JP4925346B2 - Light emitting device - Google Patents

Light emitting device Download PDF

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JP4925346B2
JP4925346B2 JP2008019555A JP2008019555A JP4925346B2 JP 4925346 B2 JP4925346 B2 JP 4925346B2 JP 2008019555 A JP2008019555 A JP 2008019555A JP 2008019555 A JP2008019555 A JP 2008019555A JP 4925346 B2 JP4925346 B2 JP 4925346B2
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led chip
light
light emitting
lens
conversion member
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JP2008124500A (en
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洋二 浦野
健一郎 田中
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Description

本発明は、ＬＥＤチップ（発光ダイオードチップ）を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、ＬＥＤチップとＬＥＤチップから放射された光によって励起されてＬＥＤチップとは異なる発光色の光を放射する波長変換材料としての蛍光体（蛍光顔料、蛍光染料など）とを組み合わせてＬＥＤチップの発光色とは異なる色合いの光を出す発光装置の研究開発が各所で行われている（例えば、特許文献１）。なお、この種の発光装置としては、例えば、青色光あるいは紫外光を放射するＬＥＤチップと蛍光体とを組み合わせて白色の光（白色光の発光スペクトル）を得る白色発光装置（一般的に白色ＬＥＤと呼ばれている）の商品化がなされている。   Conventionally, LED chips are combined with LED chips and phosphors (fluorescent pigments, fluorescent dyes, etc.) as wavelength conversion materials that are excited by light emitted from the LED chips and emit light of a different emission color from the LED chips. Research and development of a light emitting device that emits light of a color different from the light emission color is performed in various places (for example, Patent Document 1). In addition, as this kind of light emitting device, for example, a white light emitting device (generally a white LED) that obtains white light (white light emission spectrum) by combining an LED chip that emits blue light or ultraviolet light and a phosphor. Has been commercialized).

上記特許文献１には、例えば、図３に示すように、ＬＥＤチップ１０’と、ＬＥＤチップ１０’が実装されるベース部材たる実装基板２０’であって厚み方向の一面側にＬＥＤチップ１０’を収納する収納凹所２０ａ’が形成された実装基板２０’と、収納凹所２０ａ’に充填されＬＥＤチップ１０’を封止した封止樹脂からなる封止部５０’と、ＬＥＤチップ１０’から放射された光によって励起されてＬＥＤチップ１０’の発光色とは異なる色の光を放射する蛍光体を樹脂とともに成形した成形品であって封止部５０’上に重ねて配置されたシート状の色変換部材７０’とを備えた発光装置が開示されている。なお、上記特許文献１には、ＬＥＤチップ１０’として青色光を放射するＧａＮ系青色ＬＥＤチップを用い、色変換部材７０’の蛍光体として黄色蛍光体を用いている。また、ＬＥＤチップ１０’は、結晶成長用の基板としてサファイア基板を用いており、サファイア基板の一表面側に形成された発光部を実装基板２０’における収納凹所２０ａ’の内底面に対向させた形でフリップチップ実装し、サファイア基板の他表面を光取り出し面としている。
特開２００３−４６１３３号公報（段落〔００１８〕−〔００２４〕、図１） In Patent Document 1, for example, as shown in FIG. 3, an LED chip 10 ′ and a mounting substrate 20 ′ that is a base member on which the LED chip 10 ′ is mounted, and the LED chip 10 ′ on one surface side in the thickness direction. A mounting substrate 20 ′ in which a housing recess 20a ′ is formed, a sealing portion 50 ′ made of a sealing resin filled in the housing recess 20a ′ and sealing the LED chip 10 ′, and the LED chip 10 ′. A molded product obtained by molding together with a resin a phosphor that emits light of a color different from the emission color of the LED chip 10 ′ when excited by the light emitted from the LED chip 10 ′, and is disposed on the sealing portion 50 ′. A light emitting device including a color conversion member 70 ′ in a shape is disclosed. In Patent Document 1, a GaN blue LED chip that emits blue light is used as the LED chip 10 ', and a yellow phosphor is used as the phosphor of the color conversion member 70'. Further, the LED chip 10 ′ uses a sapphire substrate as a substrate for crystal growth, and a light emitting portion formed on one surface side of the sapphire substrate is opposed to the inner bottom surface of the housing recess 20a ′ in the mounting substrate 20 ′. Flip chip mounting is used, and the other surface of the sapphire substrate is used as a light extraction surface.
JP 2003-46133 A (paragraphs [0018]-[0024], FIG. 1)

しかしながら、上記特許文献１に開示された発光装置では、色変換部材７０’がシート状の形状に成形されているので、色変換部材７０’へ入射する光の入射方向によって色変換部材７０’の厚みが異なり、色むらが生じてしまうという不具合があった。   However, in the light emitting device disclosed in Patent Document 1, since the color conversion member 70 ′ is formed into a sheet-like shape, the color conversion member 70 ′ of the color conversion member 70 ′ depends on the incident direction of light incident on the color conversion member 70 ′. There was a problem that the thickness was different and uneven color occurred.

そこで、図３に示す構成の発光装置において、シート状の色変換部材７０’を封止部５０’に重ねて配置する代わりに、光入射面が平面状に形成されるとともに光出射面が凸曲面状に形成されたレンズを封止部５０’に重ねて配置し、内面がレンズの光出射面に沿った形状に形成されたドーム状の色変換部材をレンズに被着することが考えられるが、レンズおよび色変換部材の寸法精度や位置決め精度に起因して組み立てることができないことがあり、歩留まりが低下してしまうという不具合があった。なお、色変換部材をレンズに被着した構成では、色変換部材とレンズとが密着しているので、色変換部材に外力が作用したときに色変換部材に発生した応力がレンズおよび封止部５０’を通してＬＥＤチップ１０’に伝達されてＬＥＤチップ１０’の発光特性が変動してしまうという不具合や、ＬＥＤチップ１０’から放射され封止部５０’およびレンズを通して色変換部材に入射し当該色変換部材中の蛍光体の粒子により散乱された光のうちレンズ側へ散乱された光の大部分がレンズに再入射して封止部５０’へ戻ってしまい、装置全体としての外部への光取り出し効率が低下するとともに、封止部５０’の劣化原因になって発光装置の寿命が短くなってしまうという不具合があった。   Therefore, in the light emitting device having the configuration shown in FIG. 3, instead of arranging the sheet-like color conversion member 70 ′ on the sealing portion 50 ′, the light incident surface is formed in a flat shape and the light emitting surface is convex. It is conceivable that a lens formed in a curved surface is placed over the sealing portion 50 'and a dome-shaped color conversion member whose inner surface is formed in a shape along the light emitting surface of the lens is attached to the lens. However, the lens and the color conversion member may not be assembled due to the dimensional accuracy and positioning accuracy, resulting in a decrease in yield. In the configuration in which the color conversion member is attached to the lens, since the color conversion member and the lens are in close contact, the stress generated in the color conversion member when an external force is applied to the color conversion member is affected by the lens and the sealing portion. 50 'is transmitted to the LED chip 10' and the light emission characteristics of the LED chip 10 'fluctuate, or the light emitted from the LED chip 10' is incident on the color conversion member through the sealing portion 50 'and the lens. Of the light scattered by the phosphor particles in the conversion member, most of the light scattered to the lens side reenters the lens and returns to the sealing portion 50 ′, and the light to the outside as the entire device There is a problem that the extraction efficiency is lowered and the lifetime of the light emitting device is shortened due to the deterioration of the sealing portion 50 '.

本発明は上記事由に鑑みて為されたものであり、その目的は、色むらを低減でき且つレンズおよび色変換部材の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できる発光装置を提供することにある。   The present invention has been made in view of the above reasons, and an object of the present invention is to provide a light-emitting device that can reduce color unevenness and suppress a decrease in yield due to dimensional accuracy and positioning accuracy of lenses and color conversion members. There is.

請求項１の発明は、ＬＥＤチップと、ＬＥＤチップが実装されたベース部材と、ＬＥＤチップを封止した封止樹脂からなる封止部と、光出射面が凸曲面状に形成され封止部に重ねて配置されたレンズと、ＬＥＤチップから放射された光によって励起されてＬＥＤチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズの前記光出射面側にレンズを覆い前記光出射面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、レンズは、前記光出射面が封止部側の光入射面から入射した光を前記光出射面と空気層との境界で全反射させない凸曲面状であり球面の一部により形成されており、当該球面の中心がＬＥＤチップの厚み方向に沿った発光部の中心線上に位置するように配置されてなり、色変換部材は、内面が前記光出射面に沿った形状であり前記光出射面に対応した前記球面よりも直径が大きな球面の一部からなる形状に形成されており、レンズの光出射面の位置によらず法線方向におけるレンズの前記光出射面と色変換部材の内面との間の距離が略一定値となっていることを特徴とする。 The invention of claim 1 is an LED chip, a base member on which the LED chip is mounted, a sealing portion made of a sealing resin that seals the LED chip, and a light emitting surface formed into a convex curved surface. And a molded product obtained by molding together with a transparent material a phosphor that emits light of a color different from the emission color of the LED chip when excited by the light emitted from the LED chip. A dome-shaped color conversion member that covers the lens on the light emitting surface side and is disposed in such a manner that an air layer is formed between the lens and the light emitting surface. The light incident surface is a convex curved surface that does not totally reflect light incident on the boundary between the light exit surface and the air layer, and is formed by a part of a spherical surface, and the center of the spherical surface is along the thickness direction of the LED chip. Placed on the center line of Is made, the color conversion member, the inner surface is formed into a shape having a diameter of a part of the large spherical than the spherical surface corresponding to the shape and is the light exit surface along the light exit surface, of the lens wherein the distance between the light emitting surface and the inner surface of the color conversion member lenses in the normal direction regardless of the position of the light emitting surface has a substantially constant value.

この発明によれば、光出射面が凸曲面状に形成され封止部に重ねて配置されたレンズと、ＬＥＤチップから放射された光によって励起されてＬＥＤチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズの前記光出射面側にレンズを覆い前記光出射面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備えていることにより、色むらを低減でき、しかも、色変換部材はレンズの光出射面との間に空気層が形成される形で配設すればよく、色変換部材をレンズに密着させる必要がないので、色変換部材の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できるとともに、色変換部材に外力が作用したときに色変換部材に発生した応力がレンズおよび封止部を通してＬＥＤチップに伝達されるのを抑制できるという利点や、ＬＥＤチップから放射され封止部およびレンズを通して色変換部材に入射し当該色変換部材中の蛍光体の粒子により散乱された光のうちレンズ側へ散乱されてレンズを透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点がある。   According to the present invention, the light emitting surface is formed in a convex curved surface and is disposed so as to overlap the sealing portion, and light of a color different from the emission color of the LED chip excited by the light emitted from the LED chip. A dome-shaped product formed by molding a phosphor that emits light together with a transparent material, covering the lens on the light emitting surface side of the lens and forming an air layer between the lens and the light emitting surface. By providing the color conversion member, color unevenness can be reduced, and the color conversion member may be disposed in a form in which an air layer is formed between the light emitting surface of the lens. Since it is not necessary to be in close contact with the lens, it is possible to suppress a decrease in yield due to the dimensional accuracy and positioning accuracy of the color conversion member, and stress generated in the color conversion member when an external force is applied to the color conversion member. LE through the stop The advantage that it can be suppressed from being transmitted to the chip, and the light emitted from the LED chip and incident on the color conversion member through the sealing portion and the lens and scattered by the phosphor particles in the color conversion member to the lens side There is an advantage that the amount of light scattered and transmitted through the lens can be reduced, and the light extraction efficiency to the outside as the entire apparatus can be improved.

また、この発明によれば、レンズは、前記光出射面が封止部側の光入射面から入射した光を前記光出射面と空気層との境界で全反射させない凸曲面状であり球面の一部により形成されており、当該球面の中心がＬＥＤチップの厚み方向に沿った発光部の中心線上に位置するように配置されているので、ＬＥＤチップから放射された光が前記光出射面と空気層との境界で全反射されることなく色変換部材まで到達しやすくなり、全光束を高めることができる。 Further, according to this invention, the lens, the light emitting surface is a convex curved surface which does not totally reflected at the boundary between the light emitting surface and the air layer light incident from the light incident surface of the sealing portion side spherical surface Since the center of the spherical surface is located on the center line of the light emitting part along the thickness direction of the LED chip, the light emitted from the LED chip is emitted from the light until Ku color conversion member such that is totally reflected at the boundary between the surface and the air layer easily reached, it is possible to increase the total luminous flux.

また、この発明によれば、色変換部材は、内面が前記光出射面に沿った形状であり前記光出射面に対応した前記球面よりも直径が大きな球面の一部からなる形状に形成されており、レンズの光出射面の位置によらず法線方向におけるレンズの前記光出射面と色変換部材の内面との間の距離が略一定値となっているので、レンズの前記光出射面の位置によらず法線方向における前記光出射面と色変換部材の内面との間の距離が略一定値となる。 Further, according to the present invention, the color conversion member is formed in a shape formed of a part of a spherical surface having an inner surface along the light emitting surface and a diameter larger than the spherical surface corresponding to the light emitting surface. cage, the distance between the light emitting surface and the inner surface of the color conversion member lenses in the normal direction regardless of the position of the light emitting surface of the lens are substantially constant value, the light emission surface of the lens Regardless of the position, the distance between the light emitting surface and the inner surface of the color conversion member in the normal direction becomes a substantially constant value.

請求項２の発明は、請求項１の発明において、前記ＬＥＤチップの発光色が青色であり、前記色変換部材の前記蛍光体として黄色蛍光体もしくは赤色蛍光体と緑色蛍光体とを用いてなることを特徴とする。 According to a second aspect of the invention, in the first aspect of the invention, the emission color of the LED chip is blue, and a yellow phosphor or a red phosphor and a green phosphor are used as the phosphor of the color conversion member. It is characterized by that.

この発明によれば、白色光の色むらを低減できる。   According to the present invention, the color unevenness of white light can be reduced.

請求項１の発明では、色むらを低減でき且つレンズおよび色変換部材の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できるという効果がある。   According to the first aspect of the present invention, it is possible to reduce color unevenness and to suppress a decrease in yield due to the dimensional accuracy and positioning accuracy of the lens and the color conversion member.

本実施形態の発光装置は、図１に示すように、ＬＥＤチップ１０と、ＬＥＤチップ１０が実装された実装基板２０と、実装基板２０におけるＬＥＤチップ１０の実装面側でＬＥＤチップ１０を囲みＬＥＤチップ１０から放射された光を反射する枠状のリフレクタ４０と、リフレクタ４０の内側に充填されＬＥＤチップ１０を封止した透明な封止樹脂（例えば、シリコーン樹脂など）からなる封止部５０と、封止部５０に重ねて配置されるレンズ６０と、ＬＥＤチップ１０から放射された光によって励起されてＬＥＤチップ１０の発光色とは異なる色の光を放射する蛍光体を透明材料（例えば、シリコーン樹脂など）とともに成形した成形品であってレンズ６０の光出射面６０ｂ側にレンズ６０を覆い光出射面６０ｂとの間に空気層８０が形成される形で配設されるドーム状の色変換部材７０とを備えている。   As shown in FIG. 1, the light emitting device of this embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, and an LED chip 10 that surrounds the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20. A frame-like reflector 40 that reflects light emitted from the chip 10, and a sealing portion 50 made of a transparent sealing resin (for example, silicone resin) filled inside the reflector 40 and sealing the LED chip 10; A transparent material (for example, a lens 60 disposed on the sealing portion 50 and a phosphor that emits light of a color different from the emission color of the LED chip 10 when excited by the light emitted from the LED chip 10. A molded product formed with a silicone resin or the like, and covers the lens 60 on the light emitting surface 60b side of the lens 60, and an air layer 80 is formed between the lens 60 and the light emitting surface 60b. And a dome-shaped color conversion member 70 which is disposed in a manner to be.

実装基板２０は、金属板２１上に絶縁層２２を介して対となる導体パターン２３，２３が形成された金属基板を採用しており、ＬＥＤチップ１０で発生した熱が金属板２１に伝熱されるようになっている。なお、金属板２１の材料としてはＣｕを採用しているが、熱伝導率の比較的高い金属材料であればよく、Ｃｕに限らず、Ａｌなどを採用してもよい。   The mounting substrate 20 employs a metal substrate on which a pair of conductor patterns 23 and 23 are formed on an insulating layer 22 on a metal plate 21, and heat generated in the LED chip 10 is transferred to the metal plate 21. It is supposed to be. In addition, although Cu is employ | adopted as a material of the metal plate 21, what is necessary is just a metal material with comparatively high thermal conductivity, and not only Cu but Al etc. may be employ | adopted.

ＬＥＤチップ１０は、青色光を放射するＧａＮ系青色ＬＥＤチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がＧａＮに近く且つ導電性を有するｎ形のＳｉＣ基板からなる導電性基板１１を用いており、導電性基板１１の主表面側にＧａＮ系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部１２がエピタキシャル成長法（例えば、ＭＯＶＰＥ法など）により成長され、導電性基板１１の裏面に図示しないカソード側の電極であるカソード電極（ｎ電極）が形成され、発光部１２の表面（導電性基板１１の主表面側の最表面）に図示しないアノード側の電極であるアノード電極（ｐ電極）が形成されている。要するに、ＬＥＤチップ１０は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ｎｉ膜とＡｕ膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Ａｌなどを採用してもよい。なお、本実施形態では、ＬＥＤチップ１０の発光部１２が導電性基板１１よりも金属板２１から離れた側となるように金属板２１に実装されているが、ＬＥＤチップ１０の発光部１２が導電性基板１１よりも金属板２１に近い側となるように金属板２１に実装するようにしてもよい。光取り出し効率を考えた場合には、発光部１２を金属板２１から離れた側に配置することが望ましいが、本実施形態では導電性基板１１と発光部１２とが同程度の屈折率を有しているので、発光部１２を金属板２１に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light emitting portion 12 formed of a GaN-based compound semiconductor material and having, for example, a double hetero structure is formed on the main surface side of the conductive substrate 11 by an epitaxial growth method (for example, MOVPE method). ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is mounted on the metal plate 21 so as to be on the side farther from the metal plate 21 than the conductive substrate 11. The conductive plate 11 may be mounted on the metal plate 21 so as to be closer to the metal plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the metal plate 21, but in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the metal plate 21, the light extraction loss does not become too large.

また、ＬＥＤチップ１０は、上述の金属板２１に、ＬＥＤチップ１０のチップサイズよりも大きなサイズの矩形板状に形成されＬＥＤチップ１０と金属板２１との線膨張率の差に起因してＬＥＤチップ１０に働く応力を緩和するサブマウント部材３０を介して実装されている。サブマウント部材３０は、上記応力を緩和する機能だけでなく、ＬＥＤチップ１０で発生した熱を金属板２１においてＬＥＤチップ１０のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材３０の材料として熱伝導率が比較的高く且つ絶縁性を有するＡｌＮを採用しており、ＬＥＤチップ１０は、上記カソード電極がサブマウント部材３０におけるＬＥＤチップ１０側の表面に設けられ上記カソード電極と接続される電極パターン（図示せず）および金属細線（例えば、金細線、アルミニウム細線など）からなるボンディングワイヤ１４を介して一方の導体パターン２３と電気的に接続され、上記アノード電極がボンディングワイヤ１４を介して他方の導体パターン２３と電気的に接続されている。なお、ＬＥＤチップ１０とサブマウント部材３０とは、ＡｕＳｎ、ＳｎＡｇＣｕなどの鉛フリー半田を用いて接合されている。   Further, the LED chip 10 is formed on the metal plate 21 in the shape of a rectangular plate having a size larger than the chip size of the LED chip 10, and the LED chip 10 is caused by the difference in linear expansion coefficient between the LED chip 10 and the metal plate 21. It is mounted via a submount member 30 that relieves stress acting on the chip 10. The submount member 30 has not only a function of relieving the stress, but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 on the metal plate 21. . In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. It is electrically connected to one conductor pattern 23 via a bonding wire 14 provided on the surface and connected to the cathode electrode (not shown) and a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.). The anode electrode is electrically connected to the other conductor pattern 23 via the bonding wire 14. The LED chip 10 and the submount member 30 are bonded using lead-free solder such as AuSn or SnAgCu.

サブマウント部材３０の材料はＡｌＮに限らず、線膨張率が導電性基板１１の材料である６Ｈ−ＳｉＣに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合ＳｉＣ、Ｓｉなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to 6H—SiC that is the material of the conductive substrate 11 and the heat conductivity is relatively high. Si or the like may be employed.

リフレクタ４０は、円形状に開口した枠状の形状であって、ＬＥＤチップ１０の側面から放射された光がレンズ６０側へ反射されるように内側面４０ａの形状が設計されている。すなわち、リフレクタ４０は、ＬＥＤチップ１０の厚み方向においてＬＥＤチップ１０から離れるに従って開口面積が大きくなる形状（つまり、上記実装面から離れるにつれて開口面積が徐々に大きくなる形状）に形成されている。ここにおいて、リフレクタ４０の材料としては、ＬＥＤチップ１０から放射される光（ここでは、青色光）に対する反射率が比較的大きな材料（例えば、Ａｌなど）を採用し、リフレクタ４０の内側面４０ａを鏡面とすればよく、リフレクタ４０は例えばアルミニウムの基材を絞り加工して形成すればよい。なお、本実施形態では、リフレクタ４０を実装基板２０に固着した後でリフレクタ４０の内側にＬＥＤチップ１０を封止する上述の封止樹脂をポッティングしている。   The reflector 40 has a frame shape opened in a circular shape, and the shape of the inner side surface 40a is designed so that light emitted from the side surface of the LED chip 10 is reflected toward the lens 60 side. That is, the reflector 40 is formed in a shape in which the opening area increases as the distance from the LED chip 10 increases in the thickness direction of the LED chip 10 (that is, the shape in which the opening area gradually increases as the distance from the mounting surface increases). Here, as the material of the reflector 40, a material (for example, Al) having a relatively high reflectance with respect to light emitted from the LED chip 10 (here, blue light) is adopted, and the inner side surface 40a of the reflector 40 is used. What is necessary is just to make it a mirror surface, and the reflector 40 should just be formed, for example by drawing an aluminum base material. In this embodiment, after the reflector 40 is fixed to the mounting substrate 20, the above-described sealing resin that seals the LED chip 10 is potted inside the reflector 40.

レンズ６０は、封止部５０側の光入射面６０ａが平面状に形成されるとともに光出射面６０ｂが凸曲面状に形成されている。ここにおいて、レンズ６０は、シリコーン樹脂の成形品により構成してあり、上記封止樹脂と屈折率が同じ値となっているが、レンズ６０は、上記封止樹脂の屈折率以上の屈折率を有する透明材料であれば、シリコーン樹脂以外の材料を用いてもよい。   In the lens 60, the light incident surface 60a on the sealing portion 50 side is formed in a flat shape, and the light emitting surface 60b is formed in a convex curved surface shape. Here, the lens 60 is formed of a molded product of silicone resin and has the same refractive index as that of the sealing resin. However, the lens 60 has a refractive index equal to or higher than the refractive index of the sealing resin. A material other than silicone resin may be used as long as it has a transparent material.

ところで、レンズ６０とリフレクタ４０とは互いの光軸が一致し且つ各光軸がＬＥＤチップ１０を通るように配置されており、レンズ６０は、光出射面６０ｂが、光入射面６０ａから入射した光を光出射面６０ｂと上述の空気層８０との境界で全反射させない凸曲面状に形成されている。ここで、レンズ６０は、光出射面６０ｂが球面の一部により形成されており、当該球面の中心がＬＥＤチップ１０の厚み方向に沿った発光部１２の中心線上に位置するように配置されている。したがって、ＬＥＤチップ１０から放射された光（ＬＥＤチップ１０から放射されリフレクタ４０に反射されることなくレンズ６０の光入射面６０ａに入射された光およびＬＥＤチップ１０から放射されリフレクタ４０の内側面４０ａで反射されてレンズ６０の光入射面６０ａに入射した光）が光出射面６０ｂと空気層８０との境界で全反射されることなく色変換部材７０まで到達しやすくなり、全光束を高めることができる。   Incidentally, the lens 60 and the reflector 40 are arranged so that their optical axes coincide with each other and each optical axis passes through the LED chip 10, and the lens 60 has a light emitting surface 60b incident from the light incident surface 60a. It is formed in a convex curved surface shape that does not totally reflect light at the boundary between the light emitting surface 60b and the air layer 80 described above. Here, the lens 60 is formed such that the light emitting surface 60 b is formed by a part of a spherical surface, and the center of the spherical surface is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. Yes. Therefore, the light emitted from the LED chip 10 (the light emitted from the LED chip 10 and incident on the light incident surface 60a of the lens 60 without being reflected by the reflector 40, and the inner surface 40a of the reflector 40 emitted from the LED chip 10). The light that has been reflected by the light and incident on the light incident surface 60a of the lens 60 is not easily totally reflected at the boundary between the light emitting surface 60b and the air layer 80, and can easily reach the color conversion member 70, thereby increasing the total luminous flux. Can do.

色変換部材７０は、シリコーン樹脂のような透明材料とＬＥＤチップ１０から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置は、ＬＥＤチップ１０から放射された青色光と黄色蛍光体から放射された光とが色変換部材７０の外面７０ｂを通して放射されることとなり、白色光を得ることができる。なお、色変換部材７０の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、色変換部材７０の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded article in which a transparent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10 are mixed. It is comprised by. Therefore, in the light emitting device of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light can be obtained. it can. Note that the transparent material used as the material of the color conversion member 70 is not limited to the silicone resin, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材７０は、内面７０ａがレンズ６０の光出射面６０ｂに沿った形状（つまり、レンズ６０の光出射面６０ｂに対応した上記球面よりも直径が大きな球面の一部からなる形状）に形成されている。したがって、レンズ６０の光出射面６０ｂの位置によらず法線方向における光出射面６０ｂと色変換部材７０の内面７０ａとの間の距離が略一定値となっている。なお、色変換部材７０は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材７０は、開口部の周縁をリフレクタ４０に対して、例えば接着剤（例えば、シリコーン樹脂、エポキシ樹脂など）を用いて接着すればよい。   Here, the color conversion member 70 has a shape in which the inner surface 70a is formed along the light emitting surface 60b of the lens 60 (that is, a part of a spherical surface having a diameter larger than that of the spherical surface corresponding to the light emitting surface 60b of the lens 60). ). Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be bonded to the reflector 40 at the periphery of the opening using, for example, an adhesive (for example, silicone resin, epoxy resin).

以上説明した本実施形態の発光装置では、封止部５０側の光入射面６０ａが平面状に形成されるとともに光出射面６０ｂが凸曲面状に形成され封止部５０に重ねて配置されたレンズ６０と、ＬＥＤチップ１０から放射された光によって励起されてＬＥＤチップ１０の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズ６０の光出射面６０ｂ側にレンズ６０を覆い光出射面６０ｂとの間に空気層８０が形成される形で配設されるドーム状の色変換部材７０とを備えていることにより、色むらを低減でき、しかも、色変換部材７０はレンズ６０の光出射面６０ｂとの間に空気層８０が形成される形で配設すればよく、色変換部材７０をレンズ６０に密着させる必要がないので、色変換部材７０の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できる。なお、本実施形態の発光装置では、組立時に色変換部材７０の組付けが最終工程となるので、ＬＥＤチップ１０の発光波長に応じて透明材料に対する蛍光体の配合を調整した色変換部材７０を用いることで色ばらつきを低減することもできる。   In the light emitting device according to the present embodiment described above, the light incident surface 60a on the sealing portion 50 side is formed in a flat shape, and the light emitting surface 60b is formed in a convex curved surface and is disposed so as to overlap the sealing portion 50. A lens 60 and a molded product obtained by molding together with a transparent material a phosphor that is excited by the light emitted from the LED chip 10 and emits light of a color different from the emission color of the LED chip 10, and the light emitting surface of the lens 60 Color unevenness can be reduced by providing a dome-shaped color conversion member 70 that covers the lens 60 on the 60b side and is disposed in such a manner that an air layer 80 is formed between the lens 60 and the light emitting surface 60b. The color conversion member 70 may be disposed in a form in which an air layer 80 is formed between the light emitting surface 60b of the lens 60 and the color conversion member 70 does not need to be in close contact with the lens 60. Dimensional accuracy of 70 Reduction in yield due to the positioning accuracy can be suppressed. In the light emitting device of this embodiment, since the assembly of the color conversion member 70 is the final process at the time of assembly, the color conversion member 70 in which the blending of the phosphor with respect to the transparent material is adjusted according to the light emission wavelength of the LED chip 10. By using it, color variation can be reduced.

また、本実施形態の発光装置では、上述のように色変換部材７０とレンズ６０との間に空気層８０が形成されているので、色変換部材７０に外力が作用したときに色変換部材７０が変形してレンズ６０に当接する可能性が低くなって上記外力により色変換部材７０に発生した応力がレンズ６０および封止部５０を通してＬＥＤチップ１０に伝達されるのを抑制でき、上記外力によるＬＥＤチップ１０の発光特性の変動が起こりにくくなるから、信頼性が向上するという利点がある。また、色変換部材７０とレンズ６０との間に上記空気層８０が形成されていることにより、外部雰囲気中の水分がＬＥＤチップ１０に到達しにくくなるという利点がある。   In the light emitting device of this embodiment, since the air layer 80 is formed between the color conversion member 70 and the lens 60 as described above, the color conversion member 70 is applied when an external force is applied to the color conversion member 70. Is less likely to come into contact with the lens 60 and the stress generated in the color conversion member 70 due to the external force can be suppressed from being transmitted to the LED chip 10 through the lens 60 and the sealing portion 50. Since the light emission characteristics of the LED chip 10 hardly change, there is an advantage that the reliability is improved. In addition, since the air layer 80 is formed between the color conversion member 70 and the lens 60, there is an advantage that moisture in the external atmosphere hardly reaches the LED chip 10.

また、色変換部材７０とレンズ６０との間に上記空気層８０が形成されていることにより、ＬＥＤチップ１０から放射され封止部５０およびレンズ６０を通して色変換部材７０に入射し当該色変換部材７０中の黄色蛍光体の粒子により散乱された光のうちレンズ６０側へ散乱されてレンズ６０を透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点がある。   In addition, since the air layer 80 is formed between the color conversion member 70 and the lens 60, the color conversion member 70 is emitted from the LED chip 10 and enters the color conversion member 70 through the sealing portion 50 and the lens 60. Among the light scattered by the yellow phosphor particles in 70, there is an advantage that the amount of light scattered to the lens 60 side and transmitted through the lens 60 can be reduced, and the light extraction efficiency to the outside as the entire apparatus can be improved. is there.

ここで、図２（ａ），（ｂ）に示すように、色変換部材７０の光軸とＬＥＤチップ１０の光軸とが一致しており、色変換部材７０における光軸方向の中央の位置ＰでＬＥＤチップ１０からの青色光が全方位に散乱されたとし、色変換部材７０と空気層８０との界面での全反射角をφａ、色変換部材７０と当該色変換部材７０の外側の媒質である空気との界面での全反射角をφｂ、位置Ｐで散乱された光に関して色変換部材７０の内面７０ａ側のエスケープコーンＥＣａの広がり角を２θａ、位置Ｐで散乱された光に関して色変換部材７０の外面７０ｂ側のエスケープコーンＥＣｂの広がり角を２θｂとすれば、図２（ａ）に示すように全反射角φａ，φｂが４０°のときには２θａ＝６０°、２θｂ＝９８°となり、図２（ｂ）に示すように全反射角φａ，φｂが５０°のときには２θａ＝７６°、２θｂ＝１３４°となる。   Here, as shown in FIGS. 2A and 2B, the optical axis of the color conversion member 70 and the optical axis of the LED chip 10 coincide with each other, and the central position of the color conversion member 70 in the optical axis direction. It is assumed that the blue light from the LED chip 10 is scattered in all directions by P, the total reflection angle at the interface between the color conversion member 70 and the air layer 80 is φa, and the color conversion member 70 and the outside of the color conversion member 70 are outside. The total reflection angle at the interface with air, which is the medium, is φb, and the light scattered at the position P is 2θa, the spread angle of the escape cone ECa on the inner surface 70a side of the color conversion member 70, and the color is scattered with respect to the light scattered at the position P. If the spread angle of the escape cone ECb on the outer surface 70b side of the conversion member 70 is 2θb, as shown in FIG. 2A, when the total reflection angles φa and φb are 40 °, 2θa = 60 ° and 2θb = 98 °. As shown in FIG. 2 (b), the total reflection angle When φa and φb are 50 °, 2θa = 76 ° and 2θb = 134 °.

ここにおいて、色変換部材７０に用いている透明材料の屈折率をｎ、位置Ｐで散乱され内面７０ａ側のエスケープコーンＥＣａを通して放出される青色光の最大放出効率をηとすれば、η＝（１／４ｎ2）×１００〔％〕で表されるので、上述のように透明材料としてシリコーン樹脂を用いている場合には、ｎ＝１．４として、η≒１３％となる。したがって、色変換部材７０とレンズ６０との間に空気層８０が形成されていない場合には、位置Ｐで散乱された青色光の５０％がレンズ６０に戻ってしまうのに対して、空気層８０を形成したことにより、位置Ｐで散乱された青色光の１３％しかレンズ６０に戻らなくなるので、青色光による封止部５０の劣化を抑制できる。なお、エスケープコーンＥＣａを通して放出される青色光を少なくするには、色変換部材７０の厚みを大きくすることが望ましい。 Here, if the refractive index of the transparent material used for the color conversion member 70 is n and the maximum emission efficiency of blue light scattered at the position P and emitted through the escape cone ECa on the inner surface 70a is η, η = ( ¼n 2 ) × 100 [%], so that when silicone resin is used as the transparent material as described above, η≈13% when n = 1.4. Therefore, when the air layer 80 is not formed between the color conversion member 70 and the lens 60, 50% of the blue light scattered at the position P returns to the lens 60, whereas the air layer Since 80 is formed, only 13% of the blue light scattered at the position P returns to the lens 60, so that deterioration of the sealing portion 50 due to the blue light can be suppressed. In order to reduce the blue light emitted through the escape cone ECa, it is desirable to increase the thickness of the color conversion member 70.

ところで、上述の実施形態では、実装基板２０に１つのＬＥＤチップ１０を実装してあるが、実装基板２０に実装するＬＥＤチップ１０の数は１つに限らず、複数でもよく、ＬＥＤチップ１０ごとにリフレクタ４０、封止部５０、レンズ６０および色変換部材７０を設ければよい。また、本実施形態では、実装基板２０がベース部材を構成しているが、ベース部材は、実装基板２０に限らず、例えば、パッケージ本体が熱伝導率の比較的高い材料により形成されたパッケージでもよいし、金属（例えば、Ａｌ、Ｃｕなどの熱伝導率の高い金属）製の器具本体などでもよく、金属製の器具本体に実装する場合には、例えばサブマウント部材３０と器具本体との間にグリーンシートなどからなる絶縁層を介在させる形で実装すればよい。   By the way, in the above-mentioned embodiment, although one LED chip 10 is mounted on the mounting substrate 20, the number of LED chips 10 mounted on the mounting substrate 20 is not limited to one, and a plurality of LED chips 10 may be provided. The reflector 40, the sealing part 50, the lens 60, and the color conversion member 70 may be provided. In the present embodiment, the mounting substrate 20 constitutes the base member. However, the base member is not limited to the mounting substrate 20, and for example, a package whose package body is formed of a material having a relatively high thermal conductivity. Alternatively, it may be an instrument body made of metal (for example, a metal having high thermal conductivity such as Al or Cu). When mounted on a metal instrument body, for example, between the submount member 30 and the instrument body. It suffices to mount an insulating layer made of a green sheet or the like.

また、上述の実施形態では、ＬＥＤチップ１０として、発光色が青色の青色ＬＥＤチップを採用しており、導電性基板１１としてＳｉＣ基板を採用しているが、ＳｉＣ基板の代わりにＧａＮ基板を用いてもよく、ＳｉＣ基板やＧａＮ基板を用いた場合には上記特許文献１のように結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、ＬＥＤチップ１０の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、ＬＥＤチップ１０の発光部１２の材料はＧａＮ系化合物半導体材料に限らず、ＬＥＤチップ１０の発光色に応じて、ＧａＡｓ系化合物半導体材料やＧａＰ系化合物半導体材料などを採用してもよい。また、導電性基板１１もＳｉＣ基板に限らず、発光部１２の材料に応じて、例えば、ＧａＡｓ基板、ＧｓＰ基板などから適宜選択すればよい。   Further, in the above-described embodiment, a blue LED chip whose emission color is blue is adopted as the LED chip 10 and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate is used instead of the SiC substrate. In the case of using a SiC substrate or a GaN substrate, the thermal conductivity of the crystal growth substrate as compared with the case of using a sapphire substrate which is an insulator as the crystal growth substrate as described in Patent Document 1 above. And the thermal resistance of the substrate for crystal growth can be reduced. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.

実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment. 同上の要部説明図である。It is principal part explanatory drawing same as the above. 従来例を示す概略断面図である。It is a schematic sectional drawing which shows a prior art example.

符号の説明Explanation of symbols

１０ ＬＥＤチップ
１１ 導電性基板
１２ 発光部
１４ ボンディングワイヤ
２０ 実装基板
２１ 金属板
２２ 絶縁層
２３ 導体パターン
３０ サブマウント部材
４０ リフレクタ
５０ 封止部
６０ レンズ
６０ａ 光入射面
６０ｂ 光出射面
７０ 色変換部材
７０ａ 内面
７０ｂ 外面
８０ 空気層 DESCRIPTION OF SYMBOLS 10 LED chip 11 Conductive substrate 12 Light emission part 14 Bonding wire 20 Mounting board 21 Metal plate 22 Insulating layer 23 Conductive pattern 30 Submount member 40 Reflector 50 Sealing part 60 Lens 60a Light incident surface 60b Light-emitting surface 70 Color conversion member 70a Inner surface 70b Outer surface 80 Air layer

Claims (2)

ＬＥＤチップと、ＬＥＤチップが実装されたベース部材と、ＬＥＤチップを封止した封止樹脂からなる封止部と、光出射面が凸曲面状に形成され封止部に重ねて配置されたレンズと、ＬＥＤチップから放射された光によって励起されてＬＥＤチップの発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズの前記光出射面側にレンズを覆い前記光出射面との間に空気層が形成される形で配設されるドーム状の色変換部材とを備え、レンズは、前記光出射面が封止部側の光入射面から入射した光を前記光出射面と空気層との境界で全反射させない凸曲面状であり球面の一部により形成されており、当該球面の中心がＬＥＤチップの厚み方向に沿った発光部の中心線上に位置するように配置されてなり、色変換部材は、内面が前記光出射面に沿った形状であり前記光出射面に対応した前記球面よりも直径が大きな球面の一部からなる形状に形成されており、レンズの光出射面の位置によらず法線方向におけるレンズの前記光出射面と色変換部材の内面との間の距離が略一定値となっていることを特徴とする発光装置。 An LED chip, a base member on which the LED chip is mounted, a sealing portion made of a sealing resin that seals the LED chip, and a lens in which the light emission surface is formed in a convex curved surface and is placed on the sealing portion. And a molded product in which a phosphor that is excited by the light emitted from the LED chip and emits light of a color different from the emission color of the LED chip is molded together with a transparent material, and the lens is disposed on the light emitting surface side of the lens. And a dome-shaped color conversion member disposed in a form in which an air layer is formed between the light emitting surface and the lens, and the lens has the light emitting surface incident from a light incident surface on the sealing portion side It is a convex curved surface that does not totally reflect light at the boundary between the light emitting surface and the air layer, and is formed by a part of a spherical surface, and the center of the spherical surface is on the center line of the light emitting unit along the thickness direction of the LED chip. Color change Member, the inner surface is formed into a shape having a diameter of a part of the large spherical than the spherical surface corresponding to the shape and is the light exit surface along the light exit surface, the position of the light emitting surface of the lens the light emitting device a distance between the light emitting surface and the inner surface of the color conversion member lenses in the normal direction, characterized in that has a substantially constant value regardless. 前記ＬＥＤチップの発光色が青色であり、前記色変換部材の前記蛍光体として黄色蛍光体もしくは赤色蛍光体と緑色蛍光体とを用いてなることを特徴とする請求項１記載の発光装置。   2. The light emitting device according to claim 1, wherein a light emission color of the LED chip is blue, and a yellow phosphor or a red phosphor and a green phosphor are used as the phosphor of the color conversion member.
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