10-26 | エッチングマスクの形成方法、制御プログラム及びプログラム記憶媒体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8198183B2 (ja) |
JP (1) | JP4932671B2 (ja) |
KR (1) | KR101126154B1 (ja) |
TW (1) | TWI369734B (ja) |
WO (1) | WO2009054131A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4638550B2 (ja) | 2008-09-29 | 2011-02-23 | 東京エレクトロン株式会社 | マスクパターンの形成方法、微細パターンの形成方法及び成膜装置 |
KR102249196B1 (ko) | 2014-10-06 | 2021-05-11 | 삼성전자주식회사 | 반도체 소자의 미세 패턴의 형성을 위한 식각 공정의 제어 방법 |
JP2016127224A (ja) * | 2015-01-08 | 2016-07-11 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6541618B2 (ja) * | 2016-05-25 | 2019-07-10 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
CN111403278B (zh) * | 2019-11-29 | 2023-02-10 | 上海华力微电子有限公司 | 芯轴图形的形成方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63170917A (ja) * | 1987-01-09 | 1988-07-14 | Nec Corp | 微細パタ−ンの形成方法 |
JPH07147219A (ja) * | 1993-11-24 | 1995-06-06 | Sony Corp | パターンの形成方法 |
JP3406302B2 (ja) * | 2001-01-16 | 2003-05-12 | 株式会社半導体先端テクノロジーズ | 微細パターンの形成方法、半導体装置の製造方法および半導体装置 |
US20070018286A1 (en) | 2005-07-14 | 2007-01-25 | Asml Netherlands B.V. | Substrate, lithographic multiple exposure method, machine readable medium |
US7745339B2 (en) | 2006-02-24 | 2010-06-29 | Hynix Semiconductor Inc. | Method for forming fine pattern of semiconductor device |
KR100861212B1 (ko) | 2006-02-24 | 2008-09-30 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
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2007
- 2007-10-26 JP JP2007278450A patent/JP4932671B2/ja active Active
-
2008
- 2008-10-23 WO PCT/JP2008/002997 patent/WO2009054131A1/en active Application Filing
- 2008-10-23 KR KR1020097004260A patent/KR101126154B1/ko active IP Right Grant
- 2008-10-23 US US12/441,823 patent/US8198183B2/en active Active
- 2008-10-24 TW TW097141022A patent/TWI369734B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20090291560A1 (en) | 2009-11-26 |
JP2009110986A (ja) | 2009-05-21 |
KR20090084807A (ko) | 2009-08-05 |
WO2009054131A1 (en) | 2009-04-30 |
KR101126154B1 (ko) | 2012-03-22 |
US8198183B2 (en) | 2012-06-12 |
TW200931516A (en) | 2009-07-16 |
TWI369734B (en) | 2012-08-01 |
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